JPS6138863A - 研磨装置 - Google Patents
研磨装置Info
- Publication number
- JPS6138863A JPS6138863A JP15722584A JP15722584A JPS6138863A JP S6138863 A JPS6138863 A JP S6138863A JP 15722584 A JP15722584 A JP 15722584A JP 15722584 A JP15722584 A JP 15722584A JP S6138863 A JPS6138863 A JP S6138863A
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- reference plate
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Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
め要約のデータは記録されません。
Description
【発明の詳細な説明】
〔発明の技術分野〕
本発明は、例えば半導体ウェハを鏡面加工する研摩装置
の改良に関する。
の改良に関する。
従来、例えば半導体ウェハを鏡面加工する装置としては
、回転加工台に貼着された研摩布に被加工物としての半
導体ウェハを押し付けること釦より加工するものが知ら
れている。しかし、この種の装置は、ウェハを研摩布に
機械的な力で強性的に押し付けることにより加工を行な
うものであるため、加工中にウェハに無理な力が印加さ
れて表面にスクラッチ等の損傷が発生し易い欠点がある
。
、回転加工台に貼着された研摩布に被加工物としての半
導体ウェハを押し付けること釦より加工するものが知ら
れている。しかし、この種の装置は、ウェハを研摩布に
機械的な力で強性的に押し付けることにより加工を行な
うものであるため、加工中にウェハに無理な力が印加さ
れて表面にスクラッチ等の損傷が発生し易い欠点がある
。
そこで、近年では、ウェハを加工台や研摩布に直接接触
させずに非接触で加工を行なう装置が提唱されておシ、
その−例として次のようなものが知られている。
させずに非接触で加工を行なう装置が提唱されておシ、
その−例として次のようなものが知られている。
(1)研摩布を貼着した加工台を高速で回転させ、この
時に発生する流体状砥粒の動圧によ)ウェハを研摩布表
面から浮上させて上記流体状砥粒の接触によし加工を行
なうもの。
時に発生する流体状砥粒の動圧によ)ウェハを研摩布表
面から浮上させて上記流体状砥粒の接触によし加工を行
なうもの。
(11)加工台表面に断面が鋸歯状をなす多数の溝を放
射状に設け、この加工台に流体状砥粒を供給して加工台
を回転させた際に生じる流体状砥粒の動圧によりウエハ
を加工台から浮上させ、加工を行表うもの。
射状に設け、この加工台に流体状砥粒を供給して加工台
を回転させた際に生じる流体状砥粒の動圧によりウエハ
を加工台から浮上させ、加工を行表うもの。
ところが、これらの非接触研摩装置は、それぞれ
(1)研摩布を貼着して流体状砥粒の動圧を得るもので
は、ウェハの浮上量が安定せず、またウェハが加工台か
ら均一に浮上し難いため、加工むらが生じ易い。
は、ウェハの浮上量が安定せず、またウェハが加工台か
ら均一に浮上し難いため、加工むらが生じ易い。
(It)加工台に多数の放射状溝を設けたもので娘、上
記(u)に比べてウェハの浮上状態を容易に制御し得る
が、加工台を回転しながらウェハの着脱をしないと加工
開始時や加工終了時におけるウェハが浮上していない状
態にな)、ウェハにスクラッチが発生し易く、このため
それ以上の歩留シ向上を望めない。
記(u)に比べてウェハの浮上状態を容易に制御し得る
が、加工台を回転しながらウェハの着脱をしないと加工
開始時や加工終了時におけるウェハが浮上していない状
態にな)、ウェハにスクラッチが発生し易く、このため
それ以上の歩留シ向上を望めない。
等の各種欠点があった。
本発明は、上記事情を参酌してなされたもので、損傷や
加工むらの発生を大幅に低減して、高品質かつ高歩留で
鏡面加工を行うことのできる研磨装置を提供することを
目的とする。
加工むらの発生を大幅に低減して、高品質かつ高歩留で
鏡面加工を行うことのできる研磨装置を提供することを
