US20080317973A1 - Diffuser support - Google Patents

Diffuser support Download PDF

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Publication number
US20080317973A1
US20080317973A1 US11/767,307 US76730707A US2008317973A1 US 20080317973 A1 US20080317973 A1 US 20080317973A1 US 76730707 A US76730707 A US 76730707A US 2008317973 A1 US2008317973 A1 US 2008317973A1
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United States
Prior art keywords
diffuser
backing plate
apparatus
support member
coupled
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
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US11/767,307
Inventor
John M. White
Robin L. Tiner
Yeh Kurt Chang
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Applied Materials Inc
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Applied Materials Inc
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Priority to US11/767,307 priority Critical patent/US20080317973A1/en
Assigned to APPLIED MATERIALS, INC. reassignment APPLIED MATERIALS, INC. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: CHANG, YEH KURT, WHITE, JOHN M, TINER, ROBIN L
Publication of US20080317973A1 publication Critical patent/US20080317973A1/en
Application status is Abandoned legal-status Critical

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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563Gas nozzles
    • C23C16/45565Shower nozzles

Abstract

Embodiments of gas distribution apparatus comprise a diffuser support member coupled to a diffuser and moveably disposed through a backing plate. Embodiments of methods of processing a substrate on a substrate receiving surface of a substrate support comprise providing a diffuser in which a diffuser support member supports the diffuser and is moveably disposed through the backing plate.

