KR101409974B1 - Gas injection-suction unit and atomic layer deposition apparatus having the same - Google Patents

Abstract

The gas intake / exhaust unit according to the present invention comprises: a gas supply pipe in which a gas supply passage is formed; A gas exhaust pipe in which a gas exhaust passage communicating with the gas supply passage is formed; And a gas intake pipe surrounding at least a part of an outer peripheral surface of the gas exhaust pipe so that a gas intake passage is formed therein. Therefore, in the case of being disposed close to the substrate, gas supply and suction are simultaneously performed. Since the deposition is performed at normal pressure, a device and time for securing a separate vacuum are not required. Further, since the continuous process can be performed, the pre- and post-treatments can be carried out together on a single line, and a plurality of gas intake / exhaust unit units can be provided to form a multi-component compound. In this case, the type of heat source and the supplied thermal energy can be individually adjusted to the decomposition temperature of each source.

Description

BACKGROUND OF THE INVENTION Field of the Invention [0001] The present invention relates to a gas absorber unit and an atomic layer deposition apparatus having the gas absorber unit,

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a gas intake and exhaust unit and an atomic layer deposition apparatus having the same, and more particularly to a gas intake and exhaust unit capable of depositing an atomic layer at normal pressure and accurately controlling a displacement amount or an intake amount of gas, And more particularly, to an atomic layer deposition apparatus equipped with an atomic layer deposition apparatus.

BACKGROUND ART [0002] In general, a semiconductor device or a flat panel display device is subjected to various manufacturing processes. In particular, a process for depositing a thin film necessary on a wafer or glass substrate is essential.

In the thin film deposition process, sputtering, chemical vapor deposition (CVD), atomic layer deposition (ALD), and the like are mainly used.

Among them, Atomic Layer Deposition (NAM) is a nanoscale thin film deposition technique using chemical adsorption and desorption of a monolayer. Separately separating each reactant and supplying it to the chamber in a pulse form, It is a new concept of thin film deposition technology using chemical adsorption and desorption by surface saturation reaction.

Since the conventional atomic layer deposition technique requires a vacuum state during the deposition process, an additional device for maintaining and managing the vacuum state is required, and the process time is prolonged, resulting in a decrease in productivity.

In addition, since the space for securing the vacuum is limited, it is not suitable for the display industry which seeks for large size and large size.

In addition, the atomic layer deposition apparatus according to the prior art has a limitation in that it is required to be provided in a vacuum chamber. Even when the atomic layer deposition apparatus can be operated under atmospheric pressure, there is a problem in that the supply and suction of the gas can not be independently controlled, have.

The present invention provides a gas absorber / absorber unit capable of atomic layer deposition at normal pressure and an atomic layer deposition apparatus having the same.

The present invention provides a gas intake and exhaust unit capable of exhausting gas and intake air in one unit, and an atomic layer deposition apparatus having the same.

According to an aspect of the present invention, there is provided a gas intake / exhaust unit comprising: a gas supply pipe in which a gas supply passage is formed; A gas exhaust pipe in which a gas exhaust passage communicating with the gas supply passage is formed; And a gas intake pipe surrounding at least a part of an outer peripheral surface of the gas exhaust pipe so that a gas intake passage is formed therein.

As described above, it is not necessary to provide separate means for exhausting or sucking the gas by performing exhaust and intake of gas through one unit, and the throughput of the atomic layer deposition process can be improved.

At least one gas supply nozzle communicating the gas supply passage and the gas discharge passage may be formed between the gas supply pipe and the gas exhaust pipe.

At least one gas exhaust part may be formed along the longitudinal direction of the gas exhaust pipe, and the gas exhaust part may be formed to communicate with the gas supply nozzle.

The gas intake passage may be formed so that a space is defined by the gas supply nozzle.

Wherein the gas supply nozzle at the center of the gas supply pipe has a size larger than the size of the gas supply nozzles at both ends or the gap between the gas supply nozzles at the center of the gas supply pipe is at both ends The distance between the gas supply nozzles may be smaller than the distance between the gas supply nozzles.

The gas exhaust pipe includes an exhaust guide formed to extend toward the outside of the gas exhaust pipe, and the gas exhaust unit may include at least one hole or slit formed between the exhaust guides.

A gas intake part is formed between one end in the circumferential direction of the gas intake tube and one end of the exhaust guide, and the gas intake part is located symmetrically with respect to the gas exhaust part along the circumferential direction of the gas exhaust tube or the gas intake tube .

The lowermost end of the one end of the gas intake pipe forming the gas intake portion may be located below the lowermost end of the one end of the exhaust guide.

The gas exhaust pipe may include a gas valve that is rotatably provided on an inner surface of the gas exhaust pipe and that communicates or blocks the gas exhaust passage with the gas exhaust unit.

The gas valve may rotate in a circumferential direction of the gas exhaust pipe along the inner surface of the gas exhaust pipe or adjust the opening of the gas exhaust unit while linearly moving in the longitudinal direction of the gas exhaust pipe.

When the gas valve rotates in the circumferential direction of the gas exhaust pipe along the inner surface of the gas exhaust pipe, the gas valve can rotate within a range of completely opening and closing the gas exhaust part.

Wherein the gas valve is provided with a plurality of holes and the gas valve is capable of simultaneously adjusting the opening of the gas exhaust part or independently adjusting the opening of the gas exhaust part when the gas valve moves linearly in the longitudinal direction of the gas exhaust pipe along the inner surface of the gas exhaust pipe .

A valve isolator may be formed between the gas exhaust pipe and the gas valve.

The valve isolator and the gas valve are formed in a cylindrical shape, and the gas valve can be inserted into the valve isolator.

Wherein a valve hole communicating with the through-hole is formed in the gas valve, and the through-hole communicating with the gas supply nozzle and the gas exhausting portion is formed symmetrically with respect to the center of the valve- The ball may be formed only on one side of the gas valve.

Meanwhile, the present invention can provide an atomic layer deposition apparatus having the above-described gas exhaust / absorber unit.

