KR102546317B1 - 기체 공급 유닛 및 이를 포함하는 기판 처리 장치 - Google Patents
기체 공급 유닛 및 이를 포함하는 기판 처리 장치 Download PDFInfo
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Abstract
박막 처리 균일성이 개선된 기판 처리 장치가 제공된다. 기판 처리 장치는, 기체 공급 채널을 제공하는 격벽, 기체 공급 채널에 연결된 기체 공급 유닛을 포함하고, 기체 공급 유닛 내부에 기체 공급 채널과 연통하는 기체 흐름 채널이 형성되며, 제1 관통 홀이 격벽의 적어도 일부를 관통하도록 형성되고, 제2 관통 홀이 기체 공급 유닛의 적어도 일부를 관통하도록 형성되어, 제1 관통 홀이 제2 관통 홀을 통해 기체 흐름 채널과 연통하고, 제2 관통 홀은 기체 흐름 채널의 중심과 가장자리 사이에 배치되고, 가장자리로부터 이격되어 배치된다.
Description
본 발명은 기체 공급 유닛 및 이를 포함하는 기판 처리 장치에 관한 것으로, 보다 구체적으로는 기판의 특정 부분의 박막 증착을 제어할 수 있는 기체 공급 유닛 및 이를 포함하는 증착 장치에 관한 것이다.
반도체 소자의 제작을 위한 공정에 있어서, 회로 선폭이 감소함에 따라 보다 정밀한 공정 제어가 요구되고 있다. 반도체 주요 공정 중 하나인 박막 증착 공정(film deposition process)에 있어서도 보다 높은 박막의 균일도(uniformity)를 이루기 위한 다양한 시도가 진행되어 왔다.
균일한 박막 증착을 위한 중요한 요소 중의 하나는 기체 공급 유닛(gas supplying unit)이다. 통상적으로 사용된 기체 공급 유닛으로서 샤워헤드 방식이 있다. 샤워헤드는 기체를 기판상에 동심원 형태로 균일하게 공급할 수 있다는 장점이 있다. 그러나 기판에 공급된 기체가 배기될 때 기판 가장자리 부분의 박막 두께와 기판 중심 부분의 박막 두께가 균일하지 않은 문제가 발생할 수 있다.
본 발명은, 위 언급된 문제를 해결하기 위해, 기판의 가장자리 부분의 박막 증착을 제어할 수 있는 기체 공급 유닛 및 이를 포함하는 기판 처리 장치를 제공하고자 한다.
또한 본 발명은 반도체 기판 내지 디스플레이 기판과 같은 피처리 기판의 적층 구조물 상에 층을 형성하는 경우에 있어서, 적층 구조물의 비표면적을 고려하여 보다 균일한 두께의 층이 형성될 수 있도록 하는 기체 공급 유닛 및 이를 포함하는 기판 처리 장치를 제공하고자 한다.
본 발명의 기술적 사상에 따른 실시예들의 일 측면에 따르면, 기판 처리 장치는 기체 공급 채널을 제공하는 격벽; 및 상기 기체 공급 채널에 연결된 기체 공급 유닛을 포함하고, 상기 기체 공급 유닛 내부에 상기 기체 공급 채널과 연통하는 기체 흐름 채널이 형성되며, 제1 관통 홀이 상기 격벽의 적어도 일부를 관통하도록 형성되고, 제2 관통 홀이 상기 기체 공급 유닛의 적어도 일부를 관통하도록 형성되어, 상기 제1 관통 홀이 상기 제2 관통 홀을 통해 상기 기체 흐름 채널과 연통하고, 상기 제2 관통 홀은 상기 기체 흐름 채널의 중심과 가장자리 사이에 배치되고, 상기 가장자리로부터 이격되어 배치될 수 있다.
상기 기판 처리 장치의 일 예에 따르면, 상기 격벽의 적어도 일부를 관통하여 상기 기체 공급 유닛과 연결된 RF 로드(RF rod)를 더 포함할 수 있다.
상기 기판 처리 장치의 다른 예에 따르면, 상기 기체 공급 유닛은 기체 채널 및 기체 공급 플레이트를 포함하고, 상기 기체 흐름 채널은 상기 기체 채널과 상기 기체 공급 플레이트 사이에 형성될 수 있다.
상기 기판 처리 장치의 다른 예에 따르면, 상기 기체 흐름 채널의 폭은 중심에서 주변을 향하여 점차 좁아질 수 있다.
상기 기판 처리 장치의 다른 예에 따르면, 상기 제2 관통 홀은 피처리 기판의 적층 구조물을 향하도록 배치될 수 있다.
상기 기판 처리 장치의 다른 예에 따르면, 상기 제2 관통 홀은 상기 기체 공급 플레이트에 대하여 수직 방향으로 또는 경사진 방향으로 관통할 수 있다.
상기 기판 처리 장치의 다른 예에 따르면, 상기 제1 관통 홀과 상기 제2 관통 홀 사이에 버퍼 공간이 형성되고, 상기 버퍼 공간의 폭은 상기 제1 관통 홀의 폭보다 크고 상기 제2 관통 홀의 폭보다 클 수 있다.
상기 기판 처리 장치의 다른 예에 따르면, 상기 버퍼 공간은 상기 기체 공급 채널의 중심으로부터 일정 간격 이격된 원주를 따라 연속으로 형성될 수 있다.
상기 기판 처리 장치의 다른 예에 따르면, 상기 기판 처리 장치는 상기 격벽의 하부 면과 접촉하도록 구성된 서셉터를 더 포함할 수 있다.
상기 기판 처리 장치의 다른 예에 따르면, 상기 기판 처리 장치는 상기 기체 공급 채널과 공급된 제1 기체 공급부; 상기 제1 관통 홀과 연결된 제2 기체 공급부; 및 상기 제1 기체 공급부 및 상기 제2 기체 공급부를 제어하도록 구성된 제어부를 더 포함할 수 있다.
상기 기판 처리 장치의 다른 예에 따르면, 상기 제어부는 상기 제1 기체 공급부 및 상기 제2 기체 공급부를 독립적으로 제어하도록 더 구성될 수 있다.
본 발명의 기술적 사상에 따른 실시예들의 다른 측면에 따르면, 기판 처리 장치는, 반응기 벽; 상기 반응기 벽의 내부 공간을 상부 공간과 하부 공간으로 분리하는 제1 격벽; 상기 상부 공간의 중심으로부터 일정 간격 이격되어 배치된 제2 격벽; 상기 반응기 벽과 상기 제2 격벽 사이에 배치된 제3 격벽; 상기 상부 공간으로부터 상기 하부 공간으로 연장되는 기체 공급 채널; 상기 기체 공급 채널과 연결된 기체 공급 유닛; 상기 제3 격벽을 관통하는 제1 관통 홀; 상기 제1 관통 홀과 연통하며, 상기 기체 공급 유닛의 적어도 일부를 관통하는 제2 관통 홀; 상기 제2 관통 홀은 상기 공급 유닛의 중심과 가장자리 사이에 배치되고, 상기 가장자리로부터 이격되어 배치될 수 있다.
상기 기판 처리 장치의 일 예에 따르면, 상기 기판 처리 장치는 상기 하부 공간에 배치된 기체 공급 플레이트; 및 상기 기체 공급 플레이트 상에 적층되며 상기 기체 공급 플레이트와 기계적으로 결합된 기체 채널을 더 포함하고, 상기 기체 채널과 상기 기체 공급 플레이트 사이에 기체 흐름 채널이 형성될 수 있다.
상기 기판 처리 장치의 다른 예에 따르면, 상기 기판 처리 장치는 적어도 하나의 RF 로드를 더 포함하며, 상기 RF 로드는 상기 기체 채널과 전기적으로 연결될 수 있다.
상기 기판 처리 장치의 다른 예에 따르면, 상기 RF 로드는 상기 제1 격벽 중 상기 제2 격벽과 상기 제3 격벽 사이에 배치된 부분을 관통하도록 형성될 수 있다.
상기 기판 처리 장치의 다른 예에 따르면, 상기 기판 처리 장치는 상기 반응기 벽과 상기 제3 격벽 사이에 형성된 배기 통로; 및 상기 제1 격벽에 형성되며 상기 하부 공간과 상기 배기 통로를 연결하는 제3 관통 홀을 더 포함할 수 있다.
본 발명의 기술적 사상에 따른 실시예들의 또 다른 측면에 따르면, 기체 공급 유닛은, 중심 주입구를 제공하는 기체 채널; 및 상기 기체 채널 하부에 배치된 기체 공급 플레이트를 포함하고, 상기 기체 채널과 상기 기체 공급 플레이트 사이에 상기 중심 주입구와 연통하는 기체 흐름 채널이 형성되며, 상기 기체 채널은 상기 기체 흐름 채널의 중심과 가장자리 사이의 영역을 관통하는 관통 홀을 포함하고, 상기 관통 홀은 상기 가장자리로부터 이격되어 배치될 수 있다.
상기 기체 공급 유닛 및 이를 포함하는 기판 처리 장치의 일 예에 따르면, 상기 관통 홀의 위치는 피처리 기판의 비표면적을 고려하여 결정될 수 있다.
상기 기체 공급 유닛 및 이를 포함하는 기판 처리 장치의 다른 예에 따르면, 상기 관통 홀은 상기 중심 주입구의 중심으로부터 일정 간격 이격된 원주를 따라 복수 개 배치되거나 연속적으로 형성될 수 있다.
상기 기체 공급 유닛 및 이를 포함하는 기판 처리 장치의 다른 예에 따르면, 상기 관통 홀은 상기 기체 채널의 제1 면 상에서 제1 지름을 갖는 제1 원주를 따라 배치 또는 형성되고, 상기 관통 홀은 상기 기체 채널의 제2 면 상에서 제2 지름을 갖는 제2 원주를 따라 배치 또는 형성되며, 상기 제1 지름과 상기 제2 지름은 다를 수 있다.
도 1은 본 발명의 기술적 사상에 의한 실시예들에 따른 기체 공급 유닛 및 이를 포함하는 기판 처리 장치를 개략적으로 나타낸다.
