CN103103501A - Fan-shaped spray head structure for vapor phase epitaxy of material - Google Patents
Fan-shaped spray head structure for vapor phase epitaxy of material Download PDFInfo
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- CN103103501A CN103103501A CN2013100124090A CN201310012409A CN103103501A CN 103103501 A CN103103501 A CN 103103501A CN 2013100124090 A CN2013100124090 A CN 2013100124090A CN 201310012409 A CN201310012409 A CN 201310012409A CN 103103501 A CN103103501 A CN 103103501A
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Abstract
The invention discloses a fan-shaped spray head structure for vapor phase epitaxy of a material. A first precursor, a second precursor and various protective gases are sufficiently mixed in a large-area reaction region to form a relatively uniform flow field. The structure disclosed by the invention comprises more than one gas inlet pipeline; a controller for detecting and controlling the gas inlet flow rate and flow is arranged on the gas inlet pipeline; more than one fan-shaped independent isolation region is arranged in a cavity of the spray head; a sealing plate at the top end of the isolation region is connected with the gas inlet pipeline; one and more gas nozzles are formed on a gas outlet baffle at the bottom end of the isolation region; and a round reaction cavity is arranged below the spray head. According to the invention, large-scale production of III group-nitride semiconductor material is realized, and the production efficiency of the III group-nitride semiconductor material is improved.
Description
Technical field
The present invention relates to a kind of device for chemical Vapor deposition process on substrate (CVD), relate in particular to a kind of sprinkler design of hydride gas-phase epitaxy (HVPE) use of big area scope uniform deposition.
Background technology
Along with the increase in demand for LED, LD, transistor and unicircuit, the efficient of depositing high-quality III family-nitride film presents larger importance.The characteristics such as hydride gas-phase epitaxy (HVPE) technology has fast growth, and production cost is low are highly suitable for III family-nitride semi-conductor material growth, such as the production in enormous quantities of gan (GaN) wafer.In order to increase output and throughput, the precursor that is desirably on larger substrate and/or more substrates and larger deposition region evenly mixes.These factors are extremely important, because it directly affects the cost of producing electronic installation and thereby affects the competitive power of device in market.The nozzle structure great majority that present hydride gas-phase epitaxy (HVPE) technology is used are circular configuration, have some superiority in the growth of small size substrate or minority substrate.But when substrate dimension becomes large or number increases when being big area scope deposition, due to the structural limitations of circular shower nozzle, the mixing of precursor is even not, and perhaps area coverage is too small, and when not being suitable for large-sized substrate or multi-disc substrate in growth.
Has an obvious limitation but at present the flow field when large size/big area sedimentary province uses of the nozzle structure on semiconductor growing equipment is inhomogeneous, the homogeneity of precursor in large-sized substrate/big area sedimentary province is not good and production efficiency is too low, is necessary so the shower nozzle that uses for hydride gas-phase epitaxy (HVPE) technology improves extremely.
Summary of the invention
Be the deficiency for the prior art existence order of the present invention; being to solve at larger substrate and a plurality of substrate is that the big area deposition region provides uniform precursor mixed problem; a kind of Fan spray head structure is provided, makes the first precursor, the second precursor, various protective gas fully mix the rear flow field comparatively uniformly that forms in the big area conversion zone.
For achieving the above object, the invention discloses a kind of material vapour phase epitaxy Fan spray head structure, realized by following technical scheme:
a kind of material vapour phase epitaxy Fan spray head structure, include an above intake ducting, intake ducting is provided with the controller that detects and control induction air flow ratio and flow, be provided with independent isolating zone fan-shaped more than in the shower nozzle cavity, the area of isolation dual-side is provided with vertical division board, area of isolation is provided with sealing plate between two division board tops, be provided with the baffle plate of giving vent to anger between bottom area of isolation two division boards, be provided with the arc outside plate between the area of isolation two deep far-ends of division board, area of isolation two division boards, sealing plate, arc outside plate and give vent to anger formation individual cavity and isolation mutually between baffle plate, area of isolation end sealing plate connects an intake ducting, the baffle plate of giving vent to anger of area of isolation bottom is provided with one and above gas spout, be provided with circular reaction chamber below shower nozzle, circular reaction chamber is interior by emanant a plurality of shower nozzles of arranging.
