CN103774115B - Chemical vapor deposition unit - Google Patents
Chemical vapor deposition unit Download PDFInfo
- Publication number
- CN103774115B CN103774115B CN201210396302.6A CN201210396302A CN103774115B CN 103774115 B CN103774115 B CN 103774115B CN 201210396302 A CN201210396302 A CN 201210396302A CN 103774115 B CN103774115 B CN 103774115B
- Authority
- CN
- China
- Prior art keywords
- gas
- vapor deposition
- chemical vapor
- deposition unit
- distribution plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Chemical Vapour Deposition (AREA)
Abstract
The present invention relates to a kind of chemical vapor deposition unit.The chemical vapor deposition unit includes reaction chamber, spray assemblies at the top of reaction chamber and the pedestal being oppositely arranged with the spray assemblies, the pedestal can rotate relative to the spray assemblies, the spray assemblies include the first air inlet pipeline and the second air inlet pipeline, for first gas and second gas to be transferred into gas distribution plate respectively, the gas distribution plate has the deflation area towards the pedestal, the deflation area has some grooves, to house gas and installing plate part, the board member has some ventholes, the venthole is arranged in several columns, the venthole arrangement position part of at least two row is staggered in the several columns, the venthole is discharging the one or more in the first gas or second gas.The chemical vapor deposition unit of the present invention is simple in construction, and manufacturing cost is relatively low, and is easy to split cleaning.
Description
Technical field
The present invention relates to chemical vapour deposition technique field, more particularly to a kind of chemical vapor deposition unit.
Background technology
Chemical vapor deposition (Chemical vapor deposition, abbreviation CVD) is reactive material under gaseous condition
Chemically reacting, generation solid matter is deposited on the solid matrix surface of heating, and then the technology of solid material is made,
It is achieved by chemical vapor deposition unit.Specifically, reacting gas is passed through reative cell by CVD device by inlet duct
In, and controlling the reaction conditions such as the pressure of reative cell, temperature so that reacting gas reacts, so as to complete depositing operation step
Suddenly.In order to deposit required film, generally require and a variety of different reacting gas are passed through into reative cell, and also need to reative cell
In be passed through other nonreactive gas such as carrier gas or purge gas, therefore need in CVD device to set multiple inlet ducts.Below
It is with metal organic chemical vapor deposition (Metal Organic Chemical Vapor Deposition, MOCVD) device
Example, introduce the CVD device for including multiple inlet ducts in the prior art.
MOCVD is mainly used in the iii-vs such as gallium nitride, GaAs, indium phosphide, zinc oxide, II-VI group compound and alloy
Thin layer monocrystalline functional structure material preparation, constantly expand with the application of above-mentioned functional structure material, MOCVD devices
Have become one of important device of chemical vapor deposition unit.MOCVD is typically with II races or III metal organic source and VI races
Or V races hydride source etc. is used as reacting gas, by the use of hydrogen or nitrogen as carrier gas, carried out in a manner of pyrolysis on substrate
Vapor phase epitaxial growth, so as to grow various II-VI compound semiconductors, Group III-V compound semiconductor and theirs is polynary
The thin layer monocrystal material of solid solution.Due to II races or III metal organic source and VI races or the transmission conditions of V race's hydride source
It is different, it is therefore desirable to by different inlet ducts respectively by II races or III metal organic source and VI races or V race's hydride
Transmit to surface in source.
MOCVD devices of the prior art generally comprise：
Reaction chamber；
Spray assemblies at the top of the reaction chamber, the spray assemblies include two inlet ducts, it is described two enter
Device of air respectively transmits II races or III metal organic source and VI races or V race's hydride source to surface；
The pedestal being oppositely arranged with the spray assemblies, the pedestal have a heating unit, the pedestal be used to support and
Heat substrate.
The spray assemblies are divided into vertical according to the difference of the flow direction of the air-flow opposing substrate of the reacting gas provided
Straight and horizontal.Horizontal spray assemblies refer to that the spray assemblies cause the air-flow edge of reacting gas parallel to the water of substrate
Square to flowing；Rectilinear spray assemblies refer to that the spray assemblies cause the air-flow of reacting gas along perpendicular to the vertical of substrate
Flow in direction.Compared with horizontal spray assemblies, rectilinear spray assemblies can produce two-dimensional axial symmetric flowing, suppress thermal convection current whirlpool
Rotation, forms more uniform speed, temperature and concentration boundary layer, so as to obtain more preferable thin film deposition in surface respectively.