Description

    BACKGROUND OF THE INVENTION
  • 1. Field of the Invention
  • Embodiments of the present invention generally relate to apparatus and methods for supporting a gas distribution plate or diffuser.
  • 2. Description of the Related Art
  • Substrates in which flat panel displays are made from have increased dramatically in size over recent years. For example, a substrate which is typically divided to make a plurality of TFT-LCD flat panel displays had sizes of about 2,000 cm2 and have increased in size to about 25,000 cm2 or larger. Such substrates are typically processed in a plasma chamber having a diffuser. The diffuser is generally supported in a spaced-apart relation facing the substrate with a plurality of gas passageways adapted to disperse one or more process gases toward the substrate to perform a process to the substrate, such as deposition or etch. This increase in substrate size has brought an increase in diffuser size since the diffuser is approximately the size of the substrate.
  • Problems with current diffusers include sagging, creeping, movement, and/or cracking of the diffuser or associated components over time, due to exposure of the diffuser to high processing temperatures, to the forces of gravity, and to other forces. Such problems with current diffuser designs may adversely affect substrate processing uniformity and properties and may increase maintenance and replacement costs of the diffuser and associated components.
  • Therefore, there is a need for an improved gas distribution apparatus and methods.
  • SUMMARY OF THE INVENTION
  • Embodiments of gas distribution apparatus comprise a diffuser support member coupled to a diffuser and moveably disposed through a backing plate. Certain embodiments of gas distribution apparatus further comprise a chamber body including a bottom and walls. The backing plate is disposed over the chamber body. A chamber interior volume is bounded by the chamber body and the backing plate. The diffuser is disposed within the chamber interior volume. Other embodiments of gas distribution apparatus further comprise variable spacing between the backing plate and the diffuser.
  • Embodiments of methods of processing a substrate on a substrate receiving surface of a substrate support comprise providing a diffuser within a chamber interior volume bounded by a chamber body and a backing plate. A diffuser support member supports the diffuser and is moveably disposed through the backing plate. In certain embodiments, a vacuum pressure is applied within the chamber interior volume in which the backing plate flexes in response to the vacuum pressure. In other embodiments, the diffuser support member is coupled to a structure outside of the chamber interior volume.
  • BRIEF DESCRIPTION OF THE DRAWINGS
  • So that the manner in which the above recited features of the present invention can be understood in detail, a more particular description of the invention, briefly summarized above, may be had by reference to embodiments, some of which are illustrated in the appended drawings. It is to be noted, however, that the appended drawings illustrate only typical embodiments of this invention and are therefore not to be considered limiting of its scope, for the invention may admit to other equally effective embodiments.
  • FIG. 1 is a schematic cross-sectional view of one embodiment of a diffuser supported in a chamber.
  • FIG. 2 is a top isometric view of the frame structure of FIG. 1.
  • FIG. 3 is an enlarged schematic cross-sectional view of diffuser support member, the backing plate, and the diffuser of the chamber of FIG. 1 in which the backing plate is flexed.
  • FIGS. 4A-4E show various embodiments of sealing devices associated with the diffuser support members to providing a vacuum seal of the openings of the backing plate.
  • FIG. 5 is a cross-section view of one embodiment of a diffuser support member coupled to a diffuser through a mating mechanism coupled to the diffuser.
  • FIG. 6A is a cross-section view of one embodiment of an insulative sleeve disposed at least partially around a diffuser support member.
  • FIG. 6B is a cross-sectional view of one embodiment of a dielectric break to electrically isolate a frame structure from a diffuser support member or reduce the amount of RF current traveling from the backing plate through the diffuser support members to the frame structure.
  • FIG. 7 is a cross-sectional view of one embodiment of a gas feed-through assembly coupled to the gas inlet of the backing plate of FIG. 1.
  • FIG. 8 is a schematic cross-sectional view of another embodiment of a chamber in which diffuser support members are coupled to a support frame.
  • To facilitate understanding, identical reference numerals have been used, where possible, to designate identical elements that are common to the figures. It is contemplated that elements disclosed in one embodiment may be beneficially utilized on other embodiments without specific recitation.
  • DETAILED DESCRIPTION
  • Embodiments of the present invention generally provide apparatus and methods for supporting a diffuser in a processing apparatus adapted to process the substrate, such as in a deposition, etch, plasma treatment, plasma clean, or other substrate process. FIG. 1 is a schematic cross-sectional view of one embodiment of a gas distribution apparatus comprising a diffuser 110 supported in a chamber 100, such as a plasma enhanced chemical vapor deposition (PECVD) chamber. One suitable PECVD chamber which may be used is available from Applied Materials, Inc., located in Santa Clara, Calif. or from subsidiaries of Applied Materials, Inc. It is understood that other chambers may benefit from the present apparatus and methods, such as an etch chamber, plasma treatment chamber, plasma clean chamber, and other chambers. The chamber shown in FIG. 1 is adapted to process substrates in a horizontal orientation. It is understood that the present apparatus and methods may also apply to chambers adapted to process substrates in other orientations, such as a vertical orientation.
  • The chamber 100 comprises a chamber body having walls 102 and a bottom 104. The chamber 100 also includes a backing plate 112 coupled to the lid 123 of the chamber 100. A chamber interior volume 106 is bounded by the chamber body and the backing plate 112. A substrate support 130 is disposed within the chamber interior volume 106. The chamber interior volume 106 is accessed through a sealable slit valve 108 so that a substrate 140 may be transferred in and out of the chamber 100. The substrate support 130 includes a substrate receiving surface 132 for supporting the substrate 140 and includes a stem 134 coupled to a lift system 136 to raise and lower the substrate support 130. A shadow ring (not shown) may be optionally placed over the periphery of the substrate 140. Lift pins 138 are moveably disposed through the substrate support 130 to move the substrate 140 to and from the substrate receiving surface 132. The substrate support 130 may also include heating and/or cooling elements 139 to maintain the substrate support 130 at a desired temperature. The substrate support 130 may also include grounding straps 131 to provide radio frequency (RF) grounding at the periphery of the substrate support 130.
  • A gas source 120 is coupled to the backing plate 112 to provide one or more gases through a gas inlet 142 in the backing plate 112. The gas travels through the gas inlet 142 and through gas passages 111 in the diffuser 110 to a processing region 180 above the substrate 140. A vacuum pump 109 is coupled to the chamber 100 to control the chamber interior volume 106 and the processing region 180 at a desired pressure.
  • The diffuser 110 includes a first or upstream side 113 and a second or downstream side 116. Each of the gas passages 111 are formed through the diffuser 110 to allow gas transfer from the upstream side 113 to the downstream side 116 to the processing region 180. A radio frequency (RF) power source 122 may be coupled to the backing plate 112 to provide RF power to the diffuser 110. The backing plate 112, which is shown supported by the lid 123, may be electrically isolated from other portions of the chamber 100 by an insulator 185. The RF power applied to the diffuser creates an electric field between the diffuser 110 and the substrate support 130 so that a plasma may be generated from gases in the processing region 180. Various frequencies may be used, such as a frequency between about 0.3 MHz and about 200 MHz, such as a RF power provided at a frequency of 13.56 MHz.
  • A remote plasma source 124, such as an inductively coupled or microwave remote plasma source, may also be coupled between the gas source 120 and the gas inlet 142 formed in the backing plate 112. Between processing substrates, a cleaning gas may be provided to the remote plasma source 124 so that a remote plasma is generated and provided within the chamber 100 to clean chamber components. The cleaning gas may be further excited by RF current supplied by the RF power source 122 to the diffuser 110. Suitable cleaning gases include but are not limited to NF3, F2, and SF6.
  • The diffuser 110 is coupled to the backing plate 112 at an edge portion of the diffuser 110 by a suspension 114. The suspension 114 may be flexible to allow expansion and contraction of the diffuser 110. In the embodiment shown in FIG. 1, the suspension 114 also transmits RF current from the backing plate 112 applied by the RF power source 122 to the diffuser 110. Examples of a flexible suspension are disclosed in U.S. Pat. No. 6,477,980, assigned to Applied Materials, Inc., incorporated by reference in its entirety to the extent not inconsistent with the present disclosure.
  • One or more diffuser support members 160 are moveably disposed through respective openings 165 in backing plate 112 and are coupled to the diffuser 110. The diffuser support members 160 are coupled to a frame structure 175. The material of the diffuser support members 160 may be any process compatible material of sufficient strength to support the diffuser 110, such as metals, alloys, polymers, ceramics, aluminum, titanium, and combinations thereof. The diffuser supports 160 are preferably coupled to a center area of the diffuser 110. Since the diffuser support members 160 are moveably disposed through the backing plate 112, the diffuser support members 160 may support the center area of diffuser 110 in any desired position independent of the position of the center area of the backing plate 112.
  • The center area of the diffuser 110 is defined herein as a location within a radius R from the center of the diffuser, wherein R is 25% or less of the diagonal of the diffuser, preferably 15% or less of the diagonal of the diffuser, more preferably 10% or less of the diagonal of the diffuser. For instance, if the dimensions of a diffuser are 2.3 meters in length and 2.0 meters in width, the diagonal would be about 3.0 meters.
  • As shown in FIG. 1, the diffuser support members 160 may be coupled to the frame structure 175 by a coupling assembly 150. The coupling assembly 150 may comprise a support ring 148 and one or more hangers 162. The hangers 162 are coupled to the frame structure 175 and to the support ring 148. The support ring 148 is coupled to the diffuser support members 160. In one embodiment, the support ring 148 may comprise a dielectric material, such as ceramic or polymer materials, to electrically isolate the frame structure 175 or reduce the amount of RF current traveling from the backing plate through the diffuser support members 160 to the frame structure 175. In other embodiments, the support ring 148 may comprise a conductive material, such as steel, aluminum, and other materials.
  • FIG. 2 is a top isometric view of the frame structure 175 of FIG. 1. The frame structure 175 is disposed above the backing plate 112 and is coupled to the lid 123. While the support ring 148 is shown as an annular shape, other shapes may be used, which include polygonal shapes, oval shapes, and other simple or complex patterns and shapes.
  • FIG. 3 is an enlarged schematic cross-sectional view of diffuser support members 160, the backing plate 112, and the diffuser 110 of the chamber 100 of FIG. 1 in which the backing plate 112 is bowed or flexed. When a vacuum pressure is applied to the interior chamber volume 106, the backing plate 112 experiences a bow, flex, droop or sag due to the large differential in pressure between the interior chamber volume 106 and atmospheric pressure. As used herein the term “vacuum pressure” means a pressure of less than 760 Torr, preferably less than 100 Torr, more preferably less than 15 Torr. For example, a backing plate for a chamber to process substrates having a substrate surface area of 25,000 cm2 or more may bow or flex a couple of millimeters due to the vacuum pressure applied to it. In comparison, a typical plasma process may require a controlled spacing between the diffuser 110 and the substrate receiving surface 132 of the substrate support 130 to be about 30 millimeters or less, or even 15 millimeters or less. Therefore, a variation of the spacing between the substrate receiving surface 132 and the diffuser may adversely affect plasma processing, such as plasma deposition processing film properties and uniformity.
  • As shown in FIG. 3, the bow or flex of the backing plate 112 does not affect the position of the center area of the diffuser 110 since the center area of the diffuser 112 is supported by the diffuser support members 160 moveably disposed through the backing plate 112. The diffuser support members 160 are supported by frame structure 175. The frame structure 175 is disposed outside the chamber interior volume 106. Thus, the position of the center area of the diffuser 112 does not depend on the position of the center area of the backing plate 112. In this manner, bowing, flexing, dropping, sagging, creeping, movement, cracking, and maintenance of the diffuser 110 may be reduced since the center area of the diffuser 110 is supported in a position independent of pressure forces acting on the center area of the backing plate 112. Movement, bowing, or flexing of the backing plate 112 in response to the vacuum pressure applied within the interior volume causes the spacing between the backing plate 112 and the top of the diffuser 110 to vary. The position of the center area of the diffuser 110 remains in substantially the same position. Thus, a more consistent spacing between the diffuser 110 and the substrate receiving surface 132 is maintained even if the backing plates bows or flexes. Therefore, plasma processing is improved and the chamber 100 requires reduced maintenance.
  • FIGS. 4A-4E show various embodiments of sealing devices 147 associated with the diffuser support members 160 to providing a vacuum seal of the openings 165 of the backing plate. The sealing devices 147 isolate the chamber interior volume 106 from the ambient outside environment while allowing relative movement of the diffuser support member 160 and the backing plate 112.
  • FIG. 4A shows a sealing device 147A comprising an o-ring 325A sandwiched between a cap 347A and a top side 412 of the backing plate 112. The cap 347A includes an opening 417A formed therein to receive the diffuser support member 160 and may be coupled to the top side 412 of the backing plate 112 by fasteners 410A, such as bolts, screws, and the like. The o-ring 325A seals the opening 165 by being in sliding contact with the diffuser support member 160.
  • FIG. 4B shows a sealing device 147B comprising an o-ring 325B sandwiched between a cap 347B and the bottom side 413 of the backing plate 112. The cap 347B includes an opening 417B formed therein to receive the diffuser support member 160 and may be coupled to the bottom side 413 of the backing plate 112 by fasteners 410B, such as bolts, screws, and the like. The o-ring 325B seals the opening 165 in the backing plate 112 by being in sliding contact with the diffuser support member 160.
  • FIG. 4C shows a sealing device 147C comprising an o-ring 325C disposed in a land 420 formed in the backing plate 112. The o-ring 325C seals the opening 165 in the backing plate 112 by being in sliding contact with the diffuser support member 160.
  • FIG. 4D shows a sealing device 147D comprising an o-ring 325D disposed in a land 421 formed in the diffuser support member 160. The o-ring 325D seals the opening 165 in the backing plate by being in sliding contact with the opening 165 of the backing plate 112.
  • FIG. 4E shows a sealing device 147E comprising a flexible bellow 402 surround at least a portion of the diffuser support member 160. As shown, the flexible bellow 402 is coupled to the backing plate 112 and to the support ring 148. The flexible bellow 402 can expand or contract due to the variation in the distance between the backing plate 112 and the support ring 148. The flexible bellow 402 may be made of metals, such as steels or aluminum, or a polymer material. An optional cover 405 may be disposed at least partially around the diffuser support member 160 to provide a vacuum seal between the support ring 148 and the diffuser support member 160.
  • FIG. 5 is a cross-section view of one embodiment of a diffuser support member 160 coupled to the diffuser through a mating mechanism 425 coupled to the diffuser 110. The mating mechanism 425 has a cavity adapted to receive and mate with a head portion 525 of the diffuser support member 160. In one aspect, the mating mechanism provides ease of attaching and detaching the mating mechanism 425 from the diffuser support member 160.
  • FIG. 6A is a cross-section view of one embodiment of an insulative sleeve 602 disposed at least partially around the diffuser support member 160 to electrically isolate the frame structure from the diffuser support member 160 or reduce the amount of RF current traveling from the backing plate through the diffuser support members to the frame structure. The insulative sleeve 602 provides an insulative separation between the diffuser support member 160 and the support ring 148 of the coupling assembly 150. In other embodiments (not shown), the diffuser support member may be coupled to support frame with the coupling assembly and the insulative sleeve may provide an insulative separation between the diffuser support member and the support frame.
  • FIG. 6B is a cross-sectional view of one embodiment of a dielectric break 560 coupled to the diffuser support member 160. The dielectric break electrically isolates the frame structure 175 from the diffuser support member 160 or reduces the amount of RF current traveling from the backing plate 112 through the diffuser support members 160 to the frame structure 175. The dielectric break 560 may receive an end of the diffuser support member 160 and an end of the hanger 162 without the support ring 148 and may be coupled together by a fastener 565, such as a pin, a screw, or a bolt.
  • FIG. 7 is a cross-sectional view of one embodiment of a gas feed-through assembly 710 coupled to the gas inlet 142 of the backing plate 112. The gas feed-through assembly 710 includes an inlet block 715 in fluid communication with the gas inlet 142. The inlet block 715 includes a connector 745 that is coupled to the RF power source 122. The inlet block 715 comprises a conductive material, such as aluminum. RF current provided by the RF power source 112 travels through the inlet block 715, through the backing plate 112, through the flexible suspension 114, and to the diffuser 110. A conduit 740 provides fluid communication between the inlet block 715 and the remote plasma source interface 720. The remote plasma source interface 720 is coupled to the remote plasma source 124 which is coupled to the gas source 120. In one embodiment, the conduit 740 preferably comprises a dielectric material to reduce the amount of RF current traveling from the inlet block 715 therethrough.
  • FIG. 8 is a schematic cross-sectional view of another embodiment of a chamber 900 in which the diffuser support members 160 are directly coupled to the support frame 175. The RF power source 122 may be coupled to the backing plate 112 or may be coupled to one or more of the diffuser support members 160. In either embodiment, the chamber 900 may include a cover 118 adapted to isolate any electrically active portions of the chamber 900. The cover 118 may be extended to the lid 123, which may be at ground potential. In another embodiment (not shown), an insulative sleeve may at least partially surround each diffuser support member 160 to electrically isolate the support frame 175 from the diffuser support members 160.
  • While the foregoing is directed to embodiments of the present invention, other and further embodiments of the invention may be devised without departing from the basic scope thereof, and the scope thereof is determined by the claims that follow.

