KR100738874B1 - Chemical vapor deposition apparatus for flat display - Google Patents

Abstract

A CVD apparatus for a flat display is provided to prevent deformation of a wall of a chamber and a wall of a gate valve by installing reinforcing member on the walls. A deposition process for a flat display is carried out in a chamber(10) having a chamber slot(10a) and an upper wall. A gate valve(50) is connected to an outer wall of the chamber, and has a valve slot(50a) communicating with the chamber slot and an upper wall(50b). A reinforcing member(60) is provided on any one side of the upper walls of the chamber and gate valve to support deformation of the upper walls of the chamber and gate valve.

Description

Chemical Vapor Deposition Apparatus for Flat Displays {Chemical Vapor Deposition Apparatus for Flat Display}

1 is a partially enlarged view of a chemical vapor deposition apparatus for a planar display according to the prior art.

2 is a schematic structural diagram of a chemical vapor deposition apparatus for planar display according to a first embodiment of the present invention.

3 is an exploded perspective view of the reinforcing member as a partial enlarged view of FIG. 2;

4 is a state diagram of the coupling of the reinforcing member shown in FIG.

5 is a partially enlarged view of a chemical vapor deposition apparatus for a planar display according to a second embodiment of the present invention.

6 is a partially enlarged view of a chemical vapor deposition apparatus for planar display according to a third embodiment of the present invention.

* Explanation of symbols for the main parts of the drawings

10: chamber 10a: chamber slot

10b: chamber upper wall 16: electrode

17 gas distribution plate 26 insulator

30: susceptor 31: substrate loading portion

38: lift pin 40: susceptor support

50: gate valve 50a: valve slot

50b: valve upper wall 55: O-ring

60, 60a: reinforcing member 62: bolt

The present invention relates to a chemical vapor deposition apparatus for a flat panel display, and more particularly, the chamber upper wall and the valve upper wall length can be reduced compared to the conventional method while preventing deformation due to deflection in the upper chamber and the upper valve wall. By maintaining a short lifting distance of the insulator, it ensures a stable lifting motion for the susceptor to induce a smooth deposition process as well as the material cost of manufacturing the chamber, the time to vacuum or evacuate the interior of the chamber, the filling inside the chamber The present invention relates to a chemical vapor deposition apparatus for a flat display that can reduce the amount of gas, etc.

Flat panel displays are widely used in personal handheld terminals, as well as in TVs and computers.

Such flat displays include a variety of types such as cathode ray tube (CRT), liquid crystal display (LCD), plasma display panel (PDP), and organic light emitting diodes (OLED).

Among them, LCD (Liquid Crystal Display) injects a liquid crystal, which is an intermediate between solid and liquid, between two thin upper and lower glass substrates, and generates contrast by changing the arrangement of liquid crystal molecules by the electrode voltage difference between the upper and lower glass substrates. It is a device using a kind of optical switch phenomenon to display an image.

LCDs are now widely used in electronic clocks, electronic calculators, TVs, notebook PCs, electronic products, automobiles, aircraft speed displays and driving systems.

Previously, LCD TVs have a size of about 20 to 30 inches, and monitors have a mainstream size of 17 inches or less. In recent years, however, the preference for large TVs of 40 inches or larger and large monitors of 20 inches or larger has increased.

Therefore, manufacturers of LCDs have come to produce wider glass substrates. Currently, research has been conducted to increase the size of glass substrates to the 7th generation having a width of 1950 × 2250 mm or 1870 × 2200 mm, or the 8th generation having a width of 2160 × 2460 mm or more.

LCD is a TFT process in which processes such as deposition, photo lithography, etching, chemical vapor deposition, etc. are repeatedly performed, a cell process for bonding upper and lower glass substrates, and an apparatus It is released as a product through the completed module process.

On the other hand, the chemical vapor deposition process, one of many processes, is plasma-formed by an external high frequency power source, and silicon-based compound ions having high energy are ejected from the gas distribution plate through the electrodes. It is a process to be deposited on a glass substrate. This process is performed in a chamber that performs a chemical vapor deposition process, which will be described with reference to FIG. 1 as follows.

1 is a partially enlarged view of a chemical vapor deposition apparatus for a planar display according to the prior art.