Wherein the gas intake / exhaust unit of the atomic layer deposition apparatus comprises: a source gas intake / exhaust unit unit for sucking and exhausting the source gas; A reaction gas inlet / outlet unit for sucking and discharging the reaction gas; And a purge gas intake and exhaust unit provided between the source gas intake and exhaust unit and the reaction gas intake and exhaust unit to exhaust and purge the purge gas.

A valve isolator made of Teflon may be formed between the gas exhaust pipe and the gas valve.

As described above, since the atomic layer deposition apparatus according to the present invention deposits at atmospheric pressure, it is possible to expect an effect of increasing the productivity because it requires no apparatus and time for securing a separate vacuum, and it is also applicable to the display field can do.

In the atomic layer deposition apparatus according to the present invention, various heat sources such as a halogen lamp and a laser can be used in the method of heating the surface of the substrate. In this case, the entire substrate is not heated but only the portion where the source is injected is temporarily heated , It is possible to prevent thermal diffusion, reduction in life span, physical deformation, and the like, which are other incidental problems due to the temperature increase.

In addition, the atomic layer deposition apparatus according to the present invention can increase the deposition rate by using an atmospheric plasma, an ultraviolet lamp, a laser, or the like, and can deposit a metal thin film and a nitride film.

In addition, the atomic layer deposition apparatus according to the present invention can be continuously processed, and the pre- and post-processing can be performed together on a single line. Multiple source gas desorbing unit units can be provided to form a multi-component system. In this case, there is an advantage that the type of the heat source and the supplied thermal energy can be individually adjusted according to the decomposition temperature of each source gas.

The atomic layer deposition apparatus according to the present invention may be capable of two-sided deposition when the gas intake / exhaust unit is installed upside down alternately. Gas exhaust unit in the longitudinal direction of the gas intake / exhaust unit, and the gas exhaust amount can be adjusted through the gas valve.

The gas sucking and discharging unit and the apparatus for vapor deposition according to the present invention can reduce the gas consumption and improve the pressure uniformity of the gas by using the gas supply nozzle and the gas valve communicating with the gas supply nozzle.

However, the effects of the present invention are not limited to the effects mentioned above, and other effects not mentioned can be clearly understood by those skilled in the art from the following description.

1 is a perspective view schematically showing an atomic layer deposition apparatus according to an embodiment of the present invention.
2 is a cross-sectional view of the atomic layer deposition apparatus according to FIG.
FIG. 3 is a perspective view showing a gas intake / exhaust unit used in the atomic layer deposition apparatus according to FIG. 1. FIG.
Fig. 4 is a transverse and longitudinal cross-sectional view of the gas intake and exhaust unit according to Fig. 3;
Figure 5 is a cross-sectional and longitudinal cross-sectional view of another embodiment of the gas sucking and discharging unit according to Figure 3;
6 is a cross-sectional view showing a modification of the atomic layer deposition apparatus according to FIG.
7 is a perspective view schematically showing an atomic layer deposition apparatus according to another embodiment of the present invention.
8 is a cross-sectional view of the atomic layer deposition apparatus according to FIG.
FIG. 9 is a perspective view showing a gas intake / exhaust unit used in the atomic layer deposition apparatus according to FIG.
10 is a perspective view showing a gas valve and a gas isolator of the gas intake and exhaust unit according to FIG. 9 separated from each other.
Fig. 11 is a transverse and longitudinal sectional view of the gas intake and exhaust unit according to Fig. 9; Fig.
12 is a cross-sectional view showing another embodiment of the gas intake / exhaust unit used in the atomic layer deposition apparatus according to FIG.
13 is a cross-sectional view showing a modified example of the atomic layer deposition apparatus according to FIG.

Hereinafter, embodiments according to the present invention will be described in detail with reference to the accompanying drawings. However, the present invention is not limited to or limited by the embodiments. Like reference symbols in the drawings denote like elements.

FIG. 1 is a perspective view schematically showing an atomic layer deposition apparatus according to an embodiment of the present invention, FIG. 2 is a sectional view of the atomic layer deposition apparatus according to FIG. 1, and FIG. 3 is a cross- Fig. 5 is a transverse and longitudinal cross-sectional view of another embodiment of the gas sucking and discharging unit according to Fig. 3, Fig. 6 is a side view of the gas sucking and discharging unit according to Fig. Sectional view showing a modified example of the atomic layer deposition apparatus according to FIG.

1 and 2, an atomic layer deposition apparatus 100 according to an embodiment of the present invention includes a source gas (not shown) for depositing an atomic layer on an upper surface or a surface of a substrate 110, A plurality of gas intake and exhaust units 130, 140 and 150 for injecting or sucking a reactive gas or a purge gas.

The plurality of gas sucking and discharging units 130, 140 and 150 are roughly tubular or pipe-shaped and are arranged so that their longitudinal direction intersects the conveying direction of the substrate 110, preferably perpendicular to the conveying direction of the substrate 110.

A plurality of gas intake and exhaust unit units 130, 140 and 150 may be transferred in a state where a plurality of gas intake and exhaust unit units 130, 140 and 150 are fixed or a substrate 110 is fixed, (130, 140, 150) may be transported together. When the substrate 110 and the gas intake and exhaust unit 130, 140 and 150 are transported together, they move in opposite directions. Thus, in either case, the substrate 110 and the gas intake and exhaust unit 130, 140, 150 move relative to each other. This relative movement direction TD is shown in FIG.

The atomic layer deposition apparatus 100 according to the present invention does not need a large work space even when a large area substrate is processed because the substrate 110 can move relative to the gas absorber unit 130, . In addition, since the foot print can be shortened by shortening the relative movement distance of the substrate 110 with respect to the gas intake / exhaust unit 130, 140, and 150, the large-area substrate can be easily processed.

A substrate temperature variable portion 120 may be provided under the substrate 110. The substrate temperature variable unit 120 may increase or decrease the temperature of the substrate portion to which the source gas is supplied. Since the temperature of the entire substrate 110 is not varied, but only the temperature of the substrate is varied, Thermal degradation, life span reduction, physical deformation, etc., which can be regarded as an incidental problem, can be prevented. The substrate temperature variable portion 120 may have a shape such as a heater or a cooling pad.

