KR101019766B1 - Plasma enhanced chemical vapor deposition apparatus, plasma enhanced chemical vapor deposition chamber and gas distribution showerhead assembly - Google Patents

Abstract

Apparatus and methods are described for supporting a substantially central portion of a gas distribution plate. One or more support members can connect and disconnect the diffuser to the mating connection without disrupting the flow of gas or gases through the diffuser and are designed to provide vertical suspension to the diffuser supported in the peripheral zone, or without a diffuser It is designed to support it. In one aspect, the at least one support member is part of a gas delivery conduit and in another embodiment a plurality of support members separated from the gas delivery conduit. One or more support members may modify the vertical lift, or vertical compression of the central region of the diffuser. Also described are methods and apparatus for controlling gas flow from a gas delivery conduit to a gas distribution plate.

Description

PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION APPARATUS, PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION CHAMBER AND GAS DISTRIBUTION SHOWERHEAD ASSEMBLY}

1 is a side view of a plasma chamber.

2 is a plan view of one embodiment of a chamber cover.

3 is a plan view of another embodiment of a chamber cover.

4 is a detailed view of one embodiment of a diffuser gravity support.

5 is an exploded view of another embodiment of the diffuser gravity support of FIG.

FIG. 6A is a detailed side view of an embodiment of a mating mechanism and a gas block regulator; FIG.

6B is a detailed view of one side of the coupling mechanism.

6C is a detailed view of another side of the coupling mechanism.

7 is a schematic representation of another embodiment of a diffuser gravity support.

8 is a partial schematic view of another embodiment of a diffuser gravity support.

9A is a plan view of an orifice ring.

9B is a side view of the orifice ring.

10A is a partial schematic view of another embodiment of a diffuser gravity support embodying an orifice ring.

10B is a partial schematic view of another embodiment of a diffuser gravity support embodying an orifice ring.

11A is a plan view of one embodiment of a backing plate.

11B is a plan view of another embodiment of a backing plate.

12 is a partial schematic view of another embodiment of a diffuser gravity support.

13 is a view of a temporary example of a pivot support.

14 is a detailed view of the diffuser connected to the pivot support.

15 is a detailed view of a pivot support connected to a backing plate.

16 is a detailed view of pivot support 1300 coupled to the diffuser.

17A is a plan view of one embodiment of a backing plate having a plurality of pivot supports connected to the backing plate.

17B is a plan view of another embodiment of a backing plate with a plurality of pivot supports.

17C is a top view of another embodiment of a backing plate having a plurality of pivot supports and a plurality of threaded supports.

18A is a cross sectional view of the diffuser with a concave horizontal profile.

18B is a cross-sectional view of the diffuser with a convex horizontal profile.

※ Explanation of reference numerals about the main parts of the drawing ※

 5: gas source 6: port

10: sidewall 11: bottom

12: substrate support 14: substrate

15: diffuser support 17: gas block

19: longitudinal bore 19a: angled bore

20: diffuser 21: large plenum

22: Orifice 23: Small Plenum

24: plasma source 25: grounding

28: backing plate 29: vacuum pump

34, 37, 41: dielectric spacer 45, 46: O-ring

50: support block 51: support sheet

57: flexible suspension 80: processing area

100: chamber

Embodiments of the present invention generally relate to supplying a gas or gases to a plasma chamber. More specifically, the present invention relates to providing a gas distribution plate in a chamber.

Flat panel displays are electronic devices of active matrix, such as insulators, semiconductors, and thin film transistors (TFTs), to make flat screens used in a variety of devices such as television monitors, personal digital assistants (PDAs), and computer screens. Use Generally, such flat panel displays are formed of two thin panels of glass, polymeric material, or other suitable substrate material. The layers of the matrix of liquid crystal material or metal contacts (contacts), the semiconductor active layer, and the dielectric layer are deposited through sequential steps and between two thin panels connected to each other to form a large area substrate having one or more flat panel displays. Is fitted. One or more panels include a conductive film that changes the orientation of the liquid crystal material to produce a patterned display on the screen surface and is connected to the power supply.

Such processes typically require a large area substrate that goes through a plurality of sequential process steps for depositing an active matrix material on the substrate. Chemical vapor deposition (CVD) and plasma enhanced chemical vapor deposition (PECVD) are part of the well known processes for such deposition. Such known processes are subjected to a large area substrate that is held in a constant position relative to the gas distribution plate, or diffuser, during deposition to ensure uniformity of the deposited layers, subject to temperatures between about 300 ° C. and 400 ° C. or higher. in need. The diffuser is generally formed with an area greater than or equal to the area of the substrate. If the diffuser is bent anyway during deposition, the process will not result in uniform deposition and may cause useless flat panel displays.

Flat panel displays have increased dramatically in size in recent years because they trade in acceptance of technology. Previous generation large area substrates were about 500 mm by 650 mm, while current generation substrates increased by about 1800 mm by 2000 mm or larger. This increase in substrate size has resulted in an increase in diffuser size to allow the substrate to be fully processed. Larger diffusers have required diffusers that can resist sagging when exposed to high temperatures during deposition.

A diffuser is generally a plate that is spaced apart from above a large area substrate with a plurality of openings for distributing the process gas or gases and typically has the same area as the substrate to be processed. The diffuser is generally formed of aluminum and expands and contracts while withstanding a CVD or PECVD process and is generally supported in the region around the edge to control the space between the diffuser and the substrate. However, this edge support design does not provide any support for the central portion, and may slack or creep with prolonged use due to gravity exacerbated by high temperature processing during the CVD or PECVD process.

Accordingly, what is needed is an improved method and apparatus for supporting a gas distribution plate, or diffuser, in a plasma chamber.

The present invention generally relates to a method and apparatus for supporting a gas distribution plate, or diffuser, in a plasma chamber. In one embodiment, the diffuser is suspended by at least one, internal or centrally located support member connected to the gas distribution plate and the wall of the chamber. The present invention is advantageous in preventing deformation of the diffuser in response to gravity acting on the diffuser while resisting the high temperatures generated during plasma enhanced chemical vapor deposition, and heat or pressure induced forces. One or more support members are connected between the backing plate and the diffuser in the chamber and can adjust the planar direction of the diffuser. One or more support members are configured to adjust the diffuser profile before or after evacuation of the chamber. In another embodiment, the one or more support members facilitate adjustment of the diffuser profile by adjustment of a plurality of screws connected to the one or more support members. The support can be attached to the diffuser without a compromise flow of gas or gases through the diffuser.

In one embodiment, the one or more supports are gravity supports. The support includes a gas inlet and provides a gas flow from the gas inlet to the plurality of orifices in the diffuser plate while also providing a vertical support to the diffuser. The support can also be disengaged from the diffuser via the coupling mechanism. In another embodiment, the orifice ring is formed to be connected to the support and provides a gas flow regulator to the diffuser.

In another embodiment, the gas distribution plate is supported in the chamber by a first plate in the chamber, the first plate having a central zone with one or more openings formed through the first plate. The second plate below the first plate, such as the gas distribution plate, has one or more joining portions in which one or more openings in the first plate are vertically aligned. One or more threaded supports engage with one or more engaging portions to support the gas distribution plate from the central region of the gas distribution plate. One or more threaded supports are connected between the diffuser and the backing plate. The backing plate is relatively thicker in cross-sectional area than the diffuser, providing a substantially fixed support. The diffuser is more malleable than the backing plate because of the holes and the relative thickness in the diffuser, and one or more allows adjustment of the diffuser profile by adjustment of the thread support.

In another embodiment, a method of changing the horizontal profile of a diffuser in a plasma chamber is described. The method includes supporting a diffuser with a coupling mechanism in the central region of the diffuser, engaging the support member to the engaging portion, and adjusting the support member to change the plane of the diffuser. In one aspect, the method allows adjustment before or after the vacuum is applied to the chamber. In one embodiment, the adjusting step includes changing the horizontal profile of the diffuser to have one or more of a horizontal profile, a concave horizontal profile, or a convex horizontal profile of one or more planes.