As shown in this figure, a chamber slot 110a through which the glass substrate G as a flat panel display is formed at one side of a process chamber 110 (hereinafter, referred to as a chamber) that performs a chemical vapor deposition process in the prior art. It is. At this time, the length t1 of the upper chamber wall 110b located above the chamber slot 110a prevents deformation due to deflection due to vacuum pressure while the inside of the chamber 110 is maintained in a vacuum state. It is formed long enough to make.

A gate valve 150 having a valve slot 150a communicating with the chamber slot 110a is coupled to an outer wall of the chamber 110 where the chamber slot 110a is located. The length t1 of the valve upper wall 150b located above the valve slot 150a is also formed sufficiently long as the chamber upper wall 110b.

Although not shown, the gate valve 150 is typically coupled to the outer wall of the chamber 110 by bolts. An O-ring (155) for interleaving the gate valve 150 and the chamber 110 is hermetically sealed to each other.

The susceptor 130 having a substrate loading part 131 on which the glass substrate G to be deposited is loaded is provided in the chamber 110 so as to be liftable. At this time, the upper surface of the substrate loading portion 131 is a slot (so that the glass substrate (G) flowing into the interior of the chamber 110 through the slots (110a, 150a) can be mounted on the substrate loading portion 131) Located below the horizontal axis of the 110a, 150a.

As described above, since the susceptor 130 under the 7th generation or the 8th generation is large in size and relatively large in size, the large glass substrate G is disposed on the upper surface of the substrate loading part 131 of the susceptor 130. When raised, sagging is likely to occur in the glass substrate G including the substrate loading part 131.

Therefore, the lower surface of the substrate loading part 131 is coupled to the susceptor support 140 to prevent the substrate loading part 131 and the glass substrate G from sagging due to the weight of the susceptor 30.

In the upper region of the chamber 110, an electrode 116 and a gas distribution plate 117 are assembled to the chamber 110.

By such a configuration, the glass substrate G flows into the chamber 110 through the valve slot 150a of the gate valve 150 and the chamber slot 110a of the chamber 110, thereby allowing the susceptor 130 to When loaded onto the upper surface of the substrate loading unit 131, the inside of the chamber 110 is maintained in a vacuum state. Subsequently, the susceptor 130 is heated to a temperature of about 400 ° C. Thereafter, the susceptor 130 is raised together with the susceptor support 140 through the lifting arm (not shown), so that the glass substrate G is disposed adjacent to the gas distribution plate 117.

Then, power is applied through the electrode 116 insulated from the chamber 110 by Teflon, the insulator 126. Subsequently, reactive gas ions, which are silicon-based compounds, are ejected through the gas distribution plate 117 in which a large number of orifices are formed, and the deposition process of the glass substrate G is performed.

When the deposition process of the glass substrate (G) is completed, the susceptor 130 is lowered and the glass substrate (G) is taken out, the process for a new glass substrate (not shown) is repeated.

By the way, in the conventional chemical vapor deposition apparatus for planar displays, the length t1 of the chamber upper wall 110b located above the chamber 110 including the valve upper wall 150b of the valve slot 150a is sufficiently long. Since the gap between the gas distribution plate 117 and the substrate loading unit 131 is large because it is formed, in this case, a problem that the susceptor 130 has to increase or decrease a large distance occurs. As the lifting distance of the susceptor 130 increases as described above, a smooth deposition process for the glass substrate G cannot be expected because the stable lifting movement of the susceptor 130 cannot be guaranteed.

In addition, in the prior art, since the length t1 of the chamber upper wall 110b and the valve upper wall 150b is relatively long, the size of the chamber 110, in particular, the height h1 is large. Therefore, the material cost of manufacturing the chamber 110 is increased, the time for maintaining the vacuum in the chamber 110 or evacuating the vacuum is increased, and the amount of gas filled in the chamber 110 is increased. There are problems that inevitably lead to various losses.

Therefore, it is necessary to form the length t1 of the chamber upper wall 110b and the valve upper wall 150b to be relatively small, and the length t1 of the chamber upper wall 110b and the valve upper wall 150b may be reduced without any supplement. In this case, deformation may occur due to deflection in the chamber upper wall 110b and the valve upper wall 150b by the vacuum pressure in the process of maintaining the interior of the chamber 110 in a vacuum state.

