CN103103501B - A kind of material vapour phase epitaxy Fan spray head structure - Google Patents
A kind of material vapour phase epitaxy Fan spray head structure Download PDFInfo
- Publication number
- CN103103501B CN103103501B CN201310012409.0A CN201310012409A CN103103501B CN 103103501 B CN103103501 B CN 103103501B CN 201310012409 A CN201310012409 A CN 201310012409A CN 103103501 B CN103103501 B CN 103103501B
- Authority
- CN
- China
- Prior art keywords
- isolation
- area
- gas
- shower nozzle
- admission line
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Chemical Vapour Deposition (AREA)
Abstract
The invention discloses a kind of material vapour phase epitaxy Fan spray head structure, make the first predecessor, the second predecessor, various protective gas in large area conversion zone, fully mix the rear flow field comparatively uniformly that forms. The present invention includes more than one admission line, admission line is provided with the controller that detects and control induction air flow ratio and flow, in shower nozzle cavity, be provided with an above fan-shaped independent isolating region, area of isolation end sealing plate connects an admission line, the baffle plate of giving vent to anger of area of isolation bottom is provided with one and above gas spout, is provided with circular reaction chamber below shower nozzle. The present invention realizes the production in enormous quantities of III family-nitride semi-conductor material, improves the production efficiency of III family-nitride semi-conductor material.
Description
Technical field
The present invention relates to a kind of device for chemical vapour deposition technique on substrate (CVD), relate in particular to a kind of sprinkler design of hydride gas-phase epitaxy (HVPE) use of large area scope uniform deposition.
Background technology
Along with the increase in demand for LED, LD, transistor and integrated circuit, the efficiency of depositing high-quality III family-nitride film presents larger importance. The features such as hydride gas-phase epitaxy (HVPE) technology has fast growth, and production cost is low, are highly suitable for the growth of III family-nitride semi-conductor material, such as the production in enormous quantities of gallium nitride (GaN) wafer. In order to increase output and production capacity, the predecessor being desirably on larger substrate and/or more substrates and larger deposition region evenly mixes. These factors are extremely important, produce the cost of electronic installation and thereby affect the competitiveness of device in market because it directly affects. The nozzle structure great majority that hydride gas-phase epitaxy (HVPE) technology is used are at present circular configuration, in the growth of small size substrate or minority substrate, have some superiority. But increase while being large area scope deposition when substrate dimension becomes large or number, due to the structural limitations of circular shower nozzle, the mixing of predecessor is even not, or area coverage is too small, and when not being suitable for large-sized substrate or multi-disc substrate in growth.
There is obvious limitation but at present the nozzle structure flow field in the time that large scale/large area crystallizing field uses on semiconductor growing equipment is inhomogeneous, the uniformity of predecessor in large-sized substrate/large area crystallizing field is not good and production efficiency is too low, is necessary so the shower nozzle using for hydride gas-phase epitaxy (HVPE) technology improves extremely.
Summary of the invention
Be the deficiency existing for prior art order of the present invention; being to solve is that large area deposition region provides uniform predecessor mixed problem at larger substrate and multiple substrate; a kind of Fan spray head structure is provided, makes the first predecessor, the second predecessor, various protective gas in large area conversion zone, fully mix the rear flow field comparatively uniformly that forms.
For achieving the above object, the invention discloses a kind of material vapour phase epitaxy Fan spray head structure, realized by following technical scheme:
A kind of material vapour phase epitaxy Fan spray head structure, include more than one admission line, admission line is provided with the controller that detects and control induction air flow ratio and flow, in shower nozzle cavity, be provided with an above fan-shaped independent isolating region, area of isolation dual-side is provided with vertical division board, area of isolation is provided with sealing plate between two division board tops, area of isolation is provided with the baffle plate of giving vent to anger between two division board bottoms, between the deep far-end of area of isolation two division board, be provided with arc outside plate, area of isolation two division boards, sealing plate, arc outside plate and give vent to anger and form individual cavity and isolation mutually between baffle plate, area of isolation end sealing plate connects an admission line, the baffle plate of giving vent to anger of area of isolation bottom is provided with one and above gas spout, below shower nozzle, be provided with circular reaction chamber, circular reaction chamber is interior by emanant multiple shower nozzles of arranging.
