JP2024510364A - Gas injector for epitaxy chamber and CVD chamber - Google Patents

Abstract

TECHNICAL FIELD This disclosure relates generally to gas injection apparatus for processing chambers that process semiconductor substrates. A gas injection device includes one or more gas injectors configured to be coupled to the processing chamber. Each of the gas injectors is configured to receive a process gas and distribute the process gas to one or more gas outlets. A gas injector includes a plurality of passages, a fin array, and a baffle array. Gas injectors are heated individually. A mixed gas assembly is also utilized to control the concentration of process gas entering the process space from each of the gas injectors. The mixed gas assembly allows the concentration and flow rate of process gases to be controlled.
[Selection diagram] Figure 4A

Description

Embodiments of the present disclosure generally relate to apparatus and methods for making semiconductor substrates. More specifically, the apparatus disclosed herein relates to components for gas injection within semiconductor processing.

Semiconductor substrates are processed for a variety of applications, including the manufacture of integrated devices and microdevices. During processing, a substrate is placed on a susceptor within a processing chamber. The susceptor is supported by a support shaft rotatable about a central axis. By precisely controlling a heat source, such as a plurality of heat lamps disposed above and below the substrate, the substrate can be heated within very tight tolerances. The temperature of the substrate can affect the uniformity of material deposited on the substrate.

The ability to accurately control substrate temperature within a processing chamber has a significant impact on throughput and production yield. Conventional processing chambers have difficulty meeting the increasing demands for increased production yields and faster throughput while meeting the temperature control standards necessary for manufacturing next generation devices.

Accordingly, a need exists for improved processing chambers and gas injection devices that allow for low cost replacement of hardware components and provide enhanced control of gas flow across the substrate.

In one embodiment of the present disclosure, a gas injector is described for use within a processing chamber. The gas injector includes an injector base and an injector insert coupled to and extending outwardly from the injector base. The injector insert includes a gas introduction passage, a gas diffusion passage, and an outlet opening. A gas introduction passageway is disposed through the injector base and fluidly coupled to the injector insert. A gas diffusion passage is coupled to the gas introduction passage to form a gas distribution tree. An outlet opening is disposed through the injection face of the injector insert opposite the gas introduction passageway and is in fluid communication with the gas diffusion passageway.

In other embodiments, a chamber for substrate processing is described. A processing chamber includes a base ring, an injection ring, and one or more gas injectors. A base ring includes a substrate transfer passageway and one or more upper chamber exhaust passageways disposed therethrough. An injection ring is disposed above the base ring and one or more injector passageways are disposed through the injection ring. One or more gas injectors are each disposed within one of the injector passages. Each of the gas injectors includes an injector base configured to couple to an injector support surface of an injection ring and an injector insert extending outwardly from the injector base. The injector insert includes a gas introduction passageway, a gas diffusion passageway, and an outlet opening disposed through the injection face of the injector insert opposite the gas introduction passageway and in fluid communication with the gas diffusion passageway. .

In other embodiments, a mixed gas assembly for use in a thermal processing chamber is described. A mixed gas assembly includes a process gas supply, a gas reservoir, an exhaust directing valve, an exhaust pump, a plurality of splitter valves, a processing chamber, and a master flow controller. A gas reservoir is fluidly coupled to the process gas supply. An exhaust diversion valve is fluidly coupled to the gas reservoir. An exhaust pump is fluidly coupled to the exhaust diversion valve. A plurality of splitter valves are arranged in parallel and fluidly coupled to the gas reservoir. A processing chamber includes a processing volume in fluid communication with each of the splitter valves. A master flow controller is configured to control flow through the exhaust diversion valve and each of the plurality of splitter valves.

In order that the above-described features of the disclosure may be understood in detail, a more specific description of the disclosure may be obtained by reference to the embodiments briefly summarized above, some of which are attached. shown in the drawing. It is noted, however, that the accompanying drawings depict only exemplary embodiments and therefore should not be considered as limiting the scope of the disclosure; other equally valid embodiments may also be tolerated.

1 is a schematic diagram of a processing chamber according to an embodiment of the present disclosure. FIG. 1 is a schematic cross-sectional view of a chamber body assembly according to an embodiment of the present disclosure; FIG. 2B is a schematic cross-sectional view of the chamber body assembly of FIG. 2A through another plane, according to an embodiment of the present disclosure; FIG. FIG. 2 is a schematic cross-sectional view of a base ring according to an embodiment of the present disclosure. 3B is a schematic plan view of the base ring of FIG. 3A, according to an embodiment of the present disclosure; FIG. 3C is a schematic cross-sectional plan view of the base ring of FIG. 3A taken along section line 3C-3C, according to an embodiment of the present disclosure; FIG. 1 is a schematic cross-sectional view of an injection ring, according to an embodiment of the present disclosure; FIG. 4B is a schematic plan view of the injection ring of FIG. 4A, according to an embodiment of the present disclosure; FIG. 1 is a schematic isometric view of a gas injector, according to an embodiment of the present disclosure; FIG. 5B is a schematic cross-sectional view of the gas injector of FIG. 5A taken along section line 5B-5B, according to an embodiment of the present disclosure; FIG. 5C is a schematic cross-sectional top view of the gas injector of FIG. 5A taken along section line 5C-5C, according to an embodiment of the present disclosure; FIG. 5A is a schematic side view from a first side of the gas injector of FIG. 5A, according to an embodiment of the present disclosure; FIG. 5A is a schematic side view from a second side of the injection ring of FIG. 5A, according to an embodiment of the present disclosure; FIG. FIG. 3 is a schematic isometric view of a gas injector according to another embodiment of the present disclosure; 6B is a schematic cross-sectional view of the gas injector of FIG. 6A taken along section line 6B-6B, according to an embodiment of the present disclosure; FIG. 6B is a schematic side view from a first side of the gas injector of FIG. 6A, according to an embodiment of the present disclosure; FIG. 6B is a schematic side view from a second side of the gas injector of FIG. 6A, according to an embodiment of the present disclosure; FIG. 1 is a schematic gas flow diagram of a mixed gas assembly according to an embodiment of the present disclosure; FIG. 7B is a schematic gas flow diagram of the mixed gas assembly of FIG. 7A and a second mixed gas assembly, according to an embodiment of the present disclosure; FIG. 7B is a flow diagram of a method for use with the mixed gas assembly of FIG. 7A, according to an embodiment of the present disclosure. FIG. 1 is a schematic plan view of a ring injector according to an embodiment of the present disclosure; FIG. FIG. 7 is a schematic plan view of a ring injector according to another embodiment of the present disclosure;

To facilitate understanding, where possible, the same reference numerals have been used to refer to identical elements common to several figures. It is contemplated that components and features of one embodiment may be beneficially incorporated into other embodiments without further description.

Embodiments of the present disclosure generally relate to apparatus for semiconductor processing. More specifically, the apparatus disclosed herein relates to processing chambers and components thereof. The processing chamber is configured as a thermal deposition chamber, such as an epitaxial deposition chamber. The processing chambers disclosed herein allow for improved process gas flow and substrate heating. Processing chambers have cheaper parts compared to traditional chambers, making it easier to replace parts of the processing chamber after parts of the chamber body wear out or when parts of the chamber body have an improved design. Reduce costs. The disclosed processing chamber overcomes conventional challenges, including improved process gas flow through the chamber space and more uniform thermal control, resulting in better throughput and increased process yield.

Also disclosed herein are processing chamber components. Components disclosed herein include an injection ring, a base ring, an upper lamp module, a lower lamp module, a susceptor, a rotating assembly, an upper liner, a lower liner, and one or more heating elements. Each of the processing chamber components are used together to flow one or more process gases horizontally across the surface of the substrate. The components of the processing chamber are coupled to each other and form a processing space in which a substrate is processed, for example by epitaxial deposition.

FIG. 1 is a schematic diagram of a processing chamber 100 according to an embodiment of the present disclosure. Processing chamber 100 is an epitaxial deposition chamber and can be used as part of a cluster tool (not shown). Processing chamber 100 is utilized to grow epitaxial films on a substrate, such as substrate 150. Processing chamber 100 generates a cross-flow of precursors across the top surface of substrate 150 during processing.

Processing chamber 100 includes an upper lamp module 102, a lower lamp module 104, a chamber body assembly 106, a susceptor assembly 124, a lower window 120, and an upper window 122. Susceptor assembly 124 is positioned between susceptor assembly 124 and lower lamp module 104. Lower window 120 is positioned between susceptor assembly 124 and lower lamp module 104. Upper window 122 is positioned between susceptor assembly 124 and upper lamp module 102 .

Upper lamp module 102 is disposed above susceptor assembly 124 and is configured to heat a substrate, such as substrate 150 disposed on susceptor assembly 124 . Upper lamp module 102 includes an upper module body 126 and a plurality of lamp openings 128 disposed through upper module body 126. A lamp 130 is disposed within each of the plurality of lamp openings 128. Each lamp 130 is coupled to a lamp base 129. Each lamp base 129 supports one of the lamps 130 and electrically connects each lamp 130 to a power source (not shown). Each lamp 129 extends and is fixed within the opening 128 in a generally vertical orientation. Here, the generally vertical orientation of lamp 130 is approximately perpendicular to the substrate support surface of susceptor 124. The vertical orientation of the lamp 130 is not necessarily perpendicular to the substrate support surface, but may be at an angle of about 30 degrees to about 150 degrees with respect to the substrate support surface 906 (FIG. 9), e.g., with respect to the substrate support surface 906. The angle may be between about 45 degrees and about 135 degrees, for example between about 70 degrees and about 110 degrees with respect to substrate support surface 906.

With continued reference to FIG. 1, upper lamp module 102 further includes a heated gas passage 136 and a pyrometer passage 138. A heated gas supply 132 is fluidly coupled to heated gas passageway 136. The heated gas passage 136 extends from the top surface of the upper module body 126 to the bottom surface. Heated gas passage 136 allows heated gas, such as heated air or heated inert gas, to flow from heated gas supply 132 to the top surface of upper window 122 to convectively heat upper window 122. It is configured to make it possible. The heated gas is supplied to an upper plenum 180 defined between the upper lamp module 102 and the upper window 122. A heated gas exhaust passage 142 is also disposed through the upper module body 126. Heated gas exhaust passage 142 is coupled to heated exhaust pump 140 . A heated exhaust pump 140 removes gas from the upper plenum 180. The heated exhaust pump 140 also functions as an exhaust pump for the processing space. The heated gas exhaust passage 142 may, in some embodiments, be a groove formed along the edge of the upper module body 126 or through a separate component in fluid communication with the upper plenum 180. It's fine.

A pyrometer passage 138 is disposed through the upper module body 126 to enable a pyrometer 134, such as a scanning pyrometer, to measure the temperature of the substrate 150. A pyrometer 134 is located on the upper module body 126 and adjacent a pyrometer passageway 138 . Pyrometer passage 138 extends from the top surface of upper module body 126 to the bottom surface adjacent upper window 122 .

Lower lamp module 104 is disposed below susceptor assembly 124 and is configured to heat the bottom surface of substrate 150 disposed on susceptor assembly 124 . Lower lamp module 104 includes a lower module body 182 and a plurality of lamp openings 186 disposed through lower module body 182. A lamp 188 is disposed within each of the plurality of lamp openings 186. Each lamp 188 is arranged in a generally vertical orientation and is coupled to lamp base 184. Each lamp base 184 supports one of the lamps 188 and electrically connects each lamp 188 to a power source (not shown). A generally perpendicular orientation of lamps 188 is described herein with respect to the substrate support surface of susceptor 124. A generally perpendicular orientation is not necessarily generally perpendicular to the substrate support surface, but at an angle of about 30 degrees to about 150 degrees relative to the substrate support surface, such as from about 45 degrees to about 135 degrees relative to the substrate support surface. for example, from about 70 degrees to about 110 degrees relative to the substrate support surface.

Lower lamp module 104 further includes a susceptor shaft passage 195 and a pyrometer passage 192. A support shaft 904 (FIG. 9) of susceptor 124 is disposed through susceptor shaft passage 195. Susceptor shaft passage 195 is disposed through the center of lower module body 182. Susceptor shaft passageway 195 is configured to allow support shaft 904 of susceptor 124 and a portion of lower window 120 to pass through lower module body 182 .

A pyrometer passage 192 is disposed through the lower module body 182 to enable a pyrometer 190, such as a scanning pyrometer, to measure the temperature of the bottom surface of the substrate 150 or the bottom surface of the substrate support. A pyrometer 190 is located below lower module body 182 and adjacent pyrometer passageway 192 . Pyrometer passage 192 is arranged from the bottom surface of lower module body 182 to the upper surface of lower module body 182 proximate lower window 120 .