In another embodiment, the one or more supports are pivot supports. The pivot support includes a ball stud removably connected to the upper pivot member. The upper pivot member is connected to the backing plate in the chamber and the ball stud is detachably connected to the diffuser. The ball stud has a threaded portion extending through the upper pivot member and allows for horizontal profile adjustment of the diffuser by one or more nuts connected to the threaded portion.

In another embodiment, a method of depositing a thin film on a substrate is described. The method includes positioning a substrate on a substrate support in a process chamber below a gas distribution plate having an adjustable horizontal profile, flowing a process gas through a plurality of openings disposed in the gas distribution plate, gas distribution play Forming a plasma between the substrate and the substrate, and depositing a thin film on the substrate. The method further includes heating the process chamber at a temperature of about 350 ° C to about 450 ° C. In one embodiment, the horizontal profile of the gas distribution plate exhibits a concave shape. In another embodiment, the thin film is amorphous silicon. In other embodiments, the horizontal profile is adjusted using one or more support members and in other embodiments, the plurality of support members is used to adjust the horizontal profile.

In another embodiment, a method of adjusting the horizontal profile of a gas distribution plate comprises providing a gas distribution plate having a peripheral zone and a central zone of the plane, adjusting one or more support members connected to the central zone, the perimeter of the plane It includes the step of forming a horizontal profile in the central zone, which is one of a planar, concave, or convex profile relative to the zone. In one embodiment, the adjusting step is performed under vacuum.

In another embodiment, a method of adjusting a horizontal profile of a gas distribution plate includes providing a process chamber having a gas distribution plate between a backing plate and a process chamber, measuring a distance between the substrate support and the gas distribution plate, gas Adjusting one or more support members connected to the distribution plate and the backing plate, and forming a horizontal profile of the gas distribution plate, which is one of a planar, concave, or convex profile relative to the substrate support. . In one embodiment, the adjusting step includes rotating one or more support members. In another embodiment, the adjustment may be performed while the process chamber is under vacuum. In another embodiment, the one or more support members provide a process gas to the gas distribution plate.

BRIEF DESCRIPTION OF DRAWINGS To better understand the above-described features of the present invention, some examples are described in more detail with reference to the embodiments briefly summarized with reference to the embodiments shown in the accompanying drawings. It is to be noted, however, that the appended drawings illustrate only typical embodiments of the invention and, therefore, do not limit the scope of the invention, but that the invention may permit embodiments of other equal effects.

In general, embodiments of the present invention provide an apparatus and method for supporting a gas distribution plate in a processing chamber. In one embodiment, one or more support members are formed to support the gas distribution plate and facilitate resistance to central sag or warpage caused by gravity and high processing temperatures to maintain a desirable horizontal profile in the gas distribution plate. . The preferred horizontal profile may be at least one of the same height horizontal profile, convex horizontal profile, or concave horizontal profile. The horizontal profile as used herein, or the arrangement of the gas distribution plate or diffuser, relates to the cross-sectional area of the gas distribution plate as shown in the applicable figures. In all embodiments, the gas distribution plate has one or more support members connected to the central region of the gas distribution plate, and by adjusting the one or more support members, a horizontal profile in which the central region is one or more of a planar, concave, or convex profile. Furnace to adjust the gas distribution plate. To avoid confusion, common reference numerals refer to similar parts in the drawings, which may be duplicated in the drawings.

1 is a side view of a chamber 100 that may be suitable for a chemical vapor deposition (CVD) or plasma chemical vapor deposition (PECVD) process for fabricating a circuit of flat panel displays on a large area of glass, polymer, or other suitable substrate. to be. The chamber 100 is formed to form elements and structures on a large area substrate for use in the manufacture of liquid crystal displays (LCDs) or flat panel displays, or photovoltaic cells for solar cell arrays. The structure may be a plurality of back channel etched reverse staggered (bottom gate) thin film transistors that may include a plurality of sequential deposition and masking steps. Another structure may include a p-n junction to form a photovoltaic diode.

Chamber 100 may comprise a conductor material (eg, ITO, ZnO ₂ , W, Al, Cu, Ag, Au, Ru, or an alloy thereof), dielectric material (eg, SiO ₂ , SiO _x N _y , HfO ₂ , HfSiO ₄ , ZrO ₂ , ZrSiO ₄ , TiO ₂ , Ta ₂ O ₅ , Al ₂ O ₃ , derivatives or combinations thereof, semiconductor materials (eg, Si, Ge, SiGe, dopants thereof Or derivatives thereof, barrier materials (eg, SiN _x , SiO _x N _y , Ti, TiN _x , TiSi _x N _y , Ta, TaN _x , TaSi _x N _y or derivatives thereof) and attach / seed ) Materials are formed to deposit various materials on a large area substrate, including materials (eg, Cu, Al, W, Ti, Ta, Ag, Au, Ru, alloys thereof, and combinations thereof). Metal-containing compounds that can be deposited by chamber 100 include metals, metal oxides, metal nitrides, metal silicides, or combinations thereof. For example, the metal-containing compound may contain tungsten, copper, aluminum, silver, gold, chromium, cadmium, tellurium, molybdenum, indium, tin, zinc, tantalum, titanium, hafnium, ruthenium, alloys thereof, or combinations thereof. Include. Specific examples of conductive metal-containing compounds formed or deposited by chamber 100 on large area substrates, such as gate electrodes and other conductive layers, include indium tin oxide, zinc oxide, tungsten, copper, aluminum, silver, derivatives thereof Or combinations thereof. The chamber 100 is also formed to deposit dielectric and semiconductor materials that are in a polycrystalline, amorphous or epitaxial state. For example, dielectric materials and semiconductor materials may include silicon, germanium, carbon, oxides thereof, nitrides thereof, dopants thereof, or combinations thereof. Specific examples of dielectric materials and semiconductor materials formed or deposited by the chamber 100 on a large area substrate include epitaxial silicon, polycrystalline silicon, amorphous silicon, silicon germanium, germanium, silicon dioxide, silicon oxynitride, silicon nitride, and dopants thereof. (Eg, B, P or As), derivatives thereof or combinations thereof. Chamber 100 may also be argon, hydrogen, nitrogen, helium, or for use as a purge gas or carrier gas (eg, Ar, H ₂ , N ₂ , He, derivatives thereof, or a combination thereof). It is formed to receive a gas such as a combination thereof. An example of depositing an amorphous silicon thin film on a large area substrate using the chamber 100 can be accomplished by using silane as the precursor gas in the hydrogen carrier gas.

Examples of various apparatuses and methods for depositing thin films on large area substrates using chamber 100 are referred to within the scope of the present disclosure and are not contradicted herein by " Plasma Uniformity Control By Gas Diffusion Curvature. Gas Diffuser Curvature, "US Patent Application No. 11 / 173,210, filed Jul. 1, 2005. Other examples of various devices that can be formed using the chamber 100 include "Controlling the Properties and Uniformity of Silicon Nitride Film by Controlling the Film Forming. US Patent No. 10 / 829,016, filed April 20, 2004, entitled "Plasma Uniformity Control By Gas Diffuser Hole Design," filed April 20, 2004. US Patent No. 10 / 889,683, filed May 12, both of which are incorporated to the extent that they do not contradict this specification.

The chamber 100 consists of a substrate support 12, such as a susceptor supporting the chamber sidewall 10, the bottom 11, and the large area substrate 14. The chamber 100 also has a port 6, such as a silt valve, which facilitates delivery of a large area substrate by selectively opening and closing. The chamber 100 also surrounds a gas inlet manifold, for example diffuser 20, consisting of a cover plate 16, a first plate such as a backing plate 28, and a second plate such as a gas distribution plate. A lid with an exhaust channel 18. Diffuser 20 may be any substantially flat solid that provides a plurality of passages for process gas or gases from gas source 5 connected to chamber 100. The diffuser 20 is positioned above the substrate and suspended vertically by one or more support members, which in the embodiment are diffuser supports 15. In an embodiment, the diffuser 20 is also supported from the upper lip 55 of the exhaust channel 18 by a flexible suspension 57. The flexible suspension is described in detail in US Patent No. 6,477,980, filed November 12, 2002, entitled "Flexibly Suspended Gas Distribution Manifold for A Plasma Chamber". Reference is made to the extent not inconsistent with the specification. The flexible suspension 57 supports the diffuser 20 from the edge of the diffuser and causes the diffuser to expand and contract. Other edge suspensions of the diffuser 20 may be used with the diffuser support 15, and the diffuser support 15 may be used without edge suspension. For example, the diffuser 20 may be supported in the peripheral region of the diffuser with a flexible support or may not be supported at the edges. The diffuser support 15 may be connected to a gas source 5 which supplies a process gas to a gas block 17 mounted on the support 15. The gas block 17 is connected to the diffuser 20 via a longitudinal bore 19 in the support 15 and supplies process gas to the plurality of orifices 22 in the diffuser 20. Examples of diffusers that may be used within chamber 100 are incorporated herein by reference in their entirety, filed Jul. 1, 2005 under the name "Plasma Uniformity Control By Gas Diffuser Curvature". US patent application Ser. No. 11 / 173,210.