1 and 2, a description will be given of a case where the substrate 110 is moved forward or backward in the relative movement direction TD in a state where the gas intake and exhaust units 130, 140 and 150 are fixed.

The gas intake and exhaust unit units 130, 140, and 150 of the atomic layer deposition apparatus 100 according to one embodiment of the present invention includes a source gas intake and exhaust unit 130 for sucking and exhausting a source gas, a reactant gas intake and exhaust unit 140 for sucking and exhausting a reactive gas, And a purge gas intake and exhaust unit 150 that is provided between the source gas intake and exhaust unit 130 and the reaction gas intake and exhaust unit 140 to suck and purge the purge gas.

The source gas desorbing unit 130, the purge gas desorbing unit 140, the reactive gas sucking and discharging unit 140, and the reaction gas sucking and discharging unit 140 are arranged from left to right when the substrate 110 is transferred from right to left along the relative movement direction TD. (140) and a purge gas intake / exhaust unit (140) are arranged in order. Accordingly, the source gas, the purge gas, the reactive gas, and the purge gas are sequentially supplied as the surface of the substrate 110 comes into contact with the source gas for the first time, and the atomic layer is deposited on the surface of the substrate 110 have.

It is preferable that the gas intake and exhaust unit units 130, 140 and 150 of the atomic layer deposition apparatus 100 according to an embodiment of the present invention are disposed at the same or a constant distance along the relative movement direction TD. However, such a separation distance can be adjusted in consideration of the time required for each reaction process step.

It is preferable that the lowermost ends of the source gas sucking and discharging unit 130, the reaction gas sucking and discharging unit 140 and the purge gas sucking and discharging unit 140 maintain a predetermined gap G with the surface of the substrate 110. More specifically, the lowermost end of one end of the gas intake pipes 132, 142, 152 of the gas intake / exhaust unit 130, 140, 150 must maintain a constant gap G with the surface of the substrate 110. It is preferable that the interval G does not exceed 20 mm. When the interval G is smaller than 20 mm, the gas exhaust portions 137, 147, 157 of the gas intake / exhaust unit 130, 140, 150 and the upper surface of the substrate 110 are in contact with each other or too close to each other, 133, 153, and when it is larger than 20 mm, the gas supply efficiency may be lowered.

The gas intake and exhaust unit 130, 140, and 150 may perform or simultaneously perform exhaust (or injection) and intake (or intake) of gas in one unit. Hereinafter, the gas intake and exhaust unit units 130, 140, and 150 will be described in detail with reference to the drawings. The source gas inlet / outlet unit 130, the reactant gas inlet / outlet unit 140, and the purge gas inlet / outlet unit 150 have the same detailed structure except that they are different from each other.

3 and 5, the gas intake and exhaust unit units 130, 140, and 150, which can be used in the atomic layer deposition apparatus 100 according to an embodiment of the present invention, include gas supply pipes 131, 141, and 151 in which gas supply passages 135, 145, At least a part of the outer circumferential surface of the gas exhaust pipes 134, 144 and 154 is formed so that the gas exhaust pipes 134, 144 and 154 and the gas intake passages 139, 149 and 159 in which the gas exhaust passages 138 and 148 and 158 communicating with the gas supply passages 135, 142, 152, which surround the gas intake pipes 132, 142, 152.

By performing exhaust and intake of gas through one gas intake and exhaust unit 130, 140, and 150 as described above, it is not necessary to provide separate means for exhausting or inserting gas, and it is possible to improve the throughput of the atomic layer deposition process .

The gas exhaust pipes 134, 144 and 154 are formed in the inside of the gas intake pipes 132, 142 and 152, while the gas supply pipes 131, 141 and 151 through which the gas supplied from the external gas supply means (not shown) As shown in FIG.

The gas supply pipes 131, 141 and 151 may be formed on the opposite sides of the gas exhaust pipes 134, 144 and 154 on the basis of the gas intake pipes 132, 142 and 152.

The cross sectional size (diameter or area) of the gas supply pipes 131, 141 and 151 is preferably smaller than the gas exhaust pipes 134, 144 and 154 and the gas intake pipes 132, 142 and 152. Inside the gas supply pipes 131, 141 and 151, gas supply passages 135, 145 and 155 communicating along the longitudinal direction may be formed.

3 and 4, both ends of the gas intake and exhaust unit 130, 140 and 150 are shown as being opened. However, in order to prevent gas from being exhausted to other parts, the gas intake and exhaust unit 130, 1401, have.

At least one gas supply nozzle 136, 146, 156 for communicating the gas supply passages 135, 145, 155 and the gas exhaust passages 138, 148, 158 may be formed between the gas supply pipes 131, 141, 151 and the gas exhaust pipes 134, 144, 154.

The gas passing through the gas supply passages 135,145 and 155 of the gas supply pipes 131,141 and 151 must flow through the gas exhaust passages 138,148 and 158 of the gas exhaust pipes 134,144 and 154 so as to be exhausted to the outside of the gas intake and exhaust unit units 130,140 and 150. To this end, the gas supply passages 135, 145, 155 and the gas exhaust passages 138, 148, 158 must be in communication with each other, and the gas supply nozzles 136, 146, 156 are connected to each other.

The gas supply passages 135,145 and 155, the gas supply nozzles 136,146 and 156 and the gas exhaust passages 138,148 and 158 communicate with each other but the gas intake passages 139,149 and 159 do not communicate with each other. Since the gas supply passages 135, 145 and 155, the gas supply nozzles 136, 146 and 156 and the gas exhaust passages 138 and 148 and 158 are parts involved in gas exhaustion and the gas intake passages 139, 149 and 159 are parts involved in gas intake, do.

As shown in FIGS. 4 (b) and 4 (c), the gas supply nozzles 136, 146 and 156 may be formed so as to become narrower from the gas supply passages 135, 145 and 155 toward the gas exhaust passages 138, 148 and 158. Since the portion of the gas supply nozzles 136, 146 and 156 that is in communication with the gas exhaust passages 138, 148 and 158 is the narrowest or smallest, the gas can be injected into the gas exhaust passages 138, 148 and 158, and a large amount of gas can pass through the gas exhaust passages 138, 148, Can be filled. 4 (b) and 4 (c) are cross-sectional views taken along the line A-A in Fig. 4 (a). 4 (a) is a longitudinal sectional view of the gas intake and exhaust unit 130, 140, 150 according to FIG.