With continued reference to FIG. 1, chamber body assembly 106 includes an injection ring 116 and a base ring 114. Injection ring 116 is positioned above base ring 114 . Injection ring 116 has one or more gas injectors 108 disposed therethrough. Base ring 114 includes a substrate transfer passage 162 disposed therethrough, one or more upper chamber exhaust passages 326 (FIG. 3C), and lower chamber exhaust passage 164. A substrate transfer passageway 162 is positioned opposite one or more upper chamber exhaust passageways 326 and lower chamber exhaust passageways 164. Each of the one or more upper chamber exhaust passages 326 is coupled to the exhaust module 165.

The upper chamber 111 is a portion of the processing space 110 where the substrate 150 is processed and a process gas is injected. Lower chamber 113 is the portion of processing space 110 into which substrate 150 is loaded onto susceptor assembly 124 . Upper chamber 111 may also be understood as the space above the susceptor of susceptor assembly 124 while susceptor assembly 124 is in the processing position. Lower chamber 113 is understood to be the space below the susceptor of susceptor assembly 124 while susceptor assembly 124 is in the processing position. A processing position (not shown) is a position where substrate 150 is placed on the same plane as horizontal plane 125 or above horizontal plane 125 . Horizontal plane 125 is the plane where injection ring 116 and base ring 114 contact each other.

One or more upper chamber exhaust passages 326 and lower chamber exhaust passages 164 are coupled to one or more exhaust pumps (not shown). One or more exhaust pumps are configured to remove exhaust gas from the processing space 110 via one or more upper chamber exhaust passages 326 and lower chamber exhaust passages 164. In some embodiments, each of upper chamber exhaust passage 326 and lower chamber exhaust passage 164 are coupled to a single exhaust pump using multiple conduits. In other embodiments, upper chamber exhaust passage 326 is coupled to a different exhaust pump than lower chamber exhaust passage 164.

A substrate transfer passageway 162 is formed through the base ring 114 and is configured to allow substrates to pass therethrough from a transfer chamber of a cluster tool (not shown). A flange 168 is attached to one end of base ring 114 to allow processing chamber 100 to be attached to a cluster tool (not shown). Substrate transfer passage 162 passes through flange 168.

Upper cooling ring 118 and lower cooling ring 112 are located on opposite sides of chamber body assembly 106. Upper cooling ring 118 is positioned above injection ring 116 and is configured to cool injection ring 116. Lower cooling ring 112 is disposed below base ring 114 and is configured to cool base ring 114. Upper cooling ring 118 has coolant passages 146 disposed therein. The coolant circulating through coolant passages 146 may include water or oil in some embodiments. Lower cooling ring 112 has coolant passages 148 disposed therein. The coolant circulating through coolant passages 148 is similar to the coolant circulating through coolant passages 146 of upper cooling ring 118 . In some embodiments, upper cooling ring 118 and lower cooling ring 112 help secure injection ring 116 and base ring 114 in place. Upper cooling ring 118 may partially support upper lamp module 102 and lower cooling ring 112 may partially support base ring 114 and injection ring 116.

The use of upper cooling ring 118 and lower cooling ring 112 reduces the temperature of injection ring 116 and base ring 114, while reducing the temperature of injection ring 116 and base ring 114 through injection ring 116 and base ring 114, as present in conventional rings. No additional cooling channels are required. This reduces manufacturing costs for injection ring 116 and base ring 114, which are replaced more frequently than upper cooling ring 118 and lower cooling ring 112. In some embodiments, injection ring 116 may have additional coolant passages 421 (FIG. 4A) disposed therein.

One or more gas injectors 108 of injection ring 116 are disposed through one or more openings within injection ring 116. In the embodiments described herein, a plurality of gas injectors 108 are disposed through the injection ring 116. One or more gas injectors 108 are configured to supply process gas to processing space 110 via one or more gas outlets 178. One of the one or more gas injectors 108 is shown in FIG. Gas injector 108 is shown positioned such that one or more gas outlets 178 point downwardly toward susceptor 124 and substrate 150. The downward angle of the gas injector 108 can be greater than about 5 degrees from horizontal, such as greater than about 10 degrees from horizontal. Each of the one or more gas outlets 178 is fluidly coupled to one or more process gas sources, such as a first process gas source 174 or a second process gas source 176. In some embodiments, only the first process gas source 174 is utilized. In embodiments where both a first process gas source 174 and a second process gas source 176 are utilized, there are two gas outlets 178 within each gas injector 108. The two gas outlets 178 are arranged in a superimposed manner, allowing mixing of the gases only after they have entered the processing space 110. In some embodiments, first process gas source 174 is a process gas and second process gas source 176 is a cleaning gas. In other embodiments, both the first process gas source 174 and the second process gas source 176 are process gases.

Upper window 122 is located between injection ring 116 and upper lamp module 102 . Upper window 122 is an optically transparent window that allows radiant energy produced by upper lamp module 102 to pass therethrough. In some embodiments, upper window 122 is formed of quartz or glass material. The upper window 122 is dome-shaped and is described as an upper dome in some embodiments. The outer edge of the upper window 122 forms a peripheral support 172. Peripheral support 172 is thicker than the central portion of upper window 122. Peripheral support 172 is positioned above injection ring 116 . Peripheral support 172 connects to the central portion of upper window 122 and is formed from an optically transparent material of the central portion of upper window 122 .

Lower window 120 is positioned between base ring 114 and lower lamp module 104. Lower window 120 is an optically transparent window that allows radiant energy produced by lower lamp module 104 to pass therethrough. In some embodiments, lower window 120 is formed of quartz or glass material. Lower window 120 is dome-shaped and is described as a lower dome in some embodiments. The outer edge of the lower window 120 forms a peripheral support 170. Peripheral support 170 is thicker than the central portion of lower window 120. A peripheral support 170 connects to the central portion of the lower window 120 and is formed of the same optically transparent material.

Various liners and heaters are disposed within the processing space 110 and inside the chamber body assembly 106. As shown in FIG. 1, an upper liner 156 and a lower liner 154 are disposed within the chamber body assembly 106. Upper liner 156 is positioned above lower liner 154 and inside injection ring 116 . Lower liner 154 is located inside base ring 114. Upper liner 156 and lower liner 154 are configured to be coupled together while within the processing space. Upper liner 156 and lower liner 154 are configured to shield the inner surfaces of injection ring 116 and base ring 114 from process gases within the processing space. Upper liner 156 and lower liner 154 further serve to reduce heat loss from the process space to injection ring 116 and base ring 114. Reduced heat loss improves heating uniformity of the substrate 150, allowing for more uniform deposition on the substrate 150 during processing.

Upper heater 158 and lower heater 152 are also located within processing space 110 within chamber body assembly 106 . As shown in FIG. 1, upper heater 158 is positioned between upper liner 156 and injection ring 116, and lower heater 152 is positioned between lower liner 154 and base ring 114. Both upper heater 158 and lower heater 152 are located inside chamber body assembly 106 to enable more uniform heating of substrate 150 while it is within processing chamber 100. Upper heater 158 and lower heater 152 reduce heat loss to the walls of chamber body assembly 106 and create a more uniform temperature distribution around the surfaces forming processing space 110. Each of upper liner 156 , lower liner 154 , upper heater 158 , and lower heater 152 is coupled to a flange 160 located within processing space 110 . Flange 160 is configured to be secured between a portion of injection ring 116 and base ring 114 to enable securing of each of upper liner 156, lower liner 154, upper heater 158, and lower heater 152. It is a horizontal surface. Both the upper heater 158 and the lower heater 152 can be configured to have the heated fluid passed therethrough, or can be resistance heaters. Upper heater 158 and lower heater 152 are further shaped to receive openings through injection ring 116 and base ring 114.

Susceptor assembly 124 is disposed within processing space 110 and is configured to support substrate 150 during processing. Susceptor assembly 124 includes a planar top surface for supporting substrate 150 and a shaft extending through a portion of lower window 120 and lower lamp module 104 . Susceptor assembly 124 is coupled to translation assembly 194. Movement assembly 194 includes a rotation assembly 196 and a lift assembly 198. Rotation assembly 196 is configured to rotate susceptor assembly 124 about central axis A, and lift assembly 198 is configured to move susceptor assembly 124 linearly within processing space 110 along central axis A. has been done.

FIG. 2A is a schematic cross-sectional perspective view of chamber body assembly 106, according to an embodiment of the present disclosure. Chamber body 106 includes an injection ring 116 disposed over and coupled to base ring 114 . Injection ring 116 includes one or more gas injectors 108. Injection ring 116 includes an inner surface 404 and base ring 114 includes an inner surface 304. The inner surface 304 of the base ring 114 and the inner surface 404 of the injection ring 116 are aligned with each other such that the inner surfaces 304, 404 have the same diameter about at least a portion of the outer circumferences of the base ring 114 and injection ring 116. The inner surface 304 of base ring 114 and the inner surface 404 of injection ring 116 form central opening 201 . Central opening 201 includes both base ring 114 opening 310 and injection ring 116 opening 410. The top surface 312 of the base ring is in contact with the bottom surface 324 of the injection ring 116.

One or more gas injectors 108 are located on one side of chamber body assembly 106 and one or more upper chamber exhaust passage openings 324 are located on an opposite side of chamber body assembly 106. Each of the one or more upper chamber exhaust passage openings 324 is aligned with a recess 430 formed in the inner surface of the injection ring 116. Aligning each of the one or more recesses 430 with the upper chamber exhaust passageway opening 324 allows gas injected by the one or more gas injectors 108 to flow across the processing space 110 (FIG. 1) toward the substrate. 150 and then removed from the processing space 110 via the upper chamber exhaust passageway opening 324. Recess 430 collects and assists in directing exhaust gas from an area flush with injection ring 116 and downwardly toward upper chamber exhaust passageway opening 324 . Once the exhaust gas enters the upper chamber exhaust passage opening 324 , the exhaust gas flows through one or more upper chamber exhaust passages 326 and exits through the exhaust outlet 330 .

The combination of recess 430 and upper chamber exhaust passage opening 324 reduces the complexity of manufacturing base ring 114 and/or injection ring 116. The combination of recess 430 and upper chamber exhaust passageway opening 324 further allows process gases to flow horizontally across process space 110 and remain within upper chamber 111 while eliminating potential sources of contamination from the lower chamber. There is no detour downward into 113.

FIG. 2B is a schematic cross-sectional view of the chamber body assembly 106 of FIG. 2A through another plane, according to an embodiment of the present disclosure. The cross-section shown in FIG. 2B illustrates the relationship between the lower chamber exhaust passage 164 and the orientation of the lower chamber exhaust passage 164 and at least one of the upper chamber exhaust passage opening 324, the recess 430, and the upper chamber exhaust passage 326. It shows the relationship between. Recess 430, upper chamber exhaust passageway opening 324, and upper chamber exhaust passageway 326 are at an angle relative to lower chamber exhaust passageway 164, as described with reference to FIGS. 4D, 4E, and 5B. It is located. Recess 430 and upper chamber exhaust passageway opening 324 are additionally positioned above lower chamber exhaust passageway 164 . Lower chamber exhaust passage 164 is configured to remove exhaust gas from lower chamber 113 and upper chamber exhaust passage opening 324 is configured to remove exhaust gas from upper chamber 111.

FIG. 3A is a schematic cross-sectional view of base ring 114. Base ring 114 includes a base ring body 302 with an opening 310 disposed through base ring body 302. The opening 310 forms at least a portion of the processing space 110 of the entire processing chamber 100. Opening 310 is sized to allow substrate and susceptor assembly 124 to be placed therein. Opening 310 is defined by inner wall 304 of base ring 114. Opening 310 extends from a top surface 312 of base ring 114 to a bottom surface 314 of base ring 114.

Base ring body 302 is the body of base ring 114 and is made of a metal material such as steel, aluminum, copper, nickel, or a metal alloy. In some embodiments, base ring body 302 can be a silicon carbide material or a doped silicon carbide material.

