WO2004024982A1

WO2004024982A1 - Film forming device

Info

Publication number: WO2004024982A1
Application number: PCT/JP2003/011599
Authority: WO
Inventors: Toru Inagaki; Kazuma Yamamoto; Takashi Yokoyama; Takahiro Shirahata
Original assignee: Air Water Inc.
Priority date: 2002-09-11
Filing date: 2003-09-10
Publication date: 2004-03-25
Also published as: TW200412375A; JP2004100001A; JP3869778B2

Abstract

A film forming device in which the injecting state of gas from each nozzle in a gas injection head is made appropriate. A gas injection head (7) in a processing space (1) comprises a number of spout sections (9) installed in a head surface (8) facing a treatment subject (5) for independently injecting individual processing gases, flow channels (16A, 17B, 18C) for introduction of individual processing gases, and flow channel members (10A, 11B, 12C) corresponding to individual processing gases, the flow channel members providing a laminated construction in which they are separated in a direction substantially along the head surface (8)to allow processing gases to be fed from nozzle-side flow channels (19A, 20B, 21C) of the flow channel members (10A, 11B, 12C) into the nozzles corresponding to the processing gases. Thereby, the individual processing gases are injected to the treatment subject (5) through the independent flow channels, so that film formation of good quality is attained.

Description

Description Coating equipment Technical field

The present invention relates to a film forming apparatus that supplies a plurality of types of processing gases into a processing space and forms a film on a surface of an object to be processed using the processing gases. Background art

Various types of film forming apparatuses of this type are known, but as a prior art that seems to be closest to the present invention, a “shower head structure and a processing apparatus of a processing apparatus” disclosed in Patent Document 1 below is disclosed.方法 Method of supplying processing gas ”. Hereinafter, the prior art shown in FIGS. 9 and 10 will be described.

The processing gas is blown out from the shower head body 61 attached to the processing container 60 in a vacuum state, and the processing gas is blown onto the surface of the semiconductor wafer W arranged in the processing container 60, and An oxide film for insulation and a metal film for wiring are formed on the surface. A column 62 is provided at the bottom of the processing container 60, and a mounting table 63 is coupled thereon. The semiconductor wafer W is mounted on the mounting table 63. Further, the mounting table 63 is heated by a heating lamp 64 disposed below the processing vessel 60 through a transmission window 65 made of quartz glass, and the semiconductor wafer W is heated to a predetermined temperature suitable for the processing. Is maintained.

The shower head body 61 is composed of an integrated upper block 66, middle block 67, and lower block 68 made of thick plate material. Each block has a raw gas supply path 69 A reducing gas supply path 70 is provided. Figure 10 shows the state where these supply channels 69 and 70 are branched. This is shown in the figure. The raw material gas supply passage 69 branches into two branches in the upper block 66 to form branch passages 69A and 69A, and these branch into two branches in the middle block 67, respectively. A branch path 69 B is formed, and further, four gas ejection paths 69 C are formed in the lower block 68.

Similarly, the reducing gas supply path 70 branches into two branches at the upper block 66 to form branch paths 70 A and 7OA, which further branch and bend at the middle block 67 respectively. Five branch paths 70 B are formed for convenience, and five gas ejection paths 70 C are formed in the lower block 68. In the above description, the gas outlet 69 C is described as four for convenience and the gas outlet 70 C is described as five for convenience, but these are the numbers in the cross section in Fig. 9 and Fig. When the block 68 is viewed from below, a number of gas ejection channels 69 C and 70 C are opened over the entire lower surface of the lower block 68.

In order to prevent the processing gas from being deposited in the gas ejection path 69 C of the lower block 68 by the radiant heat from the semiconductor wafer W and forming a film, the processing gas is attached to the main head body 61. A cooling water channel 71 is provided. The water channel 71 descends from near the end of the upper block 66, uniformly cools the gas ejection channels 69C and 70C of the lower block 68, and flows out from the upper block 66 on the opposite side. I'm going to go. In addition, the heating means 72 heats the middle block 67 and the upper block 66, which are less susceptible to radiant heat from the semiconductor wafer W, so that the processing gas is not liquefied or thermally decomposed. The exhaust passage 73 is connected to a vacuum pump (not shown) to evacuate the inside of the processing vessel 60 during film formation.

