KR101352923B1 - Chemical Vapor Deposition Apparatus for Flat Display - Google Patents

Abstract

A chemical vapor deposition apparatus for a flat display is disclosed. The chemical vapor deposition apparatus for a flat panel display according to an embodiment of the present invention is disposed in an upper region in a chamber where a deposition process for a flat panel glass substrate is performed, and a plurality of passages for providing a deposition material to the surface of the glass substrate. A gas distribution plate (diffuser) in which balls are formed; A backing plate disposed side by side with the gas distribution plate in an upper region of the gas distribution plate with the gas distribution plate and the buffer space interposed therebetween; And a lift unit connecting the backing plate and the plurality of selected through holes selected from the through holes in the central region of the gas distribution plate to prevent the central deflection of the gas distribution plate.

Description

Chemical Vapor Deposition Apparatus for Flat Displays {Chemical Vapor Deposition Apparatus for Flat Display}

The present invention relates to a chemical vapor deposition apparatus for a flat panel display, and more particularly, it is possible to support the gas distribution plate with a simple and efficient structure to prevent the central deflection phenomenon of the gas distribution plate, thereby The present invention relates to a chemical vapor deposition apparatus for planar displays capable of forming a uniform deposition film on the substrate.

Flat displays are widely used in personal computers, monitors for TVs and computers.

Such a flat display is variously classified into an LCD (Liquid Crystal Display), a PDP (Plasma Display Panel) and an OLED (Organic Light Emitting Diodes).

Among them, OLEDs, called organic light emitting diodes, refer to 'self-emitting organic materials' that emit light by using electroluminescence which emits light when electric current flows through fluorescent organic compounds.

OLEDs can be driven at low voltages, can be made thin, and have a wide viewing angle and fast response speed, making them the next generation display devices that can replace current LCDs.

OLEDs can be divided into passive PMOLEDs and active AMOLEDs depending on the driving method. In particular, AMOLED is a self-emissive display that has a faster response speed than conventional displays, and has the advantage of natural color and low power consumption. In addition, if AMOLED is applied to film rather than glass substrate, it can implement the technology of flexible display.

The OLED manufacturing process includes a pattern forming process, an organic thin film deposition process, an encapsulation process, and a bonding process for attaching a substrate on which an organic thin film is deposited and a substrate that has undergone an encapsulation process.

Meanwhile, a chemical vapor deposition process (Chemical Vapor Deposition Process), which is one of the deposition processes, is a process of plasma-depositing a process gas, which is a deposition material having a high energy, onto a glass substrate by an external high-frequency power source.

A typical chemical vapor deposition apparatus for performing such a deposition process includes a chamber having a susceptor to which a glass substrate is loaded on an upper surface, an electrode (backing plate) provided in the chamber, And a gas distribution plate serving as an RF electrode and a gas inlet.

The gas distribution plate is disposed at a predetermined distance from the ground electrode (backing plate) so that a buffer space is formed between the gas distribution plate and the ground electrode (backing plate). A plurality of fine through holes are formed on the surface of the gas distribution plate.

This gas distribution plate is disposed substantially in parallel with the susceptor on which the glass substrate is loaded for maintaining the uniformity of the deposited film deposited on the glass substrate and the gap with the susceptor is also appropriately controlled.

With this configuration, when the deposition process is performed, the process gas is injected downward through the electrodes at the top of the chamber, then diffused through the buffer space, and then ejected through the plurality of through holes formed in the gas distribution plate, So that a vapor deposition film can be formed.

On the other hand, as the size of the glass substrate becomes larger, the size of the gas distribution plate for supplying the RF power and supplying the gas is also becoming larger. In such a large-scale gas distribution plate, the gas distribution plate in the process of the deposition process as described above may not only cause thermal deformation due to heat transfer by high temperature heat formed in the chamber, but also sag by its own load.

The deflection phenomenon of the gas distribution plate is intensified in the center region of the gas distribution plate, which is fixed at both ends, so that the distance from the center region of the gas distribution plate to the susceptor is shortened and the edge of the gas distribution plate to the susceptor. The distance of the phenomenon occurs.

If this happens, the plasma, a reactive gas generated at the electrode and distributed through the gas distribution plate, is concentrated and deposited in the central region of the shorter glass substrate and is relatively less deposited into the edge region of the glass substrate. Inevitably, the thickness of the deposited film on the glass substrate becomes uneven.

Thus, the prior art has proposed a method for preventing the deflection of the gas distribution plate (which is a term including deformation), an example thereof has been disclosed in the Republic of Korea Patent Publication No. 10-0833118.

The technique disclosed in the above document provides at least one reinforcing panel coupled side by side with one side of the gas distribution plate on the upper surface of the gas distribution plate, and the reinforcement panel can form a force in a direction opposite to the direction in which the gas distribution plate sags. In order to solve the deflection phenomenon of the gas distribution plate by coupling the deflection prevention part including the at least one panel support part which is coupled to the reinforcement panel and the gas distribution plate to support the gas distribution plate with respect to the reinforcement panel. That is, a technology using a CSD (Center Support Diffuser) method to support a gas distribution plate by making a reinforcement panel with a ceramic plate.

However, there are the following problems in the chemical vapor deposition apparatus for planar display using the CSD method.