도 2는 본 발명의 기술적 사상에 의한 다른 실시예들에 따른 기체 공급 유닛 및 이를 포함하는 기판 처리 장치를 개략적으로 나타낸다.
도 3 내지 도 6은 본 발명의 기술적 사상에 의한 다른 실시예들에 따른 기체 공급 유닛을 나타내는 단면도들이다.
도 7은 본 발명의 기술적 사상에 의한 다른 실시예들에 따른 기체 공급 유닛 및 이를 포함하는 기판 처리 장치를 개략적으로 나타낸다.
도 8 내지 도 11은 본 발명의 기술적 사상에 의한 다른 실시예들에 따른 기판 처리 장치를 이용한 박막 제조 방법을 개략적으로 나타낸다.
도 12 및 도 13은 본 발명의 기술적 사상에 의한 다른 실시예들에 따른 기판 처리 장치를 개략적으로 나타낸다.
도 14는 전술한 기판 처리 장치의 배기부 부분을 확대한 그림이다.
도 15 내지 도 17은 본 발명의 기술적 사상에 의한 또 다른 실시예들에 따른 반응기 및 이를 포함하는 기판 처리 장치를 개략적으로 나타낸다.
도 18 및 도 19는 본 발명의 기술적 사상에 의한 실시예들에 따른 반응기 구조를 개략적으로 나타낸다.
도 20 및 도 21은 본 발명의 기술적 사상에 의한 실시예들에 따른 백플레이트 구조를 개략적으로 나타낸다.
도 22 내지 도 24는 본 발명의 실시예들에 따른 기체 공급 유닛에 포함된 기체 채널의 사시도, 상면도 및 배면도를 각각 나타낸다.
도 25 및 도 26은 백플레이트와 기체채널을 관통하는 제4 관통홀 및 제5 관통홀의 다양한 실시예들를 나타낸다.
도 27 및 도 28은 본 발명에 따른 반응기에서 PEALD 방법으로 기판에 증착된 SiO2 박막의 두께를 나타낸다.
도 2는 본 발명의 기술적 사상에 의한 다른 실시예들에 따른 기체 공급 유닛 및 이를 포함하는 기판 처리 장치를 개략적으로 나타낸다.
도 3 내지 도 6은 본 발명의 기술적 사상에 의한 다른 실시예들에 따른 기체 공급 유닛을 나타내는 단면도들이다.
도 7은 본 발명의 기술적 사상에 의한 다른 실시예들에 따른 기체 공급 유닛 및 이를 포함하는 기판 처리 장치를 개략적으로 나타낸다.
도 8 내지 도 11은 본 발명의 기술적 사상에 의한 다른 실시예들에 따른 기판 처리 장치를 이용한 박막 제조 방법을 개략적으로 나타낸다.
도 12 및 도 13은 본 발명의 기술적 사상에 의한 다른 실시예들에 따른 기판 처리 장치를 개략적으로 나타낸다.
도 14는 전술한 기판 처리 장치의 배기부 부분을 확대한 그림이다.
도 15 내지 도 17은 본 발명의 기술적 사상에 의한 또 다른 실시예들에 따른 반응기 및 이를 포함하는 기판 처리 장치를 개략적으로 나타낸다.
도 18 및 도 19는 본 발명의 기술적 사상에 의한 실시예들에 따른 반응기 구조를 개략적으로 나타낸다.
도 20 및 도 21은 본 발명의 기술적 사상에 의한 실시예들에 따른 백플레이트 구조를 개략적으로 나타낸다.
도 22 내지 도 24는 본 발명의 실시예들에 따른 기체 공급 유닛에 포함된 기체 채널의 사시도, 상면도 및 배면도를 각각 나타낸다.
도 25 및 도 26은 백플레이트와 기체채널을 관통하는 제4 관통홀 및 제5 관통홀의 다양한 실시예들를 나타낸다.
도 27 및 도 28은 본 발명에 따른 반응기에서 PEALD 방법으로 기판에 증착된 SiO2 박막의 두께를 나타낸다.
이하, 첨부된 도면을 참조하여 본 발명의 바람직한 실시예를 상세히 설명하기로 한다.
본 발명의 실시예들은 당해 기술 분야에서 통상의 지식을 가진 자에게 본 발명을 더욱 완전하게 설명하기 위하여 제공되는 것이며, 아래의 실시예들은 여러 가지 다른 형태로 변형될 수 있으며, 본 발명의 범위가 아래의 실시예들로 한정되는 것은 아니다. 오히려, 이들 실시예는 본 개시를 더욱 충실하고 완전하게 하며 당업자에게 본 발명의 사상을 완전하게 전달하기 위하여 제공되는 것이다.
본 명세서에서 사용된 용어는 특정 실시예를 설명하기 위하여 사용되며, 본 발명을 제한하기 위한 것이 아니다. 본 명세서에서 사용된 바와 같이 단수 형태는 문맥상 다른 경우를 분명히 지적하는 것이 아니라면, 복수의 형태를 포함할 수 있다. 또한, 본 명세서에서 사용되는 경우 "포함한다(comprise)" 및/또는 "포함하는(comprising)"은 언급한 형상들, 숫자, 단계, 동작, 부재, 요소 및/또는 이들 그룹의 존재를 특정하는 것이며, 하나 이상의 다른 형상, 숫자, 동작, 부재, 요소 및/또는 그룹들의 존재 또는 부가를 배제하는 것이 아니다. 본 명세서에서 사용된 바와 같이, 용어 "및/또는"은 해당 열거된 항목 중 어느 하나 및 하나 이상의 모든 조합을 포함한다.
본 명세서에서 제1, 제2 등의 용어가 다양한 부재, 영역 및/또는 부위들을 설명하기 위하여 사용되지만, 이들 부재, 부품, 영역, 층들 및/또는 부위들은 이들 용어에 의해 한정되어서는 안됨은 자명하다. 이들 용어는 특정 순서나 상하, 또는 우열의 의미하지 않으며, 하나의 부재, 영역 또는 부위를 다른 부재, 영역 또는 부위와 구별하기 위하여만 사용된다. 따라서, 이하 상술할 제1 부재, 영역 또는 부위는 본 발명의 가르침으로부터 벗어나지 않고서도 제2 부재, 영역 또는 부위를 지칭할 수 있다.
이하, 본 발명의 실시예들은 본 발명의 이상적인 실시예들을 개략적으로 도시하는 도면들을 참조하여 설명한다. 도면들에 있어서, 예를 들면, 제조 기술 및/또는 공차에 따라, 도시된 형상의 변형들이 예상될 수 있다. 따라서, 본 발명의 실시예는 본 명세서에 도시된 영역의 특정 형상에 제한된 것으로 해석되어서는 아니 되며, 예를 들면 제조상 초래되는 형상의 변화를 포함하여야 한다.
도 1은 본 발명의 기술적 사상에 의한 실시예들에 따른 기체 공급 유닛 및 이를 포함하는 기판 처리 장치를 개략적으로 나타낸다.
도 1을 참조하면, 기판 처리 장치는 격벽(110), 기체 공급 유닛(120), RF 로드(130), 및 배기 통로(140)를 포함할 수 있다. 본 명세서에서 설명된 기판 처리 장치의 예로서 반도체 또는 디스플레이 기판의 증착 장치를 들 수 있으나, 본 발명은 이에 제한되지 않음에 유의한다. 기판 처리 장치는 박막 형성을 위한 물질의 퇴적을 수행하는데 필요한 여하의 장치일 수도 있고, 물질의 식각 내지 연마를 위한 원료가 균일하게 공급되는 장치를 지칭할 수도 있다. 이하에서는 편의상 기판 처리 장치가 반도체 증착 장치임을 전제로 설명하기로 한다.
격벽(110)은 반응기의 구성요소일 수 있다. 다시 말해, 격벽(110) 구조에 의해 기판의 처리(예를 들어, 증착, 식각, 연마)를 위한 반응 공간이 형성될 수 있다. 예를 들어, 격벽(110)은 반응기 측벽 및/또는 반응기 상벽을 포함할 수 있다. 격벽(110) 중 반응기 상벽 부분은 기체 공급 채널(150)을 제공할 수 있고, 상기 기체 공급 채널(150)을 통해 소스 가스, 퍼지 가스, 및/또는 반응 가스가 공급될 수 있다.
기체 공급 유닛(120)은 기체 공급 채널(150)에 연결될 수 있다. 기체 공급 유닛(120)은 반응기에 고정될 수 있다. 예를 들어, 기체 공급 유닛(120)은 고정 부재(미도시)를 통해 격벽(110)에 고정될 수 있다. 기체 공급 유닛(120)은 반응 공간(160) 내의 피처리체에 기체를 공급하도록 구성될 수 있다. 예를 들어, 기체 공급 유닛(120)은 샤워헤드 어셈블리일 수 있다.
기체 공급 유닛(120) 내부에는 기체 공급 채널(150)과 연통하는 기체 흐름 채널(170)이 형성될 수 있다. 기체 흐름 채널(170)은 기체 공급 유닛(120)의 기체 채널(125)(윗부분)과 기체 공급 유닛(120)의 기체 공급 플레이트(127)(아랫 부분) 사이에 형성될 수 있다. 비록 도면에는 기체 채널(125)과 기체 공급 플레이트(127)가 별개의 구조로 도시되었지만, 기체 채널(125)과 기체 공급 플레이트(127)는 일체화된 구조로 형성될 수도 있다.
예시적인 실시예에서, 기체 흐름 채널(170)은 기체 공급 유닛(120)의 중심에서 주변을 향하여 그 폭이 점차 좁아지도록 형성될 수 있다. 기체 채널(125)은 기체 공급 채널(150)과 연결된 중심 주입구를 제공할 수 있다. 중심 주입구는 기체 흐름 채널(170)과 연결될 수 있고, 따라서 기체 흐름 채널(170)은 중심 주입구를 통해 기체 공급 채널(150)과 연결될 수 있다.