Claims (33)

1. A gas distribution apparatus, comprising:
a diffuser,
a backing plate, and
a diffuser support member moveably disposed through the backing plate and coupled to the diffuser.
2. The apparatus of claim 1, wherein a spacing between the backing plate and the diffuser is variable.
3. The apparatus of claim 1, wherein the backing plate further comprises an opening wherein the diffuser support member is moveably disposed therethrough.
4. The apparatus of claim 3, further comprising a sealing device associated with the diffuser support member.
5. The apparatus of claim 4, wherein the sealing device provides a vacuum seal for the opening in the backing plate.
6. The apparatus of claim 5, wherein the sealing device comprises an o-ring in sliding contact with the diffuser support member.
7. The apparatus of claim 5, wherein the sealing device comprises an o-ring in sliding contact with the opening of the backing plate.
8. The apparatus of claim 5, wherein the sealing device comprises a flexible bellows.
9. The apparatus of claim 1, wherein the diffuser support member is coupled to a center region of the diffuser.
10. The apparatus of claim 1, wherein the backing plate is coupled to an edge portion of the diffuser.
11. A gas distribution apparatus, comprising:
a chamber body including a bottom and walls,
a backing plate disposed over the chamber body,
a chamber interior volume bounded by the chamber body and the backing plate,
a diffuser disposed within the chamber interior volume, and
a diffuser support member moveably disposed through the backing plate and coupled to the diffuser.
12. The apparatus of claim 11, further comprising a frame structure disposed outside of the chamber interior volume wherein the diffuser support member is coupled to the frame structure.
13. The apparatus of claim 12, wherein the frame structure is electrically isolated from the diffuser support member.
14. The apparatus of claim 12, further comprising a coupling assembly coupling the diffuser support member and the frame structure.
15. The apparatus of claim 14, wherein coupling assembly comprises a hanger coupled to the frame structure and a support ring coupled to the hanger and the diffuser support member.
16. The apparatus of claim 15, wherein support ring comprises an insulative material.
17. The apparatus of claim 15, wherein the support ring comprises a conductive material.
18. The apparatus of claim 11, further comprising an insulative sleeve disposed at least partially around the diffuser support member.
19. The apparatus of claim 15, further comprising an insulative sleeve disposed at least partially around the hanger.
20. The apparatus of claim 12, further comprising a cover over the frame structure to provide electrical isolation thereof.
21. A gas distribution apparatus, comprising:
a diffuser,
a backing plate,
a diffuser support member moveably disposed through the backing plate and coupled to the diffuser, and
a variable spacing between the backing plate and the diffuser.
22. The apparatus of claim 21, further comprising a vacuum pump providing a vacuum force to the backing plate.
23. The apparatus of claim 21, wherein the variable spacing between the backing plate and the diffuser is a function of the vacuum pressure applied to backing plate
24. The apparatus of claim 21, wherein movement of the backing plate causes the variable spacing between the backing plate and the diffuser.
25. A method of processing a substrate on a substrate receiving surface of a substrate support, comprising:
providing a diffuser within a chamber interior volume bounded by a chamber body and a backing plate,
supporting the diffuser with a diffuser support member moveably disposed through the backing plate,
applying a vacuum pressure within the chamber interior volume wherein the backing plate flexes in response to the vacuum pressure, and
delivering a gas through the diffuser towards the substrate receiving surface of the substrate support.
26. The method of claim 25, further comprising applying an RF power to the diffuser.
27. The method of claim 25, wherein a spacing between the backing plate and the diffuser is variable.
28. A method of processing a substrate within a chamber, comprising:
providing a chamber interior volume bounded by walls, a bottom, and a backing plate;
providing a diffuser within the chamber volume;
providing a diffuser support member moveably disposed through the backing plate and coupled to the diffuser; and
coupling the diffuser support member to a structure outside of the chamber interior volume.
29. The method of claim 28, insulating the structure from a RF power provided to the diffuser.
30. The method of claim 28, providing a sealing device to isolate the chamber interior volume and to allow movement of the diffuser support member through the backing plate.
31. The method of claim 28, wherein the sealing device comprises an o-ring in sliding contact to the diffuser support member.
32. The method of claim 28, wherein the sealing device comprises an o-ring in sliding contact to an opening through the backing plate.
33. The method of claim 28, wherein the sealing device is a flexible bellows surrounding at least a portion of the diffuser support member.
US11/767,307 2007-06-22 2007-06-22 Diffuser support Abandoned US20080317973A1 (en)