If deformation due to deflection occurs in this region, friction is formed at the contact surface of the O-ring 155 provided between the chamber 110 and the gate valve 150 to generate O-ring particles, as well as leaks in this region. There is a problem that can lead to a general process failure due to the high probability of occurrence of the leak.

An object of the present invention is to prevent the deformation caused by the deflection in the chamber upper wall and the valve upper wall, while reducing the length of the chamber upper wall and the valve upper wall than before, and stable lifting motion for the susceptor by keeping the lifting distance of the susceptor short Chemical vapor deposition apparatus for planar display which can induce a smooth deposition process to reduce the material cost, the time to maintain or evacuate the interior of the chamber, and the amount of gas filled in the chamber To provide.

SUMMARY OF THE INVENTION An object of the present invention is to provide a chemical vapor deposition apparatus for a flat panel display, which can reduce the length of the chamber upper wall and the valve upper wall than the conventional one, and can solve the process defects caused by O-ring particles and leaks.

According to the present invention, the chamber comprises a chamber slot into which the flat display is introduced and the chamber upper wall formed on the upper portion of the chamber slot, the chamber in which the deposition process for the flat display proceeds; A gate valve having a valve slot communicating with the chamber slot and an upper valve wall formed on the valve slot, the gate valve being coupled to an outer wall of the chamber with an O-ring interposed therebetween; And a reinforcing member provided on at least one side of the chamber upper wall and the valve upper wall to reinforce the strength of the chamber outer wall to prevent deformation of the chamber upper wall and the valve upper wall. Is achieved by.

Here, the reinforcing member reinforces the strength of the chamber upper wall and the valve upper wall to prevent deformation of the chamber upper wall and the valve upper wall generated as the length of the chamber upper wall and the valve upper wall decreases.

The reinforcing member is provided on the valve upper wall.

The reinforcing member is preferably made of a metal material.

The reinforcing member is an H beam.

The H beam is continuously disposed along the sidewall surface length of the chamber on the upper surface of the valve upper wall.

The H beam is bolted at that position.

The opening area of the chamber slot and the valve slot is substantially the same.

The length of the chamber upper wall and the valve upper wall are substantially the same.

The reinforcing member may be at least one reinforcing bar integrally embedded in at least one of the chamber upper wall and the valve upper wall.

The flat panel display is a large glass substrate for an LCD (Liquid Crystal Display).

Hereinafter, with reference to the accompanying drawings will be described in detail for each embodiment of the present invention. In the description, the same reference numerals are given to the same components.

2 is a schematic structural diagram of a chemical vapor deposition apparatus for a planar display according to a first embodiment of the present invention, FIG. 3 is an exploded perspective view of a reinforcing member as a partially enlarged view of FIG. 2, and FIG. 4 is shown in FIG. 3. Is a state diagram of the combined reinforcing member.

Referring to FIG. 2, the planar display chemical vapor deposition apparatus 1 according to the first exemplary embodiment of the present invention is provided in a chamber 10 and an upper region of the chamber 10. And a susceptor 30 disposed below the electrode 16 to load a predetermined silicon-based compound ion, a susceptor 30 loaded with a planar display G, and a susceptor A plurality of susceptor support 40 for supporting the susceptor 30 in the lower portion of the 30 is provided.

In the chamber 10, the outer wall is shielded from the outside so that the deposition space S therein can be maintained in a vacuum atmosphere. The deposition space S of the chamber 10 is filled with inert gases He and Ar so as not to affect the silicon compound ions which are the deposition materials emitted from the electrode 16.

A gas diffusion plate 12 is provided on the bottom surface 11 of the chamber 10 to diffuse the gas existing in the deposition space S in the chamber 10 back into the deposition space S. In the central region of the bottom surface 11 in the chamber 10, a through hole 10d through which the column 32 of the susceptor 30 penetrates is formed. An additional through hole 10c through which the shaft portion 42 of the susceptor support 40 penetrates is further formed around the through hole 10d.

