CN103205733A - Vertical airflow type MOCVD (Metal-organic Chemical Vapor Deposition) spray head device with multiple gas mixing chambers - Google Patents
Vertical airflow type MOCVD (Metal-organic Chemical Vapor Deposition) spray head device with multiple gas mixing chambers Download PDFInfo
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- CN103205733A CN103205733A CN2013101516662A CN201310151666A CN103205733A CN 103205733 A CN103205733 A CN 103205733A CN 2013101516662 A CN2013101516662 A CN 2013101516662A CN 201310151666 A CN201310151666 A CN 201310151666A CN 103205733 A CN103205733 A CN 103205733A
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Abstract
The invention discloses a vertical airflow type MOCVD (Metal-organic Chemical Vapor Deposition) spray head device with multiple gas mixing chambers. The vertical airflow type MOCVD spray head device comprises a cylindrical closed shell consisting of a top plate, side walls and a bottom plate, wherein the interior of the closed housing is divided into a sealed cavity and a water-cooling cavity by a middle-layer plate; and a cooling water inlet tube and a cooling water outlet tube are arranged on the side walls corresponding to the two ends of the water-cooling cavity, respectively. The vertical airflow type MOCVD spray head device with the multiple gas mixing chambers is characterized in that the sealed cavity is divided into two or more independent and fan-shaped gas mixing chambers by a vertical isolating body; a gas mixing chamber gas inlet pipeline is formed on the side walls or the top plate corresponding to each gas mixing chamber, respectively; and a gas inlet fine hole is communicated with each gas mixing chamber and the MOCVD reaction chamber. The vertical airflow type MOCVD spray head device with the multiple gas mixing chambers can be used for sufficiently mixing two reaction gases before the two reaction gases selectively enter the reaction chamber or can be used for entering the two reaction gases in the reaction chamber in a mutually independent manner, so that the normal transportation of the gases can be ensured, and each single layer can be grown in the most-suitable gas mixing status while a multi-layer structure film material can be grown. The vertical airflow type MOCVD spray head device with the multiple gas mixing chambers is especially beneficial to manufacturing of III-V-family nitride semiconductor materials of high-aluminum components of an ultraviolet apparatus.
Description
Technical field
The present invention relates to the metal-organic chemical vapor deposition equipment (MOCVD) for semiconductor material growing, especially relate to a kind of many mixing chambers vertical gas flow pattern MOCVD nozzle arrangement.
Background technology:
Metal-organic chemical vapor deposition equipment (Metal Organic Chemical Vapor Deposition, MOCVD) equipment is to be the vapor deposition apparatus of source material with the organometallics, mainly be the compound semiconductor materials such as zinc oxide for gan, gallium arsenide and the II-VI family of growth III-V family, adopt MOCVD can obtain very precipitous material interface, have clear superiority at aspects such as preparation superlattice and quantum well, MOCVD is used for semiconductor optoelectronic industries such as LED on a large scale at present.
The source material of MOCVD can be divided into two big classes usually: a class is III family or II family; Another kind of is V family and VI family, more than two class source materials all feed nozzle arrangement with the form of gaseous state, but at room temperature this two classes gas is easy to react mutually after mixing, and the transporting and material growth generation adverse influence source material of some pre-reaction meeting wherein, such as: during the growth P-type GaN material, usually adopt trimethyl-gallium (TMGa) as Ga source, NH
3As the N source, two luxuriant magnesium (Cp
2Mg) as doped source, and two luxuriant magnesium and NH
3It at room temperature is solid-state adducts that reaction can generate, and these adductss can be adsorbed on places such as gas transport pipe side wall, have hindered normal gas transport and mass transfer.For the nitride material of high Al component, as AlN or AlGaN etc., Al source and NH in process of growth
3Pre-reaction very big, can cause bigger disadvantageous effect to AlN or AlGaN quality; Simultaneously, difficult in epi-layer surface migration behind Al atom and the N atomic bonding, surface topography and the crystal mass of AlN or AlGaN caused very big disadvantageous effect.