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US11/767,307 US20080317973A1 (en) 2007-06-22 2007-06-22 Diffuser support
JP2008158915A JP5215055B2 (en) 2007-06-22 2008-06-18 Diffuser support
KR1020080057715A KR101016860B1 (en) 2007-06-22 2008-06-19 Diffuser support
TW097123127A TWI389172B (en) 2007-06-22 2008-06-20 Diffuser support
CN2011101921429A CN102251227B (en) 2007-06-22 2008-06-20 Diffuser support
CN 200810126948 CN101333651B (en) 2007-06-22 2008-06-20 Diffuser support
US12/749,172 US9580804B2 (en) 2007-06-22 2010-03-29 Diffuser support

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Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090101069A1 (en) * 2007-10-12 2009-04-23 Suhail Anwar Rf return plates for backing plate support
US20090165722A1 (en) * 2007-12-26 2009-07-02 Jusung Engineering Co., Ltd Apparatus for treating substrate
US20120222815A1 (en) * 2011-03-04 2012-09-06 Mohamed Sabri Hybrid ceramic showerhead
JP2013533388A (en) * 2010-07-28 2013-08-22 アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated Shower head support structure for improved gas flow
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US9267205B1 (en) * 2012-05-30 2016-02-23 Alta Devices, Inc. Fastener system for supporting a liner plate in a gas showerhead reactor
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JP5285403B2 (en) * 2008-04-15 2013-09-11 東京エレクトロン株式会社 Vacuum vessel and the plasma processing apparatus
DE102011056589A1 (en) * 2011-07-12 2013-01-17 Aixtron Se Gas inlet element of a CVD reactor
KR101352925B1 (en) * 2011-09-16 2014-01-22 주식회사 에스에프에이 Chemical Vapor Deposition Apparatus for Flat Display
JP6333941B2 (en) * 2013-03-11 2018-05-30 アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated High temperature processing chamber lid and the processing chamber with the same
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DE102015101461A1 (en) * 2015-02-02 2016-08-04 Aixtron Se Apparatus for coating a large area substrate

