KR20150053593A - Chemical Vapor Deposition apparatus for Flat Display - Google Patents

Abstract

Disclosed is a chemical vapor deposition apparatus for a flat panel display. According to an embodiment of the present invention, the chemical vapor deposition apparatus for the flat panel display comprises: a process chamber progressing a deposition process to a substrate for the flat panel display, and having an upper electrode which sprays process gas to the inside; a lower electrode connected to the process chamber and supporting the substrate for the flat panel display; a slope sensing unit supported on the lower electrode and sensing a slope of the lower electrode against the upper electrode; a slope adjusting unit connected to the lower electrode and adjusting the slope of the lower electrode; and a control unit connected to the slope sensing unit and the slope adjusting unit wirelessly or over wires, and controlling the slope adjusting unit according to a sensing signal of the slope sensing unit.

Description

[0001] Chemical Vapor Deposition Apparatus for Flat Display [0002]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a chemical vapor deposition apparatus for a flat panel display, and more particularly, to a chemical vapor deposition apparatus for a flat panel display capable of improving film uniformity and productivity.

Flat displays are widely used in personal computers, monitors for TVs and computers. Such a flat display is variously classified into an LCD (Liquid Crystal Display), a PDP (Plasma Display Panel) and an OLED (Organic Light Emitting Diodes).

Among these flat displays, in particular, an organic light emitting display (OLED) is a cemented carbide thin film display device which realizes a color image by self-emission of an organic substance. In view of its simple structure and high optical efficiency, .

The organic light emitting display OLED includes an anode, a cathode, and organic layers interposed between the anode and the cathode. Here, the organic layers include at least a light emitting layer and may further include a hole injecting layer, a hole transporting layer, an electron transporting layer, and an electron injecting layer in addition to the light emitting layer.

Further, the organic light emitting diode (OLED) is a cemented carbide type display device that implements a color image by self-emission of an organic material, and has been attracting attention as a next generation promising flat display because of its simple structure and high optical efficiency.

In order to manufacture such a substrate for an organic light emitting diode (OLED), an inorganic material deposition process and a patterning process for forming a TFT (Thin Film Transistor) are repeatedly performed on a substrate, and then an organic material deposition for forming a light emitting cell is performed .

Typically, an inorganic material deposited on a substrate for an organic light emitting diode (OLED) is deposited by a chemical vapor deposition process (CVD). This is because such a chemical vapor deposition process is advantageous for forming various thin films.

Description of the Related Art A CVD (Chemical Vapor Deposition) process, which is one of the deposition processes for manufacturing a substrate for an organic light emitting diode (OLED), will be briefly described. In the chemical vapor deposition process, ), A silicon compound ion having high energy is ejected from a gas distribution plate through an electrode to be deposited on a substrate, and the chemical vapor deposition process is performed in a process chamber.

In recent years, chemical vapor deposition apparatuses having a plurality of process chambers arranged at regular intervals are widely used so that many substrates can be processed in a short time.

The chemical vapor deposition apparatus for a flat panel display according to the related art for the chemical vapor deposition process includes a processing chamber in which a deposition process is performed, an upper electrode provided in the process chamber, A lower electrode on which the substrate is mounted, and a RF power unit for applying RF power to the upper electrode.

In such a conventional chemical vapor deposition apparatus, a RF power is applied to an upper electrode of a substrate by placing a substrate between an upper electrode and a lower electrode, and then a process gas is injected into the process chamber. Lt; / RTI >

However, in the chemical vapor deposition process, the inside of the process chamber is maintained at a high temperature (approximately 200 to 400 degrees), so that the lower electrode or the like is thermally deformed by the high temperature. In particular, the phenomenon of sagging of the lower electrode supporting the substrate frequently occurs. Such sagging of the lower electrode makes the gap between the upper electrode and the lower electrode uneven.

That is, a case in which the lower electrode is not parallel to the upper electrode due to the deformation of the lower electrode after the predetermined number of deposition processes is performed, and is tilted (the lower electrode is inclined at a predetermined angle with respect to the upper electrode) . If the lower electrode is not parallel to the upper electrode and is inclined, the uniformity of the film quality in the deposition process becomes poor.

Therefore, in the chemical vapor deposition apparatus according to the related art, adjustment work is required to stop the deposition process after a predetermined number of deposition processes and correct the tilted state of the lower electrode.

