US10770336B2 - Substrate lift mechanism and reactor including same - Google Patents
Substrate lift mechanism and reactor including same Download PDFInfo
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- US10770336B2 US10770336B2 US15/672,096 US201715672096A US10770336B2 US 10770336 B2 US10770336 B2 US 10770336B2 US 201715672096 A US201715672096 A US 201715672096A US 10770336 B2 US10770336 B2 US 10770336B2
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- susceptor
- lift pin
- substrate
- support
- reactor
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- 239000000758 substrate Substances 0.000 title claims abstract description 111
- 230000007246 mechanism Effects 0.000 title claims description 33
- 238000012545 processing Methods 0.000 claims abstract description 41
- 238000012546 transfer Methods 0.000 claims abstract description 32
- 238000006243 chemical reaction Methods 0.000 claims description 43
- 238000000034 method Methods 0.000 claims description 31
- 230000008569 process Effects 0.000 claims description 17
- 230000002093 peripheral effect Effects 0.000 claims description 11
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 10
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 9
- 239000010453 quartz Substances 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 6
- 229910002804 graphite Inorganic materials 0.000 claims description 6
- 239000010439 graphite Substances 0.000 claims description 6
- 229910003465 moissanite Inorganic materials 0.000 claims 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 229910021397 glassy carbon Inorganic materials 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 230000000717 retained effect Effects 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
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- C—CHEMISTRY; METALLURGY
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
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- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/08—Reaction chambers; Selection of materials therefor
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- C—CHEMISTRY; METALLURGY
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- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/12—Substrate holders or susceptors
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- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32733—Means for moving the material to be treated
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- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
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- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
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- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
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- H01J2237/32—Processing objects by plasma generation
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- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
Definitions
- the disclosure generally relates to apparatus for gas-phase processes. More particularly, exemplary embodiments of the present disclosure relate to a reactor including a common substrate transfer and processing region and to a substrate lift mechanism suitable for use therein.
- Gas-phase reactors for processing substrates often include a susceptor within a reaction chamber. During processing, one or more substrates are placed within the reaction chamber and onto the susceptor using a robotic arm. After processing, the substrate(s) are removed from the surface of the susceptor and through an opening in the reaction chamber using the robotic arm.
- a relatively small reaction space allows for more-efficient substrate processing. For example, a smaller amount of reactants can be used when processing substrates in a relatively small reaction space—compared to a larger reaction space and/or an amount of time to process substrates using the relatively small reaction space can be less than the amount of time to process substrates in the larger reaction space.
- a reaction chamber often includes a separate wafer transfer region that includes the opening within the reaction chamber to allow placement on and removal of the substrates from the susceptor.
- a substrate can be placed onto the susceptor by placing (lowering) the susceptor to be within the substrate transfer region of the reaction chamber, causing the lift pins to rise above the surface of the susceptor, placing the substrate onto the lift pins, and lowering the lift pins, such that the substrate rests on the susceptor.
- the susceptor and the substrate can then be moved (raised) to a processing position, such that the substrate is within the reaction region of the reaction chamber.
- reactors employing such techniques can exhibit undesired gas flow between the reaction region and the substrate transfer region—especially during substrate processing. The undesired gas flow can lead to deposition and/or corrosion of the reactor within the substrate transfer region.
- the volumes of such reactors are relatively large to accommodate both the processing/reaction region and the substrate transfer region of the reaction chamber.
- the multi-step process of moving the susceptor to a transfer region and moving the lift pins is a relatively time consuming. Accordingly, improved mechanisms and techniques for transferring and processing substrates are desired.
- Various embodiments of the present disclosure provide an improved method and apparatus for processing and transferring substrates.
- various systems and methods provide a reactor and/or use a method that can process substrates within a region and transfer substrates to/from the same region within a reactor.
- the reactor can include a reaction chamber including a common processing and transfer region. Accordingly, the overall reactor volume can be relatively small, the reactor can be less complex, more reliable, less expensive, and easier to maintain and/or process substrates in a reduced amount of time and/or in a less expensive manner.
- a reactor which includes a common substrate processing and transfer region, includes a reaction chamber comprising a reaction region, a susceptor having a top surface within the reaction region, and a substrate lift mechanism.