The diffuser support 15 is substantially a symmetrical body connected to the backing plate 28. The backing plate 28 is substantially a flat plate with a suitable bore through the central zone for receiving the diffuser support 15 and is supported above the peripheral zone of the channel by the discharge channel 18. The backing plate 28 is hermetically sealed by suitable O-rings 45 and 46 at the point where the backing plate 28 and the outlet channel 18 join, thereby allowing the interior of the chamber 100 to escape from the surrounding environment. It can protect and prevent the leakage of process gas. The diffuser support 15 extends upwardly from the backing plate 28 through a suitable bore in the cover plate 16. In this embodiment, the support 15 to which the diffuser 20 is attached is provided with a large area substrate 14 and substrate while the substrate support 12 raises and lowers the substrate 14 from and at the transfer and processing position. It remains substantially fixed in position above the support 12.

During operation, process gas flows from the gas source 5 while the chamber 100 is pumped down to a suitable pressure by the vacuum pump 29. One or more process gases travel through gas block 17, longitudinal bore 19, angled bore 19a, and a large plenum 21 generated between backing plate 28 and diffuser 20. Is deposited in a small plenum 23 in the diffuser 20. One or more process gases are then passed through a plurality of orifices 22 in the diffuser 20 to create a processing region 80 within the range below the diffuser 20. Move from In operation, a large area substrate 14 rises to the processing region 80 and a plasma excited gas or gases are deposited over the substrate to form a structure over the large area substrate 14. The plasma may be formed in the processing region 80 by a plasma source 24 connected to the chamber 100. The plasma source 24 may be a direct current power source, a radio frequency (RF) power source, or a remote plasma source. The RF power source can be inductively or capacitively coupled to the chamber 100. The plasma may be formed in the chamber 100 by other means such as heat induced plasma. Although the plasma source 24 is shown connected to the support 15, the plasma source 24 may be connected to other portions of the chamber 100.

The diffuser 20 may be coated or formed with an electrically conductive material and connected to the plasma source 24 to function as an electrode in the chamber 100 and the substrate support 12 may be connected to ground 25 and likewise It can function as an electrode in the chamber 100. Materials selected for the diffuser 20 may include steel, titanium, aluminum, or combinations thereof and the surface may be polished or anodized. The substrate support 12 may also be heated by an integral heater, such as a heating coil or resistance heater, disposed or connected within the substrate support 12. Diffuser 20 may be formed of one or more interconnected components and may deliver process gas and may be separated from chamber discharge channel 18 and wall 10 by dielectric spacers 34, 35, 37, 38, and 41. Is electrically insulated.

2 is a plan view of the cover plate 16 showing the relative placement of the diffuser support 15, which is located in the central region of the cover plate 16. The central zone 210 may provide a support point for the diffuser 20, or the peripheral zone of the diffuser 20, the backing plate 28, and the cover plate 16, which may change the horizontal profile of the diffuser 20. It is formed as an arbitrary position within. Also shown is a longitudinal bore 19, surrounded by an annular collar 53, through a gas block 17. The diffuser support 15 may be used alone as the diffuser support in the central region of the cover plate 16 and the gas or gases may be supplied to the diffuser 20 at other locations in the chamber 100. Diffuser 20 and backing plate 28, not shown in the figure, are typically located under cover plate 16. The diffuser 20 and the backing plate 28 have substantially the same width as the width of the cover plate 16. Diffuser 20 and backing plate 28 have a corresponding central zone 210 that may allow any of the components shown in FIG. 2 to engage diffuser 20 and backing plate 28. In addition, the components shown in FIG. 2 may extend through or engage with the backing plate 28.

3 is a top view of another embodiment of cover plate 16 showing an alternative location of diffuser support 15 in central zone 210. As in FIG. 2, diffuser 20 and backing plate 28 are not shown in this figure, but are typically located under cover plate 16. The diffuser 20 and the backing plate 28 have substantially the same width as the width of the cover plate 16. Diffuser 20 and backing plate 28 have a corresponding central zone 210 that allows any of the components shown in FIG. 3 to engage diffuser 20 and backing plate 28. Additionally, the components shown in FIG. 3 may extend through or engage with the backing plate 28. The diffuser support 15 is shown off-center in the cover plate 16 but is still in the central zone 210. The central zone 210 can be any central location zone (and backing plate and corresponding location in the diffuser) of the cover plate 16, which is determined as the support point of the diffuser 20. The gas passage 300 is shown above the cover plate 16 as an alternative to the process gas provided by the diffuser support 15 to the diffuser.

4 is a diffuser 20 suitably connected to the backing plate 28 and is supported by a diffuser support 15, surrounded by a symmetrical support sheet 51 and comprising a longitudinal support block 50. A detailed view of the diffuser support, showing The longitudinal support block 50 is formed of a material that is selected for the strength and resistance of the block in processing the chemical action and is joined to and supported by the symmetrical support sheet 51. Materials for the longitudinal support block 50 include steel, titanium, aluminum, or combinations thereof.

5 is an exploded view of the diffuser support 15 with the longitudinal support block 50 disposed in the symmetrical support sheet 51. The seat 51 is disposed through a suitable bore in the backing plate 28 and connected by a weld 52 or other method known in the art. The support block 50 is closed by suitable O-rings 4, 8 which are arranged against the inner wall of the support sheet 51. The outer diameter of the upper portion 56 of the support block 50 is equal to or smaller than the inner diameter of the upper region surface 66. A groove suitable for placing the O-rings 4, 8 is disposed within the outer diameter of the top 56. These O-rings 4, 8 are formed to seal the chamber 100, thereby preventing the ambient atmosphere from entering the chamber 100 and preventing the process gas from leaking out of the chamber 100. The longitudinal block 50 extends upwardly through a suitable bore in the cover plate 16, as shown in FIGS. 2 and 3. The cover plate 16 is hermetically connected to the support plate 51 symmetrically with the cover plate 16 to support the annular collar 53. The plurality of screws 1, 3 join the support block 50 and the support sheet 51 and will be described in detail below.

5 and 6a, the plurality of screws 1, 3 are shown in a plan view of the longitudinal block 50, supporting and supporting the support block 50 to the support sheet 51 connected to the diffuser 20. It acts to bind. The longitudinal support block 50 has a symmetrical flange portion 57 having a diameter larger than the central portion 58 of the support block 50. The flange portion 57 acts as a stop and limit for the support 15 by preventing vertical movement when a contact is formed between the flange 57 and the support sheet 51. The flange portion 57 also acts as an adjustment mechanism by providing a mating connection for the plurality of jacking screws through a suitable female threading in the selected position of the flange 57. The plurality of suitably spaced separating bores in the flange 57 provide a mechanical connection for the plurality of locking screws 3 that are suitably mechanically connected to the threaded holes disposed in the upper region 66 of the seat 51. . While four jacking screws 1 and four locking screws 3 are shown, the present invention does not limit the number of these screws and does not limit the number of screws to provide the desired adjustment and to support the diffuser 20. It is available. The support 15 is connected between the diffuser 20 and the backing plate 28. The backing plate 28 is relatively thicker in cross section than the diffuser 20 and thus provides a substantially fixed support point. The diffuser 20 typically has greater malleability than the backing plate 28 because of the relative thickness and holes in the diffuser 20. This relative malleability allows the spreader profile to be adjusted by adjusting the flange portion 57 of the support 15.

