CN113235068B - Chemical vapor deposition device - Google Patents
Chemical vapor deposition device Download PDFInfo
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- CN113235068B CN113235068B CN202110372818.6A CN202110372818A CN113235068B CN 113235068 B CN113235068 B CN 113235068B CN 202110372818 A CN202110372818 A CN 202110372818A CN 113235068 B CN113235068 B CN 113235068B
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- air inlet
- inlet pipeline
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- vapor deposition
- chemical vapor
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The invention provides a chemical vapor deposition device. The chemical vapor deposition device comprises a reaction chamber, wherein a first air inlet pipeline is arranged at the top of the reaction chamber, and a second air inlet pipeline is arranged in the first air inlet pipeline; the first air inlet pipeline is used for introducing reaction gas, and the second air inlet pipeline is used for introducing cleaning gas; the outlet end of the second air inlet pipeline is provided with a flow distribution disc, the flow distribution disc is positioned in the reaction cavity, the flow distribution disc is provided with a first through hole and a plurality of second through holes, the outlet of the second air inlet pipeline corresponds to the first through hole, and the outlet of the first air inlet pipeline corresponds to the plurality of second through holes. According to the invention, the reaction gas and the cleaning gas are isolated through the second air inlet pipeline, so that aluminum trifluoride crystal particles are prevented from being brought into the reaction chamber, and the distribution disk is arranged, so that the gas can be guided to diffuse to the periphery and the lower side, the reaction gas and the cleaning gas are further isolated, and the air flow distribution uniformity can be synchronously improved, thereby improving the film forming uniformity.
Description
Technical Field
The invention relates to the technical field of display, in particular to a chemical vapor deposition device.
Background
In manufacturing a display panel, an amorphous thin film and a microcrystalline thin film are generally deposited using a chemical vapor deposition (Chemical Vapor Deposition, CVD) process. CVD processes are performed by injecting a precursor reactant gas into a plasma-enhanced chemical vapor deposition (Plasma Enhanced Chemical Vapor Deposition, PECVD) chamber, and then using a plasma formed by Radio Frequency (RF) or direct current discharge to cleave the gas into reactive ions or radicals. CVD processes are widely used in the field of display panel manufacturing. Because the PECVD chamber is a closed vacuum system, when film is formed, films are deposited on the substrate and the inner wall of the chamber, and when the films on the inner wall of the chamber are deposited to a certain thickness, the films are easy to fall off and fall on the substrate, so that the defect is generated on the substrate, and the yield is seriously affected. Thus, a remote plasma source purge (Remote Plasma Source Clean, RPSC) is required to wash away the film from the chamber walls after a certain number of film depositions.
Wherein the reactive gas and the purge gas in the CVD process are nitrogen trifluoride (NF 3 ) All pass through the RPSC unit and enter the chamber through the same pipeline. NF when cleaning is performed 3 F ions are dissociated, the material of the air inlet pipeline is aluminum (Al), and the F ions react with the Al to generate aluminum trifluoride (AlF) 3 ) As the cleaning time is increased, the aluminum trifluoride crystal is gradually enlarged; when the film forming process is performed later, the reaction gas enters from the gas inletThe aluminum trifluoride crystal is carried into the chamber causing the aluminum trifluoride crystal particles on the substrate to agglomerate. In order to avoid that aluminum trifluoride crystals enter the cavity, the three-way device is arranged, so that reaction gas avoids the RPSC unit and enters the cavity, and even though the reaction gas avoids the RPSC unit, the reaction gas and cleaning gas enter the cavity through the same air inlet, and a small amount of aluminum trifluoride crystal particles are accumulated on the substrate along with the increase of time, so that the quality of the substrate is influenced, and the yield is influenced. Therefore, it is necessary to improve this defect.
Disclosure of Invention
The embodiment of the invention provides a chemical vapor deposition device which is used for solving the technical problems that the quality of a substrate is affected and the yield is affected because reaction gas and cleaning gas enter a cavity through the same air inlet in the chemical vapor deposition device in the prior art, so that aluminum trifluoride crystal particles generated in the cleaning process are gathered on the substrate.