目的とする。
下面に被研磨物が装着されるリファレンスプレートが下
端部に連結された支持軸に強磁性体からなる第1の磁化
体を取付け、この第1の磁化体の直下に第2の磁化体を
支持軸から独立して配設−これら第1及び第2の磁化体
の外周部に複数の電磁石を対向させて、第1及び第2の
磁化体を同時に同極に磁化させるととにより反発力を発
生させ、この反発力によりリファレンスプレートを対向
している研磨盤から浮上させるとともに、このときのり
ファレンスプレートの浮上量を検出して、検出結果に基
づいて浮上量が一定となるように電磁石への給電量を調
節するようにしたものである。
端部に連結された支持軸に強磁性体からなる第1の磁化
体を取付け、この第1の磁化体の直下に第2の磁化体を
支持軸から独立して配設−これら第1及び第2の磁化体
の外周部に複数の電磁石を対向させて、第1及び第2の
磁化体を同時に同極に磁化させるととにより反発力を発
生させ、この反発力によりリファレンスプレートを対向
している研磨盤から浮上させるとともに、このときのり
ファレンスプレートの浮上量を検出して、検出結果に基
づいて浮上量が一定となるように電磁石への給電量を調
節するようにしたものである。
以下、本発明の一実施例を図面を参照して群述する。
第1図及び第2図紘、この実施例の研磨装置を示してい
る。この研磨装置は、非接触研磨加工を行う研磨部(1
)と、この研磨部(1)の一部をなすリファレンスプレ
ート(2)を磁気的に支持するリフ7レンスプレート支
持部(8)と、このリファレンスプレート支持部(8)
によりリファレンスプレート(2)の浮上量を検出する
浮上量検出部(4)と、この浮上量検出部(4)におけ
る検出結果に基づいてリファレンスプレート(2)の浮
上量を制御する浮上量制御部(6)とから構成されてい
る。しかして、上部研磨部(1)は研磨液(6)を収容
する容器(7)と、との容器(7)に格納され且つ研磨
液(6)中に浸漬されている円柱状の研磨盤(8)と、
この研磨盤(8)の底部に同軸に連結され且つ容器(D
の底板を液密に貫通している回転軸(9)と、研磨盤(
8)の上面に対してリファレンスプレート支持部(8)
により非接触で平行に対向するよりに配設された円柱状
のリファレンスグレート(2)トカらなっている。上記
研磨盤(8)は、金属製の本体軸と、この本体αOの上
面に装着された研磨布a1とからまっている。また研磨
液(6)は平均粒径が0.02μm11度のコpイダル
シリカと有機ア建ンとの混合液とからなる。さらに、リ
ファレンスプレート(2)のか径は、研磨盤(8)の半
径とほぼ等しいように設定されている。そして、このリ
ファレンスプレート(2)の軸線と研磨盤(8)の軸線
とは互に平行に設定され、かつリファレンスプレート(
2)の軸線は、研磨盤(8)の半径方向のほぼ中央位置
となるように設定されている。また、このリファレンス
プレート(2)は、研磨液(6)中に少なくとも下端部
分が浸漬するように設けられている。そうして、リファ
レンスプレート(2)の下面には、研磨加工を行うシリ
コン(Sl)ウェハυ・・が、例えばワックスなどの接
着剤により接着されている。一方、リファレンスプレー
ト支持部(8)は、リファレンスプレート(2)の上面
に同軸に連結された円柱状の支持軸(至)と、この支持
軸儂の両端部を軸支する軸受α◆、αΦと、この支持軸
0の上端部に同軸に取付けられた例えばFet Ni、
C6)あるいはこれらの合金等の強磁性体からなる第
1の円板(至)と、下端部側の軸受θゆと第1の円板0
Qとの間において支持軸(2)に同軸に遊挿された第2
の円板(t6と、これら第1の円板(至)及び第2:の
円板GOの外周部に同時に一定距離だけ離間して対向す
るように等配して4個設けられた電磁石αす・・・と、
第1の円板(ハ)と上端部側の軸受αゆとの間において
支持軸(至)に装着された支持軸03を回転駆動するモ
ータ(M)とからなっている。上記下端部側の軸受0Φ
は、支持軸03を同軸に囲繞するように容器(7)に固
設された円筒状の支持部材a8に内装されている。また
、第2の円板QQは、支持部材a→の上端部に取着され
ている。さらに、4個の電磁石α力の第1及び第2の円
板(至)、Oe側の磁極は同極同志が対向し、且つ異極
同志が隣接するように設定されている。まだ、モータ(
M)は、支持軸αeに巻装固定されたロータ(R)と、
