CN1563483A - Bilayer inlet gas spray nozzle in use for metal-organic chemical vapor deposition device - Google Patents
Bilayer inlet gas spray nozzle in use for metal-organic chemical vapor deposition device Download PDFInfo
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- CN1563483A CN1563483A CN 200410017471 CN200410017471A CN1563483A CN 1563483 A CN1563483 A CN 1563483A CN 200410017471 CN200410017471 CN 200410017471 CN 200410017471 A CN200410017471 A CN 200410017471A CN 1563483 A CN1563483 A CN 1563483A
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- last
- escape pipe
- following
- inlet
- chamber
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- 239000007921 spray Substances 0.000 title claims description 10
- 238000005229 chemical vapour deposition Methods 0.000 title claims description 9
- 239000002184 metal Substances 0.000 claims abstract description 8
- 238000001816 cooling Methods 0.000 claims abstract description 7
- 239000000498 cooling water Substances 0.000 claims description 8
- 238000007789 sealing Methods 0.000 claims description 4
- 239000007789 gas Substances 0.000 abstract description 20
- 239000000758 substrate Substances 0.000 abstract description 8
- 239000000126 substance Substances 0.000 abstract description 2
- 239000012495 reaction gas Substances 0.000 abstract 1
- 239000000376 reactant Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- Chemical Vapour Deposition (AREA)
Abstract
This invention discloses a two-layer gas inlet blow head of a metal organic chemical gas phase deposit device including a closed shell having an upper gas inlet cavity and a lower gas inlet cavity, an upper escape pipe communicating with the upper gas cavity and reaction chamber is set between the upper-middle and the base plate and a lower escape pipe communicating with a lower gas inlet cavity and the reaction chamber is set between the lower plate and base plate characterizing that diameter of the lower escape pipe is layer than the upper and the upper is put in the lower. A cooling cavity is designed, the first reaction gas enters into the reaction chamber at the substrate surface from the upper and lower escape pipes separately.
Description
Technical field
The present invention relates to shower nozzle, especially relate to a kind of double-deck air inlet spray head that is used for metal organic chemical vapor deposition equipment (CVD).
Background technology
With metal organic chemical vapor deposition equipment (MOCVD) preparation semiconductor film material the time, differential responses gas need be sent into reaction chamber respectively, then that reactant gases is even at the substrate surface thorough mixing, pre-reaction when making material preparation simultaneously reduces, thereby improves the relevant performance of material.Be used for all having designed in the double-deck air inlet spray head of chemical vapor depsotition equipment inlet chamber and the following inlet chamber gone up spaced apart from each other at present, differential responses gas enters reaction chamber through last escape pipe and following escape pipe respectively, because last escape pipe and following escape pipe are spaced, thereby there is following shortcoming: because the tube spacing between last escape pipe and the following escape pipe is from far away, gas is difficult for mixing fully with even, so only be fit to low-pressure growth in two pipes.
Summary of the invention
The object of the present invention is to provide and a kind ofly differential responses gas can be sent into reaction chamber respectively, make the reactant gases thorough mixing evenly, reduce the double-deck air inlet spray head that is used for metal organic chemical vapor deposition equipment of pre-reaction.
The object of the present invention is achieved like this: the body skin that the present invention includes enclosed shape, la m and following la m on the body skin internal fixing has, forming inlet chamber between top board and the last la m, inlet chamber under forming between last la m and the following la m, be equipped with on the sidewall of body skin be communicated with last inlet chamber on inlet pipe, the lower inlet duct that is communicated with following inlet chamber, between last la m and base plate, be equipped be communicated with last inlet chamber and reaction chamber on escape pipe, between following la m and base plate, the following escape pipe that is communicated with following inlet chamber and reaction chamber is installed, feature is the diameter of the diameter of escape pipe down greater than last escape pipe, and upward escape pipe is positioned over down in the escape pipe.
Being cooling chamber between la m and the base plate down, cooling water inlet pipe and cooling water outlet pipe are installed on the sidewall of body skin.