As mentioned above, a substrate transfer passageway 162 is positioned opposite one or more of the upper chamber exhaust passageway 324 and the lower chamber exhaust passageway 164. A substrate transfer passage 162 is disposed through the first side 306 of the base ring 114 , and one or more upper chamber exhaust passage openings 324 and lower chamber exhaust passage 164 are disposed through the first side 306 of the base ring 114 . It is formed through the side surface 308. A first side 306 of the base ring 114 is located on one side of a plane C (FIG. 3C) disposed through the base ring 114, and a second side 308 of the base ring 114 is located on one side of a plane C (FIG. 3C) disposed through the base ring 114. It is arranged on the opposite side of the plane C from the side surface 306. Plane C passes through central axis A and is perpendicular to plane B. Plane C separates substrate transfer passageway 162 from lower chamber exhaust passageway 164 and upper chamber exhaust passageway opening 324 . In the embodiments described herein, two upper chamber exhaust passage openings 324 are formed through the upper surface 312 of the base ring 114 (FIG. 3B). The two upper chamber exhaust passageway openings 324 are opposite the substrate transfer passageway 162, but are offset from directly across from the substrate transfer passageway 162. The two upper chamber exhaust passage openings 324 are staggered to prevent gas from collecting inwardly as it flows from the gas injector 108 (FIG. 1) across the processing space 110. Instead, the gas flow remains more evenly distributed across the processing space, allowing for more uniform deposition on the substrate 150. Two upper chamber exhaust passage openings 324 are located inboard of seal groove 316 .

Substrate transfer passageway 162 has a height H ₁ of about 7 mm to about 30 mm, such as about 10 mm to about 20 mm, to allow placement of substrate 150 and transfer arm (not shown) therethrough. Substrate transfer passageway 162 further has a width W ₁ (FIG. 3C) of about 305 mm to about 350 mm, such as about 305 mm to about 315 mm. Width W ₁ allows substrate 150 to be placed therethrough onto susceptor assembly 124 .

Still referring to FIG. 1, lower chamber exhaust passage 164 is positioned opposite substrate transfer passage 162 to place lower chamber exhaust passage 164 in fluid communication with an exhaust pump (not shown). The exhaust pump may also be coupled to and in fluid communication with the two upper chamber exhaust passage openings 324. Herein, the lower chamber exhaust passage 164 may be a cylindrical passage or an elliptical passage. It is a passageway of shapes. Lower chamber exhaust passage 164 has a height H ₂ of about 0 mm to about 75 mm, such as about 25 mm to about 50 mm. The height H ₂ of the lower chamber exhaust passage 164 is configured to allow suitable lower chamber gas flow therethrough with a possible lift arm assembly as shown in FIG. 10A.

Still referring to FIG. 4C, a sealing groove 316 is disposed in the top surface 312 of the base ring body 302. Seal groove 316 surrounds inner wall 304 and is configured to receive a sealing ring, such as an O-ring or other sealing gasket. The seal ring disposed within the seal groove 316 may be a polymer or plastic having a hardness greater than 50 durometers, such as greater than 60 durometers, such as greater than about 65 durometers, on the Shore A scale. Seal groove 316 is sized to receive a seal ring that forms a seal between base ring 114 and injection ring 116, as shown in FIG. Seal groove 316 is disposed radially outwardly of upper chamber exhaust passageway opening 324 to prevent exhaust gas flowing through upper chamber exhaust passageway opening 324 from escaping from processing chamber 100 .

Top surface 312 optionally includes a support step 340. Support step portion 340 is a recess formed between top surface 312 and inner wall 304. Support step portion 340 is configured to support flange 160 (FIG. 1). Flange 160 is configured to be disposed at least partially within support steps 340 of base ring 114 and injection ring 116 to hold flange 160 in place.

The bottom surface 314 of the base ring body 302 includes a first seal groove 318 and a second seal groove 320. The first seal groove 318 and the second seal groove 320 are concentric and surround the inner wall 304 along the bottom surface 314. The first seal groove 318 is arranged further outward from the axis A than the second seal groove 320 so that the first seal groove 318 surrounds the second seal groove 320. Each of first seal groove 318 and second seal groove 320 is configured to receive a seal ring, such as an O-ring or other sealing gasket. The seal rings disposed within the first seal groove 318 and within the second seal groove 320 are made of a polymer or plastic having a hardness greater than 50 durometer, such as greater than 60 durometer, such as greater than about 65 durometer, on the Shore A scale. It's possible. The first seal groove 318 and the second seal groove 320 are sized to receive a seal ring between the base ring 114 and the peripheral support 170 of the lower window 120 as shown in FIG. to form a seal.

FIG. 3B is a schematic plan view of the base ring 114 of FIG. 3A. As shown in FIG. 3B, the top surface 312 has one or more upper chamber exhaust passage openings 324 disposed therethrough. One or more upper chamber exhaust passage openings 324 are positioned between inner wall 304 and seal groove 316. One or more upper chamber exhaust passage openings 324 are in fluid communication with a portion of upper liner 156 and injection ring 116 for removing process gas from an upper portion of processing space 110. Each of the one or more upper chamber exhaust passage openings 324 is in fluid communication with the exhaust module 165 via an upper chamber exhaust passage 326 . Upper chamber exhaust passage 326 is a passage disposed through base ring body 302 (FIG. 3C). Upper chamber exhaust passage 326 fluidly couples one of exhaust modules 165 to one of upper chamber exhaust passage openings 324. As shown in FIG. 3B, two exhaust modules 165 are attached to the second side 308 of the base ring body 302. Each of the two exhaust modules 165 is positioned on either side of the lower chamber exhaust passage 164, such that each of the exhaust modules 165 is positioned on either side of plane B and is mirrored across plane B. . Plane B passes through central axis A, the center of substrate transfer passageway 162, and lower chamber exhaust passageway 164 (FIG. 3C). Plane B is a vertically oriented plane and divides base ring 114 in half so that base ring 114 is a mirror image with plane B in between. The same plane B is utilized with reference to the injection ring, as shown in FIG. 4B.

Each of the one or more upper chamber exhaust passage openings 324 has a width W ₂ from about 10 mm to about 220 mm, such as from about 20 mm to about 150 mm. The width W ₂ of each of the upper chamber exhaust passage openings 324 allows exhaust gases to be removed from within the processing space 110 while reducing turbulence of the gas flow within the processing space 110 .

Each of the upper chamber exhaust passage openings 324 is positioned with respect to plane B between a first exhaust angle α and a second exhaust angle β. The first exhaust angle α is an angle of about 5 degrees to about 45 degrees with respect to plane B, such as an angle of about 10 degrees to about 30 degrees with respect to plane B, such as about 10 degrees to about 10 degrees with respect to plane B. The angle is 25 degrees. The first exhaust angle α is large enough to prevent upper chamber exhaust passage 326 from intersecting lower chamber exhaust passage 164. The second exhaust angle β is an angle of about 30 degrees to about 70 degrees, such as an angle of about 35 degrees to about 65 degrees, such as an angle of about 45 degrees to about 60 degrees. The second exhaust angle β is large enough to capture gas directed across the opening 310 by the one or more gas injectors 108 such that the gas path is directed toward plane B. There is no substantial inward bending. The difference between the first exhaust angle α and the second exhaust angle β is about 25 degrees to about 60 degrees, such as about 30 degrees to about 50 degrees. The difference between the first exhaust angle α and the second exhaust angle β allows the upper chamber exhaust passage opening 324 to be placed around the desired circumference of the opening 310, such that the difference The upper chamber exhaust passageway opening 324 is the amount of base ring 114 that extends around it.

FIG. 3C is a schematic cross-sectional plan view of the base ring 114 of FIG. 3A taken along cutting line 3C-3C. As shown in FIG. 3C, each of the upper chamber exhaust passages 326 is fluidly coupled to an exhaust module passage 328 disposed through each of the exhaust modules 165. Exhaust module passage 328 is in fluid communication with upper chamber exhaust passage opening 324 via upper chamber exhaust passage 326 . The exhaust module passage 328 becomes narrower as the exhaust module passage 328 extends further from the base ring body 302, and finally the exhaust module passage 328 connects with the exhaust outlet 330. Exhaust outlet 330 is an opening formed through the wall of exhaust module passageway 328 and is configured to be coupled to an exhaust conduit (not shown) for removing exhaust gases from processing chamber 100. Similar to upper chamber exhaust passage opening 324, upper chamber exhaust passage 326 is positioned with respect to plane B between a first exhaust angle α and a second exhaust angle β.

FIG. 4A is a schematic cross-sectional view of injection ring 116, according to an embodiment of the present disclosure. Injection ring 116 seats on base ring 114 and is configured to supply process gas to processing space 110 . Infusion ring 116 is a separate component from base ring 114. Injection ring 116 is configured to inject gas across the surface of the substrate such that the main flow of gas through processing space 110 is horizontal. Separable injection ring 116 allows for easy replacement and maintenance of injection ring 116 without replacing or removing the entire chamber body assembly 106. This reduces replacement costs and allows new gas injection improvements to be more easily implemented in the processing chamber 100 with minimal impact on other chamber components.

Injection ring 116 includes an inner surface 404 and an outer surface 406. The inner surface 404 forms a ring around an opening 410 located within the injection ring 116. Opening 410 forms at least a portion of processing space 110 of processing chamber 100 . Injection ring 116 has one or more gas injectors 108 disposed therethrough. One or more gas injectors 108 extend from the injector support surface 414 through the injection ring body 402 to the inner surface 404. One or more gas injectors 108 described herein are disposed through one or more injector passageways 408. Each injector passageway 408 is sized to receive one of the one or more gas injectors 108, such as one of the gas injectors 108. Injector passageway 408 extends from injector support surface 414 to interior surface 404 . As injector passageway 408 moves from injector support surface 414 to interior surface 404, injector passageway 408 extends downwardly. Extending downwardly means that as the injector passageway 408 moves radially inward toward the inner surface 404, the injector passageway 408 is positioned away from the top surface 418 of the injection ring 116 and closer to the bottom surface 424 of the injection ring 116. is defined as

The inner surface 404 includes a groove 436 disposed around a majority of the outer circumference of the inner surface 404, the groove 436 being, for example, greater than 50% of the outer circumference of the inner surface 404, such as greater than 60% of the outer circumference of the inner surface 404; For example, they are arranged at a ratio greater than 70% of the outer circumference of the inner surface 404. Groove 436 is configured to receive a heating element, such as upper heating element 158. Groove 436 is shown in FIG. 4A as being formed as part of inner surface 404 and bottom surface 424 of injection ring 116. Groove 436 is shown in FIG. Two recesses 430 are also arranged on the inner surface 404. Two recesses 430 are arranged opposite the injector passage 408. Recess 430 is disposed within groove 436 and extends deeper into injection ring body 402 than groove 436 such that recess 430 extends further from axis A than groove 436. There is.

Injector support surface 414 is part of outer surface 406 of injection ring body 402, along with outer step surface 416. Injector support surface 414 is configured to hold one or more gas injectors 108 in place by providing a surface for securing a portion of one or more gas injectors 108. One or more gas outlets 178 are disposed through interior surface 404 and angled downwardly toward substrate 150 disposed within processing space 110 (FIG. 1).

A bottom surface 424 of injection ring 116 is configured to contact top surface 312 of base ring 114 . Bottom surface 424 is a planar surface extending between outer surface 406 and inner surface 404. Outer step surface 416 extends from the outermost portion of outer surface 406 to the lower distal end of injector support surface 414 . Injector support surface 406 extends from an outer step surface 416 that is spaced from bottom surface 424 . Injector support surface 414 is positioned at an angle relative to bottom surface 424 . The angle of the injector support surface 414 depends, at least in part, on the desired downward angle of the injector passageway 408 and one or more gas injectors 108. In embodiments described herein, the angle of injector support surface 414 with respect to bottom surface 424 is greater than about 45 degrees, such as from about 45 degrees to about 85 degrees, such as from about 60 degrees to about 80 degrees, such as from about 70 degrees to about It is 80 degrees. Injector support surface 414 extends radially inwardly from outer step surface 416 such that the distal end of injector support surface 414 furthest from outer step surface 416 is closer to inner surface 404 .