First, particles generated by the repeated tightening and tightening operations at the top of the gas distribution plate to prevent sagging of the gas distribution plate or to adjust the height of the gas distribution plate immediately fall to the gas distribution plate and distribute the gas. Blockage of holes formed in the plate, additional particle generation, and electrical arcing may occur.

Second, inaccuracy of height adjustment due to structural elastic deformation of the ceramic reinforcing panel itself may adversely affect process reproducibility between chambers during the deposition process. This is because the spacing between electrodes in PE-CVD process has the greatest influence in the process.

Third, there is a risk of breaking of the reinforced panel made of ceramics. The most prominent phenomena of the physical properties of ceramics may be the single-fracture phenomenon, which is expected to occur due to the fatigue caused by accumulated use.

Therefore, various methods have been attempted to solve these problems, but in the case of the prior art including the above literature, due to structural limitations, the gas distribution plate cannot be efficiently supported, and in particular, to prevent the central deflection phenomenon of the gas distribution plate. This is somewhat lacking in the need for an alternative.

Korea Patent Office Registered Patent No. 10-0833118

Therefore, the technical problem to be achieved by the present invention is to support the gas distribution plate with a simple and efficient structure to prevent the central deflection phenomenon of the gas distribution plate, and thus a flat surface to form a uniform deposition film on the glass substrate It is to provide a chemical vapor deposition apparatus for a display.

According to an aspect of the invention, the gas distribution plate (diffuser) is disposed in the upper region in the chamber in which the deposition process for the glass substrate for a flat panel display is progressed, and a plurality of through holes for providing a deposition material to the surface of the glass substrate is formed (diffuser) ); A backing plate disposed parallel to the gas distribution plate in an upper region of the gas distribution plate with the gas distribution plate and the buffer space interposed therebetween; And a lift unit connecting a plurality of selected through holes selected from the through holes and the backing plate in the central region of the gas distribution plate to prevent the central sag of the gas distribution plate. A chemical vapor deposition apparatus for a display can be provided.

The lift unit may include a connection member connected to the selection through hole; And both ends may include a lifter for connecting the connecting member and the backing plate.

The connection member may be an insert bolt, and the insert bolt may include an insert fixing part inserted into and fixed inside the selection through hole; And a fastening part to which the lower end of the lifter is fastened.

The insert fixing part may be screwed to a tab processing part formed on an inner wall of the selection through hole.

The insert fixing part may be coupled to a locking jaw formed in the selection through hole.

At least one passage hole adjacent to the selection passage hole has a space in which an upper region thereof communicates with the selection passage hole for insertion of the insert fixing portion, and one side of the lower region provides the locking step together with the selection passage hole. Can be formed.

The lifter may include a lift bolt disposed along a thickness direction of the gas distribution plate and a lift nut provided in a recess formed in the backing plate and fastened to an upper end of the lift bolt.

The backing plate is further formed with a bolt arrangement hole communicating with the depression and formed along the thickness direction, and the lift bolt is disposed, and the connection portion between the depression portion and the bolt arrangement hole is formed inside the chamber through the bolt arrangement hole. Particle inflow prevention plate for preventing the introduction of the raw particles may be further provided.

The bolt placement hole may have a non-linear shape in which the diameter of the end region facing the gas distribution plate is wider.

It may further include a sealing plate for maintaining the vacuum coupled to the upper surface of the backing plate, the recess is disposed, the vacuum state of the chamber.

The through holes may include a plurality of upper through holes formed in one upper region along a thickness direction of the gas distribution plate; And a plurality of lower through holes formed in the lower regions of the upper through holes along the thickness direction of the gas distribution plate and communicating with the upper through holes, wherein the lower through holes are provided in plurality per one of the upper through holes. Can be.

The lower passage hole may include a shaft hole disposed adjacent to the upper passage hole to allow the deposition material passing through the upper passage hole to flow in, and the diameter of the lower passage hole gradually decreasing downwardly; An orifice connected to a lower end of the shaft hole to allow the deposition material passing through the shaft hole to pass downward; And an enlarged hole connected to a lower end of the orifice and having a deposition material passing through the orifice falling toward the glass substrate and gradually increasing in diameter downward.

The plurality of selection through holes may be arranged in a hexagonal structure in the plane projection.

And a suspension support member disposed between the gas distribution plate and the backing plate to suspend the gas distribution plate with respect to the backing plate, wherein the glass substrate for a flat panel display may be an organic light emitting diode (OLED).

According to the embodiment of the present invention, the gas distribution plate can be supported with a simple and efficient structure to prevent the central deflection phenomenon of the gas distribution plate, thereby forming a uniform deposition film on the glass substrate.

1 is a schematic structural view of a chemical vapor deposition apparatus for a flat panel display according to an embodiment of the present invention.
2 is an enlarged view of a portion A in Fig.
FIG. 3 is an enlarged view illustrating main parts of FIG. 2 and illustrates a state in which a lift unit is coupled to a selective through hole of a backing plate and a gas distribution plate.
4 is an enlarged perspective view of main parts of the gas distribution plate illustrated in FIG. 1.
5 is a schematic perspective view of a gas distribution plate in which a plurality of selective through holes are arranged in a hexagonal structure and combined with a lift unit.
6 is a partial perspective view of the suspension supporting member shown in FIG.
FIG. 7 is a view illustrating a lift unit coupled to a selective through hole of a backing plate and a gas distribution plate in a chemical vapor deposition apparatus for a planar display according to another exemplary embodiment of the present invention.

