CN201284372Y - Reaction cavity of multi-airflow metallorganic chemical vapor deposition apparatus - Google Patents
Reaction cavity of multi-airflow metallorganic chemical vapor deposition apparatus Download PDFInfo
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- CN201284372Y CN201284372Y CNU2008201530293U CN200820153029U CN201284372Y CN 201284372 Y CN201284372 Y CN 201284372Y CN U2008201530293 U CNU2008201530293 U CN U2008201530293U CN 200820153029 U CN200820153029 U CN 200820153029U CN 201284372 Y CN201284372 Y CN 201284372Y
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Abstract
The utility model relates to a reaction cavity of multiple airflow metal organic chemical vapor deposition equipment, which mainly comprises three paths of reactive gas inlet pipes, a spraying nozzle, a spraying cooling cavity, a slide plate, a reaction cavity, a cooling cavity of the reaction cavity, a heater and a rectifying cover. The reaction cavity is characterized in that multiple paths of reactive gas inlets are accessed from the top end of the reaction cavity; the upper part of the reaction cavity is provided with a spray port and a spray cooling cavity, and the sliding plate is arranged below the reaction cavity; horizontal gas laminar flows and vertical spray gases are combined to form a gas flow field; and the lower part of the sliding plate is provided with a heater and an exhaust port. The reaction cavity has the advantages that the reaction cavity has the gas flow field combined by the horizontal gas laminar flows and the vertical spray gases, thus not only being capable of mixing the reactive gases evenly, but also reducing the local turbulence caused by the rebound and backflow of the spray gases, simultaneously, effectively restraining the hot eddy in a reaction chamber, improving the uniformity of the epitaxial growth of the materials and solving the problem of cleaning of the attached particles in the cavity body.
Description
Technical field
The utility model relates to a kind of vapor deposition apparatus of compound semiconductor epitaxial growth usefulness, particularly a kind of reaction cavity of multiple air-flow metal-organic chemical vapor deposition equipment.
Background technology
Metal-organic chemical vapor deposition equipment (MOCVD) technology collection precision optical machinery, semiconductor material, vacuum electronic, hydromeehanics, optics, chemistry, computer is multidisciplinary is one, be a kind of level of automation height, cost an arm and a leg, high-end semiconductor material, photoelectron specific equipment that the technology integrated level is high.MOCVD is a kind of non-equilibrium growing technology, its working mechanism is by the source gas transmission, makes to carry out heat scission reaction on III family alkylate (as TMGa, TMIn, TMAl, two luxuriant magnesium etc.) and the substrate of V family hydride (as AsH3, PH3, NH3 etc.) in reaction chamber.Growth velocity with regard to epitaxial material is more moderate, can more accurately control thickness.Its component and growth velocity are by the source flux decision of the air-flow of various heterogeneities and accurately control.MOCVD is as the epitaxially grown Perfected process of compound semiconductor materials; have quality height, good stability, good reproducibility, technology flexibly, can the mass-producing volume production etc. characteristics; become industry and produced the key core equipment of semiconductor photoelectric device and microwave device, had broad application prospects and industrialization value.
Reaction cavity is the most crucial part of whole M OCVD equipment, has determined the performance of entire equipment.And the geometry of cavity and size are the primary factor that influences deposition properties because its directly influence gas in the chamber intravital flow trace, and the transporting and diffusion way of reactant gases.A kind of more perfect gas delivery scheme is being sought always by research institution and equipment design manufacturers, have the representative gases mode of movement of reaction cavity now or be the center radiation formula, as Aixtron equipment, it is vertical shower type, as ThomasSwan equipment, the gas delivery of center radiation formula need be furnished with the atwirl mode of title egative film and be realized the even of thin film deposition, the device fabrication complexity, and also stability is subjected to certain limitation.And the gas delivery of spray-type claims can not form the good horizontal laminar flow regime because all gas delivery all adopt and carry vertically downward at the end, and the effect of growth further improvement is limited to.
Summary of the invention
The purpose of this utility model is at the defective that exists in the prior art, and a kind of reaction cavity of multiple air-flow metal-organic chemical vapor deposition equipment is provided.
The utility model adopts the multipath gas carrying method, by center radiation and vertical combining of spraying, the partition ratio of multiple gas concentration, flow is regulated, reach uniformity of thin film deposition, both avoided claiming the compound movement of egative film high temperature rotation, can keep claiming the stable horizontal laminar flow shape body that requires again, thereby the stability in reflection chamber strengthens greatly at the end.Because in the design of growth technique, have the parameter of multipath gas can supply to regulate, the technological flexibility of growing film seems more superior than the gas delivery mode of existing installation.