In some embodiment, in described controller monitoring admission line, the flow velocity of gas, flow adjusting make its uniform flow field, various gas barrier are come and give management and control therein; Admission line passes into different metal source or gas, independent management and control, and the gas barrier in area of isolation comes and gives respectively management and control.
In some embodiment, described area of isolation number arranges on year-on-year basis according to predecessor and protective gas quantity therein.
In some embodiment, the aperture of described gas spout is according to the combined amount adjusting size of predecessor and protective gas therein.
Therein in some embodiment, described shower nozzle outward appearance is fan-shaped, shower nozzle adopts quartzy material, the gas of gas spout ejection from the baffle plate of giving vent to anger of shower nozzle, in circular reaction chamber, mix again, in circular reaction chamber, above substrate, form even hybrid reaction, make the gas of ejection fully after mixing, above substrate, form more uniform flow field in reaction zone.
In some embodiment, the area of isolation in described shower nozzle cavity has three: NH therein3, GaCl and N2Area of isolation, that shower nozzle zone line passes into is N2Area of isolation, both sides are respectively NH3Area of isolation and GaCl area of isolation, three admission lines connect respectively three fan-shaped area of isolation, process shunting or preheating in area of isolation, then get rid of from the gas spout of giving vent to anger baffle plate.
Therein in some embodiment, in described circular reaction cavity, be provided with four ceramic showerhead and be cross and arrange, after gas sprays from shower nozzle, below circular reaction chamber mix, by the spinning of circular reaction chamber liner bottom tray, make mixture cover more equably substrate surface, residual gas is discharged reaction chamber by exhaust admission line.
In some embodiment, the area of isolation in described shower nozzle cavity is five, at NH therein3With a N of the each interpolation in GaCl outside2Area of isolation, each shower nozzle has 3 N2Area of isolation.
In some embodiment, in described circular reaction cavity, be provided with eight shower nozzles therein, be emanant arrangement.
The present invention solves on larger substrate and larger deposition region uniform predecessor mixed problem is provided, thereby realizes the production in enormous quantities of III family-nitride semi-conductor material, improves the production efficiency of III family-nitride semi-conductor material. Fan spray head material of the present invention is used quartz or various high strength, and the lower material of thermal coefficient of expansion, therefore at high temperature uses and is not easy to deform or damages and equipment, substrate growth are exerted an influence; Fan-shaped overall structure is specially adapted to circular reaction chamber, when emanant multiple shower nozzles installation, the growth of large scale or multi-disc substrate (as 20) with large area reaction chamber in, can form on a large scale compared with uniform flow field, result of use is better; Nozzle structure adopts many admission line input gas, and each admission line passes into respectively gas with various, is convenient to various gas to monitor and control, and this has larger help to process debugging; Various gas enters after shower nozzle, and between gas, vertically isolation will be isolated and come, to prevent that them from shifting to an earlier date hybrid reaction in certain area; Various gas, then is mixed and reacts by area of isolation from gas spout ejection.
The present invention has adopted a kind of Fan spray head structure; make the first predecessor, the second predecessor, various protective gas and carrier gas; by inner admission line structure; by fan-shaped nozzle structure, independently area of isolation, and multiple shower nozzle is combined the mode of use; from nozzle ejection; full and uniform mixing in conversion zone, can make predecessor and various gas mix after within the scope of large area uniform deposition at substrate surface, form flow field comparatively uniformly.
Brief description of the drawings
Fig. 1 is the schematic diagram of the present invention's three plot structures.
Fig. 2 is the schematic diagram of the present invention's five plot structures.
Fig. 3 is the schematic diagram of the embodiment of the present invention one.