Since the adjustment is manually performed by the operator, the accuracy is low and it takes a long time. In addition, the process chamber must be cooled for work, and this cooling time is a factor in lowering productivity.

Therefore, the chemical for a flat display which can automate the adjustment operation of adjusting the lower electrode tilted with respect to the upper electrode to a state parallel to the upper electrode (i.e., a gap between the upper electrode and the lower electrode is uniform) A vapor deposition apparatus is required.

Korean Patent Laid-Open Publication No. 10-2002-0074242 (Apex Co., Ltd.), September 30, 2002.

SUMMARY OF THE INVENTION Accordingly, it is an object of the present invention to provide a chemical vapor deposition apparatus for a flat panel display capable of automating an adjustment operation of adjusting a lower electrode inclined with respect to an upper electrode in parallel with an upper electrode.

According to an aspect of the present invention, there is provided a plasma display apparatus comprising: a process chamber in which a deposition process is performed on a substrate for a flat display, and an upper electrode for spraying a process gas is provided; A lower electrode connected to the process chamber and supporting the substrate for a flat display; A tilt sensing unit supported on the lower electrode and sensing a tilt of the lower electrode with respect to the upper electrode; A tilt adjusting unit connected to the lower electrode and adjusting a tilt of the lower electrode; And a control unit connected to the tilt sensing unit and the tilt adjusting unit in a wireless or wired manner and controlling the tilt adjusting unit according to a sensing signal of the tilt sensing unit, .

The inclination adjusting unit may include a plurality of lower electrode pressing modules that are spaced apart from each other and press each of the lower electrodes independently.

The lower electrode pressing module may be located at the same distance from each other with respect to a virtual center axis of the lower electrode.

The lower electrode pressing module includes: an LM block coupled to the lower electrode; An LM guide for guiding the movement of the LM block; And an EL block driving unit for moving the EL block.

The EL block driving unit includes: a driving motor; A ball screw coupled to the drive motor; And a screw nut engaged with the ball screw and coupled to the elbow block.

The tilt sensing unit may include a plurality of main sensing sensors spaced apart from each other.

The main sensing sensors may be located at the same distance from each other with respect to a virtual center axis of the lower electrode.

The tilt sensing unit may further include an auxiliary sensing sensor disposed at a virtual center axis of the lower electrode.

The main sensing sensor and the auxiliary sensing sensor may be a load cell.

The lower electrode is disposed inside the process chamber, and the susceptor is loaded with the substrate for a flat display; A susceptor up / down driver connected to the susceptor for up / down the susceptor; And a tilt adjusting plate connected to the susceptor up / down driving unit and coupled to the tilt adjusting unit.

The tilt adjustment plate may be disposed outside the process chamber.

The process chamber may include a lower electrode support for supporting the tilt adjusting plate.

The lower electrode support part includes a guide member protruding from a lower wall of the process chamber and fitted in a through hole formed in the tilt adjusting plate; And a support member that is engaged with the guide member and supports the tilt adjusting plate.

The substrate for a flat display may be a glass substrate for an organic light emitting diode (OLED), and an opening through which the susceptor up / down driving unit passes may be provided in a central region of the tilt adjusting plate.

In the embodiments of the present invention, after the control unit receives the sensing signal of the tilt sensing unit that senses the tilt of the lower electrode with respect to the upper electrode, the tilt adjusting unit controls the tilt of the lower electrode, It is possible to automate the adjustment operation of adjusting the lower lower electrode parallel to the upper electrode.

1 is a schematic structural view of a chemical vapor deposition apparatus for a flat panel display according to an embodiment of the present invention.
Fig. 2 is a view showing the "A" portion of Fig.
FIG. 3 is a view showing the tilt sensing unit of FIG. 1. FIG.
Fig. 4 is a plan view of Fig. 3. Fig.
Fig. 5 is a view showing the plate for tilt adjustment of Fig. 1. Fig.
6 and Fig. 5 in different directions. Fig.
7 is a view showing the tilt adjusting unit of Fig.
8 is a view showing the lower electrode pressing module of FIG.
FIG. 9 is a view showing a control method of the chemical vapor deposition apparatus for a flat display according to FIG. 1. FIG.

In order to fully understand the present invention, operational advantages of the present invention, and objects achieved by the practice of the present invention, reference should be made to the accompanying drawings and the accompanying drawings which illustrate preferred embodiments of the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. Like reference symbols in the drawings denote like elements.