The utility model mainly comprises: reactant gases A intake ducting 1, reactant gases B intake ducting 2, reactant gases C intake ducting 3, reactant gases D intake ducting 4, mouth spray 8, spray cooling chamber 6, spray cooling liquid inlet 16, spray cooling liquid outlet 15, slide glass dish 10, substrate 11, reaction chamber 14, reaction chamber cooling chamber 21, reaction chamber cooling liquid inlet 18, reaction chamber cooling liquid outlet 19, nose cone 20, venting port 13, cushion chamber 7, shell cavity 17, cushioning fender 5, bolster 9, well heater 12, it is characterized in that described reactant gases A intake ducting 1 inserts from reaction chamber 14 tops, the below of reaction chamber 14 is provided with slide glass dish 10, the top of slide glass dish 10 is provided with mouth spray 8 and spray cooling chamber 6, reactant gases B intake ducting 2, the intake ducting 4 of reactant gases C intake ducting 3 and reactant gases D is coaxial to be wrapped on the outer wall of reactant gases A intake ducting 1,2 outlets of reactant gases B intake ducting are positioned at reactant gases A outlet top, 3 outlets of reactant gases C intake ducting are positioned at reactant gases B outlet top, the outlet of reactant gases D is positioned at cushion chamber 7 tops, the periphery of its central axis, spray cooling liquid inlet 16 and spray cooling liquid outlet 15 are installed between reaction chamber 14 and the cushion chamber 7, well heater 12 is separated by nose cone 20 with reaction chamber 14, be provided with one deck reaction chamber cooling chamber 21 in the shell cavity 17, slide glass dish 10 bottoms are provided with well heater 12, and venting port 13 is positioned at the bottom of reaction chamber 14.
Flow into gas A, B, the C that forms the horizontal radial radius flow in the reaction chambers 14 and combine from mouth spray 8 effusive perpendicular flow gas D from center intake ducting 1,2,3 from inlet mouth 4 inflows, the distribution of gaseous species and flow by different pipelines reaches the controlled purpose of technology.Gas A, the B, C, the D that participate in reaction can be arranged to different sorts, flow or flow velocity, different concns to reach the optimization requirement of technology.
The utility model has the advantages that reaction chamber has the air velocity distribution that the spray of the laminar flow of horizontal direction and vertical direction combines, can make reactant gases mix, reduce pre-reaction, increased conversion zone, can reduce spray gas bounce-back backflow again and cause local turbulence, thereby form good laminar flow, effectively suppressed simultaneously the hot eddy current in the reaction chamber again, improve greatly the material epitaxy growth homogeneity, to form precipitous interface even, also solved to adhere to particulate in the cavity and clean problem.This reaction cavity design has extensibility simultaneously.
Description of drawings
The structural representation of Fig. 1 reaction cavity of the present utility model;
The structural representation of another reaction cavity of Fig. 2 embodiment two of the present utility model.
1 reactant gases A intake ducting, 2 reactant gases B intake ductings, 3 reactant gases C intake ductings, 4 reactant gases D intake ductings, 5 cushioning fenders, 6 spray cooling chambers, 7 cushion chambers, 8 mouth sprays, 9 bolsters, 10 slide glass dishes, 11 substrates, 12 well heaters, 13 venting ports, 14 reaction chambers, 15 spray cooling liquid outlets, 16 spray cooling liquid inlets, 17 shell cavities, 18 reaction chamber cooling liquid inlets, 19 reaction chamber cooling liquid outlets, 20 nose cones, 21 reaction chamber cooling chambers
Embodiment
Further specify embodiment of the present utility model below in conjunction with accompanying drawing:
Embodiment one
Referring to Fig. 1, reactant gases A enters reaction chamber 14 from intake ducting 1, the along continuous straight runs radial flow.The outlet below of reactant gases intake ducting 1 is equipped with slide glass dish 10, the top of slide glass dish 10 is provided with mouth spray 8 and spray cooling chamber 6, distance between slide glass dish 10 and the mouth spray 8 can be regulated, the upper surface of slide glass dish 10 is provided with substrate 11, and slide glass dish 10 is made as fixed or rotary according to back shaft 9.Reactant gases B intake ducting 2, the intake ducting 4 of reactant gases C intake ducting 3 and reactant gases D is coaxial to be wrapped on the outer wall of reactant gases A intake ducting 1, intake ducting 2 outlets of reactant gases B are positioned at reactant gases A outlet top, and intake ducting 3 outlets of reactant gases C are positioned at reactant gases B outlet top.Reactant gases B is that central intake pipe road middle casing enters reaction chamber 14 from intake ducting 2, and the top along continuous straight runs that is positioned at substrate 11 flows.Reactant gases C is that central intake pipe road outer layer sleeve enters reaction chamber 14 from intake ducting 3, is positioned at reactant gases B outlet top along continuous straight runs and flows.The exit portion pipeline of reactant gases A intake ducting 1, reactant gases B intake ducting 2, reactant gases C intake ducting 3 is