Fig. 4 is the schematic diagram of the embodiment of the present invention two.
Fig. 5 is the schematic diagram of the embodiment of the present invention three.
Detailed description of the invention
For further understanding feature of the present invention, technological means and the specific purposes that reach, function, resolve the advantages and spirit of the present invention, by below in conjunction with accompanying drawing and detailed description of the invention, detailed description of the present invention being further understood.
The invention provides a kind of material vapour phase epitaxy Fan spray head structure, include more than one admission line 1, admission line 1 is provided with the controller that detects and control induction air flow ratio and flow, in controller monitoring admission line, the flow velocity of gas, flow adjusting make its uniform flow field, various gas barrier come and give management and control, are provided with an above fan-shaped independent isolating region 2 in shower nozzle 4 cavitys. fan-shaped independent isolating region 2 dual-sides are provided with vertical division board, 2 liang, fan-shaped independent isolating region is provided with sealing plate between division board top, 2 liang, fan-shaped independent isolating region is provided with the baffle plate 3 of giving vent to anger between division board bottom, between the deep spoke side of division board of 2 liang, fan-shaped independent isolating region, be provided with arc outside plate, 2 liang of division boards of each fan-shaped area of isolation, sealing plate, arc outside plate and give vent to anger and form individual cavity and isolation mutually between baffle plate 3, every kind of gas is from admission line enters separately, in this region, keep apart, in case too early hybrid reaction and its product are attached to shower nozzle inwall.
Fan-shaped area of isolation 2 numbers arrange on year-on-year basis according to predecessor and protective gas quantity; the quantity of admission line 1 is decided by size or the quantity of substrate slice; each fan-shaped area of isolation 2 end sealing plates connect an admission line 1; multiple gas with various enters respectively from different admission lines 1; the baffle plate 3 of giving vent to anger of each fan-shaped area of isolation 2 bottoms is provided with one and above gas spout, and the aperture of gas spout is according to the combined amount adjusting size of predecessor and protective gas. Shower nozzle 4 outward appearances are fan-shaped, and shower nozzle 4 adopts quartzy material, and shower nozzle 4 is provided with circular reaction chamber below, and shower nozzle 4 is arranged by emanant in circular reaction chamber, is provided with multiple shower nozzles 4 in circular reaction chamber. The gas of gas spout ejection from the baffle plate 3 of giving vent to anger of shower nozzle 4, gas spout Exhaust Gas mixes in circular reaction chamber again, in circular reaction chamber, above substrate, form even hybrid reaction, can make the gas of ejection fully after mixing, above substrate, form more uniform flow field in reaction zone. Each admission line 1 passes into different metal source or gas, the gas with various independence management and control that admission line 1 passes into, do not produce to each other interference, the gas of each fan-shaped area of isolation 2 is uniformly distributed in baffle plate 3 giving vent to anger, gas barrier in fan-shaped area of isolation 2 comes and gives respectively management and control, provide uniform predecessor to mix at the conversion zone of circular reaction chamber, form uniform flow field.
Fan-shaped area of isolation 2 in ceramic showerhead 4 cavitys has three: NH3, GaCl and N2Area of isolation, N2As protective gas, three admission lines 1 connect respectively three fan-shaped area of isolation 2, and three admission lines 1 are independent mutually, and charge flow rate is controlled. Gas enters into area of isolation 2 and separates from admission line 1, interior through shunting or preheating at area of isolation 2, then gets rid of from the gas spout of giving vent to anger baffle plate 3.
Three is respectively NH3, GaCl and N2Area of isolation 2, that shower nozzle 4 zone lines pass into is N2Area of isolation 2, both sides are respectively NH3Area of isolation and GaCl area of isolation, so NH3Do not have hybrid reaction at once with GaCl at shower nozzle 4, but mix below shower nozzle 4. That pass into due to shower nozzle zone line is N2，So NH3With the rear not horse back of GaCl ejection hybrid reaction, but mix below shower nozzle. This design can effectively prevent that 2 kinds of too early hybrid reactions of gas and its generation accessory substance are attached on shower nozzle. This design can effectively prevent that 2 kinds of too early hybrid reactions of gas and its generation accessory substance are attached on shower nozzle.
