CN102230165A - Spray header structure for chemical vapor deposition epitaxial equipment - Google Patents
Spray header structure for chemical vapor deposition epitaxial equipment Download PDFInfo
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- CN102230165A CN102230165A CN2011101621477A CN201110162147A CN102230165A CN 102230165 A CN102230165 A CN 102230165A CN 2011101621477 A CN2011101621477 A CN 2011101621477A CN 201110162147 A CN201110162147 A CN 201110162147A CN 102230165 A CN102230165 A CN 102230165A
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Abstract
The invention relates to a spray header structure for chemical vapor deposition epitaxial equipment. The spray header structure comprises an upper gas inlet layer, at least one middle gas inlet layer and a lower cooling layer, wherein the upper gas inlet layer, the middle gas inlet layer and the lower cooling layer are arranged in a laminated way; an upper-layer gas inlet groove is formed in the upper gas inlet layer and communicated with at least one upper-layer inlet pipe and at least one upper-layer outlet pipe; the upper end of the upper-layer outlet pipe is communicated with the upper-layer gas inlet groove while the lower end of the upper-layer outlet pipe vertically penetrates through the middle gas inlet layer and the cooling layer; a middle gas inlet groove is formed in the middle gas inlet layer and communicated with at least one middle inlet pipe and at least one middle outlet pipe; the upper end of the first outlet pipe is communicated with the middle gas inlet groove while the lower end of the first outlet pipe vertically penetrates through the cooling layer; the middle outlet pipe is coaxially sleeved on the corresponding upper-layer outlet pipe; and an annular clearance is reserved between the upper-layer outlet pipe and the middle outlet pipe. The spray header structure for the chemical vapor deposition epitaxial equipment, provided by the invention, has the advantages of simple machining process, convenience for assembling, disassembling and maintenance and completeness in washing; and by using the spray header structure, pre-reaction can be suppressed while gas intake evenness is realized and reliable hardware support can be provided to various chemical vapor deposition processes.
Description
Technical field
The present invention relates to a kind of chemical vapour deposition epitaxial device, be specifically related to the showerhead configuration that a kind of chemical vapour deposition epitaxial device is used.
Background technology
Chemical vapour deposition (Chemical Vapour Deposition, be called for short CVD) be the method for a kind of thin film deposition of growing up mid-term in last century, be after mixing by gas chemical reaction to take place under certain conditions, and deposit the technology of thin film at substrate surface.In being widely used in fields such as microelectronics, photoelectron and hard plated film now.
With chemical gaseous phase depositing process deposit film material, need various starting material usually and be written into gas, starting material comprise the material composition that participates in chemical reaction and form the film product; Carrier gas comprises the various raw-material gases that carry, and as hydrogen, nitrogen etc., these carrier gas only are written into starting material and enter reaction chamber, and itself does not participate in chemical reaction.
The CVD film deposition process all comprises following steps: (1) carrier gas is being carried reactant and is being flowed to reactor outlet from Reactor inlet, and this main air stream flows and is subjected to the strong influence that the temperature difference, runner expansion, substrate rotation etc. cause; (2) main air stream forms three kinds of frictional belt that are parallel to substrate above substrate; The internal reaction thing is heated in the frictional belt, decomposes, gas-phase chemical reaction such as displacement the formation reaction intermediate product; (3) reactant or reaction intermediates penetrate the frictional belt and arrive substrate surface by convection current and concentration diffusion; (4) reactant adsorbs at substrate surface, again by surface diffusion, be incorporated into surface reaction steps such as lattice and finish thin film deposition; (5) reactant and byproduct of reaction are at surface desorption; (6) byproduct of reaction after the desorb by convection current and concentration diffusion, is got back to main air stream again, finally is brought to outside the reaction chamber.In the CVD reaction process, surface chemical reaction speed transports speed much larger than reactant usually, so growth for Thin Film speed depends on that the reactant of molecular weight maximum is transported to the speed on surface; On the other hand, the reactant concn that the component of film growth and thickness depend primarily on the substrate top distributes and temperature distribution, the i.e. no matter speed or the quality of film growth, all intensive is subjected to the influence of gas transport process, therefore claims to be grown to the reaction of transport process control.