Citations (92)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3830194A (en) * 1972-09-28 1974-08-20 Applied Materials Tech Susceptor support structure and docking assembly
US4455467A (en) * 1981-09-21 1984-06-19 General Electric Company Metal rack for microwave oven
US4522149A (en) * 1983-11-21 1985-06-11 General Instrument Corp. Reactor and susceptor for chemical vapor deposition process
US4563367A (en) * 1984-05-29 1986-01-07 Applied Materials, Inc. Apparatus and method for high rate deposition and etching
US4809421A (en) * 1984-01-16 1989-03-07 Precision Brand Products, Inc. Slotted shim
US4927991A (en) * 1987-11-10 1990-05-22 The Pillsbury Company Susceptor in combination with grid for microwave oven package
US4993358A (en) * 1989-07-28 1991-02-19 Watkins-Johnson Company Chemical vapor deposition reactor and method of operation
US5000113A (en) * 1986-12-19 1991-03-19 Applied Materials, Inc. Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process
US5044943A (en) * 1990-08-16 1991-09-03 Applied Materials, Inc. Spoked susceptor support for enhanced thermal uniformity of susceptor in semiconductor wafer processing apparatus
US5124635A (en) * 1990-02-15 1992-06-23 Photon Dynamics, Inc. Voltage imaging system using electro-optics
US5332443A (en) * 1993-06-09 1994-07-26 Applied Materials, Inc. Lift fingers for substrate processing apparatus
US5399387A (en) * 1993-01-28 1995-03-21 Applied Materials, Inc. Plasma CVD of silicon nitride thin films on large area glass substrates at high deposition rates
US5421893A (en) * 1993-02-26 1995-06-06 Applied Materials, Inc. Susceptor drive and wafer displacement mechanism
US5439524A (en) * 1993-04-05 1995-08-08 Vlsi Technology, Inc. Plasma processing apparatus
US5500256A (en) * 1994-08-16 1996-03-19 Fujitsu Limited Dry process apparatus using plural kinds of gas
US5567243A (en) * 1994-06-03 1996-10-22 Sony Corporation Apparatus for producing thin films by low temperature plasma-enhanced chemical vapor deposition using a rotating susceptor reactor
US5611865A (en) * 1993-01-28 1997-03-18 Applied Materials, Inc. Alignment of a shadow frame and large flat substrates on a heated support
US5614055A (en) * 1993-08-27 1997-03-25 Applied Materials, Inc. High density plasma CVD and etching reactor
US5614026A (en) * 1996-03-29 1997-03-25 Lam Research Corporation Showerhead for uniform distribution of process gas
US5628869A (en) * 1994-05-09 1997-05-13 Lsi Logic Corporation Plasma enhanced chemical vapor reactor with shaped electrodes
US5628829A (en) * 1994-06-03 1997-05-13 Materials Research Corporation Method and apparatus for low temperature deposition of CVD and PECVD films
US5647911A (en) * 1993-12-14 1997-07-15 Sony Corporation Gas diffuser plate assembly and RF electrode
US5714408A (en) * 1995-12-14 1998-02-03 Denso Corporation Method of forming silicon nitride with varied hydrogen concentration
US5766364A (en) * 1996-07-17 1998-06-16 Matsushita Electric Industrial Co., Ltd. Plasma processing apparatus
US5819434A (en) * 1996-04-25 1998-10-13 Applied Materials, Inc. Etch enhancement using an improved gas distribution plate
US5820686A (en) * 1993-01-21 1998-10-13 Moore Epitaxial, Inc. Multi-layer susceptor for rapid thermal process reactors
US5882411A (en) * 1996-10-21 1999-03-16 Applied Materials, Inc. Faceplate thermal choke in a CVD plasma reactor
US5928732A (en) * 1993-12-28 1999-07-27 Applied Materials, Inc. Method of forming silicon oxy-nitride films by plasma-enhanced chemical vapor deposition
US5950925A (en) * 1996-10-11 1999-09-14 Ebara Corporation Reactant gas ejector head
US5968276A (en) * 1997-07-11 1999-10-19 Applied Materials, Inc. Heat exchange passage connection
US6024799A (en) * 1997-07-11 2000-02-15 Applied Materials, Inc. Chemical vapor deposition manifold
US6030508A (en) * 1995-11-02 2000-02-29 Taiwan Semiconductor Manufacturing Company Sputter etching chamber having a gas baffle with improved uniformity
US6040022A (en) * 1987-08-14 2000-03-21 Applied Materials, Inc. PECVD of compounds of silicon from silane and nitrogen
US6041733A (en) * 1996-10-24 2000-03-28 Samsung Electronics, Co., Ltd. Plasma processing apparatus protected from discharges in association with secondary potentials
US6050506A (en) * 1998-02-13 2000-04-18 Applied Materials, Inc. Pattern of apertures in a showerhead for chemical vapor deposition
US6079356A (en) * 1997-12-02 2000-06-27 Applied Materials, Inc. Reactor optimized for chemical vapor deposition of titanium
US6113700A (en) * 1997-12-30 2000-09-05 Samsung Electronics Co., Ltd. Gas diffuser having varying thickness and nozzle density for semiconductor device fabrication and reaction furnace with gas diffuser
US6123775A (en) * 1999-06-30 2000-09-26 Lam Research Corporation Reaction chamber component having improved temperature uniformity
US6140255A (en) * 1998-12-15 2000-10-31 Advanced Micro Devices, Inc. Method for depositing silicon nitride using low temperatures
US6170432B1 (en) * 2000-01-24 2001-01-09 M.E.C. Technology, Inc. Showerhead electrode assembly for plasma processing
US6182603B1 (en) * 1998-07-13 2001-02-06 Applied Komatsu Technology, Inc. Surface-treated shower head for use in a substrate processing chamber
US6197151B1 (en) * 1996-03-01 2001-03-06 Hitachi, Ltd. Plasma processing apparatus and plasma processing method
US6203622B1 (en) * 1995-09-01 2001-03-20 Asm America, Inc. Wafer support system
US6228438B1 (en) * 1999-08-10 2001-05-08 Unakis Balzers Aktiengesellschaft Plasma reactor for the treatment of large size substrates
US6232218B1 (en) * 1995-11-15 2001-05-15 Micron Technology, Inc. Etch stop for use in etching of silicon oxide
US6254742B1 (en) * 1999-07-12 2001-07-03 Semitool, Inc. Diffuser with spiral opening pattern for an electroplating reactor vessel
US6281469B1 (en) * 1997-01-17 2001-08-28 Unaxis Balzers Aktiengesellschaft Capacitively coupled RF-plasma reactor
US6302057B1 (en) * 1998-09-15 2001-10-16 Tokyo Electron Limited Apparatus and method for electrically isolating an electrode in a PECVD process chamber
US6338874B1 (en) * 1993-01-28 2002-01-15 Applied Materials, Inc. Method for multilayer CVD processing in a single chamber
US20020006478A1 (en) * 2000-07-12 2002-01-17 Katsuhisa Yuda Method of forming silicon oxide film and forming apparatus thereof
US20020011215A1 (en) * 1997-12-12 2002-01-31 Goushu Tei Plasma treatment apparatus and method of manufacturing optical parts using the same
US6344420B1 (en) * 1999-03-15 2002-02-05 Kabushiki Kaisha Toshiba Plasma processing method and plasma processing apparatus
US6364949B1 (en) * 1999-10-19 2002-04-02 Applied Materials, Inc. 300 mm CVD chamber design for metal-organic thin film deposition
US6371712B1 (en) * 1999-09-21 2002-04-16 Applied Komatsu Technology, Inc. Support frame for substrates
US6383573B1 (en) * 2000-05-17 2002-05-07 Unaxis Balzers Aktiengesellschaft Process for manufacturing coated plastic body
US6447980B1 (en) * 2000-07-19 2002-09-10 Clariant Finance (Bvi) Limited Photoresist composition for deep UV and process thereof
US20020129769A1 (en) * 2001-03-19 2002-09-19 Apex Co. Ltd. Chemical vapor deposition apparatus
US6454855B1 (en) * 1997-06-13 2002-09-24 Unaxis Trading Ag Method for producing coated workpieces, uses and installation for the method
US20020146879A1 (en) * 2001-04-10 2002-10-10 Applied Materials, Inc. Limiting Hydrogen ion diffusion using multiple layers of SiO2 and Si3N4
US6502530B1 (en) * 2000-04-26 2003-01-07 Unaxis Balzers Aktiengesellschaft Design of gas injection for the electrode in a capacitively coupled RF plasma reactor
US6527908B2 (en) * 2000-03-21 2003-03-04 Sharp Kabushiki Kaisha Plasma process apparatus
US6548112B1 (en) * 1999-11-18 2003-04-15 Tokyo Electron Limited Apparatus and method for delivery of precursor vapor from low vapor pressure liquid sources to a CVD chamber
US6556536B1 (en) * 1998-04-24 2003-04-29 Unaxis Nimbus Limited Vacuum apparatus
US20030089314A1 (en) * 1999-03-18 2003-05-15 Nobuo Matsuki Plasma CVD film-forming device
US6566186B1 (en) * 2000-05-17 2003-05-20 Lsi Logic Corporation Capacitor with stoichiometrically adjusted dielectric and method of fabricating same
US6593548B2 (en) * 2000-09-14 2003-07-15 Japan As Represented By President Of Japan Advanced Institute Of Science And Technology Heating element CVD system
US6616766B2 (en) * 1999-07-08 2003-09-09 Genus, Inc. Method and apparatus for providing uniform gas delivery to substrates in CVD and PECVD processes
US20030170388A1 (en) * 2000-06-23 2003-09-11 Hiroshi Shinriki Method for forming thin film and appatus for forming thin film
US6619131B2 (en) * 1998-07-16 2003-09-16 Unaxis Balzers Ag Combination pressure sensor with capacitive and thermal elements
US6626988B1 (en) * 1999-05-21 2003-09-30 Bayer Aktiengesellschaft Phosphate-stabilized polyurethane materials, cross-linked by condensation, method for their production and use thereof
US20040011910A1 (en) * 2002-03-15 2004-01-22 Fuji Photo Film Co., Ltd. Methods and apparatus for manufacturing film cartridge and for feeding plate material
US6683216B1 (en) * 2002-11-06 2004-01-27 Eastman Chemical Company Continuous process for the preparation of amines
US6682630B1 (en) * 1999-09-29 2004-01-27 European Community (Ec) Uniform gas distribution in large area plasma source
US20040043637A1 (en) * 2002-09-02 2004-03-04 Yukito Aota Method of forming silicon nitride deposited film
US6756324B1 (en) * 1997-03-25 2004-06-29 International Business Machines Corporation Low temperature processes for making electronic device structures
US20040129211A1 (en) * 2003-01-07 2004-07-08 Applied Materials, Inc. Tunable gas distribution plate assembly
US20040145383A1 (en) * 2002-11-18 2004-07-29 Matthias Brunner Apparatus and method for contacting of test objects
US6772827B2 (en) * 2000-01-20 2004-08-10 Applied Materials, Inc. Suspended gas distribution manifold for plasma chamber
US6793733B2 (en) * 2002-01-25 2004-09-21 Applied Materials Inc. Gas distribution showerhead
US6852168B2 (en) * 2000-06-24 2005-02-08 Ips Ltd. Reactor for depositing thin film on wafer
US6873764B2 (en) * 2000-01-27 2005-03-29 Unaxis Balzers Aktiengesellschaft Method for producing a grid structure, an optical element, an evanescence field sensor plate, microtitre plate and an optical communication engineering coupler as well as a device for monitoring a wavelength
US20050066898A1 (en) * 2003-09-10 2005-03-31 Unaxis Balzers Ltd. Voltage non-uniformity compensation method for high frequency plasma reactor for the treatment of rectangular large area substrates
US20050133161A1 (en) * 2002-07-08 2005-06-23 Carpenter Craig M. Apparatus and method for depositing materials onto microelectronic workpieces
US6916407B2 (en) * 2000-11-27 2005-07-12 Unaxis Trading Ag Target comprising thickness profiling for an RF magnetron
US6924241B2 (en) * 2003-02-24 2005-08-02 Promos Technologies, Inc. Method of making a silicon nitride film that is transmissive to ultraviolet light
US20050183827A1 (en) * 2004-02-24 2005-08-25 Applied Materials, Inc. Showerhead mounting to accommodate thermal expansion
US6942753B2 (en) * 2003-04-16 2005-09-13 Applied Materials, Inc. Gas distribution plate assembly for large area plasma enhanced chemical vapor deposition
US20050199182A1 (en) * 2002-07-05 2005-09-15 Ulvac, Inc. Apparatus for the preparation of film
US20060005771A1 (en) * 2004-07-12 2006-01-12 Applied Materials, Inc. Apparatus and method of shaping profiles of large-area PECVD electrodes
US20060045322A1 (en) * 2004-08-26 2006-03-02 Ian Clarke Method and system for recognizing a candidate character in a captured image
US20060054280A1 (en) * 2004-02-23 2006-03-16 Jang Geun-Ha Apparatus of manufacturing display substrate and showerhead assembly equipped therein
US20060060138A1 (en) * 2004-09-20 2006-03-23 Applied Materials, Inc. Diffuser gravity support