- the substrate lift mechanism can include at least one lift pin, a lift pin support member that engages to (e.g., removably) couple to the at least one pin, and a movable shaft coupled to the lift pin support member.
- the substrate lift mechanism causes the at least one lift pin to extend above the susceptor surface.
- the moveable shaft moves in a vertical direction.
- the distance that the movable shaft and the lift pins move during a substrate transfer process can range from about 5 mm to about 25 mm, about 10 mm to about 20 mm, or be about 17 mm.
- the susceptor includes a center region and a peripheral region. A width of the center region can be greater than a width of the peripheral region. Such a design can facilitate forming the susceptor with a relatively small peripheral width, which in turn can facilitate use of the common region for both substrate processing and transfer.
- the reactor can further include a rotatable shaft and a susceptor support coupled to the rotatable shaft. The susceptor is coupled to the susceptor support, such that rotational movement of the rotatable shaft is translated to the susceptor.
- an opening within the reaction chamber, to transfer substrates into and out of the reaction chamber resides above a top surface of the susceptor when the susceptor is in a processing position.
- a substrate support assembly includes a susceptor, a susceptor support coupled to the susceptor, a rotatable shaft coupled to the susceptor support, a lift pin support member, one or more lift pins coupled to the lift pin support member, a moveable shaft coupled to the lift pin support member, a lift pin mechanism to cause the moveable shaft to move in a vertical direction, and a susceptor rotation mechanism that causes the susceptor to rotate during substrate processing.
- the substrate support assembly can be configured, such that the susceptor does not move in a vertical direction during a substrate transfer process.
- the susceptor support includes a plurality of susceptor support arms and one or more susceptor support structures coupled to each susceptor support arm.
- the susceptor arm(s) can include an aperture to receive one of the one or more lift pins.
- the susceptor can be the same or similar to the susceptor described above and elsewhere in this specification.
- a method of transferring and processing a substrate includes the steps of providing a reactor comprising a common region for substrate processing and substrate transfer, providing a substrate support assembly, such as the assembly described above and elsewhere in this specification, providing a substrate to the common region, moving the lift pins in a downward position to place the substrate in a processing position, processing the substrate, moving the lift pins in an upward position, and removing the substrate from the common region.
- the method can include removing the substrate from the common region through an opening that is located above a top surface of the susceptor—e.g., when the susceptor is in a processing position.
- FIG. 1 illustrates a reactor in accordance with exemplary embodiments of the disclosure.
- FIG. 2 illustrates components of a substrate support assembly in accordance with additional embodiments of the disclosure.
- FIGS. 3-5 illustrate a lift/rotate mechanism in accordance with exemplary embodiments of the disclosure.
- any ranges indicated in this disclosure may include or exclude the endpoints. Additionally, any values of variables indicated (regardless of whether they are indicated with “about” or not) may refer to precise values or approximate values and include equivalents, and may refer to average, median, representative, majority, or the like.
- Reactor 100 includes a reaction chamber 102 including a reaction region 104 and a substrate lift mechanism 106 .
- substrate lift mechanism 106 facilitates placement of a substrate 116 onto a top surface 122 of a susceptor 118 within reaction region 104 to allow removal of substrate 116 through an opening 120 of reaction chamber 102 .
- Reaction chamber 102 can be formed of, for example, quartz, and can be formed as a unitary piece, such as a tube.
- reaction region 104 within reaction chamber 102 can have a rectangular cross section having a width of about 350 mm to about 450 mm (or be about ⁇ 420 mm), a length of about 400 mm to about 800 mm (or be about ⁇ 760 mm), and a height of about 20 mm to about 40 mm (or be about ⁇ 30 mm).
- reaction chamber 102 includes an opening 120 that resides above top surface 122 of susceptor 118 (e.g., when surface 122 is in a processing position).
- Reaction chamber 102 can be suitable for a variety of applications, such as film (e.g., epitaxial) deposition processes, etch processes, cleaning processing, and the like. Further, reactor 100 can be a standalone reactor or form part of a cluster tool that may include similar or different reaction chambers.