In some embodiment, in described controller monitoring intake ducting, the flow velocity of gas, flow and adjusting make its uniform flow field, various gas barrier are come give management and control therein; Intake ducting passes into different metal source or gas, independent management and control, and the gas barrier in area of isolation comes and gives respectively management and control.
In some embodiment, described area of isolation number arranges on year-on-year basis according to precursor and protective gas quantity therein.
In some embodiment, the aperture of described gas spout is according to the combined amount adjusting size of precursor and protective gas therein.
Therein in some embodiment, described shower nozzle outward appearance is fan-shaped, shower nozzle adopts quartzy material, the gas of gas spout ejection from the baffle plate of giving vent to anger of shower nozzle, mix again in circular reaction chamber, form even hybrid reaction above substrate in circular reaction chamber, make the gas of ejection fully mix the rear more uniform flow field that forms in reaction zone above substrate.
In some embodiment, the area of isolation in described shower nozzle cavity has three: NH therein
3, GaCl and N
2Area of isolation, that the shower nozzle region intermediate passes into is N
2Area of isolation, both sides are respectively NH
3Area of isolation and GaCl area of isolation, three intake ductings connect respectively three fan-shaped area of isolation, process shunting or preheating in area of isolation, then the gas spout from the baffle plate of giving vent to anger is got rid of.
Therein in some embodiment, be provided with four ceramic showerhead in described circular reaction cavity and be cruciform and arrange, after gas sprays from shower nozzle, below circular reaction chamber mix, spinning by circular reaction chamber liner bottom tray, make mixture cover more equably substrate surface, residual gas is discharged reaction chamber by the exhaust intake ducting.
In some embodiment, the area of isolation in described shower nozzle cavity is five, at NH therein
3Respectively add a N with the GaCl outside
2Area of isolation, each shower nozzle has 3 N
2Area of isolation.
In some embodiment, be provided with eight shower nozzles in described circular reaction cavity therein, be emanant arrangement.
The present invention solves on larger substrate and larger deposition region uniform precursor mixed problem is provided, thereby realizes the production in enormous quantities of III family-nitride semi-conductor material, improves the production efficiency of III family-nitride semi-conductor material.Fan spray head material of the present invention is used quartzy or various high strength, and the lower material of thermal expansivity, therefore at high temperature uses be not easy to deform or damage and equipment, substrate growth are exerted an influence; Fan-shaped one-piece construction is specially adapted to circular reaction chamber, when the emanant installation of a plurality of shower nozzles, the growth of large size or multi-disc substrate (as 20) with the big area reaction chamber in, can form on a large scale than uniform flow field, result of use is better; Nozzle structure adopts many intake ducting input gases, and each intake ducting passes into respectively gas with various, is convenient to various gases are monitored and controlled, and this has larger help to process debugging; After various gases enter shower nozzle, between gas, vertically isolation, will be isolated in certain area and come, and shift to an earlier date hybrid reaction to prevent them; Various gases, then mix and react after gas spout ejection by area of isolation.
The present invention has adopted a kind of Fan spray head structure; make the first precursor, the second precursor, various protective gas and carrier gas; intake ducting structure by inside; by fan-shaped nozzle structure, area of isolation independently, and a plurality of shower nozzle is united the mode of use; after the nozzle ejection; full and uniform mixing in conversion zone, uniform deposition is at substrate surface in the big area scope afterwards can to make the mixing of precursor and various gas, and formation is the flow field comparatively uniformly.
Description of drawings
Fig. 1 is the schematic diagram of the present invention's three plot structures.
Fig. 2 is the schematic diagram of the present invention's five plot structures.
Fig. 3 is the schematic diagram of the embodiment of the present invention one.
Fig. 4 is the schematic diagram of the embodiment of the present invention two.
Fig. 5 is the schematic diagram of the embodiment of the present invention three.
Embodiment
For further understanding feature of the present invention, technique means and the specific purposes that reach, function, resolve the advantages and spirit of the present invention, by below in conjunction with accompanying drawing and embodiment, detailed description of the present invention being further understood.