Referring to FIG. 4A, a plurality of gas supply nozzles 136, 146, and 156 are formed, but only one gas supply nozzle 136, 146, or 156 may be formed.

On the other hand, at least one gas exhaust part 137, 147, 157 may be formed along the longitudinal direction of the gas exhaust pipes 134, 144, 154. The gas exhaust units 137, 147 and 157 are the outlets for exhausting the gas filled in the gas exhaust passages 138, 148 and 158 to the outside of the gas intake and exhaust unit 130, 140 and 150. For this purpose, the gas exhaust units 137, 147, 157 have a configuration in which the outside communicates with the gas exhaust passages 138, 148, 158.

Here, the gas exhaust units 137, 147, and 157 may be formed to communicate with the gas supply nozzles 136, 146, and 156. It is preferable that the gas exhaust units 137, 147, and 157 and the gas supply nozzles 136, 146, and 156 are formed on the same line as shown in FIG. 4 (a), but the present invention is not limited thereto.

The gas intake passages 139, 149, and 159 may be formed to partition the space by the gas supply nozzles 136, 146, and 156. The gas intake passages 139, 149, and 159 formed between the gas intake pipes 132, 142 and 152 and the gas exhaust pipes 134, 144 and 154 are connected to the gas supply nozzles 136, Respectively. At this time, it is preferable that the gas intake passages 139, 149, and 159 are symmetrically partitioned by the gas supply nozzles 136, 146, and 156.

The sizes of the gas supply nozzles 136, 146 and 156 located at the center of the gas supply pipes 131, 141 and 151 may be larger than the sizes of the gas supply nozzles 136, 146 and 156 located at both ends. If the gas is supplied from both ends of the gas supply pipes 131, 141 and 151, since the gas pressure in the middle of the gas supply pipes 131, 141 and 151 becomes smaller than the gas pressure at both ends of the gas supply pipes 131, 141 and 151, It may not flow into the gas exhaust passages 138, 148, 158 in a short time. In order to prevent this, the gas supply nozzles 136, 146 and 156 located at the center of the gas supply pipes 131, 141 and 151 are made larger than those at both ends. Alternatively, the gap between the gas supply nozzles 136, 146, 156 at the center of the gas supply pipes 131, 141, 151 may be smaller than the gap between the gas supply nozzles 136, 146, 156 at the both end portions.

If gas is supplied only at one end rather than at both ends of the gas supply pipes 131, 141, and 151, the gas supply nozzles 136, 146, 156 may be increased in size or closer to the opposite end of the gas supply nozzles 136, 146, It can be dense.

The gas exhaust pipes 134, 144 and 154 may include exhaust guides 137a, 147a and 157a extending toward gas exhaust parts 137, 147 and 157 toward the outside of the gas exhaust pipes 134, 144 and 154, respectively. As shown in FIGS. 3 and 4, the exhaust guides 137a, 147a, and 157a extend downward to locate the substrate 110, and the gas that has passed through the gas exhaust units 137, 147, 110 in order to be able to be brought into contact.

The exhaust guides 137a, 147a, and 157a may be formed on both sides so as to be symmetrical with respect to an imaginary line passing through the centers of the gas supply nozzles 136, 146, and 156. The angle between the exhaust guides 137a, The gas that has passed through the exhaust guides 137a, 147a, and 157a can be guided to reach the substrate 110 while spreading.

Here, the gas exhaust portions 137, 147, 157 may include at least one hole or slit formed between the exhaust guides 137a, 147a, 157a. That is, the gas exhaust portions 137, 147, 157 may be at least one hole or slit formed between the exhaust guides 137a, 147a, 157a. 4 (a) shows a case in which the gas exhausting parts 137, 147 and 157 are a plurality of holes.

In the case where the gas exhaust ports 137, 147 and 157 are formed with a plurality of holes, it is preferable to increase the size of the holes or to reduce the space between the holes in the portions where the pressure is small, depending on the pressure magnitude or difference according to the positions in the gas exhaust flow paths 138, Do. In the case where the gas exhaust ports 137, 147 and 157 are formed as a single slit, it is preferable to increase the width of the slit in the portion where the pressure is small, depending on the pressure magnitude or the difference depending on the position in the gas exhaust flow paths 138, 148 and 158.

The gas intake portions 133, 143 and 153 are formed between the circumferential one ends 133a, 143a and 153a of the gas intake tubes 132, 142 and 152 and one ends of the exhaust guides 137a and 147a and 157a, 147, and 147 along the circumferential direction of the gas intake tubes 132, 142, and 152, respectively.

The circumferential ends 133a, 143a and 153a of the gas intake tubes 132, 142 and 152 forming the gas intake portions 133, 143 and 153 may be bent toward the exhaust guides 137a, 147a and 157a. The circumferential one ends 133a, 143a and 153a of the gas intake tubes 132, 142 and 152 are bent toward the exhaust guides 137a, 147a and 157a to prevent the size or the width of the gas intake units 133, 143 and 153 from becoming excessively large . Since the one ends 133a, 143a and 153a in the circumferential direction of the gas intake tubes 132, 142 and 152 are bent toward the exhaust guides 137a, 147a and 157a, the gas intake tubes 132, 142 and 152 are cylindrically formed .