Referring to Fig. 1, Fig. 1 is a kind of cross-sectional view of MOCVD devices of prior art.It is described setting with it is described
Spray assemblies at the top of MOCVD devices include the first air inlet pipeline 37 and the second air inlet pipeline 47 and first gas distribution plate 38
With second gas distribution pipe 48.The first gas distribution plate 38 and second gas distribution pipe 48 are stacked on top of one another.Described first enters
Air pipe 37 is connected with the first gas distribution plate 38, and first air inlet pipeline 37 passes through the first gas distribution plate 38
The first reacting gas is inputted into the reaction chamber；Second air inlet pipeline 47 is connected with the second gas distribution pipe 48,
Second air inlet pipeline 47 inputs the second reacting gas into the reaction chamber by the second gas distribution pipe 48.
However, in the spray assemblies of the MOCVD devices of prior art, first air inlet pipeline 37 and second air inlet
Pipeline 47 needs that reacting gas is transferred into reaction by the first gas distribution plate 38 and second gas distribution pipe 48 respectively
In chamber；So that the spray assemblies of prior art are complicated, manufacturing cost is high, and the first gas distribution plate 38 is laminated on putting
In the second gas distribution pipe 47, so as to be stopped by the second gas distribution pipe 48 so that the first gas distribution plate
38 more difficult cleanings.
Therefore, it is necessary to research and develop, a kind of manufacturing cost is low, and the chemical vapor deposition unit easily cleaned.
The content of the invention
Prior art chemical vapor deposition unit exist manufacturing cost height, and be difficult to cleaning the problem of, the present invention provide one
The chemical vapor deposition unit that kind can solve the above problems.
A kind of chemical vapor deposition unit, it include reaction chamber, the spray assemblies at the top of reaction chamber and with it is described
The pedestal that spray assemblies are oppositely arranged, the pedestal can rotate relative to the spray assemblies, and the spray assemblies include first
Air inlet pipeline and the second air inlet pipeline, it is described for first gas and second gas to be transferred into gas distribution plate respectively
Gas distribution plate has the deflation area towards the pedestal, and the deflation area has some grooves, to house gas and install
Board member, the board member have some ventholes, and the venthole is arranged in several columns, and at least two arrange in the several columns
Venthole arrangement position part stagger, the venthole is discharging one kind or more in the first gas or second gas
Kind.
Compared with prior art, in chemical vapor deposition unit of the invention, groove and plate portion on the distribution plate
Part cooperatively forms the spray assemblies, the first gas or the second gas by only having the spray of a gas distribution plate
Leaching component is incorporated into the reaction chamber；So as to reduce the use of baroque gas service pipes, the chemical gas is reduced
The manufacturing cost of phase precipitation equipment.Meanwhile the board member is arranged in the groove, is formed together with the gas distribution plate
Towards the surface of described pedestal, compared with the prior art, without the stop to the gas service pipes, and the board member is easy
Split in from the distribution plate, therefore, the spray assemblies are more easy to clean.
Preferably, the deflation area has some with the integrally formed hole of the gas distribution plate, to by described the
Two gases are discharged from described hole.It is further preferred that face of the gas distribution plate away from pedestal has annular recess, with
And some fan-shaped conduits being connected with the annular recess, to distribute the second gas.Due to described hole one
The deflation area of the gas distribution plate is taken shape in, the second gas can discharge from described hole, so as to reduce the plate
The setting of component and the groove, reduces the number of components of the spray assemblies, further reduces manufacturing cost, and simultaneously
Reduce the installation of the board member, reduce the installation workload of the spray assemblies.
Preferably, the venthole is arranged in several columns, and at least two hole arrangement positions arranged stagger in the several columns.
Because the venthole is arranged in multiple row, and the hole arrangement position of at least two row is in the venthole of the multiple row
Stagger, when the pedestal rotates relative to the spray assemblies, that staggers two lists stomata and distinguish on the inswept pedestal not
With the region of radius, so that the gas distribution from venthole discharge is more uniform；Meanwhile when the outlet of the multiple row
The hole arrangement positions of at least two row are when staggering in hole, it is described stagger two list different radii area on the inswept pedestal of stomata
Domain is complementary, so that the distance in same row between two neighboring venthole larger can also can guarantee that gas is distributed
Uniformly, and then so that the difficulty that the multiple venthole is processed in the board member is greatly lowered.
Preferably, the material of the board member is identical with the material of the gas distribution plate.
Because chemical vapor depsotition equipment is usually operated under high temperature, usually above 500 degrees Celsius, even as high as 1000 take the photograph
Family name's degree, the material of the board member made is identical with the material of the gas distribution plate, can prevent because of board member and the gas
The coefficient of expansion between body distribution plate is mismatched and is damaged.