The electrode 16 is provided in the upper region in the chamber 10. A plurality of orifices are formed below the electrode 16 to provide a gas distribution plate 17 for distributing silicon-based compound ions, which are deposition materials. The gas distribution plate 17 is disposed in parallel with the substrate loading portion 31 of the susceptor 30 to be described later with a predetermined distance (about tens of millimeters (mm)).

As described above, the planar display G may be any of a cathode ray tube (CRT), a liquid crystal display (LCD), a plasma display panel (PDP), and organic light emitting diodes (OLED).

However, in the present embodiment, a large glass substrate G for a liquid crystal display (LCD) will be regarded as a flat display (G). As described above, the large size refers to the size of the level applied to the 7th or 8th generation. Hereinafter, the flat display G will be described as a glass substrate G.

A remote plasma 18 for supplying a predetermined cleaning gas for removing impurities remaining in the chamber 10 is provided outside the upper portion of the chamber 10. The high frequency power supply unit 20 is provided around the remote plasma 18. The high frequency power supply unit 20 is connected to the electrode 16 by a connection line 22.

An insulator 26 is provided between the electrode 16 and the chamber 10 so that the electrode 16 does not directly contact the outer wall of the chamber 10 and is energized. The insulator 26 may be made of Teflon or the like. An exhaust buffer space portion 19 is formed between the electrode 16 and the gas distribution plate 17.

The susceptor 30 has a substrate loading part 31 for supporting a glass substrate G loaded in a transverse direction in the deposition space S in the chamber 10, and an upper end thereof is the center of the substrate loading part 31. The lower end includes a column 32 fixed to the through hole 10d and disposed outside the chamber 10.

The upper surface of the substrate loading portion 31 is made of almost a plate so that the glass substrate G can be loaded in a precise horizontal state. A heater (not shown) is mounted inside the substrate loading unit 31 to heat the substrate loading unit 31 to a predetermined deposition temperature of approximately 400 ° C.

The susceptor 30 moves up and down in the deposition space S in the chamber 10. That is, when the glass substrate G is loaded, the glass substrate G is disposed in the area of the bottom surface 11 in the chamber 10, and when the glass substrate G is loaded and the process is performed, the glass substrate G is the gas distribution plate 17. Injury so as to be adjacent to).

Before the deposition process is performed, the upper surface of the substrate loading unit 31 is placed on the substrate loading unit 31 by the glass substrate G introduced into the chamber 10 through the slots 10a and 50a which will be described later. It is located below the horizontal axis of the slot (10a, 50a) so that it can be.

The lifting arm 36 for raising and lowering the susceptor 30 is provided in the column 32 of the susceptor 30. The susceptor 30 and the susceptor support 40 are elevated together by the lifting arm 36.

The space between the column 32 and the through hole 10d of the susceptor 30 should not be generated in the process of lifting the susceptor 30 by the lifting arm 36. Accordingly, the bellows pipe 34 is provided around the through hole 10d to surround the outside of the column 32.

The bellows pipe 34 is expanded when the susceptor 30 descends and is compressed when the susceptor 30 rises to prevent space from occurring between the column 32 and the through hole 10d.

The substrate loading part 31 of the susceptor 30 is provided with a plurality of lift pins 38 which reliably support the lower surface of the glass substrate G loaded or taken out to guide the upper surface of the substrate loading part 31. . The lift pin 38 is provided to penetrate the substrate loading portion 31.

When the susceptor 30 is lowered by the lifting arm 36, the lift pin 38 is pressed at the bottom 11 of the chamber 10 so that the top thereof is the top surface of the substrate loading part 31. It protrudes. Thus, the glass substrate G is spaced apart from the substrate loading part 31. On the contrary, when the susceptor 30 floats, the susceptor 30 moves downward to bring the glass substrate G into close contact with the upper surface of the substrate loading part 31.

The lift pin 38 is disposed between the glass substrate G and the substrate loading portion 31 so that the robot arm (not shown) can grip the glass substrate G loaded on the substrate loading portion 31 of the susceptor 30. It also serves to form a space.

As described above, the susceptor 30 under 7th generation or 8th generation may have a large weight and a relatively large size, which may cause sag. In this case, the susceptor 30 may also sag in the glass substrate G.