The lowermost or bottom surfaces of the ends 133a, 143a and 153a of the gas intake pipes 132, 142 and 152 forming the gas intake portions 133, 143 and 153 in FIGS. 4 (b) and 4 (c) Or at a lower position than the lowest position. At this time, the lowermost end or the lowermost end of one end 133a, 143a, 153a of the gas intake pipes 132, 142, 152 may be formed to be longer than the lowermost end of the exhaust guides 137a, 147a, 157a or 3 mm further downward than the lowermost end thereof. That is, a gap between the lowermost end of the ends 133a, 143a, 153a of the gas intake pipes 132, 142, 152 and the lowermost end or the lowermost end of the exhaust guide 137a, 147a, 157a may be formed to be about 3 mm. As described above, the lowermost end or the lowermost end of one end 133a, 143a, 153a of the gas intake pipes 132, 142, 152 is located at the lowermost end or the lower end of the exhaust guide 137a, 147a, 157a, . It is also possible to prevent the gas that has passed through the gas exhaust units 137, 147 and 157 from flowing into the gas intake units 133, 143 and 153 by the lowermost end of the ends 133a, 143a and 153a of the gas intake pipes 132, . Thus, it is possible to prevent the discharged gas from being absorbed in the reaction and being removed.

If gas exists in the gas exhaust passages 138, 148 and 158 in which the gas exhaust portions 137, 147 and 157 are opened, the gas can be always discharged to the substrate 110 through the gas exhaust portions 137, 147 and 157. However, even if the discharged gas is not required for the reaction, if the gas is discharged toward the substrate 110, the atomic layer deposition process is not properly performed.

The gas exhaust pipes 134, 144 and 154 are rotatably provided on the inner surfaces of the gas exhaust pipes 134 and 144 and 154 so that the gas exhaust pipes 138 and 138 and the gas exhaust pipes 137 and 137, . ≪ / RTI >

The gas valves 160 and 170 are rotated in the circumferential direction of the gas exhaust pipes 134, 144 and 154 along the inner surfaces of the gas exhaust pipes 134, 144 and 154 as shown in FIG. 4, or in the longitudinal direction of the gas exhaust pipes 134, 144 and 154, The opening of the gas exhaust units 137, 147, and 157 can be controlled while performing linear motion.

4, the gas exhaust units 137, 147, and 157 can be opened or closed while the gas valve 160 is rotated within a predetermined angle range in a state of being in contact with the inner surfaces of the gas exhaust pipes 134, 144, and 14. To this end, a valve driving part 162 is provided at one end of the gas valve 160. The valve driving part 162 may be formed of a step motor or the like.

4B does not allow the gas in the gas exhaust passages 138, 148 and 158 to pass through the gas exhaust portions 137, 147 and 157 because the gas valve 160 completely closes the gas exhaust portions 137, 147 and 157. In this state, when the gas valve 160 is rotated by a certain angle by the valve driving unit 162, the gas exhaust units 137, 147 and 157 are opened and the gas can be exhausted as shown in FIG. 4 (c).

When the gas valve 160 rotates in the circumferential direction of the gas exhaust pipes 134, 144 and 154 along the inner surfaces of the gas exhaust pipes 134, 144 and 154, the gas valve 160 can rotate within the range of completely opening and closing the gas exhaust units 137, 147 and 157 have. That is, it is not necessary that the gas valve 160 rotate to 360 degrees along the inner surface of the gas exhaust pipes 134, 144, 154, and it is enough if the gas exhaust part 137, 147, 157 is rotated only to the fully opened or closed position. Accordingly, the gas valve 160 functions as a kind of on / off switch for opening and closing a gas exhaust part 137, 147, 157.

Further, the gas valve 160 may adjust the opening amount of opening and closing the gas exhaust portions 137, 147 and 157 to control the flow rate of the exhaust gas.

5A and 5B, the gas exhaust units 137, 147 and 157 are closed, and the gas exhaust units 137, 147 and 157 are open. 5B is a cross-sectional view taken along a line B-B in Fig. 5A, and Fig. 5D is a cross-sectional view taken along a line C-C in Fig. 5 (a) and 5 (c) are longitudinal sectional views of the gas intake and exhaust unit 130, 140, 150 according to FIG.

As shown in Fig. 5, when the gas exhaust portions 137, 147, 157 are formed in a plurality of holes and the gas valve 170 linearly moves in the longitudinal direction of the gas exhaust pipes 134, 144, 154 along the inner surfaces of the gas exhaust pipes 134, 144, 154 The gas valve 170 can control the opening of the gas exhaust units 137, 147, 157 simultaneously or independently.

In order for the gas valve 170 to regulate or independently control the opening of the gas exhaust units 137, 147 and 157, a separate gas valve 170 must be installed independently for each of the gas exhaust units 137, 147, and 157.

When the gas valves 170 are independently formed, not only the gas exhaust units 137, 147 and 157 are opened or closed as a whole but also the opening amounts of the gas exhaust units 137, 147 and 157 are different from each other in accordance with the pressure distribution in the gas exhaust passages 138, Can be controlled. For example, by controlling the gas exhaust portions 137, 147, 157 at the low pressure positions to be opened a lot and the gas exhaust portions 137, 147, 157 at the high pressure positions to be opened little, the gas can be uniformly distributed through the gas exhaust portions 137, 147, It can be discharged.

The atomic layer deposition apparatus 100 according to an embodiment of the present invention shown in FIGS. 1 to 5 injects a source gas onto a substrate 110 in a source gas desorbing unit 130, and a purge gas desorbing unit 150 A purge gas is injected onto the substrate 110. [ Reaction gas is then injected onto the substrate 110 in the reactive gas absorber / absorber unit 140 to deposit an atomic layer.

In order to deposit the silicon thin film, any one of silane (Silane, SiH4) or disilane (Si2H6) or silicon tetrafluoride (SiF4) containing silicon is used as the source gas, Or ozone (O3) gas can be used. The purge gas may be any one of argon (Ar), nitrogen (N2), helium (He), or a mixture of two or more gases. However, the present invention is not limited thereto, and the number and types of the source gas, the purge gas, and the reaction gas may be substantially varied.

It is preferable that the angle formed by the gas intake portions 133, 143, 153 and the gas exhaust portions 137, 147, 157 with the center of the gas intake and exhaust unit 130, 140, 150 is 5 degrees to 90 degrees. When the angle formed by the gas intake units 133, 143 and 153 and the gas exhaust units 137, 147 and 157 with the centers of the gas intake and exhaust unit units 130, 140 and 150 is less than 5 degrees, the gas exhaust units 137, 147 and 157 of the gas intake and exhaust units 130, The gas can be absorbed by the gas inlet portions 133, 143, and 153 before the gas is supplied, and the gas supply efficiency with respect to the gas deposited on the substrate is lower than the supplied gas. When the angle formed between the gas intake portions 133, 143 and 153 and the gas exhaust portions 137, 147 and 157 and the center of the gas intake and exhaust unit 130, 140 and 150 is greater than 90 degrees, the gas intake portions 133, 143 and 153, The efficiency becomes low.