Japanese Patent Application Laid-Open No. Hei 8-2991385 Problems the invention is trying to solve

In the case of the shower head main body 61 as described above, the flow paths of the raw material gas and the reducing gas are arranged in the thickness direction of the upper block 66, the middle block 67, and the lower block 68, respectively. , 68 through. At the same time, the source gas supply passage 69 and the reducing gas supply passage 70 are complicatedly branched in the upper block 66 and the middle block 67, so that the gas ejection passages 69C and The flow path configuration is such that the flow resistance of each flow path reaching 0 C is difficult to equalize. In particular, the processing gas that has flowed into the upper block 66 is, for example, a material gas supply path 69, and a portion where the flow path is bent at a substantially right angle is a gas ejection path 69C of the lower block 68. Up to four locations, the increase in flow path resistance and pressure loss due to such a large number of bends will have a significant effect on the state of gas ejection.

Therefore, the flow rate of the processing gas ejected from the gas ejection paths 69 C and 70 C varies, and the crystal growth on the surface of the semiconductor wafer W becomes uneven, and the thickness of the crystal film and other film formations Quality requirements are not satisfactory. Such a problem occurs because the processing gas such as the source gas and the reducing gas passes through the blocks 66, 67, and 68 in the thickness direction, and passes through the branches. Configuration is the root cause.

Each of the upper block 66 and the middle block 67 is provided as a structure for branching the flow path of the processing gas, and finally, a large number of gas ejection paths 6 9 C, It has a structure in which 70 C is formed. For this reason, it is necessary to form a plurality of completely different flow paths for each processing gas in each of the blocks 66, 67, and 68, so that the flow path structure of each block becomes very complicated. Moreover, it is not advisable to control the production of each block. In addition, the complicated and diverse flow path configuration as described above increases the residence volume of the processing gas in the shower head. Therefore, the residual gas generated during the formation of the multilayer film may not be completely removed, thereby making it impossible to properly perform ALD (atomic layer deposition).

When the blocks 66, 67, 68 are stacked and integrated, for example, the branch path 70A of the upper block 66 and the branch path 70B of the middle block 67 are accurately communicated. This makes it extremely difficult in terms of assembly accuracy.If such an incompatibility is not properly secured, the flow area of the processing gas is reduced at this communication point, and the appropriate flow rate is reduced. As a result, the quality of the film can be adversely affected. In addition, if the branch paths 70A and 70B are displaced from each other at the communication point, a turbulent flow is generated in the flow of the processing gas there, so that the gas cannot be supplied properly.

Further, the cooling water passage 71 uniformly cools the gas ejection passages 69 C and 70 C of the lower block 68, and the heating block 72 makes it difficult to receive the radiant heat from the semiconductor wafer W. And the upper block 66 are heated, so that it is not possible to control at different temperatures suitable for each processing gas for each source gas and reducing gas.

The present invention has been made in view of such circumstances, and an object of the present invention is to provide a film forming apparatus in which a gas ejection state from each nozzle of a gas ejection head is optimized. Disclosure of the invention

In order to achieve the above object, a film forming apparatus of the present invention has a gas ejection head for supplying a plurality of kinds of processing gases in a processing space, and forms a film on a surface of an object to be processed by the processing gas. A gas jet head, wherein each of the gas jet heads independently jets a processing gas onto a head surface facing the object to be processed. Each of the gas ejection heads includes a flow path member having a flow path into which each processing gas is independently introduced, and a flow path member corresponding to each processing gas. The flow path member has a laminated structure separated in a direction substantially along the head surface, and the processing gas flows from the flow path of each flow path member to the nozzle corresponding to the processing gas. The gist is that it is configured to be supplied.

That is, in the film forming apparatus of the present invention, the gas ejection head is provided with a plurality of nozzles for independently ejecting each processing gas on a head surface facing the object side, The ejection head has a flow path member into which each processing gas is independently introduced, and is constituted by flow path members corresponding to each processing gas, and each of the flow path members has a head surface. It has a laminated structure that is separated in a direction substantially along the direction, and is configured such that the processing gas is supplied from the flow path of each flow path member to the nozzle corresponding to the processing gas.

With the above-described configuration, one type of processing gas supplied to the flow path of the specific flow path member is branched in the flow path member and is directed to a nozzle for the processing gas. Further, other types of processing gases supplied to the flow paths of the other flow path members are also directed to the nozzles for the processing gases through the same circulation process. Since each processing gas is circulated to the nozzle in each of the flow path members having the laminated structure as described above, the structure for arranging the flow path of the processing gas toward the nozzle is simplified. The flow resistance in the passage is also easy to be uniform, and as a result, the amount of gas ejected from a large number of nozzles is made as uniform as possible, so that a stable film formation can be performed and a good film formation quality can be obtained. available. In addition, since such a stable film formation proceeds, the time required for the film formation is shortened, which is effective for improving productivity.