A top surface 418 of injection ring 116 extends radially inwardly from the upper distal end of injector support surface 414 . Top surface 418 is a horizontal surface such that top surface 418 extends parallel to bottom surface 424 . A distal end of upper surface 418 opposite injector support surface 414 connects to window support groove 412 . Window support groove 412 is a channel located along the top surface of injection ring 116. Window support groove 412 is configured to receive peripheral support 172 of upper window 122 therein. Window support groove 412 includes a first window seal groove 420 and a second window seal groove 422. Each of first sealing window groove 420 and second sealing window groove 422 is configured to receive a sealing ring, such as an O-ring or other sealing gasket. The seal rings disposed within the first window seal groove 420 and within the second window seal groove 422 may be made of a polymer having a hardness greater than 50 durometer, such as greater than 60 durometer, such as greater than about 65 durometer, on the Shore A scale. It can be plastic. The first window seal groove 420 and the second window seal groove 422 are sized to receive a seal ring and form a seal between the injection ring 116 and the upper window 122, as shown in FIG. make it possible to

The inner portion of the window support groove 412 is defined by an angled protrusion 411. The angled protrusion 411 is located more inwardly than the first window seal groove 420 and the second window seal groove 422 . Angled protrusion 411 extends upwardly from window support groove 412 and away from bottom surface 408 . The angled protrusion 411 has a portion of the window support groove 412 disposed on the innermost side of the angled protrusion 411 and a portion of the inner surface 404 disposed on the outermost side of the angled protrusion 411. form part and. Angled protrusion 411 extends upwardly from window support groove 412 and radially inwardly. Angled protrusion 411 shields a portion of upper window 122, such as peripheral support 172, from processing space 110 (FIG. 1). By shielding the peripheral support 172 from the processing space 110, the heating load on the peripheral support 172 and the seals in the first window seal groove 420 and the second window seal groove 422 is reduced. In addition, the angled protrusion 411 protects the seal ring disposed within the support groove 412 from direct exposure to radiant energy or process gases, thus reducing lift of the seal ring. ) and improve reliability.

A coolant passage 421 is optionally disposed through the injection ring body 402. Coolant passage 421 is configured to receive a cooling fluid, such as water or oil. Coolant passage 421 is a partial ring disposed through injection ring body 402 to assist in temperature control of both injection ring 116 and base ring 114.

FIG. 4B is a schematic top view of the injection ring 116 of FIG. 4A with multiple gas injectors 108. In FIG. 4B, five gas injectors 108 are shown. Other quantities of gas injectors 108 are also envisioned, such as three or more gas injectors 108, four or more gas injectors 108, five or more gas injectors 108, or six or more gas injectors 108. The number of gas injectors 108 determines the number of zones into which process gas is injected into the processing space 110 (FIG. 1). Each gas injector 108 has a gas outlet oriented toward a central portion of the inject ring 116, such as central axis A. Gas injector 108 is positioned on one side of injection ring 116 to allow cross flow across the substrate within processing chamber 100 . The gas injector group 108 is arranged with plane B as the center. Plane B is the same plane as plane B passing through base ring 114. Plane B is located through central axis A and is orthogonal to plane D. A plurality of individual process gas passageways (FIGS. 5A-6B) may be disposed within each gas injector 108. In embodiments where five gas injectors 108 are utilized, the middle gas injector 432a forms the inner gas injection zone, the two outermost gas injectors 432c form the outer gas injection zone, and the middle gas injector 432a and Two intermediate gas injectors 432b between the outermost gas injector 432c form an intermediate gas injection zone. Plane B is located through the central gas injector 432a. The two intermediate gas injectors 432b are mirror images with plane B in between. Similarly, the two outermost gas injectors 432c are mirror images with plane B in between. A gas injector 108 is disposed through each injector passageway 408. The number of injector passages 408 is equal to the number of injectors 108.

Each injector passage 408 has an injector passage width _W3 . The injector passage width W ₃ of each injector passage 408 is shown to be the same. In an alternative embodiment, the injector passage width W ₃ changes as the injector passage 408 extends outward, from the central gas injector 432a to the outermost gas injector 432c. In some embodiments, the injector passage width W ₃ of the injector passage 408 through which the outermost gas injector 432c extends is greater than the injector passage width W ₃ of the injector passage 408 through which the middle gas injector 432b extends. The injector passage 408 through which the intermediate gas injector 432b extends has an injector passage width _W3 that is greater than the injector passage width _W3 of the injector passage 408 through which the central gas injector 432a extends.

Alternatively, the injector passage width _W3 decreases as the injector passage 408 extends outward from the injector passage 408 in which the central gas injector 432a is located. In this embodiment, the injector passage width W ₃ of the injector passage 408 through which the outermost gas injector 432c extends is smaller than the injector passage width W ₃ of the injector passage 408 through which the intermediate gas injector 432b extends. The injector passage width W ₃ of the injector passage 408 through which the intermediate gas injector 432b extends is smaller than the injector passage width W ₃ of the injector passage 408 through which the central gas injector 432a extends.

Each of the injector passages 408 is arranged at an injector angle γ with respect to plane B. An injector angle γ is obtained relative to plane B, but on the opposite side of plane D for a first exhaust angle α and a second exhaust angle β. The injector angle γ is less than about 90 degrees from plane B, such as less than about 70 degrees, such as less than about 65 degrees from plane B, such as less than about 60 degrees from plane B. The injector angle γ is configured to be within 10 degrees of the second exhaust angle β such that the difference between the injector angle γ and the second exhaust angle β is between about -10 degrees and about 10 degrees. For example, from about -5 degrees to about 5 degrees, for example about 0 degrees. The injector angle γ and the second exhaust angle β are similar in that they reduce the deflection of the gas injected into the process space 110 by the gas injector 108 while the gas is being exhausted. Gas deflection can cause non-uniformity during film deposition.

Injection ring 116 includes a recess 430 within interior surface 404 opposite injector passageway 408 . Recess 430 corresponds to one or more upper chamber exhaust passage openings 324 (FIG. 3B). Recess 430 is disposed above one or more upper chamber exhaust passage openings 324 such that recess 430 is positioned above one or more upper chamber exhaust passages 326 of base ring 114 (FIG. 4A). It functions as the first part. In the embodiment described herein, there are two recesses 430 corresponding to the two upper chamber exhaust passages 326. Two recesses 430 are located on opposite sides of opening 410 from injector passage 408 . The two recesses 430 are located on one side of the plane D through the injection ring 116 and the injector passage 408 is located on the opposite side of the plane D. The two recesses 430 are offset from the center of the injection ring 116, opposite the injector passage 408 in which the central gas injector 432a is located. Neither recess 430 is located through plane B. The recess 430 is a mirror image with the plane B in between. As discussed above, staggering the two recesses 430 allows gas to collect inwardly as it flows from the gas injector 108 (FIG. 1) across the process space 110 to the upper chamber exhaust passageway 326. Prevented.

Herein, recess 430 is similarly sized and shaped as one or more upper chamber exhaust passage openings 324. Each of the recesses 430 has a width W ₄ of about 0 mm to about 220 mm, such as about 10 mm to about 150 mm. Width W ₄ corresponds to width W ₂ (FIG. 3B) of upper chamber exhaust passage opening 324. Width W ₄ is configured to reduce turbulence of the gas flow within the processing space 110 to allow a primarily laminar gas flow and uniform deposition onto the substrate 150. Similar to upper chamber exhaust passage opening 324, recess 430 is positioned between first exhaust angle α and second exhaust angle β with respect to plane B.

Injection ring body 402 forms injection ring 116 and is formed of a metallic material such as steel, aluminum, copper, nickel, or a metal alloy. In some embodiments, injection ring body 402 can be made from a silicon carbide material or a doped silicon carbide material.

FIG. 5A is a schematic isometric view of gas injector 108, according to one embodiment of the present disclosure. Gas injector 108 includes an injector base 502 and an injector insertion portion 500. Injector insert 500 is connected to injector base 502 and is configured to fit into one of injector passageways 408 (FIG. 4A). Injector base 502 rests on injector support surface 414 and is configured to secure injector insert 500 in position within one of the injector passageways 408 . The gas injector 108 defines a plurality of gas passageways within the injector 108 and provides a sheet of gas exiting from a gas outlet 178 located at the distal end of the injector insert 500 opposite the injector body 502. is configured to do so.

Both the injector insert 500 and the injector base 502 are made of materials that have low reactivity to process gases, high durability, and high thermal conductivity. Suitable materials for forming injector base 502 and injector insert 500 include silicon carbide, nickel, stainless steel, aluminum, and quartz.

Injector insert 500 extends from backside 506 of injector base 502 . Back surface 506 functions as a mounting surface for securing gas injector 108 to injector support surface 414. The back surface 506 is a planar surface disposed around the base 501 of the injector insertion section 500. Injector insert 500 has an outer surface 504 and an injection surface 510. Gas outlet 178 is disposed through injection surface 510 . Injection surface 510 is located at the distal end of injector insert 500 opposite base 501 and injector base 502 . The outer surface 504 of the injector insert 500 is configured to fit within one of the injector passageways 408. The cross section of the outer surface 504 and injection surface 510 of the injector insert 500 has a stadium shape or an obround shape. In some embodiments, the cross-sections of outer surface 504 and injection surface 510 are elliptical or quadrilateral, such as rectangular, parallelogram, or trapezoid. Other shapes of the outer surface 504 and injection surface 510 cross-sections are also contemplated and may be useful.

Gas outlet 178 of injector insert 500 is formed from outlet opening 508 . An outlet opening 508 is disposed through the outer surface 504 of the injector insert 500. Exit opening 508 is shaped to distribute gas driven through exit opening 508 to form a directed expanse of gas across the top surface of substrate 150 .

FIG. 5B is a schematic cross-sectional view of the gas injector 108 of FIG. 5A taken along section line 5B-5B, according to an embodiment of the present disclosure. Injector base 502 includes a front surface 512. Front side 512 is the side of injector base 502 opposite from back side 506. Front surface 512 is configured to receive one or more gas connections and one or more electrical connections. The one or more gas connections can be either a first process gas source 174 and/or a second process gas source 176. One or more electrical connections are not shown but may be configured to power a heater located within gas injector 108.

A gas introduction passage 514 is disposed through the front surface 512. Gas introduction passage 514 is a single gas passage configured to transfer process gas from a gas line connected to front face 512 to a diffusion passage 516 located within injector insert 500 . Diffusion passage 516 divides the gas flow from gas introduction passage 514 into multiple gas streams. Diffusion of gas into multiple gas streams can be gradual or sudden, and in some embodiments, a single gas introduction passageway 514 is divided into three or more passageways at the same time, and other In embodiments, a single gas introduction passageway 514 is divided into two gas passageways, the two gas passageways are divided into four gas passageways, and the four gas passageways are divided into eight gas passageways (FIG. 5C). ).

Diffusion passage 516 is thus a gas distribution network or tree of gas passages. As shown in FIG. 5C, the gradual separation of the gas in the diffusion passages 516 allows the pressure of the gas in each gas passage to be equalized across the flow direction, thus providing a plurality of individual passages 552a to 552a. The uniformity of gas distribution within the diffusion passage 516 over h (FIG. 5C) is improved. Various configurations of diffusion passages 516 are utilized to alter the gas distribution across each path 552a-h. In the example shown in FIG. 5C, the diffusion passage 516 includes a first branch 540 that extends from the gas introduction passage to the two arms of the diffusion passage 516. After the diffusion passageway 516 splits into two arms at the first branch 540, each of the two arms further splits into two arms at the two second branches 542a, 542b. After splitting at the two second branches 542a, 542b, there are a total of four arms extending towards the outlet opening 508. Each of the four arms then further splits into two arms at four third branches 550a, 550b, 550c, 550d. After splitting at the four third branches 550a, 550b, 550c, 550d, there are a total of eight arms extending toward the outlet opening 508. In some embodiments, each of the first branch 540, the second branch 542a, 542b, or the third branch 550a, 550b, 550c, 550d, alternatively, instead of two additional arms, It may be divided into three or four additional arms. In yet other embodiments, one of the second branches 542a, 542b or the third branches 550a, 550b, 550c, 550d is unavailable and there are two sets of branches or only one set of branches.

The individual paths 552a-h may be configured to provide greater gas flow through some paths 552a-h relative to other paths 552a-h. The size of the injector insert 500 and the number of individual gas paths 552a-h are also tailored for different configurations of the injector insert 500 and different processes. There are 4 to 16 channels formed by the diffusion channels 516, such as 4 to 12 channels, such as 6 to 10 channels, such as 8 channels. The cross-sectional size of each passageway 552a-h within the diffusion passageway 516 is selected according to the desired flow rate, flow rate, flow pressure, and/or type of gas desired for a given process.

The use of gas injector 108 is advantageous in that new injection passage designs can be tested quickly and inexpensively within the processing chamber with little downtime and significantly reduced production costs. New injection path designs may be tested by replacing one or more gas injectors 108 while disassembling or replacing other components within processing chamber 100, such as injection ring 116 or base ring 114. Never. Gas injector 108 therefore allows for rapid adaptation of new diffusion passage 516 and injector insert 500 designs. Various gas injectors 108 may also be utilized to distribute process gases to various portions of the substrate 150. The overall length of the gas injector can be about 75 mm to about 150 mm, such as about 80 mm to about 120 mm, such as about 100 mm. Different lengths of the gas injector 108 may be utilized for different reasons, such as biased gas delivery to the edges of the substrate versus gas delivery to the center of the substrate.