In order to fully understand the present invention, operational advantages of the present invention, and objects achieved by the practice of the present invention, reference should be made to the accompanying drawings and the accompanying drawings which illustrate preferred embodiments of the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. Like reference symbols in the drawings denote like elements.

Prior to the description with reference to the drawings, any of a liquid crystal display (LCD), a plasma display panel (PDP), and an organic light emitting diode (OLED) may be used as the flat panel display. However, in the present embodiment, and the glass substrate for OLED (Organic Light Emitting Diodes) will be considered a flat display. Hereinafter, for the sake of convenience, the glass substrate for OLED will be simply referred to as a glass substrate (G).

1 is a schematic structural view of a chemical vapor deposition apparatus for a flat panel display according to an embodiment of the present invention.

As shown in this figure, the chemical vapor deposition apparatus for a flat display according to the present embodiment, the upper and lower chambers (11, 12) and the disassembly and assembly of the glass substrate (G) proceeds the deposition process and mutually And an electrode 30 disposed in the upper chamber 11 to emit a deposition material that is a predetermined silicon-based compound ion toward the glass substrate G to be deposited, and provided in the lower chamber 12 to the glass substrate G. Susceptor 20 for supporting the support and the upper end is coupled to the central region of the susceptor 20 and the lower end is exposed downward through the lower chamber 12 to support the susceptor 20 to move up and down The center sag of the susceptor support unit 22 and the gas distribution plate 31 which are coupled to the column 21 and the column 21 to support the susceptor 20 to prevent the susceptor 20 from sagging. And a lift unit 50 to block.

When the deposition process for the glass substrate G proceeds, the upper and lower chambers 11 and 12 are coupled to each other. That is, the upper chamber 11 is coupled to the upper portion of the lower chamber 12 by a separate crane, so that the upper and lower chambers 11 and 12 form a body to form the chamber 10.

The chamber 10 formed by the mutual coupling of the upper and lower chambers 11 and 12 is formed in the deposition space S so that the deposition space S can be maintained in a vacuum atmosphere when the deposition process is performed in the deposition space S therein. (S) is shielded from the outside.

Referring to the upper chamber 11, an electrode 30 is provided in the upper chamber 11 along the lateral direction. The electrode 30 provides the deposition material to the surface of the glass substrate G by interaction with the susceptor 20 which is the lower electrode.

The electrode 30 includes a gas distribution plate 31, a gas distribution plate 31, and a buffer space disposed in an upper region of the chamber 10 where the deposition process for the flat display glass substrate G is performed. It consists of a backing plate 32 arranged side by side with the gas distribution plate 31 in the upper region of the gas distribution plate 31 with (B) in between.

The gas distribution plate 31 is disposed in the upper region of the chamber 10 where the deposition process for the flat display glass substrate G is performed, and a plurality of passage holes for providing the deposition material to the surface of the glass substrate G. (61, see Figs. 4 and 5) is formed. Therefore, when the susceptor 20 rises during the deposition process and is disposed close to the gas distribution plate 31 at about several tens of millimeters (mm), the deposition material is discharged through a number of through holes 61 and then the glass substrate G Deposited onto the top surface.

An insulator 34 is provided between the backing plate 32 and the upper chamber 11 so that the backing plate 32 is not in direct contact with the outer wall of the upper chamber 11 and is not energized. The insulator 34 may be made of Teflon or the like. The plate support part 33 which supports the backing plate 32 with respect to the upper chamber 10 is arrange | positioned around the backing plate 32. FIG.

A suspension support member 35 is provided between the gas distribution plate 31 and the backing plate 32. The suspension supporting member 35 not only prevents the deposition material in the buffer space B from leaking to the outside, but also suspends the gas distribution plate 31, which is a heavy weight of about 400 kg or more, against the backing plate 32. .

In addition, the suspension supporting member 35 also serves to compensate for the thermal expansion of the gas distribution plate 31 heated at about 200 degrees Celsius in at least one of X, Y, and Z directions during the deposition process. . The suspension supporting member 35 will be described later with reference to FIG. 6.

An upper plate 36 is provided at the upper end of the upper chamber 11. A gas supply part 37 for supplying a process gas, a reactive gas, a cleaning gas, or other gas into the deposition space S is provided on the upper part of the upper plate 36.

A high frequency power supply unit 38 is provided around the gas supply unit 37. The high frequency power supply 38 is electrically connected to the backing plate 32 of the electrode 30 by the connection line 39. One side of the outer wall of the upper chamber 11 is provided with a reinforcing wall portion 40 for reinforcing the difference between the side wall thickness of the lower chamber 12 and the side wall thickness of the upper chamber 11.

The lower chamber 12 is a portion where the deposition process for the glass substrate G proceeds. So that the deposition space S is substantially formed in the lower chamber 12. [

On the outer wall of the lower chamber 12, a substrate entry part 13, which is a passage through which a glass substrate G enters into and out of the deposition space S, is formed by a predetermined working robot. The substrate access unit 13 may be selectively opened and closed by the gate valve 14 coupled to the periphery thereof.