The invention provides a kind of material vapour phase epitaxy Fan spray head structure, include an above intake ducting 1, intake ducting 1 is provided with the controller that detects and control induction air flow ratio and flow, in the controller monitoring intake ducting, the flow velocity of gas, flow and adjusting make its uniform flow field, various gas barrier come and give management and control, are provided with fan-shaped more than one independent isolating zone 2 in shower nozzle 4 cavitys.fan-shaped independent isolating zone 2 dual-sides are provided with vertical division board, 2 liang, fan-shaped independent isolating zone is provided with sealing plate between the division board top, be provided with the baffle plate 3 of giving vent to anger between bottom the division board of 2 liang, zone of fan-shaped independent isolating, be provided with the arc outside plate between the 2 liang of deep spoke sides of division board in fan-shaped independent isolating zone, 2 liang of division boards of each fan-shaped area of isolation, sealing plate, arc outside plate and give vent to anger formation individual cavity and isolation mutually between baffle plate 3, every kind of gas is from after intake ducting enters separately, keep apart in this zone, in case too early hybrid reaction and its product are attached to the shower nozzle inwall.
Fan-shaped area of isolation 2 numbers arrange on year-on-year basis according to precursor and protective gas quantity; the quantity of intake ducting 1 is decided by size or the quantity of substrate slice; each fan-shaped area of isolation 2 end sealing plates connect an intake ducting 1; multiple gas with various enters from different intake ductings 1 respectively; the baffle plate 3 of giving vent to anger of each fan-shaped area of isolation 2 bottoms is provided with one and above gas spout, and the aperture of gas spout is according to the combined amount adjusting size of precursor and protective gas.Shower nozzle 4 outward appearances are fan-shaped, and shower nozzle 4 adopts quartzy materials, are provided with circular reaction chamber below shower nozzle 4, and shower nozzle 4 is arranged by emanant in circular reaction chamber, is provided with a plurality of shower nozzles 4 in circular reaction chamber.The gas of gas spout ejection from the baffle plate 3 of giving vent to anger of shower nozzle 4, the gas spout Exhaust Gas mixes in circular reaction chamber again, form even hybrid reaction above substrate in circular reaction chamber, can make the gas of ejection fully mix the rear more uniform flow field that forms in reaction zone above substrate.Each intake ducting 1 passes into different metal source or gas, the gas with various independence management and control that intake ducting 1 passes into, do not produce to each other interference, the gas of each fan-shaped area of isolation 2 is in the interior even distribution of the baffle plate 3 of giving vent to anger, gas barrier in fan-shaped area of isolation 2 comes and gives respectively management and control, conversion zone at circular reaction chamber provides uniform precursor to mix, and forms uniform flow field.
Fan-shaped area of isolation 2 in ceramic showerhead 4 cavitys has three: NH
3, GaCl and N
2Area of isolation, N
2As shielding gas, three intake ductings 1 connect respectively three fan-shaped area of isolation 2, and three intake ductings 1 are independent mutually, and charge flow rate is controlled.Gas enters into area of isolation 2 and separates from intake ducting 1, and is interior through shunting or preheating at area of isolation 2, then the gas spout from the baffle plate 3 of giving vent to anger is got rid of.
Three is respectively NH
3, GaCl and N
2Area of isolation 2, that shower nozzle 4 region intermediates pass into is N
2Area of isolation 2, both sides are respectively NH
3So area of isolation and GaCl area of isolation are NH
3Do not have hybrid reaction at once with GaCl at shower nozzle 4, but mix below shower nozzle 4.That pass into due to the shower nozzle region intermediate is N
2,So NH
3With the rear not horse back of GaCl ejection hybrid reaction, but mix below shower nozzle.This design can prevent effectively that 2 kinds of too early hybrid reactions of gas and its generation by product are attached on shower nozzle.This design can prevent effectively that 2 kinds of too early hybrid reactions of gas and its generation by product are attached on shower nozzle.
Be provided with four ceramic showerhead 4 in whole cavity and be cruciform and arrange, after gas spray from shower nozzle 4, below circular reaction chamber mixing, by the spinning of circular reaction chamber liner bottom tray, make mixture cover more equably substrate surface.Residual gas is discharged reaction chamber by the exhaust intake ducting.