Preferably, the gas distribution plate is circularized, and nest is arranged in the annular central through hole, the 3rd air inlet
The third gas that pipeline introduces discharges reacting gas by the nest to the pedestal.It can prevent below the nest
Reaction zone cause reaction gas flow in reaction zone chaotic because no gas is passed through or be vortexed.
Brief description of the drawings
Fig. 1 is a kind of cross-sectional view of MOCVD devices of prior art.
Fig. 2 is the cross-sectional view of chemical vapor deposition unit first embodiment of the present invention.
Fig. 3 is surface texture schematic diagram of the spray assemblies shown in Fig. 2 towards pedestal side.
Surface texture schematic diagram of the gas distribution plate shown in Fig. 4 Fig. 2 away from pedestal side.
Fig. 5 is cross-sectional view of the spray assemblies shown in Fig. 3 along line A-A.
Fig. 6 is that the spray assemblies of chemical vapor deposition unit second embodiment of the present invention are tied towards the surface of pedestal side
Structure schematic diagram.
Fig. 7 is the gas distribution plate of the spray assemblies of chemical vapor deposition unit second embodiment of the present invention away from pedestal
The surface texture schematic diagram of side.
Fig. 8 is cross-sectional view of the spray assemblies shown in Fig. 6 along line B-B.
Fig. 9 is cross-sectional view of the spray assemblies shown in Fig. 6 along line C-C.
Embodiment
In order to facilitate the understanding of the purposes, features and advantages of the present invention, below in conjunction with the accompanying drawings to the present invention
Embodiment be described in detail.
Many details are elaborated in the following description to facilitate a thorough understanding of the present invention, still the present invention can be with
It is different from other manner described here using other to implement, therefore the present invention is not limited by following public specific embodiment
System.
Chemical vapor deposition (CVD) device of prior art exist manufacturing cost height, and be difficult to cleaning the problem of, for solve
Problem of the prior art, the present invention propose a kind of manufacturing cost chemical vapor deposition unit that is low, and easily cleaning, the chemistry
Vapor phase growing apparatus includes reaction chamber, the spray assemblies at the top of reaction chamber and the base being oppositely arranged with the spray assemblies
Seat, the pedestal can rotate relative to the spray assemblies, and the spray assemblies include the first air inlet pipeline and the second air inlet
Pipeline, for first gas and second gas to be transferred into gas distribution plate respectively, the gas distribution plate has towards institute
The deflation area of pedestal is stated, the deflation area has some grooves that can house gas and installing plate part, the board member tool
There are some ventholes, the venthole is arranged in several columns, the venthole arrangement position portions of at least two row in the several columns
Misclassification is opened, and the venthole is discharging the one or more in the first gas or second gas.
Compared with prior art, in chemical vapor deposition unit of the invention, groove and plate portion on the distribution plate
Part cooperatively forms the spray assemblies, the first gas or the second gas by only having the spray of a gas distribution plate
Leaching component is incorporated into the reaction chamber；So as to reduce the use of baroque gas service pipes, the chemical gas is reduced
The manufacturing cost of phase precipitation equipment.Meanwhile the board member is arranged in the groove, is formed together with the gas distribution plate
Towards the surface of described pedestal, compared with the prior art, without the stop to the gas service pipes, therefore, the spray
Component is more easy to clean.
Referring to Fig. 2, Fig. 2 is the cross-sectional view of chemical vapor deposition unit first embodiment of the present invention.Institute
State chemical vapor deposition unit 2 and be preferably MOCVD devices.The chemical vapor deposition unit 2 includes reaction chamber 21, is arranged at
Spray assemblies 22 and pedestal 23 in the reaction chamber 21；The spray assemblies 22 are fixedly installed on the top of the cavity 21,
The pedestal 23 is arranged at the bottom section of the reaction chamber 21.The spray assemblies 22 are oppositely arranged with the pedestal 23.Institute
State and form reaction zone between spray assemblies 22 and the pedestal 23.Reacting gas is incorporated into the reaction from the spray assemblies 22
Area.
The pedestal 23 includes one towards the substrate supports face of the spray assemblies 22, and the substrate supports face is used to support
One or more pending substrates 25.During chemical vapor deposition is carried out, one or more substrates 25 are arranged on institute
State substrate supports face；Further, particularly in MOCVD device, the pedestal 23 is supported in a rotating shaft, and the rotating shaft makes
Axis of the pedestal 23 around a vertical substrate supports face is obtained to rotate.Because the spray assemblies 22 are fixed on reaction chamber 21
On, therefore, the pedestal 23 also rotates relative to the spray assemblies 22 simultaneously.