One of important indicator of film preparation is exactly the homogeneity of its thickness, doping content and component.Grow the uniform thin-film material of thickness, doping content and component, can know: must make the reactant concn that reaches substrate and the speed uniformity of trying one's best according to the reaction mechanism of CVD technology.This just requires to have equally distributed airflow field, temperature field and concentration field near the substrate surface.Requirement such as even according to the needed component of above-mentioned CVD growing film, that thickness is even, must above substrate, provide a thin thickness and uniform reactant concn frictional belt, make the reaction particle of q.s arrive the substrate surface each point continuously by diffusion.Because when in process of growth, only being transported to the reaction particle at each position of substrate and doping particle speed and all equating, could satisfy the requirement of component, concentration and the thickness evenness of film.The reactant concn frictional belt is influenced by the gas mobile consumingly, so the substrate top also needs to keep a thin thickness and the even velocity frictional belt.The flow field of velocity boundary layer should remain even parallel laminar flow, avoids any fluctuation, turbulent flow and convection current vortex.
For guaranteeing stable boundary layer thickness, people have designed different CVD reactor apparatus.The air-flow of forming according to the reactant gases that enters reactor and carrier gas can be divided into two big classes to the CVD reactor with respect to the flow direction of substrate: main air stream is parallel to the horizontal reactor of substrate direction and the main air stream rectilinear reactor perpendicular to the substrate direction.In horizontal reactor, to opposite side, this structure of reactor is simple from substrate one effluent for reactant gases, but has problems such as serious reactant depletion and thermal convection vortex, cause the front and back ununiformity of film thickness easily, need be overcome with the method for complexity.If the homogeneity of semiconductor film material is poor, then should adopt rectilinear reactor.Rectilinear reactor mainly partly is made up of air inlet spray head, substrate bracket, rotation system, heater block, vacuum system etc.For the in enormous quantities of the production that improves the epitaxial semiconductor thin-film material and the stability of producing, the main method that can adopt has: the one, and the rotating speed of increasing substrate bracket, shorten the time of flow of feed gas to the high temperature substrate holder, reduce the heated time of unstripped gas in transport process, but rev up can influence the mass transfer and the heat transfer process of deposition reaction, increase the control difficulty of substrate top laminar flow stability greatly, be unfavorable for film growth because of unstability produces eddy current easily; The 2nd, adopt different unstripped gas to feed reaction chamber uniformly by different pipelines, the artificial air inlet that makes reaches uniformity.But there is defective in the diffuser of existing this structure, and spray header is difficult to clean, and the dirt settling after causing cleaning on the diffuser pollutes the material of subsequent preparation, has influenced the quality and the performance of material.Simultaneously, existing spray header adopts the mode of welding mostly, is not easy to dismounting and maintenance, when serious even can influence cooling water channel, causes drainage.
Summary of the invention
The showerhead configuration that the object of the present invention is to provide a kind of chemical vapour deposition epitaxial device to use, its evenly air inlet suppress pre-reaction simultaneously, be easy to again that processing is cleaned, dismounting is safeguarded, thereby overcome deficiency of the prior art.