The gas intake portions 133, 143, 153 may be disposed at mutually symmetrical positions with respect to the gas exhaust portions 137, 147, 157. The gas intake portions 133, 143 and 153 are disposed on both sides of the gas exhaust portions 137, 147 and 157 to suck the remaining gas on the substrate in the previous step and then inject the gas of this step onto the substrate through the gas exhaust portions 137, 147 and 157 It is preferable that the gas intake portions 133, 143, 153 are disposed at mutually symmetrical positions with respect to the gas exhaust portions 137, 147, 157, since the remaining gas can be sucked on the substrate again after the reaction. However, the present invention is not limited thereto, and the gas intake units 133, 143, and 153 may be disposed on the same side with respect to the gas exhaust units 137, 147, and 157.

Meanwhile, since the gas sucking and discharging unit 130, 140, 150 of the atomic layer deposition apparatus 100 according to an embodiment of the present invention simultaneously performs gas supply and sucking, it is not necessary to perform a vacuum state and can be performed at normal pressure.

FIG. 6 shows a modification of the atomic layer deposition apparatus 100 according to an embodiment of the present invention. The atomic layer deposition apparatus 100 shown in FIG. 6 may include an atmospheric plasma generating unit 180, a purge gas sucking and discharging unit 150, a source gas sucking and discharging unit 130, and a halogen lamp 190. In this case, the substrate 110 may be subjected to a deposition process while relatively moving relative to the gas intake / exhaust unit 130, 150 from left to right.

When the substrate 110 starts to move from the left to the right, the specific portion of the substrate 110 (that is, the portion to which the source gas is to be injected) is first heated by the halogen lamp 190. The process of heating the substrate 110 can be performed on a specific portion of the substrate 110 on which the exhausting and sucking of the source gas is performed. More specifically, the halogen lamp 190 may be arranged to be ahead of the source gas absorber / absorber unit 130 with respect to the direction of relative motion TD of the substrate 110 relative to the gas absorber / The halogen lamp 190 can heat a portion of the substrate 110 where the source gas is supplied to increase the yield of atomic layer deposition.

As the heating of the substrate 110, a laser, an ultraviolet lamp, or the like may be used as well as the halogen lamp 190. The halogen lamp 190 may include a heat source 193, a housing 191 surrounding the heat source 193 and a plurality of cooling units 192 formed inside the housing 191. The cooling portion 192 of the halogen lamp 190 prevents the portion of the substrate 110 other than the surface thereof from being heated so that the temperature of the entire substrate 110 can be prevented from rising.

If the substrate 110 is transported from left to right, the halogen lamp 190 on the right operates to heat the substrate 110 before the source gas is supplied. Next, the source gas is sucked and sucked in the source gas sucking and discharging unit 130, and the purge gas is sucked and sucked in the purge gas sucking and discharging unit 150. At this time, the intake of the source gas and the purge gas is removed by sucking the remaining source gas and purge gas after contributing to the deposition process. Next, the reaction gas is injected onto the substrate 110, and the apparatus of FIG. 6 uses the atmospheric pressure plasma generator 180 instead of the reactive gas absorber / Through this process, a one-cycle atomic layer deposition process is performed.

Since the atomic layer deposition apparatus 100 shown in FIG. 6 can deposit an atomic layer at normal pressure, the atmospheric plasma generating unit 180 can be used to supply the reactive gas onto the substrate 110. The atmospheric-pressure plasma generator 180 is formed by forming a cold plasma torch. Since the atmospheric pressure plasma generator 180 supplies the reactive gas, the reactive gas absorber / extractor unit 140 can be omitted when the atmospheric plasma generator 180 is used.

Hereinafter, an atomic layer deposition apparatus according to another embodiment of the present invention will be described. FIG. 7 is a perspective view schematically showing an atomic layer deposition apparatus according to another embodiment of the present invention, FIG. 8 is a sectional view of the atomic layer deposition apparatus according to FIG. 7, and FIG. 9 is a cross- Fig. 10 is a perspective view showing a gas valve and a gas isolator of the gas intake and exhaust unit according to Fig. 9 separated from each other, Fig. 11 is a transverse and longitudinal sectional view of the gas intake and exhaust unit according to Fig. 9, FIG. 12 is a cross-sectional view showing another embodiment of the gas intake / exhaust unit used in the atomic layer deposition apparatus according to FIG. 7, and FIG. 13 is a cross-sectional view showing a modification of the atomic layer deposition apparatus according to FIG.

The atomic layer deposition apparatus 200 shown in FIGS. 7 to 13 differs from the atomic layer deposition apparatus 100 shown in FIGS. 1 to 6 in the operation and shape of the gas valve, and is mostly the same. Therefore, the following description will focus on the other parts.

The atomic layer deposition apparatus 200 shown in FIGS. 7 and 8 includes a source gas absorber / absorber unit (not shown) sequentially provided in a direction orthogonal to a relative movement direction TD of the substrate 210 placed on the substrate temperature variable portion 220 230, a purge gas intake and exhaust unit 250, a reactive gas intake and exhaust unit 240, and a purge gas intake and exhaust unit 250. Here, the source gas intake / exhaust unit 230, the reaction gas intake / exhaust unit 240, and the purge gas intake / exhaust unit 250 have the same structure.

8, it is necessary to maintain a constant gap G between the gas intake and exhaust unit 230, 240, and 250 and the substrate 210. The gap G is the same as that of the apparatus 100 of FIG.

9 to 11, except for the gas valve 260 and the valve isolator 270, the gas sucking and discharging unit 230, 240, 250 includes the gas sucking and discharging unit 130, 140, 150 of the deposition apparatus 100 shown in FIGS. ).