The spray assemblies 22 are arranged at the top of reaction chamber 21, and are fixed on the top of the reaction chamber 21.It is described
Spray assemblies 22 include admission line 24, top plate 211, the gas distribution plate 227 positioned at the lower section of top plate 211 and some plate portions
Part (not shown)；The air inlet pipeline 24 conveys various gases through the top plate 211 to the gas distribution plate 227；Institute
State board member and be arranged at the gas distribution plate 227 adjacent to the side of the pedestal 23.
The admission line 24 includes the first admission line and the second admission line, and first admission line and second enters
Feed channel is connected to the gas distribution plate 227 through the top plate 211.First admission line and the second admission line point
First gas or second gas are not transmitted to the gas distribution plate 227.Optionally, the first gas include reacting precursor,
One or more in carrier gas, purge gas；The second gas include reacting precursor, carrier gas, one kind in purge gas or
It is a variety of.Preferably, the first gas includes the first reacting precursor gas, and the second gas is included before being reacted with described first
The second different reacting precursor gas of body gas；For example, when the chemical vapor deposition unit 2 is MOCVD devices, described
One reacting precursor gas can be III metal organic source gas, such as：Ga(CH3)3、In(CH3)3、Al(CH3)3、Ga(C2H5)3、
Zn(C2H5)3One or more in gas etc., the second reacting precursor gas can be V races hydride source gas, such as：
NH3、PH3、AsH3One or more in gas etc..
Please join Fig. 3, Fig. 4 and Fig. 5 simultaneously, Fig. 3 is that spray assemblies 22 shown in Fig. 2 are tied towards the surface of the side of pedestal 23
Structure schematic diagram.Fig. 4 is surface texture schematic diagram of the gas distribution plate 227 shown in Fig. 2 away from the side of pedestal 23.Fig. 5 is shown in Fig. 3
Cross-sectional view of the spray assemblies 22 along line A-A.The material for forming the gas distribution plate 227 can be graphite or carbonization
Silicon；The material for forming the gas distribution plate 227 can also be heating resisting metal material, such as tungsten or molybdenum；The gas distribution plate
227 include the deflation area towards the pedestal 23 and the top surface away from the pedestal 23.The deflation area has multiple grooves
221/222.The groove 221/222 connects with the admission line 24.Multiple board members 225 correspond to be installed on institute respectively
State in groove 221/222, and make it that there is the sky for housing gas between the bottom surface of groove 221/222 and the board member 225
Between.Preferably, the groove 221/222 includes multiple first grooves 221 and multiple second grooves 222.First groove 221
It is connected with first air inlet pipeline, for the venthole 2221 by being set in the board member 225 to the reaction zone
Transmit first gas；Second groove 222 is connected with second air inlet pipeline, for passing through the board member 225
The venthole 2221 of setting transmits second gas to the conversion zone.Preferably, the groove 221/222 is in the deflation area
It is arranged radially；It is further preferred that first groove 221 and second groove 222 are along the four of gas distribution plate 227
Circumferential direction is spaced.Again preferable, the multiple groove 221/222 is in sector.
Also referring to Fig. 3, Fig. 4, the top surface of the gas distribution plate 227 preferably has annular recess 223/224, institute
Stating has the through hole connected through the gas distribution plate 227 with the multiple groove 221/222 on annular recess 223/224,
The first and second gases introduced from the admission line 24 are introduced into the annular recess 223/224, and recessed in the annular
Uniformly spread, be then distributed to again by the through hole in the multiple groove 221/222, so as to increase in portion 223/224
The uniformity of gas diffusion.Preferably, the annular recess 223/224 includes the first annular annular recess of recess 223 and second
224；The first annular recess 223 is connected with the multiple first groove 221, and the first gas is from first air inlet
Pipeline is introduced into the first annular recess 223 and is redistributed to the multiple first groove 221；Second annular recess 224
It is connected with the multiple second groove 222, the second gas is introduced into second annular from second air inlet pipeline
Recess 224 is redistributed to the multiple second groove 222.