For example, the flow path of each flow path member is located in a direction substantially along the head surface. After being extended to a certain point, it is turned to the nozzle for the process gas. Since the processing gas can be ejected from a number of nozzles based on such a flow path configuration, the gas flow path is bent at one point in this case, and the flow path resistance increases as described above. The problem of pressure loss can be avoided. In addition, since the flow path members are stacked substantially along the head surface, the flow path of the processing gas can be sufficiently provided over the entire area of the flow path members by utilizing the thickness of the flow path members. As a result, it becomes easier to direct the processing gas to a large number of nozzles for each processing gas.

In the film forming apparatus of the present invention, in the case where a plurality of processing gas jetting parts provided in close proximity to nozzles for jetting plural kinds of different processing gases are arranged at predetermined intervals on the head surface. In the above, the flow path of the processing gas obtained by the flow path configuration in each flow path member laminated as described above is opened in the head surface in the state of a nozzle to constitute the ejection section, Since the plurality of ejection parts are arranged at predetermined intervals, the amount of processing gas ejected from each ejection part can be made as uniform as possible with respect to the object to be processed. The best processing gas atmosphere is obtained for film formation. In addition, if there is a slight difference in the amount of processing gas ejected from a plurality of ejection parts, increase the arrangement density of the ejection parts with a small amount of ejection to increase the processing gas emission relative to the workpiece. It is possible to optimize the ejection state.

In the film forming apparatus of the present invention, the ejection section has a multi-layered structure in which nozzle openings and / or nozzle tubes for ejecting a plurality of different processing gases independently are concentrically arranged. If the nozzle has an opening near the pad surface and is connected to the flow path member so as to communicate with the flow path of the flow path member through which the processing gas to be ejected by the nozzle pipe is introduced, the nozzle pipe is concentric. The nozzle opening and the Z or nozzle tube arranged in the above are respectively connected to the flow path of the flow path member for introducing a plurality of different processing gases. Therefore, different processing gases are ejected concentrically in an annular layer. Then, such eruptions are made in the vicinity of the head surface. Therefore, various kinds of processing gases are mixed or reacted well for film formation at or near the position where the processing gas is discharged from the nozzle opening Z or the nozzle tube. Furthermore, since the nozzle pipe is connected to the flow path of the flow path member, the nozzle pipe functions as a knock pin for positioning when the flow path members are stacked and assembled, thereby simplifying the assembly operation. And assembling accuracy is improved.

In the film forming apparatus of the present invention, when the nozzle tube located closer to the inside of the multiplex structure is connected to a flow path member disposed farther from the workpiece, the nozzle tube located at the inner side Since the pipe is connected to the flow path member located farther from the workpiece, the processing gas from the flow path member farther away can be ejected by the nozzle pipe as an independent flow path. . Similarly, since the outer nozzle pipe of the inner nozzle pipe is connected to the flow path member closer to the workpiece than the flow path member, a different processing gas is supplied to the outer nozzle pipe. It can be ejected from the pipe as an independent flow path. In other words, since different processing gases are introduced into each of the laminated flow path members, the processing gases can be ejected from the concentric nozzle tubes in an independent flow path form. .

In the film forming apparatus of the present invention, in the gas ejection head, a flow path member located at least on the processing object side of each flow path member, and a flow path member located on the opposite side to the processing object. If the temperature is controlled independently of each other, the flow path member (head surface) located on the side of the workpiece is appropriately cooled against radiant heat from the workpiece. It is possible to prevent the processing gas from decomposing or forming a film at or near the jetting portion, ie, the nozzle opening and / or the nozzle tube. Wear. In addition, by heating the flow path member until the flow path member is heated by radiant heat from the object to be processed, when a gas having a low dew point and easy to condense at a low temperature is used as a processing gas, the flow rate is reduced. It is possible to prevent the processing gas from condensing in the road and prevent a film formation defect due to insufficient jetting of the processing gas.

Also, in the flow path member located on the opposite side of the processing target, the flow path member to which radiant heat from the processing target is difficult to receive is subjected to appropriate temperature control, so that a processing gas having a low dew point is used. When this occurs, condensation is prevented and normal processing gas can be supplied. Then, as described above, by independently controlling the temperature of the flow path member located on the processing object side and the flow path member located on the opposite side to the processing object, it is possible to correspond to each flow path member. The most suitable temperature control can be performed on the processed gas, and the properties of the injected processing gas become optimal for film formation.

In the film forming apparatus of the present invention, when the gas ejection head is configured such that the temperature of each channel member is independently controlled, the gas ejection head is adapted to the processing gas corresponding to each channel member. Since the temperature control is performed for each flow path member, the temperature control state of the entire gas ejection head can be optimized for the properties of the processing gas.