In whole cavity, be provided with four ceramic showerhead 4 and be cross and arrange, after gas spray from shower nozzle 4, below the mixing of circular reaction chamber, by the spinning of circular reaction chamber liner bottom tray, make mixture cover more equably substrate surface. Residual gas is discharged reaction chamber by exhaust admission line.
Area of isolation 2 in shower nozzle 4 cavitys is five, at NH3With a N of the each interpolation in GaCl outside2Area of isolation 2(be that each shower nozzle has 3 N2Area of isolation 2) time, the interior NH through shunting, preheating of area of isolation 23After spraying from spout with GaCl gas, in a bit of distance range of circular reaction chamber, lean on air-flow inertia, more effectively by NH3Toward extension, make hybrid reaction region outwards pass (farther from spout) with the area of isolation of GaCl, thereby (both each shower nozzle only had 1 N with only having 3 isolated areas2Area of isolation) shower nozzle 4 compare, reduce significantly the cohesion of byproduct of reaction in ceramic showerhead, increase the service life of ceramic showerhead.
Ceramic showerhead 4 changes eight in whole cavity, and is emanant arrangement, after gas spray from shower nozzle, below mixing, by the spinning of substrate pallet, make mixture cover more equably substrate surface. In contrast to the arrangement mode of four shower nozzles, eight shower nozzles can increase the area coverage of gas, and what make mixture covers substrate surface more uniformly. Byproduct of reaction and residual gas are discharged reaction chamber by exhaust admission line.
Referring to accompanying drawing 1, NH3, GaCl and N2Gas enters respectively from different admission lines, and this design makes the flow of various gases detect respectively and to control; Various gas, from admission line enters separately, is kept apart in this area of isolation, in case too early hybrid reaction and its product are attached to shower nozzle inwall; Discharge from gas spout separately through the gas of area of isolation, just mix and react; Shower nozzle outward appearance is sector structure, in circular reaction chamber, by emanant multiple shower nozzles of arranging, can make the gas of ejection fully after mixing, form more uniform flow field above substrate in reaction zone.
Referring to accompanying drawing 2, NH3, GaCl and 3 N2Gas enters respectively from different admission line admission lines, and this design can be controlled respectively the flow of various gases; Every kind of gas, from admission line enters separately, is kept apart in this area of isolation, in case too early hybrid reaction and its product are attached to shower nozzle inwall; Gas in area of isolation is discharged from gas spout, then mixes; Shower nozzle outward appearance is sector structure, in circular reaction chamber, arranges by emanant, can make the gas of ejection after reaction zone fully mixes, and forms more uniform flow field above substrate.
Embodiment mono-:
The reaction that relates to chemical vapour deposition technique (CVD) or hydride gas-phase epitaxy (HVPE) all need to be carried out under hot conditions. So shower nozzle material need to be selected high strength, do not produce chemical reaction with reacting gas, and the lower material of thermal coefficient of expansion, as quartz is made shower nozzle, referring to accompanying drawing 3.
The admission line of ceramic showerhead determines by the quantity of the area of isolation of below, and three of the minimum needs of area of isolation, at NH3And between GaCl, add N2As separation gas. So admission line minimum number is three, and three admission lines are independent mutually, and charge flow rate is controlled.
In the time that area of isolation quantity is three, gas enters into area of isolation and separates from admission line, then through shunting or preheating, then sprays from spout.
That pass into due to shower nozzle zone line is N2So, NH3With not horse back hybrid reaction of GaCl ejection, but mix below shower nozzle. This design can effectively prevent that 2 kinds of too early hybrid reactions of gas and its generation accessory substance are attached on shower nozzle.