For achieving the above object, the present invention has adopted following technical scheme:
The showerhead configuration that a kind of chemical vapour deposition epitaxial device is used is characterized in that: it comprises the upper strata air inlet layer of stacked setting, at least one middle air inlet layer and lower floor's cooling layer;
Wherein, be provided with the upper strata air inlet duct in the described upper strata air inlet layer, this upper strata air inlet duct is communicated with at least one upper strata inlet pipe and at least one upper strata outlet pipe, and described upper strata outlet pipe upper end is communicated with the upper strata air inlet duct, and the lower end is by vertical passing in middle air inlet layer and the lower floor cooling layer;
Air inlet duct in the middle of being provided with in the air inlet layer in the middle of described, this centre air inlet duct is communicated with at least one middle inlet pipe and at least one central exit pipe, and described first outlet pipe upper end is communicated with middle air inlet duct, and the lower end is by vertically passing in lower floor's cooling layer;
Described central exit pipe is coaxial to be sheathed on the corresponding upper outlet pipe, and leaves the circular clearance between this upper strata outlet pipe and this central exit pipe.
As a kind of preferred version, described showerhead configuration comprises the two-layer above middle air inlet layer of stacked setting, be arranged in the coaxial corresponding central exit pipe that is sheathed on the middle air inlet layer that is positioned at the below of central exit pipe of the middle air inlet layer of top in the middle of wherein adjacent two in the air inlet layer, and leave the circular clearance between these two central exit pipes.
As another preferred version, be provided with locating structure between described upper strata air inlet layer, middle air inlet layer and the lower floor's cooling layer, described locating structure comprises projection and the groove structure that cooperatively interacts.
Be provided with sealing flume in the described cooling layer, this tank is communicated with at least one water-in and at least one water outlet, and described upper strata outlet pipe and central exit pipe are by passing in the described tank.
Also be equipped with sealing-ring between described upper strata air inlet layer, middle air inlet layer and the lower floor's cooling layer.
Described showerhead configuration also comprises the base flange that is arranged at bottom.
Be provided with locating structure and sealing-ring between described base flange and the cooling water layer, described locating structure comprises projection and the groove structure that cooperatively interacts.
Be distributed with the through hole that can pass on the described base flange for the central exit pipe of air inlet layer in the middle of the orlop, and the lower surface of all upper strata outlet pipes and central exit pipe all with the concordant setting in the lower surface of base flange.
Be provided with metal o-ring between the central exit pipe of air inlet layer in the middle of described base flange and the orlop.
A plurality of upper stratas outlet pipe of described upper strata air inlet layer and the structure that a plurality of central exit pipes of air inlet layer all adopt equidistantly, evenly arrange in the middle of each.
At deficiency of the prior art, this case contriver is through studying for a long period of time and putting into practice, technical scheme of the present invention has been proposed, generalized saying, this technical scheme have following characteristics, have water-cooling system that is:, each reactant gases is separated, can air inlet number of plies amount be set according to the real reaction gaseous species, the gas intake type is annular nesting structure, has guaranteed the homogeneity and the repeatability of air inlet; Because project organization has complete symmetry, this spray header size can infinitely enlarge, and can satisfy the requirement of extensive growth.
The principle of work of showerhead configuration of the present invention is roughly as follows: in the time of the epitaxial material growth, different types of reaction source gas enters separately air inlet duct from different inlet pipe, outlet pipe through the even solid matter in below sprays into reaction chamber then, actual injection form is: the source gas that enters from upper strata air inlet layer is the ejection of pipe face, the source gas that feeds from middle air inlet layer is enclosed the ring exit ejection that forms by outlet pipe, promptly spray into reaction chamber from ring surface, by regulating the caliber size of the outlet pipe of respectively organizing nested, concentric, the density of arranging, and in reaction chamber, be aided with of the measures such as distance of adjusting spray header, thereby realize the uniformity of material growth and component to substrate.
Compared with prior art, the present invention has following advantage at least: need not welding processing, be tightly connected and hard syndeton and adopt, so processing is simple, easy accessibility, clean thoroughly, can there be the existing incident all problems that is difficult to safeguard of spray header, can be all kinds of chemical vapor deposition methods hardware supported is provided, guarantee the high homogeneity and the stability of growth.