In the film forming apparatus of the present invention, each of the flow path members is provided with a diffusion chamber for temporarily holding the introduced processing gas, and the volume of the diffusion chamber is sufficiently smaller than the size of the flow path member. When the diffusion chamber is set so that the volume of the diffusion chamber is set to be sufficiently smaller than the size of the flow path member, the dimensions such as the thickness of the flow path member for the diffusion chamber arrangement must be reduced. There is no need to increase the size, and the gas ejection head can be made compact. Furthermore, by reducing the volume of the diffusion chamber, the processing gas is temporarily held at a somewhat high pressure in the small-volume diffusion chamber. Therefore, the supply gas pressure for each flow path can be maintained high, and the processing gas can be ejected without shortage.

Then, as the diffusion chamber is reduced in volume, the volume required for the flow of the processing gas in each flow path member is significantly reduced. Therefore, when a multilayer film is formed by changing the type of processing gas, the amount of residual gas is reduced and the type of processing gas is changed quickly. For example, the first film is changed to the second film. The sharpness at the time of forming a so-called multilayer film can be obtained favorably. Such an effect becomes more remarkable due to the simplification of the flow path as described later.

In the film forming apparatus of the present invention, the flow path includes an introduction-side flow path that guides the introduced processing gas to the diffusion chamber, and a nozzle-side flow path that extends from the diffusion chamber and supplies the processing gas to each nozzle. In this case, the processing gas from the introduction-side flow path is temporarily held in the diffusion chamber, and is supplied to the plurality of ejection sections via the nozzle-side flow path extending from the diffusion chamber. The processing gas is blown out. Since the nozzle-side flow path extends from the diffusion chamber toward a number of nozzles, the structure is such that the diffusion chamber is arranged at the branch of the nozzle-side flow path, and as described above, the flow path resistance and pressure loss And a flow path configuration with a small amount of water. In the film forming apparatus of the present invention, the diffusion chamber is provided near a substantially central portion of each flow path member, and the processing gas is supplied to each nozzle via a nozzle-side flow path extending radially from the diffusion chamber. In this case, the length of the nozzle-side flow path from the diffusion chamber located at the approximate center of each flow path member to each nozzle can be made as uniform as possible. Therefore, variations in the injection amount from each nozzle can be reduced. BRIEF DESCRIPTION OF THE FIGURES

FIG. 1 is a sectional view showing a film forming apparatus according to an embodiment of the present invention. FIG. 2 is an enlarged view of the film forming apparatus.

3A is a plan view of the gas ejection head, and FIG. 3B is a plan view showing an opening of the nozzle tube.

FIG. 4 is a sectional view showing a modified example of the nozzle tube.

FIG. 5 is a cross-sectional view showing a modification of the flow path member.

FIG. 6 is a sectional view showing another modified example of the flow path member.

FIG. 7A is a cross-sectional view of a gas ejection head according to the second embodiment, and FIGS. 7B and 7C are plan views showing positions of nozzle openings.

FIG. 8 is a plan view showing a processing state of the flow path member.

FIG. 9 is a cross-sectional view showing a conventional film forming apparatus.

FIG. 10 is an exploded cross-sectional view of the block body of the film forming apparatus. BEST MODE FOR CARRYING OUT THE INVENTION

Next, embodiments of the present invention will be described in detail.

FIG. 1 shows an embodiment of the film forming apparatus of the present invention. In this apparatus, a separation plate 3 is provided in a processing vessel 2 having a processing space 1 inside, and a wafer 5 (e.g., a semiconductor) to be processed is aligned with an opening 4 opened in the separation plate 3. Wafer) is placed. A heater H is arranged above the back surface of the wafer 5. A vacuum pump (not shown) for evacuating the processing space 1 is provided, and the air in the processing space 1 is sucked from the exhaust port 6.

In order to supply a processing gas to the wafer 5, a gas ejection head 7 is arranged in the processing space 1. The surface of the wafer 5 is subjected to CVD (Chemical 1 Vapor Deposition) processing by the processing gas injected from the gas blowing head 7, and an oxide film for insulation and a metal film for wiring are formed. A film is formed. The gas ejection head 7 shown in the figure has three types of processing gas A, B and C are ejected, and a plurality of ejection portions 9 are arranged on a head surface 8 facing the wafer 5. As shown in FIG. 3, the head surface 8 has a plurality of the ejection portions 9 arranged at predetermined intervals.