Prior to the description with reference to the drawings, any of a liquid crystal display (LCD), a plasma display panel (PDP), and an organic light emitting diode (OLED) may be used as the flat panel display. However, the present embodiment adopts an organic light emitting display (OLED).

Hereinafter, for the sake of convenience, the glass substrate for a flat display will be simply referred to as a substrate.

FIG. 1 is a schematic structural view of a chemical vapor deposition apparatus for a flat panel display according to an embodiment of the present invention, FIG. 2 is a view showing the "A" portion of FIG. 1, 5 is a view showing the tilt adjusting plate of FIG. 1, and FIGS. 6 and 5 are viewed from different directions, and FIG. 7 is a view showing the tilt adjustment of FIG. 1, FIG. 8 is a view showing the lower electrode pressing module of FIG. 7, and FIG. 9 is a view showing a control method of the chemical vapor deposition apparatus for a flat display according to FIG.

1 to 9, the chemical vapor deposition apparatus for a flat panel display includes a process chamber 100 in which a deposition process for a substrate (not shown) is performed and an upper electrode 140 for spraying a process gas is provided, A lower electrode 130 connected to the process chamber 100 and supporting a substrate (not shown), and a lower electrode 130 supported by the lower electrode 130 and sensing a slope of the lower electrode 130 with respect to the upper electrode 140 A tilt adjusting unit 300 connected to the lower electrode 130 to adjust a tilt of the lower electrode 130 and a tilt adjusting unit 300 connected to the tilt detecting unit 200 and the tilt adjusting unit 300, And a control unit 400 connected to the trolley and controlling the tilt adjusting unit 300 according to a detection signal of the tilt detecting unit 200.

The process chamber 100 includes an upper chamber 110 and a lower chamber 120. In this process chamber 100, the upper chamber 110 and the lower chamber 120 form a body to form a deposition space S therein.

In addition, the process chamber 100 isolates the deposition space S from the outside so that the deposition space S can be maintained in a vacuum atmosphere when the deposition process proceeds.

Inside the upper chamber 110, the upper electrode 140 is disposed along the lateral direction. The upper electrode 140 includes a gas distribution plate 145 facing the lower chamber 120, And a rear plate 141 disposed behind the gas distribution plate 145 with a buffer space Y between the gas distribution plate 145 therebetween.

A plurality of orifices (not shown) for distributing a gas in a plasma state for a deposition process to a deposition space S formed in the process chamber 100 are formed along the thickness direction of the gas distribution plate 145 .

Between the gas distribution plate 145 and the rear plate 141, a present holding member 143 is provided. The current holding member 143 not only shields the buffer space Y so as to prevent the evaporation material in the buffer space Y from leaking out but also suspends the gas distribution plate 145 against the rear plate 141. [ In addition, the current holding member 143 also serves to compensate for the thermal expansion of the gas distribution plate 145 heated to about 200 ° C. in at least one of the X-axis, Y-axis, and Z-axis directions during the deposition process.

An insulator 117 is provided between the rear plate 141 and the upper chamber 110 so that the rear plate 141 is in direct contact with the outer wall of the upper chamber 110 and is not energized. The insulator 117 may be made of Teflon or the like. Around the rear plate 141, a plate support (not shown) for supporting the rear plate 141 with respect to the upper chamber 110 is further provided.

An upper plate 113 is provided at an upper end of the upper chamber 110. The upper plate 113 serves to cover an upper portion of the upper chamber 110 and also supports and supports a support plate (not shown).

The support plate (not shown) is provided with a gas supply unit 115 for supplying a process gas to the upper portion thereof, a rear plate 141 coupled to the upper chamber 110, and a connection line 111, A high frequency power supply unit 112 connected to the high frequency power supply unit 112, and the like.

With this configuration, the process gas supplied from the gas supply unit 115 can be supplied to the buffer space Y and the rear plate 141 can be supplied with the high frequency power supplied by the high frequency power supply unit 112 The process gas introduced into the buffer space Y can be converted into plasma.

Next, referring to the lower chamber 120, the lower chamber 120 is a portion where the deposition process for the substrate (not shown) proceeds, and the deposition space S described above is formed in the lower chamber 120 do.