The embodiment of the invention provides a chemical vapor deposition device, which comprises a reaction chamber, wherein a first air inlet pipeline is arranged at the top of the reaction chamber, and a second air inlet pipeline is arranged in the first air inlet pipeline; the first air inlet pipeline is used for introducing reaction gas, and the second air inlet pipeline is used for introducing cleaning gas; the outlet end of the second air inlet pipeline is provided with a flow distribution disc, the flow distribution disc is positioned in the reaction cavity, a first through hole and a plurality of second through holes are formed in the flow distribution disc, the outlet of the second air inlet pipeline corresponds to the first through hole, and the outlet of the first air inlet pipeline corresponds to the second through holes.
In the chemical vapor deposition apparatus provided by the embodiment of the present invention, the second air inlet pipeline and the first air inlet pipeline are concentric ring pipelines.
In the chemical vapor deposition device provided by the embodiment of the invention, the diverter tray is connected with the top of the reaction chamber.
In the chemical vapor deposition apparatus provided by the embodiment of the invention, a plurality of air outlet channels are formed between the diverter tray and the top of the reaction chamber.
In the chemical vapor deposition device provided by the embodiment of the invention, the diverter disc and the second air inlet pipeline are integrally formed.
In the chemical vapor deposition device provided by the embodiment of the invention, the diverter disc is detachably connected with the second air inlet pipeline through a connecting pipe, and the connecting pipe is a hollow pipe for conducting the second air inlet pipeline and the first through hole.
In the chemical vapor deposition apparatus provided by the embodiment of the invention, a groove is formed at the outlet end of the second air inlet pipeline, and the connecting pipe is connected with the groove through at least one sealing ring.
In the chemical vapor deposition apparatus provided by the embodiment of the invention, the radius of the second air inlet pipeline is greater than 0 and less than or equal to 5 cm.
In the chemical vapor deposition apparatus provided by the embodiment of the invention, the radius of the first air inlet pipeline is larger than the radius of the second air inlet pipeline and is smaller than or equal to 20 cm.
In the chemical vapor deposition apparatus provided by the embodiment of the invention, the plurality of second through holes are distributed at equal intervals.
The beneficial effects are that: the chemical vapor deposition device provided by the embodiment of the invention comprises: the reaction chamber is provided with a first air inlet pipeline at the top, and a second air inlet pipeline is arranged in the first air inlet pipeline; the first air inlet pipeline is used for introducing reaction gas, and the second air inlet pipeline is used for introducing cleaning gas; the outlet end of the second air inlet pipeline is provided with a flow distribution disc, the flow distribution disc is positioned in the reaction cavity, the flow distribution disc is provided with a first through hole and a plurality of second through holes, the outlet of the second air inlet pipeline corresponds to the first through hole, and the outlet of the first air inlet pipeline corresponds to the plurality of second through holes. According to the embodiment of the invention, the reaction gas and the cleaning gas are isolated through the second air inlet pipeline, so that the defect of a substrate caused by the fact that aluminum trifluoride crystal particles are brought into the reaction chamber is avoided.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings that are required to be used in the description of the embodiments will be briefly described below.
Fig. 1 is a schematic diagram of a basic structure of a chemical vapor deposition apparatus according to an embodiment of the present invention.
Fig. 2 is a top view of a first air intake pipe and a second air intake pipe according to an embodiment of the present invention.
Fig. 3a and 3b are schematic diagrams of basic structures of a diverter tray according to an embodiment of the present invention.
Fig. 4 is a schematic diagram of a chemical vapor deposition apparatus performing cleaning according to an embodiment of the present invention.
FIG. 5 is a schematic diagram of a chemical vapor deposition apparatus for performing a film forming process according to an embodiment of the present invention.
Fig. 6 is a schematic diagram of the basic structure of another diverter tray according to an embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. In the drawings, the size and thickness of the components depicted in the drawings are not to scale for clarity and ease of understanding and description.