Thus, as shown, a plurality of susceptor support 40 is provided below the substrate loading portion 31 of the susceptor 30 to support the substrate loading portion 31 of the susceptor 30. Since the substrate loading portion 31 is formed to be larger than the size of the large glass substrate G, sagging occurs seriously toward the radially outer side from the central column 32.

Therefore, the susceptor support 40 is provided in plurality in the outer region of the substrate loading part 31 of the susceptor 30 to prevent the substrate loading part 31 of the susceptor 30 from sagging.

As such, since the susceptor support 40 is a means for preventing the substrate loading portion 31 of the susceptor 30 from sagging, at least two susceptor supports 40 are installed. The susceptor support 40 may include a head 41 positioned on the bottom surface of the substrate loading part 31, and a shaft part extending from the head 41 and arranged in parallel with the column 32 of the susceptor 30. 42).

The end of the shaft portion 42 is integrally coupled to the lifting arm 36 like the column 32. Therefore, when the lifting arm 36 operates, the lifting arm 36 moves up and down together with the susceptor 30. A bellows pipe 34a is formed in the outer region of the shaft portion 42 similarly to the susceptor 30 region described above. The bellows pipe 34a serves to shield the through hole 10c formed in the bottom 11 region of the chamber 10.

Meanwhile, referring to FIGS. 3 and 4 including FIG. 2, a chamber slot, which is a passage through which a glass substrate G flows in and out of the chamber 10 by a predetermined working robot, is formed on an outer wall of the chamber 10. 10a) is formed.

In addition, a chamber upper wall 10b is formed at the upper portion of the chamber slot 10a in contact with the support wall 25 on which the electrode 16 and the gas distribution plate 17 are supported. At this time, the length t2 of the chamber upper wall 10b is formed to be much smaller than the length t1 of the conventional chamber upper wall 110b.

The gate valve 50 is coupled to the outer wall of the chamber 10 in which the chamber slot 10a is located. Although not shown, the gate valve 50 may be coupled to the outer wall of the chamber 10 by a bolt or the like. An O-ring 55 is interposed between the chamber 10 and the gate valve 50 to prevent the occurrence of leaks in this region.

On the plate surface of the gate valve 50, a valve slot 50a communicating with the chamber slot 10a is formed. Thus, the glass substrate (G) may enter and exit through the valve slot (50a) of the gate valve 50 and the chamber slot (10a) of the chamber 10 in communication with each other. On the valve slot 50a, a valve upper wall 50b having a thickness corresponding to the chamber upper wall 10b is formed.

Here, the opening areas of the chamber slot 10a and the valve slot 50a are made substantially the same. In addition, the length t2 of the chamber upper wall 10b and the valve upper wall 50b is also substantially the same. The reason why the upper surface of the chamber upper wall 10b and the valve upper wall 50b are made horizontal by making the same length t2 of the chamber upper wall 10b and the valve upper wall 50b is the same when the chamber 10 is assembled. This is to avoid interference with other facilities existing outside of (10).

When the length t2 of the chamber upper wall 10b and the valve upper wall 50b is smaller than the length t1 (refer to FIG. 1) of the chamber upper wall 110b and the valve upper wall 150b, the gas distribution plate 17 And the distance between the substrate loading portion 31 of the susceptor 30 are much smaller than the conventional one (see FIG. 1).

Therefore, as the deposition process proceeds, the susceptor 30 does not need to rise or fall a large distance. As the lifting distance of the susceptor 30 is reduced in this manner, a stable lifting motion for the susceptor 30 may be ensured, thus sufficient to expect a smooth deposition process for the glass substrate G.

In addition, since the length t2 of the chamber upper wall 10b and the valve upper wall 50b is reduced, the overall size of the chamber 10, in particular, the height h2 is smaller than that of the related art (see FIG. 1). Therefore, the material cost of manufacturing the chamber 10 can be reduced, and the time for evacuating or evacuating the interior of the chamber 10 for the deposition process can be shortened, and the inside of the chamber 10 is filled. Advantages such as that the amount of gas to be reduced can be reduced.

However, as described above, when the length t2 of the chamber upper wall 10b and the valve upper wall 50b is reduced, the vacuum pressure is generated during the process of maintaining the interior of the chamber 10 in a vacuum state for the deposition process. Deformation due to deflection may occur in the relatively thin chamber upper wall 10b and the valve upper wall 50b.