The present invention will go up escape pipe to be positioned over escape pipe down on routine is used for the double-deck air inlet spray head basis of metal organic chemical vapor deposition equipment, first via reactant gases just can enter inlet chamber from last inlet pipe like this, enter reaction chamber through last escape pipe then, arrive substrate surface, the second road reactant gases just can enter down inlet chamber from lower inlet duct, the gap between escape pipe and the last escape pipe enters reaction chamber under the warp then, arrive substrate surface, differential responses gas is sent into reaction chamber respectively thereby reached, make reactant gases in all even purpose that reduces pre-reaction of substrate surface environs thorough mixing.The present invention also designs the cooling chamber that is useful on the cooling baseplate temp.Therefore the present invention has following advantage: 1, differential responses gas can be sent into reaction chamber respectively, make the reactant gases thorough mixing evenly, reduce pre-reaction; 2, the two-way air-flow sprays from one than the zonule simultaneously, distributes spray orifice more intensive easily on equal area, thereby improves homogeneity; 3, go up escape pipe and can be designed to, so just be convenient to very much clean with the activity form of last la m from the top taking-up; 4, processing is easy, the yield rate height, thus manufacturing cost is lower.5, this shower nozzle is applicable to normal pressure and low-pressure growth technology.
Description of drawings
Fig. 1 is a cross-sectional schematic of the present invention;
Fig. 2 is that the A-A of Fig. 1 is to vertical view.
Embodiment
Below in conjunction with embodiment and contrast accompanying drawing the present invention is described in further detail.
The present invention includes the body skin 1 of enclosed shape, la m 4 and following la m 5 on body skin 1 internal fixing has, inlet chamber 2 in formation sealing between top board 3 and the last la m 4, between last la m 4 and following la m 5, form the following inlet chamber 9 of sealing, be equipped with on the sidewall 14 of body skin 1 be communicated with last inlet chamber 2 on inlet pipe 17, the lower inlet duct 16 that is communicated with following inlet chamber 9, between last la m 4 and base plate 6, be equipped be communicated with last inlet chamber 2 and reaction chamber 13 on escape pipe 7, between following la m 5 and base plate 6, the following escape pipe 8 that is communicated with following inlet chamber 9 and reaction chamber 13 is installed, the diameter of following escape pipe 8 is greater than the diameter of last escape pipe 7, and upward escape pipe 7 is positioned over down in the escape pipe 8.
Being cooling chamber 12 between la m 5 and the base plate 6 down, cooling water inlet pipe 15 and cooling water outlet pipe 11 are installed on the sidewall 14 of body skin 1.
First via reactant gases can enter inlet chamber 2 from last inlet pipe 17, enter reaction chamber 13 through last escape pipe 7 then, arrive substrate 10 surfaces, the second road reactant gases can enter down inlet chamber 9 from lower inlet duct 16, the gap between escape pipe 8 and the last escape pipe 7 enters reaction chamber 13 under the warp then, arrives substrate 10 surfaces.Water coolant enters cooling chamber 12 from cooling water inlet pipe 15, takes away by substrate 10 and pedestal thereof and passes to the heat that base plate 6 reaches last escape pipe 7, following escape pipe 8, flows out from cooling water outlet pipe 11 then.
Claims (2)
1, a kind of double-deck air inlet spray head that is used for metal organic chemical vapor deposition equipment, the body skin (1) that comprises enclosed shape, at body skin (1) internal fixing last la m (4) and following la m (5) are arranged, between top board (3) and last la m (4), form the last inlet chamber (2) of sealing, between last la m (4) and following la m (5), form the following inlet chamber (9) of sealing, the last inlet pipe (17) that is communicated with last inlet chamber (2) is installed on the sidewall (14) of body skin (1), the lower inlet duct (16) that is communicated with following inlet chamber (9), between last la m (4) and base plate (6), the last escape pipe (7) that is communicated with last inlet chamber (2) and reaction chamber (13) is installed, between following la m (5) and base plate (6), the following escape pipe (8) that is communicated with following inlet chamber (9) and reaction chamber (13) is installed, it is characterized in that: the diameter of following escape pipe (8) is greater than the diameter of last escape pipe (7), and upward escape pipe (7) is positioned over down in the escape pipe (8).
2, the double-deck air inlet spray head that is used for metal organic chemical vapor deposition equipment as claimed in claim 1, it is characterized in that:, cooling water inlet pipe (15) and cooling water outlet pipe (11) are installed on the sidewall (14) of body skin (1) being cooling chamber (12) between la m (5) and the base plate (6) down.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200410017471 CN1292092C (en) | 2004-04-01 | 2004-04-01 | Bilayer inlet gas spray nozzle in use for metal-organic chemical vapor deposition device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200410017471 CN1292092C (en) | 2004-04-01 | 2004-04-01 | Bilayer inlet gas spray nozzle in use for metal-organic chemical vapor deposition device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1563483A true CN1563483A (en) | 2005-01-12 |
| CN1292092C CN1292092C (en) | 2006-12-27 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200410017471 Expired - Lifetime CN1292092C (en) | 2004-04-01 | 2004-04-01 | Bilayer inlet gas spray nozzle in use for metal-organic chemical vapor deposition device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1292092C (en) |
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