Referring to fig. 1, a schematic basic structure of a chemical vapor deposition apparatus according to an embodiment of the present invention is shown, where the chemical vapor deposition apparatus includes a reaction chamber 10, a first air inlet pipe 101 is disposed at a top of the reaction chamber 10, and a second air inlet pipe 102 is disposed inside the first air inlet pipe 101; the first air inlet pipeline 101 is used for introducing reaction gas, and the second air inlet pipeline 102 is used for introducing cleaning gas; the outlet end of the second air inlet pipe 102 is provided with a flow dividing disc 103, the flow dividing disc 103 is located in the reaction chamber 10, a first through hole 1031 and a plurality of second through holes 1032 are formed in the flow dividing disc 103, the outlet of the second air inlet pipe 102 corresponds to the first through hole 1031, and the outlet of the first air inlet pipe 101 corresponds to the plurality of second through holes 1032.
Chemical vapor deposition refers to a surface modification technique that imparts specific properties to the surface of the substrate 108 without changing the composition of the substrate 108 material and without weakening the strength of the substrate 108 material. Chemical vapor deposition is a process in which vapor containing a gaseous reactant or a liquid reactant constituting a thin film element and other gases required for the reaction are introduced into the reaction chamber 10, chemical reaction occurs on the surface of the substrate 108, and a solid product is deposited on the surface of the substrate 108 to form a thin film. Chemical vapor deposition mainly includes four stages: (1) diffusion of the reactive gas toward the surface of the substrate 108; (2) the reactive gas is adsorbed on the surface of the substrate 108; (3) chemically reacting at the surface of the substrate 108; (4) the gaseous byproducts are stripped from the surface of the substrate 108. Wherein the gaseous by-product is pumped through the gas outlet 105 of the chemical vapor deposition apparatus.
It should be noted that, the chemical vapor deposition apparatus provided in the embodiment of the present invention adopts a process of enhancing chemical activity of a reactant substance by using low-temperature plasma 109 generated by gas glow discharge to promote chemical reaction between gases, so as to deposit a high-quality plating layer at a lower temperature. The plasma enhanced chemical vapor deposition is divided into direct current glow discharge (DC-PCVD), radio frequency glow discharge (RF-PCVD), microwave plasma discharge (MW-PCVD) and the like according to a plasma energy source mode, and the embodiment of the invention is illustrated by taking the radio frequency glow discharge as an example. As the frequency increases, the more pronounced the effect of the plasma enhanced chemical vapor deposition process, the lower the temperature at which the compound is formed. During the discharge process of the radio frequency glow discharge, no electrode discharge is generated, so that the electrodes 106 and 107 are not corroded, and no impurity pollution is generated.
In the process of manufacturing the display panel, silane (SiH 4 ) And ammonia (NH) 3 ) As a reaction gas, the radio frequency excited plasma reacts to produce a silicon nitride film. In addition to silicon nitride formation on the surface of the substrate 108 during the reaction of silane and ammonia, silicon nitride is also formed in other parts of the reaction chamber 10 (e.g., the inner wall of the reaction chamber 10 and the gas outlet 105)And forming silicon nitride. After long-time production, these silicon nitrides will be precipitated in the form of blocks on the inner wall of the reaction chamber 10 and the gas outlet 105, and the silicon nitrides on the inner wall will fall off and fall onto the substrate 108, which causes defects on the substrate 108 and even blocks the gas outlet 105, thereby causing that gaseous byproducts cannot be discharged in time and affecting the process effect, and therefore, the reaction chamber 10 needs to be cleaned at regular time. By introducing nitrogen trifluoride gas which is the same as the total volume of silane and ammonia gas, fluoride ions generated by the nitrogen trifluoride gas in a plasma environment can react with silicon nitride deposited on the inner wall and the gas outlet of the reaction chamber 10 to generate powdery silicon tetrafluoride, and the powdery silicon tetrafluoride is pumped away, so that the effect of cleaning the reaction chamber 10 is achieved. However, since the air inlet pipe is made of aluminum, fluoride ions react with aluminum to generate aluminum trifluoride crystals, the aluminum trifluoride crystals become larger along with the increase of the cleaning time, and when the film forming process is performed subsequently, the reaction gas brings aluminum trifluoride crystal particles into the reaction chamber 10, so that the aluminum trifluoride crystal particles are accumulated on the substrate 108, and the substrate 108 is defective, thereby influencing the yield.