A gas diffusion plate (not shown) for diffusing the gas existing in the deposition space S into the deposition space S is formed in the bottom surface area of the lower chamber 12 and a gas diffusion plate A vacuum pump (not shown) for forming a vacuum atmosphere, and the like.

The susceptor 20 is disposed laterally in the deposition space S in the lower chamber 12 to support the glass substrate G to be deposited. The susceptor 20 is usually formed of a structure larger than the area of the glass substrate G to be deposited.

The upper surface of the susceptor 20 is manufactured almost in a plate so that the glass substrate G can be loaded in a precise horizontal state. A heater (not shown) is mounted inside the susceptor 20 to heat the susceptor 20 at a predetermined deposition temperature of several hundred degrees Celsius. Power to the heater is provided through the interior of the column (21).

The upper end of the susceptor 20 is fixed to the center region of the rear surface of the susceptor 20 and the lower end of the susceptor 20 is exposed downward through the lower chamber 12 to support the susceptor 20 up and down. Are combined.

The susceptor 20 is lifted up and down in the deposition space S in the lower chamber 12. That is, when the glass substrate G is loaded, the glass substrate G is disposed on the bottom surface area in the lower chamber 12, and when the glass substrate G is loaded and the deposition process is proceeded, As shown in Fig. To this end, the column 21 coupled to the susceptor 20 is connected to an ascending / descending module 23 for ascending and descending the susceptor 20.

On the other hand, in the case of the chemical vapor deposition apparatus that proceeds the deposition process of the glass substrate (G) as in this embodiment, the gap between the upper gas distribution plate 31 and the lower susceptor 20 is important, the gas distribution as in the prior art If only the edge portion of the plate 31 is fixed and supported, non-uniform deflection of the gas distribution plate 31 occurs, particularly in the central region of the gas distribution plate 31, and as a result, the upper surface of the susceptor 20 is supported. Deposition quality on the glass substrate (G) may be impaired.

Therefore, there is a need for a means for stably supporting the gas distribution plate 31 to prevent sagging of the gas distribution plate 31, in particular to prevent the central region of the gas distribution plate 31 from sagging. The lift unit 50 is in charge. The lift unit 50 will be described in detail with reference to FIGS. 2 to 6.

2 is an enlarged view of a portion A of FIG. 1, FIG. 3 is an enlarged view of a main portion of FIG. 5 is an enlarged perspective view of a main portion of the gas distribution plate, and FIG. 5 is a schematic perspective view of the gas distribution plate in which a plurality of selection through holes are arranged in a hexagonal structure and combined with a lift unit, and FIG. 6 is a view of the suspension supporting member shown in FIG. Partial perspective view.

As shown in detail in these figures, the lift unit 50 is selected from a plurality of through holes 61 (see FIGS. 4 and 5) formed in the gas distribution plate 31 in the central region of the gas distribution plate 31. The selection passage hole 62 and the backing plate 32 are connected to serve to prevent the central deflection of the gas distribution plate 31.

That is, as shown in FIG. 1, since the suspension supporting member 35 supports the side of the gas distribution plate 31, the lift unit 50 further expands the central region of the gas distribution plate 31 as in the present embodiment. As a result, even if the gas distribution plate 31 becomes large in size, the central deflection phenomenon of the gas distribution plate 31 can be solved. Therefore, the quality of the deposited film can be improved.

For reference, the selective through hole 62 in which the lift unit 50 is suspended corresponds to some selected from a number of through holes 61 (see FIGS. 4 and 5) formed in the gas distribution plate 31, rather than holes separately processed. do. Therefore, in this embodiment, there is also an advantage that a separate processing hole for hanging the lift unit 50 is not necessary.

The lift unit 50 includes a connection member 53 connected to the selection passage hole 62 and a lifter 52 at both ends connecting the connection member 53 and the backing plate 32.

The connecting member 53 is connected to the selected through hole 62 selected from the through holes 61 of the gas distribution plate 31, and both ends of the lifter 52 are connected to the connecting member 53 and the backing plate 32, respectively. Is connected to and serves to pull the connecting member 53 in the direction of the backing plate (32). At this time, since the lift unit 50 is to prevent the central deflection of the gas distribution plate 31, it is preferable that the lift unit 50 is provided in the center region of the gas distribution plate 31.

In this embodiment, but not necessarily the connection member 53 is applied to the insert bolt 53.

The insert bolt 53 as the connecting member 53 has an insert fixing portion 53a which is inserted and fixed inside the selection through hole 62 and a fastening portion 53b to which the lower end of the lifter 52 is fastened. . As illustrated in FIG. 3, the fastening portion 53b preferably has a stepped structure so that the upper portion thereof is narrowed. This is because when the stepped portion is formed in the fastening portion 53b, the lower end of the lifter 52 is engaged with the inside of the fastening portion 53b, so that the pulling force of the lifter 52 can be effectively transmitted to the insert bolt 53.

As such, the fastening part 53b has a stepped structure so that the upper part thereof is narrowed, and thus is produced as a pocket to wrap the lower end of the lifter 52. Since particles may be isolated, particles may be prevented from entering the chamber 10 where the deposition process is performed. Therefore, the quality deterioration of the glass substrate G can be prevented.