Area of isolation 2 in shower nozzle 4 cavitys is five, at NH
3Respectively add a N with the GaCl outside
2Area of isolation 2(be that each shower nozzle has 3 N
2Area of isolation 2) time, the interior NH through shunting, preheating of area of isolation 2
3In a bit of distance range of circular reaction chamber, lean on air-flow inertia, more effectively with NH after spraying from spout with GaCl gas
3With the past extension of the area of isolation of GaCl, make the outwards passing (farther from spout) of hybrid reaction zone, thereby (both each shower nozzle only had 1 N with only having 3 isolated areas
2Area of isolation) shower nozzle 4 is compared, and reduces significantly the byproduct of reaction cohesion on ceramic showerhead, increases the work-ing life of ceramic showerhead.
Referring to accompanying drawing 1, NH
3, GaCl and N
2Gas enters from different intake ductings respectively, and this design makes the flow of various gases detect respectively and to control; Various gases are kept apart in this area of isolation from after intake ducting enters separately, in case hybrid reaction and its product are attached to the shower nozzle inwall too early; Discharge from gas spout separately through the gas of area of isolation, just mix reacting; The shower nozzle outward appearance is sector structure, by emanant a plurality of shower nozzles of arranging, can make the gas of ejection fully mix the rear more uniform flow field that forms in reaction zone above substrate in circular reaction chamber.
Referring to accompanying drawing 2, NH
3, GaCl and 3 N
2Gas enters from different intake ducting intake ductings respectively, and this design can be controlled respectively the flow of various gases; Every kind of gas is kept apart in this area of isolation from after intake ducting enters separately, in case hybrid reaction and its product are attached to the shower nozzle inwall too early; Gas in area of isolation is discharged from gas spout, then mixes; The shower nozzle outward appearance is sector structure, arranges by emanant in circular reaction chamber, can make the gas of ejection after reaction zone fully mixes, and forms more uniform flow field above substrate.
Embodiment one:
The reaction that relates to chemical Vapor deposition process (CVD) or hydride gas-phase epitaxy (HVPE) all need to be carried out under hot conditions.So the shower nozzle material need to be selected high strength, do not produce chemical reaction with reactant gases, and the lower material of thermal expansivity, make shower nozzle as quartz, referring to accompanying drawing 3.
The intake ducting of ceramic showerhead is by the quantity decision of the area of isolation of below, and three of the minimum needs of area of isolation are namely at NH
3And add N between GaCl
2As separation gas.So the intake ducting minimum number is three, and three intake ductings are independent mutually, and charge flow rate is controlled.
When area of isolation quantity was three, gas entered into area of isolation and separates from intake ducting, then through shunting or preheating, then sprayed from spout.
That pass into due to the shower nozzle region intermediate is N
2So, NH
3Do not have hybrid reaction at once with the GaCl ejection, but mix below shower nozzle.This design can prevent effectively that 2 kinds of too early hybrid reactions of gas and its generation by product are attached on shower nozzle.
Arrange and use four ceramic showerhead to be cruciform in whole cavity, after gas spray from shower nozzle, below mixing, by the spinning of substrate pallet, make mixture cover more equably substrate surface.Residual gas is discharged reaction chamber by the exhaust intake ducting.
Embodiment two:
The reaction that relates to chemical Vapor deposition process (CVD) or hydride gas-phase epitaxy (HVPE) all need to be carried out under hot conditions.So the shower nozzle material need to be selected high strength, do not produce chemical reaction with reactant gases, and the lower material of thermal expansivity, make shower nozzle as quartz, referring to accompanying drawing 4.
The intake ducting of ceramic showerhead is by the area of isolation quantity decision of below, and three of the minimum needs of area of isolation are namely at NH
3And add N between GaCl
2As shielding gas.So the intake ducting minimum number is three, and three intake ductings are independent mutually, and charge flow rate is controlled.
If area of isolation quantity increases to five, namely at NH
3Respectively add a N with the GaCl outside
2Isolated area (be that each shower nozzle has 3 N
2Isolated area) time, through the NH of shunting, preheating
3In a bit of distance range after spraying from spout with GaCl gas, by air-flow inertia, more effectively with NH
3With the past extension of the area of isolation of GaCl, make the outwards passing (farther from spout) of hybrid reaction zone, thereby (both each shower nozzle only had 1 N with only having 3 isolated areas
2Isolated area) shower nozzle in territory is compared, and reduces significantly the byproduct of reaction cohesion on ceramic showerhead, increases the work-ing life of ceramic showerhead.