전술한 바와 같이, 격벽(110)에는 기체 공급 채널(150)이 형성될 수 있다. 상기 기체 공급 채널(150)에 추가로, 제1 관통 홀(180)이 격벽(110)의 적어도 일부를 관통하도록 형성될 수 있다. 예를 들어, 제1 관통 홀(180)은 격벽(110) 중 반응기 상벽을 관통하도록 형성될 수 있다. 바람직한 실시예에서, 제1 관통 홀(180)의 직경은 기체 공급 채널(150)의 직경보다 작을 수 있다.
제2 관통 홀(185)은 기체 공급 유닛(120)의 적어도 일부를 관통하도록 형성될 수 있다. 예를 들어, 제2 관통 홀(185)은 기체 채널(125)을 관통하여 기체 흐름 채널(170)과 연결되도록 형성될 수 있다. 따라서, 제1 관통 홀(180)이 제2 관통 홀(185)을 통해 상기 기체 흐름 채널(170)과 연통할 수 있다.
제2 관통 홀(185)은 기체 흐름 채널(170)의 중심과 가장자리 사이에 배치될 수 있다. 특히, 제2 관통 홀(185)은 기체 흐름 채널(170)의 가장자리로부터 이격되어 배치될 수 있다. 이러한 제2 관통 홀(185)의 위치 구조를 통하여, 기판의 특정 부분(즉, 제2 관통 홀(185)이 배치된 부분과 상응하는 부분)의 박막 증착이 제어될 수 있다.
예를 들어, 제2 관통 홀(185)을 통해 공급된 기체는 기판의 중심과 가장자리 사이의 부분에 증착되는 박막의 균일도에 영향을 미칠 수 있다. 상기 기체가 퍼지 가스인 경우, 기판의 중심과 가장자리 사이의 부분에 증착되는 박막의 두께는 감소할 수 있다. 상기 기체가 반응 가스인 경우, 기판의 중심과 가장자리 사이의 부분에 증착되는 박막의 두께는 증가할 수 있다.
이와 같이, 본 발명은 기판에 기체를 균일하게 공급하는 기체 공급 유닛(120)을 개시하고 있으며, 특히 기판의 중심과 가장자리 사이의 부분에 증착되는 박막의 균일도를 향상시키는 수단을 제공한다.
샤워헤드 구조는 일반적으로 중심 부분을 통해 반응 기체가 공급되고 가장자리를 통해 배기되는 구조를 채용하는데, 그러한 구조로 인해 기판 가장자리 부분의 박막 두께와 기판 중심 부분의 박막 두께가 균일하지 않게 되는 문제가 발생할 수 있다. 그러나 본 발명에 따르면 별도의 기체 공급 통로를 추가하여, 이를 통해 반응 공간(160)의 중심 부분과 가장자리 사이에 공급되는 기체의 유량이 제어될 수 있다. 이렇게 제어된 유량의 기체는 반응 공간(160)의 주변부에 촉진 효과(promoting effect) 또는 차폐 효과(blocking effect)를 유도할 수 있고, 결과적으로 기판의 주변부에 공급되는 소스기체 및 반응기체가 제어될 수 있다. 따라서 기판의 중심과 가장자리 사이의 특정 부분에 공급되는 박막의 균일도를 제어할 수 있고, 원하는 형태와 원하는 균일도를 갖는 박막이 증착될 수 있다.
또한, 본원 발명에 따르면, 피처리체인 반도체 기판의 적층 구조물 상에 보다 균일한 박막을 증착하는 것이 가능하다. 반도체 기판은 여러 증착/식각 공정들을 거쳐 제1 영역에는 적층 패턴이 형성되고 제2 영역에는 그러한 패턴이 형성되지 않은 상태일 수 있는데, 이 경우 상기 제1 영역의 비표면적은 상기 제2 영역의 비표면적보다 크다. 따라서 상기 반도체 기판 상에 균일한 막을 증착하기 위해서는 상기 제2 영역보다 상기 제1 영역에 더 많은 소스 기체 및/또는 반응 기체가 공급되어야 한다. 본원 발명은 이러한 경우에 제2 관통 홀(185)을 상기 제1 영역에 배치하고(즉, 피처리 기판의 적층 구조물을 향하도록 배치하고) 상기 제1 영역에 소스 기체 및/또는 반응 기체가 추가 공급되도록 할 수 있다. 이를 통해, 제1 영역 및 제2 영역에 증착된 박막의 균일성이 달성될 수 있다.
선택적인 실시예에서, 제2 관통 홀(185)을 상기 제2 영역에 배치하고 퍼지 기체가 추가 공급되도록 할 수 있다. 이 경우 평평한 제2 영역에는 적은 양의 소스 기체 및/또는 반응 기체가 공급될 수 있고, 비표면적이 큰 제1 영역에는 상대적으로 많은 양의 소스 기체 및/또는 반응 기체가 공급되어, 제1 영역 및 제2 영역에 증착된 박막의 균일성이 달성될 수도 있다.
제2 관통 홀(185)의 위치는 피처리 기판의 적층 구조물의 위치를 고려하여 결정될 수 있다. 전술한 바와 같이 적층 구조물이 형성된 영역의 비표면적은 적층 구조물이 형성되지 않은 영역의 비표면적보다 크다. 따라서 본 발명에 따른 제2 관통 홀(185)의 위치는, 이러한 비표면적의 차이로 인한 박막 증착의 불균일성을 상쇄시키도록 설계될 수 있다. 다시 말해, 관통 홀의 위치가 피처리 기판의 비표면적을 고려하여 결정되는 것이다.
선택적인 실시예에서, 제2 관통 홀(185)은 중심 주입구의 중심으로부터 일정 간격 이격된 원주를 따라 복수 개 배치될 수 있다. 또 다른 선택적인 실시예에서, 제2 관통 홀(185)은 중심 주입구의 중심으로부터 일정 간격 이격된 원주를 따라 연속적으로 배치될 수도 있다. 이 경우 기체 채널(125)은 상기 제2 관통 홀(185)에 의해 분리된 복수의 부품으로 구성될 수도 있다.
제2 관통 홀(185)은 기체 공급 플레이트(127)에 대하여(또는 기체 흐름 채널(170)에 대하여) 수직 방향으로 또는 경사진 방향으로 관통하도록 형성될 수 있다. 예를 들어, 제2 관통 홀(185)은, 기체 공급 플레이트(127)의 연장 방향(즉, 수평 방향)에 대하여, 기체 공급 플레이트(127)의 중심을 향하여 15~45 도의 각도로 관통하도록 형성될 수 있다. 다시 말해, 기체 채널(125)을 관통하는 제2 관통 홀(185)의 관통 각도를 조절함으로써, 박막(예를 들어, 적층 구조물을 포함하는 기판 상의 특정 부분의 박막)의 균일도가 제어될 수 있다.
예시적인 실시예에서, 제2 관통 홀(185)은 기체 공급 플레이트(127)의 연장 방향(즉, 수평 방향)에 대하여 30 도의 각도로 관통하도록 형성될 수 있다. 이 경우, 제2 관통 홀(185)은 기체 채널(125)의 제1 면(예를 들어, 상부 표면) 상에서 제1 지름을 갖는 제1 원주를 따라 배치 또는 형성될 수 있고, 제2 관통 홀(185)은 상기 기체 채널(125)의 제2 면(예를 들어, 하부 표면) 상에서 제2 지름을 갖는 제2 원주를 따라 배치 또는 형성되며, 상기 제1 지름과 상기 제2 지름은 다를 수 있다.
일 예에서, 제2 관통 홀(185)의 위치, 형상, 개수, 및 각도는 피처리 기판의 적층 구조물의 위치 및 면적에 따라 조절될 수 있다. 전술한 바와 같이, 제2 관통 홀(185)은 피처리 기판의 피표면적이 넓은 적층 구조물을 향하도록 배치될 수 있다. 이 경우 제2 관통 홀(185)의 직경 및/또는 개수는 상기 적층 구조물의 면적에 비례할 수 있다. 또한, 제2 관통 홀(185)의 배열 형태는 적층 구조물의 형상에 따라 결정될 수 있다. 이외에 제2 관통 홀(185)의 각도 내지 유량 또한 적층 구조물의 특성에 따라 설계될 수 있다.
이와 같이, 제2 관통 홀(185)의 개수, 형상, 및 배열 위치와 제2 관통 홀(185)에 공급되는 기체의 종류, 유량 등을 조절함으로써, 박막 균일도가 보다 정밀하게 제어될 수 있고, 원하는 형태와 원하는 균일도를 갖는 박막이 증착될 수 있다.
선택적인 실시예에서, 제1 관통 홀(180)과 제2 관통 홀(185) 사이에 버퍼 공간(190)이 더 형성될 수도 있다. 상기 버퍼 공간(190)은 제1 관통 홀(180)을 통해 공급된 기체가 제2 관통 홀(185)에 균일하게 공급될 수 있도록 기체를 일시적으로 보유하는 역할을 수행할 수 있다. 따라서, 상기 버퍼 공간(190)의 직경 내지 폭은, 제1 관통 홀(180)의 직경 내지 폭보다 크고, 제2 관통 홀(185)의 직경 내지 폭보다도 클 수 있다. 또한, 버퍼 공간(190)은 기체 공급 채널(150)의 중심으로부터 일정 간격 이격된 원주를 따라 연속으로 형성될 수 있다.
기판 처리 장치는 기체 공급 채널(150)과 공급된 제1 기체 공급부(미도시) 및 제1 관통 홀(180)과 연결된 제2 기체 공급부(미도시)를 더 포함할 수 있다. 또한, 기판 처리 장치는 상기 제1 기체 공급부 및 상기 제2 기체 공급부를 제어하도록 구성된 제어부(미도시)를 더 포함할 수 있다. 일 실시예에서, 상기 제어부는 상기 제1 기체 공급부 및 상기 제2 기체 공급부를 독립적으로 제어하도록 더 구성될 수 있다. 제어부의 기체 공급부의 독립적인 제어 동작에 대해서는 아래에서 보다 구체적으로 설명하기로 한다.