- Substrate lift mechanism 106 includes at least one lift pin 108 , 110 , a lift pin support member 112 that can engage with and couple to the at least one pin 108 , 110 , and a movable shaft 114 mechanically coupled to the lift pin support member. During a substrate transfer process, substrate lift mechanism 106 causes the at least one lift pin 108 , 110 to be raised or lowered to allow placement of substrate 116 onto surface 122 and/or removal of substrate 116 from surface 122 .
- Lift pins 108 , 110 can be formed of any suitable material.
- lift pins 108 , 110 can be formed of silicon carbide (SiC), SiC-coated graphite, quartz, or glassy carbon.
- SiC silicon carbide
- quartz quartz
- glassy carbon Although two lift pins 108 , 110 are shown in FIG. 1 , reactor 100 includes three (e.g., equally) spaced apart lift pins. Reactors in accordance with other embodiments of the disclosure can include any suitable number of lift pins and generally include three or three or more lift pins.
- a length L of lift pins 108 , 110 can vary according to application.
- a length of lift pins 108 , 110 allows lift pins 108 , 110 to extend through a width W of susceptor 118 and above the susceptor top surface 122 —for example, when receiving a substrate 116 from a robotic arm (not illustrated) or presenting substrate 116 to be received by the robotic arm.
- lift pins 108 , 110 have a length L of about 20 to about 40 mm or about 30 mm. This is a significantly shorter length than typical lift pins and allows processing and substrate transfer within a common region, namely reaction region 104 .
- Lift pins 108 , 110 can include a beveled section 124 that is received within a portion of susceptor 118 . Beveled section 124 allows lift pins 108 , 110 to be received within a via 126 within susceptor 118 and to be retained at a desired level (e.g., a top surface of lift pins can be about planar with surface 122 or reside just (e.g., a few mm or less) below surface 122 .
- a top surface 128 , 130 of lift pins 108 , 110 can have a diameter of about 3 to about 6 mm, or about 4 mm.
- Top surface 128 , 130 can be polished to a smooth finish (e.g., a roughness average of about 0.05 to 0.2 ⁇ m or less) to prevent or mitigate surface damage to substrate 116 during a transfer process.
- Lift pin support member 112 engages with lift pins 108 , 110 and moveable shaft 114 .
- lift pin support member 112 removably engages with lift pins 108 , 110 and is coupled to moveable shaft 114 .
- Lift pin support member 112 can be formed of, for example, SiC-coated graphite, quartz, or glassy carbon.
- lift pin support member 112 includes a plurality of lift pin arms 202 , 204 . Although two lift pin support arms are illustrated in FIG. 2 , the illustrated lift pin support member includes three lift pin support arms. Each lift pin support arm 202 , 204 includes a first end 206 , 208 coupled moveable shaft 114 and a second end 210 , 212 that receive and engage with a lift pin (e.g., one or lift pins 108 , 110 ). Second end 210 , 212 can include, for example, a recess 214 , 216 to receive a bottom portion 218 , 220 of one or lift pins 108 , 110 .
- Lift pin support member 112 can be a unitary member, as illustrated. Alternatively, lift pin support member can include a plurality of arms coupled to a coupling that is coupled to moveable shaft 114 .
- FIG. 1 illustrates lift pins 108 , 110 when engaged with lift pin support member 112 , such that lift pin support member 112 engages with lift pins 108 , 110 and causes top surface 128 , 130 of lift pins 108 , 110 to reside above surface 122 .
- FIG. 2 illustrates lift pin support member 112 , when lift pin support member 112 is disengaged from lift pins 108 , 110 —i.e., when moveable shaft 114 is moved in a downward position relative to the position of moveable shaft 114 in FIG. 1 . As illustrated in FIG.
- Moveable shaft 114 is in the form of a hollow tube.
- Moveable shaft 114 can be formed of, for example, quartz.
- moveable shaft is configured to move a vertical distance of 5 to about 25 mm (or ⁇ 17 mm).
- lift pins 108 , 110 can move about 5 to about 25 mm (or ⁇ 17 mm), and lift pins 108 , can extend to a height of up to about 5, 10, or 20 mm above surface 122 .
- Susceptor 118 can be formed of, for example, SiC or SiC-coated graphite.
- width W of susceptor 118 is relatively small to allow lift pin-assisted substrate transfer and processing in a single region—e.g., reaction region 104 .
- a width W of susceptor 118 at a peripheral region 222 is less than a width of susceptor 118 at a center region 224 of susceptor 118 .
- This configuration can allow from a relatively thin susceptor—especially at the peripheral region—while allowing susceptor to rotate and perform other functions, such as protecting an end of a thermocouple and providing desired heat transfer to and/or from substrate 116 .
- the width at peripheral region 222 ranges from about 3 to about 6.5 mm (or ⁇ 3.8 mm).
- a width of center region 224 can range from about 6 to about 10 mm (or ⁇ 6.4 mm).
- reactor 100 can be configured to cause substrate 116 to rotate during substrate processing.
- reactor 100 includes a rotatable shaft 132 and a susceptor support 134 to cause susceptor 118 , and consequently substrate 116 , to rotate during processing.
- Rotatable shaft 132 can be formed of, for example, quartz. Rotatable shaft 132 can be configured to couple to susceptor support 134 to translate rotational movement of rotatable shaft 132 to susceptor support 134 . By way of example, rotatable shaft 132 can be coupled to susceptor support 134 using a coupling 148 .
- susceptor support 134 includes one or more (e.g., a plurality of) susceptor support arms 226 , 228 and structures 136 , 138 .
- Structures 136 , 138 can engage with susceptor 118 and susceptor support arms 226 , 228 .
- structures 136 , 138 can be integrally formed with susceptor support arms 226 , 228 .
- Susceptor support arms 226 , 228 and structures 136 , 138 can be formed of, for example, SiC, SiC-coated graphite, or quartz.
- susceptor support 134 can include a plurality of structures 136 , 138 for each susceptor support arm 226 , 228 .
- at least one of the plurality of susceptor support arms 226 , 228 includes an aperture 140 , 142 to receive a lift pin.
- Reactor 100 can also include a thermocouple 144 .
- Thermocouple 144 can be used to measure a temperature of susceptor 118 —for example—during substrate processing.
- thermocouple 144 can include an end 146 , which extends through moveable shaft and rotatable shaft. End 146 can reside within center region 224 of susceptor 118 . Center region 224 may provide additional radiation shielding for end 146 of thermocouple 144 .
- a substrate support assembly 230 includes components to cause lift pins 108 , 110 to raise and lower and to cause susceptor 118 to rotate.
- substrate support assembly 230 includes susceptor 118 , susceptor support 134 , rotatable shaft 132 , lift pin support member 112 , one or more lift pins 108 , 110 , moveable shaft 114 , a lift pin mechanism to cause the moveable shaft to move in a vertical direction during a substrate transfer process, and a susceptor rotation mechanism that causes susceptor 118 to rotate during substrate processing.
- susceptor 118 does not move in a vertical direction during substrate transfer—i.e., susceptor 118 does not move in a vertical direction as lift pins are raised and/or lowered and/or during other steps of a substrate transfer process.
- the lift pin mechanism and the susceptor rotation mechanism can be combined.
- FIGS. 3-5 illustrate a lift/rotate mechanism 300 in accordance with exemplary embodiments of the disclosure.
- Lift/rotate mechanism 300 can be used to raise and lower lift pins (e.g., lift pins 108 , 110 ) and to cause a susceptor (e.g., susceptor 118 ) to rotate.
- FIG. 3 illustrates a rear isometric view of lift/rotate mechanism 300
- FIG. 4 illustrates a front isometric view of lift/rotate mechanism 300
- FIG. 5 illustrates a simplified cross-sectional-view of lift/rotate mechanism 300 .
- lift/rotate mechanism 300 includes a susceptor rotary actuator 302 , a pin lift actuator 304 , a rotary signal junction bracket, a tubulation seal 308 , a tubulation seal support 310 , a susceptor manual actuator 312 , a thermocouple signal rotary junction 314 , and a mounting bracket 316 .
- Susceptor rotary actuator 302 is used to provide rotational movement to a susceptor, such as susceptor 118 .
- susceptor rotary actuator 302 is configured to provide rotational movement to rotatable shaft 132 to cause susceptor 118 to rotate—e.g., during processing of a substrate—using rotational drive gear 512 .
- Exemplary rotational speed can range from about 5 rpm to about 150 rpm, about 10 rpm to about 50 rpm, or be about 35 rpm.