Each path 552a-h of diffusion passageway 516 communicates with first plenum 518. First plenum 518 is a space located at the distal end of diffusion passageway 516, opposite from introduction passageway 514. First plenum 518 is a single space at the distal end of each passage 552a-h of diffusion passageway 516. The first plenum 518 allows at least partially equalization of pressure and flow rate between each gas stream traveling through one of the individual paths 552a-h. Equalizing the pressure within the first plenum 518 allows the flow rate between each path 551a-h to be at least partially uniform, as back pressure is created within the first plenum 518. , the gases in the gas stream are mixed. The first plenum 518 is configured to partially equalize the pressure between each of the individual passageways 552a-h. The amount of diffusion of the gas flow within the first plenum 518 is determined by the length L of the first plenum 518 between the distal end of the diffusion passageway 516 and the distal end of the fin array 520 closest to the diffusion passageway 516. ₁ . The first plenum 518 has a length L ₁ from about 3 mm to about 12 mm, such as from about 3 mm to about 10 mm.

Fin array 520 includes a plurality of fins 521 disposed between bottom surface 503 and top surface 505 of injector insert 500 . The plurality of fins 521 are distributed to form a plurality of path extensions 534. The path extension portion 534 is formed between the inner wall of the injector insertion portion 500 and one of the fins 521 or between two adjacent fins 521. In embodiments described herein, there are between 3 and 14 fins 521, such as between 4 and 12 fins 521, such as between 6 and 8 fins 521. The fins form path extensions 534 such that there are between 4 and 16 path extensions 534, such as between 6 and 12 path extensions 534, such as 8 path extensions 534. In embodiments described herein, there are as many path extensions 534 as paths 552a-h, so that gas flow is uninterrupted and continues after passing through the first plenum 518. Each fin 521 in fin array 520 is individually oriented in a different direction. In the example shown in FIG. 5C, the fins 521 are arranged in a fan shape and oriented at increasing angles from the centerline E of the injection ring 116. Each fin 521 located further away from centerline E is oriented at a greater angle to centerline E (FIG. 5C). The fins on centerline E are linearly aligned with centerline E.

Fin array 520 is arranged over length L ₂ of injector insert 500 . The length L ₂ of the fin array 520 helps in determining the flow vector and dispersion of each gas stream. The longer the length _L2 , the slower the gas flow and the more backpressure within the first plenum 518. The reduced length _L2 does not allow for adequate backpressure build-up or gas mixing. The length L ₂ of the fin array 520 is about 15 mm to about 50 mm, such as about 20 mm to about 40 mm. In some embodiments, length L ₂ is about 25% to about 50% of the overall width W ₅ of injector insert 500.

Immediately downstream of fin array 520 is a second plenum 522 . The second plenum 522 is a space located at the distal end of the fin array 520, opposite the first plenum 520. The second plenum 522 is a single space at the distal end of each path extension 534 of the fin array 520. The second plenum 522 allows at least partially equalization of pressure and flow rate between each gas stream traveling through one of the individual path extensions 534. Equalizing the pressure within the second plenum 522 allows the flow rate between each path extension 534 to be at least partially equalized. Back pressure is created within the second plenum 522 to mix the gases in the gas stream. The second plenum 522 is configured to partially equalize the pressure between each of the path extensions 534. The amount of gas flow diffusion and backpressure build-up within the second plenum 522 is determined by the amount of gas flow spread between the distal end of the fin array 520 and the distal end of the baffle array 524 closest to the second plenum 522. 2 is controlled in part by the length _L3 of the plenum 522. The second plenum 522 has a length L ₃ from about 3 mm to about 12 mm, such as from about 3 mm to about 10 mm.

Baffle array 524 is formed from a plurality of baffles 535 (FIG. 5C). Baffles 535 of baffle array 524 define a plurality of passage outlets 536. Path outlet 535 is an additional extension of each path 552a-h and path extension 534. Pathway exit 535 is a narrow path near second plenum 522 and widens as pathway exit 535 moves away from second plenum 522 and toward third plenum 526 . The plurality of baffles 535 are shaped such that the width of the surface near the second plenum 522 is wider in the direction of gas flow than the surface near the third plenum 526. In some embodiments, each baffle 535 has a trapezoidal shape, such as an isosceles trapezoid. Other shapes for baffle 535 are also envisioned. In embodiments described herein, there are between 3 and 14 baffles 535 within the baffle array 524, such as between 4 and 12 baffles, such as between 5 and 10 baffles, such as between 6 and 8 baffles.

The shape and orientation of each baffle 535 assists in equalizing the pressure between each of the gas streams passing through the second plenum 522 by creating a backpressure within the second plenum 522 . The backpressure within the second plenum 522 slows the gas flow past the injector insert 500 and helps create a uniform gas flow through the path outlet 536. The increased width of each path outlet 536 facilitates the expansion of each gas flow filling the third plenum 536. Thus, baffle array 524 helps form a curtain of process gas that is disposed across the width of third plenum 526. The process gas curtain is configured to be a substantially uniform curtain with the same process gas flow rate and concentration across the width of the third plenum 526.

Baffle array 524 is arranged over length L ₄ of injector insert 500 . The length L ₄ of the baffle array 524 helps determine the rate of gas flow expansion, backpressure within the second plenum 522, and rate of gas mixing. Length L ₄ of baffle array 524 is about 25% to about 50% of length L ₂ of fin array 520, such as about 30% to about 40% of length L ₂ , such as about 30% of length L ₂ ~35%.

A third plenum 526 is positioned between baffle array 524 and outlet opening 508. Third plenum 526 is an open area formed within the wall of injector insert 500. The third plenum 526 is configured to allow the gas streams exiting the baffle array 524 to mix and join into a continuous expanse of process gas. The sheet of process gas is then discharged through outlet opening 508 into processing space 110 .

FIG. 5C is a schematic cross-sectional plan view of the gas injector 108 of FIG. 5A taken along section line 5C-5C, according to an embodiment of the present disclosure. FIG. 5C more clearly shows the dispensing system 515 via the injector insert 500 described above. Distribution system 515 includes a gas introduction passageway 514, a diffusion passageway, a first plenum 518, a fin array 520, a second plenum 522, a baffle array 524, a third plenum 536, and passageways formed therefrom.

One or more heating elements 530 are located on either side of the injector insert 500. A heating element 530 is disposed through at least a portion of the injector insert 500 and around the diffusion passageway 516. The heating element 530 described herein is inserted into the injector insert 500 through one or more openings 528 disposed through the front surface 512 of the injector base 502. Heating element 530 can be either a resistive heating element or a radiant heating element. The heating element 530 shown in FIG. 5C is a cartridge heater and is located within a heater cavity 531. In the embodiment of FIGS. 5A-5C, there are two heater cavities 531, with one heating element 530 disposed within each heater cavity 531.

A heating element 530 located within each gas injector 108 allows preheating of the mixed or process gas entering the processing space 110 (FIG. 1). Gas injector 108, which is heated separately from other components of processing chamber 100, such as injection ring 116 and base body 114, allows for more controlled heating of the gas flowing past gas injector 108. The gas may be heated to the desired process temperature immediately prior to entering the processing space using heating elements 530 as described herein. Heating the gas injector 108 is generally utilized when flowing stable or non-reactive precursors, such as dichlorosilane or trichlorosilane, through the gas injector 108. The heating element 530 heats the gas injector 108 and the gas flowing through the gas injector 108 to a temperature of less than about 400°C, such as from about 100°C to about 400°C, such as from about 150°C to about 300°C, such as about 200°C. It is configured to heat to a temperature of ~300°C. Heating each gas injector 108 individually further allows for control of the process gas flowing through each individual gas injector 108 such that the process gas flowing through one or more gas injectors 108 The process gas flowing through the other gas injectors 108 is heated to a different temperature. The heating element 530 allows the gas to be preheated before flowing over the substrate without being consumed unfinished.

FIG. 5D is a schematic side view from a first side of the gas injector 108 of FIG. 5A, according to an embodiment of the present disclosure. Gas injector 108 is shown facing front side 512 of injector base 502 . Disposed through the front surface 512 are a gas introduction passage 514, one or more openings 528 for a heating element 530, and one or more mounting fasteners 507. The gas introduction passage 514 is arranged between the openings 528 such that the gas introduction passage 514 is centrally located between the openings 528. Two openings 528 are shown, with a heating element 530 disposed within each opening 528. Each opening 528 and gas introduction passage 514 are arranged inside the outer surface 504 of the injector insertion section 500.

One or more attachment fasteners 507 are used to attach gas injector 108 to injection ring 116 and hold gas injector 108 in place. One or more attachment fasteners 507 may include hooks, fasteners, securing pins, latches, screws, or bolts. Other types of fasteners are also envisioned. One or more attachment fasteners 507 are disposed through the injector base 502. One or more attachment fasteners 507 are disposed through at least the front surface 512. The one or more attachment fasteners 507 shown herein are two attachment fasteners 507. Two mounting fasteners 507 are located on either side of the injector base 502 and on either side of the gas introduction passage 514. Two mounting fasteners 507 are located outside an opening 528 located through the injector base 502.

In some embodiments, heating elements 530 or attachment fasteners 507 are additionally utilized. An opening 528 located through the front surface 512 allows the heating elements 530 to be individually connected to a power source (not shown). Gas introduction passageway 514 allows a gas source, such as first process gas source 174 or second process gas source 176, to be fluidly coupled to diffusion passageway 516 to supply process gas.

FIG. 5E is a schematic side view from a second side of the gas injector 108 of FIG. 5A, according to an embodiment of the present disclosure. Gas injector 108 is shown facing injection face 510 of injector insert 500. As shown, an outlet opening 508 is located within the injection surface 510. One or more attachment fasteners 507 are further disposed through the injector base 502.

The height H ₃ of the injection surface 510, and thus the height of the injector insert 500, is about 5 mm to about 12 mm, such as about 6 mm to about 11 mm, such as about 7 mm to about 10 mm. The height H ₃ is similar to the height of the injector passage 408 and allows the injector insert 500 to be inserted into the injector passage 408 . The width W ₅ of the injection surface 510, and thus the width of the injector insert 500, is about 50 mm to about 100 mm, such as about 60 mm to about 90 mm, such as about 70 mm to about 90 mm. The width W ₅ is similar to the width of the injector passage 408 and allows the injector insert 500 to be inserted into the injector passage 408 . Width W ₅ further determines the number of gas injectors 108 utilized within processing chamber 100 . The ratio of height H ₃ to width W ₅ of injection surface 500 is about 1:15 to about 1:5, such as about 1:12 to about 1:8, such as about 1:10. The ratio of height H ₃ to width W ₅ helps create a uniform spread of gas exiting the injector insert 500.

The outlet opening 508 of the gas injector 108 includes a width W ₆ of about 50 mm to about 100 mm, such as about 70 mm to about 90 mm. The width W ₆ of the outlet opening 508 is configured to control the distribution of gas from a single gas injector 108 . The width W ₆ may be wider when fewer gas injectors 108 are used and narrower when more gas injectors 108 are used. The height H ₄ of the outlet opening 508 is about 2 mm to about 8 mm, such as about 3 mm to about 7 mm, such as about 3 mm to about 6 mm. The height H ₄ of the outlet opening 508 is equal to the height of the rest of the distribution system 515. In some embodiments, the height H ₄ varies throughout the distribution system 515.

FIG. 6A is a schematic isometric view of another embodiment of a gas injector 108 according to a second embodiment of the present disclosure. The gas injector 108 of FIGS. 6A-6B is similar to the gas injector 108, but the injector insert 500 is replaced with a multilayer injector insert 600. Multilayer injector insert 600 is similar to injector insert 500 of FIGS. 5A-5C, but has two layers of gas flow, with a first sheet of gas flow: It is located below a second sheet of gas flow. Injector insert 600 includes two distribution systems 515 such that a first distribution system 515 is superimposed on a second distribution system 515 as described herein.

Gas injector 108 of FIGS. 6A-6B includes an injector base 502 and a multilayer injector insert 600. Gas injector 108 of FIGS. Multilayer injector insert 600 is connected to injector base 502 and is configured to fit into one of injector passageways 408 (FIG. 4A) in a manner similar to injector insert 500 of FIGS. 5A-5C. ing. Each gas injector 108 with an injector insert 600 includes a first outlet opening 608a and a second outlet opening 608b within the gas outlet 178, thereby providing a multilayer injector insert opposite the injector body 502. There are two separate gas outlets located at the distal end of section 600. Each of the first outlet opening 608a and the second outlet opening 608b receives a separate process gas from a separate process gas supply, such as a first process gas supply 174 and a second process gas supply 176. is supplied.