기판 처리 장치는 RF 로드(130)를 더 포함할 수 있다. RF 로드(130)는 격벽(110)의 적어도 일부를 관통하여 상기 기체 공급 유닛(120)과 연결될 수 있다. RF 로드(130)는 외부의 플라즈마 공급부(미도시)와 연결될 수 있다. 도면에는 2개의 RF 로드(130)가 도시되어 있는데, 본 발명은 그에 제한되지 않고, 1개 이상의 RF 로드(130)를 설치하여 반응 공간(160)에 공급되는 플라즈마 파워의 균일성을 향상시킬 수 있다.
기판 처리 장치는 격벽(110)의 하부 면과 접촉하도록 구성된 서셉터(200)를 더 포함할 수 있다. 서셉터(200)는 서셉터 지지부(210)에 의해 지지될 수 있고, 서셉터 지지부(210)는 상하 및 회전 운동을 할 수 있다. 서셉터 지지부(210)의 상하 운동에 의해 서셉터(200)가 격벽(110)으로부터 이격되거나 격벽(110)과 접촉함으로써, 반응 공간(160)이 개방되거나 폐쇄될 수 있다.
기판 처리 장치는 배기부(미도시)를 더 포함할 수 있다. 반응 공간(160)에서, 기판과의 화학반응 이후 잔존하는 잔류 기체는, 상기 배기부에 의해, 배기 통로(140) 통해 외부로 배기될 수 있다.
도 2는 본 발명의 기술적 사상에 의한 다른 실시예들에 따른 기체 공급 유닛 및 이를 포함하는 기판 처리 장치를 개략적으로 나타낸다. 이 실시예들에 따른 기체 공급 유닛 및 기판 처리 장치는 전술한 실시예들에 따른 기체 공급 유닛 및 기판 처리 장치의 변형예일 수 있다. 이하 실시예들간 중복되는 설명은 생략하기로 한다.
도 2를 참조하면, 기판 처리 장치는 격벽(110) 및 격벽(110) 내에 실질직으로 수평하게 똑바로 위치해 있는 기체 공급 유닛(120), 격벽(110) 내의 기체 공급 유닛(120)과 실질적으로 평행하게 마주보도록 위치한 서셉터(200)를 포함할 수 있다.
격벽(110) 내에 마련되어 진공펌프로 연결된 배기 통로(140)는 격벽(110) 내 반응 공간(160)의 잔류 기체를 진공 배출시키는데 이용될 수 있다.
기체 공급 유닛(120)은 샤워헤드일 수 있고, 샤워헤드의 베이스는 원료가스를 분출하도록 형성된 다수의 미세공(220)을 포함할 수 있다. 샤워헤드는 기체 공급 채널(150)을 통해 원료가스 공급 탱크에 연결될 수 있다. 고주파(RF) 전원은 일측 전극으로서 기능하는 샤워헤드와 전기적으로 연결될 수 있다.
서셉터(200)는 지지대에 의해 지지되며, 타측 전극으로서 기능할 수 있다. 서셉터(200)의 표면에는 반도체 기판과 같은 피처리 기판이 로딩될 수 있고, 상기 피처리 기판은 진공 흡착 등에 의해 고정될 수 있다.
또한, 전술한 바와 같이, 제2 관통 홀(185)은 샤워헤드의 상부 부분의 적어도 일부를 관통하도록 형성될 수 있다. 따라서, 제1 관통 홀(180)이 제2 관통 홀(185)을 통해 샤워헤드의 기체 흐름 채널(170)과 연통할 수 있다.
도 3 내지 도 6은 본 발명의 기술적 사상에 의한 다른 실시예들에 따른 기체 공급 유닛을 나타내는 단면도들이다. 이 실시예들에 따른 기체 공급 유닛은 도 2의 기체 공급 유닛의 변형예일 수 있다. 이하 실시예들간 중복되는 설명은 생략하기로 한다.
도 3을 참조하면, 샤워헤드의 하부 표면은 곡률을 갖도록 형성될 수 있다. 보다 구체적으로, 상부 전극인 샤워 헤드와 피처리 사이의 거리는 중심에서 가장 크고 가장자리를 향하여 갈수록 점점 줄어들 수 있다. 샤워 헤드에 형성된 관통 홀(185)은 샤워헤드의 중심을 기준으로 비대칭적으로 형성될 수도 있다.
도 4를 참조하면, 관통 홀(185)은 하나의 메인 홀에서 복수의 서브 홀들로 나뉘는 구성을 포함할 수 있다. 또한, 선택적인 실시예에서, 복수의 서브 홀들의 직경은 다르게 설정될 수 있다. 예를 들어, 도 5를 참조하면, 가장자리에 형성된 제1 서브 홀의 직경 내지 폭(w1)은 상대적으로 크게, 그리고 중심에 가까운 제3 서브 홀의 직경 내지 폭(w3)은 상대적으로 작게 형성될 수 있다. 또한 제1 서브 홀과 제3 서브 홀 사이의 제2 서브 홀의 직경 내지 폭(w2)은 w1<w2<w3가 되도록 형성될 수 있다. 이렇게 형성된 관통 홀에 퍼지 기체를 공급할 경우, 가장자리에는 상대적으로 많은 퍼지 기체가 공급되고, 중심측에는 상대적으로 적은 퍼지 기체가 공급될 수 있고, 결과적으로 평평한 피처리 기판에 보다 균일한 박막이 증착될 수 있다.
도 6을 참조하면, 복수의 관통 홀들(185)은 피처리 기판의 패턴화된 구조물의 비표면적을 고려하여 배치될 수 있다. 예를 들어 피처리 기판의 패턴화된 구조물은 제1 비표면적을 갖는 제1 영역(R1), 상기 제1 비표면적보다 큰 제2 비표면적을 갖는 제2 영역(R2), 및 상기 제2 비표면적보다 큰 제3 비표면적을 갖는 제3 영역(R3)을 가질 수 있다. 이 경우, 제1 영역(R1)에는 관통 홀이 형성되지 않고, 제2 영역(R2)에는 하나의 관통 홀이 형성될 수 있으며, 제3 영역(R3)에는 복수의 관통 홀이 형성될 수 있다.
도 7은 본 발명의 기술적 사상에 의한 다른 실시예들에 따른 기체 공급 유닛 및 이를 포함하는 기판 처리 장치를 개략적으로 나타낸다. 이 실시예들에 따른 기체 공급 유닛 및 기판 처리 장치는 전술한 실시예들에 따른 기체 공급 유닛 및 기판 처리 장치의 변형예일 수 있다. 이하 실시예들간 중복되는 설명은 생략하기로 한다.
도 7을 참조하면, 격벽(110)을 포함하는 제1 덮개(240) 및 제2 덮개(250)는 서셉터(200)와 함께 반응 공간(160)을 형성할 수 있다. 보다 구체적으로, 반응 공간(160)의 하부는 서셉터(200)에 의해, 반응 공간(160)의 상부는 제1 덮개(240)에 의해, 반응 공간(160)의 양 측면은 제2 덮개(250)에 의해 형성될 수 있다.
기판 처리 장치가 증착 장치인 경우, 제1 덮개(240)는 샤워헤드를 포함할 수 있다. 제2 덮개(250)는 반응 측벽(W) 및 배기 통로(140)를 포함할 수 있다.
기판 처리 장치의 배기 구조는 하류 배기 구조로 구성될 수 있고, 이 때 상기 하류 배기 구조는 제2 덮개(250)에 의해 구현될 수 있다. 이 경우 증착에 이용되는 기체는 제1 덮개(240)의 샤워헤드를 통해 피처리 기판으로 분사되고 이후 제2 덮개(250)의 배기 통로(140)를 통해 하류 배기될 수 있다.
또한, 전술한 바와 같이, 제2 관통 홀(185)은 샤워헤드의 상부 부분의 적어도 일부를 관통하도록 형성될 수 있다. 따라서, 제1 관통 홀(180)이 제2 관통 홀(185)을 통해 샤워헤드의 기체 흐름 채널(170)과 연통할 수 있다.
도 8 내지 도 11은 본 발명의 기술적 사상에 의한 다른 실시예들에 따른 기판 처리 장치를 이용한 박막 제조 방법을 개략적으로 나타낸다. 이 실시예들에 따른 박막 제조 방법은 전술한 실시예들에 따른 기체 공급 유닛 및 기판 처리 장치를 이용하여 수행될 수 있다. 이하 실시예들간 중복되는 설명은 생략하기로 한다.
도 8 내지 도 11을 참조하면, 박막 제조 방법은 소스 기체를 공급하는 제1 단계(t1), 상기 소스 기체를 퍼지하는 제2 단계(t2), 반응 기체를 공급하는 제3 단계(t3), 플라즈마를 공급하는 제4 단계(t4)를 포함할 수 있다. 상기 소스기체, 상기 반응기체, 및 상기 플라즈마의 공급은 순차적으로 이루어질 수 있다. 퍼지 기체는 제2 단계 동안 반응공간으로 일시적으로 공급될 수 있다. 선택적인 실시예에서, 퍼지 기체는 상기 소스기체, 상기 반응기체, 및 상기 플라즈마의 공급 동안 반응공간으로 지속적으로 공급될 수도 있다.
추가적으로, 제1 단계 내지 제4 단계 이후 잔여 기체들을 퍼지하는 제5 단계(t5)가 수행될 수 있다. 또한, 제1 단계 내지 제4단계(또는 제1 단계 내지 제5 단계)는 하나의 기본 사이클로 하여 수회 반복될 수도 있다.
도 8을 참조하면, 제3 단계(t3) 동안, 반응 기체는 기체 공급 유닛(120)의 중심에 형성된 기체 공급 채널(150)과 기체 흐름 채널(170)을 통해 반응 공간(160)으로 공급될 수 있다. 또한, 반응 기체는 기체 공급 유닛(120)의 중심과 가장자리 사이에 형성된 제2 관통 홀(185)을 통해 반응 공간(160)으로 공급될 수도 있다. 나아가, 제3 단계(t3) 동안 제2 관통 홀(185)에 퍼지 기체가 공급될 수도 있다. 제2 관통 홀(185)에 공급되는 반응 기체 및/또는 퍼지 기체의 유량을 조절함으로써, 증착되는 박막의 균일성이 달성될 수 있다.