Description of drawings
Fig. 1 is the structural representation of a preferred embodiment of the present invention;
Each assembly and Reference numeral thereof are respectively among the figure: inlet pipe 1, air inlet duct 2, outlet pipe 3, outlet pipe 4, outlet pipe 5, upper cover plate air inlet layer 6, middle air inlet layer 7, base flange 8, locating slot 9, inlet pipe 10, air inlet duct 11, cooling water layer 12, water-in 13, tank 14, water outlet 15, inwall 16.
Embodiment
Of the present inventionly be used for the spray header that the chemical vapour deposition epitaxial device uses and be made up of a plurality of air inlet layers, each air inlet layer all has the solid matter outlet pipe of similar number, and the outlet pipe of each layer is in full accord in the distribution of spray header card.The outlet pipe caliber increases from top to bottom successively.Need not welding between each air inlet layer flange, the locating slot fixed position is arranged, and be connected with screw by the O-ring seal sealing.The form that outlet pipe with each air inlet layer like this is nested, concentric is fixed on the base flange, identical through hole of arranging is arranged on this base flange, and be tightly connected with reaction chamber.When work, multiple different reactant gases can pass through the various inlet layer, escape pipe fascicle through the solid matter nested, concentric, highly symmetric spraying in the reaction chamber, in the inhomogeneity while that guarantees air inlet, owing to separate each unstripped gas, avoid the generation of pre-reaction again, improved film forming quality.
Below in conjunction with an accompanying drawing and a preferred embodiment technical scheme of the present invention is elaborated.
Consult Fig. 1, the spray header that this chemical vapour deposition epitaxial device is used comprises the above middle air inlet layer 7 of upper cover plate air inlet layer 6, one deck of stacked setting, cooling water layer 12 and base flange 8.
Wherein, upper cover plate air inlet layer 6 constitutes by an inlet pipe 1 with the identical shaped air inlet duct that is embedded in it 2 of spray header and the outlet pipe 3 of some amount and certain-length.Upper cover plate air inlet layer and middle air inlet layer 7 are tightly connected together by O-ring seal by locating slot 9 location.
Middle air inlet layer is made of the outlet pipe of inlet pipe and air inlet duct and correspondence equally, this outlet pipe is bigger than the outlet pipe caliber of upper cover plate air inlet layer, pipe range will be lacked, and has concavo-convex hard contact (structure of projection and groove fit) to be connected in the locating slot and guarantees that two outlet pipes are nested, concentric.
The number of middle air inlet layer is decided by needs, and by locating slot 9 location, O-ring seal is tightly connected between each middle layer.The structure of air inlet layer is basic identical in the middle of each, and just the caliber of outlet pipe increases from top to bottom successively, and pipe range reduces successively.For example, for present embodiment, middle air inlet layer can be two-layer, wherein, middle air inlet layer 7 above being positioned at is made of the outlet pipe 4 of inlet pipe 10 and air inlet duct 11 and correspondence, and the middle air inlet layer that is positioned at the below then is made of the outlet pipe 5 of inlet pipe and air inlet duct and correspondence.Cooling water layer 12 is arranged at middle air inlet layer below in the end, and it is the plate of a band through hole, and water coolant enters 14 pairs of spray headers of tank from water-in 13 and cools off, and is flowed out by water outlet 15 again.There are inwall 16 parcels the closed region of aforementioned tank 14 for removing above-mentioned outlet caliber through hole, outlet pipe.Cool off water layer and levels tight joint together, to guarantee the refrigerative effect.
The outlet caliber through hole of the same size that the middle air inlet layer of last one deck is arranged on the base flange 8 of the lowest layer because of near the substrate radiating surface, advises using the metal o-ring sealing herein.By the locating slot location, O-ring seal is tightly connected equally for base flange and the cooling water layer on it.The outlet pipe exit end face of aforesaid upper cover plate air inlet layer and each middle air inlet layer is all parallel with base flange bottom surface herein.More than these parts connect by screw, form whole showerhead configuration, need not weldprocedure.