The flow path members 1 OA, 11 B, and 12 C made of a thick plate-like material for each of the processing gases A, B, and C have a laminated structure. Each of the flow path members 10 A, 11 B , 12 C are arranged along the head surface 8. Diffusion chambers 13A, 14B, and 15C are located in the center of each flow path member 10A, 11B, and 12C, and each diffusion chamber has a processing gas supply source (shown in the figure). ) Through the inlet side flow passages 16 A, 17 B, and 18 C from the inside of each flow passage member 10 A, 11 B, and 12 C. The flow path is arranged. Therefore, each flow path member 10 A, 11 B, 12. Are provided for each of the processing gases B, C, and accordingly, the diffusion chambers 13 A, 14 B, 15 C, the inlet side passages 16 A, 17 B, 18 C and the nozzle side passage 1 9 A, 20 B and 21 C are provided exclusively for the respective processing gases A, B and C. In addition, the nozzle-side flow paths 19 A, 20 B, 21 C extend radially from the diffusion chambers 13 A, 14 B, 15 C toward the ejection section 9. The state of the radial arrangement is shown in the processing diagram of the flow path member 10A in FIG.

The diffusion chambers 13 A, 14 B, and 15 C are provided near the center of each of the flow path members 10 A, 11 B, and 12 C, and extend radially from the diffusion chamber. Since the processing gas is supplied to each nozzle via 19 A, 20 B, and 21 C, it is located approximately in the center of each of the flow path members 10 A, 11 B, and 12 C. Nozzle-side flow paths 19 A, 20 B, 21 C from the diffusion chambers 13 A, 14 B, 15 C to each nozzle can be made as uniform as possible. As a result, the flow resistance of the processing gas is also made more uniform, and the variation in the injection amount from each nozzle can be reduced.

The jetting section 9 independently jets a plurality of different processing gases A, B, and C. The nozzle opening and / or nozzle tube to be discharged is composed of a small-diameter nozzle tube 22, a large-diameter nozzle tube 23 concentrically arranged outside the nozzle tube 23, and a nozzle opening 24 further arranged outside the nozzle tube 22. Have been. The nozzle pipes 22 and 23 having the multi-structure are connected to a flow path member 10 A in which a small-diameter nozzle pipe 22 located on the inner side is located farther from the wafer 5. The large-diameter nozzle pipe 23 located outside the pipe 22 is connected to the flow path member 11 B closer to the wafer than the flow path member 10 A.

Due to the flow path formation as described above, the processing gas A flows through the nozzle flow path 22 A in the nozzle pipe 22 and is supplied to the jetting section 9, and the processing gas B flows through the nozzle pipe 22 and the nozzle pipe 23. The processing gas C is supplied to the jetting section 9 through the nozzle flow path 23 B formed by the gap between the nozzles 23, and the processing gas C is supplied to the jetting section 9 from the nozzle opening 24 formed outside the nozzle pipe 23. You. Therefore, since different processing gases are introduced into each of the laminated flow path members 10A, 11B, and 12C, the processing gases A, B, and C flow independently. It can be ejected from each concentric nozzle pipe 22, 23 in the form of a road. '

With the above configuration, supply to the flow paths 16 A, 17 B, 18 C and 19 A, 20 B, 21 C of the flow path members 10 A, 11 B, 12 C The plurality of different processing gases A, B, and C are branched in the flow path members 10 A, 11 B, and 12 C to form nozzle pipes 22, 23, and Z for the processing gas. Or, it is directed toward nozzle opening 24. In each of the flow path members 10 A, 11 B, and 12 C having the laminated structure as described above, each processing gas A, B, and C is circulated toward the jetting part 9, so that the gas flows toward the jetting part 9. The routing structure of the processing gas A, B, and C flow passages is simplified, and accordingly, the flow passage resistance in each flow passage is easily made uniform. Is made as uniform as possible, and stable film formation progresses. Good film formation quality can be obtained.

As described above, the processing gases A, B, and C flowing into the flow paths 19, 20B, and 21C of the flow path members 10A, 11B, and 120 are separated from the head surfaces 8A, 11B, and 21C, respectively. After being supplied to a predetermined point in a direction substantially along the nozzle, it is turned to a nozzle for the processing gas. Since the processing gas can be ejected from a large number of ejection sections 9 based on such a flow path configuration, the bending point of the gas flow path becomes one in this case, and the flow path resistance increases and the pressure loss decreases. The problem can be avoided. Further, since the flow path members 10A, 11B, and 12C are laminated substantially along the head surface 8, the thickness of the flow path member is utilized by utilizing the thickness of the flow path member. A sufficient flow path of the processing gas can be ensured over the entire region, which makes it easier to direct the processing gas to a large number of nozzle pipes 22, 23 and nozzle openings 24 for each processing gas.

Since the plurality of ejection parts 9 are arranged at predetermined intervals, the amount of the processing gas ejected from each ejection part 9 can be made as uniform as possible with respect to the wafer 5. The best processing gas atmosphere for film formation can be obtained. In the case where a slight difference occurs in the amount of processing gas ejected from the plurality of ejection parts 9, the arrangement density of the ejection parts 9 having a small amount of ejection is increased to increase the processing gas for the wafer 5. It is possible to optimize the jetting condition.