Described Fig. 5 is referred to, the material of the board member 225 can be identical with the gas distribution plate 227, can also not
It is identical；The material of the board member 225 can be identical with the gas distribution plate 227, can reduce manufacturing cost, and can make
Matched coefficients of thermal expansion is obtained, prevents the spray assemblies 22 from damaging at high temperature.Preferably, the bottom surface of the groove 221/222
With narrow slit 2111, the board member 225 has the flange 2251 to match in the narrow slit 2111.By the board member 225
When being assemblied in the gas distribution plate 227 so that the flange 2251 of the board member 225 is embedded into the bottom of groove 221/222
In face narrow slit 2111, so that the board member 225 is mounted in the groove 221/222；Preferably, the gas
The periphery of distribution plate 227 has installation portion, and the board member 225 is fixed in groove 221/222 by the installation portion.The plate portion
The shape of part 225 and the shape of the groove 221/222 match, and the gas for housing gas is formed with the groove 221/222
Body receiving space.The board member 225 have it is multiple through the board member 225 and connect the gas receiving space with it is described
The venthole 2221 of reaction zone.
The venthole 2221 is arranged in multiple row in board member 225.Preferably, the venthole 2221 of the multiple row is relative
The gas distribution plate 227 is arranged radially；It is further preferred that at least two row being located in a board member 225
The arrangement position of venthole 2221 is radially staggered along the gas distribution plate 227 relatively.It is further preferred that adjacent two list
The arrangement position of stomata 2221 is radially staggered along the gas distribution plate 227 relatively.In the preferred embodiment of the present invention
In, the gas distribution plate is circle, and described two list the relatively described gas distribution plate 227 in arrangement position edge of stomata 2221
Radial direction staggers.Because the venthole 2221 is arranged in multiple row, and at least two row in the venthole 2221 of the multiple row
The arrangement position of venthole 2221 stagger, when the pedestal 23 rotates relative to the spray assemblies 22, two row that stagger
Venthole 2221 distinguishes the region of different radii on the inswept pedestal 23, so that the gas from the venthole 2221 discharge
Distribution is more uniform；Meanwhile when the arrangement position of venthole 2221 of at least two row in the venthole 2221 of the multiple row staggers
When, it is described stagger two to list between the radius region of the inswept pedestal 23 of stomata 2221 be complementary so that
Distance in same row between two neighboring venthole 2221 larger can still ensure that the uniformity of gas distribution, so that
The difficulty of the multiple venthole 2221 processed in the board member 225 be greatly lowered.
Compared with prior art, in chemical vapor deposition unit 2 of the invention, the groove on the distribution plate 227
221/222 cooperatively forms the spray assemblies 22 with board member 225, and the first gas or the second gas are by only having
The spray assemblies 22 of one gas distribution plate 227 are incorporated into the reaction chamber；It is baroque in the prior art so as to reduce
The use of spray assemblies, reduce the manufacturing cost of the chemical vapor deposition unit 2.Meanwhile the board member 225 is arranged on
In the groove 221/222, and the surface towards described pedestal 23 is formed together with the gas distribution plate 227, it is relatively existing
There is technology, without the stop of the gas service pipes, therefore, the spray assemblies 22 are more easy to clean.
Please join Fig. 6, Fig. 7, Fig. 8 and Fig. 9 simultaneously, Fig. 6 is the spray of the embodiment party of chemical vapor deposition unit second of the present invention
Surface texture schematic diagram of the component towards pedestal side.Fig. 7 is the spray of chemical vapor deposition unit second embodiment of the present invention
Drench surface texture schematic diagram of the gas distribution plate away from pedestal side of component.Fig. 8 is spray assemblies shown in Fig. 6 along line B-B
Cross-sectional view.Fig. 9 is cross-sectional view of the spray assemblies shown in Fig. 6 along line C-C.The second embodiment
Chemical vapor deposition unit is roughly the same with the chemical vapor deposition unit 2 of the first embodiment, and its difference is：
Multiple gas and installing plate parts 325 of can housing are provided with the deflation area of the gas distribution plate 327
Groove 321, the shape of the groove 321 and position distribution and the 221 basic phase of the first groove in the first embodiment
Together, will not be repeated here；The board member 325 being installed in the groove 321 and the plate portion in the first embodiment
Part 225 is also essentially identical, also repeats no more herein.First air inlet pipeline connects with the groove 321, and by described recessed
Groove 321 and the board member 325 convey first gas to the reaction zone.