It can be appreciated that by adding the second air inlet pipeline 102 inside the first air inlet pipeline 101, the second air inlet pipeline 102 can isolate the cleaning gas from the reaction gas, the cleaning gas is injected from the second air inlet pipeline 102, the reaction gas is injected from the first air inlet pipeline 101, the aluminum trifluoride crystal particles generated in the cleaning process are prevented from being brought into the reaction chamber 10 by the reaction gas in the film forming process, and the risk of aggregation of the aluminum trifluoride crystal particles on the surface of the substrate is reduced.
It can be understood that a diverter tray 103 is additionally provided at the outlet end of the second air inlet pipe 102, the diverter tray 103 is located in the reaction chamber 10, a first through hole 1031 and a plurality of second through holes 1032 are provided on the diverter tray 103, the outlet of the second air inlet pipe 102 corresponds to the first through hole 1031, and the outlet of the first air inlet pipe 101 corresponds to the plurality of second through holes 1032. The purge gas injected through the second gas inlet pipe 102 enters the reaction chamber 10 through the first through holes 1031, and the reaction gas injected through the first gas inlet pipe 101 diffuses into the gaps between the top of the reaction chamber 10 and the distribution plate 103 and the second through holes 1032. Therefore, the gas inlet path of the cleaning gas and the gas inlet path of the reaction gas can be further isolated, the risk of aggregation of aluminum trifluoride crystal particles on the surface of the substrate is further reduced, and the uniformity of the gas flow distribution of the reaction gas is also improved, so that the film formation uniformity of the substrate 108 can be improved.
In one embodiment, the shape of the diverter disc 103 may be circular or rectangular, the diverter disc 103 is connected to the top of the reaction chamber 10, where a screw hole (not shown) is provided at an edge of the diverter disc 103, and the diverter disc 103 is fixedly connected to the top of the reaction chamber 10 by a bolt 104. Specifically, a plurality of gas outlet channels, such as a horizontal gas outlet channel and a downward gas outlet channel through a plurality of second through holes 1032, are formed between the flow distribution plate 103 and the top of the reaction chamber 10, and the reaction gas injected through the first gas inlet pipe 101 is diffused into the plurality of gas outlet channels. Wherein, the horizontal diffusion path of the reaction gas can be adjusted by adjusting the screw distance between the screw 104 and the flow dividing plate 103, so that the diffusion rate of the reaction gas can be adjusted.
In one embodiment, the diverter tray 103 is integrally formed with the second air intake conduit 102. Specifically, the radius of the second air inlet pipe 102 is the same as that of the first through hole 1031, and the second air inlet pipe 102 is perpendicular to the plane where the diverter disc 103 is located.
In an embodiment, referring to fig. 2, in a top view of a first air inlet pipe and a second air inlet pipe provided in an embodiment of the present invention, the second air inlet pipe 102 and the first air inlet pipe 101 are concentric ring pipes, and specifically, a center of the second air inlet pipe 102 coincides with a center of the first air inlet pipe 101. In this embodiment, the radius of the second air inlet pipe 102 is greater than 0 and less than or equal to 5 cm; the radius of the first air inlet pipeline 101 is larger than the radius of the second air inlet pipeline 102 and is smaller than or equal to 20 cm. In other embodiments, the first air inlet pipe 101 and the second air inlet pipe 102 may have other shapes, such as a rectangle or other polygons, which is not limited by the present invention.
Next, referring to fig. 3a and 3b, a basic structural schematic diagram of a diverter tray according to an embodiment of the present invention is shown, the diverter tray 103 includes a first through hole 1031 and a plurality of second through holes 1032, the plurality of second through holes 1032 are disposed around the first through hole 1031, and the first through hole 1031 is fixedly connected to an outlet end of the second air inlet pipe. The edge of the diverter tray 103 is provided with a plurality of screw holes (not shown), and the diverter tray 103 is fixedly connected with the top of the reaction chamber through a plurality of bolts 104. Wherein, the horizontal diffusion path of the reaction gas can be adjusted by adjusting the screw distance between the screw 104 and the flow dividing plate 103, so that the diffusion rate of the reaction gas can be adjusted.