In FIG. 3, the coupling between the insert fixing portion 53a of the insert bolt 53 and the selection through hole 62 is not illustrated in detail, but is schematically illustrated. A method of forming a screw thread (not shown) by a tap process and forming a screw thread (not shown) on the outer wall of the insert fixing part 53a may be applied.

The lifter 52 is provided in the lift bolt 56 arranged along the thickness direction of the gas distribution plate 31 and the depression 66 formed in the backing plate 32 and fastened with the upper end of the lift bolt 56. A lift nut 57.

The lift bolt 56 is disposed along the thickness direction of the gas distribution plate 31. As shown in detail in FIG. 3, a recess 66 is provided in an upper region of the backing plate 32 so that the lift bolt 56 can be disposed, and a bolt arrangement hole 67 is provided below the recess 66. It is provided to penetrate this backing plate 32. Accordingly, the lift bolt 56 may be disposed over the depression 66 and the bolt placement hole 67.

The bolt placement hole 67 preferably has a non-linear shape in which the diameter of the lower end portion of the backing plate 32, that is, the end region toward the gas distribution plate 31, is wider. In this regard, the fastening portion 53b of the insert bolt 53 which wraps the lower end portion of the lift bolt 56 in a pocket shape should be made larger in diameter than the lift bolt 56 to pull the lift bolt 56. Since it can transfer to the gas distribution plate 31 while withstanding the pulling force, the backing plate 32 of the backing plate 32 can be formed to form a space in which the fastening portion 53b of the insert bolt 53 is provided at the lower portion of the backing plate 32. It is desirable to have a non-linear shape in which the diameter of the lower part is formed wider.

The upper end 56a of the lift bolt 56 is disposed at the depression 66 of the backing plate 32, and the washer 58 is provided at the step formed by the depression 66 and the bolt placement hole 67. The upper end 56a of the 56 and the lift nut 57 are fastened to the backing plate 32.

The connection portion between the recess 66 and the bolt placement hole 67 is provided with a particle inflow prevention plate 69 which prevents particles from flowing into the chamber 10 through the bolt placement hole 67.

The particle inflow prevention plate 69 is provided to adjust the spacing between the particles and the backing plate 32 and the gas distribution plate 31 generated when the lift bolt 56 and the lift nut 57 are coupled. It is possible to form a uniform deposition film on the glass substrate (G) by preventing particles from blocking the passage hole 61 or entering the chamber 10 in which the deposition process is performed to prevent electrical arcing.

The upper surface of the backing plate 32 on which the recess 66 is disposed is provided with a vacuum holding sealing plate 68 for maintaining the vacuum state of the chamber 10.

The sealing plate 68 for vacuum holding may be made of a material such as rubber, and is preferably made of a structure that can be freely detached from a corresponding position on the upper surface of the backing plate 32. Because, when the deposition process is in progress, the gap between the backing plate 32 and the gas distribution plate 31 may be widened due to thermal deformation of the gas distribution plate 31, so that the vacuum holding sealing plate 68 after the deposition process is completed. This is because it is necessary to adjust the distance between the backing plate 32 and the gas distribution plate 31 by removing the and adjusting the lift nut (57).

Referring to FIG. 4, the through hole 61 includes an upper through hole 63 and a lower through hole 64 along the thickness direction of the gas distribution plate 31. The plurality of upper through holes 63 are formed in one upper region along the thickness direction of the gas distribution plate 31, and the plurality of lower through holes 64 are upper through holes along the thickness direction of the gas distribution plate 31. It is provided to communicate with the upper through holes 63 in the lower region of the (63). In this case, the lower through holes 64 may be provided in plural per one upper through holes 63.

As shown in FIG. 4, six adjacent upper through holes a1, a2, a3, a4, a5, and a6 are formed on the upper portion of the gas distribution plate 31, centering on one upper through hole a0. It is arranged in a hexagonal honeycomb structure having a hexagonal shape.

Hexagonal honeycomb structure is already known as the most stable structure that can guarantee the balance and strength through the dispersion of force, it is applied to honeycomb (shock absorber). Therefore, the hexagonal honeycomb arrangement structure of the upper through hole 63 allows the mechanical strength to be maintained even when the upper through hole 63 has a larger diameter than the conventional one.

That is, the plurality of upper through holes 63 arranged in a hexagonal honeycomb structure having a diameter larger than the lower through holes 64 and one upper through hole 63 communicating with the plurality of lower through holes 64 are gas distributions. By being formed on the upper part of the plate 31, the weight of the conventional gas distribution plate 31 can be reduced to about 50 percent, while maintaining mechanical strength as in the prior art, thereby ensuring mechanical stability. In addition, by reducing the weight of the gas distribution plate 31, sagging of the gas distribution plate can be prevented, and the stability of the deposition process can be achieved, and the processing of the gas distribution plate can be made easier than before.

As shown in detail in FIG. 4, the lower through hole 64 has a large diameter bore 64a, an orifice 64b, and a wide bore 64c.

The shaft diameter hole 64a is a portion where the lower passage hole 64 starts, and a portion at which the deposition material introduced into the upper passage hole 63 starts to be distributed to the plurality of lower passage holes 64. The shaft bore 64a has an inclined shape so as to decrease in diameter downward. That is, the shaft bore 64a has a tapered shape toward the orifice 64b disposed adjacent to the lower portion.

