JPH03122281A - Cvd device - Google Patents

Abstract

PURPOSE:To form a thin film excellent in uniformity of film thickness and film quality by providing the mutually separated individual chambers to a gas blowout mechanism part and separately introducing a plurality of gaseous raw materials thereinto and forming the exclusive blowout ports to a blowout face. CONSTITUTION:A gaseous raw material of one side is passed through a first introduc tion port 37 of a gas blowout mechanism part 30 which is formed to the bottom part 31a of a cylindrical block 31 and introduced into a chamber R1. This gaseous raw material is flow-straigtened by a diffusion plate 32 and the respective pipes 33a of a gas blowout pipe part 33 and thereafter blown out for a base plate. Gas of the other side is passed through a second introduction port 38 of a gas blowout mechanism part 30 which is provided to a second cylindrical block 34 and introduced into a cham ber R2. This gas is supplied for the base plate through the gaps 36 between the inner walls of the holes 35a of diffusion plates 35 and pipes 33a. The chamber R1, R2 are separated and mutually sealed and therefore a plurality of gaseous raw materials are not mixed until the interval of blowout of these gases. Generation of a misty reactant in vapor phase is inhibited because the respective gaseous raw materials are properly mixed when these are blown out.

Description

Detailed Description of the Invention [Field of Industrial Application] The present invention relates to a CVD apparatus, and in particular, at least two types of CVD gases supplied to a reaction chamber are separately introduced to the gas outlet of the reaction chamber, and the gas The present invention relates to a CVD apparatus that mixes and reacts a plurality of types of gas downstream of its mouth to form a thin film with high uniformity in film thickness, etc. on a substrate.

[Conventional technology]

BACKGROUND ART 1. With the increase in the density of LSIs, the patterns of semiconductor elements are becoming finer and more three-dimensional. In manufacturing such semiconductor devices, it is important to form a flat thin film on a pattern with large steps and undulations, and to flatten these steps and undulations. The question is whether to form a thin film. From this point of view, various methods are currently being considered as to what kind of process should be used to planarize the silicon dioxide 5in2 as the interlayer insulating film. Tetra-ethoxy-ortho-hydrogen is used as a raw material for a technology that is considered to be very promising in the future.
C using silicate (hereinafter abbreviated as TE01)
There is a VD method. There are various types of CVD methods, such as a plasma CVD method, a thermal CVD method, and a CVD method using ozone O1. Among these, Ozone 03 and TE
The CVD method according to 01 can be formed at a lower temperature (~400°C), so it does not deteriorate the characteristics of the underlying AI thin film, and the film shape such as steps is better, compared to other methods. Are better. In this method, film formation is conventionally performed in a pressure range from 100 Tort to atmospheric pressure, and the film formation rate is a maximum of 3000 people/min.
degree has been obtained.

Next, ozone 0. and TE01 by CVD.
Examples of the configuration of a conventional apparatus for forming an iO□ film are shown in Figures 10 to 1.
This will be explained based on FIG.

FIG. 10 shows a first conventional device, and in FIG.
is a reaction chamber, and in the reaction chamber 1 there is installed a substrate holder 3 equipped with a temperature adjustment mechanism including a heater 3a and the like to mount a substrate 2 and adjust the temperature of the substrate 2. Reaction chamber 1
is connected to a vacuum pump 5 via a valve 4, and the interior of the reaction chamber 1 is evacuated by the vacuum pump 4 and set to a desired vacuum state. The reaction gas TE01 is liquid 7 at room temperature.
and is housed in the bubbler container 6. The TEO 57 thus provided is bubbled with argon gas supplied from the argon (Ar) cylinder 8 and introduced into the reaction chamber 1 . The flow rate of argon gas supplied from the argon cylinder 8 is controlled by a mass flow controller 9. The other reactive gas, ozone O1, is oxygen (0
2) Oxygen in the cylinder 10 is supplied to the ozonizer 11, and a silent discharge is generated there. Ozone O5 generated here is a mixed gas with oxygen 02, and ozone 0. contains 3 to 10%.

The flow rate of the mixed gas is controlled by a mass flow controller 12, and a pipe 13 connects the bubbler container 6 and the reaction chamber 1.
supplied to At this location, ozone 0, vaporized TE
Mixed with 01. The mixed two types of gas are transferred to pipe 13
is introduced into the reaction chamber 1 through the reaction chamber 1, further mixed and rectified by the gas diffusion plate 14 provided at the inlet of the reaction chamber 1,
After that, SiO is supplied to the opposing substrate 2 and deposited on the substrate 2.
□ Form a film. A feature of this conventional apparatus is that ozone O3 gas and TEOS gas are mixed at a location in the pipe 13 in front of the inlet of the reaction chamber 1.

FIG. 11 shows a second conventional device, in which two
This is a device that separately introduces different types of gases into a reaction chamber 1 and supplies them to the surface of a substrate 2. Since the basic configuration is the same as that shown in FIG. 10, the same elements as those shown in FIG. 10 are given the same reference numerals. The constituent components are ozone 03 and oxygen 02 generated by the ozonizer 11.
A mixed gas of T is supplied to the pipe 13 before the reaction chamber 1
Rather than mixing it with EOS gas, it is separately introduced into an annular pipe 15 having a large number of small holes arranged in the front space of the substrate 2 of the reaction chamber 1 via a pipe 17, and each of the large number of small holes is The structure is such that the mixed gas is sprayed onto the substrate 2 as shown by arrows 16 from . The TEOS gas is configured to be bubbled with argon gas and supplied to the substrate 2 via the piping 13 and the gas diffusion plate 14, as in the case of the apparatus shown in FIG.

FIG. 12 shows a third conventional device, and this device is also configured to separately introduce two types of gases into the reaction chamber 1 and supply them to the substrate 2, similar to the second conventional device. There is. This conventional device is described in the document rDENKIKAGAKU, 56.
．． No. 7 (1988) P527J, and this document shows experimental results of normal pressure CVD using O9 to TEO8. In FIG. 12, reference numeral 20 denotes a gas blowing section disposed in the front space of the substrate 2 attached to the substrate holder 3;
0 is configured as a dispersion head having a plurality of dispersion plates 20a.

As a result, the gas blowing section 20 has a plurality of grooves 21 formed between each dispersion plate 20a, and a pipe for the TEOS gas and a pipe for the mixed gas of ozone O1 and oxygen O2 are provided at the bottom of the grooves 21. connected alternately. Because of this configuration,
The two gases are mixed in front of the substrate 2, and 5in2 is deposited on the substrate 2, which is heated by a temperature adjustment mechanism in the substrate holder 3. The generated reaction gas and unreacted gas are exhausted to the outside of the reaction chamber through an exhaust pipe 22 provided around the gas blowing section 20.

[Problem to be solved by the invention]

According to the first conventional device, since the two types of gas are mixed before the gas diffusion plate 14, it is excellent in terms of uniformity of film quality on the substrate 2, and the uniformity in film thickness and film quality is improved. A good thin film can be easily obtained. However, on the other hand, ozone O7 and TE01
In the above system, a mist-like reactant is generated in the gas phase simply by mixing the two, which has the drawback that the film forming efficiency is reduced and particles are generated.

According to the second conventional device, the two types of gas are not mixed (introduced separately into the reaction chamber 1), so compared to the first conventional device, ozone O5 and TE0 are
The reaction in the gas phase of No. 1 can be reduced. However, on the other hand, in order to obtain a highly uniform thin film on the substrate 2, the ozone 03 must be blown out particularly uniformly, and in order to achieve this with the second prior art, the annular pipe 15 is It has the disadvantage that it is quite difficult, as it depends on how the small holes are arranged.

Further, according to the third conventional device, the reaction between ozone 03 and TE01 in the gas phase can be reduced as in the second conventional device. However, on the other hand, it is not possible to obtain a sufficiently good film quality from the viewpoint of uniformity of film quality, etc. Therefore, the substrate 2 and the substrate holder 3 are reciprocated in the direction of the arrow 23 in the figure to ensure uniformity of the film quality. The problem is that the configuration is complicated.

As is clear from the above explanation, in conventional CVD equipment, at least two types of raw material gases are introduced separately into the reaction chamber 1 in order to reduce reactions in the gas phase and reduce the amount of mist-like reactants. When the structure is as follows, there is a problem that a thin film having a sufficiently good uniformity in film thickness and film quality cannot be formed.

SUMMARY OF THE INVENTION In order to solve the above-mentioned conventional problems, it is an object of the present invention to maintain uniformity of film thickness and film quality on a substrate even if at least two types of raw material gases are introduced separately into a reaction chamber. It is an object of the present invention to provide a CVD apparatus that can form an extremely good thin film and is equipped with a gas blowing mechanism section that has a simple structure.

[Means to solve the problem]

A first CVD apparatus according to the present invention includes a reaction chamber having an airtight structure and whose internal space is kept in a vacuum, a substrate installed in the reaction chamber and on which a thin film is formed, and a substrate holding the substrate. In a CVD apparatus comprising a substrate holder equipped with a temperature adjustment device for adjusting the temperature of the substrate, and a plurality of raw material introduction devices provided for introducing each of at least two types of raw material gases into the reaction chamber, a front surface of the substrate is provided. A gas blowing mechanism part is provided in the space and has a raw material gas blowing surface facing the base, and the gas blowing mechanism parts are separated from each other and receive raw material gases introduced from each of the plurality of raw material gas introduction devices. It has separate chambers, and is configured such that a plurality of blow-off holes dedicated to each source gas, which communicate with the respective chambers, are formed on the source gas blow-off surface.

In the second CVD apparatus according to the present invention, in the above configuration, two types of raw material gas are introduced, and a first blowing hole and a second blowing hole are provided on the raw material gas blowing surface of the gas blowing mechanism section. are formed concentrically.

In the third CVD apparatus according to the present invention, in the above configuration, the gas supply pipe for at least one type of raw material gas is extended to a corresponding chamber of the gas blowing mechanism section, and the extended portion is formed in a spiral shape. In addition, a plurality of holes are formed in the wall of the extended portion to release the raw material gas.

A fourth CVD apparatus according to the present invention is characterized in that, in the above configuration, the gas blowing mechanism section is equipped with a temperature adjustment device.

[Effect]

According to each of the above-mentioned CVD apparatuses of the present invention, due to the structure of the gas blowing mechanism section, a plurality of raw material gases are introduced without being mixed to a position almost in front of the substrate, and until they are blown out to the substrate, they remain in the gas phase. Since the reaction can be suppressed and a large number of blow-off holes for each raw material gas are provided in an appropriate arrangement on the gas blow-off surface, the uniformity of the thickness and quality of the thin film formed on the substrate can be improved.

According to the second CVD apparatus of the present invention, since the outlet ports for the two types of raw material gases are formed concentrically, the plurality of raw material gases are well mixed in front of the substrate, and the uniformity of the film thickness, etc. improve.

According to the third CVD apparatus of the present invention, the raw material gas supply pipe is formed in a spiral shape, and a large number of raw material gas discharge holes are formed in a distributed manner, so that the raw material gas is distributed evenly with respect to the substrate. I try to be given. This further improves the uniformity of the thickness of the thin film.

〔Example〕

Embodiments of the present invention will be described below with reference to the accompanying drawings.

FIG. 1 shows a first embodiment of the invention. In this embodiment, the same elements as those of the conventional CVD apparatus explained in FIG. 10 are given the same reference numerals. In FIG. 1, in a reaction chamber 1, a substrate 2 is mounted and a substrate holder 3 equipped with a temperature adjustment mechanism including a heater 3a for adjusting the temperature state of the substrate 2 is disposed above the substrate holder 3. . A vacuum pump 5 is provided in the reaction chamber 1 via a valve 4, and the inside of the reaction chamber 1 is evacuated by the vacuum pump 5 to a vacuum state. 6 is a bubbler container containing TEO 87 in a liquid state; TEO 87 is bubbled with argon gas supplied from an argon (Ar) cylinder 8 and whose flow rate is controlled by a mass flow controller (MFC) 9; 13 into the reaction chamber 1. Ozone O1, which is another reactive gas, is oxygen (0
2) Oxygen in the cylinder 10 is supplied to the ozonizer 11, where it is generated by silent discharge to form a mixed gas with oxygen. The mixed gas is controlled by a mass flow controller (MFC).
) 12, and then introduced into the gas blowing mechanism 30 in the reaction chamber 1. CVD according to the invention
In the case of the device, TEOS gas and mixed gas (ozone 0.
and oxygen 02) are introduced into mutually separated chambers in the gas blowing mechanism section 30 installed in the reaction chamber 1 through separate source gas supply pipes. This gas blowing mechanism part 3
0 is arranged in the space in front of the substrate 2 in the reaction chamber 1 .

The configuration of the gas blowing mechanism section 30 will be explained based on FIGS. 1 and 2. FIG. 2 is an enlarged view of the gas blowing mechanism section 30. As shown in FIG. The gas blowing mechanism section 30 includes a first cylindrical block 31 having a bottom portion 31a and a stepped hole 31b, a diffusion plate 32 disposed in the stepped portion of the stepped hole 31b of the cylindrical block 31, and a substrate 2. a gas blowing pipe section 33 having a plurality of pipes 33a facing the front space of the first cylindrical block 31; It is composed of a diffusion plate 35 disposed on the end surface of the cylindrical block 34 on the substrate 2 side. The diffusion plate 35 is located at a position facing the substrate 2, and all the introduced raw material gases are released from this outer surface position, so that it functions as a raw material gas blowing surface in the gas blowing mechanism section 30.

The piping 13 for supplying TEOS gas is connected to the bottom 31a of the cylindrical block 31 in the gas blowing mechanism section 30, and the first cylindrical block 31, the diffusion plate 32, and the gas blowing pipe section 33 connect to the TEOS gas introduction section. Configure.

Further, the second cylindrical block 34 and the diffusion plate 35 constitute a mixed gas introducing section. The diffuser plate 35 has a plurality of holes 35a, and the diameter of the holes is larger than the outer diameter of each pipe 33a of the gas blowing pipe section 33, and the tip of the pipe 33a is connected to the diffuser plate 35. It is configured concentrically so as to be located in the hole 35a of the hole 35a. A perspective view of a part of the upper surface of the gas blowing mechanism section 30 is shown in FIG. 3. In FIG. 3, reference numeral 35 denotes a diffusion plate of the mixed gas introduction section, and the diffusion plate 35 has a plurality of holes 35a formed therein, and each pipe 33a of the gas blowing pipe section 33 is arranged concentrically with respect to the hole 35a. is located. Hole 35a
A gap 36 is formed between the inner wall surface of the pipe 33a and the pipe 33a. The hole 35a is formed, for example, as a circular hole, and correspondingly, the outlet of the pipe 33a is also circular. However, the shape of the outlet is not limited to a circle.

In the above configuration, TEOS gas and argon gas are
The gas is introduced into the room R1 of the gas blowing mechanism section 30 through the first inlet 37 of the gas blowing mechanism section 30 formed at the bottom 31a of the cylindrical block 31, and the diffusion plate 32 and each pipe of the gas blowing pipe section 33 are introduced into the room R1 of the gas blowing mechanism section 30. After being rectified by 33a, it is blown out to the substrate 2. On the other hand, ozone 0. The mixed gas containing gas is introduced into the room R2 of the gas blowing mechanism section 30 through the second inlet 38 of the gas blowing mechanism section 30 provided in the second cylindrical block 34, and is introduced into the room R2 of the gas blowing mechanism section 30 through the hole 35a of the diffusion plate 35.
The liquid is blown out from the gap 36 formed between the inner wall of the pipe 33a and the pipe 33a, and is supplied to the substrate 2. In such a configuration, the chamber R1 formed inside the first cylindrical block 31 and the chamber R2 formed inside the second cylindrical block 34 are completely connected to each other by the bottom wall of the gas blowing pipe section 33. Since the TEOS gas and the mixed gas are separated from each other and sealed from each other, the TEOS gas and the mixed gas are separated from each other by the diffusion plate 35 in the figure of the gas blowing mechanism section 30.
There is no mixing before the air is blown out from the top of the tank.

An example in which a 5in2 film was actually formed using the CVD apparatus shown in FIG. 1 will be described.

First, the reaction chamber 1 is evacuated by opening the valve 4 and operating the vacuum pump 5 to create a desired vacuum state.

Next, the heater 3a inside the substrate holder 3 is caused to generate heat by a temperature adjustment mechanism (not shown), and the substrate 2 disposed on the substrate holder 3 is heated to a temperature of 350 to 400°C. after that,
Argon gas is supplied from an argon cylinder 8 at a flow rate of about 100 cc/min to the bubbler container 6, which has been heated to a temperature of about 65° C. by a heating device such as a constant temperature bath (not shown), and bubbling is started. This bubbling causes T
The vaporization of E01 is promoted, and TE01 in a gaseous state is transferred to pipe 1.
3. The gas is blown out from each pipe 33a of the gas blowing pipe section 33 into the front space of the substrate 2 through the inlet 37 and the diffusion plate 32. On the other hand, the mixed gas of ozone and oxygen with an ozone concentration of about 4% by volume generated in the ozonizer 11 has a concentration of about 1000% by volume due to the action of the mass flow controller 12.
It is introduced into the second introduction port 38 of the gas blowing mechanism section 30 via the piping 17 at a flow rate of c c/win, and the diffusion plate 3
It is blown out into the space in front of the substrate 2 from the gap 36 between the pipe 33a and the pipe 33a. As described above, the TEOS gas blown from the upper surface of the gas blowing mechanism section 30 and the mixed gas are mixed in the front space of the substrate 2, and as a result, a SiO2 film is formed on the substrate 2 at a rate of about 2000 people/min. is deposited. During film formation, the pressure inside the reaction chamber 1 was maintained at about 50 Torr by changing the opening degree of the valve 4.

In the above embodiment, as dimensions of each component, for example, the diameter of the gas blowing mechanism section 30 is 1.60 mm.

The inner diameter of the pipe 33a of the gas blowing pipe section 33 is 1 mm.
, the gap width of the gap 36 was set to 0.1 mm. Here, if the size of the gap 36 is made too large, the rectifying effect will be weakened, so it cannot be made too large.

Further, the plurality of pipes 33a of the gas blowing pipe section 33 are arranged in, for example, a square grid.

In the above embodiment, the mixed gas outlet was provided concentrically around the TEOS gas outlet, but instead, it was provided at a different location other than around the TEOS gas outlet. It is also possible to ensure that the gas is evenly distributed. Furthermore, it is also possible to form a plurality of second introduction ports 38, which were provided at only one location in the first embodiment, around the cylindrical diameter block 34 at equal intervals.

Next, FIG. 4 shows a second embodiment of the present invention, and is a diagram similar to FIG. 2 in which only the gas blowing mechanism section 30 is shown on an enlarged scale. The rest of the configuration is the same as the configuration shown in FIG. 1, so a description thereof will be omitted. In this example as well, TEO
The configuration of the S gas introduction section is the same, and the TEOS gas is introduced through the pipe 13, the cylindrical block 31, the introduction port 37, the diffusion plate 32, and the gas blowout pipe section 33. The feature of this embodiment lies in the mechanism for introducing the mixed gas of ozone and oxygen.

In the mixed gas introduction mechanism according to this embodiment, the tip of the mixed gas supply pipe 17 is connected to a large number of gas blowing pipes 33.
The reason is that it is formed as a spiral pipe 40 wound around the space between the pipes a. The shape and arrangement of this piping 40 are shown in FIG. According to the winding method according to this embodiment, for example, the wire is wound spirally from the periphery inward toward the center, and when the center is reached, the wire is then wound from the center back to the periphery. Further, as shown in FIG. 4, small holes 40a for blowing out gas are formed in the lower wall of the pipe 40 at intervals of, for example, about 20 mm. Therefore, the mixed gas flows through the small hole 4 of the pipe 40.
0a and a gap 36 formed between the gas blowing pipe section 33 and the diffusion plate 35, the flow is rectified in two stages. The state of blowing out the mixed gas is indicated by an arrow 41 in FIG.

In this way, the small holes 40a are provided in the lower wall to increase the number of rectification stages, and the blow-off piping 40 is arranged in a spiral shape, so that the uniformity of blow-out of the mixed gas can be improved. As a result, it was possible to further improve the uniformity of film quality, etc.

FIG. 6 shows the results of an experiment in which a 5in2 film was formed using the CVD apparatus having the gas blowing mechanism shown in FIG. 4 under the same conditions as in the first embodiment. It is a graph showing the relationship between the distance to the upper surface of the gas blowing mechanism section 30 (horizontal axis) and the film formation rate (vertical axis). This graph shows two characteristics A and B. Characteristic A indicated by a cross is a characteristic based on the conventional device shown in FIG. Characteristic B indicated by Q is data obtained with the CVD apparatus of the second embodiment. In both characteristics A and B, as the distance between the substrate 2 and the upper surface of the gas blowing mechanism section 30 increases, the film formation rate increases, reaches a maximum value, and then decreases. However, there is a difference in the maximum values between characteristics A and B, and the maximum value of the CVD apparatus according to the present invention is approximately 30% larger than that of the conventional one. The reason why such a difference occurs is that the gas phase reaction due to the mixing of TEOS gas and ozone gas is considerably reduced in the case of the present invention, and the film formation rate is increased accordingly. Furthermore, the uniformity of film thickness was within ±5% for both the conventional apparatus and the apparatus of the present invention on 4-inch wafers. Therefore, even with the apparatus according to the present invention that employs a configuration in which two types of raw material gases are introduced separately, good results can be obtained regarding the uniformity of the thin film.

In the first and second embodiments described above, the following changes can be made in terms of structure. In each of the above embodiments, one diffuser plate 32 and one diffuser plate 35 were provided, but as shown in FIG.
It is also possible to arrange a plurality of at least two sheets of 5B. By increasing the number of each diffusion plate in this way, it is possible to improve the uniformity of the thickness of the thin film formed on the substrate 2. The TEOS gas diffusion plates 32A and 32B are arranged parallel to the stepped hole 31b of the cylindrical block 31 having two steps. In addition, a diffusion plate 35A for mixed gas,
35B, the arrangement position of the diffusion plate 35A is the same as that of the above-mentioned diffusion plate 35, but the position of the air outlet is changed to the pipe 33.
The position is different so that it is located approximately in the middle of the pipe 33a rather than around the pipe 33a. That is, on the upper surface of the gas blowing mechanism section 30, the TEOS gas blowout port and the mixed gas blowout port are arranged at alternately different positions. On the other hand, by enlarging the axial dimension of the cylindrical block 34, the diffusion plate 35B is disposed approximately at an intermediate position in the axial direction.

Each pipe of the gas blowing pipe section 33 is inserted into a plurality of small holes formed in the diffusion plate 35B, and the mixed gas is blown out from the gap between the inner wall of the small hole and the pipe 33a. Therefore, the positions of the gas outlets are shifted between the diffusion plates 35A and 35B. Due to this configuration, the pipe 17 for supplying the mixed gas is connected to the lower side of the diffusion plate 35B in the cylindrical block 34, and a second mixed gas inlet 38 is provided on the lower side of the diffusion plate 35B. It turns out.

FIG. 8 shows an embodiment in which the position of the third gas inlet 38 is changed. As shown in Figure 8, mixed gas piping 1
7 is not connected to the wall of the second cylindrical block 34, but inserted into the TEOS gas pipe 13 and directly connected to the center of the bottom wall of the gas blow-off pipe 33. It is composed of The rest of the structure is the same as that shown in FIG. According to this configuration, since the second gas inlet 38 is located at the center, the gas can be blown relatively uniformly from the distance to the plurality of mixed gas blow-off ports.

FIG. 9 shows another embodiment of the present invention, and this figure is also similar to FIG. 2, showing only the gas blowing mechanism section 30. The other configurations are the same as those shown in FIG.

In this embodiment, the cylindrical block 31 and the diffusion plate 32 are made of a metal member such as copper that has good thermal conductivity, and the cylindrical block 31 further includes a heater 50 built therein. Although the power supply that supplies power to the heater 50 and the temperature adjustment mechanism that adjusts the temperature of the heater 50 are not shown in FIG. 9, the cylindrical block 31 and the diffusion plate 32 are It is heated to a temperature of approximately 500°C. Further, the mixed gas diffusion plate 51- has a required thickness, and a water channel 52 is provided inside the thickness. The water channel 52 provided in this diffusion plate 51 is connected to the supply pipe 53.
and a drain pipe 54, hot water is supplied by the supply pipe 53 in the direction shown by an arrow 55, and the water pipe 5
4 discharges hot water in the direction of arrow 56.

The mixed gas diffusion plate 51 is maintained at a constant temperature by this hot water. Further, the second cylindrical block 34 and the gas blowing pipe section 33 are made of a material with poor thermal conductivity such as SiO2 or ceramic.

According to the CVD apparatus having the gas blowing mechanism section configured as described above, the TEOS gas introduced from the inlet 37 is heated close to its own decomposition temperature (approximately 600 degrees Celsius), so that it is likely to react with ozone gas in the next step. change in state.

On the other hand, since ozone gas has a characteristic that the higher the temperature, the easier it is to decompose.
The temperature is lowered by the hot water flowing through the tank, thereby suppressing the decomposition of ozone gas.

As a result, the 5j02 film deposited on the substrate 2 using the apparatus according to this example not only has the above-mentioned effect of improving the uniformity of the film thickness, but also particularly increases the film-forming efficiency and significantly increases the film-forming speed. The effect is that it can be improved. Further, by using hot water of about 90° C., there is also an effect of suppressing dew condensation of the TEOS gas in the gas blowing pipe section 33.

In each of the above embodiments, CVD using a mixed gas containing TEOS gas and ozone has been explained as an example, but the apparatus configuration having the gas blowing mechanism according to the present invention is as follows.
The invention is not limited to this, and other thin film production equipment that uses multiple gases, such as thermal CVD equipment, plasma C
It can be used for VD devices, etc.

〔Effect of the invention〕

As is clear from the above description, the present invention provides the following effects.

A gas blowing mechanism is provided in the reaction chamber of the CVD apparatus, and the structure of the gas blowing mechanism allows multiple source gases to be separately introduced into the gas blowing mechanism, and each source gas is introduced into the space in front of the substrate. Since the structure is configured so that multiple raw material gases are appropriately mixed at the time of blowing out, the generation of mist-like reactants in the gas phase can be suppressed, and a thin film with good uniformity in film thickness and film quality can be produced. I can do it.

Two types of raw material gases are introduced into the reaction chamber, and a first raw material gas outlet and a second raw material gas outlet are formed on the blowing surface of a gas blowing mechanism section disposed on the front surface of the substrate. Since they are formed concentrically and a large number of them are provided, the uniformity of the thin film can be further improved.

A pipe for introducing the source gas connected to the gas blowing mechanism is further extended inside the gas blowing mechanism and is formed in a spiral shape so that the source gas is evenly supplied to the substrate. Therefore, the uniformity of the thickness of the thin film formed on the substrate is further improved.