As described above, if deformation due to deflection occurs in the chamber upper wall 10b and the valve upper wall 50b, friction is formed at the contact surface of the O-ring 55 to generate O-ring particles as well as in this region. Leaks are more likely to occur, leading to overall process failure. Therefore, it is necessary to solve this properly, which is in charge of the reinforcing member 60 below.

The reinforcing member 60 is an outer wall of the chamber 10, in particular, so that deformation of the chamber upper wall 10b and the valve upper wall 50b is prevented as the length t2 of the chamber upper wall 10b and the valve upper wall 50b is reduced. It serves to reinforce the chamber upper wall 10b and the valve upper wall 50b. Therefore, the reinforcing member 60 may be provided at any one of the chamber upper wall 10b and the valve upper wall 50b. However, in this embodiment, the reinforcing member 60 is provided on the chamber upper wall 10b, which is relatively easy to work.

At this time, the reinforcing member 60 is preferably made of a metal material rather than a weak plastic strength or rigidity. However, if the plastic having rigidity as much as the metal, the reinforcing member 60 may be made of the material.

Since the reinforcing member 60 serves to reinforce the deformation of the chamber upper wall 10b and the valve upper wall 50b, the shape does not need to be determined. However, in the present embodiment, the reinforcing member 60 is replaced with the metal H beam 60 that can be commonly encountered in the periphery.

The reinforcing member 60 as the H beam 60 is disposed continuously along the length of the side wall surface of the chamber 10 on the upper surface of the valve upper wall 50b and fixed at that position. For fixing, bolt holes 61a and 61b are formed in the reinforcing member 60 and the valve upper wall 50b, respectively.

3 and 4, the reinforcing member 60 is placed on the upper surface of the valve upper wall 50b and then easily reinforced by inserting and fastening the bolt 62 into each of the bolt holes 61a and 61b. It is possible to fix the member 60.

If this method is cumbersome, as shown in Fig. 5 showing the second embodiment, the reinforcing member 60 may be placed on the upper surface of the valve upper wall 50b and then welded (W).

The operation of the chemical vapor deposition apparatus 1 for a flat panel display having such a configuration and the effects thereof will be described as follows.

First, the glass substrate G to be deposited is transferred by the robot arm while the susceptor 30 and the susceptor support 40 are lowered to the lower region of the chamber 10 by the lifting arm 36. After being introduced into the chamber 10 through the connected chamber slot 10a and the valve slot 50a, the chamber slot 10a is disposed above the substrate loading part 31 of the susceptor 30.

At this time, since the upper end of the lift pin 38 is protruded a predetermined height to the upper surface of the substrate loading portion 31, the robot arm is taken out after placing the glass substrate (G) on the lift pins (38). When the robot arm is taken out, the inside of the chamber 10 is maintained in a vacuum atmosphere and at the same time inert gas (He, Ar) required for deposition is filled.

As described above, in the process of evacuating the inside of the chamber 10, the deformation may occur due to the deflection in the relatively thin chamber upper wall 10b and the valve upper wall 50b. Since the 60 is coupled, deformation due to deflection does not occur in the chamber upper wall 10b and the valve upper wall 50b. Therefore, defects caused by O-ring particles or leaks are reduced by the amount.

Next, for the progress of the deposition process, the lifting arm 36 is operated to float the susceptor 30 and the susceptor support 40 together. At this time, in the case of the present invention, since the length t2 of the chamber upper wall 10b and the valve upper wall 50b is smaller than the conventional one (refer to FIG. 1), the susceptor 30 does not need to increase the distance much. Therefore, the stable lifting movement for the susceptor 30 can be ensured.

When the susceptor 30 is raised, the lift pin 38 is lowered, and the glass substrate G is loaded while being in close contact with the upper surface of the substrate loading part 31. When the susceptor 30 rises to the position as shown in FIG. 2, the operation of the lifting arm 36 is stopped and the glass substrate G is positioned directly below the gas distribution plate 17. At this time, the susceptor 30 is heated to about 400 ° C.

Then, power is applied through the electrode 16 insulated by the insulator 26. Subsequently, the silicon-based compound ions are ejected through the gas distribution plate 17 on which a large number of orifices are formed to reach the glass substrate G, thereby depositing on the glass substrate G.