Both the multilayer injector insert 600 and the injector base 502 are formed from materials that have low reactivity to process gases, high durability, and high thermal conductivity. Suitable materials for forming injector substrate 502 and multilayer injector insert 600 include silicon carbide, nickel, stainless steel, aluminum, and quartz.

A multilayer injector insert 600 extends from the backside 506 of the injector base 502. Multilayer injector insert 600 has an outer surface 604 and an injection surface 610. Gas outlet 178 is disposed through injection surface 610 . Injection surface 610 is located at the distal end of multilayer injector insert 600 opposite base 601 and injector base 502 of multilayer injector insert 600 . The outer surface 604 of the multilayer injector insert 600 is configured to fit within one of the injector passageways 408. The cross section of the outer surface 604 and injection surface 610 of the multilayer injector insert 600 has a stadium shape or an obround shape. In some embodiments, the cross-sections of outer surface 604 and injection surface 610 are elliptical or quadrilateral, such as rectangular, parallelogram, or trapezoid. Other shapes of the outer surface 604 and injection surface 610 cross-sections are also contemplated and may be useful. The multilayer injector insert 600 includes an outer surface 604 including a top surface 605 and a bottom surface 603 . Top surface 605 and bottom surface 603 are similar to top surface 505 and bottom surface 503.

Gas outlet 178 of injector insert 600 includes a first outlet opening 608a and a second outlet opening 608b. A first outlet opening 608a and a second outlet opening 608b are disposed through the outer surface 604 of the multilayer injector insert 600. Each of the first and second outlet openings 608a and 608b distributes the gas driven through the first and second outlet openings 608a and 608b to the surface of the substrate. It is shaped so as to form two sheets of gas across the gas. In the embodiment of FIGS. 6A-6B, the first outlet opening 608a is located below the second outlet opening 608b. The first outlet opening 608a is arranged parallel to the second outlet opening 608b. Each of the first outlet opening 608a and the second outlet opening 608b is configured to provide a separate gas curtain or spread.

Each separate gas sheet is discharged parallel to each other and mixes only after entering the processing space 110 (FIG. 1). The paths of each gas sheet are separated while flowing through the injector insert 600. In some embodiments, one or both of the first outlet aperture 608a and the second outlet aperture 608b directs gas exiting the first outlet aperture 608a or the second outlet aperture 608b in opposite directions. The outlet openings 608a, 608b are arranged to direct the exiting gas flow. This can improve gas mixing between the two curtains of process gas exiting the outlet openings 608a, 608b.

FIG. 6B is a schematic cross-sectional view of the gas injector 108 of FIG. 6A through another plane, according to an embodiment of the present disclosure. In the embodiments described herein, there is a first gas introduction passage 614a and a second gas introduction passage 614b. The one or more gas connections coupled to the first gas introduction passageway 614a and the second gas introduction passageway 614b can be either the first process gas source 174 or the second process gas source 176. . In some embodiments, the first gas introduction passage 614a is coupled to the first process gas supply 174 and the second gas introduction passage 614b is coupled to the second process gas supply 176. . Both the first gas introduction passage 614a and the second gas introduction passage 614b are similar to the gas introduction passage 514 of FIGS. 5B and 5C.

Each of the first gas introduction passage 614a and the second gas introduction passage 614b is a separate and separate gas passage. The first gas introduction passage 614a is a single gas passage and transports process gas from a gas line connected to the front face 512. The second gas introduction passageway 614b is similar to the first gas introduction passageway 614a and is a single gas passageway that transports a second process gas from a second line connected to the front surface 512. The first gas introduction passageway 614a is configured to be in fluid communication with the first diffusion passageway 616a. The second gas introduction passageway 614b is in fluid communication with a second diffusion passageway 616b located within the multilayer injector insert 600. Both first diffusion passage 616a and second diffusion passage 616b are similar to diffusion passage 516 of FIG. 5C. The first diffusion passage 616a and the second diffusion passage 616b can have different patterns in some embodiments such that the pattern of the first diffusion passage 616a is different from that of the second diffusion passage 616b. The pattern is different from that of The first diffusion passage 616a is arranged below the second diffusion passage 616b.

There are 4 to 16 paths formed by each of the first diffusion path 616a and the second diffusion path 616b, for example 4 to 12 paths, for example 6 to 10 paths, for example 8 paths. exists.

Each path of first diffusion passages 616a communicates with a first lower plenum 618a. Each path of second diffusion passages 616b communicates with first upper plenum 618b. A first lower plenum 618a and a first lower plenum 618b are two separate spaces located at the distal ends of the first diffusion passageway 616a and the second diffusion passageway 616b, respectively. The first lower plenum 618a and the first upper plenum 618b are similar to the first plenum 518 of FIGS. 5B and 5C. A lower fin array 620a is disposed at the distal end of the first lower plenum 618a opposite the first lower plenum 618a from the first diffusion passageway 616a. Upper fin array 620b is located at the distal end of first upper plenum 618b. Each of lower fin array 620a and upper fin array 620b is similar to fin array 520 of FIGS. 5B and 5C, and each includes a plurality of fins.

Immediately downstream of the lower fin array 620a is a second lower plenum 622a. Immediately downstream of the upper fin array 620b is a second upper plenum 622b. Second lower plenum 622a and second upper plenum 622b are spaces located at the distal ends of lower fin array 620a and upper fin array 620b, respectively. The second lower plenum 622a and the second upper plenum 622b are similar to the second plenum 522 of FIGS. 5B and 5C.

Lower baffle array 624a and upper baffle array 624b are formed from a plurality of baffles similar to baffle 535 of FIG. 5C. Lower baffle array 624a is located at the distal end of second lower plenum 622a furthest from lower fin array 620a. Upper baffle array 624b is located at the distal end of second upper plenum 622b furthest from lower fin array 620b. A third lower plenum 626a and a third upper plenum 626b extend from the lower baffle array 624a and the upper baffle array 624b, respectively. Third lower plenum 626a is a space extending between lower baffle array 624a and first outlet opening 608a. Third upper plenum 626b is a space extending between upper baffle array 624b and second outlet opening 608b. Each of third lower plenum 626a and third upper plenum 626b is similar to third plenum 526.

Although not shown in FIGS. 6A and 6B, multilayer injector insert 600 further includes one or more heating elements similar to heating element 530 of FIG. 5C. The pattern and distribution of passages, plenums, fins, and baffles within multilayer injector insert 600 are similar to those described above with respect to the embodiment of FIGS. 5A-5C. There may be more than two layers within multilayer injector insert 600, space permitting. In some embodiments, there are three layers for injecting three separate sheets of gas into the processing space 110, or four layers for injecting four separate sheets of gas into the processing space 110.

FIG. 6C is a schematic side view from a first side of the gas injector 108 of FIG. 6A, according to an embodiment of the present disclosure. Gas injector 108 is shown facing front side 512 of injector base 502 . Similar to that described above with reference to FIG. 5D, gas injector 108 includes one or more openings 528 for heating elements 530 and one or more attachment fasteners 507. Gas introduction passage 514 has been replaced by first gas introduction passage 614a and second gas introduction passage 614b. The second gas introduction passage 614b is arranged above the first gas introduction passage 614a. Both the first gas introduction passage 614a and the second gas introduction passage 614b are disposed between the openings 528 and between the heating elements 530. The first gas introduction passage 614a and the second gas introduction passage 614b exist inside the outer surface 604 of the multilayer injector insertion portion 600. The height of multi-layer injector insert 600 can be adjusted to compensate for additional layers of gas passages, or each gas passage can be narrowed.

FIG. 6D is a schematic side view from a second side of the gas injector of FIG. 6A, according to an embodiment of the present disclosure. Gas injector 108 is shown facing injection face 610 of multilayer injector insert 600. As shown, first outlet opening 608a and second outlet opening 608b are located within injection surface 610.

The height H ₅ of the injection surface 610 and thus the height of the injector insert 600 is between about 5 mm and about 15 mm, such as between about 6 mm and about 12 mm, such as between about 8 mm and about 12 mm. The height H ₅ is similar to the height of the injector passage 408 and allows the injector insert 600 to be inserted into the injector passage 408 . The width W ₅ of the injection surface 610 is similar to the width W ₅ of the injection surface 510 . The width W ₅ is similar to the width of the injector passage 408 and allows the injector insert 600 to be inserted into the injector passage 408 . The ratio of the height H ₅ to the width W ₅ of the injection surface 600 is about 1:7 to about 1:20, for example about 1:8 to about 1:16, for example about 1:10 to about 1:15. It is. The ratio of height H ₅ to width W ₅ helps create a uniform spread of gas exiting the injector insert 600.

The width W ₆ of each of the first outlet opening 608a and the second outlet opening 608b is similar to the width W ₆ of the outlet opening 508. Each of the first outlet opening 608a and the second outlet opening 608b further includes a height _H6 . The height H ₆ is about 2 mm to about 8 mm, such as about 3 mm to about 7 mm, such as about 3 mm to about 6 mm. The height H ₆ of the outlet openings 608a, 608b is equal to the height of the remainder of each distribution system 515. In some embodiments, the height H ₆ varies throughout the distribution system 515.

FIG. 7A is a schematic gas flow diagram of a gas supply assembly 700, according to an embodiment of the present disclosure. Gas supply assembly 700 can be used in place of or in conjunction with one of first process gas source 174 and second process gas source 176. One or more gas supply assemblies 700 are configured to supply process gases to processing space 110 via one or more gas injectors 108. Gas supply assembly 700 assists in controlling the partial pressure and flow rate of precursors from process gas supply 702 to processing space 110 . Controlling the partial pressure of the gas from the process gas supply 702 allows the concentration of process gas flowing into various regions of the processing space 110 to be controlled. Gas supply assembly 700 allows the flow rates and partial pressures (ie, concentrations) of process gases and precursors flowing through the various arms of gas supply assembly 700 to be separately controlled. A user may configure different arms or conduits of gas supply assembly 700 to supply the same flow rate of a particular process gas at different partial pressures/concentrations.

The gas supply assembly 700 includes a process gas supply 702 fluidly coupled to a pressure controller 704 , a gas reservoir 706 fluidly coupled to the pressure controller 704 , and a gas reservoir 706 and an evacuation pump 734 . and an exhaust induction valve 708 disposed between the gas reservoir 706 and the exhaust pump 734. A plurality of splitter valves 726a-726f are fluidly connected to gas reservoir 706 and processing space 110. A plurality of splitter valves 726a-726f are coupled in parallel to gas reservoir 706. Each splitter valve 726a-726f of the plurality of splitter valves 726a-726f is connected to a valve controller 724a-724f. Valve controllers 724a-724f control the volumetric flow rate from gas reservoir 706 through each splitter valve 726a-726f.

A carrier gas source 728 is fluidly coupled to the plurality of mixing points 732. A plurality of mixing points 732 are disposed between the carrier gas source 728 and the processing space 110 and between the plurality of splitter valves 726a-726f and the processing space 110. Gas from splitter valves 726a-726f and gas from carrier gas source 728 are combined at mixing point 732 before being supplied to gas injector 108.

Process gas supply 702 can be a gas panel or a single process gas supply 702. Process gas supply 702 is configured to supply process gases such as silicon-containing gases, germanium-containing gases, nitrogen-containing gases, carbon-containing gases, and oxygen-containing gases. Other types of process gases are also contemplated. Process gas supply 702 is configured to supply a process gas at a predetermined concentration and flow rate such that the mass flow rate of components in the process gas is controlled by process gas supply 702 . Process gas supply 702 is fluidly coupled to pressure controller 704 via process gas conduit 714 . Pressure controller 704 is configured to control the pressure of gas stored within gas reservoir 706 . Pressure controller 704 controls the pressure within gas reservoir 706. Pressure controller 704 controls the flow of process gas through pressure controller 704 and exhaust diversion valve 708 to account for gas leaving gas reservoir 706 and entering processing space 110 .

Pressure controller 704 is fluidly coupled to gas reservoir 706 by reservoir supply conduit 716. Reservoir supply conduit 716 transfers gas between pressure controller 704 and gas reservoir 706. Gas reservoir 706 is a pressurized gas reservoir. Gas reservoir 706 is maintained at a pressure of about 10 psi to about 65 psi, such as about 10 psi to about 60 psi, such as about 14 psi to about 50 psi. Gas reservoir 706 is configured to maintain a constant pressure. The constant pressure helps in controlling the pulsation of process gas through the splitter valves 726a-726f. Gas reservoir 706 is a chamber or tank configured to hold greater than about 100 cm ³ of process gas during substrate processing steps. Gas reservoir 706 has a space of about 100 cm ³ to about 750 cm ³ , such as about 100 cm ³ to about 500 cm ₃ . Gas reservoir 706 is large enough to allow uniform mixing of the gases introduced by process gas supply 702. Gas reservoir 706 can be configured to have a flow rate of about 100 sccm to about 500 sccm continuously passed therethrough.