Although not shown, a gas diffusion plate (not shown) for diffusing the process gas existing in the deposition space S into the deposition space S is provided in the bottom surface area of the lower chamber 120.

A susceptor 131, which will be described later, of the lower electrode 130 is disposed in the lower chamber 120. For convenience of explanation, the susceptor 131 will be described later.

Meanwhile, the process chamber 100 further includes a lower electrode support 170 for supporting the lower electrode 130. The lower electrode supporter 170 is inserted into the through hole 137 formed in the tilt adjusting plate 136 of the lower electrode 130, which protrudes from the lower wall of the lower chamber 120, And includes a guide member 171 and a support member 172 which is engaged with the guide member 171 and supports the tilt adjustment plate 136 (to be described later for the sake of convenience).

The guide member 171 is provided in the shape of a bar and the support member 172 is disposed below the tilt adjusting plate 136 Lt; / RTI >

On the other hand, a side wall of the lower chamber 120 is provided with a substrate inlet / outlet 121 which is opened / closed by a gate valve (160) to form a space through which a substrate (not shown)

The gate valve 160 opens and closes the substrate entrance 121. The gate valve 160 includes a valve housing 161 through which a substrate (not shown) enters and exits, a valve blade 162 for opening / closing the substrate inlet 121; a blade up / down valve 160 connected to the valve blade 162 for up / down the valve blade 162; And an up / down moving unit 163.

In this embodiment, the blade up / down moving part 163 is provided as a pressurizing cylinder, and the scope of the present invention is not limited thereto, and the valve blade 162 may be up / down- Various driving means that can be used as the blade up / down moving unit 163 can be used.

The lower electrode 130, on the other hand, is connected to the process chamber 100 and supports a substrate (not shown). The lower electrode 130 includes a susceptor 131 disposed inside the process chamber 100 and loaded with a substrate (not shown), a susceptor 131 connected to the susceptor 131, A susceptor up / down driving unit 135 for up / down driving the susceptor, and a susceptor up / down driving unit 135 connected to the tilt adjusting unit 300 And a plate 136 for adjusting the tilt.

The susceptor 131 supports the substrate (not shown) laterally disposed in the deposition space S in the lower chamber 120 to be loaded. The upper surface of the susceptor 131 is substantially a surface plate (not shown) so that the substrate (not shown) can be accurately loaded in a horizontal state. .

The susceptor 131 also has a plurality of lift pins 132 for stably supporting the lower surface of a substrate (not shown) to be loaded or unloaded. The lift pins 132 are installed on the susceptor 131 through the susceptor 131.

When the susceptor 131 is lowered, the lower end of the lift pin 132 is pressed against the bottom surface of the lower chamber 120, and the upper end of the lift pin 132 protrudes to the upper end of the susceptor 131. The protruded upper end of the lift pin 132 lifts the substrate (not shown) upward, so that the substrate (not shown) is separated from the susceptor 131.

Conversely, when the susceptor 131 floats, the lift pin 132 moves downward with respect to the upper surface of the susceptor 131, and a substrate (not shown) is brought into close contact with the upper surface of the susceptor 131.

Further, the susceptor 131 is up / down in the deposition space S in the lower chamber 120 by the susceptor up / down driving unit 135. That is, when the substrate (not shown) is loaded, it is disposed in the bottom surface area of the lower chamber 120. When the deposition process is performed, the substrate (not shown) floats so as to be adjacent to the gas distribution plate 145.

The susceptor up / down driving unit 135 is connected to the susceptor 131 to up / down the susceptor 131 and is coupled to the tilt adjusting plate 136. The susceptor up / down driving unit 135 includes a column 133 for supporting the susceptor 131 to be movable up and down, and a lift unit 150 for moving the column 133 up and down.

The upper end of the column 133 is fixed to the center region of the rear surface of the susceptor 131 and the lower end of the column 133 is exposed downward through the lower chamber 120 to be coupled to the elevation portion 150.

A space should not be generated between the column 133 and the lower chamber 120 during the ascending and descending of the susceptor 131 by the susceptor up / down driving unit 135. The bellows tube 151 is provided in the corresponding region of the lower chamber 120 through which the column 133 passes to surround the outside of the column 133.