또한 도 9를 참조하면, 제1 단계(t1) 동안, 소스 기체는 기체 공급 유닛(120)의 중심에 형성된 기체 공급 채널(150)과 기체 흐름 채널(170)을 통해 반응 공간(160)으로 공급될 수 있다. 또한, 소스 기체는 기체 공급 유닛(120)의 중심과 가장자리 사이에 형성된 제2 관통 홀(185)을 반응 공간(160)으로 공급될 수도 있다. 나아가, 제1 단계(t1) 동안 제2 관통 홀(185)에 퍼지 기체가 공급될 수도 있다. 제2 관통 홀(185)에 공급되는 소스 기체 및/또는 퍼지 기체의 유량을 조절함으로써, 증착되는 박막의 균일성이 달성될 수 있다.
제2 관통 홀(185)을 통한 퍼지 기체, 반응 기체, 및/또는 소스 기체의 공급은 피처리 기판 상에 증착되는 박막의 균일성을 달성하기 위한 것이다. 이러한 박막의 균일성은 평평한 기판 기준으로 균일한 두께의 박막이 형성되는 것을 의미할 수도 있고, 일부 패턴화된 구조물이 형성된 기판을 기준으로 균일한 두께의 박막이 형성되는 것을 의미할 수도 있다. 다시 말해, 제2 관통 홀(185)의 위치, 형상, 및 개수 등은 증착 장치의 구성요소들의 형상, 배치 등을 고려할 뿐만 아니라, 피처리 기판에 형성된 패턴화된 구조물의 비표면적 등도 고려하여 설계될 수 있다.
예를 들어, 도 10에 나타난 바와 같이, 제2 관통 홀(185)은 피처리 기판의 특정 적층 구조물이 형성된 위치에 대응되게 배치될 수 있고, 그에 따라 반응 기체는 제2 관통 홀(185)을 통해 피처리 기판의 해당 적층 구조물 상에 공급될 수 있다. 또한, 도 11에 나타난 바와 같이, 소스 기체는 제2 관통 홀(185)을 통해 피처리 기판의 적층 구조물 상에 공급될 수 있다.
이러한 소스 기체 및/또는 반응 기체의 과공급(oversupply)을 이용하여, 비표면적이 큰 적층 구조물에 대해 보다 많은 증착이 이루어질 수 있도록 할 수 있다. 반응 기체의 과공급은 평평한 기판 기준으로는 박막 증착의 균일성을 저해하는 요소가 되지만, 비표면적이 큰 적층 구조물이 형성된 기판(즉, 중간물) 기준으로는 박막 증착의 균일성을 향상시키는 요소가 될 수 있기 때문이다.
도 12 및 도 13은 본 발명의 기술적 사상에 의한 다른 실시예들에 따른 기판 처리 장치를 개략적으로 나타낸다. 이 실시예들에 따른 기판 처리 장치는 전술한 실시예들에 따른 기판 처리 장치의 변형예일 수 있다. 이하 실시예들간 중복되는 설명은 생략하기로 한다.
도 12를 참조하면, 반응기(1)는 반응기 벽(2)과 서셉터(25)가 면접촉(face-contact)및 면실링(face-sealing)을 하면서 반응 공간(18)을 형성한다. 상기 서셉터(25)에는 기판이 탑재되며 기판의 탑재/탈착(loading/unloading)을 위해 서셉터(25) 하부는 상승/하강을 할 수 있는 장치와 연결되어 있다(미도시).
반응기 벽(2)의 내부 공간은, 제1 격벽(5)에 의해 제1 영역(3)과 제2 영역(4)으로 분리될 수 있다. 상기 제1 영역(3)은 상기 반응기(1)의 상부영역, 상기 제2 영역(4)은 하부영역에 각각 해당된다. 상기 제1 영역(3)은 제2 격벽(6)에 의해 제3 영역(8)과 제4 영역(13)으로 나뉠 수 있다.
또한, 제3 격벽(7)에 의해 상기 제4 영역(13)과 제5 영역(14)으로 분리될 수 있다. 즉, 제3 격벽(7)이 반응기 벽(2)과 제2 격벽(6) 사이에 배치되어, 제4 영역(13)과 제5 영역(14)이 형성될 수 있다.
상기 제3 영역(8)에는 제1 관통홀(9)이 형성될 수 있다. 상기 제1 관통홀(9)은 상기 제1 격벽(5)을 관통하여 반응기 상부공간인 상기 제3 영역(8)과 반응기 하부 공간인 상기 제2 영역(4)을 연결한다. 상기 제1 관통홀(9)과 상기 제3 영역(8)사이에는 제1 단차(15)가 형성된다.
한편, 상기 제2 영역(4)과 상기 제1 격벽(5)사이에는 제6 영역(17)이 형성된다. 상기 제3 영역(8)을 관통하는 상기 제1 관통홀(9)은 상기 제6 영역(17)을 향해 점차 넓어진다. 상기 제6 영역(17)을 향해 넓어지는 제1 관통홀(9)의 공간에는 외부 대기(air)로 충진될 수 있다. 상기 외부 대기는 플라즈마 공정 시 절연체의 역할을 하게 되며, 그에 따라 상기 공간 내에 기생 플라즈마가 생기는 것이 방지될 수 있다. 또한 상기 제6 영역(17)은 제4 격벽(19)을 더 포함하며, 상기 제4 격벽(19)은 백플레이트(20)을 지지하는 역할을 한다.
제1 관통홀(9)에는 기체 유입부가 삽입된다. 기체 유입부는 제1 기체 유입구(26), 플랜지(27)로 이루어지며 내부를 관통하는 제1 기체 공급 채널(28)을 포함한다. 상기 제1 기체 공급 채널(28)은 상기 제1 기체 유입구(26)와 상기 플랜지(27)를 관통하여 상기 제2 영역(4)으로 이어진다. 상기 제1 기체 유입구(26)와 상기 플랜지(27)의 결합부위에는 오링(O-ring)과 같은 밀봉 부재가 삽입될 수 있고, 그에 따라 상기 제1 기체 유입 채널(28)이 외부 대기로부터 격리될 수 있다. 상기 제1 기체 유입구(26)에는 제1 기체 공급 통로(29)와 제2 기체 공급 통로(30)가 연결되어 있어, 기판을 처리할 때 사용되는 기체가 공급된다. 가령, 원자층 증착 공정에 사용되는 소스기체, 반응기체 및 퍼지 기체 등은, 상기 제1 기체 공급 통로(29), 제2 기체 공급 통로(30), 상기 제1 기체 공급 채널(28)를 통해 반응공간(18)으로 공급된다. 상기 플랜지(27)는 바람직하게는 절연체로 이루어지며 플라즈마 공정 시 플라즈마 파워가 누설되는 것을 방지한다.
반응기(1)는 상기 제3 격벽(7)의 일면을 관통하는 제2 관통 홀(10)을 더 포함한다. 상기 제2 관통 홀(10)은 상기 제3 격벽(7)과 상기 제1 격벽(5)을 차례로 관통하여 상기 제2 영역(4)으로 연결된다. 상기 제2 관통 홀(10) 상부는 제2 기체 유입구(31)와 결합된다. 상기 결합면에는 O-ring과 같은 밀봉 부재가 삽입되어, 외부 대기의 유입이 방지된다. 상기 제2 기체 유입구(31)와 상기 제2 관통홀(10)을 통해 소스 기체 혹은 반응기체 혹은 퍼지기체가 공급될 수 있다. 전술한 바와 같이, 제2 관통홀(10)은 복수개로 구성될 수 있다.
상기 제1 격벽(5)과 상기 반응공간(18)사이에는 백 플레이트(20), 기체 채널(21), 및 기체 공급 플레이트(22)가 차례로 배치된다. 상기 기체 공급 플레이트(22)와 상기 기체 채널(21)은 결합 부재로 결합될 수 있다. 상기 기체 채널(21)과 상기 제1 격벽(5)도 결합 부재로 결합될 수 있다.
일 예로, 기체 채널(21)과 제1 격벽(5)은 백플레이트(20)를 통하여 결합될 수 있다. 그 결과 제1 격벽(5)으로부터 돌출된 제4 격벽(19) 위로 백플레이트(20), 기체 채널(21), 및 기체 공급 플레이트(22)가 차례로 적층될 수 있다. 상기 기체 공급 플레이트(22)는 반응공간(18)의 기판(미도시)에 기체를 공급하는 복수개의 홀들을 포함할 수 있다. 예를 들어, 기체 채널(21) 및 기체 공급 플레이트(22)를 포함하는 기체 공급 유닛은 샤워헤드일 수 있고, 다른 예에서 기체 공급 유닛은 물질의 식각 내지 연마를 위한 원료가 균일하게 공급되는 장치일 수도 있다.
상기 기체 채널(21)과 상기 기체 공급 플레이트(22)사이에는 기체 흐름 채널(24)이 형성되는데, 상기 제1 기체 공급 채널(28)을 통해 공급된 기체가 상기 기체 공급 플레이트(22)에 고르게 공급되도록 한다. 상기 기체 흐름 채널(24)은 그 폭이 중앙부에서 주변부를 향하여 점차 좁아지도록 형성될 수 있다.
상기 백 플레이트(20)와 상기 기체 채널(21)의 일면에는 제3 관통홀(23)이 형성될 수 있다. 상기 백플레이트(20), 상기 기체 채널(21) 그리고 상기 제3 관통홀(23) 사이에는 제2 단차(16)가 형성된다. 본 발명에서, 상기 제3 관통홀(23)은 상기 백 플레이트(20)와 상기 기체 채널(21)의 중심부를 관통하며, 상기 기체 유입부의 플랜지(27)는 상기 제1 단차(15)와 상기 제2 단차(16)까지 삽입되어 설치된다.