For verifying the performance of aforementioned showerhead configuration, this case contriver changes the spray header of original commercial MOCVD reactor (ThomasSwan CCS 3 * 2 ") into newly-designed showerhead configuration.This diffuser has comprised a upper cover plate air inlet layer, two middle air inlet layers and a chassis flange.Spray header is a right cylinder, external diameter 164mm; The outlet pipe jeting area covers the entire substrate holder, and external diameter is 140mm.The outlet pipe internal diameter of upper cover plate air inlet layer is 0.5mm, and the outlet pipe internal diameter of the first middle air inlet layer is 1.7mm, and the outlet pipe internal diameter of the second middle air inlet layer is 2.7mm, and the thickness of pipe of outlet pipe all is 0.2mm.China and foreign countries are three layers in having in each nested outlet pipe group, and interior for round tube sprays, spray for ring pipe China and foreign countries.The outlet pipe group is equidistantly closely arranged, and the density of arranging in whole outlet pipe jeting area is 30/square inch.
Come growing aluminum nitride (AlN) film with the reactor of having equipped newly-designed spray header, reactant gases trimethyl aluminium (TMAl) carries feeding from upper cover plate air inlet layer by carrier gas, reactant gases ammonia (NH
3) feed from the second middle air inlet layer, the air inlet layer is walked carrier gas in the middle of first, its effect is except the total flux of conditioned reaction gas, also spatially played the effect of isolating two kinds of reactant gasess, trimethyl aluminium and ammonia are independently transported in the process near substrate separately, in the process of being heated, suppress the generation of pre-reaction and parasitic reaction, reduced adverse reaction product or intermediate product and introduced film.Processing parameters such as the height by the conditioned reaction chamber, pallet rotating speed, aluminium nitride film thickness evenness＜+-1% that we obtain, X-ray diffraction half-breadth (002 face)＜200 seconds, the defect concentration of the film that visible growth obtains is greatly diminished.
Each parts of diffuser can deposit reactant in the life-time service, and as in nozzle area, even the parasitic deposition that also has in the air inlet duct in various degree exists.Each parts are pulled down, put into the washing lotion ultrasonic cleaning that is made into by deionized water, hydrogen peroxide and phosphoric acid 24 hours, all exist sedimental surface to clean up, oven dry then, reinstall the sealing-ring that renews, leak detection back examination growing gallium nitride (GaN) thin-film material.This moment, the flat mode in the spray header was: reactant gases trimethyl-gallium (TMGa) from upper cover plate air inlet layer by carrier gas H
2Carry feeding, reactant gases ammonia (NH
3) feed the logical carrier gas H of the first middle air inlet layer from the second middle air inlet layer
2The mass ratio of the gallium nitride film that grows is higher, and the background carrier concentration reaches＜1.0E+17/cm
3
Compare with existing spray header, the outstanding feature of this diffuser need not welding exactly, mostly is to be tightly connected and hard syndeton.So simple, the easy accessibility of its processing cleans thoroughly, can not have the existing incident all problems that is difficult to safeguard of spray header, can be all kinds of chemical vapor deposition methods hardware supported is provided, and guarantees the high homogeneity and the stability of growth.
It is pointed out that the foregoing description only is explanation technical conceive of the present invention and characteristics, its purpose is to allow the personage who is familiar with this technology can understand content of the present invention and enforcement according to this, can not limit protection scope of the present invention with this.All equivalences that spirit is done according to the present invention change or modify, and all should be encompassed within protection scope of the present invention.