In operation, the longitudinal block 50 is inserted into the symmetrical support sheet 51 and the diffuser 20 is connected to the support block 50 via a mating connection 60 which will be described in detail below. At this time, the diffuser is suspended by the diffuser support 15 (shown in FIG. 1), and the flexible suspension 57. The diffuser support 15 is adjusted vertically through a plurality of jacking screws 1 to allow the diffuser 20 to be adjusted to exhibit a desired horizontal profile, which may be one or more of a planar, concave, or convex profile. In one embodiment, the preferred horizontal profile of the diffuser 20 is different from the horizontal profile of the substrate support 12. In other embodiments, the preferred horizontal profile is similar to the horizontal profile of the substrate support 12. If the substrate support 12 is bent or somewhat higher in the center than the peripheral zone (or if it is bent or somewhat higher than the center), the diffuser 20 is adapted to substantially match the horizontal profile of the substrate support 12. It can be adjusted to provide a processing region 80 between the substrate 14 and the diffuser 20, which is substantially the same in any respect. Alternatively, the diffuser 20 may be adjusted to a horizontal profile determined by a process or user that is different from the horizontal profile of the substrate support 12 and the processing area 80 between the diffuser 20 and the substrate 14. Are not identical at any point. Alternatively, the horizontal profile of the diffuser 20 can be selected regardless of the horizontal profile of the substrate support 12.

If the diffuser 20 is stretched at any point of the central zone and the horizontal profile of the plane is desired as the profile of the diffuser 20, then the jacking screw 1 connected with the upper zone 61 of the support sheet 51 is thus It can be adjusted to raise the central portion of the diffuser 20 to mitigate any central sag caused by gravity and vacuum. If the preferred horizontal profile of the diffuser 20 is a convex horizontal profile, the diffuser 20 can be suitably adjusted by the jacking screw 1 to raise the central portion of the diffuser 20 as necessary. If the preferred horizontal profile of the diffuser 20 is a concave horizontal profile, the jacking screw 1 can be raised by suitable rotation, and the plurality of locking screws 3 suitably arranged with the threaded holes in the support sheet 51. Rotates suitably with respect to the flange 57 to modify the compression effect on the diffuser 20, and the central portion of the diffuser 20 can exert a force to go to a low position or to a low position, so that the diffuser 20 ) Can result in a concave horizontal profile. Alternatively, the diffuser 20 may not require vertical adjustment and the locking screw 3 may be adjusted to secure the diffuser in this position.

If the preferred orientation of the diffuser 20 is adjusted and the diffuser 20 is present in the desired horizontal profile, the locking or jam nut 2 is suitably rotated to lock the jacking screw 1 and, therefore, the diffuser Prevents subsequent movement of the jacking screw 1 that can move the 20. The plurality of locking screws 3 are suitably tightened to prevent any subsequent movement of any part with respect to the support 15. If a concave direction is desired for the diffuser 20, as described above, the jacking screw 1 can be rotated to tighten, and the jam nut 2 can be any subsequent movement of any part associated with the support 15. It is used to prevent. In other words, if the concave direction of the diffuser 20 is desired, the locking screw 3 acts as an adjusting device while the jacking screw 1 and each jam nut 2 act as a locking mechanism.

While the process described above is performed in an ambient environment, the adjustments made to the horizontal profile of the diffuser 20 through the process described above may be any of the substrate support 12, the backing plate 28, or the diffuser 20. It may be performed after the vacuum applied to the chamber 100 to adjust the diffuser 20 to cancel the pressure induced deformation of the. Any pressure induced deformation can be determined and the desired horizontal profile of the diffuser 20 can be created. All openings in the chamber 100 that are not used for vacuum purposes can be closed during the process and the O-rings 4 and 8 provide a suitable seal while allowing the longitudinal support block 50 to move. In an atmospheric environment or under vacuum, the relative distance and adjustment parameters between the substrate support 12 and the diffuser 20 can be determined by a measuring device, such as one or more gauges, when adjusting the horizontal profile of the diffuser.

5 and 6B-6C show one embodiment of the mating connection 60 and are shown as a configuration of slots and keys. The longitudinal support block 50 is connected to the diffuser 20 by a mating connection 60 at the position below and around the backing plate 28. In one embodiment, the diffuser 20 can be manufactured or modified to include a female connector 31 such as a plurality of symmetrical slots, while the support block 50 is a male connector such as a plurality of symmetrical keys. It is made to include (32). The female connector 31 is included in the diffuser 20 and the male connector 32 is integrated in the support block 50. Although four female connectors 31 and four male connectors 32 are shown in the exemplary figures, it should be contemplated that more or fewer may be used. Alternatively, the male connector 32 may be a threaded member suitable for mating with a female thread in the diffuser 20, thereby creating a mating connection 60 through screwing.

FIG. 6B is a plan view of the coupling connection 60 showing b-b of FIG. 5. At the lower end 59 of the longitudinal support block 50, the longitudinal bore 19 and the angled bore 19a, with a plurality of male connectors 32 in the region between the angled bores 19a. Is shown in detail. The diffuser 20 includes an orifice 22, a plurality of extended portions 61 suitable for supporting the male connector 32, and a cut-out section through which the male connector 32 passes. It is shown at 62.

In FIG. 5, the male connector 32 measured in the radial direction has an outer diameter smaller than the outer diameter of the flange 57, and has an outer diameter smaller than or equal to the inner diameter of the shoulder region 65 of the support sheet 51. The upper zone surface 66 of the support sheet 51 has an inner diameter that is greater than the inner diameter of the shoulder zone 65. The lower end 59 of the support block 50 has an outer diameter smaller than the outer diameter of the male connector 32 and has an outer diameter smaller than the central portion 58. The upper end 56 of the support block 50 has an outer diameter smaller than the flange 57 and an outer diameter larger than the central portion 58. The diameter scheme is that the support block 50 has two mechanical stops; Ie one in the shoulder region 65 of the support sheet 51, the other in the flange 57 and the upper region 66 of the support sheet 51.

The engagement connection 60 shown in FIG. 6B is shown in an unlocked position to indicate the relative position of the angled bore 19a. Prior to the detailed locking down procedure and adjustment, the support block 50 is inserted into the support sheet 51, and the male connector 32 is in the region between the extending portions 61, which is part of the diffuser 20. It is inserted into the cut-out section 62. The support block 50 rotates 45 ° to the locked position, as shown in FIG. 6C. The cut-out section 62 is maintained in the diffuser 20, while the male connector 32 is disposed just below the extended position 61. The cut-out section 62 is an angled bore 19a, which can provide a large plenum 21 and a small plenum 23 with a substantially layered flow of gases from the longitudinal bore 19. Create a void such as channel 501 that is substantially aligned with. Process gas is dispersed through a plurality of orifices 22 in the diffuser 20 during processing. It should be noted that the orifice 22 is continuous in the area in the diffuser 20 occupied by the support 15 to provide a rigid flow of gas or gases through the diffuser 20.

7 is a schematic diagram of another embodiment of a diffuser support 15. A bore 19b and a longitudinal support block 50 are shown extending from the longitudinal bore 19, which are connected to the small plenum 23. An elongated bore 19b may optionally be added to provide a larger volume of process gas to the small plenum 23, so that the processing region (through a plurality of orifices 22 below the longitudinal support block 50) Increase the flow and volume of the process gas.

8 is another embodiment of a diffuser support 15. In an embodiment, the longitudinal support block 50 has a longitudinal bore 19 that intersects the transverse bore 19c. The longitudinal support block 50 has an annular void 33 in the bottom portion 59 to widen the area of the small plenum 23 in the diffuser 20. Also shown is a backing plate 28 having a perimeter chamber 27 on the lower end of the backing plate to increase the surface area of the large plenum 21.

9A is a top view of orifice ring 800. In an embodiment, orifice ring 800 consists of at least two components, such as first curved member 810 and second curved member 820. The first curved member has one or more cavities 840 to receive the axis of the screw 830. The screw 830 may have a threaded portion that may be received by the threaded cavity 850 in the second curved member 820. As another example, an orifice ring 800 of two or more components or one component that is suitably engaged or installed in a chamber may be considered.