On the other hand, if the susceptor 131 is heavy and has a large size, it may be deflected by the susceptor 131. This may be caused by deflection of a substrate (not shown) loaded on the upper surface of the susceptor 131. [

Therefore, the lower electrode 130 may further include a susceptor support portion 134 for supporting the susceptor 131 to prevent the susceptor 131 from sagging. The susceptor supporting portion 134 is connected to the lower wall of the susceptor 131 and stably supports the susceptor 131. However, the scope of right of the present invention is not limited thereto, and the susceptor support portion 134 may be omitted if the susceptor 131 is not deflected.

On the other hand, the tilt adjusting plate 136 is connected to the susceptor up / down driving unit 135 and is coupled to the tilt adjusting unit 300. The tilt adjustment plate 136 is disposed outside the process chamber 100.

The tilt adjusting plate 136 is formed with a through hole 137 through which the guide member 171 described above is inserted. In the present embodiment, the tilt adjusting plate 136 has a rectangular plate shape. In the central region of the tilt adjusting plate 136, the above-described susceptor up / down driving unit 135 (138).

The tilt adjusting plate 136 is provided with a connecting member 139 attached to a lower wall of the tilt adjusting plate 136 and extending downward to be coupled to the tilt adjusting unit 300.

The tilt sensing unit 200 is supported on the lower electrode 130 and senses the inclination of the lower electrode 130 with respect to the upper electrode 140. The tilt sensing unit 200 includes a plurality of main sensing sensors 210 spaced apart from each other.

These main sensing sensors 210 are located at the same distance from each other with respect to the imaginary central axis of the lower electrode 130. That is, the main sensing sensors 210 are spaced apart from each other near the edge of the susceptor 131.

In this embodiment, four main sensors 210 are provided. However, the scope of the present invention is not limited thereto, and a plurality of main sensors 210 may be provided.

The main sensing sensor 210 contacts and pressurizes the gas distribution plate 145 of the upper electrode 140 by the rising of the susceptor 131 to measure the pressing force. At this time, when the susceptor 131 is tilted with respect to the gas distribution plate 145, the magnitude of the pressing force measured by each main sensing sensor 210 is different.

The angle at which the lower electrode 130 is tilted with respect to the upper electrode 140 can be determined by the magnitude of the pressing force measured in this manner.

In addition, the tilt sensing unit 200 according to the present embodiment further includes an auxiliary sensing sensor 220 disposed at a virtual center axis of the lower electrode 130. The auxiliary sensing sensor 220 contacts the gas distribution plate 145 by the rise of the susceptor 131 and measures the pressing force like the main sensing sensor 210 disposed near the edge of the susceptor 131 .

At this time, the pressing force value measured by the auxiliary detecting sensor 220 is arranged at the imaginary center axis of the lower electrode 130, so that the pressing force value measured by the main detecting sensor 210 is changed to a reference .

As described above, the tilt sensing unit 200 according to the present embodiment includes the auxiliary sensing sensor 220 disposed at the imaginary central axis of the lower electrode 130, thereby improving the accuracy of tilt sensing.

In the present embodiment, a load cell is used for the main sensing sensor 210 and the auxiliary sensing sensor 220. However, the scope of the present invention is not limited thereto, and various sensing sensors capable of recognizing the magnitude of the pressing force Can be used as the main sensing sensor 210 and the auxiliary sensing sensor 220 of the present invention.

The tilt sensing unit 200 according to the present embodiment further includes a sensor jig (not shown) to which each main sensing sensor 210 and the auxiliary sensing sensor 220 are mounted.

The tilt sensing unit 200 may be inserted into the process chamber 100 during initial setting or during use of the chemical vapor deposition apparatus for a flat panel display and supported by the susceptor 131, And is taken out of the process chamber 100 after the setting of the chemical vapor deposition apparatus is completed.

That is, the tilt sensing unit 200 according to the present embodiment is not disposed in the process chamber 100 during the deposition process, so that it does not interfere with the deposition process.

On the other hand, the tilt adjusting unit 300 is connected to the lower electrode 130 and adjusts the tilt of the lower electrode 130. The tilt adjustment unit 300 includes a plurality of lower electrode pressing modules 310 arranged to be spaced apart from each other and each pressurizing the lower electrodes 130 independently.

The lower electrode pressurizing module 310 is coupled to a lower frame 500 disposed below the process chamber 100 and supporting the process chamber 100.

Also, the lower electrode pressing module 310 is positioned at the same distance from each other with respect to the imaginary center axis of the lower electrode 130.