horizontal, exports to be the beak shape.The outlet of reactant gases D is positioned at the top of cushion chamber 7, it is the periphery of cushion chamber 7 central axis, spray Linkou County 8 is perpendicular to slide glass dish 10, spray Linkou County is shaped as hole or slit, the quantity of spray Linkou County is designed to certain quantity according to the needs of technology, the distribution mode of spray Linkou County 8 is circle distribution or array distribution or distribution or adopts special the distribution according to processing requirement, spray Linkou County 8 is parallel with the top of reaction chamber 14 or protrude in the top of reaction chamber 14, reactant gases D enters cushion chamber 7 from reactant gases D intake ducting 4, vertically enter reaction chamber 14 via spray Linkou County 8 then, with reactant gases A, reactant gases B and reactant gases C hybrid reaction above substrate 11.Spray cooling chamber 6 is installed between reaction chamber 14 and the cushion chamber 7, and spray cooling liquid inlet 16 passes shell cavity 17 with spray cooling liquid outlet 15 and is connected with the two ends of spray cooling chamber 6 respectively.Reaction cooling chamber 21 is installed in shell cavity 17 the insides, and reaction chamber cooling liquid inlet 18 is installed on shell cavity 17 bottoms respectively with reaction chamber cooling liquid outlet 19 and is connected with reaction chamber cooling chamber 21 with top.Between nose cone 20 installations and reaction chamber 14 and the well heater 12, nose cone 20 is provided with aperture and is convenient to the discharge of well heater cooling gas.Well heater 12 is equipped with in slide glass dish 10 bottoms, and well heater 12 is resistance heater or adopts radio-frequency induction heater that venting port 13 is located at the bottom of reaction chamber 14.
Flowing into gas A, the B, C and the gas D from inlet mouth 4 inflows from mouth spray 8 effusive perpendicular flow that form the horizontal radial radius flow in the reaction chamber 14 from center intake ducting 1,2,3 combines, the distribution of gaseous species and flow by different pipelines reaches the controlled purpose of technology.Gas A, the B, C, the D that participate in reaction can be arranged to different sorts, flow or flow velocity, different concns to reach the optimization requirement of technology.
Utilization ratio requirement according to kind, reaction needed and certain reactant gases of reactant gases, reactant gases A and reactant gases C can be made as gas of the same race or gas not of the same race, or gas of the same race but concentration difference, reactant gases B and reactant gases D can be made as gas of the same race or gas not of the same race, or gas of the same race but concentration difference.Reactant gases A and reactant gases C surround with thorough mixing reactant gases B, reach the purpose of process adjustments, can improve the utilization ratio of reactant gases B, also can reduce pre-reaction, the augmenting response zone.
Embodiment two
Embodiment two is identical with embodiment one, and the centre of different is cushion chamber 7 can be provided with a cushioning fender 5 according to design requirements, changes the flow pattern that reactant gases D enters spray Linkou County 8 with this, reaches the uniform purpose of spray flow velocity, referring to Fig. 2.
Claims (6)
1. the reaction cavity of a multiple air-flow metal-organic chemical vapor deposition equipment, mainly comprise: reactant gases A intake ducting (1), reactant gases B intake ducting (2), reactant gases C intake ducting (3), reactant gases D intake ducting (4), mouth spray (8), spray cooling chamber (6), spray cooling liquid inlet (16), spray cooling liquid outlet (15), slide glass dish (10), substrate (11), reaction chamber (14), reaction chamber cooling chamber (21), reaction chamber cooling liquid inlet (18), reaction chamber cooling liquid outlet (19), nose cone (20), venting port (13), cushion chamber (7), shell cavity (17), cushioning fender (5), bolster (9), well heater (12), it is characterized in that described reactant gases A intake ducting (1) inserts from reaction chamber (14) top, the below of reaction chamber (14) is provided with slide glass dish (10), the top of slide glass dish (10) is provided with mouth spray (8) and spray cooling chamber (6), reactant gases B intake ducting (2), the intake ducting (4) of reactant gases C intake ducting (3) and reactant gases D is coaxial to be wrapped on the outer wall of reactant gases A intake ducting (1), reactant gases B intake ducting (2) outlet is positioned at reactant gases A outlet top, reactant gases C intake ducting (3) outlet is positioned at reactant gases B outlet top, the outlet of reactant gases D is positioned at cushion chamber (7) top, the periphery of its central axis, spray cooling liquid inlet (16) and spray cooling liquid outlet (15) are installed between reaction chamber (14) and the cushion chamber (7), well heater (12) is separated by nose cone (20) with reaction chamber (14), be provided with one deck reaction chamber cooling chamber (21) in the shell cavity (17), slide glass dish (10) bottom is provided with well heater (12), and venting port (13) is positioned at the bottom of reaction chamber (14).