Arrange as using four ceramic showerhead to be cruciform in whole cavity, after gas spray from shower nozzle, below mix, can pass through the spinning of substrate pallet, make mixture cover more equably substrate surface.The byproduct of reaction residual gas is discharged outside reaction chamber by the exhaust intake ducting.
Embodiment three:
The reaction that relates to chemical Vapor deposition process (CVD) or hydride gas-phase epitaxy (HVPE) all need to be carried out under hot conditions.So the shower nozzle material need to be selected high strength, do not produce chemical reaction with reactant gases, and the lower material of thermal expansivity, make shower nozzle as quartz, referring to accompanying drawing 5.
The intake ducting of ceramic showerhead is by the area of isolation quantity decision of below, and three of the minimum needs of area of isolation are namely at NH
3And add N between GaCl
2As shielding gas.So the intake ducting minimum number is three, and three intake ductings are independent mutually, and charge flow rate is controlled.
When area of isolation quantity was three, gas entered into area of isolation and separates from intake ducting, then through shunting or preheating, then sprayed from spout.
That pass into due to the shower nozzle region intermediate is N
2So, do not have hybrid reaction at once after NH3 and GaCl ejection, but mix below shower nozzle.This design can prevent effectively that 2 kinds of too early hybrid reactions of gas and its generation by product are attached on shower nozzle.
Ceramic showerhead changes six in whole cavity, and is emanant arrangement, after gas spray from shower nozzle, below mixing, by the spinning of substrate pallet, make mixture cover more equably substrate surface.In contrast to the arrangement mode of four shower nozzles, eight shower nozzles can increase the area coverage of gas, and what make mixture covers substrate surface more uniformly.Byproduct of reaction and residual gas are discharged reaction chamber by the exhaust intake ducting.
Shower nozzle of the present invention adopts whole fan-shaped mechanism, controls a plurality of independent isolating zones and regulates, and the shower nozzle circumferential arrangement is used in combination.
The above embodiment has only expressed the specific embodiment of the present invention, and it describes comparatively concrete and detailed, but can not therefore be interpreted as the restriction to the scope of the claims of the present invention.Should be pointed out that the technology for this area, without departing from the inventive concept of the premise, can also make some distortion and improvement, these all belong to protection scope of the present invention.Therefore, the protection domain of patent of the present invention should be as the criterion with claims.
Claims (9)
1. material vapour phase epitaxy Fan spray head structure, include an above intake ducting, it is characterized in that, described intake ducting is provided with the controller that detects and control induction air flow ratio and flow, be provided with independent isolating zone fan-shaped more than in described shower nozzle cavity, described area of isolation dual-side is provided with vertical division board, described area of isolation is provided with sealing plate between two division board tops, be provided with the baffle plate of giving vent to anger between bottom described area of isolation two division boards, be provided with the arc outside plate between the described area of isolation two deep far-ends of division board, described area of isolation two division boards, sealing plate, arc outside plate and give vent to anger formation individual cavity and isolation mutually between baffle plate, described area of isolation end sealing plate connects an intake ducting, the baffle plate of giving vent to anger of described area of isolation bottom is provided with one and above gas spout, be provided with circular reaction chamber below described shower nozzle, described circular reaction chamber is interior by emanant a plurality of shower nozzles of arranging.
2. a kind of material vapour phase epitaxy Fan spray head structure according to claim 1, is characterized in that, in described controller monitoring intake ducting, the flow velocity of gas, flow and adjusting make its uniform flow field, various gas barrier are come give management and control; Described intake ducting passes into different metal source or gas, independent management and control, and the gas barrier in area of isolation comes and gives respectively management and control.
3. a kind of material vapour phase epitaxy Fan spray head structure according to claim 1, is characterized in that, described area of isolation number arranges on year-on-year basis according to precursor and protective gas quantity.
4. a kind of material vapour phase epitaxy Fan spray head structure according to claim 1, is characterized in that, the aperture of described gas spout is according to the combined amount adjusting size of precursor and protective gas.