At present, nearly all type of production MOCVD in usefulness makes by Axitron or Veeco company, and the common ground of the MOCVD that is produced by these two companies is two class reactant gasess separately to be fed reaction chamber (avoid as two luxuriant magnesium and NH to guarantee normal gas transport
3Formed solid adduct), adopts accurate punching technology (Axitron) or high speed rotating substrate, pallet (Veeco) then, make the component of substrate top air-flow more even, thereby guarantee the homogeneity of material growth.Yet in growth during for the preparation of the III of the high aluminium component of ultraviolet device-V hi-nitride semiconductor material, aforementioned two kinds of MOCVD(Axitron and Veeco company) reaction tubes all is not suitable for, be difficult to obtain high-quality AlN or AlGaN material, major cause is Al source and NH
3Between difficult in the epi-layer surface migration behind strong pre-reaction and Al atom and the N atomic bonding.
Summary of the invention:
The object of the present invention is to provide a kind of many mixing chambers vertical gas flow pattern MOCVD nozzle arrangement.It can selectivity allows two class reactant gasess fully mix before entering the reaction chamber prerequisite or the separate reaction chamber that enters, for gas transport and the material growth of MOCVD provides multiple mode; It at first can guarantee normally transporting of gas, Al and NH in the time of can reducing even eliminate growing AIN or AlGaN material greatly again
3Between pre-reaction, and make Al keep the simple substance state in epi-layer surface within a certain period of time, improve Al greatly in the rate of migration of epi-layer surface, thereby be particularly conducive to growth for the preparation of the III-V hi-nitride semiconductor material of the high aluminium component of ultraviolet device.
A kind of many mixing chambers vertical gas flow pattern MOCVD nozzle arrangement, comprise: one by top board, sidewall and base plate constitute columniform closure casing, this closure casing and following MOCVD reaction chamber are connected as a single entity, the inside of closure casing is separated into annular seal space and the waterway of two independences and sealing mutually by la m, annular seal space is positioned at the top of la m, be positioned at the la m below, adjacent with the MOCVD reaction chamber is waterway, corresponding side walls is separately installed with cooling water inlet pipe and cooling water outlet pipe at the waterway two ends, feature is: annular seal space is separated into more than two independence and is fan-shaped mixing chamber by vertical isolated body, is separately installed with the mixing chamber intake ducting that one or more is used for transporting reactant gases in each mixing chamber corresponding side walls or top board; Vertical air inlet pore runs through la m from the top down successively, by waterway, run through base plate, be communicated with each mixing chamber and MOCVD reaction chamber.
Preferably, the volume of each mixing chamber is identical, and the number of mixing chamber is even number.
Isolated body is solid dividing plate or the separate cavities of hollow, at sidewall or the top board of separate cavities one or more intake ducting is installed, and is distributed with the air inlet pore at the la m that joins with separate cavities.
The air inlet pore evenly distributes on la m, and the main body aperture of air inlet pore (removing the part that is embedded in waterway chamber wall) is immersed in the waterway.
The vertical range of the substrate in the outlet of air inlet pore and the MOCVD reaction chamber is between 5mm-100mm.
Water coolant flows into waterway from cooling water inlet pipe, take away the heat that is transmitted to base plate and air inlet pore by the MOCVD reaction chamber, flow out from cooling water outlet pipe then, water coolant so circulates, can guarantee that whole nozzle arrangement is in low-temperature condition, to reduce the deposition that causes in the internal surface of nozzle arrangement and the generation pre-reaction of pipeline internal cause.