Family Cites Families (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6025235A (en) 1983-07-22 1985-02-08 Hitachi Ltd Etching device
JPS63187619A (en) 1987-01-30 1988-08-03 Fuji Xerox Co Ltd Plasma cvd system
JPH0431023B2 (en) 1987-12-04 1992-05-25
US4792378A (en) 1987-12-15 1988-12-20 Texas Instruments Incorporated Gas dispersion disk for use in plasma enhanced chemical vapor deposition reactor
US5776963A (en) 1989-05-19 1998-07-07 Hoechst Marion Roussel, Inc. 3-(heteroaryl)-1- (2,3-dihydro-1h-isoindol-2-yl)alkyl!pyrrolidines and 3-(heteroaryl)-1- (2,3-dihydro-1h-indol-1-yl)alkyl!pyrrolidines and related compounds and their therapeutic untility
JP2969596B2 (en) 1989-10-06 1999-11-02 アネルバ株式会社 Cvd equipment
US5173580A (en) 1990-11-15 1992-12-22 The Pillsbury Company Susceptor with conductive border for heating foods in a microwave oven
JP2662365B2 (en) 1993-01-28 1997-10-08 アプライド マテリアルズ インコーポレイテッド Single substrate type vacuum processing apparatus having an improved exhaust system
AU2764095A (en) 1994-06-03 1996-01-04 Commissariat A L'energie Atomique Method and apparatus for producing thin films by low temperature plasma-enhanced chemical vapor deposition using a rotating susceptor reactor
JP3708554B2 (en) 1995-08-04 2005-10-19 セイコーエプソン株式会社 A method of manufacturing a thin film transistor
US5844205A (en) 1996-04-19 1998-12-01 Applied Komatsu Technology, Inc. Heated substrate support structure
JP2001523889A (en) 1997-11-17 2001-11-27 シメトリックス・コーポレーション Method and apparatus for performing mist deposition of thin films
US5846332A (en) 1996-07-12 1998-12-08 Applied Materials, Inc. Thermally floating pedestal collar in a chemical vapor deposition chamber
US6114216A (en) 1996-11-13 2000-09-05 Applied Materials, Inc. Methods for shallow trench isolation
KR100252210B1 (en) 1996-12-24 2000-04-15 윤종용 Dry etching facility for manufacturing semiconductor devices
US6093645A (en) 1997-02-10 2000-07-25 Tokyo Electron Limited Elimination of titanium nitride film deposition in tungsten plug technology using PE-CVD-TI and in-situ plasma nitridation
US5994678A (en) 1997-02-12 1999-11-30 Applied Materials, Inc. Apparatus for ceramic pedestal and metal shaft assembly
US5997649A (en) 1998-04-09 1999-12-07 Tokyo Electron Limited Stacked showerhead assembly for delivering gases and RF power to a reaction chamber
CA2277394C (en) 1998-09-09 2003-10-21 Saint-Gobain Industrial Ceramics, Inc. Plasma jet chemical vapor deposition system having a plurality of distribution heads
WO2000019483A1 (en) 1998-09-30 2000-04-06 Unaxis Balzers Aktiengesellschaft Vacuum treatment chamber and method for treating surfaces
US6477980B1 (en) 2000-01-20 2002-11-12 Applied Materials, Inc. Flexibly suspended gas distribution manifold for plasma chamber
US6961490B2 (en) 2000-01-27 2005-11-01 Unaxis-Balzers Aktiengesellschaft Waveguide plate and process for its production and microtitre plate
AU5530901A (en) 2000-04-28 2001-11-12 Tokyo Electron Ltd Method and apparatus for distributing gas within high density plasma process chamber to ensure uniform plasma
TW584902B (en) 2000-06-19 2004-04-21 Applied Materials Inc Method of plasma processing silicon nitride using argon, nitrogen and silane gases
US6478625B2 (en) * 2000-07-11 2002-11-12 Bernard R. Tolmie Electrical-optical hybrid connector
JP2002064084A (en) 2000-08-17 2002-02-28 Sumitomo Metal Ind Ltd Gas introducing equipment for plasma treatment and plasma treating method
US6663025B1 (en) 2001-03-29 2003-12-16 Lam Research Corporation Diffuser and rapid cycle chamber
US6855906B2 (en) * 2001-10-16 2005-02-15 Adam Alexander Brailove Induction plasma reactor
US6986814B2 (en) 2001-12-20 2006-01-17 General Electric Company Gas distributor for vapor coating method and container
DE10211442A1 (en) 2002-03-15 2003-09-25 Aixtron Ag Device for depositing thin layers on a substrate used in the production of III-V semiconductors comprises a process chamber arranged in a reactor housing and having a base formed by a susceptor for receiving at least one substrate
US6664202B2 (en) 2002-04-18 2003-12-16 Applied Materials Inc. Mixed frequency high temperature nitride CVD process
US20040043367A1 (en) * 2002-08-30 2004-03-04 Aileen Chou Dancing machine having stepped stages
US7314652B2 (en) 2003-02-28 2008-01-01 General Electric Company Diffuser for flat panel display
US7083702B2 (en) 2003-06-12 2006-08-01 Applied Materials, Inc. RF current return path for a large area substrate plasma reactor
KR20050024949A (en) 2003-09-05 2005-03-11 삼성전자주식회사 Plasma etcher
US20050223986A1 (en) 2004-04-12 2005-10-13 Choi Soo Y Gas diffusion shower head design for large area plasma enhanced chemical vapor deposition
US8074599B2 (en) 2004-05-12 2011-12-13 Applied Materials, Inc. Plasma uniformity control by gas diffuser curvature
US7125758B2 (en) 2004-04-20 2006-10-24 Applied Materials, Inc. Controlling the properties and uniformity of a silicon nitride film by controlling the film forming precursors
US7785672B2 (en) 2004-04-20 2010-08-31 Applied Materials, Inc. Method of controlling the film properties of PECVD-deposited thin films
US8083853B2 (en) 2004-05-12 2011-12-27 Applied Materials, Inc. Plasma uniformity control by gas diffuser hole design
US20050252449A1 (en) * 2004-05-12 2005-11-17 Nguyen Son T Control of gas flow and delivery to suppress the formation of particles in an MOCVD/ALD system
US20060201074A1 (en) * 2004-06-02 2006-09-14 Shinichi Kurita Electronic device manufacturing chamber and methods of forming the same
TWI287279B (en) * 2004-09-20 2007-09-21 Applied Materials Inc Diffuser gravity support
US7238623B2 (en) * 2004-10-06 2007-07-03 Texas Instruments Incorporated Versatile system for self-aligning deposition equipment
US8733279B2 (en) * 2007-02-27 2014-05-27 Applied Materials, Inc. PECVD process chamber backing plate reinforcement