Claims (10)
1. showerhead configuration that the chemical vapour deposition epitaxial device is used is characterized in that: it comprise stacked setting upper strata air inlet layer, at least one in the middle of air inlet layer and lower floor's cooling water layer;
Wherein, be provided with the upper strata air inlet duct in the described upper strata air inlet layer, this upper strata air inlet duct is communicated with at least one upper strata inlet pipe and at least one upper strata outlet pipe, and described upper strata outlet pipe upper end is communicated with the upper strata air inlet duct, and the lower end is by vertical passing in middle air inlet layer and the lower floor cooling layer;
Air inlet duct in the middle of being provided with in the air inlet layer in the middle of described, this centre air inlet duct is communicated with at least one middle inlet pipe and at least one central exit pipe, and described first outlet pipe upper end is communicated with middle air inlet duct, and the lower end is by vertically passing in lower floor's cooling layer;
Described central exit pipe is coaxial to be sheathed on the corresponding upper outlet pipe, and leaves the circular clearance between this upper strata outlet pipe and this central exit pipe.
2. the showerhead configuration that chemical vapour deposition epitaxial device as claimed in claim 1 is used, it is characterized in that: described showerhead configuration comprises the two-layer above middle air inlet layer of stacked setting, be arranged in the coaxial corresponding central exit pipe that is sheathed on the middle air inlet layer that is positioned at the below of central exit pipe of the middle air inlet layer of top in the middle of wherein adjacent two in the air inlet layer, and leave the circular clearance between these two central exit pipes.
3. the showerhead configuration that chemical vapour deposition epitaxial device as claimed in claim 1 is used, it is characterized in that: be provided with sealing flume in the described cooling layer, this tank is communicated with at least one water-in and at least one water outlet, and described upper strata outlet pipe and central exit pipe are by passing in the described tank.
4. the showerhead configuration that chemical vapour deposition epitaxial device as claimed in claim 1 is used, it is characterized in that: be provided with locating structure between described upper strata air inlet layer, middle air inlet layer and the lower floor's cooling layer, described locating structure comprises projection and the groove structure that cooperatively interacts.
5. the showerhead configuration of using as claim 1 or 4 described chemical vapour deposition epitaxial devices is characterized in that: also be equipped with sealing-ring between described upper strata air inlet layer, middle air inlet layer and the lower floor's cooling layer.
6. the showerhead configuration that chemical vapour deposition epitaxial device as claimed in claim 1 is used is characterized in that: described showerhead configuration also comprises the base flange that is arranged at bottom.
7. the showerhead configuration that chemical vapour deposition epitaxial device as claimed in claim 6 is used is characterized in that: be provided with locating structure and sealing-ring between described base flange and the cooling water layer, described locating structure comprises projection and the groove structure that cooperatively interacts.
8. the showerhead configuration that chemical vapour deposition epitaxial device as claimed in claim 6 is used, it is characterized in that: be distributed with the through hole that can pass on the described base flange for the central exit pipe of air inlet layer in the middle of the orlop, and the lower surface of all upper strata outlet pipes and central exit pipe all with the concordant setting in the lower surface of base flange.
9. the showerhead configuration that chemical vapour deposition epitaxial device as claimed in claim 8 is used is characterized in that: be provided with metal o-ring between the central exit pipe of air inlet layer in the middle of described base flange and the orlop.
10. the showerhead configuration that chemical vapour deposition epitaxial device as claimed in claim 1 is used is characterized in that: a plurality of upper stratas outlet pipe of described upper strata air inlet layer and the structure that a plurality of central exit pipes of air inlet layer all adopt equidistantly, evenly arrange in the middle of each.