5. a kind of material vapour phase epitaxy Fan spray head structure according to claim 1, it is characterized in that, described shower nozzle outward appearance is fan-shaped, described shower nozzle adopts quartzy material, the gas of gas spout ejection from the baffle plate of giving vent to anger of shower nozzle, mix again in circular reaction chamber, form even hybrid reaction above substrate in circular reaction chamber, make the gas of ejection fully mix the rear more uniform flow field that forms in reaction zone above substrate.
6. a kind of material vapour phase epitaxy Fan spray head structure according to claim 1, is characterized in that, the area of isolation in described shower nozzle cavity has three: NH
3, GaCl and N
2Area of isolation, that described shower nozzle region intermediate passes into is N
2Area of isolation, both sides are respectively NH
3Area of isolation and GaCl area of isolation, three intake ductings connect respectively three fan-shaped area of isolation, process shunting or preheating in area of isolation, then the gas spout from the baffle plate of giving vent to anger is got rid of.
7. a kind of material vapour phase epitaxy Fan spray head structure according to claim 1, it is characterized in that, be provided with four ceramic showerhead in described circular reaction cavity and be cruciform and arrange, after gas sprays from shower nozzle, below circular reaction chamber mix, by the spinning of circular reaction chamber liner bottom tray, make mixture cover more equably substrate surface, residual gas is discharged reaction chamber by the exhaust intake ducting.
8. a kind of material vapour phase epitaxy Fan spray head structure according to claim 1, is characterized in that, the area of isolation in described shower nozzle cavity is five, at NH
3Respectively add a N with the GaCl outside
2Area of isolation, each shower nozzle has 3 N
2Area of isolation.
9. a kind of material vapour phase epitaxy Fan spray head structure according to claim 1, is characterized in that, is provided with eight shower nozzles in described circular reaction cavity, is emanant arrangement.
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Cited By (7)
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| CN103911657A (en) * | 2013-11-25 | 2014-07-09 | 东莞市中镓半导体科技有限公司 | Nozzle distribution mode for compound semiconductor large-area vapor phase epitaxy |
| DE102015118765A1 (en) | 2014-11-20 | 2016-06-09 | Aixtron Se | Device for coating a large-area substrate |
| DE102015101461A1 (en) | 2015-02-02 | 2016-08-04 | Aixtron Se | Device for coating a large-area substrate |
| CN105926035A (en) * | 2016-05-19 | 2016-09-07 | 广东省中科宏微半导体设备有限公司 | Gas inflow device for mixed crystal chemical vapor phase epitaxy |
| CN108048901A (en) * | 2017-12-19 | 2018-05-18 | 东莞市中镓半导体科技有限公司 | A kind of nozzle structure of hydride gas-phase epitaxy |
| CN108231632A (en) * | 2018-01-08 | 2018-06-29 | 德淮半导体有限公司 | nozzle and gas supply system |
| CN109839426A (en) * | 2017-11-28 | 2019-06-04 | 中国科学院大连化学物理研究所 | Method that is a kind of while improving transference tube interior air-flow and temperature uniformity |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103911657A (en) * | 2013-11-25 | 2014-07-09 | 东莞市中镓半导体科技有限公司 | Nozzle distribution mode for compound semiconductor large-area vapor phase epitaxy |
| DE102015118765A1 (en) | 2014-11-20 | 2016-06-09 | Aixtron Se | Device for coating a large-area substrate |
| DE102015101461A1 (en) | 2015-02-02 | 2016-08-04 | Aixtron Se | Device for coating a large-area substrate |
| CN105926035A (en) * | 2016-05-19 | 2016-09-07 | 广东省中科宏微半导体设备有限公司 | Gas inflow device for mixed crystal chemical vapor phase epitaxy |
| CN109839426A (en) * | 2017-11-28 | 2019-06-04 | 中国科学院大连化学物理研究所 | Method that is a kind of while improving transference tube interior air-flow and temperature uniformity |
| CN108048901A (en) * | 2017-12-19 | 2018-05-18 | 东莞市中镓半导体科技有限公司 | A kind of nozzle structure of hydride gas-phase epitaxy |
| CN108231632A (en) * | 2018-01-08 | 2018-06-29 | 德淮半导体有限公司 | nozzle and gas supply system |
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|---|---|
| CN103103501B (en) | 2016-05-11 |
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