상기 플랜지(27)와 상기 제2 단차(16), 상기 제1 격벽(5)과 상기 백 플레이트(20), 및/또는 상기 백플레이트(20)와 상기 기체 채널(21)사이에는 O-ring과 같은 밀봉 부재가 삽입될 수 있다. 그에 따라 외부 대기로부터의 격리가 달성될 수 있다.
상기 반응기(1)는 상기 백플레이트(20)의 일면을 관통하는 제4 관통홀(11)과 상기 기체 채널(21)의 일면을 관통하는 제5 관통홀(12)을 더 포함한다. 상기 제4 관통홀(11)과 상기 제5 관통홀(12)은 상기 제2 관통홀(10)과 연결될 수 있다. 따라서 상기 제2 관통홀(10)을 통해 공급된 기체는 상기 기체 흐름 채널(24)로 공급된다.
상기 제5 관통홀(12)은 상기 기체 공급 플레이트(22)에 대해 수직으로 관통할 수 도 있고 도 12에 나타난 바와 같이 경사진 방향으로 상기 기체 채널(21)을 관통할 수도 있다. 또한 관통 방향은 상기 기체 흐름 채널(24)의 안쪽을 향할 수도 있고 혹은 바깥쪽을 향할 수도 있다. 또한, 제5 관통홀(12)은 기체 흐름 채널(24)의 중심과 가장자리 사이에 배치되고, 상기 가장자리로부터 이격되어 배치될 수 있다. 선택적으로, 제5 관통홀(12)의 위치는 피처리 기판의 비표면적이 큰 패턴화된 구조물의 위치와 대응되도록 결정될 수 있다.
상기 제4 관통홀(11) 및/또는 상기 제5 관통홀(12)은 상기 백 플레이트(20)및 상기 기체 채널(21)의 중심으로부터 일정간격을 유지하며 횡방향으로 복수개의 관통홀을 형성할 수 있다. 선택적으로, 상기 제4 관통홀(11) 및/또는 상기 제5 관통홀(12)은 상기 백 플레이트(20)및 상기 기체 채널(21)의 중심을 향하여 일정 간격을 유지하며 종방향으로 복수개의 관통홀을 형성할 수도 있다. 상기 제4 관통홀(11) 및/또는 상기 제5 관통홀(12)에 있어서, 원하는 공정에 따라 관통 홀간의 간격이 조절될 수 있다.
상기 제2 관통홀(10)과 상기 제4 관통홀(11)사이에 버퍼공간(buffer space, 38)이 더 형성될 수 있다. 상기 버퍼공간(38)은 상기 제2 관통홀(10)을 통해 공급된 기체가 상기 제4 관통홀에 균일하게 공급될 수 있도록 기체를 보유하는 역할을 수행한다. 선택적인 실시예에서, 버퍼 공간은 제4 관통홀(11)과 제5 관통홀(12) 사이에 형성될 수도 있다.
상기 반응기(1)의 반응기 벽(2) 내부에는 제1 배기부(32)가 형성된다. 상기 제1 배기부(32)는 제1 배기 홀(33)과 제1 배기 채널(34)을 포함한다. 제1 배기부(32)는 상기 제1 격벽(5)을 관통하는 상기 제1 배기 홀(33)을 통해 제5 영역(14)과 연결된다.
상기 제5 영역(14)의 상부는 배기 통로 덮개(36)와 결합되어 배기 통로가 형성될 수 있다. 상기 제5 영역(14)과 상기 배기 통로 덮개(36)의 결합면에는 오링(O-ring)과 같은 밀봉 부재가 삽입되어, 상기 배기 통로가 외부 대기로부터 격리될 수 있다. 또한, 상기 배기 통로 덮개(36)의 일 면은 기체 유출구(35)를 포함할 수 있다. 상기 기체 유출구(35)는 배기 펌프(미도시)와 연결되어 기체가 배기될 수 있다.
상기 반응기(1)의 제4 영역(13)의 상부는 안전을 위해 상부 덮개(37)와 결합할 수 있다. 상부 덮개(37)는 RF 분배 플레이트(39)를 외부로부터 보호한다.
도 13은 다른 방향에서 바라본 본 반응기(1)의 단면이다. 도 13을 참조하면, 반응기의 제1 격벽(5)에는 기체 공급 채널에 추가로, 제1 격벽(5)의 또 다른 일면을 관통하여 제2 영역(4)으로 이어지는 적어도 하나의 제6 관통 홀(43)이 형성될 수 있다. 상기 제6 관통 홀(43)은 제2 격벽(6)과 제3 격벽(7) 사이에 배치될 수 있다.
결합 부재(40)는 상기 제6 관통 홀(43)에 삽입될 수 있고, 그에 따라 상기 기체 채널(21)과 상기 제1 격벽(5)은 결합 부재(40)에 의해 기계적으로 결합될 수 있다. 백플레이트(20)는 그 일면에 결합 부재(40)가 관통하는 홀을 포함하고, 백플레이트(20)는 상기 기체 채널(21)과 함께 상기 제1 격벽(5)에 기계적으로 결합될 수 있다. 상기 결합 부재(40)는 전도체이며 바람직하게는 스크류(screw)일 수 있다.
상기 결합 부재(40) 주위에는 지지부재(41)가 삽입되어 있으며, 상기 지지부재(41)는 절연체로 되어 있다. 따라서, 상기 결합부재(40)와 상기 제1 격벽(5)이 상기 지지부재(41)에 의해 전기적으로 절연될 수 있고, 그에 따라 플라즈마 공정 시 플라즈마 파워가 누설되는 것이 방지될 수 있다.
상기 기체 채널(21) 및 상기 기체 공급 플레이트(22)는 전도체로 이루어질 수 있다. 따라서 상기 기체 채널(21) 및 상기 기체 공급 플레이트(22)는 플라즈마 공정 시 플라즈마 파워를 전달하는 전극 역할을 한다.
상기 플랜지(27), 상기 백 플레이트(20) 및 상기 지지부재(41)는 절연체로 구성될 수 있다. 따라서 플라즈마 파워가 상기 제1 격벽(5)을 통해 상기 반응기벽(2)으로 누설되는 것이 방지될 수 있다. 또한, 상기 플랜지(27) 주변의 제1 관통홀(9)과 상기 제 6 영역(17)을 외부 대기(air)로 충진 함으로써, 해당 공간에 기생 플라즈마가 생기는 것이 방지될 수 있다.
하부영역(제2 영역(4))에 배치된 상기 기체 채널(21) 및 상기 기체 공급 플레이트(22)는 별도의 결합 부재(42)에 의해 서로 결합될 수 있다. 상기 결합 부재(42)는 전도체로 이루어지며 바람직하게는 스크류(screw)일 수 있다. 선택적인 실시예에서, 기체 공급 유닛에 포함된 기체 채널(21) 및 기체 공급 플레이트(22)는 일체화되어 형성될 수도 있다.
도 14는 전술한 기판 처리 장치의 배기부 부분을 확대한 그림이다. 도 14를 참조하면, 배기부는 제1 배기부(32) 및 제2 배기부(44)를 포함한다. 상기 제1 배기부(32)는 제1 배기 홀(33)과 제1 배기 채널(34)로 이루어지며 상기 제2 배기부(44)는 제2 배기홀(45)과 제2 배기 채널(46)로 이루어진다. 상기 배기홀들(33, 45)은 상기 제1 격벽(5)을 관통하도록 형성될 수 있다. 또한, 상기 배기홀들(33, 45)은 상기 배기통로(즉, 제5 영역(14))와 상기 배기 채널(34, 46)을 서로 연결할 수 있다.
반응공간(18)에서, 기판과의 화학반응 후에 남겨진 잔류 기체는, 상기 배기부(32, 44)를 통해 배기된다. 대부분의 잔류 기체는 배기 간극(48)을 통해 "A" 영역으로 유동할 수 있다. 이후 "A" 영역의 잔류 기체는 제1 배기부(32)를 지나 배기 통로인 제 5 영역(14)으로 배기될 수 있다.
한편 기체 채널과 기체 공급 플레이트 옆의 사각 지대(blind spot)인 "B" 영역에 갇힌 기체는, 제2 배기부(44)를 통해 배기 통로인 제 5 영역(14)으로 배기될 수 있다. 상기 제1 배기홀(33)과 상기 제2 배기홀(45)의 직경은 각각 상기 제1 배기 채널(34)과 상기 제2 배기채널(46)의 직경과 같거나 다를 수 있다. 이러한 제1 배기홀(33), 제2 배기홀(45), 제1 배기 채널(34), 및/또는 제2 배기채널(46)의 직경들의 비를 적절히 조절함으로써, 기판 가장 자리 부근에서의 배기 효율이 제어될 수 있고, 그에 따라 박막의 균일도가 조절될 수 있다. 또한 배기 간극(48)의 크기를 조절함으로써 배기 효율 및 박막의 균일도가 제어될 수 있다.
도 15 내지 도 17은 본 발명의 기술적 사상에 의한 또 다른 실시예들에 따른 반응기 및 이를 포함하는 기판 처리 장치를 개략적으로 나타낸다. 이 실시예들에 따른 기판 처리 장치는 전술한 실시예들에 따른 기판 처리 장치의 변형예일 수 있다. 이하 실시예들간 중복되는 설명은 생략하기로 한다.
도 15를 참조하면, 반응기는 제1 기체 유입구(26), 기체 유출구(35), 및 배기 통로 덮개(36)에 추가로, 보호 덮개(50)를 더 포함할 수 있다. 보호 덮개(50)는 RF 전달 플레이트(RF delivery plate)를 보호하기 위한 보호 덮개이다.
보호 덮개(37)가 제거된 모습이 도 16 및 도 17에 도시된다. 도 16 및 도 17을 참조하면, RF 전달 플레이트(52)는 RF 분배 플레이트(RF distribution plate; 39)와 연결된다. 상기 RF 분배 플레이트(39)는 복수개의 RF 로드(54)와 전기적으로 연결된다. 일 예에서, 복수개의 RF 로드(54)는 RF 전력의 균일한 공급을 위해 상기 기체 채널(21)의 중심(예를 들어, 제1 기체 유입구(26)의 중심)을 기준으로 대칭적으로 배치될 수 있다.