By increasing the number of diffusion plates for each raw material gas provided in the gas blowing mechanism, sufficient rectification is achieved.
The effect of increasing uniformity in forming a thin film is exhibited.

Furthermore, since a temperature adjustment device is installed at a predetermined location in the gas blowing mechanism, the reaction state of each raw material gas can be optimized, increasing film-forming efficiency and film-forming speed. .

[Brief explanation of drawings]

FIG. 1 is a block diagram showing the overall configuration of a CVD apparatus according to the present invention, FIG. 2 is an enlarged vertical sectional view of the gas blowing mechanism section of the first embodiment, and FIG. 3 is a blowing surface of the upper surface of the gas blowing mechanism section. FIG. 4 is a vertical sectional view showing a second embodiment of the gas blowing mechanism section, FIG. 5 is a plan view showing the form of piping,
FIG. 6 is a characteristic diagram comparing the capabilities of the CVD apparatus according to the present invention and a conventional CVD apparatus, and FIGS. 7, 8, and 9 are longitudinal sections showing other embodiments of the gas blowing mechanism section according to the present invention. 10, 11, and 12 are configuration diagrams showing conventional CVD apparatuses. [Explanation of symbols] 1... Reaction chamber 2... Substrate 3... Substrate holder 5... Vacuum pump 6... Bubbler container 7 ...Liquid TEO3 9,12...-Mass 70-Controller 13.17...
Raw material gas supply piping 30... Gas blowing mechanism section 31 φ ・ ・ ・ 32 ・ φ ・ ・ 33 ・ ・ ・ 34 φ ・ ・ No. 35 φ ・ ・ ・ 35a ・ ・ ・ 36 ・ ・ ・ ・ 37 .38 ・ 40 ・ ・ ・ ・ 40a ・ φ 32A, 32 51 ・ ・ ・ ・ 52 ・ ・ ・ ・ 50 ・ ・ ・ ・ R1, R2・ Same cylindrical block, diffuser plate, gas blowing pipe part, cylindrical block・Diffusion plate, hole, gap, inlet, spiral piping, small hole B, 35A, 35B ・Diffusion plate, diffusion plate, waterway, heater, room diagram 1

Claims (5)

[Claims] (1) A reaction chamber with an airtight structure whose internal space is kept in a vacuum, a substrate installed in this reaction chamber on which a thin film is formed on the surface, and a temperature controller that holds this substrate and adjusts the temperature of the substrate. A CVD apparatus comprising a substrate holder equipped with a device, and a plurality of raw material introduction devices provided for introducing each of at least two types of raw material gases into the reaction chamber,
A gas blowing mechanism section is provided in the front space of the base body and has a raw material gas blowing surface facing the base body, and the gas blowing mechanism section is configured to blow the raw material gas introduced from each of the plurality of raw material gas introduction devices. 1. A CVD apparatus comprising separate chambers separated from each other for receiving the raw material gas, and a plurality of blowing holes dedicated to each raw material gas that communicate with each of the chambers are formed on the raw material gas blowing surface. (2) In the CVD apparatus according to claim 1, two types of the raw material gases are introduced into the gas blowing mechanism section, and a first blowing hole and a second blowing hole are provided on the raw material gas blowing surface of the gas blowing mechanism section. A CVD device characterized in that holes are formed concentrically. (3) In the CVD apparatus according to claim 1 or 2, a gas supply pipe for at least one type of the raw material gas is extended to the inside of the room of the gas blowing mechanism section, and the extended portion of the gas supply pipe is spirally arranged. A CV characterized in that it is formed in a shape and has a plurality of holes formed in its wall for releasing gas.
D device. (4) The CVD apparatus according to any one of claims 1 to 3, wherein the chamber dedicated to each raw material gas in the gas blowing mechanism section includes at least one diffusion plate. (5) The CVD apparatus according to any one of claims 1 to 4, wherein the gas blowing mechanism section is equipped with a temperature adjustment device.