The shape of the shaft hole 64a prevents vortex that may occur when the deposition material having passed through the upper through hole 63 flows into the lower through hole 64 having a relatively small size. This makes it possible to flow uniformly and stably.

In the present embodiment, the shaft bore 64a shows a tapered shape toward the orifice 64b. However, the shaft bore 64a may be manufactured in a fallopian tube shape, a curved shape, etc., having a more gentle curve, and the viscosity of the deposition material. The angle of inclination or the degree of gradation may be different in consideration.

The orifice 64b is a small capillary tube connected to the lower end of the shaft bore 64a. The orifice 64b connects the shaft bore 64a and the diameter bore 64c to be described later, and the deposition material passed through the shaft bore 64a. It is a place that flows in and out. The orifice 64b has a relatively small diameter and shorter length than the shaft bore 64a and the enlarged bore 64c.

The shape of the orifice 64b lowers the pressure of the deposition material introduced through the shaft bore 64a and speeds up the flow rate. In addition, by adjusting the thickness and length of the orifice 64b, the introduced deposition material may be injected from the enlarged diameter hole 64c at a desired flow rate. That is, by adjusting the shape of the orifice 64b, the flow rate of the deposition material can be adjusted, thereby increasing the deposition rate and efficiency of depositing the deposition material on the glass substrate G.

The enlarged diameter hole 64c is a portion in which the fast-flowing deposition material passing through the orifice 64b is substantially sprayed onto the glass substrate G, and has a shape that gradually increases in diameter downward.

In the present embodiment, the enlarged diameter hole 64c has a tapered shape toward the upper portion and is manufactured in a shape larger than the diameter of the shaft diameter hole 64a. This shape of the enlarged diameter hole 64c allows the gas to be better injected into the entire area of the glass substrate G. The enlarged diameter hole 64c may be manufactured in various shapes such as a fallopian tube shape, a curved surface shape and the like as the above-described shaft diameter hole 64a.

On the other hand, the gas distribution plate 31 should have a suitable thickness (H) in consideration of the functional surface and strength, thermal expansion rate, etc., such as the injection amount, the injection area, the injection speed of the deposition material, in this embodiment of 30mm to 60mm Has a thickness.

In addition, the length H1 of the upper through hole 63 is 1.5 times or more than the length H2 of the lower through hole 64. In this way, the length H1 of the upper passage hole 63 is 1.5 times or more than the length H2 of the lower passage hole 64, so that the weight of the gas distribution plate 31 can be reduced more efficiently.

Referring to FIGS. 1 and 5, the through holes 61 formed in the gas distribution plate 31 and the arrangement structure of the lift unit 50 will be described again.

For reference, in the enlarged view of FIG. 5, the through holes 61 are shown only in the center, but are actually formed over the entire area of the gas distribution plate 31.

In the present embodiment, the lift unit 50 is provided in the plurality of selection passage holes 62 selected from the passage holes 61 of the gas distribution plate 31, wherein the plurality of selection passage holes 62 are gas distribution plates ( It is preferably selected in the central region of the gas distribution plate 31 to prevent the central sag of 31, and is selected to surround the gas supply pipe 37a connected to the gas supply 37 as shown in FIG. It is preferable.

As shown in FIG. 5, it is preferable that the plurality of selection through holes 62 provided with the lift unit 50 be arranged in a hexagonal composition during planar projection to increase stability. Because the upper through hole 63 provided in the gas distribution plate 31 as described above is arranged in a hexagonal honeycomb structure, the lift unit 50 is arranged in the same hexagonal structure as the arrangement of the upper through hole 63. This is because they are arranged in the most stable structure that can guarantee balance and strength through dispersion.

However, the present invention is not limited to the arrangement of the hexagonal structure and may be arranged in a composition having a plurality of angles, such as a square or a pentagon and an octagon, and may also be arranged in a circle.

Meanwhile, referring to FIGS. 1 and 6, in the chemical vapor deposition apparatus according to the present invention, a suspension supporting member 35 having a corrugated structure may be provided between the backing plate 32 and the gas distribution plate 31.

6 illustrates a suspension support member 35 having a corrugated structure located on one side for convenience of description.

The corrugated suspension supporting member 35 suspends the gas distribution plate 31 having a heavy weight of about 400 kg with respect to the backing plate 32. That is, as shown, the gas distribution plate 31 is positioned above the chamber 10 in a state suspended from the suspension supporting member 35 of the corrugated structure.

In addition, the corrugated suspension supporting member 35 may compensate for the thermal expansion of the gas distribution plate 31 heated to about 200 ° C. in at least one of the X, Y, and Z axis directions of FIG. 6 during the deposition process. Thermal expansion with the gas distribution plate 31 so as to be. Of course, when the deposition process is completed, the gas distribution plate 31 and the suspension supporting member 35 is contracted to the original state.

As shown in detail in FIG. 6, the suspension supporting member 35 having a corrugated structure is disposed horizontally in an arrangement direction (left and right directions in FIG. 1) of the backing plate 32 and the gas distribution plate 31 and is disposed on the inner surface of the corrugated suspension member 35. Side wall portion 71 in which a plurality of corrugated grooves 72a and 72b are formed, an upper wall portion 73 formed horizontally on the plate surface of the side wall portion 71 at an upper end of the side wall portion 71, and a side wall. The lower wall part 74 formed in parallel with the upper wall part 73 in the lower end of the part 71 is provided.