FIG. 9B is a side view of the orifice ring 800 shown in FIG. 9A. Orifice ring 800 has an outer diameter 804, a first inner diameter 806, and a second inner diameter 808. The first inner diameter 806 is formed to surround the outer diameter of the lower end 59 of the longitudinal support block 50. The second inner diameter 808 may be larger than the first inner diameter 806, and each inner diameter may be separated by the annular bevel 870. Also shown is a plurality of orifice ring holes 860 around the periphery of the orifice ring 800 below the annular bevel 870.

FIG. 10A is a detailed view of the diffuser support 15 incorporating an orifice ring 800, similar to the embodiment shown in FIG. 8. The orifice ring 800 has a first curved member 810 and a second curved member 820 that surround the lower end 59 of the longitudinal support block 50. Each curved member has, in one embodiment, a plurality of orifice ring holes 860 around its outer diameter, substantially aligned with the plurality of transverse bores 19c. Orifice ring 800 provides a tuning aspect for the flow of process gas or gases from longitudinal bore 19 to processing region 80. By varying the diameter of the hole 860, gas flow can be limited in the diameter of the hole 860. Additionally or alternatively, gas flow can be limited by changing the alignment of the hole 860 and the transverse bore 19c.

For example, as the gas flows through the diffuser support 15, the gas can move through the longitudinal bore 19 to a plurality of transverse bores 19c that are virtually unlimited. The plurality of orifice holes 860 may have a diameter smaller than the diameter of the plurality of transverse bores 19c. Gas flow from the cross bore 19c may be restricted by the orifice ring hole 860 and a portion of the gas may be caused to flow into the interstitial space 910. Gas in the gap space 910 can move downward through the channel 501 and into the annular void 33 to compensate for gas flow from the small plenum 23 through the orifice hole 22. Any flow that is not blocked by the orifice ring 800 may move through the orifice ring hole 860 to the large plenum 21. The orifice ring 800 may be positioned at a position through which the portion of the gas flow may affect the surrounding chamfer 27 through the orifice ring hole 860, redirecting the gas or portions of the gases downward. In the present invention, it is also contemplated that the orifice ring 800 does not form the clearance space 910, for example, the orifice ring may be manufactured with only one inner diameter. Alternatively, or in addition, the bottom portion 59 of the longitudinal support block 50 may include a bore 19b extending to provide a flow path for the gas or gases with a small plenum 23. . As discussed above, orifice ring 800 may be manufactured, positioned, and adjusted according to the gas flow rate and volume determined by the user.

FIG. 10B is a detailed view of the diffuser support 15 similar to the embodiment shown in FIG. 4, embodying an orifice ring 800. The orifice ring 800 has a first curved member 810 and a second curved member 820 that surround the lower end 59 of the longitudinal support block 50. Each curved member has, in one embodiment, a plurality of orifice ring holes 860 around its outer diameter such that it is substantially aligned with the plurality of transverse bores 19c. As another example, the orifice ring hole 860 may not be completely aligned with the transverse bore 19c. In this embodiment, the orifice ring 800 can be rotated to further restrict gas flow from the transverse bore 19c to the large plenum 21.

11A is a plan view of another embodiment of a support member for supporting a gas distribution plate in a chamber. The backing plate 28 is shown with a plurality of bores 1063 formed through the central zone 1010. Each of the plurality of bores 1063 receives a threaded support 1020, such as a bolt, and is formed to engage a corresponding engaging portion in the diffuser 20. Diffuser 20, not shown in this figure, is typically located under backing plate 28. The diffuser 20 has an area substantially the same as that of the backing plate. The diffuser 20 has a corresponding central zone 1010 in which any component shown in FIG. 11A is formed to engage the diffuser 20. Although twelve bores of symmetrical patterns are shown in this embodiment, a plurality of bores 1063 can be formed in any pattern, number, and size in the backing plate 28. An opening 1048 in the backing plate 28 is also shown to receive the gas delivery system 1050 to supply process gas or gases to the diffuser 20. The diffuser may have a suitable bond point formed to receive the gas delivery system 1050.

11B is a top view of another embodiment of a diffuser support for supporting a gas distribution plate in the chamber. This embodiment is similar to the embodiment shown in FIG. 11A except for the threaded support 1020 pattern and the off-center placement of the opening 1048. As in FIG. 11A, diffuser 20 is not shown, but is typically located under backing plate 28. The diffuser 20 has an area substantially the same as that of the backing plate 28. The diffuser 20 has a corresponding central zone 1010 that can allow any of the components shown in FIG. 11B to engage with the diffuser 20.

12 is a partial schematic side view of the diffuser 20 in the chamber 100. The chamber has a cover plate 16 with one or more openings 1048 in the central zone to receive the gas delivery assembly 1050. Gas delivery assembly 1050 is configured to receive a process gas or gases from gas source 5 and is configured to deliver process gas through bore 1019 to large plenum 21. The process gas may then move to the processing region 80 through the plurality of orifices 22 in the diffuser 20. In another embodiment, the diffuser 20 is configured to connect the plasma in the processing region 80 to the plasma source 24.

Chamber 100 has a plurality of threaded supports 1020, such as bolts, that extend through a first plate, such as backing plate 28, and extend to a second plate, such as diffuser 20. Gas delivery assembly 1050 may be integral with backing plate 28, or backing plate 28 may direct gas delivery assembly 1050 through bore-through 1070 in backing plate 28. I can accept it. Threaded support 1020 may be made of a material that exhibits high tension and is resistant to process chemistries such as stainless steel, titanium, aluminum, or combinations thereof. Threaded support 1020 may be formed of any of the materials described above and may be further coated with a process resistance coating such as aluminum. The backing plate 28 has a plurality of openings 1030 formed through the central zone. Each threaded support 1020 is threaded and a portion of the thread is to be received by an engagement portion, such as a female thread 1040 in the diffuser 20, which coincides with a plurality of openings 1030 in the backing plate 28. Can be. The female thread is disposed in a suitable bore that does not interfere with the plurality of orifices 22 in the diffuser plate 20. Also shown is a cap plate 1065 covering the tubular bulkhead 1063 and each tubular bulkhead 1063. The cap plate 1065 has access to the threaded support 1020 and together with the tubular partition 1063 provides a seal from the surrounding environment. The cap plate 1065 may be sealed by any known method, such as a clamp ring 1066 covering the cap plate 1065, and an O ring between them on the cover plate 16 by screws 1068. 1062). It should be noted that the gas delivery assembly 1050 of this embodiment will be fixed in position within the chamber 100 and is sealed from the ambient atmosphere by any known method.

In operation, the threaded support 1020 is inserted into the tubular bulkhead 1063, through the opening 1030, and engages with each female thread 1040 in the diffuser 20. The threaded support 1020 rotates to be adjusted in the planar direction of the diffuser 20. In an embodiment, the central zone of the diffuser 20 is limited within the vertical movement by the backing plate 28 and is designed to exhibit greater resistance to forces such as gravity, vacuum, and heat. The backing plate 28 can cause this force, but not to the extent that it can be produced by the diffuser 20. In this manner, the diffuser 20 may exhibit deformations that may be caused by the forces described above, but the deformations may be hindered by the backing plate 28. It should also be noted that the force parameters can already be determined and any known strain and diffuser 20 in the backing plate 28 can be hindered by the adjustment of the threaded support 1020. The diffuser 20 can be adjusted to allow partial deformation, but the allowed deformation is allowed when the threaded support 1020 reaches a mechanical limit, such as in contact with a stop, which is a washer 1052 in this example. Stopped at the point. Threaded support 1020 is connected between diffuser 20 and backing plate 28. The backing plate 28 is relatively thicker in cross-sectional area than the diffuser 20, providing a substantially fixed support point. The diffuser 20 is more malleable than the backing plate 28 because of the relative thickness and holes in the diffuser 20 that allow adjustment of the diffuser profile by adjusting the length of the threaded support 1020.