The concentrically arranged nozzle openings 24 and / or nozzle tubes 22, 23 are provided with the flow path members 10 A, 11 B, 1 through which a plurality of different types of processing gases A, B, C are introduced. Since they are connected to the 2C flow paths, different processing gases are ejected concentrically in an annular layer. Then, such ejection is performed in the vicinity of the head surface 8. Therefore, the various processing gases A, B, and C are good for forming a film at or near the location ejected from the nozzle opening 24 and / or the nozzle pipes 22 and 23. Mixing or reaction takes place. Further, since the nozzle pipes 22 and 23 are fitted into the flow paths of the flow path members 10A, 11B and 12C, the nozzle pipes are stacked and assembled when assembled. 22 and 23 function like knock pins for positioning, simplifying assembly work and improving assembly accuracy.

In the gas ejection head 7, at least one of the flow path members 10A, 11B, and 12C is positioned on the wafer 5 side, and the flow path member 12C is positioned on the opposite side to the wafer 5. The temperature of the flow path member 10A is controlled independently of each other. For this purpose, the flow path member 12C is provided with a cooling conduit 25 for guiding cooling water as a temperature control fluid as shown in FIGS. The cooling conduits 25 are arranged so that the surface of the flow path member 12 C is along the head surface 8, and cool the radiant heat from the wafer 5 to the head surface 8 as uniformly as possible. As shown in FIG. 3 (A), a curved flow path is formed over the entire area of the head surface 8.

As a result, the flow path member 12 C (head surface) located on the wafer 5 side is appropriately cooled with respect to the radiant heat from the heated wafer 5. In addition, it is possible to prevent decomposition of the processing gases A, B, and C in and around the nozzle pipes 22 and 23 and the nozzle pipes 22 and 23 and prevent the film formation phenomenon from occurring.

Until the flow path member 12C is heated by the radiant heat from the wafer 5, the flow path member 12C can be heated by flowing hot water through the cooling conduit 25. In this way, when a gas having a low dew point and a low temperature that easily condenses is used as the process gas C, it is possible to prevent the process gas from condensing in the flow path, and to form a film due to insufficient ejection of the process gas C. Can be prevented. The temperature control medium flowing through the cooling pipe 25 is not limited to water, but may be an appropriate fluid such as oil or gas. Also in the flow path member 10 A located on the opposite side of the wafer 5, the heating heater 26 is arranged near the flow path member 10 A in order to perform appropriate temperature control. By doing so, the flow path member 10 A to which the radiant heat from the wafer 5 is less likely to be subjected to appropriate temperature control, so that when a processing gas having a low dew point in the flow path member 10 A is used, Prevention of condensation and normal supply of processing gas is possible. As described above, by independently controlling the temperature of the flow path member 12 C located on the wafer 5 side and the flow path member 10 A located on the opposite side of the wafer 5, The most suitable temperature control can be performed for the processing gases C and A corresponding to the respective flow path members 12 C and 10 A, and the properties of the injected processing gas are optimal for film formation. . In the gas ejection head 7, although not shown, in order to independently control the temperature of each of the flow path members 10 A, 11 B, and 12 C, the flow path members 11 B Through a water pipe for temperature control. By doing so, the temperature control adapted to the processing gases A, B, C corresponding to the respective flow path members 10A, 11B, 12C can be performed by the respective flow path members 10A, 11B, Since the temperature control is performed every 12 C, the temperature control state of the entire gas ejection head 7 can be optimized for the properties of the processing gas and the like. The temperature control medium flowing through the water pipe is not limited to water, but may be an appropriate fluid such as oil or gas.

Each of the flow path members 10A, 11B, and 12C is provided with diffusion chambers 13A, 14B, and 15C for temporarily holding the introduced processing gases A, B, and C. The volume of the diffusion chamber is set to be sufficiently smaller than the size of the flow path members 10A, 11B, and 12C. From the diffusion chambers 13A, 14B, and 15C, the processing gas A is directed toward a number of nozzles in the flow path members 10A, 11B, and 12C in which the diffusion chambers are arranged. , B, C Nozzle side flow path 19 A, 20 B, 21 C Even in this case, a diffusion chamber is arranged in the branch of the nozzle-side flow paths 19 A, 2 OB, and 21 C, and a flow path configuration with low flow resistance and low pressure loss can be obtained as described above. . In addition, since the volumes of the diffusion chambers 13A, 14B, and 15C are set to be sufficiently smaller than the size of the flow path members 10A, 11B, and 12C, the diffusion It is not necessary to increase the dimensions such as the thickness of the flow path member for the arrangement of the chamber, and the gas ejection head 7 can be made compact. Furthermore, by reducing the volume of the diffusion chambers 13A, 14B, and 15C, the processing gases A, B, and C are temporarily held at a somewhat higher pressure in the small-volume diffusion chamber, and the Since the gas is supplied to the nozzle from the state, the supply gas pressure for each channel can be maintained high, and the processing gas can be ejected without shortage.