Gas transport process of the present invention is: at first reactant gases is admitted to each mixing chamber through the mixing chamber intake ducting, reaction gas in each mixing chamber is known from experience in mixing chamber separately diffusion or is mixed then, and final reaction gas sprays into the MOCVD reaction chamber by the air inlet pore of mixing chamber below separately.After entering the MOCVD reaction chamber, because substrate is along with the substrate bracket disc spins, thereby the top that makes substrate just can contact the reactant gases from the different blended air chamber in short period accumulation scope, thereby there are ionic concn uniformly, the epitaxial material that substrate can obtain to have good uniformity in the top that has guaranteed substrate.Can enter reaction chamber by the air inlet pore in that the gas of separate cavities is the same with reactant gases in the mixing chamber.
Be example with two mixing chambers (namely having two fan-shaped closure chamber I district C1 and II district C2) vertical gas flow pattern MOCVD nozzle arrangement below, further gas transport process of the present invention and characteristics be elaborated:
The present invention can be according to the characteristics of the source material that specifically transports, optionally allow two class reactant gasess before entering MOCVD reaction chamber prerequisite, fully mix or enter the MOCVD reaction chamber independently of each other and (realize that aforementioned functional only needs at the mixing chamber intake ducting that links to each other with each mixing chamber rational under meter to be set, valve, divide pipeline etc., when growth multilayered structure thin-film material, for different individual layers, enter each mixing chamber by the by-pass valve control under meter, with each individual layer of growing of optimal gas admixture separately) with just can easily controlling the differential responses gas-selectively;
If the two class reactant gasess of MOCVD some pre-reaction product at room temperature is gaseous substance, the MOCVD reaction chamber can be transported to smoothly, and its pre-reaction can not produce bigger disadvantageous effect to the material growth, the N-type of for example growing GaN material, then two class reactant gasess all can be fed I district and II district, two class reactant gasess have carried out sufficient pre-mixing before entering the MOCVD reaction chamber like this, have obtained component air-flow very uniformly, and then can obtain the good epitaxial material of homogeneity;
If the two class reactant gasess of MOCVD some pre-reaction product at room temperature is solid matter, can stick on the wall of chamber, be difficult to be transported to the MOCVD reaction chamber, growth P-type GaN material for example, then the present invention can feed a class reactant gases in the I district, and another kind of reactant gases feeds the II district, and namely two class reactant gasess are separate sprays into the MOCVD reaction chamber, avoid pre-reaction between the two, thereby guaranteed normal gas transport; Then by substrate rotation, make the top of substrate in short time integral scope, just can contact reactant gases from the different blended air chamber, thereby there are ionic concn uniformly, the epitaxial material that can obtain to have good uniformity in the top that has guaranteed substrate.
For the nitride material of high Al component, as AlN or AlGaN etc., Al source and NH in process of growth
3Pre-reaction very big, AlN or AlGaN quality are caused bigger disadvantageous effect; Simultaneously, difficult in epi-layer surface migration behind Al atom and the N atomic bonding, surface topography and the crystal mass of AlN or AlGaN caused very big disadvantageous effect.Therefore, when the nitride material of the high Al component of growth, the III clan source is fed different mixing chambers respectively with the V clan source; Simultaneously, because outlet and the distance between the substrate of air inlet pore are shorter, even after entering the MOCVD reaction chamber, phase mutual diffusion between III clan source and the V clan source is also fainter, both are the vertical substrate surface that rushes at almost, folding turn 90 degrees from the side of MOCVD reaction chamber and discharges then, thereby has almost formed independent III clan source district and V clan source district in the MOCVD reaction chamber, and this reduces even Al and NH when having eliminated growing AIN or AlGaN material greatly
3Between pre-reaction.After source gas entered the MOCVD reaction chamber, if the substrate pallet in the MOCVD reaction chamber maintains static, then the substrate in the III clan source district only contacted with the III clan source, and the substrate in the V clan source district only contacts with the V clan source; Uniform rotation when the substrate pallet, substrate will go round and begin again passes through III clan source district and V clan source district successively, thereby make the Al atom within a certain period of time (in III clan source district) keeping simple substance state (liquid Al in epi-layer surface, within a certain period of time not with the N atomic bonding), improve the migration of Al in epi-layer surface greatly, be particularly conducive to growth for the preparation of the III-V hi-nitride semiconductor material of the high aluminium component of ultraviolet device.