Patent Citations (99)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3830194A (en) * 1972-09-28 1974-08-20 Applied Materials Tech Susceptor support structure and docking assembly
US4455467A (en) * 1981-09-21 1984-06-19 General Electric Company Metal rack for microwave oven
US4522149A (en) * 1983-11-21 1985-06-11 General Instrument Corp. Reactor and susceptor for chemical vapor deposition process
US4809421A (en) * 1984-01-16 1989-03-07 Precision Brand Products, Inc. Slotted shim
US4563367A (en) * 1984-05-29 1986-01-07 Applied Materials, Inc. Apparatus and method for high rate deposition and etching
US5000113A (en) * 1986-12-19 1991-03-19 Applied Materials, Inc. Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process
US6040022A (en) * 1987-08-14 2000-03-21 Applied Materials, Inc. PECVD of compounds of silicon from silane and nitrogen
US4927991A (en) * 1987-11-10 1990-05-22 The Pillsbury Company Susceptor in combination with grid for microwave oven package
US4993358A (en) * 1989-07-28 1991-02-19 Watkins-Johnson Company Chemical vapor deposition reactor and method of operation
US5124635A (en) * 1990-02-15 1992-06-23 Photon Dynamics, Inc. Voltage imaging system using electro-optics
US5044943A (en) * 1990-08-16 1991-09-03 Applied Materials, Inc. Spoked susceptor support for enhanced thermal uniformity of susceptor in semiconductor wafer processing apparatus
US5820686A (en) * 1993-01-21 1998-10-13 Moore Epitaxial, Inc. Multi-layer susceptor for rapid thermal process reactors
US6338874B1 (en) * 1993-01-28 2002-01-15 Applied Materials, Inc. Method for multilayer CVD processing in a single chamber
US5611865A (en) * 1993-01-28 1997-03-18 Applied Materials, Inc. Alignment of a shadow frame and large flat substrates on a heated support
US5399387A (en) * 1993-01-28 1995-03-21 Applied Materials, Inc. Plasma CVD of silicon nitride thin films on large area glass substrates at high deposition rates
US5421893A (en) * 1993-02-26 1995-06-06 Applied Materials, Inc. Susceptor drive and wafer displacement mechanism
US5439524A (en) * 1993-04-05 1995-08-08 Vlsi Technology, Inc. Plasma processing apparatus
US5332443A (en) * 1993-06-09 1994-07-26 Applied Materials, Inc. Lift fingers for substrate processing apparatus
US5614055A (en) * 1993-08-27 1997-03-25 Applied Materials, Inc. High density plasma CVD and etching reactor
US5647911A (en) * 1993-12-14 1997-07-15 Sony Corporation Gas diffuser plate assembly and RF electrode
US5928732A (en) * 1993-12-28 1999-07-27 Applied Materials, Inc. Method of forming silicon oxy-nitride films by plasma-enhanced chemical vapor deposition
US5876838A (en) * 1994-05-09 1999-03-02 Lsi Logic Corporation Semiconductor integrated circuit processing wafer having a PECVD material layer of improved thickness uniformity
US5628869A (en) * 1994-05-09 1997-05-13 Lsi Logic Corporation Plasma enhanced chemical vapor reactor with shaped electrodes
US5567243A (en) * 1994-06-03 1996-10-22 Sony Corporation Apparatus for producing thin films by low temperature plasma-enhanced chemical vapor deposition using a rotating susceptor reactor
US5628829A (en) * 1994-06-03 1997-05-13 Materials Research Corporation Method and apparatus for low temperature deposition of CVD and PECVD films
US5500256A (en) * 1994-08-16 1996-03-19 Fujitsu Limited Dry process apparatus using plural kinds of gas
US6203622B1 (en) * 1995-09-01 2001-03-20 Asm America, Inc. Wafer support system
US6030508A (en) * 1995-11-02 2000-02-29 Taiwan Semiconductor Manufacturing Company Sputter etching chamber having a gas baffle with improved uniformity
US6232218B1 (en) * 1995-11-15 2001-05-15 Micron Technology, Inc. Etch stop for use in etching of silicon oxide
US5714408A (en) * 1995-12-14 1998-02-03 Denso Corporation Method of forming silicon nitride with varied hydrogen concentration
US6197151B1 (en) * 1996-03-01 2001-03-06 Hitachi, Ltd. Plasma processing apparatus and plasma processing method
US5614026A (en) * 1996-03-29 1997-03-25 Lam Research Corporation Showerhead for uniform distribution of process gas
US5819434A (en) * 1996-04-25 1998-10-13 Applied Materials, Inc. Etch enhancement using an improved gas distribution plate
US5766364A (en) * 1996-07-17 1998-06-16 Matsushita Electric Industrial Co., Ltd. Plasma processing apparatus
US5950925A (en) * 1996-10-11 1999-09-14 Ebara Corporation Reactant gas ejector head
US5882411A (en) * 1996-10-21 1999-03-16 Applied Materials, Inc. Faceplate thermal choke in a CVD plasma reactor
US6041733A (en) * 1996-10-24 2000-03-28 Samsung Electronics, Co., Ltd. Plasma processing apparatus protected from discharges in association with secondary potentials
US6281469B1 (en) * 1997-01-17 2001-08-28 Unaxis Balzers Aktiengesellschaft Capacitively coupled RF-plasma reactor
US6756324B1 (en) * 1997-03-25 2004-06-29 International Business Machines Corporation Low temperature processes for making electronic device structures
US6454855B1 (en) * 1997-06-13 2002-09-24 Unaxis Trading Ag Method for producing coated workpieces, uses and installation for the method
US6918352B2 (en) * 1997-06-13 2005-07-19 Unaxis Trading Ag Method for producing coated workpieces, uses and installation for the method
US6024799A (en) * 1997-07-11 2000-02-15 Applied Materials, Inc. Chemical vapor deposition manifold
US5968276A (en) * 1997-07-11 1999-10-19 Applied Materials, Inc. Heat exchange passage connection
US6079356A (en) * 1997-12-02 2000-06-27 Applied Materials, Inc. Reactor optimized for chemical vapor deposition of titanium
US20020011215A1 (en) * 1997-12-12 2002-01-31 Goushu Tei Plasma treatment apparatus and method of manufacturing optical parts using the same
US6113700A (en) * 1997-12-30 2000-09-05 Samsung Electronics Co., Ltd. Gas diffuser having varying thickness and nozzle density for semiconductor device fabrication and reaction furnace with gas diffuser
US6050506A (en) * 1998-02-13 2000-04-18 Applied Materials, Inc. Pattern of apertures in a showerhead for chemical vapor deposition
US6556536B1 (en) * 1998-04-24 2003-04-29 Unaxis Nimbus Limited Vacuum apparatus
US6182603B1 (en) * 1998-07-13 2001-02-06 Applied Komatsu Technology, Inc. Surface-treated shower head for use in a substrate processing chamber
US6619131B2 (en) * 1998-07-16 2003-09-16 Unaxis Balzers Ag Combination pressure sensor with capacitive and thermal elements
US6302057B1 (en) * 1998-09-15 2001-10-16 Tokyo Electron Limited Apparatus and method for electrically isolating an electrode in a PECVD process chamber
US6140255A (en) * 1998-12-15 2000-10-31 Advanced Micro Devices, Inc. Method for depositing silicon nitride using low temperatures
US6344420B1 (en) * 1999-03-15 2002-02-05 Kabushiki Kaisha Toshiba Plasma processing method and plasma processing apparatus
US20030089314A1 (en) * 1999-03-18 2003-05-15 Nobuo Matsuki Plasma CVD film-forming device
US6740367B2 (en) * 1999-03-18 2004-05-25 Asm Japan K.K. Plasma CVD film-forming device
US6626988B1 (en) * 1999-05-21 2003-09-30 Bayer Aktiengesellschaft Phosphate-stabilized polyurethane materials, cross-linked by condensation, method for their production and use thereof
US6123775A (en) * 1999-06-30 2000-09-26 Lam Research Corporation Reaction chamber component having improved temperature uniformity
US6626998B1 (en) * 1999-07-08 2003-09-30 Genus, Inc. Plasma generator assembly for use in CVD and PECVD processes
US6616766B2 (en) * 1999-07-08 2003-09-09 Genus, Inc. Method and apparatus for providing uniform gas delivery to substrates in CVD and PECVD processes
US6254742B1 (en) * 1999-07-12 2001-07-03 Semitool, Inc. Diffuser with spiral opening pattern for an electroplating reactor vessel
US6228438B1 (en) * 1999-08-10 2001-05-08 Unakis Balzers Aktiengesellschaft Plasma reactor for the treatment of large size substrates
US20010023742A1 (en) * 1999-08-10 2001-09-27 Unaxis Balzers Aktiengesellschaft, Fl-9496 Balzers, Furstentum Liechtenstein Plasma reactor for the treatment of large size substrates
US6371712B1 (en) * 1999-09-21 2002-04-16 Applied Komatsu Technology, Inc. Support frame for substrates
US6682630B1 (en) * 1999-09-29 2004-01-27 European Community (Ec) Uniform gas distribution in large area plasma source
US6364949B1 (en) * 1999-10-19 2002-04-02 Applied Materials, Inc. 300 mm CVD chamber design for metal-organic thin film deposition
US6548112B1 (en) * 1999-11-18 2003-04-15 Tokyo Electron Limited Apparatus and method for delivery of precursor vapor from low vapor pressure liquid sources to a CVD chamber
US6772827B2 (en) * 2000-01-20 2004-08-10 Applied Materials, Inc. Suspended gas distribution manifold for plasma chamber
US6170432B1 (en) * 2000-01-24 2001-01-09 M.E.C. Technology, Inc. Showerhead electrode assembly for plasma processing
US6873764B2 (en) * 2000-01-27 2005-03-29 Unaxis Balzers Aktiengesellschaft Method for producing a grid structure, an optical element, an evanescence field sensor plate, microtitre plate and an optical communication engineering coupler as well as a device for monitoring a wavelength
US6527908B2 (en) * 2000-03-21 2003-03-04 Sharp Kabushiki Kaisha Plasma process apparatus
US6502530B1 (en) * 2000-04-26 2003-01-07 Unaxis Balzers Aktiengesellschaft Design of gas injection for the electrode in a capacitively coupled RF plasma reactor
US6383573B1 (en) * 2000-05-17 2002-05-07 Unaxis Balzers Aktiengesellschaft Process for manufacturing coated plastic body
US6566186B1 (en) * 2000-05-17 2003-05-20 Lsi Logic Corporation Capacitor with stoichiometrically adjusted dielectric and method of fabricating same
US20030170388A1 (en) * 2000-06-23 2003-09-11 Hiroshi Shinriki Method for forming thin film and appatus for forming thin film
US6852168B2 (en) * 2000-06-24 2005-02-08 Ips Ltd. Reactor for depositing thin film on wafer
US20020006478A1 (en) * 2000-07-12 2002-01-17 Katsuhisa Yuda Method of forming silicon oxide film and forming apparatus thereof
US6447980B1 (en) * 2000-07-19 2002-09-10 Clariant Finance (Bvi) Limited Photoresist composition for deep UV and process thereof
US6593548B2 (en) * 2000-09-14 2003-07-15 Japan As Represented By President Of Japan Advanced Institute Of Science And Technology Heating element CVD system
US6916407B2 (en) * 2000-11-27 2005-07-12 Unaxis Trading Ag Target comprising thickness profiling for an RF magnetron
US20020129769A1 (en) * 2001-03-19 2002-09-19 Apex Co. Ltd. Chemical vapor deposition apparatus
US20020146879A1 (en) * 2001-04-10 2002-10-10 Applied Materials, Inc. Limiting Hydrogen ion diffusion using multiple layers of SiO2 and Si3N4
US6596576B2 (en) * 2001-04-10 2003-07-22 Applied Materials, Inc. Limiting hydrogen ion diffusion using multiple layers of SiO2 and Si3N4
US6793733B2 (en) * 2002-01-25 2004-09-21 Applied Materials Inc. Gas distribution showerhead
US20040011910A1 (en) * 2002-03-15 2004-01-22 Fuji Photo Film Co., Ltd. Methods and apparatus for manufacturing film cartridge and for feeding plate material
US20050199182A1 (en) * 2002-07-05 2005-09-15 Ulvac, Inc. Apparatus for the preparation of film
US20050133161A1 (en) * 2002-07-08 2005-06-23 Carpenter Craig M. Apparatus and method for depositing materials onto microelectronic workpieces
US20040043637A1 (en) * 2002-09-02 2004-03-04 Yukito Aota Method of forming silicon nitride deposited film
US6881684B2 (en) * 2002-09-02 2005-04-19 Canon Kabushiki Kaisha Method of forming silicon nitride deposited film
US6683216B1 (en) * 2002-11-06 2004-01-27 Eastman Chemical Company Continuous process for the preparation of amines
US20040145383A1 (en) * 2002-11-18 2004-07-29 Matthias Brunner Apparatus and method for contacting of test objects
US20040129211A1 (en) * 2003-01-07 2004-07-08 Applied Materials, Inc. Tunable gas distribution plate assembly
US6924241B2 (en) * 2003-02-24 2005-08-02 Promos Technologies, Inc. Method of making a silicon nitride film that is transmissive to ultraviolet light
US6942753B2 (en) * 2003-04-16 2005-09-13 Applied Materials, Inc. Gas distribution plate assembly for large area plasma enhanced chemical vapor deposition
US20050066898A1 (en) * 2003-09-10 2005-03-31 Unaxis Balzers Ltd. Voltage non-uniformity compensation method for high frequency plasma reactor for the treatment of rectangular large area substrates
US20060054280A1 (en) * 2004-02-23 2006-03-16 Jang Geun-Ha Apparatus of manufacturing display substrate and showerhead assembly equipped therein
US20050183827A1 (en) * 2004-02-24 2005-08-25 Applied Materials, Inc. Showerhead mounting to accommodate thermal expansion
US20060005771A1 (en) * 2004-07-12 2006-01-12 Applied Materials, Inc. Apparatus and method of shaping profiles of large-area PECVD electrodes
US20060045322A1 (en) * 2004-08-26 2006-03-02 Ian Clarke Method and system for recognizing a candidate character in a captured image
US20060060138A1 (en) * 2004-09-20 2006-03-23 Applied Materials, Inc. Diffuser gravity support

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090101069A1 (en) * 2007-10-12 2009-04-23 Suhail Anwar Rf return plates for backing plate support
US20090165722A1 (en) * 2007-12-26 2009-07-02 Jusung Engineering Co., Ltd Apparatus for treating substrate
JP2013533388A (en) * 2010-07-28 2013-08-22 アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated Shower head support structure for improved gas flow
US20120222815A1 (en) * 2011-03-04 2012-09-06 Mohamed Sabri Hybrid ceramic showerhead
US9441296B2 (en) * 2011-03-04 2016-09-13 Novellus Systems, Inc. Hybrid ceramic showerhead
KR101352923B1 (en) * 2011-09-16 2014-01-22 주식회사 에스에프에이 Chemical Vapor Deposition Apparatus for Flat Display
US9267205B1 (en) * 2012-05-30 2016-02-23 Alta Devices, Inc. Fastener system for supporting a liner plate in a gas showerhead reactor
DE102015110440A1 (en) 2014-11-20 2016-05-25 Aixtron Se CVD or PVD reactor for coating large-area substrates
WO2016079184A1 (en) * 2014-11-20 2016-05-26 Aixtron Se Cvd or pvd reactor for coating large-area substrates
WO2016079161A1 (en) 2014-11-20 2016-05-26 Aixtron Se Cvd or pvd reactor for coating large-area substrates
WO2016079232A1 (en) * 2014-11-20 2016-05-26 Aixtron Se Device for coating a large-surface-area substrate
DE102014116991A1 (en) 2014-11-20 2016-05-25 Aixtron Se CVD or PVD reactor for coating large-area substrates
CN107109648A (en) * 2014-11-20 2017-08-29 艾克斯特朗欧洲公司 Device for coating a large-surface-area substrate
CN107109649A (en) * 2014-11-20 2017-08-29 艾克斯特朗欧洲公司 CVD or PVD reactor for coating large-area substrates
CN107109650A (en) * 2014-11-20 2017-08-29 艾克斯特朗欧洲公司 Cvd or pvd reactor for coating large-area substrates

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US20100181024A1 (en) 2010-07-22
CN102251227B (en) 2013-11-27
CN102251227A (en) 2011-11-23
KR20080112961A (en) 2008-12-26
CN101333651B (en) 2011-08-24
JP5215055B2 (en) 2013-06-19
TWI389172B (en) 2013-03-11
TW200908079A (en) 2009-02-16

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