Each of the diffusion chambers 13A, 14B, and 15C has a small volume, and the flow path members 10A, 11B, and 12C have simplified flow paths. The volume required for the flow of processing gases A, B, and C in the road members is significantly reduced. Therefore, when a multilayer film is formed by changing the type of the processing gas, the amount of the residual gas is reduced and the type of the processing gas can be changed quickly, for example, from the first film formation to the second film formation. The sharpness at the time of forming a so-called multilayer film can be obtained favorably.

As shown in FIG. 4, the processing gas jetting portion 9 is open near the head surface 8. The processing gas A, B injected to the wafer 5, and the state of mixing and reaction are more clearly shown. In order to improve, it is advisable to make the injection part 9 protrude from the head surface 8. Fig. 3 (B) and Fig. 4 show that small, medium and large diameter nozzle pipes 22, 27, and 23 are arranged in three layers so that three types of processing gas are discharged. . Fig. 4 (A) shows the case where the nozzle tubes 22, 27, and 23 all have the same protruding length. (B) shows the case where the nozzle tubes 22, 27, and 23 are cut obliquely and the end faces of each tube are aligned on one virtual plane. You. (C) shows the case where the inner nozzle tube is shorter. (D) is a case in which the ends of the nozzle tubes 22, 27, and 23 are obliquely cut in the form as in (C).

In FIGS. 1 and 2, etc., the inlet side flow paths 16A, 17B, 18C and the nozzle side flow paths 19A, 20B, 21C etc. are the flow path members. In this case, it can be replaced with the form shown in Fig. 5. That is, as shown in the flow path member 11B shown in the cross-sectional state of FIG. 5, the introduction-side flow path 17B is formed in the state of a groove on the upper surface side of the flow path member 11B, and this is the diffusion chamber. It is open to 1 4B. The diffusion chamber 14B is also provided with a recess from the lower surface side of the flow path member 11B. Further, the nozzle side flow path 20B extending from the diffusion chamber 14B to each nozzle is also formed in a groove state on the lower surface side of the flow path member 11B. Reference numerals 28 and 29 are cover plates that seal the groove-shaped nozzle-side flow path 19A and the introduction-side flow path 18C. By adopting such a configuration, the flow path members 10A, 11B, and 12C can be manufactured by, for example, die casting, and the manufacturing cost can be significantly reduced.

Further, as shown in FIG. 6, one channel member may be constituted by a plurality of components. Here, the flow path member 10 A is taken as an example, and the upper plate 30 is formed with a recess 31 forming a part of the diffusion chamber 13 A and a nozzle-side flow path 19 A, and the lower plate 30 is formed. A recess 33, which constitutes a part of the diffusion chamber 13A, and a flow path 16A on the inlet side are formed in 32, and the upper plate 30 and the lower plate 32 are integrated by adhesive or welding. . In such a structure, the flow path member is manufactured by, for example, die force storage, and the manufacturing cost can be significantly reduced.

In addition, the head surface 8 is usually formed in a flat shape. However, the boundary surface between the adjacent flow path members is inclined or concaved due to the shape and dimensions of the internal flow path of the flow path member. It can be convex. By doing this, The shape of the flow path member can be freely selected, and the flow of the processing gas can be optimized so as to obtain better film quality.

FIG. 7 shows another embodiment of the gas ejection head in the film forming apparatus of the present invention.

In this embodiment, the flow paths branched from the respective nozzle-side flow paths 19 A, 20 B, 21 C are opened as the nozzle openings 34 A, 35 B, 36 C in the injection section 9. If you are. Each nozzle opening 348, 358, 36. Can be arranged close to each other in the form of an equilateral triangle as shown in Fig. (8), and arranged close to one straight line as shown in Fig. (C). This is also possible. The other parts are the same as those in the above embodiment, and the same parts are denoted by the same reference numerals.

With the above-described configuration, the ejection section 9 can be manufactured with a simple structure without using components such as the nozzle tubes 22, 27, and 23 described above. Except for the above, the same operation and effect as those of the above embodiment can be obtained.