If the pressure within gas reservoir 706 exceeds a predetermined limit, pressure controller 704 communicates with exhaust diversion valve 708 via exhaust valve controller 712 . Exhaust valve controller 712 is coupled to exhaust diversion valve 708 and opens and closes exhaust diversion valve 708 to increase or decrease the flow of process gas from gas reservoir 706 to exhaust pump 734 . Exhaust pump 734 is coupled to exhaust diversion valve 708 via exhaust conduit 720 . Exhaust conduit 720 also fluidly couples exhaust module 165 and lower chamber exhaust passage 164 to exhaust pump 734 .

Exhaust diversion valve 708 allows process gas from gas reservoir 706 to be exhausted to exhaust pump 734 while each splitter valve 726a-726f is closed. While all splitter valves 726a-726f are closed, the flow rate of process gas exhausted through exhaust diversion valve 708 is equal to the desired flow rate of process gas flowing past each splitter valve 726a-726f. Exhaust diversion valve 708 is closed when splitter valves 726a-726f are in the open position, allowing process gas to enter processing space 110. The combination of opening and closing the splitter valves 726a-726f and the exhaust directing valve 708 provides fast gas delivery times with little or no velocity and pressure increase. The total flow rate through each splitter valve 726a-726f and exhaust diversion valve 708 over time is controlled to be approximately constant using master flow controller 722.

Each splitter valve 726a-726f is coupled to gas reservoir 706 via a splitter conduit 725. Splitter conduit 725 is configured to branch into multiple gas lines and connect to each of splitter valves 726a-726f. Each splitter valve 726a-726f is coupled in parallel, and no splitter valves 726a-726b are in the same gas flow path. The plurality of splitter valves 726a-726f include a first splitter valve 726a, a second splitter valve 726b, a third splitter valve 726c, a fourth splitter valve 726d, a fifth splitter valve 726e, and a sixth splitter valve. 726f included. Each splitter valve 726a-726f is configured to control the flow rate of process gas therefrom from splitter conduit 725. Each splitter valve 726a-726f is controlled by one of valve controllers 724a-724f. Valve controllers 724a-724f are connected to master flow controller 722. Master flow controller 722 is configured to provide instructions to each valve controller 724a-724f. Each of the valve controllers 724a-724f is configured to control the configuration of the splitter valves 726a-726f such that each valve controller 724a-724f is configured to open or close one of the splitter valves 726a-726f. It is configured. Splitter valves 726a-726f allow the flow rate or partial pressure (i.e., concentration) of process gas flowing through each branch of splitter valve assembly 731 to be controlled prior to mixing with carrier gas at mixing point 732. . Thus, although the flow rate exiting each gas injector 108 may be the same, the partial pressure of the process gas in the gas stream exiting the gas injector 108 may vary between each gas injector 108. The partial pressure of the process gas through each of the gas injectors 108 may also be varied during the same process within the processing chamber, such that the concentration of the process gas through each gas injector 108 changes as one substrate is processed. .

First valve controller 724a is configured to open and close first splitter valve 726a. Second valve controller 724b is configured to open and close second splitter valve 726b. Third valve controller 724c is configured to open and close third splitter valve 726c. Fourth valve controller 724d is configured to open and close fourth splitter valve 726d. A fifth valve controller 724e is configured to open and close a fifth splitter valve 726e. The sixth valve controller 724f is configured to open and close the sixth splitter valve 726f. Each of the splitter valves 726a-726f can be opened or closed to varying degrees to partially restrict or allow flow of process gas through one of the splitter valves 726a-726f. Opening the splitter valves 726a-726f increases the flow rate through the one or more splitter valves 726a-726f. At least partially closing the one or more splitter valves 726a-726f reduces the flow rate through the one or more splitter valves 726a-726f.

Although shown as having six splitter valves 726a-726f and six valve controllers 724a-724f, other numbers of splitter valves 726a-726f and valve controllers 724a-724f are also contemplated. In some embodiments, there are 2-20 splitter valves 726a-726f, such as 3-15 splitter valves 726a-726f, such as 4-12 splitter valves 726a, 726f, such as 4-10 splitter valves 726a-726f. splitter valves 726a-726f, eg, 4-8 splitter valves 726a-726f, eg, 4-6 splitter valves 726a-726f. In the embodiment shown in FIGS. 1, 2A, 2B, 4A, and 4B, there are five splitter valves 726a-726f. Similarly, there may be from 2 to 20 valve controllers 724a-724f, such as from 3 to 15 valve controllers 724a-724f, such as from 4 to 12 valve controllers 724a-724f, such as from 4 to 10 valve controllers. There may be controllers 724a-724f, eg, 4-8 valve controllers 724a-724f, eg, 4-6 valve controllers 724a-724f. In the embodiment shown in FIGS. 1, 2A, 2B, 4A, and 4B, there are five valve controllers 724a-724f.

The flow rate through some splitter valves 726a-726f can be controlled to be less than the flow rate through other splitter valves 726a-726f. In some embodiments, each of the splitter valves 726a-726f and corresponding valve controllers 724a-724f are considered a splitter valve assembly 731.

Gas flows into a plurality of gas split conduits 733 through each of splitter valves 726a-726f. A gas splitting conduit 733 extends from each of the splitter valves 726a-726f to a mixing point 732 of a plurality of mixing points 732. The gas flow through each gas division conduit 733 is combined with a carrier gas at a mixing point 732. Carrier gas is supplied from a carrier gas supply source 728. Carrier gas is supplied from carrier gas supply 728 to each mixing point 732 via carrier gas conduit 730 . Carrier gas conduit 730 may include a splitter valve assembly similar to splitter valve assembly 731 described above. Alternatively, carrier gas conduit 730 is divided into multiple carrier gas lines. One of the carrier gas lines connects to each mixing point 732. The carrier gas supplied by carrier gas source 728 is any one or a combination of helium (He), nitrogen (N ₂ ), hydrogen (H ₂ ), argon (Ar), or oxygen (O ₂ ). It can be done. Other carrier gases are also envisioned. In some embodiments, carrier gas source 728 is replaced with a second process gas source.

After the process gas is combined with the carrier gas at one of the mixing points 732, the combined gas is combined for injection into the process space 110 via the gas injector 108. The gas is supplied to each of the above gas injectors 108. An individual mixed gas conduit 735 extends between each mixing point 732 and each corresponding gas injector 108 .

Each of valve controllers 724a-724f is connected to master flow controller 722. Each of the valve controllers 724a-724f is connected to the master flow controller 722 using one or more electrical connections or coupled using electronic or radio frequency (RF) signals. Master flow controller 722 is further connected to each of pressure controller 704, gas reservoir 706, and exhaust valve controller 712. Master flow controller 722 is configured to send and receive instructions to each of valve controllers 724a-724f, pressure controller 704, gas reservoir 706, and exhaust valve controller 712 to control the flow of process gas into processing space 110. There is.

Each of the splitter valves 726a-726f and the exhaust directing valve 708 are configured to control the flow rate of process gas through a conduit disposed within the gas supply assembly 700. The types of valves that may make up the splitter valves 726a-726f and the exhaust induction valve 708 include rotary valves, linear valves, and self-actuating valves. More specifically, splitter valves 726a-726f and exhaust directing valve 708 may be one of a ball valve, a plug valve, a butterfly valve, a gate valve, a globe valve, a pinch valve, a diaphragm valve, or a needle valve. The type of valve is selected depending, at least in part, on the degree of precision used in distributing process gases throughout gas supply assembly 700.

The gas supply assembly 700 allows control of both the flow rate of the gas mixture entering the processing space 110 and the concentration/partial pressure of the process gas in the gas mixture. By controlling both the concentration/partial pressure and the total flow rate of the process gas, it is possible to vary the distribution of the process gas across the substrate surface. By controlling the concentration of the process gas, it is possible to better control the deposition rate on different regions of the substrate.

FIG. 7B is a schematic gas flow diagram of the mixed gas assembly 700 of FIG. 7A and the second mixed gas assembly 701, according to an embodiment of the present disclosure. Each gas injector 108 is attached to one of the mixed gas conduits 735. Each of mixed gas conduits 735 extends from supply assembly 700 . Supply assembly 700 is shown in more detail in FIG. 7A. Second mixed gas assembly 701 is similar to supply assembly 700. A second mixed gas assembly 701 is connected to each gas injector 108 via a plurality of second mixed gas conduits 740 . A second mixed gas conduit 740 is similar to mixed gas conduit 735 but extends from second mixed gas assembly 701 . Each component within second mixed gas assembly 701 is similar to the components within supply assembly 700.

The second mixed gas assembly 701 can be utilized with the multilayer injector insert 600 of FIGS. 6A-6D. In embodiments described herein, a supply assembly 700 supplies gas to the first gas introduction passage 614a (FIGS. 6B and 6C) of the gas injector 108, and a second mixed gas assembly 701 supplies gas to the gas injector 108. Gas is supplied to the 108 second gas introduction passages 614b (FIGS. 6B and 6C). Therefore, the spread of the gas discharged by the gas injector 108 can be precisely controlled in both flow rate and process gas concentration.

Each of the exhaust module 165 and lower chamber exhaust passage 164 is in fluid communication with an exhaust conduit 720 for removing gas provided by both the first mixed gas assembly 700 and the second mixed gas assembly 701. In some embodiments, both mixed gas assemblies 700, 701 share a common exhaust system, such as exhaust conduit 720 and exhaust pump 734.

The first mixed gas assembly 700 and the second mixed gas assembly 701 may supply the same gas or may supply different gases. In some embodiments, a first mixed gas assembly 700 provides a first process gas for depositing a layer on the substrate 150. A second mixed gas assembly 701 is utilized to supply a second process gas to the processing space 110. The second process gas may be similar to the first process gas and may deposit a second layer on substrate 150. Alternatively, the second mixed gas assembly 701 provides a purge gas, a cleaning gas, or an etchant gas. In some embodiments, the same gas is utilized but provided at different flow rates or concentrations. Gases are supplied through the first mixed gas assembly 700 and the second mixed gas assembly 701, either simultaneously or staggered according to the gases flowing past and the desired process being performed within the processing chamber 100. can do.

FIG. 8 is a flow diagram of a method 800 for use with gas supply assembly 700 of FIG. 7A, according to an embodiment of the present disclosure. Method 800 is utilized to control the flow rate and concentration of process gases into a processing space, such as processing space 110. During step 802, a first gas mixture is introduced into a gas reservoir, such as gas reservoir 706. The first gas mixture includes a first concentration of process gas.

A gas reservoir is a pressure storage device configured to maintain the amount of gas therein at a predetermined pressure. The amount of gas is greater than about 100 sccm, such as greater than about 100 cm ³ of process gas, such as from about 100 cm ³ to about 750 cm ³ , such as from about 100 cm ³ to about 500 cm ³ of process gas. The pressure of the first gas mixture within the gas reservoir 706 is kept within the predetermined pressure ranges described above to avoid resonance modes within the gas reservoir that may generate dynamic pressure oscillations. An exhaust diversion valve and multiple splitter valves are utilized to maintain approximately constant pressure within the gas reservoir. The exhaust guide valve is the exhaust guide valve 708, and the plurality of splitter valves are splitter valves 724a to 724f.

A first gas mixture is introduced into the gas reservoir by a process gas source, such as process gas source 702 . The process gas supply is configured to provide a first gas mixture that includes a process gas. The process gas can be one or a combination of a silicon-containing gas, a germanium-containing gas, a nitrogen-containing gas, a carbon-containing gas, an oxygen-containing gas. Other types of process gases not listed are also possible. The process gas supply provides a first gas mixture at a predetermined first process gas concentration and flow rate, such that the mass flow rates of components in the first gas mixture are controlled by the process gas supply. There is. The flow rate of the first mixed gas from the process gas supply is a first flow rate. The first flow rate is about 100 sccm to about 2500 sccm, such as about 100 sccm to about 2000 sccm.