Arrange and use four ceramic showerhead to be cross in whole cavity, after gas spray from shower nozzle, below mixing, by the spinning of substrate pallet, make mixture cover more equably substrate surface. Residual gas is discharged reaction chamber by exhaust admission line.
Embodiment bis-:
The reaction that relates to chemical vapour deposition technique (CVD) or hydride gas-phase epitaxy (HVPE) all need to be carried out under hot conditions. So shower nozzle material need to be selected high strength, do not produce chemical reaction with reacting gas, and the lower material of thermal coefficient of expansion, as quartz is made shower nozzle, referring to accompanying drawing 4.
The admission line of ceramic showerhead determines by the area of isolation quantity of below, and three of the minimum needs of area of isolation, at NH3And between GaCl, add N2As protective gas. So admission line minimum number is three, and three admission lines are independent mutually, and charge flow rate is controlled.
If area of isolation quantity increases to five, at NH3With a N of the each interpolation in GaCl outside2Isolated area (be that each shower nozzle has 3 N2Isolated area) time, through the NH of shunting, preheating3In a bit of distance range after spraying from spout with GaCl gas, by air-flow inertia, more effectively by NH3Toward extension, make hybrid reaction region outwards pass (farther from spout) with the area of isolation of GaCl, thereby (both each shower nozzle only had 1 N with only having 3 isolated areas2Isolated area) shower nozzle in territory compares, and reduces significantly the byproduct of reaction cohesion in ceramic showerhead, increases the service life of ceramic showerhead.
As in whole cavity, use four ceramic showerhead be cross arrange, after gas spray from shower nozzle, below mixing, can pass through the spinning of substrate pallet, make mixture cover more equably substrate surface. Byproduct of reaction residual gas is discharged outside reaction chamber by exhaust admission line.
Embodiment tri-:
The reaction that relates to chemical vapour deposition technique (CVD) or hydride gas-phase epitaxy (HVPE) all need to be carried out under hot conditions. So shower nozzle material need to be selected high strength, do not produce chemical reaction with reacting gas, and the lower material of thermal coefficient of expansion, as quartz is made shower nozzle, referring to accompanying drawing 5.
The admission line of ceramic showerhead determines by the area of isolation quantity of below, and three of the minimum needs of area of isolation, at NH3And between GaCl, add N2As protective gas. So admission line minimum number is three, and three admission lines are independent mutually, and charge flow rate is controlled.
In the time that area of isolation quantity is three, gas enters into area of isolation and separates from admission line, then through shunting or preheating, then sprays from spout.
That pass into due to shower nozzle zone line is N2So, after NH3 and GaCl ejection, do not have hybrid reaction at once, but mix below shower nozzle. This design can effectively prevent that 2 kinds of too early hybrid reactions of gas and its generation accessory substance are attached on shower nozzle.
Ceramic showerhead changes six in whole cavity, and is emanant arrangement, after gas spray from shower nozzle, below mixing, by the spinning of substrate pallet, make mixture cover more equably substrate surface. In contrast to the arrangement mode of four shower nozzles, eight shower nozzles can increase the area coverage of gas, and what make mixture covers substrate surface more uniformly. Byproduct of reaction and residual gas are discharged reaction chamber by exhaust admission line.
Shower nozzle of the present invention adopts overall fan-shaped mechanism, controls multiple independent isolating region and regulates, and shower nozzle circumferential arrangement is used in combination.
The above embodiment has only expressed the specific embodiment of the present invention, and it describes comparatively concrete and detailed, but can not therefore be interpreted as the restriction to the scope of the claims of the present invention. It should be pointed out that the technology for this area, without departing from the inventive concept of the premise, can also make some distortion and improvement, these all belong to protection scope of the present invention. Therefore, the protection domain of patent of the present invention should be as the criterion with claims.