The suspension supporting member 35 of the corrugation structure may be made of aluminum. That is, the side wall part 71, the upper wall part 73, and the lower wall part 74 can be integrally manufactured by bending the said position from aluminum. In this case, the upper wall portion 73 and the lower wall portion 74 may be bent at a corresponding position of the side wall portion 71 or may be formed by a method such as machining. However, in some cases, the side wall portion 71, the upper wall portion 73 and the lower wall portion 74 may be partially manufactured to be welded or bolted to each other.

A plurality of corrugation grooves 72a and 72b are formed on each side surface of the side wall portion 71. The corrugation grooves 72a and 72b have an approximately hemispherical shape. However, it is not necessary to achieve a full hemispheric shape, and a partial arc shape is sufficient.

The number of corrugation grooves 72a and 72b can be appropriately selected. However, it is preferable that the plurality of corrugation grooves 72a and 72b formed on both side surfaces of the side wall portion 71 intersect each other on both side surfaces of the side wall portion 71 so as not to be arranged on the same horizontal axis.

As such, when the plurality of corrugated grooves 72a and 72b cross each other on both sides of the side wall portion 71, the length of the overall heat flow increases within a limited height, so that the heat of the gas distribution plate 31 is increased. It is forbidden to fall.

In addition, due to the plurality of corrugated grooves 72a and 72b, the suspension supporting member 35 may increase its expansion length a little, thereby effectively coping with thermal expansion of the gas distribution plate 31. At this time, in order to ensure mechanical stability due to thermal expansion and contraction, the spacing interval between the corrugated grooves (72a, 72b) is more preferably the same. However, the spacing between the corrugation grooves 72a and 72b need not be exactly the same.

In addition, in the present embodiment, the recessed depths of the corrugation grooves 72a and 72b are formed at least smaller than half the thickness of the side wall portion 71. This is also a method for ensuring mechanical stability due to thermal expansion and contraction, and need not be limited thereto.

The upper wall portion 73 extends along the outer wall direction of the chamber 10 at the upper end of the side wall portion 71. Unlike the prior art, in the present embodiment, the upper wall portion 73 of the suspension supporting member 35 is bittenly coupled to the slit 76 formed between the backing plate 32 and the backing plate support 75. Accordingly, the suspension supporting member 35 can cope with thermal expansion of the gas distribution plate 31 because the suspension structure 35 can flow at a predetermined interval of the slit 76 together with the corrugation structure during thermal expansion of the gas distribution plate 31. do.

The lower wall portion 74 extends toward the gas distribution plate 31 at the lower end of the side wall portion 71. That is, the lower wall portion 74 extends in the opposite direction to the upper wall portion 73. The lower wall portion 74 is further provided with a valley portion 77 that prevents interference with the gas distribution plate 31 that is thermally expanded at a position adjacent to the side wall portion 71.

The lower wall portion 74 also has a structure that is inserted into the groove 31a formed on the side surface of the gas distribution plate 31 similarly to the upper wall portion 73. However, since the gas distribution plate 31 and the suspension supporting member 35 having a corrugated structure flow while thermally expanding, the lower wall portion 74 may be separated from the groove 31a.

In order to prevent this, the lower wall portion 74 and the gas distribution plate 31 are further provided with a release blocking portion 78 for preventing the lower wall portion 74 from being separated from the groove 31a.

Hereinafter, the operation of the chemical vapor deposition apparatus for a flat panel display having such a configuration will be described.

First, the glass substrate G to be deposited is transferred by a robot arm (not shown) while the susceptor 20 is lowered to the lower region of the lower chamber 12 by the elevating module 23. It is introduced through the portion 13 and disposed above the susceptor 20.

At this time, the upper end of the lift pin 24 is protruded a predetermined height to the upper surface of the susceptor 20, the robot arm is lifted up after lifting the glass substrate (G) on the lift pins (24). When the robot arm is taken out, the substrate entry part 13 is closed, and the interior of the upper and lower chambers 11 and 12 is maintained in a vacuum atmosphere and filled with process gases (SiH4, NH3, etc.) necessary for deposition.

Next, for the progress of the deposition process, the ascending / descending module 23 operates to float the susceptor 20. Then, the lift pin 24 is lowered, and the glass substrate G is loaded onto the upper surface of the susceptor 20 while being closely attached thereto.

When the susceptor 20 floats by a predetermined distance, the operation of the lifting / lowering module 23 is stopped and the glass substrate is positioned directly below the gas distribution plate 31. At this time, the susceptor 20 is already heated to about 200 to 400 degrees centigrade.

Then, power is applied through the electrode 30 insulated by the insulator 34. A deposition material, which is a silicon compound ion, is ejected through the gas distribution plate 31 having numerous orifices formed thereon, and reaches the glass substrate G to be deposited on the glass substrate G. [

On the other hand, in the operation as described above, the edge region of the gas distribution plate 31 is supported by the suspension supporting member 35 and the central region of the gas distribution plate 31 is supported by the lift unit 50, the deposition process By minimizing the deflection of the gas distribution plate 31 due to thermal expansion during the expansion, the flatness of the gas distribution plate 31 with respect to the susceptor 20 can be more easily observed while preventing the gas distribution plate 31 from sagging and adjusting height. By maintaining effectively, it is possible to form a uniform deposition film on the glass substrate (G).

FIG. 7 is a view illustrating a lift unit coupled to a selective through hole of a backing plate and a gas distribution plate in a chemical vapor deposition apparatus for a planar display according to another exemplary embodiment of the present invention.

According to another embodiment of the present invention, as shown in Figure 7, the engaging jaw 54 is formed in the interior of the selection through-hole 62 and the insert fixing portion (53a) in a protruding form by engaging with each other You can.

At this time, since the insert fixing portion 53a is made larger in area than the selection through hole 62 so as to allow engagement, at least one through hole adjacent to the selection through hole 62 can be inserted to insert the insert fixing portion 53a. It is preferable to manufacture so that the upper area | region of 61 may communicate.

In addition, one side of the lower region of the at least one through hole 61 adjacent to the selection through hole 62 may be engaged by rotating the inserted insert fixing portion 53a by 90 degrees in the horizontal direction. It is preferred to be fabricated so as to form a space providing ().

It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the invention. Accordingly, such modifications or variations are intended to fall within the scope of the appended claims.

10: chamber 11: upper chamber
12 lower chamber 13 substrate entry part
20: susceptor 21: column
22: susceptor support unit 23: lifting module
30: Electrode 31: Gas distribution plate
32: backing plate 35: suspension support member
37: gas supply unit 38: high frequency power supply unit
40: reinforcing wall portion 50: lift unit
52: lifter 53: insert bolt
56: lift bolt 57: lift nut
58: washer 61: through hole
62: selective through hole 63: upper through hole
64: lower passage hole 66: depression
67: bolt arrangement hole 68: particle inflow prevention plate
69: sealing plate for vacuum holding 71: side wall
73: upper wall portion 74: lower wall portion
76: slit 78: departure stop

Claims (14)

A gas distribution plate disposed in an upper region of a chamber in which a deposition process for a flat panel display glass is performed and having a plurality of through holes for providing a deposition material to a surface of the glass substrate;
A backing plate disposed parallel to the gas distribution plate in an upper region of the gas distribution plate with the gas distribution plate and the buffer space interposed therebetween; And
A connection member connected to a plurality of selected through holes selected from the through holes in the central region of the gas distribution plate, and a lifter connecting both the connection member and the backing plate to both ends thereof, thereby providing a central deflection of the gas distribution plate. A lift unit to block,
The lifter
A lift bolt disposed along a thickness direction of the gas distribution plate; And
A lift nut provided in a recess formed in the backing plate and fastened to an upper end of the lift bolt;
The backing plate is formed with a bolt arrangement hole in communication with the depression and formed along the thickness direction, the lift bolt is disposed,
And a particle inflow preventing plate for preventing particles from flowing into the chamber through the bolt placement hole at the connection portion of the recess and the bolt placement hole. delete The method of claim 1,
The connecting member is an insert bolt,
The insert bolt,
An insert fixing part inserted into and fixed inside the selection through hole; And
Chemical vapor deposition apparatus for a flat display, characterized in that it comprises a fastening portion to which the lower end of the lifter is fastened. The method of claim 3,
And the insert fixing part is screwed to a tab processing part formed on an inner wall of the selection through hole. The method of claim 3,
The insert fixing part is a chemical vapor deposition apparatus for a flat display, characterized in that coupled to the engaging jaw formed in the selection through-hole. The method of claim 5,
At least one passage hole adjacent to the selection passage hole has a space in which an upper region thereof communicates with the selection passage hole for insertion of the insert fixing portion, and one side of the lower region provides the locking step together with the selection passage hole. Chemical vapor deposition apparatus for a flat panel display, characterized in that forming. delete delete The method of claim 1,
And the bolt placement hole has a non-linear shape in which the diameter of the end region toward the gas distribution plate is wider. The method of claim 1,
And a vacuum holding sealing plate coupled to an upper surface of the backing plate on which the recess is disposed, and maintaining a vacuum state of the chamber. The method of claim 1,
The through hole,
A plurality of upper passage holes formed in one upper region along a thickness direction of the gas distribution plate; And
And a plurality of lower passage holes formed in lower regions of the upper passage holes along the thickness direction of the gas distribution plate and communicating with the upper passage holes.
The lower through hole is a plurality of chemical vapor deposition apparatus for a flat display, characterized in that provided in plurality per one upper through hole. 12. The method of claim 11,
The lower passage hole,
An axis diameter hole disposed adjacent to the upper through hole to allow the deposition material passing through the upper through hole to flow in, and to have a diameter gradually decreasing downwardly;
An orifice connected to a lower end of the shaft hole to allow the deposition material passing through the shaft hole to pass downward; And
And a diameter expansion hole connected to a lower end of the orifice and passing through the orifice, the deposition material falling toward the glass substrate and having a diameter gradually increasing toward the lower side of the orifice. The method of claim 1,
The plurality of selected through-holes are chemical vapor deposition apparatus for a flat display, characterized in that arranged in a hexagonal composition during the projection plane. The method of claim 1,
And a suspension support member disposed between the gas distribution plate and the backing plate to suspend the gas distribution plate with respect to the backing plate.
The flat substrate glass substrate is a chemical vapor deposition apparatus for a flat display, characterized in that the OLED (Organic Light Emitting Diodes).

Images