2. the reaction cavity of multiple air-flow metal-organic chemical vapor deposition equipment according to claim 1 is characterized in that the centre of described cushion chamber (7) is provided with cushioning fender (5).
3. the reaction cavity of multiple air-flow metal-organic chemical vapor deposition equipment according to claim 1, it is characterized in that described spray Linkou County (8) is perpendicular to slide glass dish (10), spray Linkou County (8) is shaped as hole or slit, its distribution mode is circle distribution or array distribution or distribution, and spray Linkou County (8) is parallel with the top of reaction chamber (14) or protrude in the top of reaction chamber (14).
4. the reaction cavity of multiple air-flow metal-organic chemical vapor deposition equipment according to claim 1, it is characterized in that described regulate and mouth spray between the upper surface of slide glass dish (10) of distance be provided with substrate (11), slide glass dish (10) is set to fixedly pattern or rotation pattern according to back shaft (9).
5. the reaction cavity of multiple air-flow metal-organic chemical vapor deposition equipment according to claim 1 is characterized in that described well heater (12) is resistive heating or radio-frequency induction heating.
6. the reaction cavity of multiple gas organometallics chemical vapor depsotition equipment according to claim 1, the exit portion pipeline that it is characterized in that described reactant gases A intake ducting (1), reactant gases B intake ducting (2), reactant gases C intake ducting (3) is horizontal, exports to be the beak shape.
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| Application Number | Priority Date | Filing Date | Title |
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| CNU2008201530293U CN201284372Y (en) | 2008-09-12 | 2008-09-12 | Reaction cavity of multi-airflow metallorganic chemical vapor deposition apparatus |
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| CNU2008201530293U CN201284372Y (en) | 2008-09-12 | 2008-09-12 | Reaction cavity of multi-airflow metallorganic chemical vapor deposition apparatus |
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Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102021530A (en) * | 2009-09-11 | 2011-04-20 | 甘志银 | Reaction chamber of multiple-gas coupling metal metallorganic chemical vapor deposition equipment |
| CN102383106A (en) * | 2010-09-03 | 2012-03-21 | 甘志银 | Metal organic chemical vapour deposition reaction chamber for fast removing residual reaction gas |
| CN103014662A (en) * | 2011-09-20 | 2013-04-03 | 甘志银 | Gas path apparatus for precisely controlling reactant flow rate in chemical vapor deposition equipment |
| CN103205733A (en) * | 2013-04-27 | 2013-07-17 | 南昌黄绿照明有限公司 | Vertical airflow type MOCVD (Metal-organic Chemical Vapor Deposition) spray head device with multiple gas mixing chambers |
| CN103361633A (en) * | 2012-04-01 | 2013-10-23 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Gas inlet device, reaction cavity and plasma processing equipment |
| CN104264217A (en) * | 2014-10-20 | 2015-01-07 | 佛山市中山大学研究院 | MOCVD (metal organic chemical vapor deposition) reaction device for preparing semiconductor epitaxial wafers |
| CN105256369A (en) * | 2015-10-20 | 2016-01-20 | 中国电子科技集团公司第四十八研究所 | High-temperature-resistant horizontal multi-layer gas inlet device for SiC epitaxy |
| CN106757326A (en) * | 2017-01-25 | 2017-05-31 | 浙江理工大学 | Epitaxial growth unit and application for manufacturing the one chip epitaxial furnace of silicon epitaxial wafer |
| CN106811736A (en) * | 2016-12-27 | 2017-06-09 | 南昌大学 | A kind of chemical vapor deposition unit |
| CN111058091A (en) * | 2019-12-30 | 2020-04-24 | 瀚天天成电子科技（厦门）有限公司 | T-shaped epitaxial furnace structure |
| CN113235068A (en) * | 2021-04-07 | 2021-08-10 | 深圳市华星光电半导体显示技术有限公司 | Chemical vapor deposition device |