In order to guarantee the homogeneity of material, the substrate pallet need reach certain speed of rotation, and preferably, its speed of rotation is 100 commentaries on classics/min～300 commentaries on classics/min, and namely substrate has passed through two class source regions in succession in the time of 0.2s～0.6s; When the number of mixing chamber during more than two, preferably, adjacent mixing chamber feeds inhomogeneous reactant gases, even the substrate rotating speed is constant like this, the time that substrate has passed through two class source regions also becomes shorter, is conducive to improve the homogeneity of material growth.
In addition, when the III-V hi-nitride semiconductor material of growth high aluminium component, can also adopt the isolated body of isolating cavate to separate each mixing chamber, in the separate cavities chamber, feed the carrier gas in MO source then, thereby suppressed the diffusion of adjacent two class reactant gasess more, can improve III family metallic element in the rate of migration of substrate surface.
The present invention is by being separated into annular seal space more than two independence and being fan-shaped mixing chamber, and the air inlet pore is communicated with each mixing chamber and MOCVD reaction chamber, separate cavities and MOCVD reaction chamber, can allow two class reactant gasess fully mix before entering the reaction chamber prerequisite according to the material selectivity of concrete growth or the separate reaction chamber that enters, the present invention at first can guarantee normally the transporting of gas (two luxuriant magnesium and NH such as can avoid the growth P-type GaN material time thus
3Formed solid adduct); Secondly Al and NH in the time of can reducing even eliminate growing AIN or AlGaN material greatly
3Between pre-reaction, and make Al keep simple substance state (liquid Al in epi-layer surface within a certain period of time, within a certain period of time not with the N atomic bonding), improve the rate of migration of Al in epi-layer surface greatly, be particularly conducive to growth for the preparation of the III-V hi-nitride semiconductor material of the high aluminium component of ultraviolet device.Simultaneously, III-V family material or the II-VI family material of the non-high aluminium component of all right growing high-quality of the present invention.
Description of drawings:
Fig. 1 is embodiment 1 cross-sectional schematic;
Fig. 2 is that the A-A of embodiment 1 is to upward view;
Fig. 3 is that the B-B of embodiment 1 is to vertical view;
Fig. 4 is in embodiment 1, when two class reactant gasess feed reaction chamber independently of each other, and the APPROXIMATE DISTRIBUTION synoptic diagram of two class reactant gasess in the reaction chamber;
Fig. 5 is that the A-A of embodiment 2 is to upward view;
Fig. 6 is that the B-B of embodiment 2 is to vertical view;
Fig. 7 is that the A-A of embodiment 3 is to upward view.
Wherein: 1-sidewall, 2
-Top board, 3-la m, 4-base plate, 5-annular seal space, the 6-isolated body, 7-closure casing, 8-air inlet pore, 9-waterway, 10-mixing chamber intake ducting, 11-cooling water outlet pipe, 12-cooling water inlet pipe, 13-MOCVD reaction chamber, 14-substrate, 15-substrate pallet, the rotating shaft of 16-substrate pallet, 17-reaction chamber wall, 18-separate cavities, 19-separate cavities intake ducting, C1-mixing chamber I district, C2-mixing chamber II district, C3-mixing chamber III district, C4-mixing chamber IV district.
Embodiment:
Below in conjunction with embodiment and contrast accompanying drawing the present invention is further detailed.