- Pin lift actuator 304 is configured to cause lift pins (e.g., lift pins 108 , 110 ) to move in a vertical direction.
- pin lift actuator 304 causes a pin lift carriage 502 to move vertically along a linear slide rail 504 .
- Carriage 502 is mechanically coupled to moveable shaft 114 (e.g., using a pin lift shaft mounting sleeve 506 ) to cause lift pins (e.g., by way of lift pin support member 112 ) to move in a vertical direction.
- Pin lift shaft mounting sleeve 506 and moveable shaft 114 can be protected from the environment using an upper bellows 508 and a lower bellows 510 .
- Rotary signal junction box 306 can be used to facilitate provision of signals to and/or from susceptor rotary actuator 302 , pin lift linear actuator 304 , and/or one or more thermocouples, such as thermocouple 144 .
- Tubulation seal 308 and a tubulation seal support 310 are used to provide a seal about moveable shaft 114 .
- tubulation seal 308 can include a seal 514 and a support plate 516 to retain seal 514 as moveable shaft 114 moves relative to seal 308 .
- susceptor manual actuator 312 can be used to manually move a susceptor (e.g., susceptor 118 ) in a vertical direction via a susceptor lift carriage 518 .
- lift/rotate mechanism 300 includes a relatively large feedthrough 520 (e.g., having a diameter of about 20 to about 50 mm or be about 34.5 mm), which allows installation of moveable shaft 114 , through a rotary feedthrough 522 and a susceptor shaft mounting sleeve 524 , from below.
- a configuration of lift/rotate mechanism 300 is relatively compact, compared to lift/rotate mechanism that cause a susceptor to move vertically during a substrate transfer process.
- a method of transferring and processing a substrate can employ the reactor, substrate support assembly, and/or lift/rotate mechanism as described herein.
- An exemplary method includes the steps of providing a reactor comprising a common region for substrate processing and substrate transfer, providing a substrate support assembly, providing a substrate to the common region, moving the lift pins in a downward position to place the substrate in a processing position, processing the substrate, moving the lift pins in an upward position, and removing the substrate from the common region.
- the step of removing the substrate can include removing the substrate from the common region through an opening in a reaction or processing region that is above a top surface of the susceptor.
Abstract
Description
Claims (16)
Priority Applications (6)
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US15/672,096 US10770336B2 (en) | 2017-08-08 | 2017-08-08 | Substrate lift mechanism and reactor including same |
KR1020180074731A KR102583935B1 (en) | 2017-08-08 | 2018-06-28 | Substrate lift mechanism and reactor including same |
CN201810696644.7A CN109390199B (en) | 2017-08-08 | 2018-06-28 | Substrate lifting mechanism and reactor comprising same |
JP2018134645A JP7274268B2 (en) | 2017-08-08 | 2018-07-18 | SUBSTRATE LIFT MECHANISM AND REACTOR INCLUDING THE SAME |
US16/944,271 US11587821B2 (en) | 2017-08-08 | 2020-07-31 | Substrate lift mechanism and reactor including same |
US18/100,660 US20230163019A1 (en) | 2017-08-08 | 2023-01-24 | Substrate lift mechanism and reactor including same |
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US15/672,096 US10770336B2 (en) | 2017-08-08 | 2017-08-08 | Substrate lift mechanism and reactor including same |
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US18/100,660 Pending US20230163019A1 (en) | 2017-08-08 | 2023-01-24 | Substrate lift mechanism and reactor including same |
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US18/100,660 Pending US20230163019A1 (en) | 2017-08-08 | 2023-01-24 | Substrate lift mechanism and reactor including same |
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JP7274268B2 (en) | 2023-05-16 |
KR20190016433A (en) | 2019-02-18 |
KR102583935B1 (en) | 2023-09-27 |
US11587821B2 (en) | 2023-02-21 |
CN109390199A (en) | 2019-02-26 |
US20190051555A1 (en) | 2019-02-14 |
CN109390199B (en) | 2023-10-03 |
JP2019036717A (en) | 2019-03-07 |
US20230163019A1 (en) | 2023-05-25 |
US20200365444A1 (en) | 2020-11-19 |
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