FIG. 8 is an explanatory diagram in the case where the flow path member 10A is manufactured by machining. A plurality of diametrical holes 38 are made in a thick circular material plate 37, and these holes 38 are assumed to form a nozzle-side flow path 19A, and a central portion where each hole 38 intersects A diffusion chamber 13 A is formed by providing a recess 39 in the cavity. The smallest diameter nozzle pipe 22 is connected to the hole indicated by reference numeral 40. Further, the opening end on the outer peripheral side of each hole 38 is closed with a plug 41.

The laminated flow path members 10A, 11B, and 12C are firmly connected by bolts penetrating the flow path members, and the ends of the flow path members are denoted by reference numerals 42 in FIG. Can be integrated by welding at the welds indicated by, or by bonding with an adhesive or the like.

In the above embodiment, there is a case where one diffusion chamber 13 A, 14 B, 15 C is disposed in each of the flow path members 10 A, 11 B, 12 C, respectively. , It is also possible to arrange a plurality, for example, two, of the diffusion chambers in each flow path member or a specific flow path member, and freely select the distribution of the processing gas. The invention's effect

As described above, according to the film forming apparatus of the present invention, with the above configuration, one type of processing gas supplied to the flow path of a specific flow path member is branched in the flow path member. It is directed towards a nozzle for the process gas. Further, another type of processing gas supplied to the flow path of another flow path member is also directed to a nozzle for the processing gas through a similar circulation process. Since each processing gas is circulated toward the nozzle in each of the stacked flow path members, the structure for routing the processing gas flow path toward the nozzles is simplified. Also, the flow resistance in the nozzle becomes easy to be uniform, and as a result, the amount of gas ejected from a large number of nozzles is made as uniform as possible, so that a stable film formation can be performed and good film formation quality can be obtained. In addition, since such a stable film formation proceeds, the time required for the film formation is shortened, which is effective for improving productivity.

For example, the processing gas that has flowed into the flow path of each flow path member is extended to a predetermined position in a direction substantially along the head surface, and is then diverted toward a nozzle for the processing gas. You. Since the processing gas can be ejected from a large number of nozzles based on such a flow path configuration, the gas flow path is bent at only one point in this case, thus increasing the flow path resistance as described above. The problem of pressure loss can be avoided. In addition, since the flow path members are laminated substantially along the head surface, a sufficient flow path of the processing gas is secured over the entire flow path member by utilizing the thickness of the flow path member. This makes it easier to direct the processing gas to a number of nozzles for each processing gas.

Claims

The scope of the claims

1. A film forming apparatus that has a gas ejection head for supplying a plurality of types of processing gases into a processing space, and forms a film on a surface of an object to be processed with the processing gas, wherein the gas ejection head is Has a large number of nozzles for independently ejecting each processing gas on the head surface facing the workpiece,

The gas ejection head is configured by a flow path member having a flow path into which each processing gas is independently introduced, and a flow path member corresponding to each processing gas. It has a laminated structure in which the flow path members are separated in a direction substantially along the head surface,

A film forming means for supplying a processing gas from a flow path of each of the flow path members to a nozzle corresponding to the processing gas.

2. The film forming method according to claim 1, wherein a plurality of nozzles for ejecting a plurality of different kinds of processing gases are provided in close proximity to the head surface at predetermined intervals. apparatus.

3. The jetting part has a multi-layered structure in which nozzle openings and / or nozzle pipes for independently jetting a plurality of different processing gases are arranged concentrically. 3. The film forming apparatus according to claim 2, wherein the film forming apparatus has an opening in the vicinity and is connected to the flow path member so as to communicate with a flow path of the flow path member into which the processing gas to be ejected by the nozzle pipe is introduced.

4. The film forming apparatus according to claim 3, wherein the nozzle pipe is connected to a flow path member that is disposed on a side farther from the object to be processed as the nozzle pipe is positioned inside the multiplex structure.

5. In the gas ejection head, the temperature of at least one of the flow path members located on the processing object side and the flow path member located on the side opposite to the processing object are independently controlled. Any of claims 1 to 4 that are controlled The film forming apparatus according to claim 1.

6. The film forming apparatus according to claim 5, wherein in the gas ejection head, the temperature of each of the flow path members is independently controlled.

7. Each of the flow path members is provided with a diffusion chamber for temporarily holding the introduced processing gas, and the volume of the diffusion chamber is set to be sufficiently smaller than the size of the flow path member. A film forming apparatus according to any one of claims 1 to 6.

8. The flow path includes an introduction-side flow path that guides the introduced processing gas to the diffusion chamber, and a nozzle-side flow path that extends from the diffusion chamber and supplies the processing gas to each nozzle. The film forming apparatus as described in the above.

9. The diffusion chamber is provided near a substantially central portion of each flow path member, and the processing gas is supplied to each nozzle via a nozzle-side flow path extending radially from the diffusion chamber. Item 10. The film forming apparatus according to Item 8.