1: two mixing chamber of embodiment
A kind of many mixing chambers vertical gas flow pattern MOCVD nozzle arrangement, comprise: one by top board 2, sidewall 1 and base plate 4 constitute columniform closure casing 7, this closure casing 7 is connected as a single entity with following MOCVD reaction chamber 13, the inside of closure casing 7 is separated into annular seal space 5 and the waterway 9 of two independences and sealing mutually by la m 3, annular seal space 5 is positioned at the top of la m 3, be positioned at la m 3 belows, adjacent with MOCVD reaction chamber 13 is waterway 9, be separately installed with cooling water inlet pipe 12 and cooling water outlet pipe 11 in waterway 9 two ends corresponding side walls, annular seal space 5 is separated into two independences by vertical isolated body 6, volume is identical and be fan-shaped mixing chamber C1 and C2, is separately installed be used to a mixing chamber intake ducting 10 that transports reactant gases at mixing chamber C1 and C2 corresponding side walls 1; Vertical air inlet pore 8 runs through la m 3 from the top down successively, by waterway 9, run through base plate 4, be communicated with two mixing chamber I district C1 and MOCVD reaction chamber 13, mixing chamber II district C2 and MOCVD reaction chamber 13.
Isolated body 5 is solid dividing plate.
The vertical range of the substrate 14 in the outlet of air inlet pore 8 and the MOCVD reaction chamber 13 is between 5mm-100mm.
Embodiment 2:
The structure of the structure of embodiment 2 and embodiment 1 is basic identical, and difference is:
Isolated body 6 is the isolation cavate of hollow, at the sidewall 1 of separate cavities 18 intake ducting 19 is installed, and is distributed with air inlet pore 8 at the la m 3 that joins with separate cavities 18.
Can feed the carrier gas in MO source in separate cavities 18, the same with reactant gases in the mixing chamber, carrier gas will enter MOCVD reaction chamber 13 by air inlet pore 8.Carrier gas will be across by isolation 18 carrier gas that spray between the reactant gases that the reactant gases that is sprayed into by mixing chamber I district C1 and II district C2 spray into after feeding MOCVD reaction chamber 13, thereby can slow down the diffusion between the above-mentioned reactant gases.
Embodiment 3:
The structure of the structure of embodiment 3 and embodiment 1 is basic identical, and difference is:
Isolated body 5 is separated into four district: C1, C2, C3 and C4 with annular seal space 5.
Be that solid-state (for example growth P-type GaN) or its pre-reaction are when being unfavorable for material growth (nitride of the high aluminium component of for example growing) at the pre-reaction product of two class reactant gasess, adjacent mixing chamber is fed inhomogeneous reactant gases, then substrate 14 turns over two mixing chambers, is just representing the flow area that substrate 14 has passed through two class reactant gasess continuously; The number of mixing chamber is more many, then needs the angle of rotating more little, the time more short (the substrate rotating speed is constant) that needs, thus make substrate 14 tops in the shorter time, just can obtain ionic concn uniformly, can improve the homogeneity of material growth.In order to satisfy the requirement that adjacent mixing chamber feeds the inhomogeneity reactant gases, the number of mixing chamber is required to be even number.
Be to be understood that to be that above-described embodiment is just to explanation of the present invention, rather than limitation of the present invention, anyly do not exceed the replacement of the unsubstantiality in the connotation scope of the present invention or the innovation and creation of modification all fall within the protection domain of the present invention.
Claims (6)
1. the flow pattern of mixing chamber vertical gas more than kind MOCVD nozzle arrangement, comprise: one by top board, sidewall and base plate constitute columniform closure casing, this closure casing and following MOCVD reaction chamber are connected as a single entity, the inside of closure casing is separated into annular seal space and the waterway of two independences and sealing mutually by la m, annular seal space is positioned at the top of la m, be positioned at the la m below, adjacent with the MOCVD reaction chamber is waterway, corresponding side walls is separately installed with cooling water inlet pipe and cooling water outlet pipe at the waterway two ends, feature is: annular seal space is separated into more than two independence and is fan-shaped mixing chamber by vertical isolated body, is separately installed with the mixing chamber intake ducting that one or more is used for transporting reactant gases in each mixing chamber corresponding side walls or top board; Vertical air inlet pore runs through la m from the top down successively, by waterway, run through base plate, be communicated with each mixing chamber and MOCVD reaction chamber.