6 is a partially enlarged view of a chemical vapor deposition apparatus for planar display according to a third embodiment of the present invention.

In the above embodiments, the H-beam 60 is used as the reinforcing member 60 to couple the bolt 62 to the chamber upper wall 10b or to weld W. However, as shown in FIG. 6 showing the third embodiment, the reinforcing member 60a may be embedded in the chamber upper wall 10b and the valve upper wall 50b.

In this case, the reinforcing member 60a may be a reinforcing bar 60a or the like, and the reinforcing bar 60a as the reinforcing member 60a may be integrally embedded in the manufacturing of the chamber 10 and the gate valve 50. will be.

Here, the arrangement direction of the rebar 60a may be a vertical direction as shown, or may be a horizontal direction. In addition, the rebar 60a may be arranged in both the vertical and horizontal directions so that the rebar 60a may have a net structure.

As described above, according to the present invention, the length t2 of the upper chamber wall 10b of the chamber 10 and the upper valve valve wall 50b length t2 of the gate valve 50 are reduced to the maximum to keep the susceptor 30 in a short lifting distance. It is possible to induce a smooth deposition process by ensuring a stable lifting motion for the susceptor 30.

In addition, it is possible to reduce the material cost of manufacturing the chamber 10, the time to maintain or evacuate the interior of the chamber 10, the amount of gas filled in the chamber 10, etc. to reduce the occurrence of various losses (Loss) It can reduce the process defects caused by O-ring particles and leaks.

As described above, the present invention is not limited to the described embodiments, and various modifications and changes can be made without departing from the spirit and scope of the present invention. It will be apparent to those skilled in the art. Therefore, such modifications or variations will have to be belong to the claims of the present invention.

As described above, according to the present invention, it is possible to prevent the deformation caused by the deflection in the chamber upper wall and the valve upper wall, while reducing the length of the chamber upper wall and the valve upper wall than before, and by maintaining the lifting distance of the susceptor to the susceptor It is possible to induce a smooth deposition process by ensuring a stable lifting movement for the material, as well as to reduce the material cost, the time to maintain the vacuum or exhaust of the interior of the chamber, the amount of gas filled in the chamber, and the like.

In addition, according to the present invention, while reducing the length of the chamber upper wall and the valve upper wall than before, process defects caused by O-ring particles and leaks can be eliminated.

Claims (11)

A chamber having a chamber slot into which a planar display enters and a chamber upper wall formed above the chamber slot, wherein the deposition process of the planar display is performed; A gate valve having a valve slot communicating with the chamber slot and an upper valve wall formed on the valve slot, the gate valve being coupled to an outer wall of the chamber with an O-ring interposed therebetween; And And a reinforcing member provided on at least one side of the chamber upper wall and the valve upper wall to reinforce the strength of the outer wall of the chamber so that deformation of the chamber upper wall and the valve upper wall is prevented. The method of claim 1, The reinforcing member reinforces the strength of the chamber upper wall and the valve upper wall to prevent deformation of the chamber upper wall and the valve upper wall generated as the length of the chamber upper wall and the valve upper wall decreases. Chemical vapor deposition apparatus. The method of claim 1, And the reinforcing member is provided on the upper wall of the valve. The method of claim 3, The reinforcement member is a chemical vapor deposition apparatus for a flat panel display, characterized in that the metal material. The method of claim 4, wherein The reinforcing member is a chemical vapor deposition apparatus for a flat display, characterized in that the H-beam. The method of claim 5, And the H beam is disposed continuously along the sidewall surface length of the chamber on the upper surface of the valve upper wall. The method of claim 6, The H-beam is a chemical vapor deposition apparatus for a flat display, characterized in that the bolt is fixed at the position. The method of claim 1, And the opening area of the chamber slot and the valve slot are the same. The method of claim 1, And the chamber upper wall and the valve upper wall have the same length. The method of claim 1, And the reinforcing member is at least one reinforcing bar integrally embedded in at least one of the chamber upper wall and the valve upper wall. The method of claim 1, The planar display is a chemical vapor deposition apparatus for a flat panel display, characterized in that the large glass substrate for liquid crystal display (LCD).

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