Referring to Fig. 7, the first annular recessed portion 323 is provided with the top surface of the gas distribution plate 327, described first
Have in annular recessed portion 323 through the gas distribution plate 327 and the through hole that is connected with the multiple groove 321；Described first
Annular recess 323 is connected by the through hole with the multiple groove 321；The first gas is from first air inlet pipeline
The first annular recess 323 is introduced into be assigned in the multiple groove 321 by the through hole again.The gas distribution plate
The second annular recessed portion 324 is further provided with 327 top surface and is connected with second annular recessed portion 324 multiple
Conduit 322.Wherein the multiple conduit 322 is arranged on the region complementary with the groove 321.Wherein the multiple conduit 322
Shape and position distribution and the second groove 222 in the first embodiment it is essentially identical, therefore repeat no more.The gas
Body distribution plate 327 further comprises multiple holes 3222 through the gas distribution plate 327, and described hole 3222 is arranged at phase
Region between adjacent two grooves 321.Described hole 3222 is used to arrange the second gas to the reaction zone.Wherein
The multiple hole 3222 is arranged in the conduit 322.The second gas entered in the conduit 322 passes through the multiple
The row of hole 3222 is to the reaction zone.Preferably, the multiple holes 3222 being correspondingly arranged in each conduit 322 are arranged in more
Row, the relatively described gas distribution plate 327 of hole 3222 of the multiple row are radial；It is further preferred that in the conduit 322
Multiple row described hole 3222 at least one row and the venthole 3211 of at least one row in adjacent board member 325 arrangement position
Along being radially staggered for the gas distribution plate 327 relatively.It is further preferred that adjacent one lists the row hole of stomata 3211 and one
Hole arrangement position being radially staggered along the gas distribution plate 327 relatively between 3222, so can cause reacting gas more
Add and equably mix.
Further, please refer to Fig. 7 and Fig. 9；The gas distribution plate 327 can be in annular shape；The spray group
Part further comprises a nest 37.The nest 37 is embedded into the central opening of circular gas distribution plate 327.Institute
State the first air inlet pipeline and the first gas is incorporated into the nest 37, then the gas is incorporated into by the nest 37
In first annular recess 323 on body distribution plate 327.The material of the nest 37, can be preferably steel, aluminium, copper, molybdenum,
One kind or any combination alloy in tungsten.The nest 37 includes base described in upper external member 371 and neighbour away from the pedestal
The cup lid group 372 of seat, the upper external member 371 are matched for clamping tightly the gas distribution plate 327 with the cup lid group 371.
A first gas diffusion region 373 and multiple gas diffusion paths 374 are provided with the upper external member 371.Described
One gas diffusion area 373 is connected with first air inlet pipe；The multiple gas diffusion paths 374 are evenly provided on described
Around one gas diffusion area 373, and connect the first gas diffusion region 373 and the first annular recess portion 323.It is described
The first gas that first admission line introduces is introduced into the first gas diffusion region 373, leads to by the gas diffusion
Road 374 is uniformly distributed in the first annular recess portion 323, so as to further improve being evenly distributed for the first gas
Property.
It is further preferred that the spray assemblies further comprise the 3rd air inlet pipeline, the 3rd air inlet pipeline is used for
Third gas is introduced, wherein the third gas is preferably carrier gas or purge gas.The upper external member of the nest 37
A purge gas distribution space 375 is formed between 371 and the cup lid group 372.3rd air inlet pipeline passes through the upper set
Part 371 is connected with the purge gas distribution space 375.Preferably, the 3rd air inlet pipeline is nested in first air inlet
In pipeline, and the purge gas distribution space 375 is connected through the first gas diffusion space 373.The cup lid group 372
Multiple passages 376 including connecting the purge gas distribution space 375 and the reaction zone, the passage 376 to
The third gas is passed through into the reaction zone of the lower section of nest 37；Prevent the reaction zone below the nest due to not having
There is gas to be passed through and cause the reaction gas flow in reaction zone chaotic or be vortexed.
Compared with the chemical vapor deposition unit 2 of the first embodiment, the chemical gas of the second embodiment
In phase precipitation equipment, set and installing plate part 325 only in the groove 321；Therefore need to pacify in the spray assemblies
The quantity of the part of board member 325 of dress is greatly reduced, thus can further be reduced the cost, and is installed and safeguarded more simple.
Although the present invention is disclosed as above with preferred embodiment, the present invention is not limited to this.Such as in the first embodiment party
Formula, the gas distribution plate can also be circular, and the spray assemblies can also further comprise as in second embodiment
Nest and the 3rd air inlet pipeline；At least one row can also be set between adjacent first groove and second groove
Passage, the passage are passed through for isolating described first and the second gas to conversion zone, prevent first He
The third gas of pre-reaction occurs before the base substrate supporting surface is reached for the second gas.