RF 전달 플레이트(52)의 상부는 RF 발생기(RF generator, 미도시)와 연결될 수 있다. RF 전달 플레이트(52)의 하부는 RF 분배 플레이트(39)와 연결될 수 있다. RF 분배 플레이트(39)는 RF 로드(54)와 연결될 수 있다.
따라서, RF 발생기에서 발생한 RF전력은 RF 전달 플레이트(52), RF 분배 플레이트(39), 및 RF 로드(54)를 거쳐 기체 채널(21)로 전달된다. 기체 채널(21)은 기체 공급 플레이트(22)와 기계적으로 연결되어 있어, 기체 채널(21)과 기체 공급 플레이트(22)는 함께 RF 전극(RF electrode)의 역할을 한다.
반응기에는 적어도 하나의 RF 로드(54)가 설치될 수 있다. RF 로드(54)는 제1 격벽(도 12의 5) 중에서 제2 격벽(도 12의 6)과 제3 격벽(도 12의 7) 사이에 배치된 부분을 관통하도록 형성될 수 있다. 추가적인 실시예에서, 도 17에 나타난 바와 같이, 적어도 2개의 RF 로드(54)가 설치될 수 있고, RF 로드(54)는 반응기의 중심을 기준으로 대칭적으로 배치될 수 있다. 이러한 대칭적 배치에 의해 RF 전력이 균일하게 RF 전극(21,22)으로 공급될 수 있다.
선택적인 실시예에서, 삽입형 히터(catride heater, 미도시)가 반응기 벽 상부에 설치되어 반응기 벽이 가열될 수 있다. 바람직하게는 복수개의 삽입 히터가 대칭적으로 배치되어, 반응기 벽의 균일한 온도 구배가 달성될 수 있다.
도 18 및 도 19는 본 발명의 기술적 사상에 의한 실시예들에 따른 반응기 구조를 개략적으로 나타낸다. 이 실시예들에 따른 반응기는 전술한 실시예들에 따른 반응기 벽의 사시도(도 18) 및 배면도(도 19)일 수 있다.
도 18 및 도 19를 참조하면, 제2 격벽(6)은 반응기 벽(2)의 상부 공간의 중심으로부터 일정 간격 이격되어 배치될 수 있다. 제3 격벽(7)은 반응기 벽(2)의 측벽과 제2 격벽(6) 사이에 배치될 수 있다. 상부 공간으로부터 하부 공간으로 연장되는 기체 공급 채널은 제2 격벽(6) 구조에 의해 제공될 수 있다.
제4 격벽(19)은 백 플레이트(도 12의 20)의 상면과 접촉하여 백 플레이트(20)를 지지할 수 있다.
스크류 홀(56)에는 결합 부재(40) 및 지지부재(41)가 삽입될 수 있다. 그에 따라 상기 기체 채널(도 12의 21) 및 상기 백플레이트(도 12의 20)가 제1 격벽(도 12의 5)과 기계적으로 연결될 수 있다.
RF 로드 홀(58)에는 RF 로드(54)가 삽입되어 상기 기체 채널(21)과 전기적으로 연결될 수 있다.
상기 제5 영역(14)는 배기 통로가 형성되며, 제1 배기홀(33) 및 제 2 배기홀(45)은 제1 배기 채널(도 14의 34) 및 제2 배기 채널(도 14의 46)과 각각 연결되어 배기부를 형성할 수 있다.
제1 관통홀(9)은 제6 영역(도 12의 17)을 향해 점차 넓어질 수 있다. 상기 제6 영역의 공간은 외부 대기(air)로 채워질 수 있고, 이는 플라즈마 공정시 절연체 역할을 수행한다. 따라서 상기 제1 관통홀(9)에 의해 형성된 공간에 기생 플라즈마가 생기는 것이 방지될 수 있다.
도 20 및 도 21은 본 발명의 기술적 사상에 의한 실시예들에 따른 백플레이트 구조를 개략적으로 나타낸다. 이 실시예들에 따른 반응기는 전술한 실시예들에 따른 백플레이트의 사시도(도 20) 및 배면도(도 21)일 수 있다.
백플레이트(20)는 제1 격벽(도 12의 5)과 기체 채널(도 12의 21)사이에 위치한다. 또한 절연체로 이루어져 있어 플라즈마 공정 시 제1 격벽(도 12의 5)을 RF 전극인 기체 채널(21) 및 기체 공급 플레이트(22)로부터 절연하는 역할을 한다.
백플레이트(20)의 상/하면에는 중심으로부터 일정 거리를 유지하면서 복수개의 제4 관통홀들(11)이 형성될 수 있다. 상기 제4 관통홀들(11)은 제2 관통홀(도 12의 10)로부터 기체를 공급받아 상기 기체 채널(도 12의 21)을 관통하는 제5 관통홀(도 12의 12)로 기체를 공급한다. 상기 백 플레이트(20)의 중심부에는 제3 관통홀(23)이 있으며 상기 플랜지(도 12의 27)가 상기 제3 관통홀(23)에 삽입된다.
도 22 내지 도 24는 본 발명의 실시예들에 따른 기체 공급 유닛에 포함된 기체 채널(21)의 사시도(도 22), 상면도(도 23) 및 배면도(도 24)를 보여준다.
기체 채널(21)은, 기체 채널(21)의 중심부에서 일정 거리를 유지한 채로 배치된 복수개의 제5 관통홀들(12)을 포함할 수 있다.
도 23을 참조하면, 기체 채널(21)의 상부면의 제5 관통홀들(12)의 위치는 도 20 및 도 21에 나타난 백플레이트(20)의 제4 관통홀들(11)의 위치에 상응할 수 있다.
기체 채널(21)에 형성된 제5 관통홀들(12)은 상기 기체 채널(21)을 수직으로 관통할 수도 있고 혹은 경사지게 관통할 수도 있다.
예를 들어, 도 23을 참조하면, 제5 관통 홀(12)은 기체 채널(21)의 제1 면 상에서 제1 지름(d)을 갖는 제1 원주를 따라 배치 또는 형성될 수 있다. 또한 도 24를 참조하면, 제5 관통 홀(12)은 기체 채널(21)의 제2 면 상에서 제2 지름(d')을 갖는 제2 원주를 따라 배치 또는 형성될 수 있다. 일 예로서, 상기 제1 지름(d)은 상기 제2 지름(d')보다 클 수 있다. 그러나 본 발명은 그러한 예에 제한되지 아니하며, d=d'일 수 있거나 혹은 d≠d'일 수 있다.
도 25는 백플레이트(20)와 기체채널(21)을 관통하는 제4 관통홀(11) 및 제5 관통홀(12)의 다양한 실시예들를 나타낸다.
도 25에 나타난 바와 같이, 기체 채널(21)을 관통하는 제5 관통홀(12)은 기체 공급 플레이트(22)에 대해 수직으로 관통할 수도 있고 혹은 경사지게 관통할 수도 있다. 경사지게 관통할 경우, 제5 관통홀(12)은 기체 흐름 채널(24)의 안쪽을 향할 수도 있고 혹은 바깥쪽을 향할 수도 있다. 비록 도면에 도시되지는 않았지만, 제4 관통홀(11) 역시 수직으로 연장되는 형상에 제한되지 않음에 유의한다.
도 26은 제3 격벽(7), 제1 격벽(5), 백플레이트(20), 및 기체 채널(21)을 관통하는 제2 관통홀(10), 제4 관통홀(11) 및 제5 관통홀(12)의 또 다른 실시예를 나타낸다.
도 26에 나타난 바와 같이, 제2 기체 유입구(31), 제2 관통홀(10), 버퍼 공간(38), 제4 관통홀(11) 및 제5 관통홀(12)은 모두 복수개로 이루어져 있으며 복수의 기체가 상기 제2 기체 유입구들(31)을 통해 기체 흐름 채널(24)로 공급된다. 가령, 소스기체와 반응기체와 퍼지기체가 각각의 유입구를 통해 공급될 수 있다.
상기 제2 관통홀(10), 상기 제4 관통홀(11) 그리고 상기 제5 관통홀(12)을 통해 상기 기체 흐름 채널(24)로 공급된 기체는, 하부의 기체 공급 플레이트(22)의 가장자리 부분을 통해, 반응 공간(18)의 가장 자리영역, 혹은 반응 공간(18)의 중심부와 가장자리 사이 영역으로 공급될 수 있다. 그 결과, 피처리 기판 상에 형성되는 박막의 가장자리 영역(엣지 부분) 혹은 기판의 중심부와 가장자리 영역 사이의 특정 주변부의 박막 균일도 혹은 박막 특성을 선택적으로 제어할 수 있다.
예를 들어, 상기 관통홀들(10, 11, 12)을 통해 공급되는 기체의 유량, 그리고 상기 기체 채널(21)을 관통하는 제 5 관통홀(12)의 경사도에 따라, 기판의 가장자리 영역 혹은 기판의 중심부와 가장자리 사이의 영역에 증착되는 박막의 균일도가 선택적으로 조절될 수 있다. 또한 이러한 요소들에 의해, 기판의 중심부에 증착되는 박막과의 균일도 편차가 감소되거나 제어될 수 있다.
예를 들어, 기판의 가장자리 부분과 중심부분의 균일도 편차가 최소화 된 균일한 박막이 증착될 수 있다. 다른 예에서, 기판의 중심부 보다 가장자리 부분이 두꺼운 오목한 형태(concave)의 박막이 증착될 수 있고 혹은 기판의 중심 부분이 가장자리 부분보다 두꺼운 볼록한 형태(convex)의 박막이 증착될 수도 있다. 상기 제 2관통홀(10), 상기 제 4 관통홀(11) 및 상기 제 5 관통홀(12)을 통해 공급되는 기체는 비활성 기체일 수 있다. 선택적인 실시예에서 상기 기체는 박막 형성에 참여하는 반응기체 및/또는 소스 기체일 수 있다.
도 27 및 도 28은 본 발명에 따른 반응기에서 PEALD 방법으로 기판에 증착된 SiO2 박막의 두께를 나타낸다. 상기 그래프는 상기 제2 관통홀(10), 상기 제4 관통홀(11) 그리고 상기 제5 관통홀(12)을 통해 공급된 기체가 박막의 균일도, 특히 기판의 가장자리에 증착된 박막의 균일도에 미치는 영향을 나타낸다.
상기 그래프의 가로축은 기판을 중심으로 좌우로 각각 150mm씩의 거리를 나타낸다(기판의 지름은 300mm). 그리고 세로축은 박막의 두께를 나타낸다. 상기 실시예 에서는 상기 기체 채널(21)을 관통하는 제5 관통홀(12)의 각도를 30도로 하였고 기체 유량을 다양하게 하면서 영향성을 평가하였다.
[표 1]
표 1에 나타난 바와 같이, 기체 공급 채널인 제1 관통홀(main hole)을 통해서는 소스 캐리어로서 Ar이 1000 sccm 공급되고, 퍼지 가스로서 Ar이 3500sccm 공급되었으며, 반응 가스로서 O2 200 sccm이 전 공정기간 동안 연속적으로 공급될 수 있다(따라서 총 유량은 4,700 sccm 이다). 400watt의 플라즈마가 공급되며 공정 시 반응공간의 압력은 2 torr를 유지하였다.
산소는 플라즈마가 공급될 경우에만 활성화되어 기판상에서 소스분자와 반응할 수 있다. 따라서 산소는 플라즈마가 공급되지 않을 때는 퍼지기체의 역할을 수행하게 된다. 따라서 산소는 본 공정에서는 반응성 퍼지 기체(reactive purge gas)의 역할을 할 수 있다.
한편 제2 관통홀을 통해 공급되는 기체는 Ar 혹은 O2일 수 있다. 상기 기체 역시 전 공정 기간 동안 연속적으로 공급될 수 있다. 한편 상기 기체의 유량은 기판 주변에 원하는 박막 균일도에 맞추어 적절히 조절될 수 있다.
이하의 실시예에 따른 발명을 요약하면 다음과 같은 구성으로 이루어질 수 있다.
- 제1 관통 홀을 통해, 소스 기체, 퍼지 기체, 및 반응성 퍼지 기체를 연속적으로 공급하는 제1 단계
- 제2 관통 홀을 통해, 퍼지 기체 및 반응성 퍼지 기체 중 적어도 하나를 연속적으로 공급하는 제2 단계
- 플라즈마를 인가하는 제3 단계
- 제1 단계 및 제2 단계는 동시에 수행될 수 있고, 제3 단계는 제1 단계 및 제2 단계가 수행되는 동안 일시적으로 수행될 수 있음.
여기서 제1 관통 홀은 기체 공급 채널(도 12의 28)과 대응되고, 제2 관통 홀은 기체 공급 유닛의 적어도 일부를 관통하도록 형성된 관통 홀(도 12의 10, 11, 12)과 대응된다.
도 27에 나타난 바와 같이, 제2 관통홀을 통해 공급되는 Ar기체의 유량이 증가할수록, 기판 가장자리에 증착된 박막의 두께가 낮아짐을 알 수 있다. 한편, 도 28에 나타난 바와 같이, 제2 관통홀을 통해 공급되는 산소 기체의 유량이 증가할수록 기판 가장자리에 증착된 박막의 두께가 증가함을 알 수 있다. 즉, 반응 공간의 주변부에 공급되는 소스기체, 반응 기체에 대해 기판 주변부에 차폐효과(blocking effect)를 유도하고 제어함으로써 기판상 박막의 균일도가 제어될 수 있다.
본 발명을 명확하게 이해시키기 위해 첨부한 도면의 각 부위의 형상은 예시적인 것으로 이해하여야 한다. 도시된 형상 외의 다양한 형상으로 변형될 수 있음에 주의하여야 할 것이다.
이상에서 설명한 본 발명이 전술한 실시예 및 첨부된 도면에 한정되지 않으며, 본 발명의 기술적 사상을 벗어나지 않는 범위 내에서 여러 가지 치환, 변형 및 변경이 가능하다는 것은, 본 발명이 속하는 기술분야에서 통상의 지식을 가진 자에게 있어 명백할 것이다.
Claims (20)
- 기체 공급 채널을 제공하는 격벽; 및
상기 기체 공급 채널에 연결된 기체 공급 유닛을 포함하고,
상기 기체 공급 유닛 내부에 상기 기체 공급 채널과 연통하는 기체 흐름 채널이 형성되며,
제1 관통 홀이 상기 격벽의 적어도 일부를 관통하도록 형성되고, 제2 관통 홀이 상기 기체 공급 유닛의 적어도 일부를 관통하도록 형성되어, 상기 제1 관통 홀이 상기 제2 관통 홀을 통해 상기 기체 흐름 채널과 연통하고,
상기 제2 관통 홀은 상기 기체 흐름 채널의 중심과 가장자리 사이에 배치되고, 상기 가장자리로부터 이격되어 배치되며,
상기 제1 관통 홀과 상기 제2 관통 홀 사이에 버퍼 공간이 형성되고,
상기 버퍼 공간은 상기 기체 공급 채널의 중심으로부터 일정 간격 이격된 원주를 따라 연속으로 형성된 것을 특징으로 하는, 기판 처리 장치. - 청구항 1에 있어서,
상기 격벽의 적어도 일부를 관통하여 상기 기체 공급 유닛과 연결된 RF 로드(RF rod)를 더 포함하는, 기판 처리 장치. - 청구항 1에 있어서,
상기 기체 공급 유닛은 기체 채널 및 기체 공급 플레이트를 포함하고,
상기 기체 흐름 채널은 상기 기체 채널과 상기 기체 공급 플레이트 사이에 형성된 것을 특징으로 하는, 기판 처리 장치. - 청구항 3에 있어서,
상기 기체 흐름 채널의 폭은 중심에서 주변을 향하여 점차 좁아지는 것을 특징으로 하는, 기판 처리 장치. - 청구항 3에 있어서,
상기 제2 관통 홀은 피처리 기판의 적층 구조물을 향하도록 배치된 것을 특징으로 하는, 기판 처리 장치. - 청구항 5에 있어서,
상기 제2 관통 홀은 상기 기체 공급 플레이트에 대하여 수직 방향으로 또는 경사진 방향으로 관통하는 것을 특징으로 하는, 기판 처리 장치. - 청구항 1에 있어서,
상기 버퍼 공간의 폭은 상기 제1 관통 홀의 폭보다 크고 상기 제2 관통 홀의 폭보다 큰 것을 특징으로 하는, 기판 처리 장치. - 삭제
- 청구항 1에 있어서,
상기 격벽의 하부 면과 접촉하도록 구성된 서셉터를 더 포함하는, 기판 처리 장치. - 청구항 1에 있어서,
상기 기체 공급 채널과 공급된 제1 기체 공급부;
상기 제1 관통 홀과 연결된 제2 기체 공급부; 및
상기 제1 기체 공급부 및 상기 제2 기체 공급부를 제어하도록 구성된 제어부를 더 포함하는, 기판 처리 장치. - 청구항 10에 있어서,
상기 제어부는 상기 제1 기체 공급부 및 상기 제2 기체 공급부를 독립적으로 제어하도록 더 구성된, 기판 처리 장치. - 반응기 벽;
상기 반응기 벽의 내부 공간을 상부 공간과 하부 공간으로 분리하는 제1 격벽;
상기 상부 공간의 중심으로부터 일정 간격 이격되어 배치된 제2 격벽;
상기 반응기 벽과 상기 제2 격벽 사이에 배치된 제3 격벽;
상기 상부 공간으로부터 상기 하부 공간으로 연장되는 기체 공급 채널;
상기 기체 공급 채널과 연결된 기체 공급 유닛;
상기 제3 격벽을 관통하는 제1 관통 홀;
상기 제1 관통 홀과 연통하며, 상기 기체 공급 유닛의 적어도 일부를 관통하는 제2 관통 홀;
상기 제2 관통 홀은 상기 공급 유닛의 중심과 가장자리 사이에 배치되고, 상기 가장자리로부터 이격되어 배치되며,
상기 제1 관통 홀과 상기 제2 관통 홀 사이에 버퍼 공간이 형성되고,
상기 버퍼 공간은 상기 기체 공급 채널의 중심으로부터 일정 간격 이격된 원주를 따라 연속으로 형성된 것을 특징으로 하는, 기판 처리 장치. - 청구항 12에 있어서,
상기 하부 공간에 배치된 기체 공급 플레이트; 및
상기 기체 공급 플레이트 상에 적층되며 상기 기체 공급 플레이트와 기계적으로 결합된 기체 채널을 더 포함하고,
상기 기체 채널과 상기 기체 공급 플레이트 사이에 기체 흐름 채널이 형성된 것을 특징으로 하는, 기판 처리 장치. - 청구항 12에 있어서,
적어도 하나의 RF 로드를 더 포함하며,
상기 RF 로드는 상기 기체 채널과 전기적으로 연결된 것을 특징으로 하는, 기판 처리 장치. - 청구항 14에 있어서,
상기 RF 로드는 상기 제1 격벽 중 상기 제2 격벽과 상기 제3 격벽 사이에 배치된 부분을 관통하도록 형성된 것을 특징으로 하는, 기판 처리 장치. - 청구항 12에 있어서,
상기 반응기 벽과 상기 제3 격벽 사이에 형성된 배기 통로; 및
상기 제1 격벽에 형성되며 상기 하부 공간과 상기 배기 통로를 연결하는 제3 관통 홀을 더 포함하는, 기판 처리 장치. - 삭제
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US15/802,154 US10934619B2 (en) | 2016-11-15 | 2017-11-02 | Gas supply unit and substrate processing apparatus including the gas supply unit |
TW106138119A TWI662640B (zh) | 2016-11-15 | 2017-11-03 | 氣體供應單元及包括氣體供應單元的基板處理裝置 |
CN201711120632.1A CN108070846B (zh) | 2016-11-15 | 2017-11-14 | 气体供应单元及包括气体供应单元的基板处理装置 |
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