After step 802, another step 804 is performed to provide a first gas mixture to a plurality of splitter valves. The plurality of splitter valves can be splitter valves 726a-726f. A plurality of splitter valves are each disposed in a different branch of the splitter conduit, such as splitter conduit 725. Each of the plurality of splitter valves is utilized to control the flow rate of the first mixed gas therethrough. Accordingly, the splitter valve is utilized to control the flow rate of the first mixed gas across each branch of the splitter conduit 725. The flow rate of the first gas mixture through each splitter valve is equal to the total flow rate of the first gas mixture from the process gas supply divided by the number of splitter valves. In embodiments where there are five splitter valves, the flow rate of the first gas mixture is between about 20 sccm and about 500 sccm, such as between about 20 sccm and about 400 sccm. In embodiments where there are six splitter valves, the flow rate of the first gas mixture is between about 15 sccm and about 420 sccm, such as between about 15 sccm and about 335 sccm. Each splitter valve can be opened and closed to control the flow rate of the first mixed gas. In some embodiments, the splitter valve is controlled to allow a partial flow of the first gas mixture therethrough. Each splitter valve is individually controlled so that each splitter valve can be adjusted for the desired gas flow rate. After passing through the splitter valve, the first gas mixture enters a plurality of gas split conduits, such as gas split conduit 733 . One gas division conduit may be coupled to each of the splitter valves. Gas splitting conduit 733 carries the first gas mixture therethrough and connects to multiple mixing points, such as multiple mixing points 732 . Each of the gas division conduits 733 is coupled to one of the mixing points 732.

Another step 806 of providing a carrier gas to the carrier gas conduit is performed before, simultaneously with, or after step 804. A carrier gas is provided by a carrier gas source during step 806. The carrier gas source can be carrier gas source 728. The carrier gas source is configured to supply carrier gas at a flow rate of less than about 30 slm, such as from about 5 slm to about 30 slm, such as from about 10 slm to about 30 slm. The carrier gas may be any one or a combination of helium (He), nitrogen ( _N2 ), hydrogen ( _H2 ), argon (Ar), or oxygen ( _O2 ). Other carrier gases are also envisioned. The carrier gas conduit may be carrier gas conduit 730. The carrier gas conduit branches into multiple carrier gas lines. One carrier gas line is connected to each of the plurality of mixing points.

The carrier gas and the first gas mixture are simultaneously supplied through the carrier gas conduit in step 806 and after the first gas mixture has passed through the splitter valve in step 804. are mixed during step 808. The first mixed gas and the carrier gas are mixed at multiple mixing points. Each of the mixing points of the plurality of mixing points may be an intersection of one of the carrier gas lines of the carrier gas conduit and one of the gas division conduits. Accordingly, each mixing point is a T-joint or a wye for merging the distal end of the carrier gas line and the distal end of the gas splitting conduit to mix the carrier gas and the first mixed gas. May include fittings. A second gas mixture is produced by combining the carrier gas and the first gas mixture, and the second gas mixture flows out of the mixing point and through a plurality of gas mixture conduits, such as gas mixture conduit 735. . When initially mixed at the mixing point, the carrier gas and the first mixed gas may not be mixed uniformly. The carrier gas and the first gas mixture continue to mix while the second gas mixture flows through the plurality of gas mixture conduits and the one or more gas injectors.

The second mixed gas has a second process gas concentration that is lower than the first process gas concentration. The flow rate of the second mixed gas through each mixed gas conduit is equal to the total flow rate of both the first mixed gas and the carrier gas through each mixed gas conduit. The flow rate of the second mixed gas through each mixed gas conduit is about 2 slm to about 10 slm, such as about 4 to about 8 slm, such as about 6 slm. The flow rate of the second mixed gas through each mixed gas conduit may depend, at least in part, on the number of gas injectors in the processing chamber. The ratio of the first gas mixture to the carrier gas in the second gas mixture can be controlled and adjusted using the apparatus described herein, thereby increasing the ratio of the first gas mixture through each injector. Gas concentrations and flow rates are adjusted for each individual injector as desired for various processes. The total flow rate through each gas injector can be kept constant, and the concentration/partial pressure of the first gas mixture in the second gas mixture is varied between each gas injector.

The second gas mixture is flowed through the gas mixture conduit to the plurality of gas injectors. Each of the mixed gas conduits is coupled to a gas injector and supplies a second mixed gas to the gas injector. Once the second gas mixture is introduced into the gas injector, the second gas mixture is introduced into the processing space of the processing chamber during step 810. The introduction of the second gas mixture into the processing space takes place at a predetermined rate and gas distribution. Introducing the second gas mixture allows one or more layers to be formed on a substrate disposed within the processing space.

FIG. 9A is a schematic top view of a ring injector 900, according to an embodiment of the present disclosure. Ring injector 900 is configured to be placed around the processing space in addition to gas injector 108. Ring injector 900 is located within processing space 110 and attached to inner surface 404 of injection ring 116 or inner surface 304 of base ring 114 . As shown in FIG. 1, ring injector 900 is attached to inner surface 404 of injection ring 116. As shown in FIG. Ring injector 900 is positioned above the top surface of the substrate while the substrate is in the processing position. Accordingly, ring injector 900 is located above horizontal plane 125 in FIG. 1 and within upper chamber 111. Ring injector 900 is configured to supply precursors into processing space 110 through a plurality of holes 906 . Ring injector 900 provides flexibility in precursor delivery within the chamber. Ring injector 900 can supplement the gas flow from gas injector 108 and help control the deposition rate near the edge of substrate 150.

A ring supply line 902 is connected to the distribution body 908. The distribution body 908 is a ring-shaped distribution body 908 and is connected to the ring supply line 902 . Ring supply line 902 is configured to pass through a supply port (not shown) in the wall of processing chamber 100. Ring supply line 902 is configured to supply precursor gas to distribution body 908 . Ring supply line 902 and distribution body 908 are hollow passageways or conduits configured to allow process gases to flow therethrough. Distribution body 908 has an outer ring surface 904 and an inner ring surface 910. Outer ring surface 904 is configured to attach to a surface within processing space 110 , such as inner surface 404 of injection ring 116 .

Inner ring surface 910 has a plurality of holes 906 formed therethrough. The plurality of holes 906 are openings formed between the inner hollow portion of the dispensing body 908 and the inner ring surface 910. A plurality of holes 906 are spaced around the inner ring surface 910 to allow gas to be distributed at various circumferential locations around the processing space 110. The diameter of the distribution body 908 and the size of the holes 906 are influenced by the desired flow rate and the desired location of precursor distribution.

The diameter of the inner ring surface 910 is about 250 mm to about 450 mm, such as about 300 mm to about 400 mm, such as about 350 mm. The size of each hole 906 depends on the number of holes 906 and the position of the holes 906. Holes 906 can have a diameter of about 1 mm to about 5 mm, such as about 2 mm to about 4 mm in diameter, such as about 2 mm to about 3 mm in diameter. There are approximately 4 to 30 holes 906 disposed through inner ring surface 906, such as approximately 6 to 25 holes 906, such as approximately 8 to 20 holes 906. The holes 906 are evenly spaced around the entire circumference of the inner ring surface 910. In some embodiments, holes 906 are arranged asymmetrically about inner ring surface 906. The asymmetric distribution of holes 906 allows for increased concentration of process gas near the edges of substrate 150 that are far from gas injector 108 or upper chamber exhaust passageway opening 324 (FIG. 3B). Asymmetric distribution further assists in controlling gas flow through processing space 110.

FIG. 9B is a schematic top view of a ring injector 901 according to another embodiment of the present disclosure. In the embodiment of FIG. 9B, ring injector 901 is only configured to surround a portion of processing space 110, such that dispensing body 906 is not a complete ring. In the embodiment of FIG. 9B, the dispensing body 906 is a partial ring, such as a semicircle. Alternatively, the distribution body 906 can be a quarter ring or other arcuate segment. Alternatively, the dispensing body 906 can be a 3/4 ring such that the dispensing body 906 forms about 75% of a circle. Other embodiments of distribution body 906 form various partial rings. A partial ring is defined herein as a portion of a ring that forms a circle that is smaller than a full circle, such as from about 5% to about 95% of a full circle, such as from about 10% to about 90% of a full circle. be done.

The embodiment of FIG. 9B in which a partial ring is used for the distribution body 906 may be used for processing steps where distribution of gas around the entire circumference of the substrate is not desired. Other than the partial ring formation of distribution body 906, ring injector 901 of FIG. 9B is similar to ring injector 900 of FIG. 9A.

The components described herein allow for better uniformity and deposition control within a processing chamber, such as processing chamber 100. Although shown here together in one processing chamber 100, the components described herein can be utilized separately in existing or alternative deposition processing chambers.

Although the foregoing description is directed to embodiments of the disclosure, other and further embodiments of the disclosure may be devised without departing from the essential scope of the disclosure. The scope is defined by the claims below.

Claims (20)

A processing chamber for substrate processing, the processing chamber comprising:
an injection ring, the injection ring half including one or more injector passages disposed through the injection ring half;
one or more gas injectors, each of the one or more gas injectors disposed within one of the injector passages, each of the gas injectors comprising:
injector insertion part,
gas introduction passage,
a gas diffusion passage fluidly coupled to the gas introduction passage; and an outlet disposed through an injection face of the injector insert opposite the gas introduction passage and in fluid communication with the gas diffusion passage. one or more gas injectors including an opening;
A processing chamber for substrate processing, comprising: The processing chamber of claim 1, wherein each of the one or more gas injectors further comprises one or more heaters passing through the injector insert. 2. The processing chamber of claim 1, wherein there are three or more injector passages and three or more gas injectors, each of the gas injectors being oriented toward a central portion of the injection ring. The processing chamber of claim 1, wherein the gas introduction passageway is a single passageway disposed through an injector substrate. 2. The processing chamber of claim 1, wherein the gas diffusion passageway includes a plurality of passageway branches and a plurality of paths. 6. The process of claim 5, wherein a fin array is disposed between the gas diffusion passageway and the outlet opening, and a baffle array is disposed between the fin array and the outlet opening. chamber. further comprising a ring injector, the ring injector comprising:
a dispensing body including an inner ring surface;
a plurality of holes disposed through the inner ring surface;
2. The processing chamber of claim 1, comprising: A gas injector for use within a processing chamber, the gas injector comprising:
an injector insertion section;
a gas introduction passage disposed through the gas injector;
a gas diffusion passageway connected to the gas introduction passageway, the gas diffusion passageway forming a gas distribution tree;
an outlet opening disposed through an injection face of the injector insert opposite the gas introduction passage and in fluid communication with the gas diffusion passage;
Including gas injector. 9. The gas injector of claim 8, wherein the gas diffusion passage includes a plurality of passage branches and a plurality of paths. 10. The gas injector of claim 9, wherein a fin array is disposed between the gas diffusion passage and the outlet opening. 11. The gas injector of claim 10, wherein a baffle array is disposed between the fin array and the outlet opening. The baffle array includes a plurality of baffles, each baffle shaped to have a first surface facing the fin array that is wider than a second surface facing the outlet opening. The gas injector according to claim 11. 9. The gas injector of claim 8, further comprising one or more heaters disposed within the injector insert. 14. The gas injector of claim 13, wherein each of the one or more heaters is a resistive heating element or a radiant heating element. The gas introduction passageway is a first gas introduction passageway, the gas diffusion passageway is a first diffusion passageway, the outlet opening is a first outlet opening, and the injector insertion portion includes:
a second gas introduction passage;
a second gas diffusion passage;
a second outlet opening;
9. The gas injector of claim 8, further comprising: 16. A gas injector according to claim 15, wherein the first outlet opening is located below the second outlet opening. A mixed gas assembly for use within a processing chamber, comprising:
a gas reservoir having an inlet configured to be connected to a process gas supply;
an exhaust diversion valve fluidly coupled to the gas reservoir and configured to be coupled to an exhaust pump that bypasses the processing chamber;
a plurality of splitter valves arranged in parallel and fluidly coupled to the gas reservoir;
a processing chamber, wherein a processing volume of the processing chamber is in fluid communication with each of the splitter valves;
a master flow controller configured to control flow through each of the exhaust induction valve and the plurality of splitter valves;
A mixed gas assembly comprising: a plurality of gas division conduits, each gas division conduit fluidly coupled between one of the splitter valves and one of the plurality of mixing points; a plurality of gas division conduits;
a carrier gas conduit configured to fluidly couple to a carrier gas source and each of the plurality of mixing points;
a plurality of mixed gas conduits extending between the plurality of mixing points and the processing space;
18. The mixed gas assembly of claim 17, further comprising: 18. The gas mixing assembly of claim 17, further comprising a gas injector fluidly coupled to each of the splitter valves and configured to supply a mixed gas to the processing space. 18. The mixed gas assembly of claim 17, wherein each of the splitter valves further includes a valve controller configured to open and close the splitter valve.

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