Claims (8)
1. a material vapour phase epitaxy Fan spray head structure, includes more than one admission line, its featureBe, described admission line is provided with the controller that detects and control induction air flow ratio and flow, described shower nozzle chamberIn body, be provided with an above fan-shaped independent isolating region, described area of isolation dual-side is provided with vertical isolationPlate, described area of isolation is provided with sealing plate between two division board tops, described area of isolation two division board bottomsBetween be provided with the baffle plate of giving vent to anger, between the deep far-end of described area of isolation two division board, be provided with arc outside plate,Described area of isolation two division boards, sealing plate, arc outside plate and giving vent to anger between baffle plate, form individual cavity andIsolation mutually, described area of isolation end sealing plate connects an admission line, described area of isolation bottomThe baffle plate of giving vent to anger is provided with one and above gas spout, is provided with circular reaction chamber below described shower nozzle, described inCircular reaction chamber is interior by emanant multiple shower nozzles of arranging;
In described controller monitoring admission line, the flow velocity of gas, flow adjusting make its uniform flow field, make eachKind gas barrier comes and gives management and control; Described admission line passes into different metal source or gas, independent management and control,Gas barrier in area of isolation comes and gives respectively management and control.
2. a kind of material vapour phase epitaxy Fan spray head structure according to claim 1, is characterized in that,Described area of isolation number arranges on year-on-year basis according to predecessor and protective gas quantity.
3. a kind of material vapour phase epitaxy Fan spray head structure according to claim 1, is characterized in that,The aperture of described gas spout is according to the combined amount adjusting size of predecessor and protective gas.
4. a kind of material vapour phase epitaxy Fan spray head structure according to claim 1, is characterized in that,Described shower nozzle outward appearance is fan-shaped, and described shower nozzle adopts quartzy material, gas spout from the baffle plate of giving vent to anger of shower nozzleThe gas of ejection mixes in circular reaction chamber again, in circular reaction chamber, above substrate, forms evenlyHybrid reaction, makes the gas of ejection fully after mixing, form more uniform flow field above substrate in reaction zone.
5. a kind of material vapour phase epitaxy Fan spray head structure according to claim 1, is characterized in that,Area of isolation in described shower nozzle cavity has three: NH3, GaCl and N2 area of isolation, and in described shower nozzleBetween region passes into is N2 area of isolation, both sides are respectively NH3 area of isolation and GaCl area of isolation, threeBar admission line connects respectively three fan-shaped area of isolation, process shunting or preheating in area of isolation, thenGet rid of from the gas spout of giving vent to anger baffle plate.
6. a kind of material vapour phase epitaxy Fan spray head structure according to claim 1, is characterized in that,In described circular reaction cavity, be provided with four ceramic showerhead and be cross and arrange, after gas sprays from shower nozzle,Below circular reaction chamber mix, by the spinning of circular reaction chamber liner bottom tray, make mixtureCover equably substrate surface, residual gas is discharged reaction chamber by exhaust admission line.
7. a kind of material vapour phase epitaxy Fan spray head structure according to claim 1, is characterized in that,Area of isolation in described shower nozzle cavity is five, in the each isolation of adding a N2 of NH3 and GaCl outsideRegion, each shower nozzle has 3 N2 area of isolation.