In another aspect, one or more adjustment members 1032, such as spacers, may be used to maintain a fixed distance between the diffuser 20 and the backing plate 28 to screw the adjustment member 1032 in place. Expression support 1020 is used. In this embodiment, the diffuser 20 may be formed to exhibit a desired horizontal profile by varying the thickness of one or more regulating members 1032. The one or more adjusting members 1032 may be thick to form a convex horizontal profile in the central portion of the diffuser 20 when installed, or may be thin to form a concave horizontal profile. The thread support 1020 can be rotated with the female thread 1040 to lock the adjustment member 1032 in place. Although only one adjustment member 1032 is shown, the present invention is not so limited, and any number of adjustment members 1032 may be used, for example, each thread support 1020 is connected to the thread support. It has an adjustment member. When the adjusting member 1032 is used, the vertical movement of the diffuser 20 is not limited to any movement of the backing plate 28 when responding to forces such as heat, pressure, and gravity.

13 is another embodiment in which the support member for supporting the gas distribution plate is a pivot support 1300. The pivot support 1300 may be used alone or in combination with the diffuser support 15. The pivot support 1300 may be used alone or in combination with the thread support 1020. In this embodiment the pivot support 1300 is located outward from the diffuser support 15 and is connected to the diffuser 20 and the backing plate 28. Pivot support 1300 includes a ball stud 1302 connected to a ball stud housing 1304 connected to diffuser 20 and an upper pivot member 1306 connected to backing plate 28. The ball stud 1302 is an elongate member connected on one end of the lower pivot member 1308 and has a threaded portion 1310 on the opposite end. The ball stud 1302 may be machined as a component with the lower pivot member 1308, or may be a bolt or screw that is threaded or otherwise connected to the lower pivot member 1308. The upper pivot member 1306 is engaged with the support sheet 1332 formed in the upper surface of the backing plate 28. The sealing block 1324 is connected within the top surface of the backing plate 28 to receive the upper portion of the upper pivot member 1306 and to facilitate sealing inside the chamber from the surrounding environment. The cover cup 1326 is connected to the upper surface of the backing plate 28 to cover the exposed portion of the pivot support 1300, further sealing the interior of the chamber. To receive the pivot support 1300, the backing plate 28 is formed so as not to obstruct the movement of the first bore 1328 and the ball stud 1302 and the ball stud housing 1304 under the support sheet 1322. It has an extending bore 1330.

The lower pivot member 1308 is generally spherical solid and the upper pivot member is also spherical in shape with a central bore 1320 to receive the ball studs 1302. Lower pivot member 1308 and upper pivot member 1306 are formed of a material that exhibits mechanical strength with minimal reactivity to process chemistry. The ball stud 1302 may be formed of the same material as the materials for the lower pivot member 1308 and the upper pivot member 1306. The material for the ball stud 1302, the upper pivot member 1306, or the lower pivot member 1308 includes stainless steel, titanium, or aluminum, and combinations thereof. If the long portion of the ball stud 1302 is formed of a material that exhibits some reaction to process chemistry, the tubular shield 1332 may be formed of aluminum, which may be connected to the ball stud 1302.

The lower pivot member 1308 is connected to the ball stud housing 1304 and the ball stud housing 1304 is connected to the diffuser 20 by a connection mechanism 1312. The ball stud housing 1304 has a lower seat 1314 connected to the seat housing 1316 to receive the lower pivot member 1308. The coupling mechanism 1312 of this embodiment is similar in design and function to the coupling coupling portion 60 shown in FIGS. 5 and 6b to 6c except that it is reduced in proportion. The seat housing 1316 has a plurality of male connectors 1318 that selectively engage a plurality of slots (not shown) formed in the diffuser 20. Diffuser 20 has a plenum 1323 that facilitates process gas flow through a plurality of orifices 22 formed below pivot support 1300 from large plenum 21 to processing region 80.

14 is a detailed view of diffuser 20 connected to pivot support 1300. As shown, prior to connection of the diffuser 20, the operator may assemble the ball stud housing 1304 away from the backing plate 28 and the diffuser 20. To facilitate assembly, diffuser 20 and backing plate 28 may be removed from the chamber and positioned for assembly. The ball stud 1302 may be connected to the seat housing 1316 by inserting a long portion of the ball stud 1302 into a conical opening 1408 formed in the seat housing 1316. In order to receive the lower pivot member 1308, the lower sheet 1314 is inserted through a passage 1404 formed in the lower surface of the seat housing 1316. Lower seat 1314 and seat housing 1316 are formed to engage by threaded connections 1402. The seat housing 316 may have a female thread and the lower sheet 1314 may have a male thread. The passage 1404 is dimensioned such that the lower sheet 1314 passes through the passage and the threads engage. The lower sheet 1314 can be suitably rotated until the upper portion of the lower sheet contacts the shoulder 1406 formed in the seat housing 1316. Each of the seat housing 1316 and the lower seat 1314 has an interior surface that is configured to receive and position the lower pivot member 1308 while facilitating pivotal movement of the ball stud 1302.

When the shoulder 1406 is contacted by the bottom sheet 1314, the pin 1410 may be used to prevent the bottom sheet from falling off the shoulder 1406. When all ball studs 1302 are connected to the ball stud housing 1304, each ball stud housing 1304 may be inserted into a slot formed in the diffuser 20 to engage the male connector 1318. The ball stud housing 1304 can be secured by a set screw 1412 that is rotated 45 ° and inserted into a channel 1414 formed in the seat housing 1316. Channel 1414 has a threaded bottom and engages a thread on set screw 1412. The set screw 1412 is suitably rotated to contact a shoulder formed in the channel 1414. The set screw 1412 is formed to extend beyond the channel 1414 of the threaded portion and the extended portion engages with the recess 1416 formed in the diffuser 20, which also prevents rotation of the ball stud housing 1304. . When all ball stud housings 1304 are connected to the diffuser 20 and locked by a set screw 1412, the diffuser 20 can also be handled for the assembly and the ball stud housing 1304 can remain intact. .

15 is a detailed view of the pivot support 1300 connected to the backing plate 28. After installation of the ball stud housing 1304 with the ball studs 1302, the diffuser 20 can be connected to the backing plate 28. In this example, the backing plate 28 is located upside down outside the chamber, and the diffuser 20 with one or more ball studs 1302 connected thereto is located upside down on the backing plate 28. The diffuser 20 in this position allows the threaded portion 1310 of the ball stud 1302 to be suspended downward and the operator extending the bore 1330 and the first bore 1328 until the threaded portion 1310 is exposed. The ball stud 1302 can be inserted therein and protrudes through a support sheet 1332 formed in the backing plate 28. Upper pivot member 1306 may be installed by guiding threaded portion 1310 through center bore 130. When the threaded portion 1310 protrudes through the center bore 1320, the nut 1516 may be connected to the threaded portion 1310 to secure the upper pivot member 1306 to the ball stud 1302. In another embodiment, the central bore 1320 of the upper pivot member 1306 may comprise a female thread and the threaded portion 1310 of the ball stud 1302 may be connected to the upper pivot member by threaded connections.

In one embodiment, the upper portion 1506 of the ball stud 1302 has a reduced diameter portion 1504. The central bore 1320 of the upper pivot member 1306 has a reduced diameter portion that facilitates vertical movement in the central bore 1320 until the upper portion contacts the shoulder region 1508 formed in the upper pivot member 1306. 1504 and a portion for receiving the upper portion 1506. The shoulder zone 1508 functions as a vertical limit for the ball stud 1302 to stop any vertical movement of the ball stud 1302 during adjustment when the upper portion 1506 contacts the shoulder zone 1508. do. The upper pivot member 1306 forms a vacuum tight seal between the ball stud 1302 and the upper pivot member 1306 and is disposed in a recess formed in the upper pivot member 1306 to prevent leakage of process gas from the chamber. It also includes one or more o-rings 1510. The pivot support 1300 also includes an O-ring 1512 disposed in a recess formed in the backing plate 28 and for vacuum sealing and process gas loss between the upper pivot member 1306 and the backing plate 28. Facilitates prevention. O-rings 1510 and 1512 may be formed of a suitable material, such as a polymeric or rubber material, to withstand the process conditions.

With a plurality of upper pivot members 1306 connected to each ball stud 1302 by a nut 1516, the diffuser 20 and the backing plate 28 are connected to each other by a plurality of pivot supports 1300. . Diffuser 20 and backing plate 28 may be located on the upper right in the diffuser and backing plate position that may be taken when installed into the chamber. At this point, the diffuser support 15 can be inserted into the support sheet 51 (FIG. 5) to be connected to the diffuser 20 and can be rotated suitably. Alternatively, diffuser 20 may use gas delivery assembly 1050 (FIG. 12) and a plurality of thread supports 1020 may be connected to the diffuser.

The pivot support 1300 also includes a closure block 1324 having a central opening 1502 to receive the threaded portion 1310 and the nut 1516 of the ball stud 1302. The hermetic block 1324 provides an upper support sheet 1526 for the upper pivot member 1306 which is formed such that the upper pivot member 1306 moves without limitation. The central opening 1502 is formed such that the optional ball washer 1526 or nut 1516 in contact with the closure block 1324 moves the ball stud 1302 and the upper pivot member 1306. The closure block 1324 is backed up. One or more O-rings 1514 that further provide a seal between the plate 28 and the surrounding environment, and are connected to the backing plate by a plurality of fasteners, such as bolts. Has an O-ring groove 1522 formed.

16 is a detailed view of another embodiment of a pivot support 1300 connected to the diffuser 20. The cover cup 1326 is shown connected to the top surface of the closure block 1324 by a plurality of cover bolts 1602. The cover bolt may be threaded into a corresponding hole formed in the hermetic block 1324, or a plurality of cover bolts 1602 may be used to connect the plurality of fasteners 1524 to the hermetic block 1324 rather than the backing. In the case of using different hole patterns in the plate, it is possible to extend through the closure block 1324 so that threaded holes are suitably formed in the backing plate. A cover o-ring 1604 formed of polymer or rubber may be disposed in the o-ring groove 1522 to further provide sealing of the pivot support 1300 in the chamber. The cover cup 1326 also provides a cover zone 1606 within the cover cup 1326 so as to move without restriction of the screw portion 1310 and the nut 1516.

17A is a top view of one embodiment of a backing plate 28 having a plurality of pivot supports 1300 connected to the backing plate. A plurality of pivot supports 1300 and diffuser supports 15 are shown connected to the backing plate 28 in the central zone 1010. A diffuser 20, not shown in this figure, is typically located below the backing plate 28. The diffuser 20 has an area substantially the same as that of the backing plate 28. Diffuser 20 has a corresponding central zone 1010 that may allow any component shown in FIG. 17A to engage with diffuser 20. Although eight pivot supports 1300 in a symmetrical pattern are shown in this embodiment, the pivot supports 1300 may be formed in any pattern, number, size in the backing plate 28.

FIG. 17B is a top view of another embodiment of a backing plate 28 having one or more openings 1080 and a plurality of pivot supports 1300 for the gas delivery system 1050. All parts may be located within the central zone 1010, or alternatively, an alternative opening 1048a formed to receive the gas delivery system 1050a may have a backing plate 28 outside of the central zone 1010. Can be connected to. A diffuser 20, not shown in FIG. 17B, is typically located below the backing plate 28. The diffuser 20 has an area substantially the same as that of the backing plate 28. Diffuser 20 has a corresponding central zone 1010 that may allow any component within central zone 1010 shown in FIG. 17B to engage with diffuser 20. If an alternative gas delivery system 1050a is used, the diffuser will have any corresponding coupling point formed in the diffuser to accommodate the alternative delivery system. Although eight pivot supports 1300 in a symmetrical pattern are shown in this embodiment, the pivot supports 1300 may be formed in any number of patterns and sizes in the backing plate 28.

FIG. 17C is a top view of another embodiment of a backing plate 28 similar to the embodiment shown in FIG. 17B except for adding a plurality of threaded supports 1020 in the central zone 1010. Diffuser 20, not shown in FIG. 17C, is typically located below backing plate 28. The diffuser 20 has an area substantially similar to that of the backing plate 28. Diffuser 20 has a corresponding central zone 1010 that can allow any component shown in FIG. 17C to engage with diffuser 20. Although twelve threaded supports 1020 and eight pivot supports 1300 are shown in this embodiment in a symmetrical pattern, a plurality of threaded supports 1020 and pivot supports 1300 may be disposed within the backing plate 28. It can be formed in the pattern, number, and size of. An opening 1048 in the backing plate 28 is shown to receive the gas delivery system 1050 to supply process gas or gases to the diffuser 20. In this embodiment, the diffuser may have a suitable bond point formed in the diffuser to receive the gas delivery system 1050. Alternative gas passages 300 are also shown and process gas may be used alone in diffuser 20 or jointly with opening 1048.

Diffuser 20 is performed at a processing temperature of about 350 ° C. to 450 ° C., depending on the material of the diffuser, and portions of the diffuser may exhibit expansion and contraction during the process cycle. Various portions of pivot support 1300 and corresponding portions of backing plate 28 allow for lateral movement of diffuser 20 to allow it to expand or contract. The first bore 1328, the conical opening 1408 and the cover section 1606 allow a gap for the movement of the ball stud 1302, while the extending bore 1330 allows movement of the ball stud housing 1304. Allow a break for. Thus, lateral movement of portions of the diffuser 20 is allowed in response to any expansion or contraction impinged by the diffuser 20. In one embodiment, pivot support 1300 allows movement of portions of diffuser 20 between about .25 inches and about .5 inches.

The diffuser 20 may tend to hang in a particular zone that is deformed in the downward vertical direction, but if the portion of the diffuser 20 moves horizontally due to expansion or contraction, the same or other portion of the diffuser 20 Because of the inherent radial path in the design surface of this pivot support 1300 it can move vertically. Any upward vertical movement may be damaged by the upper surface 1610 of the elongated bore 1330 that can act as a stop when the ball stud housing 1304 contacts the upper surface 1610. Alternatively or additionally, the threaded upper pivot member 1306 may be connected to the ball stud 1302.

In other embodiments, the pivot support 1300 may be adjusted to known variations of certain regions of the diffuser 20 that anticipate any vertical and lateral movements that may be facilitated by the pivot support 1300. This embodiment describes a method of supporting a diffuser inside a chamber using a plurality of support members. If the diffuser 20 is suspended from the optional fusible suspension 57 and the backing plate at a certain height or distance above the substrate support 12 (FIG. 1), the diffuser support 15 can be adjusted to a predetermined height, and FIG. And locked in position as shown in the figures of FIG. 5 and FIG. 6A. Based on the actual or desired distance between the substrate support and the portion of the diffuser 20 under the pivot support 1300, the pivot support 1300, which is already installed, as shown in the figures of FIGS. It may be necessary to adjust upward or downward by rotating the nut 1516 on the threaded portion 1310 of the stud 1302. The nut 1516 on each threaded portion 1310 is defined by the jam nut 1518 when each portion of the diffuser 20 under each pivot support 1300 is determined at a desired distance relative to the substrate support 12. It can be tightened and locked.

The distance between the substrate support and the diffuser can be set by the operator using a gauge or gauges to set and measure multiple zones between the diffuser and the substrate support. When this measurement is complete and the height of the diffuser above the substrate support is determined by fully adjusting the nut 1516 and the diffuser support 15, which are connected to the threaded portion 1310 of the ball stud 1302, the nut 1516 is rotated appropriately. Can be loosened by This looseness of the nut 1516 can cause the portion suspended by each pivot support 1300 to drop, reducing the distance between the diffuser and the substrate support at the point of impact. If nut 1516 is loosened in a predetermined amount, jam nut 1518 may be properly tightened against nut 1516 to lock nut 1516 in place. Looseness of the nut 1516 and subsequent drops of the diffuser may be intended to make known expandable or contractile deformation of the portion of the diffuser. When affected by the processing state, these portions may be limited in deformation downward by contact between the nut 1516 and the upper pivot member 1306. The plurality of pivot supports 1300 already adjusted by the operator as described above may result in a horizontal profile of the diffuser at any desired distance to the substrate support during processing. Alternatively, the diffuser 20 may be adjusted by any other method that is or is not related to the horizontal profile of the substrate support 12.

Alternatively, the looseness of the particular nut 1516 connected to the threaded portion 1310 may not cause a drop in the diffuser 20, and the nut 1516 will not contact the upper pivot member 1306. If nut 1516 is loosened by a predetermined amount, jam nut 1518 may be appropriately tightened against nut 1516 to lock nut 1516 in place. The diffuser 20 may be at the same height before the nut 1516 is loosened. The looseness of the nut 1516 may be intended to make known expandable or contractile deformation of the portion of the diffuser. When affected by the processing state, these portions can then cause each nut 1516 to deform vertically downward until it contacts the upper pivot member 1306. The plurality of pivot supports 1300 already adjusted by the operator as described above may result in a horizontal profile of the diffuser at any desired distance to the substrate support during processing.

All of the aforementioned methods of adjusting the diffuser profile can be performed under vacuum conditions, measured, and adjusted by covering any inlet or outlet that is not necessary to adjust the horizontal profile of the diffuser. For example, in an embodiment using the pivot support 1300, (FIG. 1) the gas block 17, the gas passageway 300, or the opening 1048 may be sealed and the sealing block 1324 may be backed. May be connected to the plate 28. Any other unused opening may be closed and the chamber may be pumped down at a suitable pressure that may droop the portion of backing plate 28 or diffuser 20. In one embodiment, the gauge or gauges may be used by the operator to measure and adjust the height of the diffuser relative to the substrate support at multiple points. In other embodiments, the diffuser profile can be adjusted by any method, regardless of the horizontal direction of the substrate support. Any adjustment may be performed by rotating an adjustment member connected to the diffuser, such as the diffuser support 15, the threaded support 1020, and the nut 1516 on the pivot support 1300.

When all adjustments are made in a vacuum or ambient environment, and each cover, such as cover plate 16 and cover cup 1326, the diffuser can be connected to the desired horizontal profile or chamber, any horizontal to anticipate known variations. It exists in the profile. Caps and seals in place can be removed to facilitate negative pressure in the chamber during adjustment and the chamber can be ready for processing.

An apparatus and method for adjusting the cross-sectional curvature or horizontal profile of a diffuser are described. The diffuser can be adjusted to exhibit a horizontal profile, one of the planar profile shown in FIG. 1, the convex profile shown in FIG. 18A, and the concave profile shown in FIG. 18B. The horizontal profile of the diffuser can be adjusted relative to the substrate support in the chamber. The present invention is not limited by theory, and if the substrate support is in a horizontal horizontal profile and the diffuser is in a similar horizontal profile, process gases such as silane and hydrogen supplied to the processing region are for deposition in the central region of the substrate. It is believed to deposit amorphous silicon in larger portions on the edge of the substrate. In one embodiment, the substrate support may be in the direction of the plane and the horizontal profile of the diffuser is concave relative to the planar substrate support such that it results in a processing region below the central region of the diffuser that allows a greater volume of process gas to flow over the substrate. Will be adjusted. It is believed that a processing region with a larger volume of process gas will promote more uniform deposition over a large area substrate.

While the foregoing is directed to embodiments of the invention, there may be other and further embodiments of the invention that will not depart from the spirit thereof, and the spirit of the invention is defined by the following claims Is determined.

The gas distribution plate, or diffuser, in the plasma chamber is supported to eliminate sagging or creep tendencies of the gas distribution plate or diffuser due to gravity being weighted during the hot CVD or PECVD process.

Claims (46)

A plasma enhanced chemical vapor deposition apparatus, Chamber body; A backing plate having at least one opening formed therethrough; A gas distribution showerhead disposed in the chamber body; And At least one support member disposed through the at least one opening in the backing plate and coupled with the gas distribution showerhead Including, The gas distribution showerhead has a first surface and a second surface opposite the first surface, the gas distribution showerhead has a plurality of gas passages extending therethrough, and at least one gas passage is the first surface. Has a first diameter at the surface and the first diameter is less than a second diameter of the at least one gas passageway at the second surface, The at least one support member is movable to adjust the gap between the first surface and the backing plate. Plasma enhanced chemical vapor deposition apparatus. The method of claim 1, The at least one support member includes a male connector Plasma enhanced chemical vapor deposition apparatus. The method of claim 1, The at least one support member includes threads Plasma enhanced chemical vapor deposition apparatus. The method of claim 1, The at least one support member includes one or more pivot mechanisms. Plasma enhanced chemical vapor deposition apparatus. delete The method of claim 2, The gas distribution showerhead has a female connector Plasma enhanced chemical vapor deposition apparatus. The method of claim 2, The support member is connected to the power source and is configured to be electrically connected to the gas distribution showerhead. Plasma enhanced chemical vapor deposition apparatus. The method of claim 1, Further comprising a substrate support having a planar horizontal profile and disposed within the chamber body, The substrate support is disposed opposite the gas distribution showerhead, The gas distribution showerhead has a concave horizontal profile with respect to the profile of the substrate support. Plasma enhanced chemical vapor deposition apparatus. The method of claim 1,  And a gas passage disposed through the backing plate to deliver process gas to the gas distribution showerhead. Plasma enhanced chemical vapor deposition apparatus. A plasma enhanced chemical vapor deposition chamber, Chamber body; A gas distribution showerhead disposed in the chamber body; A backing plate having at least one opening formed therethrough; And At least one support member disposed through the at least one opening and connected to the backing plate and at least one slot Including, The gas distribution showerhead includes a rectangular plate having a first surface and a second surface opposite the first surface, the rectangular plate having a plurality of gas passages extending therethrough, the at least one gas passage being Having a first diameter at the first surface and wherein the first diameter is smaller than a second diameter of the at least one gas passageway at the second surface, the rectangular plate is also formed at the first surface and the plurality of gases Has at least one slot that is separate and distinct from the passageway, The at least one opening is axially aligned with a corresponding slot in the first surface, The at least one support member is movable to adjust the gap between the first surface and the backing plate. Plasma enhanced chemical vapor deposition chamber. The method of claim 10, The at least one support member includes threads that engage the at least one slot. Plasma enhanced chemical vapor deposition chamber. The method of claim 10, The at least one slot includes a female mating portion. Plasma enhanced chemical vapor deposition chamber. The method of claim 10, The at least one support member includes one or more pivot members. Plasma enhanced chemical vapor deposition chamber. The method of claim 10, And a gas delivery passage disposed through the backing plate to deliver process gas to the rectangular plate. Plasma enhanced chemical vapor deposition chamber. The method of claim 10, Further comprising a substrate support having a planar horizontal profile and disposed within the chamber body, The substrate support is disposed opposite the rectangular plate, The rectangular plate has the form of one of a horizontal profile, a concave horizontal profile, or a convex horizontal profile with respect to the horizontal profile of the substrate support. Plasma enhanced chemical vapor deposition chamber. A gas distribution showerhead assembly for delivering process gases to a reaction zone in a chamber having a backing plate, the method comprising: The gas distribution showerhead, A rectangular plate having four edges and a central region, a plurality of openings formed therethrough, and at least one slot located within and distinct from said plurality of openings; A support connected to each of the four edges of the rectangular plate; And At least one support member connected to the at least one slot Including, By rotation of the at least one support member, the central zone of the rectangular plate can be supported and adjusted with respect to the horizontal profile of the backing plate. Gas distribution showerhead assembly. The method of claim 16, The horizontal profile of the rectangular plate is concave and the horizontal profile of the backing plate is flat Gas distribution showerhead assembly. The method of claim 16, The at least one slot includes a female connector Gas distribution showerhead assembly. The method of claim 18, The at least one support member includes threads that engage the female connector. Gas distribution showerhead assembly. A gas distribution showerhead assembly, Rectangular plate having a central area; And At least one opening formed through the first face of the rectangular plate and located within the central region Including, The rectangular plate has a plurality of gas passages formed through from a first side of the rectangular plate to a second side of the rectangular plate, The at least one opening disposed over at least one of the plurality of gas passages and configured to receive at least one detachable support member Gas distribution showerhead assembly. delete The method of claim 20, The at least one opening comprises a female thread. Gas distribution showerhead assembly. The method of claim 22, The female thread includes a bolt configured to engage the threaded portion. Gas distribution showerhead assembly. 21. The method of claim 20, The detachable support member includes one or more pivot members. Gas distribution showerhead assembly. 21. The method of claim 20, The detachable support member includes a threaded portion Gas distribution showerhead assembly. delete delete delete delete delete delete delete delete delete delete delete delete delete delete delete delete delete delete delete delete delete

Images