Although the present invention is disclosed as above with preferred embodiment, the present invention is not limited to this.Any art technology
Personnel, without departing from the spirit and scope of the present invention, it can make various changes or modifications, therefore protection scope of the present invention should
It is defined when by claim limited range.
Claims (17)
1. a kind of chemical vapor deposition unit, including：Reaction chamber, the spray assemblies at the top of the reaction chamber and with it is described
The pedestal that spray assemblies are oppositely arranged, the pedestal can rotate relative to the spray assemblies, it is characterised in that the spray group
Part includes the first air inlet pipeline and the second air inlet pipeline, for respectively transmitting first gas and second gas to gas point
Matching board, the gas distribution plate have deflation area, and the deflation area has some grooves, to house gas and mounting plate portion
Part, the board member have some ventholes, and the venthole is arranged in several columns, and at least two row goes out in the several columns
Stomata arrangement position part is staggered, the venthole to discharge the one or more in the first gas or second gas,
The top surface of the gas distribution plate has multiple annular recess, and annular recess is respectively connected with leading to the multiple groove.
2. chemical vapor deposition unit as claimed in claim 1, it is characterised in that the deflation area has some be integrally formed
Hole, to by the second gas from described hole discharge.
3. chemical vapor deposition unit as claimed in claim 2, it is characterised in that there is slit to install in the groove
The board member, the first gas are discharged from the venthole.
4. chemical vapor deposition unit as claimed in claim 3, it is characterised in that the venthole is arranged in several columns, institute
The hole arrangement position for stating at least two row in several columns staggers.
5. such as the chemical vapor deposition unit any one of claim 1-4, it is characterised in that the gas distribution plate is
Annular, its material are graphite, carborundum or metal material.
6. chemical vapor deposition unit as claimed in claim 5, it is characterised in that the annulus of the gas distribution plate is embedded in
There is a nest, the nest is the first gas is incorporated into the groove from first air inlet pipeline.
7. chemical vapor deposition unit as claimed in claim 6, it is characterised in that the nest is included away from the pedestal
Upper external member and neighbour described in pedestal cup lid group, first air inlet pipeline passes through the upper external member, the material of the upper external member
Material includes one kind or any combination alloy in steel, aluminium, copper, molybdenum, tungsten.
8. chemical vapor deposition unit as claimed in claim 1, it is characterised in that the first gas include reacting precursor,
One or more in carrier gas, purge gas.
9. chemical vapor deposition unit as claimed in claim 1, it is characterised in that the second gas include reacting precursor,
One or more in carrier gas, purge gas.
10. chemical vapor deposition unit as claimed in claim 1, it is characterised in that the first air inlet tubulature road is used to pass
Defeated III metal organic source, second air inlet pipeline are used to transmit V races hydride source.
11. chemical vapor deposition unit as claimed in claim 10, it is characterised in that the III metal organic source includes
Ga(CH3)3、In(CH3)3、Al(CH3)3、Ga(C2H5)3、Zn(C2H5)3One or more in gas.
12. chemical vapor deposition unit as claimed in claim 10, it is characterised in that V races hydride source includes NH3、
PH3、AsH3One or more in gas.
13. chemical vapor deposition unit as claimed in claim 1, it is characterised in that the edge of the gas distribution plate
With installation portion, the installation portion is to the fixation board member.
14. chemical vapor deposition unit as claimed in claim 2, it is characterised in that described hole is arranged in several columns, at least
The hole aligning part of one row described hole and a row venthole staggers.
15. chemical vapor deposition unit as claimed in claim 5, it is characterised in that the material of the board member and the gas
The material of body distribution plate is identical.
16. chemical vapor deposition unit as claimed in claim 5, it is characterised in that the material of the board member and the gas
The material of body distribution plate differs.