| CN115896751A (en) * | 2023-01-30 | 2023-04-04 | 拓荆科技(上海)有限公司 | Cavity-divided spray plate |
| CN117737687A (en) * | 2024-02-09 | 2024-03-22 | 上海谙邦半导体设备有限公司 | Gas mixing structure and gas mixing method for tungsten deposition equipment |
-
2008
- 2008-09-12 CN CNU2008201530293U patent/CN201284372Y/en not_active Expired - Lifetime
Cited By (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102021530A (en) * | 2009-09-11 | 2011-04-20 | 甘志银 | Reaction chamber of multiple-gas coupling metal metallorganic chemical vapor deposition equipment |
| CN102383106A (en) * | 2010-09-03 | 2012-03-21 | 甘志银 | Metal organic chemical vapour deposition reaction chamber for fast removing residual reaction gas |
| CN102383106B (en) * | 2010-09-03 | 2013-12-25 | 甘志银 | Metal organic chemical vapour deposition reaction chamber for fast removing residual reaction gas |
| CN103014662A (en) * | 2011-09-20 | 2013-04-03 | 甘志银 | Gas path apparatus for precisely controlling reactant flow rate in chemical vapor deposition equipment |
| CN103361633A (en) * | 2012-04-01 | 2013-10-23 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Gas inlet device, reaction cavity and plasma processing equipment |
| CN103361633B (en) * | 2012-04-01 | 2015-07-01 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Gas inlet device, reaction cavity and plasma processing equipment |
| CN103205733A (en) * | 2013-04-27 | 2013-07-17 | 南昌黄绿照明有限公司 | Vertical airflow type MOCVD (Metal-organic Chemical Vapor Deposition) spray head device with multiple gas mixing chambers |
| CN104264217A (en) * | 2014-10-20 | 2015-01-07 | 佛山市中山大学研究院 | MOCVD (metal organic chemical vapor deposition) reaction device for preparing semiconductor epitaxial wafers |
| CN105256369A (en) * | 2015-10-20 | 2016-01-20 | 中国电子科技集团公司第四十八研究所 | High-temperature-resistant horizontal multi-layer gas inlet device for SiC epitaxy |
| CN106811736A (en) * | 2016-12-27 | 2017-06-09 | 南昌大学 | A kind of chemical vapor deposition unit |
| CN106811736B (en) * | 2016-12-27 | 2019-03-05 | 南昌大学 | A kind of chemical vapor deposition unit |
| CN106757326A (en) * | 2017-01-25 | 2017-05-31 | 浙江理工大学 | Epitaxial growth unit and application for manufacturing the one chip epitaxial furnace of silicon epitaxial wafer |
| CN111058091A (en) * | 2019-12-30 | 2020-04-24 | 瀚天天成电子科技（厦门）有限公司 | T-shaped epitaxial furnace structure |
| CN113235068A (en) * | 2021-04-07 | 2021-08-10 | 深圳市华星光电半导体显示技术有限公司 | Chemical vapor deposition device |
| CN113235068B (en) * | 2021-04-07 | 2023-09-01 | 深圳市华星光电半导体显示技术有限公司 | Chemical vapor deposition device |
| CN115896751A (en) * | 2023-01-30 | 2023-04-04 | 拓荆科技(上海)有限公司 | Cavity-divided spray plate |
| CN117737687A (en) * | 2024-02-09 | 2024-03-22 | 上海谙邦半导体设备有限公司 | Gas mixing structure and gas mixing method for tungsten deposition equipment |
| CN117737687B (en) * | 2024-02-09 | 2024-05-10 | 上海谙邦半导体设备有限公司 | Gas mixing structure and gas mixing method for tungsten deposition equipment |
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Legal Events
| Date | Code | Title | Description |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: GUANGDONG ZHAOXIN SEMICONDUCTOR EQUIPMENT MANUFACT Free format text: FORMER OWNER: GAN ZHIYIN Effective date: 20091030 |
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| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20091030 Address after: Guangdong province Foshan City Nanhai Pingzhou Shawei Industrial Avenue South West of the first floor of building C building, zip code: 528251 Patentee after: Guangdong RealFaith Semiconductor Equipment Co., Ltd. Address before: Hubei city of Wuhan province Luo Yu Road, No. 1037, zip code: 430074 Patentee before: Gan Zhiyin |
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| CX01 | Expiry of patent term |
Granted publication date: 20090805 |
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| CX01 | Expiry of patent term |