このロータ(R)を同軸に囲繞するように図示せぬ円筒
体に固定されたステータ(8)とからなっている。つぎ
に、浮上量検出部(4)は、第1の円板(至)の上面外
周部に一定距離だけ離間して対向するように図示せぬ支
持体に取付けられた4個の非接触距離センサα譜・・・
と、この非接触距離センサaF・・からの検出信号を増
幅する増幅器翰・・・とからなっている。上記非接触セ
ン?(至)・・・は、第1の円板(ハ)の外周部に沿っ
て等配して設けられ、第1の円板00との距離つまhv
ファレンスプレート(2)と研磨盤(8)との間隙量を
検出するものである。そして、これら非接触距離センナ
(19−・・は、それぞれ例えばL HD (Ligh
t JlnissionDiode )などの発光器と
、この発光器から第1の光器における受光量により距離
検出を行うものである。すなわち、受光器における受光
量は、第1の円板QI19と各非接触距離センサα9・
・・との距離の増加に伴い直線的に減少することを利用
している。
る。この研磨装置は、非接触研磨加工を行う研磨部(1
)と、この研磨部(1)の一部をなすリファレンスプレ
ート(2)を磁気的に支持するリフ7レンスプレート支
持部(8)と、このリファレンスプレート支持部(8)
によりリファレンスプレート(2)の浮上量を検出する
浮上量検出部(4)と、この浮上量検出部(4)におけ
る検出結果に基づいてリファレンスプレート(2)の浮
上量を制御する浮上量制御部(6)とから構成されてい
る。しかして、上部研磨部(1)は研磨液(6)を収容
する容器(7)と、との容器(7)に格納され且つ研磨
液(6)中に浸漬されている円柱状の研磨盤(8)と、
この研磨盤(8)の底部に同軸に連結され且つ容器(D
の底板を液密に貫通している回転軸(9)と、研磨盤(
8)の上面に対してリファレンスプレート支持部(8)
により非接触で平行に対向するよりに配設された円柱状
のリファレンスグレート(2)トカらなっている。上記
研磨盤(8)は、金属製の本体軸と、この本体αOの上
面に装着された研磨布a1とからまっている。また研磨
液(6)は平均粒径が0.02μm11度のコpイダル
シリカと有機ア建ンとの混合液とからなる。さらに、リ
ファレンスプレート(2)のか径は、研磨盤(8)の半
径とほぼ等しいように設定されている。そして、このリ
ファレンスプレート(2)の軸線と研磨盤(8)の軸線
とは互に平行に設定され、かつリファレンスプレート(
2)の軸線は、研磨盤(8)の半径方向のほぼ中央位置
となるように設定されている。また、このリファレンス
プレート(2)は、研磨液(6)中に少なくとも下端部
分が浸漬するように設けられている。そうして、リファ
レンスプレート(2)の下面には、研磨加工を行うシリ
コン(Sl)ウェハυ・・が、例えばワックスなどの接
着剤により接着されている。一方、リファレンスプレー
ト支持部(8)は、リファレンスプレート(2)の上面
に同軸に連結された円柱状の支持軸(至)と、この支持
軸儂の両端部を軸支する軸受α◆、αΦと、この支持軸
0の上端部に同軸に取付けられた例えばFet Ni、
C6)あるいはこれらの合金等の強磁性体からなる第
1の円板(至)と、下端部側の軸受θゆと第1の円板0
Qとの間において支持軸(2)に同軸に遊挿された第2
の円板(t6と、これら第1の円板(至)及び第2:の
円板GOの外周部に同時に一定距離だけ離間して対向す
るように等配して4個設けられた電磁石αす・・・と、
第1の円板(ハ)と上端部側の軸受αゆとの間において
支持軸(至)に装着された支持軸03を回転駆動するモ
ータ(M)とからなっている。上記下端部側の軸受0Φ
は、支持軸03を同軸に囲繞するように容器(7)に固
設された円筒状の支持部材a8に内装されている。また
、第2の円板QQは、支持部材a→の上端部に取着され
ている。さらに、4個の電磁石α力の第1及び第2の円
板(至)、Oe側の磁極は同極同志が対向し、且つ異極
同志が隣接するように設定されている。まだ、モータ(
M)は、支持軸αeに巻装固定されたロータ(R)と、
このロータ(R)を同軸に囲繞するように図示せぬ円筒
体に固定されたステータ(8)とからなっている。つぎ
に、浮上量検出部(4)は、第1の円板(至)の上面外
周部に一定距離だけ離間して対向するように図示せぬ支
持体に取付けられた4個の非接触距離センサα譜・・・