17. chemical vapor deposition unit as claimed in claim 7, it is characterised in that the spray assemblies also enter including the 3rd
Air pipe is to introduce third gas, and the 3rd air inlet pipeline passes through the upper external member, and the cup lid group has some ventilations
Hole, the third gas to be discharged.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210396302.6A CN103774115B (en) | 2012-10-17 | 2012-10-17 | Chemical vapor deposition unit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210396302.6A CN103774115B (en) | 2012-10-17 | 2012-10-17 | Chemical vapor deposition unit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103774115A CN103774115A (en) | 2014-05-07 |
| CN103774115B true CN103774115B (en) | 2017-12-29 |
Family
ID=50566858
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210396302.6A Active CN103774115B (en) | 2012-10-17 | 2012-10-17 | Chemical vapor deposition unit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103774115B (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108677167B (en) * | 2018-06-27 | 2020-07-03 | 沈阳拓荆科技有限公司 | Spraying device of semiconductor coating equipment, chemical vapor deposition equipment and operation method thereof |
| US11505863B2 (en) * | 2019-05-31 | 2022-11-22 | Applied Materials, Inc. | Methods for forming films on substrates |
| CN113235068B (en) * | 2021-04-07 | 2023-09-01 | 深圳市华星光电半导体显示技术有限公司 | Chemical vapor deposition device |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100731164B1 (en) * | 2005-05-19 | 2007-06-20 | 주식회사 피에조닉스 | Apparatus of chemical vapor deposition with a shower head and method therof |
| US20100018463A1 (en) * | 2008-07-24 | 2010-01-28 | Chen-Hua Yu | Plural Gas Distribution System |
| CN201626981U (en) * | 2009-09-02 | 2010-11-10 | 中国科学院半导体研究所 | Gas inlet device of chemical vapor phase deposition epitaxy equipment |
| TWI385272B (en) * | 2009-09-25 | 2013-02-11 | Ind Tech Res Inst | Gas distribution plate and apparatus using the same |
| KR101306315B1 (en) * | 2011-01-11 | 2013-09-09 | 주식회사 디엠에스 | Apparatus for chemical vapor deposition |
-
2012
- 2012-10-17 CN CN201210396302.6A patent/CN103774115B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN103774115A (en) | 2014-05-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR101794852B1 (en) | Exhaust for cvd reactor | |
| JP4958798B2 (en) | Chemical vapor deposition reactor and chemical vapor deposition method | |
| US20050011459A1 (en) | Chemical vapor deposition reactor | |
| US8888919B2 (en) | Wafer carrier with sloped edge | |
| US20120100292A1 (en) | Gas injection unit and a thin-film vapour-deposition device and method using the same | |
| CN101802254A (en) | chemical vapor deposition reactor | |
| JP2009260291A (en) | Epitaxial wafer manufacturing apparatus and manufacturing method | |
| US9388493B2 (en) | Self-cleaning shutter for CVD reactor | |
| CN102668033A (en) | Semiconductor thin-film manufacturing method, seminconductor thin-film manufacturing apparatus, susceptor, and susceptor holding tool | |
| CN102234793A (en) | Carbon component and method for manufacturing the same | |
| CN103774115B (en) | Chemical vapor deposition unit | |
| CN103014667B (en) | Chemical vapor deposition (CVD) device | |
| US20150361582A1 (en) | Gas Flow Flange For A Rotating Disk Reactor For Chemical Vapor Deposition | |
| CN105200395B (en) | Air inlet and cooling device for MOCVD device | |
| CN205711042U (en) | A kind of Device for epitaxial growth of silicon carbide | |
| CN103014669B (en) | Chemical vapor deposition (CVD) device | |
| CN104141116A (en) | Metal organic chemical vapor deposition device, gas spray component and gas distribution control method | |
| CN103014668B (en) | Chemical vapor deposition (CVD) device | |
| CN103361624A (en) | Metallo-organic compound chemical vapor deposition method and device | |
| KR101135083B1 (en) | Apparatus and method for depositing thin layer | |
| CN103014664B (en) | Chemical vapor deposition apparatus | |
| CN103014666B (en) | Chemical vapor deposition (CVD) device | |
| US20120247392A1 (en) | Multichamber thin-film deposition apparatus and gas-exhausting module | |
| CN104178747A (en) | Split type gas spraying component and metal organic chemical vapor deposition device | |
| CN103074602A (en) | Reaction chamber of chemical vapor deposition apparatus |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20190725 Address after: Building B, Building 4, 3255 Sixian Road, Songjiang District, Shanghai, 201260 Patentee after: Ideal semiconductor equipment (Shanghai) Co., Ltd. Address before: 201203 No. 1 Curie Road, Zhangjiang Hi-Tech Park, Pudong New Area, Shanghai Patentee before: Ideal Energy Equipment (Shanghai) Ltd. |
|
| TR01 | Transfer of patent right | ||
| CP03 | Change of name, title or address |
Address after: Room 402, building 3, 3255 Sixian Road, Songjiang District, Shanghai, 201602 Patentee after: Ideal semiconductor equipment (Shanghai) Co., Ltd Address before: Building B, Building 4, 3255 Sixian Road, Songjiang District, Shanghai, 201260 Patentee before: LIXIANG JINGYAN SEMICONDUCTOR EQUIPMENT (SHANGHAI) Co.,Ltd. |
|
| CP03 | Change of name, title or address |