In one embodiment, the plurality of second through holes 1032 are equally spaced. It can be appreciated that after the reaction gas is injected through the first air inlet pipe, the reaction gas diffuses downward through the plurality of second through holes 1032, and in this embodiment, by setting the plurality of second through holes 1032 to be distributed at equal intervals, the downward diffusion of the reaction gas can be uniformly distributed, so that the film forming uniformity of the substrate can be improved. Specifically, the plurality of second through holes 1032 may be distributed in a matrix (as in fig. 3 a) or in a ring (as in fig. 3 b). Wherein, the downward diffusion path of the reaction gas can be adjusted by adjusting the pore diameters and distribution densities of the plurality of second through holes 1032, so that the diffusion rate of the reaction gas can be adjusted.
Next, referring to fig. 4, a schematic diagram of a chemical vapor deposition apparatus for performing cleaning according to an embodiment of the present invention is shown, in which silicon nitride is generated on other portions of the reaction chamber 10 (e.g. the inner wall of the reaction chamber 10 and the gas outlet 105) in addition to silicon nitride generated on the surface of the substrate 108 during the chemical vapor deposition process. After long-time production, these silicon nitrides will be precipitated in the form of blocks on the inner wall of the reaction chamber 10 and the gas outlet 105, and the silicon nitrides on the inner wall will fall off and fall onto the substrate 108, which causes defects on the substrate 108 and even blocks the gas outlet 105, thereby causing that gaseous byproducts cannot be discharged in time and affecting the process effect, and therefore, the reaction chamber 10 needs to be cleaned at regular time. By adopting the chemical vapor deposition device provided by the embodiment of the invention, nitrogen trifluoride gas is injected from the second air inlet pipeline 102, the nitrogen trifluoride gas can pass through the first through hole 1031, fluorine ions generated in a plasma environment can react with silicon nitride deposited on the inner wall and the air outlet of the reaction chamber 10 to generate powdery silicon tetrafluoride, and the powdery silicon tetrafluoride is pumped away by a pump, so that the effect of cleaning the reaction chamber 10 is achieved. Specifically, the diffusion path of the cleaning gas nitrogen trifluoride is shown in the schematic direction of the bold arrow in fig. 4.
Next, referring to fig. 5, a schematic diagram of a film forming process performed by the chemical vapor deposition apparatus according to an embodiment of the present invention is shown, in which a reaction gas is injected from the first gas inlet pipe 101 and then diffuses into the gaps between the flow distribution plate 103 and the top of the reaction chamber 10 and the second holes 1032, i.e. the reaction gas diffuses to the periphery (horizontal direction) and the bottom, and the specific diffusion path is shown by the thickened arrow in fig. 5. Comparing the diffusion paths of fig. 4 and 5, the chemical vapor deposition apparatus provided by the embodiment of the invention can effectively isolate the cleaning gas and the reaction gas, and avoid the defect of the substrate caused by the aluminum trifluoride crystal particles being brought into the reaction chamber. According to the embodiment of the invention, the distribution disk 103 is arranged, so that the reaction gas can be guided to diffuse to the periphery and the lower side, and the uniformity of the gas flow distribution of the reaction gas is improved, thereby improving the uniformity of the film formation.
Next, referring to fig. 6, a basic structural schematic diagram of another diverter tray according to an embodiment of the present invention is provided, the diverter tray 103 includes a first through hole 1031 and a plurality of second through holes 1032, the diverter tray 103 is detachably connected to the second air inlet pipe 102 through a connecting pipe 1033, and the connecting pipe 1033 is a hollow pipe for conducting the second air inlet pipe 102 and the first through holes 1031. Specifically, the outlet end of the second air inlet pipe 102 is formed with a groove 1021, and the connection pipe 1033 is connected with the groove 1021 through at least one sealing ring 1034. It is to be appreciated that the diverter tray 103 is detachably connected to the second air inlet pipe 102 through the connecting pipe 1033, that is, the second air inlet pipe 102 may be separated from the diverter tray 103, so as to facilitate disassembly and cleaning.