と、この非接触距離センサaF・・からの検出信号を増
幅する増幅器翰・・・とからなっている。上記非接触セ
ン?(至)・・・は、第1の円板(ハ)の外周部に沿っ
て等配して設けられ、第1の円板00との距離つまhv
ファレンスプレート(2)と研磨盤(8)との間隙量を
検出するものである。そして、これら非接触距離センナ
(19−・・は、それぞれ例えばL HD (Ligh
t JlnissionDiode )などの発光器と
、この発光器から第1の光器における受光量により距離
検出を行うものである。すなわち、受光器における受光
量は、第1の円板QI19と各非接触距離センサα9・
・・との距離の増加に伴い直線的に減少することを利用
している。
さらに、浮上量制御部(5)は、例えばフィクロコンピ
ュータなどを主体とするものであって、増幅器(イ)・
・・の出力側に接続されているとともに、給電回路(財
)・・・を介して電磁石αη・・・の入力側に接続され
ている。そして、各非接触距離センサ0・・・による距
離検出結果に基づいて、各非接触距離センサQ9・・・
と第1の円板(ト)とが所望の値になるように、電磁石
a’h・・・への給電量を調節するようになっている。
ュータなどを主体とするものであって、増幅器(イ)・
・・の出力側に接続されているとともに、給電回路(財
)・・・を介して電磁石αη・・・の入力側に接続され
ている。そして、各非接触距離センサ0・・・による距
離検出結果に基づいて、各非接触距離センサQ9・・・
と第1の円板(ト)とが所望の値になるように、電磁石
a’h・・・への給電量を調節するようになっている。
しかして、上記構成の研磨装置において、まず浮上量制
御部(5)により、電磁石(ロ)・・・に給電する。
御部(5)により、電磁石(ロ)・・・に給電する。
その結果、各電磁石α力・・・の内側は、S極、N極、
S <M、N極というように、S極とN極とに交互に磁
化される。とれら電磁石αり・・・に対向している第1
及び第2の円板(ト)、 (113の外周部は、対向し
ている電磁石α力・・・の磁石に対して異極となるよう
に磁化される。すなわち、電磁石Q71が8極であれば
、第1及び第2の円板α載aeの対向部分は、両者とも
N極に磁化される(第1図参照)。すると、第1及び第
2の円板(1,08の対向部分は、同極に磁化されるの
で両者間には反発力が発生する。この反発力により第1
の円板0Q及びこの第1の円板0啼に一体的に連結され
ている支持軸αJ及びSi ウェハ■・・・が接着さ
れているリファレンスプレート(2)は、上方に浮上し
、84 ウェハ(6)・・・と研磨布Ql)との間に
は間隙が生じる。このとき、非接触距離センサ09・・
・からは、第1の円板01i1と各非接触距離センサα
9・・・との距離を示す検出信号S D + 、 S
D 2 、 S D s 。
S <M、N極というように、S極とN極とに交互に磁
化される。とれら電磁石αり・・・に対向している第1
及び第2の円板(ト)、 (113の外周部は、対向し
ている電磁石α力・・・の磁石に対して異極となるよう
に磁化される。すなわち、電磁石Q71が8極であれば
、第1及び第2の円板α載aeの対向部分は、両者とも
N極に磁化される(第1図参照)。すると、第1及び第
2の円板(1,08の対向部分は、同極に磁化されるの
で両者間には反発力が発生する。この反発力により第1
の円板0Q及びこの第1の円板0啼に一体的に連結され
ている支持軸αJ及びSi ウェハ■・・・が接着さ
れているリファレンスプレート(2)は、上方に浮上し
、84 ウェハ(6)・・・と研磨布Ql)との間に
は間隙が生じる。このとき、非接触距離センサ09・・
・からは、第1の円板01i1と各非接触距離センサα
9・・・との距離を示す検出信号S D + 、 S
D 2 、 S D s 。
8D4が増幅器に)・・・を介して浮上量制御部(5)
に出力される。この浮上量制御部(5)には、あらかじ
め別りエハ■・・・と研磨布Iとの間隙が所定値、例え
ば5μmとなるときの非接触距離センサα9・・・と第
1の円板Q蹄との距離である基準値が設定されていて、
仁の基準値と検出信号SDI、 8D2. SDI、
SDaが比較され、両者間に有意差がある場合には、こ
の有意差を解消させるように、電磁石αり・・・への給
電量の微調整が行われる。このようなフィードバック(
peed back)制御は、研磨中継続して行われる
。
に出力される。この浮上量制御部(5)には、あらかじ
め別りエハ■・・・と研磨布Iとの間隙が所定値、例え
ば5μmとなるときの非接触距離センサα9・・・と第
1の円板Q蹄との距離である基準値が設定されていて、
仁の基準値と検出信号SDI、 8D2. SDI、
SDaが比較され、両者間に有意差がある場合には、こ
の有意差を解消させるように、電磁石αり・・・への給
電量の微調整が行われる。このようなフィードバック(
peed back)制御は、研磨中継続して行われる
。
かくして、Sl ウニ・・(6)・・・と研磨布αの
とが所定の間隙をおいて対向する状態になると、回転駆
動機構を起動して、研磨盤(8)を回転させる。すると
、研磨盤(8)上面の研磨液(6)は、遠心力により中
心から外周部に向って流れる。この研磨液(6)の流れ
はSl ウェハ(6)・・・と研磨布α℃との間隙を
通過し、Siウェハ03・・・が均一に加工され、表面
が平坦化する。
とが所定の間隙をおいて対向する状態になると、回転駆
動機構を起動して、研磨盤(8)を回転させる。すると
、研磨盤(8)上面の研磨液(6)は、遠心力により中
心から外周部に向って流れる。この研磨液(6)の流れ
はSl ウェハ(6)・・・と研磨布α℃との間隙を
通過し、Siウェハ03・・・が均一に加工され、表面
が平坦化する。
このように、本実施例の研磨装置は、81 ウェハ■
・・・が接着されたリファレンスプレート(2)を磁気
的に浮上させ、且つ8五 ウエノ・(2)・・・と研磨
盤(8)との間隙が常に一定となるようにフィードバッ
ク制御するようにしているので、高精度かつ高品質の研
磨加工が可能となる。しかも、加工中、終始一貫して研
磨盤(8)に対して非接触支持する仁とができるので、
例えばスクラッチなどの損傷の発生が皆無となシ、歩留
が向上する。
・・・が接着されたリファレンスプレート(2)を磁気
的に浮上させ、且つ8五 ウエノ・(2)・・・と研磨
盤(8)との間隙が常に一定となるようにフィードバッ
ク制御するようにしているので、高精度かつ高品質の研
磨加工が可能となる。しかも、加工中、終始一貫して研
磨盤(8)に対して非接触支持する仁とができるので、
例えばスクラッチなどの損傷の発生が皆無となシ、歩留
が向上する。
なお、支持軸α3を軸支する軸受の数及び位置は任意に
設定してよい。また、第1及び第2の円板Qの、 08
0着設位置も上端部でなく支持軸0の中途部でもよい、
さらに、非接触距離センナの代〕に例えば差動変圧器を
利用した接触型の距離センサを用いてもよい。検出個所
は1個所でもよく、その場所は、す7アレンスプレート
(2)の上面、第1の円板(ト)の中心等任意位置でも
よい。また、Kl及び第2の円板(ハ)、 CIoのよ
うに必ずしも円板でな′くともよく、要するに、近接か
つ同極に磁化可能であればどのような形状でもよい。さ
らに、電磁石Q針・・の数についても、偶数個であるな
らば任意数でよい。
設定してよい。また、第1及び第2の円板Qの、 08
0着設位置も上端部でなく支持軸0の中途部でもよい、
さらに、非接触距離センナの代〕に例えば差動変圧器を
利用した接触型の距離センサを用いてもよい。検出個所
は1個所でもよく、その場所は、す7アレンスプレート
(2)の上面、第1の円板(ト)の中心等任意位置でも
よい。また、Kl及び第2の円板(ハ)、 CIoのよ
うに必ずしも円板でな′くともよく、要するに、近接か
つ同極に磁化可能であればどのような形状でもよい。さ
らに、電磁石Q針・・の数についても、偶数個であるな
らば任意数でよい。
本発明の研磨装置は、ウェハが接着されたリファレンス
プレートを磁気的に支持するとともに、ウェハと研磨盤
との間隙が常に一定となるようにフィードバック制御す
るようにしているので、間隙を通過する研磨液によりウ
エハをむらなく均一に非接触研磨するととができ、高精
度かつ高品質のウェハを得ることができる。
プレートを磁気的に支持するとともに、ウェハと研磨盤
との間隙が常に一定となるようにフィードバック制御す
るようにしているので、間隙を通過する研磨液によりウ
エハをむらなく均一に非接触研磨するととができ、高精
度かつ高品質のウェハを得ることができる。
第1図は本発明の一実施例の研磨装置の要部を切欠して
示す正面図、第2図は第1図の要部平面図である。 (1):研磨部、 (2) :リファレンスブレー)
、 (8) :リファレンスプレート支持部、 (4)
:浮上量検出部。 (5):浮上量制御部、 (6):研磨液、(7):容
器、 (8) :研磨m、03:シリコンウエハ(被研
磨瞼)、α3:支持軸、Q4:軸受、aυg第1の円板
(第1の磁化体)、αe:第2の円板(第2の磁化体)
、Q7):電磁石、(M):モータ(回転駆動機構)代
理人 弁理士 則 近 憲 佑 (#1か1名) 第1図 R摩郁
示す正面図、第2図は第1図の要部平面図である。 (1):研磨部、 (2) :リファレンスブレー)
、 (8) :リファレンスプレート支持部、 (4)
:浮上量検出部。 (5):浮上量制御部、 (6):研磨液、(7):容
器、 (8) :研磨m、03:シリコンウエハ(被研
磨瞼)、α3:支持軸、Q4:軸受、aυg第1の円板
(第1の磁化体)、αe:第2の円板(第2の磁化体)
、Q7):電磁石、(M):モータ(回転駆動機構)代
理人 弁理士 則 近 憲 佑 (#1か1名) 第1図 R摩郁
Claims (1)
- 【特許請求の範囲】 下記構成を具備することを特徴とする研磨装置。 (イ)研磨液が収納される容器と、この容器内の研磨液
中に浸漬される研磨盤と、この研磨盤を回転駆動する回
転駆動機構と、被研磨物が装着される主面が上記研磨盤
の上面に平行に対向して配設され少なくとも上記主面を
含む部分が上記研磨液に浸漬されるリファレンスプレー
トとからなる研磨部。 (ロ)下端部に上記リファレンスプレートが連結された
支持軸と、この支持軸を軸方向に進退自在に支持する軸
受と、上記支持軸に固着された強磁性金属板からなる第
1の磁化体と、この第1の磁化体の下方位置にて上記第
1の磁化体に近接かつ対向して上記支持軸からは独立し
て固設された強磁性金属板からなる第2の磁化体と、上
記第1の磁化体の外周部及び上記第2の磁化体の外周部
に同軸に対向して配設された複数の電磁石とを有し、上
記電磁石への給電により上記第1の磁化体及び上記第2
の磁化体の上記電磁石対向部位を互に同極に磁化させ、
このとき上記第1の磁化体及び上記第2の磁化体との間
に発生した反発力により上記リファレンスプレートを上
記定盤から浮上させるリファレンスプレート支持部。 (ハ)上記リファレンスプレート支持部による上記リフ
ァレンスプレートの浮上量を検出して電気信号に変換す
る浮上量検出部。 (ニ)上記浮上量検出部から出力された電気信号に基づ
いて上記電磁石への給電量を調節し上記リファレンスプ
レートの浮上量を一定に保持する浮上量制御部。
Priority Applications (1)
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JP15722584A JPS6138863A (ja) | 1984-07-30 | 1984-07-30 | 研磨装置 |
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Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15722584A JPS6138863A (ja) | 1984-07-30 | 1984-07-30 | 研磨装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6138863A true JPS6138863A (ja) | 1986-02-24 |
Family
ID=15644957
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Application Number | Title | Priority Date | Filing Date |
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JP15722584A Pending JPS6138863A (ja) | 1984-07-30 | 1984-07-30 | 研磨装置 |
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JP (1) | JPS6138863A (ja) |
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