The gas intake and exhaust unit units 230, 240 and 250 include gas supply pipes 231, 241 and 251, gas supply passages 235, 245 and 255 formed in the gas supply pipes 231, 241 and 251, gas supply nozzles 236, 246 and 256 communicating with the gas supply passages 235, 245 and 255, gas supply nozzles 236, 246 and 256 Gas exhaust channels 238, 248 and 258 communicating with the gas exhaust passages 238 and 248 and 258 forming the gas exhaust passages 238 and 248 and 258 and gas exhaust channels 237 and 247 and 257 communicating with the gas exhaust passages 238 and 248 and 258, Gas exhaust pipes 232, 242 and 252 surrounding the gas exhaust pipes 237, 247 and 257 and exhaust guides 237a and 247a and 257a extending toward the substrate 210, gas exhaust pipes 234 and 244 and 254 surrounding the gas exhaust pipes 234, 244 and 254, Gas intake portions 233, 243, and 253 formed between the ends 233a, 243a, and 253a of the gas intake pipes 232, 242 and 252 and the exhaust guides 237a, 247a and 257a, . ≪ / RTI >

A valve isolator 270 is inserted into the inner surfaces of the gas exhaust pipes 234, 244, and 254, and a gas valve 260 is inserted into the valve isolator 270.

As shown in FIG. 10, the gas valve 260 and the valve isolator 270 may be formed in a cylindrical shape. The gas valve 260 can open and close the gas exhaust portions 237, 247, and 257 while rotating in the rotation direction RD while being inserted into the valve isolator 270.

Unlike the gas valves 160 and 170 of the deposition apparatus 100 shown in FIGS. 1 to 6, the gas valve 260 is formed in a cylindrical shape and is not operated in contact with the gas exhaust pipes 234, 244, and 254, So as to be in contact with the body 270. Here, the valve isolator 270 is a kind of bearing-like member for ensuring smooth rotation of the gas valve 260, and the valve isolator 270 may be formed of Teflon. However, the material of the valve isolator 270 is not limited to Teflon, and any material that can reduce the frictional force during the rotation operation of the gas valve 260 may be used.

10 and 11, the valve isolator 270 is provided with a through hole 273 communicating with the gas supply nozzles 236, 246 and 256 and the gas exhaust portions 237, 247 and 257, respectively, symmetrically with respect to the center of the valve isolator 270 And a valve hole 263 communicating with the through hole 273 is formed in the gas valve 260 and the valve hole 263 may be formed only on one side of the gas valve 260. 11, the through hole 273 of the valve isolator 270 is formed not only on the upper side as shown but also on the lower side thereof, whereas the valve hole 263 of the gas valve 260 is formed on the other side Do not.

The valve hole 263 is communicated with the upper through hole 273 or communicated with the lower through hole 273 while the gas valve 260 is rotated while being inserted into the valve isolator 270, It is possible to intermittently exhaust gas. The valve isolator 270 is connected to the gas exhaust pipes 234, 244 and 254 so that the upper through hole 273 of the valve isolator 270 communicates with the gas supply nozzles 236, 246 and 256 and the lower through hole 273 communicates with the gas exhaust portions 237, 247 and 257 Is inserted and fixed.

Fig. 11 (b) is a cross-sectional view taken along the section line DD in Fig. 11 (a), Fig. 11 11 (e) along the section line "FF ". 11 (a), 11 (c) and 11 (e) are longitudinal sectional views of the gas intake and exhaust unit 230, 240, and 250 according to FIG.

11A and 11B show a state in which the valve hole 263 of the gas valve 260 is in communication with the upper hole 273 of the valve isolator 270. In this state, the gas supplied through the gas supply pipes 231, 241, and 251 passes through the gas supply nozzles 236, 246, and 256 to fill the gas exhaust channels 238, 248, and 258. When the gas valve 260 further rotates in this state, the state shown in (c) and (d) of FIG. 11 is obtained. In this state, since the valve hole 263 of the gas valve 260 does not communicate with the through hole 273 of the valve isolator 270, gas does not flow into the gas exhaust passages 238, 248, 258 and the gas exhaust passages 238, Are not injected onto the substrate 210 through the gas exhaust portions 237, 247, and 257. [

When the gas valve 260 further rotates, the state shown in (e) and (f) of FIG. 11 is obtained. This state allows the gas in the gas exhaust passages 238, 248 and 258 to pass through the gas exhaust portions 237, 247 and 257 since the valve hole 263 of the gas valve 260 is communicated with the lower through hole 273 of the valve isolator 270 And may be injected onto the substrate 210.

The valve hole 263 of the gas valve 260 may be integrally formed in the longitudinal direction of the gas valve 260 or may have a predetermined distance in the longitudinal direction of the gas valve 260. Accordingly, it is necessary to adjust the gas injection method according to the reaction process. The gas can be adjusted by the injection method or the point injection method according to the shape of the valve hole 263 of the gas valve 260.

Further, the gas exhaust portions 237, 247, and 257 are disposed along the longitudinal direction of the gas intake pipes 232, 242, and 252 in the form of a hole having a constant separation distance or a single integrated slit in order to provide gas injection or point injection. Can be manufactured.

The gas intake pipes 232, 242, and 252 of the gas intake and exhaust unit units 230, 240, and 250 shown in FIGS. 9 to 11 are generally D-cut cylinders, but may be formed in other shapes.

The gas intake and exhaust unit units 330, 340, and 350 according to another embodiment shown in FIG. 12 (a) have a cylindrical shape in which the gas intake pipes 332, 342, and 352 are not cut. The exhaust guides 337a, 347a, and 357a forming the gas exhaust portions extend downward and then are bent to both sides to form guide bends 337b, 347b, and 357b.

Here, the guide bends 337b, 347b, and 357b have the same radius of curvature as the gas intake pipes 332, 342, and 352, respectively. Gas intake portions are formed between the ends of the guide bends 337b, 347b and 357b and the ends 333a, 343a and 353a of the gas intake pipes 332, 342 and 352, respectively.