8. a kind of material vapour phase epitaxy Fan spray head structure according to claim 1, is characterized in that,In described circular reaction cavity, be provided with eight shower nozzles, be emanant arrangement.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310012409.0A CN103103501B (en) | 2013-01-14 | 2013-01-14 | A kind of material vapour phase epitaxy Fan spray head structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310012409.0A CN103103501B (en) | 2013-01-14 | 2013-01-14 | A kind of material vapour phase epitaxy Fan spray head structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103103501A CN103103501A (en) | 2013-05-15 |
| CN103103501B true CN103103501B (en) | 2016-05-11 |
Family
ID=48311687
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310012409.0A Active CN103103501B (en) | 2013-01-14 | 2013-01-14 | A kind of material vapour phase epitaxy Fan spray head structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103103501B (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103911657A (en) * | 2013-11-25 | 2014-07-09 | 东莞市中镓半导体科技有限公司 | Nozzle distribution mode for compound semiconductor large-area vapor phase epitaxy |
| DE102015118765A1 (en) | 2014-11-20 | 2016-06-09 | Aixtron Se | Device for coating a large-area substrate |
| DE102015101461A1 (en) | 2015-02-02 | 2016-08-04 | Aixtron Se | Device for coating a large-area substrate |
| CN105926035A (en) * | 2016-05-19 | 2016-09-07 | 广东省中科宏微半导体设备有限公司 | Gas inflow device for mixed crystal chemical vapor phase epitaxy |
| CN109839426A (en) * | 2017-11-28 | 2019-06-04 | 中国科学院大连化学物理研究所 | Method that is a kind of while improving transference tube interior air-flow and temperature uniformity |
| CN108048901A (en) * | 2017-12-19 | 2018-05-18 | 东莞市中镓半导体科技有限公司 | A kind of nozzle structure of hydride gas-phase epitaxy |
| CN108231632A (en) * | 2018-01-08 | 2018-06-29 | 德淮半导体有限公司 | nozzle and gas supply system |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4487338B2 (en) * | 1999-08-31 | 2010-06-23 | 東京エレクトロン株式会社 | Film forming apparatus and film forming method |
| JP3869778B2 (en) * | 2002-09-11 | 2007-01-17 | エア・ウォーター株式会社 | Deposition equipment |
| CN101812673A (en) * | 2010-01-07 | 2010-08-25 | 中国科学院半导体研究所 | Fan-shaped gas inlet spray head for metal organic chemical vapor deposition equipment |
-
2013
- 2013-01-14 CN CN201310012409.0A patent/CN103103501B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN103103501A (en) | 2013-05-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103103501B (en) | A kind of material vapour phase epitaxy Fan spray head structure | |
| CN103014846A (en) | Concentric-ring sprayer structure for material vapor phase epitaxy | |
| JP4958798B2 (en) | Chemical vapor deposition reactor and chemical vapor deposition method | |
| TWI589359B (en) | Gas shower, chemical vapor deposition apparatus and method | |
| CN103060906B (en) | A kind of Square spray nozzle structure for vapor phase epitaxy of material | |
| US20100263588A1 (en) | Methods and apparatus for epitaxial growth of semiconductor materials | |
| US8840726B2 (en) | Apparatus for thin-film deposition | |
| CN103098175A (en) | Showerhead assembly with gas injection distribution devices | |
| TW201213570A (en) | Thin film deposition apparatus | |
| CN106498368B (en) | A kind of spray head for MOCVD device | |
| CN102656665A (en) | Vapor deposition device, vapor deposition method, and semiconductor element manufacturing method | |
| CN104264128B (en) | A kind of grating type distribution device in gas-fluid for MOCVD reactors | |
| TWI472645B (en) | Mocvd gas diffusion system with air inlet baffles | |
| TW201600634A (en) | Intake and cooling device for MOCVD equipment | |
| CN202090055U (en) | Gas delivery device and reactor employing same | |
| CN104141116A (en) | Metal organic chemical vapor deposition device, gas spray component and gas distribution control method | |
| CN106011792B (en) | The even pneumatic module of MOCVD upper lower burrs of rotary premixed gas | |
| CN206418196U (en) | A kind of even gas upper lower burrs components of the MOCVD of H types shower nozzle | |
| CN106011793B (en) | Gas disk and gas reaction equipment | |
| CN113508189B (en) | Linear spray head for GaN material growth | |
| CN103060775B (en) | Polyhedron funnel type air inlet unit for CVD (chemical vapor deposition) equipment and CVD equipment | |
| CN112210826B (en) | Vapor phase epitaxy chamber | |
| CN209428598U (en) | Improve the depositing system of nozzle head | |
| CN103215562A (en) | Reaction cavity | |
| CN103074602A (en) | Reaction chamber of chemical vapor deposition apparatus |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |