KR101352925B1 - Chemical Vapor Deposition Apparatus for Flat Display - Google Patents

Abstract

A chemical vapor deposition apparatus for a flat display is disclosed. The chemical vapor deposition apparatus for a flat panel display according to an embodiment of the present invention is disposed in an upper region in a chamber where a deposition process for a flat panel glass substrate is performed, and a plurality of passages for providing a deposition material to the surface of the glass substrate. A gas distribution plate (diffuser) in which balls are formed; A backing plate disposed side by side with the gas distribution plate in an upper region of the gas distribution plate with the gas distribution plate and the buffer space interposed therebetween; And a lift unit which connects the gas distribution plate and the backing plate in the central region of the gas distribution plate to prevent the central deflection of the gas distribution plate, wherein the lift unit is a gas among the passage holes formed in the gas distribution plate. The through holes disposed adjacent to the region connected to the distribution plate are in communication with each other inside the gas distribution plate to form a deposition material passing tunnel through which the deposition material passes.

Description

Chemical Vapor Deposition Apparatus for Flat Displays {Chemical Vapor Deposition Apparatus for Flat Display}

The present invention relates to a chemical vapor deposition apparatus for a flat panel display, and more particularly, it is possible to support the gas distribution plate with a simple and efficient structure to prevent the central deflection phenomenon of the gas distribution plate, thereby The present invention relates to a chemical vapor deposition apparatus for planar displays capable of forming a uniform deposition film on the substrate.

Flat displays are widely used in personal computers, monitors for TVs and computers.

Such a flat display is variously classified into an LCD (Liquid Crystal Display), a PDP (Plasma Display Panel) and an OLED (Organic Light Emitting Diodes).

Among them, OLEDs, called organic light emitting diodes, refer to 'self-emitting organic materials' that emit light by using electroluminescence which emits light when electric current flows through fluorescent organic compounds.

OLEDs can be driven at low voltages, can be made thin, and have a wide viewing angle and fast response speed, making them the next generation display devices that can replace current LCDs.

OLEDs can be divided into passive PMOLEDs and active AMOLEDs depending on the driving method. In particular, AMOLED is a self-emissive display that has a faster response speed than conventional displays, and has the advantage of natural color and low power consumption. In addition, if AMOLED is applied to film rather than glass substrate, it can implement the technology of flexible display.

The OLED manufacturing process includes a pattern forming process, an organic thin film deposition process, an encapsulation process, and a bonding process for attaching a substrate on which an organic thin film is deposited and a substrate that has undergone an encapsulation process.

Meanwhile, a chemical vapor deposition process (Chemical Vapor Deposition Process), which is one of the deposition processes, is a process of plasma-depositing a process gas, which is a deposition material having a high energy, onto a glass substrate by an external high-frequency power source.

A typical chemical vapor deposition apparatus for performing such a deposition process includes a chamber having a susceptor to which a glass substrate is loaded on an upper surface, an electrode (backing plate) provided in the chamber, And a gas distribution plate serving as an RF electrode and a gas inlet.

The gas distribution plate is disposed at a predetermined distance from the ground electrode (backing plate) so that a buffer space is formed between the gas distribution plate and the ground electrode (backing plate). A plurality of fine through holes are formed on the surface of the gas distribution plate.

This gas distribution plate is disposed substantially in parallel with the susceptor on which the glass substrate is loaded for maintaining the uniformity of the deposited film deposited on the glass substrate and the gap with the susceptor is also appropriately controlled.

With this configuration, when the deposition process is performed, the process gas is injected downward through the electrodes at the top of the chamber, then diffused through the buffer space, and then ejected through the plurality of through holes formed in the gas distribution plate, So that a vapor deposition film can be formed.

On the other hand, as the size of the glass substrate becomes larger, the size of the gas distribution plate for supplying the RF power and supplying the gas is also becoming larger. In such a large-scale gas distribution plate, the gas distribution plate in the process of the deposition process as described above may not only cause thermal deformation due to heat transfer by high temperature heat formed in the chamber, but also sag by its own load.

The deflection phenomenon of the gas distribution plate is intensified in the center region of the gas distribution plate, which is fixed at both ends, so that the distance from the center region of the gas distribution plate to the susceptor is shortened and the edge of the gas distribution plate to the susceptor. The distance of the phenomenon occurs.

If this happens, the plasma, a reactive gas generated at the electrode and distributed through the gas distribution plate, is concentrated and deposited in the central region of the shorter glass substrate and is relatively less deposited into the edge region of the glass substrate. Inevitably, the thickness of the deposited film on the glass substrate becomes uneven.

Thus, the prior art has proposed a method for preventing the deflection of the gas distribution plate (which is a term including deformation), an example thereof has been disclosed in the Republic of Korea Patent Publication No. 10-0833118.

The technique disclosed in the above document provides at least one reinforcing panel coupled side by side with one side of the gas distribution plate on the upper surface of the gas distribution plate, and the reinforcement panel can form a force in a direction opposite to the direction in which the gas distribution plate sags. In order to solve the deflection phenomenon of the gas distribution plate by coupling the deflection prevention part including the at least one panel support part which is coupled to the reinforcement panel and the gas distribution plate to support the gas distribution plate with respect to the reinforcement panel. That is, a technology using a CSD (Center Support Diffuser) method to support a gas distribution plate by making a reinforcement panel with a ceramic plate.

However, the following problems may occur in the chemical vapor deposition apparatus for planar display using the CSD method.

First, particles generated by the repeated tightening and tightening operations at the top of the gas distribution plate to prevent sagging of the gas distribution plate or to adjust the height of the gas distribution plate immediately fall to the gas distribution plate and distribute the gas. Blockage of holes formed in the plate, additional particle generation, and electrical arcing may occur.

Second, inaccuracy of height adjustment due to structural elastic deformation of the ceramic reinforcing panel itself may adversely affect process reproducibility between chambers during the deposition process. This is because the spacing between electrodes in PE-CVD process has the greatest influence in the process.

Third, there is a risk of breaking of the reinforced panel made of ceramics. The most prominent phenomena of the physical properties of ceramics may be the single-fracture phenomenon, which is expected to occur due to the fatigue caused by accumulated use.

Therefore, various methods have been attempted to solve these problems, but in the case of the prior art including the above literature, due to structural limitations, the gas distribution plate cannot be efficiently supported, and in particular, to prevent the central deflection phenomenon of the gas distribution plate. This is somewhat lacking in the need for an alternative.

Korea Patent Office Registered Patent No. 10-0833118

Therefore, the technical problem to be achieved by the present invention is to support the gas distribution plate with a simple and efficient structure to prevent the central deflection phenomenon of the gas distribution plate, and thus a flat surface to form a uniform deposition film on the glass substrate It is to provide a chemical vapor deposition apparatus for a display.

According to an aspect of the invention, the gas distribution plate (diffuser) is disposed in the upper region in the chamber in which the deposition process for the glass substrate for a flat panel display is progressed, and a plurality of through holes for providing a deposition material to the surface of the glass substrate is formed (diffuser) ); A backing plate disposed parallel to the gas distribution plate in an upper region of the gas distribution plate with the gas distribution plate and the buffer space interposed therebetween; And a lift unit connecting the gas distribution plate and the backing plate in a central region of the gas distribution plate to prevent the central deflection of the gas distribution plate. The through-holes disposed adjacent to the area in which the lift unit is connected to the gas distribution plate are communicated with each other inside the gas distribution plate to form a deposition material passing tunnel through which the deposition material passes. A chemical vapor deposition apparatus for a display can be provided.

The lower wall of the gas distribution plate forming the deposition material passage tunnel may further include a plurality of lower passage holes through which the passage hole and the deposition material passing through the deposition material passage tunnel fall onto the glass substrate for the flat panel display.

Each of the lower passage holes is disposed adjacent to the upper passage hole and the deposition material passage tunnel, and the deposition material passing through the upper passage hole and the deposition material passage tunnel flows in, and the shaft is formed to gradually decrease in diameter downward. Light hole; An orifice connected to a lower end of the shaft hole to allow the deposition material passing through the shaft hole to pass downward; And an enlarged hole connected to a lower end of the orifice and having a deposition material passing through the orifice falling toward the glass substrate and gradually increasing in diameter downward.

The through holes in which the deposition material passage tunnel is formed are a plurality of tunnel-type through holes arranged concentrically surrounding a region in which the lift unit is disposed among a plurality of through holes formed in the gas distribution plate. Chemical vapor deposition apparatus for a flat panel display.

Each of the plurality of tunnel-type through holes, a circular through portion; And a straight passage communicating with the circular passage and recessed closer to an area where the lift unit is disposed at one side of the circular passage.

The gas distribution plate is disposed in an upper region of the deposition material passage tunnel along a thickness direction of the gas distribution plate and is isolated from the deposition material passage tunnel to form a place where the lift unit is coupled to the gas distribution plate. The upper surface may further include a lift unit coupling groove which is processed to be recessed in the form of a groove toward the deposition material passing tunnel.

The diameter of the lift unit coupling groove may be smaller than the diameter of the through holes formed in the gas distribution plate.

The lift unit may include a first connection member connected to the lift unit coupling groove; And both ends may include a first lifter for connecting the first connecting member and the backing plate.

The first connection member is an insert bolt, and the insert bolt comprises: a first insert fixing part inserted into and fixed in the lift unit coupling groove; And a first fastening part to which a lower end of the first lifter is fastened.

The first insert fixing part may be screwed to a tab processing part formed on an inner wall of the lift unit coupling groove.

The first lifter may include a lift bolt disposed along a thickness direction of the gas distribution plate; And a lift nut provided in a recess formed in the backing plate and fastened to an upper end of the lift bolt.

The backing plate is further formed with a bolt arrangement hole communicating with the depression and formed along the thickness direction, and the lift bolt is disposed, and the connection portion between the depression portion and the bolt arrangement hole is formed inside the chamber through the bolt arrangement hole. Particle inflow prevention plate for preventing the introduction of the raw particles may be further provided.

The bolt placement hole may have a non-linear shape in which the diameter of the end region facing the gas distribution plate is wider.

It may further include a sealing plate for maintaining the vacuum coupled to the upper surface of the backing plate, the recess is disposed, the vacuum state of the chamber.

The plurality of through holes formed in the gas distribution plate may include: a first lift unit coupling through hole forming a place where the lift unit is coupled and communicating with the deposition material passing tunnel; And a plurality of second lift unit coupling through holes disposed adjacent to the first lift unit coupling through holes and communicating with the first lift unit coupling through holes.

The lift unit may include a second connection member connected to the first and second lift unit coupling through holes; And both ends may include a second lifter for connecting the second connecting member and the backing plate.

The second connecting member is inserted into the first and second lift unit coupling through holes, and then the second insert is engaged with the locking step formed in the first and second lift unit coupling through holes. Fixing part; And a second fastening part to which the lower end of the second lifter is fastened.

The second insert fixing part may be fixed to the gas distribution plate by bolts.

And a suspension support member disposed between the gas distribution plate and the backing plate to suspend the gas distribution plate with respect to the backing plate, wherein the glass substrate for a flat panel display may be an organic light emitting diode (OLED).

According to the embodiment of the present invention, the gas distribution plate can be supported with a simple and efficient structure to prevent the central deflection phenomenon of the gas distribution plate, thereby forming a uniform deposition film on the glass substrate.

1 is a schematic structural view of a chemical vapor deposition apparatus for a flat panel display according to an embodiment of the present invention.
2 is an enlarged view of a portion A in Fig.
3 is an enlarged perspective view illustrating main parts of the gas distribution plate illustrated in FIG. 1.
4 is a perspective view schematically showing a state in which a lift unit is coupled to a lift unit coupling groove of a gas distribution plate.
5 is a cross-sectional perspective view taken along the line VV of FIG. 4.
FIG. 6 is an enlarged view illustrating main parts of FIG. 2 and illustrates a state in which a lift unit is coupled to a lift unit coupling groove of a backing plate and a gas distribution plate.
7 is a partial perspective view of the suspension supporting member shown in FIG. 1.
8 is a perspective view schematically showing a lift unit coupling through hole of a gas distribution plate in a chemical vapor deposition apparatus for a flat display according to another embodiment of the present invention.
FIG. 9 is a cross-sectional perspective view taken along line VI-VI of FIG. 8.
10 is a cross-sectional view taken along the line VII-VII of FIG. 8.

In order to fully understand the present invention, operational advantages of the present invention, and objects achieved by the practice of the present invention, reference should be made to the accompanying drawings and the accompanying drawings which illustrate preferred embodiments of the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. Like reference symbols in the drawings denote like elements.

Prior to the description with reference to the drawings, any of a liquid crystal display (LCD), a plasma display panel (PDP), and an organic light emitting diode (OLED) may be used as the flat panel display. However, in the present embodiment, and the glass substrate for OLED (Organic Light Emitting Diodes) will be considered a flat display. Hereinafter, for the sake of convenience, the glass substrate for OLED will be simply referred to as a glass substrate (G).

1 is a schematic structural view of a chemical vapor deposition apparatus for a flat panel display according to an embodiment of the present invention.

As shown in this figure, the chemical vapor deposition apparatus for a flat display according to the present embodiment, the upper and lower chambers (11, 12) and the disassembly and assembly of the glass substrate (G) proceeds the deposition process and mutually And an electrode 30 disposed in the upper chamber 11 to emit a deposition material that is a predetermined silicon-based compound ion toward the glass substrate G to be deposited, and provided in the lower chamber 12 to the glass substrate G. Susceptor 20 for supporting the support and the upper end is coupled to the central region of the susceptor 20 and the lower end is exposed downward through the lower chamber 12 to support the susceptor 20 to move up and down In the central region of the column 21, the susceptor support unit 22 coupled to the column 21 to support the susceptor 20 to prevent sagging of the susceptor 20, and the gas distribution plate 31. Center deflection of the gas distribution plate 31 by connecting the gas distribution plate 31 and the backing plate 32 It includes a lift unit (50, lift unit) for preventing.

When the deposition process for the glass substrate G proceeds, the upper and lower chambers 11 and 12 are coupled to each other. That is, the upper chamber 11 is coupled to the upper portion of the lower chamber 12 by a separate crane, so that the upper and lower chambers 11 and 12 form a body to form the chamber 10.

The chamber 10 formed by the mutual coupling of the upper and lower chambers 11 and 12 is formed in the deposition space S so that the deposition space S can be maintained in a vacuum atmosphere when the deposition process is performed in the deposition space S therein. (S) is shielded from the outside.

Referring to the upper chamber 11, an electrode 30 is provided in the upper chamber 11 along the lateral direction. The electrode 30 provides the deposition material to the surface of the glass substrate G by interaction with the susceptor 20 which is the lower electrode.

The electrode 30 includes a gas distribution plate 31, a gas distribution plate 31, and a buffer space disposed in an upper region of the chamber 10 where the deposition process for the flat display glass substrate G is performed. The backing plate 32 is arranged in parallel with the gas distribution plate 31 in the upper region of the gas distribution plate 31 with (B) therebetween.

The gas distribution plate 31 is disposed in the upper region of the chamber 10 where the deposition process for the flat display glass substrate G is performed, and a plurality of passage holes for providing the deposition material to the surface of the glass substrate G. (61, see FIG. 3) is formed. Therefore, when the susceptor 20 rises during the deposition process and is disposed close to the gas distribution plate 31 at about several tens of millimeters (mm), the deposition material is discharged through a number of through holes 61 and then the glass substrate G Deposited onto the top surface.

An insulator 34 is provided between the backing plate 32 and the upper chamber 11 so that the backing plate 32 is not in direct contact with the outer wall of the upper chamber 11 and is not energized. The insulator 34 may be made of Teflon or the like. The plate support part 33 which supports the backing plate 32 with respect to the upper chamber 10 is arrange | positioned around the backing plate 32. FIG.

A suspension support member 35 is provided between the gas distribution plate 31 and the backing plate 32. The suspension supporting member 35 not only prevents the deposition material in the buffer space B from leaking to the outside, but also suspends the gas distribution plate 31, which is a heavy weight of about 400 kg or more, against the backing plate 32. .

In addition, the suspension supporting member 35 also serves to compensate for the thermal expansion of the gas distribution plate 31 heated at about 200 degrees Celsius in at least one of X, Y, and Z directions during the deposition process. . The suspension supporting member 35 will be described later with reference to FIG. 7.

An upper plate 36 is provided at the upper end of the upper chamber 11. A gas supply part 37 for supplying a process gas, a reactive gas, a cleaning gas, or other gas into the deposition space S is provided on the upper part of the upper plate 36.

A high frequency power supply unit 38 is provided around the gas supply unit 37. The high frequency power supply 38 is electrically connected to the backing plate 32 of the electrode 30 by the connection line 39. One side of the outer wall of the upper chamber 11 is provided with a reinforcing wall portion 40 for reinforcing the difference between the side wall thickness of the lower chamber 12 and the side wall thickness of the upper chamber 11.

The lower chamber 12 is a portion where the deposition process for the glass substrate G proceeds. So that the deposition space S is substantially formed in the lower chamber 12. [

On the outer wall of the lower chamber 12, a substrate entry part 13, which is a passage through which a glass substrate G enters into and out of the deposition space S, is formed by a predetermined working robot. The substrate access unit 13 may be selectively opened and closed by the gate valve 14 coupled to the periphery thereof.

A gas diffusion plate (not shown) for diffusing the gas existing in the deposition space S into the deposition space S is formed in the bottom surface area of the lower chamber 12 and a gas diffusion plate A vacuum pump (not shown) for forming a vacuum atmosphere, and the like.

The susceptor 20 is disposed laterally in the deposition space S in the lower chamber 12 to support the glass substrate G to be deposited. The susceptor 20 is usually formed of a structure larger than the area of the glass substrate G to be deposited.

The upper surface of the susceptor 20 is manufactured almost in a plate so that the glass substrate G can be loaded in a precise horizontal state. A heater (not shown) is mounted inside the susceptor 20 to heat the susceptor 20 at a predetermined deposition temperature of several hundred degrees Celsius. Power to the heater is provided through the interior of the column (21).

The upper end of the susceptor 20 is fixed to the center region of the rear surface of the susceptor 20 and the lower end of the susceptor 20 is exposed downward through the lower chamber 12 to support the susceptor 20 up and down. Are combined.

The susceptor 20 is lifted up and down in the deposition space S in the lower chamber 12. That is, when the glass substrate G is loaded, the glass substrate G is disposed on the bottom surface area in the lower chamber 12, and when the glass substrate G is loaded and the deposition process is proceeded, As shown in Fig. To this end, the column 21 coupled to the susceptor 20 is connected to an ascending / descending module 23 for ascending and descending the susceptor 20.

FIG. 2 is an enlarged view of a portion A of FIG. 1, FIG. 3 is an enlarged perspective view of a main portion of the gas distribution plate shown in FIG. 1, and FIG. 4 is a view in which the lift unit is coupled to the lift unit coupling groove of the gas distribution plate. 5 is a cross-sectional perspective view taken along line V-V of FIG. 4, and FIG. 6 is an enlarged view of a main portion of FIG. 2, in which a lift unit is coupled to a lift unit coupling groove of a backing plate and a gas distribution plate. 7 is a partial perspective view of the suspension supporting member shown in FIG. 1.

In the case of the chemical vapor deposition apparatus which proceeds with the deposition process of the glass substrate G as in the present embodiment, the gap between the upper gas distribution plate 31 and the lower susceptor 20 is important. When only the edge of 31 is fixed and supported, non-uniform deflection of the gas distribution plate 31 occurs, in particular, deflection in the central region of the gas distribution plate 31, and as a result, the glass supported on the upper surface of the susceptor 20 Deposition quality on the substrate G may be impaired.

Therefore, there is a need for a means for stably supporting the gas distribution plate 31 to prevent sagging of the gas distribution plate 31, in particular to prevent the central region of the gas distribution plate 31 from sagging. An example lift unit 50 is responsible for this.

However, in applying the lift unit 50, when the plurality of passage holes 61 provided in the gas distribution plate 31 are blocked in the region connected to the gas distribution plate 31 by the lift unit 50. The deposition material may not pass through this region, and thus, a problem may occur in that the deposition film thickness of the glass substrate G may be uneven. In order to prevent such a phenomenon from occurring, in the present embodiment, a passage in which the lift unit 50 is disposed adjacent to an area connected to the gas distribution plate 31 among the through holes 61 formed in the gas distribution plate 31. The holes 61 communicate with each other inside the gas distribution plate 31 to form a deposition material passing tunnel 80 through which the deposition material passes.

As such, the deposition material passage tunnel 80 is provided so that the deposition material introduced through the passage hole 61 other than the blocked passage hole may fall to the lower portion of the passage hole blocked through the deposition material passage tunnel 80. As a result, the deposition quality of the glass substrate G may be maintained uniformly, thereby improving the deposition quality.

Prior to the detailed description of the deposition material passing tunnel 80, which plays such a role, the structure of the plurality of passing holes 61 provided in the gas distribution plate 31 will be described first for a smooth explanation.

Referring to FIG. 3, the through hole 61 provided in the gas distribution plate 31 includes an upper passage hole 63 and a lower passage hole 64 along the thickness direction of the gas distribution plate 31. The plurality of upper through holes 63 are formed in one upper region along the thickness direction of the gas distribution plate 31, and the plurality of lower through holes 64 are upper through holes along the thickness direction of the gas distribution plate 31. It is provided to communicate with the upper through holes 63 in the lower region of the (63). In this case, the lower through holes 64 may be provided in plural per one upper through holes 63.

In the upper portion of the gas distribution plate 31, six adjacent upper through holes a1, a2, a3, a4, a5 and a6 are centered around one upper through hole a0 as shown in FIG. 3. It is arranged in a hexagonal honeycomb structure having a hexagonal shape.

Hexagonal honeycomb structure is already known as the most stable structure that can guarantee the balance and strength through the dispersion of force, it is applied to honeycomb (shock absorber). Therefore, the hexagonal honeycomb arrangement structure of the upper through hole 63 allows the mechanical strength to be maintained even when the upper through hole 63 has a larger diameter than the conventional one.

That is, the plurality of upper through holes 63 arranged in a hexagonal honeycomb structure having a diameter larger than the lower through holes 64 and one upper through hole 63 communicating with the plurality of lower through holes 64 are gas distributions. By being formed on the upper part of the plate 31, the weight of the conventional gas distribution plate 31 can be reduced to about 50 percent, while maintaining mechanical strength as in the prior art, thereby ensuring mechanical stability. In addition, by reducing the weight of the gas distribution plate 31, sagging of the gas distribution plate can be prevented, and the stability of the deposition process can be achieved, and the processing of the gas distribution plate can be made easier than before.

The lower through hole 64 may include a shaft bore 64a, an orifice 64b, and a diameter bore 64c.

The shaft diameter hole 64a is a portion where the lower passage hole 64 starts, and a portion at which the deposition material introduced into the upper passage hole 63 starts to be distributed to the plurality of lower passage holes 64. The shaft bore 64a has an inclined shape so as to decrease in diameter downward. That is, the shaft bore 64a has a tapered shape toward the orifice 64b disposed adjacent to the lower portion.

The shape of the shaft hole 64a prevents vortex that may occur when the deposition material having passed through the upper through hole 63 flows into the lower through hole 64 having a relatively small size. This makes it possible to flow uniformly and stably.

In the present embodiment, the shaft bore 64a shows a tapered shape toward the orifice 64b. However, the shaft bore 64a may be manufactured in a fallopian tube shape, a curved shape, etc., having a more gentle curve, and the viscosity of the deposition material. The angle of inclination or the degree of gradation may be different in consideration.

The orifice 64b is a small capillary tube connected to the lower end of the shaft bore 64a. The orifice 64b connects the shaft bore 64a and the diameter bore 64c to be described later, and the deposition material passed through the shaft bore 64a. It is a place that flows in and out. The orifice 64b has a relatively small diameter and shorter length than the shaft bore 64a and the enlarged bore 64c.

The shape of the orifice 64b lowers the pressure of the deposition material introduced through the shaft bore 64a and speeds up the flow rate. In addition, by adjusting the thickness and length of the orifice 64b, the introduced deposition material may be injected from the enlarged diameter hole 64c at a desired flow rate. That is, by adjusting the shape of the orifice 64b, the flow rate of the deposition material can be adjusted, thereby increasing the deposition rate and efficiency of depositing the deposition material on the glass substrate G.

The enlarged diameter hole 64c is a portion in which the fast-flowing deposition material passing through the orifice 64b is substantially sprayed onto the glass substrate G, and has a shape that gradually increases in diameter downward.

In the present embodiment, the enlarged diameter hole 64c has a tapered shape toward the upper portion and is manufactured in a shape larger than the diameter of the shaft diameter hole 64a. This shape of the enlarged diameter hole 64c allows the gas to be better injected into the entire area of the glass substrate G. The enlarged diameter hole 64c may be manufactured in various shapes such as a fallopian tube shape, a curved surface shape and the like as the above-described shaft diameter hole 64a.

On the other hand, the gas distribution plate 31 should have a suitable thickness (H) in consideration of the functional surface and strength, thermal expansion rate and the like of the injection amount, the injection area, the injection speed of the deposition material. And the length (H1) of the upper through-hole 63 may be 1.5 times or more than the length (H2) of the lower through-hole 64, the length (H1) of the upper through-hole 63 is the lower through-hole 64 The weight of the gas distribution plate 31 can be reduced more efficiently by making it 1.5 times or more than the length H2. Of course, these matters are only one embodiment, and the scope of the present invention is not limited to the numerical values thereof.

The through holes 61 in which the deposition material passing tunnel 80 is formed in the through holes 61 are lift units 50 (see FIG. 1) among the plurality of through holes 61 formed in the gas distribution plate 31. A plurality of tunnel-type through-holes 62 arranged to concentrically surround the region in which the reference) is disposed.

The deposition material passing tunnel 80 and the tunnel-type through hole 62 will be described in detail with reference to FIGS. 4 to 6.

As shown in FIG. 4, when the through holes 61 (see FIG. 3) are arranged in the hexagonal honeycomb structure in the gas distribution plate 31, six through holes may be arranged to surround the area in which the lift unit 50 is disposed. As such, the six through holes surrounding the lift unit 50 may be the tunnel type through holes 62 in which the deposition material passing tunnel 80 is formed.

In FIG. 4, only the tunnel type through hole 62 is shown among the through holes 61 provided in the gas distribution plate 31, and the remaining through holes 61 (see FIG. 3) are omitted and schematically illustrated. In addition, when the through holes 61 (see FIG. 3) are not arranged in a hexagonal honeycomb structure, the number of tunnel-type through holes 62 may not be six.

As shown in FIGS. 4 to 6, the tunnel-type through hole 62 communicates with the circular passage portion 81 and the circular passage portion 81, and the lift unit 51 is disposed at one side of the circular passage portion 81. It may include a straight through portion 82 recessed in close proximity to the area to be disposed.

In this case, a lift unit coupling groove 90 may be provided in a region in which the lift unit 50 disposed in the gas distribution plate 31 and surrounded by the tunnel-type through holes 62 is disposed. The lift unit coupling groove 90 serves to connect the lift unit 50 and the gas distribution plate 31 and is disposed in the upper region of the deposition material passing tunnel 80 along the thickness direction of the gas distribution plate 31. And the lift unit 50 is coupled to the deposition material passing tunnel 80. The lift unit coupling groove 90 is processed to be recessed in the form of a groove toward the deposition material passing tunnel 80 on the upper surface of the gas distribution plate 31.

As shown in detail in FIG. 5, the lower portion of the circular passage portion 81 of each tunnel-type through hole 62 surrounding the lift unit coupling groove 90 communicates with the lower portion of the straight passage portion 82 and lift unit. The deposition material passing tunnel 80 is formed under the coupling groove 90. That is, the tunnel-type through hole 62 is in communication with the deposition material passing tunnel 80 individually.

If only a portion of the lower portion of each tunnel-type through hole 62 communicates with the deposition material passing tunnel 80, some of the remaining walls remain from the lift unit 50 from the lift unit 50 to prevent central sagging of the gas distribution plate 31. It can serve to properly distribute the force applied to the coupling groove (90).

Looking at the process of dropping the deposition material, as shown by the arrow in FIG.

Since the lower through holes 64 located directly below the lift unit coupling groove 90 are covered by the lift unit coupling groove 90, the deposition material cannot fall vertically from the top of the gas distribution plate 31. Some of the deposition material introduced into the upper portion of the circular passage portion 81 of the tunnel-type passage hole 62 surrounding the lift unit coupling groove 90 falls vertically and passes through the deposition-type passage tunnel 81 through the straight passage portion 81. 80, and passes through the lower passage hole 64 located at the lower portion of the deposition material passage tunnel 80 to fall to the lower portion of the gas distribution plate 31.

As described above, since a portion of the deposition material introduced into the circular passage portion 81 bypasses and falls to the lower portion of the deposition material passage tunnel 80, the amount of the deposition substance falling to the lower portion of the deposition material passage tunnel 80 is the circular passage portion. It may be less than the amount of deposition material falling below the 81. In order to reduce such a difference, a straight passage 82 may be further provided.

Since the deposition material introduced into the upper portion of the straight passage portion 82 may fall vertically into the deposition material passage tunnel 80, the amount of the deposition material falling into the lower portion of the deposition substance passage tunnel 80 and the circular passage portion 81. It can reduce the difference in the amount of deposition material falling to the bottom.

As a result, a part of the through hole 61 (see FIG. 3) provided in the gas distribution plate 31 is blocked by the lift unit coupling groove 90, but the deposition material passage tunnel 80 is disposed below the lift unit coupling groove 90. As a result, the deposition material introduced into the tunnel-type through hole 62 may move and fall uniformly, thereby forming a uniform deposition film on the glass substrate G.

The diameter of the lift unit coupling groove 90 may be smaller than the diameter of the through holes 61 formed in the gas distribution plate 31. In the case of forming a small diameter, the number of through holes 61 (see FIG. 3) blocked by the lift unit coupling groove 90 can be reduced, and the through holes formed in the existing gas distribution plate 31 without special processing can be used. There is an advantage that the lift unit coupling groove 90 can be formed between the (61, see FIG. 3).

The lift unit coupling groove 90 to which the lift unit 50 is coupled is preferably disposed in a hexagonal structure during planar projection to increase stability. Because the upper through hole 63 provided in the gas distribution plate 31 as described above is arranged in a hexagonal honeycomb structure, the lift unit 50 is arranged in the same hexagonal structure as the arrangement of the upper through hole 63. This is because they are arranged in the most stable structure that can guarantee balance and strength through dispersion.

However, the present invention is not limited to the arrangement of the hexagonal structure and may be arranged in a composition having a plurality of angles, such as a square or a pentagon and an octagon, and may also be arranged in a circle.

As shown in detail in FIGS. 1 and 2 and 6, the lift unit 50 includes a backing plate and a lift unit coupling groove 90 formed in the gas distribution plate 31 in the central region of the gas distribution plate 31. By connecting the (32) serves to prevent the central deflection of the gas distribution plate (31).

That is, as shown in FIG. 1, since the suspension supporting member 35 supports the side of the gas distribution plate 31, the lift unit 50 further expands the central region of the gas distribution plate 31 as in the present embodiment. As a result, even if the gas distribution plate 31 becomes large in area, the central deflection phenomenon of the gas distribution plate 31 can be solved. Therefore, the quality of the deposited film can be improved.

The lift unit 50 includes a first connection member 53 connected to the lift unit coupling groove 90, and first lifters 52 at both ends connecting the first connection member 53 and the backing plate 32. ).

The first connecting member 53 is connected to the lift unit coupling groove 90 of the gas distribution plate 31, and both ends of the first lifter 52 are connected to the first connecting member 53 and the backing plate 32, respectively. Is connected to serve to pull the first connecting member 53 in the direction of the backing plate (32). At this time, since the lift unit 50 is to prevent the central deflection of the gas distribution plate 31, it is preferable that the lift unit 50 is provided in the center region of the gas distribution plate 31.

In this embodiment, but not necessarily the first connecting member 53 is applied to the insert bolt 53.

The insert bolt 53 as the first connecting member 53 includes a first insert fixing portion 53a which is inserted and fixed inside the lift unit coupling groove 90 and a lower end of the first lifter 52. 1 fastening part 53b is provided. As shown in FIG. 6, the first fastening portion 53b preferably has a stepped structure so that the upper portion thereof is narrowed. Because when the step is formed in the first fastening portion 53b, the lower end of the first lifter 52 is engaged with the inside of the first fastening portion 53b so that the insert bolt 53 pulls the pulling force of the first lifter 52. This is because it can communicate effectively.

As such, when the first fastening part 53b has a stepped structure so that the upper part thereof is narrowed, and is manufactured in the form of a pocket that surrounds the lower end of the first lifter 52, the first lifter 52 and the insert bolt 53 are formed. Since particles generated during friction may be isolated, particles may be prevented from entering the chamber 10 where the deposition process is performed. Therefore, the quality deterioration of the glass substrate G can be prevented.

4 and 6 illustrate the coupling manner of the first insert fixing part 53a of the insert bolt 53 and the lift unit coupling groove 90 in detail, and is schematically illustrated. 90 may form a thread (not shown) by tapping on the inner wall and a thread (not shown) on the outer wall of the first insert fixing part 53a to be screwed together. will be.

The first lifter 52 is provided in the lift bolt 56 arranged along the thickness direction of the gas distribution plate 31 and the depression 66 formed in the backing plate 32, and the upper end of the lift bolt 56. And a lift nut 57 engaged with it.

The lift bolt 56 is disposed along the thickness direction of the gas distribution plate 31. As shown in detail in FIG. 6, a recess 66 is provided in an upper region of the backing plate 32 so that the lift bolt 56 may be disposed, and a bolt arrangement hole 67 is provided below the recess 66. It is provided to penetrate this backing plate 32. Accordingly, the lift bolt 56 may be disposed over the depression 66 and the bolt placement hole 67.

The bolt placement hole 67 may have a non-linear shape in which a diameter of an end region of the lower portion of the backing plate 32, that is, the gas distribution plate 31 is wider. In this regard, the first fastening portion 53b of the insert bolt 53, which surrounds the lower end of the lift bolt 56 in a pocket shape, should have a diameter larger than that of the lift bolt 56 so that the lift bolt 56 may be formed. Backing plate to form a space in which the first fastening portion 53b of the insert bolt 53 is provided in the lower portion of the backing plate 32 because it can be transmitted to the gas distribution plate 31 while withstanding the pulling force of It may have a non-linear shape in which the diameter of the lower portion of 32 is formed wider.

The upper end 56a of the lift bolt 56 is disposed at the depression 66 of the backing plate 32, and the washer 58 is provided at the step formed by the depression 66 and the bolt placement hole 67. The upper end 56a of the 56 and the lift nut 57 are fastened to the backing plate 32.

The connection portion between the recess 66 and the bolt placement hole 67 is provided with a particle inflow prevention plate 69 which prevents particles from flowing into the chamber 10 through the bolt placement hole 67.

The particle inflow prevention plate 69 is provided to adjust the spacing between the particles and the backing plate 32 and the gas distribution plate 31 generated when the lift bolt 56 and the lift nut 57 are coupled. It is possible to form a uniform deposition film on the glass substrate (G) by preventing particles from blocking the passage hole 61 or entering the chamber 10 in which the deposition process is performed to prevent electrical arcing.

The upper surface of the backing plate 32 on which the recess 66 is disposed is provided with a vacuum holding sealing plate 68 for maintaining the vacuum state of the chamber 10.

The sealing plate 68 for vacuum holding may be made of a material such as rubber, and is preferably made of a structure that can be freely detached from a corresponding position on the upper surface of the backing plate 32. Because, when the deposition process is in progress, the gap between the backing plate 32 and the gas distribution plate 31 may be widened due to thermal deformation of the gas distribution plate 31, so that the vacuum holding sealing plate 68 after the deposition process is completed. This is because it is necessary to adjust the distance between the backing plate 32 and the gas distribution plate 31 by removing the and adjusting the lift nut (57).

Meanwhile, referring to FIGS. 1 and 7, the chemical vapor deposition apparatus according to the present invention may be provided with a corrugated suspension supporting member 35 between the backing plate 32 and the gas distribution plate 31.

In FIG. 7, a suspension support member 35 having a pleat structure is located at one side for convenience of description.

The corrugated suspension supporting member 35 suspends the gas distribution plate 31 having a heavy weight of about 400 kg with respect to the backing plate 32. That is, as shown, the gas distribution plate 31 is positioned above the chamber 10 in a state suspended from the suspension supporting member 35 of the corrugated structure.

In addition, the corrugated suspension supporting member 35 can compensate for the thermal expansion of the gas distribution plate 31, which is heated to about 200 during the deposition process, in at least one of the X-axis, Y-axis, and Z-axis directions of FIG. 7. Thermal expansion with the gas distribution plate 31 so as to. Of course, when the deposition process is completed, the gas distribution plate 31 and the suspension supporting member 35 is contracted to the original state.

As shown in detail in FIG. 7, the suspension supporting member 35 having a corrugated structure is disposed horizontally in an arrangement direction (left and right directions in FIG. 1) of the backing plate 32 and the gas distribution plate 31 and is disposed on the outer surface. Side wall portion 71 in which a plurality of corrugated grooves 72a and 72b are formed, an upper wall portion 73 formed horizontally on the plate surface of the side wall portion 71 at an upper end of the side wall portion 71, and a side wall. The lower wall part 74 formed in parallel with the upper wall part 73 in the lower end of the part 71 is provided.

The suspension supporting member 35 of the corrugation structure may be made of aluminum. That is, the side wall part 71, the upper wall part 73, and the lower wall part 74 can be integrally manufactured by bending the said position from aluminum. In this case, the upper wall portion 73 and the lower wall portion 74 may be bent at a corresponding position of the side wall portion 71 or may be formed by a method such as machining. However, in some cases, the side wall portion 71, the upper wall portion 73 and the lower wall portion 74 may be partially manufactured to be welded or bolted to each other.

A plurality of corrugation grooves 72a and 72b are formed on each side surface of the side wall portion 71. The corrugation grooves 72a and 72b have an approximately hemispherical shape. However, it is not necessary to achieve a full hemispheric shape, and a partial arc shape is sufficient.

The number of corrugation grooves 72a and 72b can be appropriately selected. However, it is preferable that the plurality of corrugation grooves 72a and 72b formed on both side surfaces of the side wall portion 71 intersect each other on both side surfaces of the side wall portion 71 so as not to be arranged on the same horizontal axis.

As such, when the plurality of corrugated grooves 72a and 72b cross each other on both sides of the side wall portion 71, the length of the overall heat flow increases within a limited height, so that the heat of the gas distribution plate 31 is increased. It is forbidden to fall.

In addition, due to the plurality of corrugated grooves 72a and 72b, the suspension supporting member 35 may increase its expansion length a little, thereby effectively coping with thermal expansion of the gas distribution plate 31. At this time, in order to ensure mechanical stability due to thermal expansion and contraction, the spacing interval between the corrugated grooves (72a, 72b) is more preferably the same. However, the spacing between the corrugation grooves 72a and 72b need not be exactly the same.

In addition, in the present embodiment, the recessed depths of the corrugation grooves 72a and 72b are formed at least smaller than half the thickness of the side wall portion 71. This is also a method for ensuring mechanical stability due to thermal expansion and contraction, and need not be limited thereto.

The upper wall portion 73 extends along the outer wall direction of the chamber 10 at the upper end of the side wall portion 71. Unlike the prior art, in the present embodiment, the upper wall portion 73 of the suspension supporting member 35 is bittenly coupled to the slit 76 formed between the backing plate 32 and the backing plate support 75. Accordingly, the suspension supporting member 35 can cope with thermal expansion of the gas distribution plate 31 because the suspension structure 35 can flow at a predetermined interval of the slit 76 together with the corrugation structure during thermal expansion of the gas distribution plate 31. do.

The lower wall portion 74 extends toward the gas distribution plate 31 at the lower end of the side wall portion 71. That is, the lower wall portion 74 extends in the opposite direction to the upper wall portion 73. The lower wall portion 74 is further provided with a valley portion 77 that prevents interference with the gas distribution plate 31 that is thermally expanded at a position adjacent to the side wall portion 71.

The lower wall portion 74 also has a structure that is inserted into the groove 31a formed on the side surface of the gas distribution plate 31 similarly to the upper wall portion 73. However, since the gas distribution plate 31 and the suspension supporting member 35 having a corrugated structure flow while thermally expanding, the lower wall portion 74 may be separated from the groove 31a.

In order to prevent this, the lower wall portion 74 and the gas distribution plate 31 are further provided with a release blocking portion 78 for preventing the lower wall portion 74 from being separated from the groove 31a.

Hereinafter, the operation of the chemical vapor deposition apparatus for a flat panel display having such a configuration will be described.

First, the glass substrate G to be deposited is transferred by a robot arm (not shown) while the susceptor 20 is lowered to the lower region of the lower chamber 12 by the elevating module 23. It is introduced through the portion 13 and disposed above the susceptor 20.

At this time, the upper end of the lift pin 24 is protruded a predetermined height to the upper surface of the susceptor 20, the robot arm is lifted up after lifting the glass substrate (G) on the lift pins (24). When the robot arm is taken out, the substrate entry part 13 is closed, and the interior of the upper and lower chambers 11 and 12 is maintained in a vacuum atmosphere and filled with process gases (SiH4, NH3, etc.) necessary for deposition.

Next, for the progress of the deposition process, the ascending / descending module 23 operates to float the susceptor 20. Then, the lift pin 24 is lowered, and the glass substrate G is loaded onto the upper surface of the susceptor 20 while being closely attached thereto.

When the susceptor 20 floats by a predetermined distance, the operation of the lifting / lowering module 23 is stopped and the glass substrate is positioned directly below the gas distribution plate 31. At this time, the susceptor 20 is already heated to about 200 to 400 degrees centigrade.

Then, power is applied through the electrode 30 insulated by the insulator 34. A deposition material, which is a silicon compound ion, is ejected through the gas distribution plate 31 having numerous orifices formed thereon, and reaches the glass substrate G to be deposited on the glass substrate G. [

On the other hand, in the operation as described above, the edge region of the gas distribution plate 31 is supported by the suspension supporting member 35 and the central region of the gas distribution plate 31 is supported by the lift unit 50, the deposition process By minimizing the deflection of the gas distribution plate 31 due to thermal expansion during the expansion, the flatness of the gas distribution plate 31 with respect to the susceptor 20 can be more easily observed while preventing the gas distribution plate 31 from sagging and adjusting height. By maintaining effectively, it is possible to form a uniform deposition film on the glass substrate (G).

As described above, according to the present embodiment, the gas distribution plate 31 can be supported with a simple and efficient structure to prevent the central deflection phenomenon of the gas distribution plate 31, and thus, the glass substrate G is uniform. One vapor deposition film can be formed.

FIG. 8 is a perspective view schematically illustrating a lift unit coupling through hole of a gas distribution plate in a chemical vapor deposition apparatus for a planar display according to another embodiment of the present invention, and FIG. 9 is a cross-sectional perspective view taken along line VI-VI of FIG. 8. 10 is a cross-sectional view taken along the line VII-VII of FIG. 8.

Referring to these drawings, the lift unit 50 'provided in the planar display chemical vapor deposition apparatus of this embodiment has a second connecting member 53' connected to the gas distribution plate 31 side, and both ends thereof have a second end. It may include a second lifter (52 ') connecting the connecting member (53') and the backing plate (32).

In the above-described embodiment, a separate lift unit coupling groove 90 (see FIG. 5) is made in the gas distribution plate 31, and the first connecting member 53 (see FIG. 6) of the lift unit 50 (see FIG. 6). Is connected to the lift unit coupling groove 90 (see FIG. 5), but in this embodiment, a plurality of through holes forming the gas distribution plate 31 instead of forming the unit coupling groove 90 (see FIG. 5). The structure of some of the reference numerals 61 and 3 is improved to allow the second connecting member 53 'of the lift unit 50' to be connected.

That is, in the chemical vapor deposition apparatus for planar display according to the present embodiment, a plurality of through holes 61 and 3 formed in the gas distribution plate 31 are connected to the lift unit 50 ′ to the gas distribution plate 31. Some of the), the first lift unit coupling through hole (100) and the first lift unit coupling through hole (100) forming a place where the lift unit 50 'is coupled and in communication with the deposition material passage tunnel (80) It may include a plurality of second lift unit coupling through hole 101 disposed adjacent to and communicating with the first lift unit coupling through hole (100).

As the first lift unit coupling through hole 100 communicates with the second lift unit coupling through hole 101 adjacent thereto, the second connecting member 53 ′ of the lift unit 50 ′ is easily connected thereto. Can be combined.

The second connecting member 53 ′ is inserted into the first and second lift unit coupling through holes 100 and 101, and then is formed in the first and second lift unit coupling through holes 100 and 101. And a second insert fixing portion 53a 'engaged with the 104 and a second fastening portion 53b' fastened to the lower end of the second lifter 52 '.

The second insert fixing portion 53a 'has a long rod shape. As such, the first lift unit coupling passage hole 100 and the second lift unit adjacent thereto are coupled to each other so that the second insert fixing portion 53a 'having a rod shape is inserted into the gas distribution plate 31 to be engaged. The through hole 101 is formed in communication. As the first and second lift unit coupling through holes 100 and 101 communicate with each other, a rod-shaped second insert fixing portion 53a 'may be inserted into this space, and the deposition material passage tunnel 80 therein may be inserted therein. Can be rotated on.

In other words, the second insert fixing part 53a 'is inserted into the first and second lift unit coupling through holes 100 and 101 which are in long communication, and then the second insert fixing part 53a' of the first and second lift unit coupling through holes 100 and 101 is formed. After being rotated inside, the first and second lift unit may be coupled to the engaging jaw 104 formed in the coupling through holes (100, 101).

At this time, the second insert fixing part 53a 'inserted into the first and second lift unit coupling through holes 100 and 101 is approximately 90 degrees inside the first and second lift unit coupling through holes 100 and 101. In order to be rotated, the deposition material passing tunnel 80 may be formed in a circular shape when viewed from the top, and the upper wall of the deposition material passing tunnel 80 forms a locking jaw 104 to fix the second insert. The place where the 53a 'is engaged can be formed.

In summary, in the present embodiment, the first lift unit coupling through hole 100 and the second lift fixing portion 53a 'having a rod shape are inserted into the gas distribution plate 31 to be engaged. The neighboring second lift unit coupling through holes 101 are in communication with each other.

Unlike the drawings, the second insert fixing part 53a 'may be processed into a protruding shape so that the second insert fixing part 53a' may be engaged with the locking step 104 formed in the first and second lift unit coupling through holes 100 and 101. Can be.

A plurality of bolt coupling parts 102 may be provided around the first lift unit coupling through hole 100. This is because the second insert fixing portion 53a 'may be separated from the locking jaw 104 even when the second insert fixing portion 53a' is engaged with the locking jaw 104 by vibration or shock. In order to prevent the phenomenon, the second insert fixing part 53a 'is fixed by fastening the bolt 103 with the bolt fastening part 102. Threads may be formed on the protrusion of the second insert fixing part 53a 'for bolting by tapping.

Both ends of the second lifter 52 'are connected to the second connecting member 53' and the backing plate 32, respectively, and serve to pull the second connecting member 53 'toward the backing plate 32. Since the second lifter 52 'has the same structure and role as the first lifter 52 (refer to FIG. 6) of the above-described embodiment, redundant description is omitted.

Even if the structure of the present embodiment is applied, it is possible to prevent the central deflection phenomenon of the gas distribution plate 31, thereby forming a uniform deposition film on the glass substrate (G).

It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the invention. Accordingly, such modifications or variations are intended to fall within the scope of the appended claims.

10: chamber 11: upper chamber
12 lower chamber 13 substrate entry part
20: susceptor 21: column
22: susceptor support unit 23: lifting module
30: Electrode 31: Gas distribution plate
32: backing plate 35: suspension support member
37: gas supply unit 38: high frequency power supply unit
40: reinforcing wall portion 50: lift unit
52: first lifter 53: insert bolt
56: lift bolt 57: lift nut
58: washer 61: through hole
62: tunnel type through hole 63: upper through hole
64: lower passage hole 66: depression
67: bolt arrangement hole 68: particle inflow prevention plate
69: sealing plate for vacuum holding 71: side wall
73: upper wall portion 74: lower wall portion
76: slit 78: departure stop
80: tunnel through the deposition material 81: circular passage
82: straight passage 90: lift unit coupling groove
100: first lift unit coupling through hole 101: second lift unit coupling through hole
102 bolt connection 103 bolt
104: jamming jaw

Claims (19)

A gas distribution plate disposed in an upper region of a chamber in which a deposition process for a flat panel display glass is performed and having a plurality of through holes for providing a deposition material to a surface of the glass substrate;
A backing plate disposed parallel to the gas distribution plate in an upper region of the gas distribution plate with the gas distribution plate and the buffer space interposed therebetween; And
A lift unit connecting the gas distribution plate and the backing plate in the central region of the gas distribution plate to prevent the central deflection of the gas distribution plate;
Among the through holes formed in the gas distribution plate, the through holes disposed adjacent to a region where the lift unit is connected to the gas distribution plate are in communication with each other inside the gas distribution plate to deposit the deposition material. Forming a material passage tunnel,
The gas distribution plate is disposed in an upper region of the deposition material passage tunnel along a thickness direction of the gas distribution plate and is isolated from the deposition material passage tunnel to form a place where the lift unit is coupled, and an upper surface of the gas distribution plate. And a lift unit coupling groove which is processed to be recessed in the form of a groove toward the deposition material passing tunnel in the planar display. The method of claim 1,
The lower wall of the gas distribution plate forming the deposition material passing tunnel is characterized in that the plurality of lower through-holes through which the through-hole and the deposition material via the deposition material passing tunnel is dropped into the glass substrate for the flat display is further formed. Chemical vapor deposition apparatus for a flat panel display. 3. The method of claim 2,
Each of the lower through holes,
An axis diameter hole disposed adjacent to the upper passage hole and the deposition material passage tunnel, the deposition material passing through the upper passage hole and the deposition material passage tunnel is introduced, and the diameter hole gradually decreases in diameter downward;
An orifice connected to a lower end of the shaft hole to allow the deposition material passing through the shaft hole to pass downward; And
And a diameter expansion hole connected to a lower end of the orifice and passing through the orifice, the deposition material falling toward the glass substrate and having a diameter gradually increasing toward the lower side of the orifice. The method of claim 1,
The through holes in which the deposition material passage tunnel is formed are a plurality of tunnel-type through holes arranged concentrically surrounding a region in which the lift unit is disposed among a plurality of through holes formed in the gas distribution plate. Chemical vapor deposition apparatus for a flat panel display. 5. The method of claim 4,
Each of the plurality of tunnel-type through holes,
Circular passage; And
And a straight pass portion communicating with the circular pass portion and recessed closer to an area where the lift unit is disposed on one side of the circular pass portion. delete The method of claim 1,
And a diameter of the lift unit coupling groove is smaller than a diameter of the through holes formed in the gas distribution plate. The method of claim 1,
The lift unit includes:
A first connection member connected to the lift unit coupling groove; And
Chemical vapor deposition apparatus for a flat panel display, characterized in that both ends include a first lifter for connecting the first connecting member and the backing plate. 9. The method of claim 8,
The first connection member is an insert bolt,
The insert bolt,
A first insert fixing part inserted into and fixed in the lift unit coupling groove; And
And a first fastening part to which a lower end of the first lifter is fastened. 10. The method of claim 9,
And the first insert fixing part is screwed to a tab processing part formed on an inner wall of the lift unit coupling groove. 9. The method of claim 8,
The first lifter,
A lift bolt disposed along a thickness direction of the gas distribution plate; And
And a lift nut provided in a recess formed in the backing plate and fastened to an upper end of the lift bolt. 12. The method of claim 11,
The backing plate is further formed with a bolt arrangement hole in communication with the recess and formed along the thickness direction, the lift bolt is disposed,
And a particle inflow preventing plate for preventing particles from flowing into the chamber through the bolt placement hole at the connection portion between the recess and the bolt placement hole. The method of claim 12,
And the bolt placement hole has a non-linear shape in which the diameter of the end region toward the gas distribution plate is wider. 12. The method of claim 11,
And a vacuum holding sealing plate coupled to an upper surface of the backing plate on which the recess is disposed, and maintaining a vacuum state of the chamber. The method of claim 1,
A plurality of through holes formed in the gas distribution plate,
A first lift unit coupling through hole forming a place to which the lift unit is coupled and communicating with the deposition material passage tunnel; And
And a plurality of second lift unit coupling through holes disposed adjacent to the first lift unit coupling through holes and in communication with the first lift unit coupling through holes. 16. The method of claim 15,
The lift unit includes:
A second connecting member connected to the first and second lift unit coupling through holes; And
Chemical vapor deposition apparatus for a flat panel display, characterized in that both ends include a second lifter for connecting the second connecting member and the backing plate. 17. The method of claim 16,
And the second connecting member
A second insert fixing part engaged with the engaging jaw formed in the first and second lift unit coupling through holes after being inserted into the first and second lift unit coupling through holes; And
And a second fastening part to which a lower end of the second lifter is fastened. 18. The method of claim 17,
And the second insert fixing part is fixed to the gas distribution plate by bolts. The method of claim 1,
And a suspension support member disposed between the gas distribution plate and the backing plate to suspend the gas distribution plate with respect to the backing plate.
The flat substrate glass substrate is a chemical vapor deposition apparatus for a flat display, characterized in that the OLED (Organic Light Emitting Diodes).

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