The gas intake pipes 432, 442 and 452 of the gas intake and exhaust unit 430, 440 and 540 according to another embodiment shown in FIG. 12 (b) have a curved surface and a flat surface. The exhaust guides 437a, 447a and 457a extend downward and then are bent to both sides to form guide bends 437b, 447b and 457b. The guide bends 437b, 447b and 457b are bent straight.

The lower ends 433a, 443a and 453a of the gas intake pipes 432a and 443a and 453a are bent straight toward the guide bends 437b and 447b and 457b and the lower ends 433a and 443a and 453a of the gas intake pipes 432, And a gas intake portion is formed between the portions 437b, 447b, and 457b. The gas intake and exhaust unit units 430, 440 and 540 shown in Fig. 12 (b) are arranged such that the lowest surfaces of the lower ends 433a, 443a and 453a of the gas intake tubes 432, 442 and 452 are located below the lowest surfaces of the guide bends 437b, 447b and 457b And the interval between the two lowest surfaces is preferably not more than 3 mm.

FIG. 13 shows a modification of the atomic layer deposition apparatus 200 according to another embodiment of the present invention. The atomic layer deposition apparatus 200 shown in FIG. 13 may include an atmospheric plasma generator 280, a purge gas inlet / outlet unit 250, a source gas inlet / outlet unit 230, and a halogen lamp 290. In this case, the substrate 210 may be subjected to a deposition process while relatively moving relative to the gas intake / exhaust unit 230, 250 from left to right. The apparatus shown in Fig. 13 operates in the same manner as the apparatus shown in Fig.

While the present invention has been described in connection with what is presently considered to be practical exemplary embodiments, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, It will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims. Accordingly, the spirit of the present invention should not be construed as being limited to the embodiments described, and all of the equivalents or equivalents of the claims, as well as the following claims, belong to the scope of the present invention .

100, 200: atomic layer deposition apparatus 110, 210:
120, 220: substrate temperature variable unit 130, 230, 330, 430: source gas exhaust /
131, 141, 151: gas supply pipes 132, 142, 152:
133, 143, 153: gas intake portions 134, 144, 154:
135, 145, 155: gas supply passage 136, 146, 156: gas supply nozzle
137, 147, 157: gas exhaust units 138, 148, 158:
139, 149, 159: gas intake passages 140, 240, 340, 440:
150, 250, 350, 450: purge gas intake /
160, 170, 260: Gas valve 270:

Claims (18)

A gas supply pipe in which a gas supply passage is formed;
A gas exhaust pipe in which a gas exhaust passage communicating with the gas supply passage is formed; And
And a gas intake pipe surrounding at least a part of an outer circumferential surface of the gas exhaust pipe so that a gas intake passage is formed therein,
At least one gas supply nozzle communicating between the gas supply passage and the gas exhaust passage is formed between the gas supply pipe and the gas exhaust pipe,
Wherein the gas intake passage is formed so that a space is defined by the gas supply nozzle.
delete The method according to claim 1,
Wherein at least one gas exhaust portion is formed along the longitudinal direction of the gas exhaust pipe, and the gas exhaust portion is formed to communicate with the gas supply nozzle.
delete The method of claim 3,
The size of the gas supply nozzle at the center of the gas supply pipe may be larger than the size of the gas supply nozzle at both ends,
Wherein an interval between the gas supply nozzles at the center portion of the gas supply pipe is formed to be smaller than an interval between the gas supply nozzles at both end portions.
6. The method of claim 5,
Wherein the gas exhaust pipe includes an exhaust guide extending toward the outside of the gas exhaust pipe to the gas exhaust portion,
Wherein the gas exhaust comprises at least one hole or slit formed between the exhaust guides.
The method according to claim 6,
A gas intake part is formed between one end in the circumferential direction of the gas intake tube and one end of the exhaust guide,
Wherein the gas intake portion is located symmetrically with respect to the gas exhaust portion along the circumferential direction of the gas exhaust pipe or the gas intake pipe.
8. The method of claim 7,
Wherein the lowermost end of the one end of the gas intake pipe forming the gas intake portion is located below the lowermost end of the one end of the exhaust guide.
The method according to any one of claims 3 and 5 to 8,
Wherein the gas exhaust pipe includes a gas valve rotatably provided on an inner surface of the gas exhaust pipe, the gas exhaust pipe communicating with or blocking the gas exhaust passage.
10. The method of claim 9,
Wherein the gas valve rotates in the circumferential direction of the gas exhaust pipe along an inner surface of the gas exhaust pipe or adjusts the opening of the gas exhaust part while performing a linear movement in the longitudinal direction of the gas exhaust pipe.
11. The method of claim 10,
Wherein the gas valve rotates within a range that completely closes the gas exhaust portion when the gas valve rotates in the circumferential direction of the gas exhaust pipe along the inner surface of the gas exhaust pipe.
11. The method of claim 10,
The gas valve may simultaneously control the opening of the gas exhaust part or independently adjust the opening of the gas exhaust part when the gas exhaust part is formed of a plurality of holes and the gas valve moves linearly in the longitudinal direction of the gas exhaust pipe along the inner surface of the gas exhaust pipe. The gas intake / exhaust unit.
10. The method of claim 9,
And a valve isolator is formed between the gas exhaust pipe and the gas valve.
14. The method of claim 13,
Wherein the valve isolator and the gas valve are formed in a cylindrical shape, and the gas valve is inserted inside the valve isolator.
15. The method of claim 14,
Wherein the valve isolator is provided with a through hole communicating with the gas supply nozzle and the gas exhaust portion symmetrically with respect to the center of the valve isolator,
Wherein the gas valve is formed with a valve hole communicating with the through hole, and the valve hole is formed only on one side of the gas valve.
An atomic layer deposition apparatus comprising a gas intake / exhaust unit according to claim 9.
17. The method of claim 16,
The gas intake /
A source gas sucking and discharging unit for sucking and discharging the source gas;
A reaction gas inlet / outlet unit for sucking and discharging the reaction gas; And
And a purge gas intake / exhaust unit provided between the source gas intake / exhaust unit and the reaction gas intake / exhaust unit to suck and purge purge gas.
18. The method of claim 17,
And a valve isolator made of Teflon is formed between the gas exhaust pipe and the gas valve.

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