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| Application Number | Priority Date | Filing Date | Title |
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| CN2011101621477A CN102230165A (en) | 2011-06-16 | 2011-06-16 | Spray header structure for chemical vapor deposition epitaxial equipment |
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| CN2011101621477A CN102230165A (en) | 2011-06-16 | 2011-06-16 | Spray header structure for chemical vapor deposition epitaxial equipment |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102424956A (en) * | 2011-12-02 | 2012-04-25 | 彭继忠 | Spraying apparatus for metal-organic chemical vapor deposition equipment |
| CN103074601A (en) * | 2012-01-21 | 2013-05-01 | 光达光电设备科技（嘉兴）有限公司 | Spray head used in chemical vapor deposition process |
| CN103132139A (en) * | 2013-03-07 | 2013-06-05 | 光达光电设备科技（嘉兴）有限公司 | Epitaxial deposition equipment, spray header and manufacturing method of spray header |
| CN103361634A (en) * | 2013-07-31 | 2013-10-23 | 光垒光电科技（上海）有限公司 | Gas inlet device |
| CN105256369A (en) * | 2015-10-20 | 2016-01-20 | 中国电子科技集团公司第四十八研究所 | High-temperature-resistant horizontal multi-layer gas inlet device for SiC epitaxy |
| CN108531886A (en) * | 2017-03-01 | 2018-09-14 | 广东昭信半导体装备制造有限公司 | A kind of detachable chemical vapor deposition spray equipment |
| CN111519161A (en) * | 2019-09-29 | 2020-08-11 | 江苏微导纳米科技股份有限公司 | Vacuum coating process chamber and vacuum suspension coating machine with same |
| CN115029775A (en) * | 2021-03-05 | 2022-09-09 | 中国电子科技集团公司第四十八研究所 | Epitaxial growth equipment with gas flowing horizontally |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040040502A1 (en) * | 2002-08-29 | 2004-03-04 | Micron Technology, Inc. | Micromachines for delivering precursors and gases for film deposition |
| CN1563483A (en) * | 2004-04-01 | 2005-01-12 | 南昌大学 | Bilayer inlet gas spray nozzle in use for metal-organic chemical vapor deposition device |
| CN201626981U (en) * | 2009-09-02 | 2010-11-10 | 中国科学院半导体研究所 | Gas inlet device of chemical vapor phase deposition epitaxy equipment |
-
2011
- 2011-06-16 CN CN2011101621477A patent/CN102230165A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040040502A1 (en) * | 2002-08-29 | 2004-03-04 | Micron Technology, Inc. | Micromachines for delivering precursors and gases for film deposition |
| CN1563483A (en) * | 2004-04-01 | 2005-01-12 | 南昌大学 | Bilayer inlet gas spray nozzle in use for metal-organic chemical vapor deposition device |
| CN201626981U (en) * | 2009-09-02 | 2010-11-10 | 中国科学院半导体研究所 | Gas inlet device of chemical vapor phase deposition epitaxy equipment |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102424956A (en) * | 2011-12-02 | 2012-04-25 | 彭继忠 | Spraying apparatus for metal-organic chemical vapor deposition equipment |
| CN103074601A (en) * | 2012-01-21 | 2013-05-01 | 光达光电设备科技（嘉兴）有限公司 | Spray head used in chemical vapor deposition process |
| CN103132139A (en) * | 2013-03-07 | 2013-06-05 | 光达光电设备科技（嘉兴）有限公司 | Epitaxial deposition equipment, spray header and manufacturing method of spray header |
| CN103361634A (en) * | 2013-07-31 | 2013-10-23 | 光垒光电科技（上海）有限公司 | Gas inlet device |
| CN105256369A (en) * | 2015-10-20 | 2016-01-20 | 中国电子科技集团公司第四十八研究所 | High-temperature-resistant horizontal multi-layer gas inlet device for SiC epitaxy |
| CN108531886A (en) * | 2017-03-01 | 2018-09-14 | 广东昭信半导体装备制造有限公司 | A kind of detachable chemical vapor deposition spray equipment |
| CN108531886B (en) * | 2017-03-01 | 2020-09-25 | 广东众元半导体科技有限公司 | Detachable chemical vapor deposition spray set |
| CN111519161A (en) * | 2019-09-29 | 2020-08-11 | 江苏微导纳米科技股份有限公司 | Vacuum coating process chamber and vacuum suspension coating machine with same |
| CN115029775A (en) * | 2021-03-05 | 2022-09-09 | 中国电子科技集团公司第四十八研究所 | Epitaxial growth equipment with gas flowing horizontally |
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Application publication date: 20111102 |