2. many mixing chambers vertical gas flow pattern MOCVD nozzle arrangement according to claim 1, it is characterized in that: isolated body is solid dividing plate.
3. many mixing chambers vertical gas flow pattern MOCVD nozzle arrangement according to claim 1, it is characterized in that: isolated body is the separate cavities of hollow, sidewall or top board at separate cavities are equipped with one or more intake ducting, are distributed with the air inlet pore at the la m that joins with separate cavities.
4. many mixing chambers vertical gas flow pattern MOCVD nozzle arrangement according to claim 1 is characterized in that: the air inlet pore evenly distributes on la m.
5. a kind of many mixing chambers vertical gas flow pattern MOCVD nozzle arrangement according to claim 1, it is characterized in that: the volume of each mixing chamber is identical, and the number of mixing chamber is even number.
6. a kind of many mixing chambers vertical gas flow pattern MOCVD nozzle arrangement according to claim 1, it is characterized in that: the vertical range of the substrate in the outlet of air inlet pore and the MOCVD reaction chamber is between 5mm-100mm.
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|---|---|---|---|
| CN2013101516662A CN103205733A (en) | 2013-04-27 | 2013-04-27 | Vertical airflow type MOCVD (Metal-organic Chemical Vapor Deposition) spray head device with multiple gas mixing chambers |
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| CN2013101516662A CN103205733A (en) | 2013-04-27 | 2013-04-27 | Vertical airflow type MOCVD (Metal-organic Chemical Vapor Deposition) spray head device with multiple gas mixing chambers |
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Cited By (6)
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| CN103603038A (en) * | 2013-12-10 | 2014-02-26 | 吉林大学 | Photo-assisted MOCVD (metal-organic chemical vapor deposition) reactor with horizontal porous spray device |
| CN103952685A (en) * | 2014-04-14 | 2014-07-30 | 南昌大学 | Metalorganic chemical vapor deposition (MOCVD) growth gas circuit capable of realizing free combination of indium gallium aluminum nitrogen material components and doping, and growth method |
| CN105926035A (en) * | 2016-05-19 | 2016-09-07 | 广东省中科宏微半导体设备有限公司 | Gas inflow device for mixed crystal chemical vapor phase epitaxy |
| CN109706435A (en) * | 2017-10-25 | 2019-05-03 | 北京北方华创微电子装备有限公司 | Chamber cap assemblies, processing chamber and semiconductor processing equipment |
| CN114892270A (en) * | 2022-04-07 | 2022-08-12 | 西安电子科技大学 | Multi-atomization-source Mist-CVD equipment with cold wall time-sharing step-by-step transportation function |
| TWI782762B (en) * | 2021-10-21 | 2022-11-01 | 天虹科技股份有限公司 | Diffusion mechanism and thin-film-deposition equipment using the same |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103603038A (en) * | 2013-12-10 | 2014-02-26 | 吉林大学 | Photo-assisted MOCVD (metal-organic chemical vapor deposition) reactor with horizontal porous spray device |
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| CN109706435B (en) * | 2017-10-25 | 2022-06-17 | 北京北方华创微电子装备有限公司 | Chamber cover assembly, process chamber and semiconductor processing equipment |
| TWI782762B (en) * | 2021-10-21 | 2022-11-01 | 天虹科技股份有限公司 | Diffusion mechanism and thin-film-deposition equipment using the same |
| CN114892270A (en) * | 2022-04-07 | 2022-08-12 | 西安电子科技大学 | Multi-atomization-source Mist-CVD equipment with cold wall time-sharing step-by-step transportation function |
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