In one embodiment, the seal 1034 is made of a deformable material, such as rubber, and the radius of the seal 1034 is slightly larger than the radius of the groove 1021. In other embodiments, the connection pipe 1033 may also be screwed to the second intake pipe 102.
In summary, the chemical vapor deposition apparatus provided in the embodiment of the present invention includes: the reaction chamber is provided with a first air inlet pipeline at the top, and a second air inlet pipeline is arranged in the first air inlet pipeline; the first air inlet pipeline is used for introducing reaction gas, and the second air inlet pipeline is used for introducing cleaning gas; the outlet end of the second air inlet pipeline is provided with a flow distribution disc, the flow distribution disc is positioned in the reaction cavity, the flow distribution disc is provided with a first through hole and a plurality of second through holes, the outlet of the second air inlet pipeline corresponds to the first through hole, and the outlet of the first air inlet pipeline corresponds to the plurality of second through holes. According to the embodiment of the invention, the reaction gas and the cleaning gas are isolated through the second air inlet pipeline, so that the defect of a substrate caused by the fact that the reaction gas and the cleaning gas are brought into the reaction chamber is avoided.
The chemical vapor deposition device provided by the embodiment of the invention is described in detail. It should be understood that the exemplary embodiments described herein are to be considered merely descriptive for aiding in the understanding of the method of the present invention and its core concepts and not for limiting the invention.
Claims (7)
1. The chemical vapor deposition device is characterized by comprising a reaction chamber, wherein a first air inlet pipeline is arranged at the top of the reaction chamber, and a second air inlet pipeline is arranged in the first air inlet pipeline; the first air inlet pipeline is used for introducing reaction gas, and the second air inlet pipeline is used for introducing cleaning gas;
the outlet end of the second air inlet pipeline is provided with a flow distribution disc, the flow distribution disc is positioned in the reaction cavity, the flow distribution disc is provided with a first through hole and a plurality of second through holes, the outlet of the second air inlet pipeline corresponds to the first through hole, and the outlet of the first air inlet pipeline corresponds to the plurality of second through holes;
the flow distribution disc is detachably connected with the second air inlet pipeline through a connecting pipe, a groove is formed at the outlet end of the second air inlet pipeline, the connecting pipe is connected with the groove through at least one sealing ring, and the connecting pipe is a hollow pipe for conducting the second air inlet pipeline and the first through hole;
the edge of the flow distribution disc is provided with a plurality of screw holes, the flow distribution disc is fixedly connected with the top of the reaction chamber through a plurality of bolts, and the horizontal diffusion path of the reaction gas is adjusted by adjusting the screw connection distance between the bolts and the flow distribution disc, so that the diffusion rate of the reaction gas is adjusted.
2. The chemical vapor deposition apparatus of claim 1, wherein the second inlet conduit and the first inlet conduit are concentric ring conduits.
3. The chemical vapor deposition apparatus of claim 1, wherein the diverter tray is coupled to a top of the reaction chamber.
4. The chemical vapor deposition apparatus according to claim 3, wherein a plurality of gas outlet passages are formed between the flow distribution plate and the top of the reaction chamber.
5. The chemical vapor deposition apparatus according to claim 1, wherein the radius of the second gas inlet pipe is greater than 0 and less than or equal to 5 cm.
6. The chemical vapor deposition apparatus according to claim 5, wherein a radius of the first air intake pipe is greater than a radius of the second air intake pipe and is less than or equal to 20 cm.
7. The chemical vapor deposition apparatus of claim 1, wherein the plurality of second through holes are equally spaced.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202110372818.6A CN113235068B (en) | 2021-04-07 | 2021-04-07 | Chemical vapor deposition device |
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| CN202110372818.6A CN113235068B (en) | 2021-04-07 | 2021-04-07 | Chemical vapor deposition device |
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| CN113235068B true CN113235068B (en) | 2023-09-01 |
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| CN114481095A (en) * | 2022-01-28 | 2022-05-13 | 德州智南针机械科技有限公司 | Cleaning process and equipment for internal fittings of chemical vapor deposition equipment |
| CN115537779A (en) * | 2022-10-12 | 2022-12-30 | 拓荆科技股份有限公司 | Gas conveying structure and vapor deposition equipment |
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