In the present embodiment, four lower electrode pressing modules 310 are provided and spaced apart from each other. The present invention is not limited thereto, and a plurality of lower electrode pressing modules 310 may be provided.

The lower electrode pressing module 310 includes an LM block 311 coupled to the lower electrode 130, an LM guide 312 for guiding the movement of the LM block 311, And an EL block driving unit 313 for moving the LED 311.

In this embodiment, the EL block 311 is coupled to a connecting member 139 provided on the tilt adjusting plate 136. [

The EL block driving section 313 includes a driving motor 314, a ball screw 315 coupled to the driving motor 314, a screw nut 315 engaged with the ball screw 315 and coupled to the EL block 311 (Not shown).

Meanwhile, the control unit 400 is connected to the tilt sensing unit 200 and the tilt adjusting unit 300 wirelessly or by wire, and controls the tilt adjusting unit 300 according to the sensing signal of the tilt sensing unit 200.

The controller 400 independently controls the plurality of lower electrode pressing modules 310 according to the sensing signal of the tilt sensing unit 200 so that the lower electrode 130 is parallel to the upper electrode 140, Adjust to one state.

Hereinafter, the operation of the chemical vapor deposition apparatus for a flat panel display according to this embodiment will be described.

First, the tilt sensing unit 200 is inserted into the process chamber 100 and supported on the susceptor 131 before the deposition process of the chemical vapor deposition apparatus for a flat display is performed.

Then, the susceptor 131 rises to bring the main sensing sensors 210 of the tilt sensing unit 200 into contact with the upper electrode 140. At this time, when the susceptor 131 is tilted with respect to the gas distribution plate 145, the pressing forces measured by the main sensing sensors 210 are different from each other.

The pressing force recognized by the tilt sensing unit 200 is transmitted to the control unit 400 and the control unit 400 controls the tilt adjusting unit 300 according to the pressing force recognized by the tilt sensing unit 200.

The controller 400 independently controls each of the lower electrode pressing modules 310 to adjust the lower electrode 130 in parallel with the upper electrode 140. That is, the controller 400 independently raises or lowers the respective EL blocks 311 of the lower electrode pressing modules 310.

Since the lower electrode 130 is installed substantially parallel to the upper electrode 140 during the initial setting of the chemical vapor deposition apparatus for a flat display, the movement amount of the EL block 311 is about millimeters It is a smile street.

The tilt sensing unit 200 is taken out to the outside of the process chamber 100 after the lower electrode 130 is arranged in parallel with the upper electrode 140 by the tilt adjusting unit 300, A deposition process is performed.

After the predetermined number of deposition processes are performed, an operation of correcting the inclination of the lower electrode 130 with respect to the upper electrode 140 is performed.

At this time, the orientation of the lower electrode 130 can be corrected by controlling the tilt adjusting unit 300 according to the database stored in advance, and the tilt adjusting unit 300 can be inserted into the process chamber 100, The posture of the user 130 may be corrected.

As described above, the chemical vapor deposition apparatus for a flat panel display according to the present invention is configured such that the control unit 400 receives the detection signal of the tilt sensing unit 200 that senses the tilt of the lower electrode 130 with respect to the upper electrode 140 The rear controller 400 controls the tilt adjusting unit 300 to adjust the tilt of the lower electrode 130 so that the lower electrode 130 tilted with respect to the upper electrode 140 is in a state parallel to the upper electrode 140 Can be automated.

Therefore, it is possible to shorten the operation time of the adjustment operation of adjusting the lower electrode 130 to be parallel to the upper electrode 140, and this adjustment operation can be performed in a cooling process of the process chamber 100, The productivity can be improved.

Although the present invention has been described in detail with reference to the above drawings, the scope of the scope of the present invention is not limited to the above-described drawings and description.

It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the invention. Accordingly, such modifications or variations are intended to fall within the scope of the appended claims.

100: process chamber 110: upper chamber
112: a high frequency power supply unit 113:
115: gas supply unit 117: insulator
120: lower chamber 121: substrate entrance
130: lower electrode 131: susceptor
132: Lift pin 133: Column
134: susceptor supporting part 135: susceptor up / down driving part
136: plate for tilt adjustment 137: through hole
138: aperture hole 139: connecting member
140: upper electrode 141: rear plate
143: current holding member 145: gas distribution plate
150: elevating part 151: bellows pipe
160: gate valve 161: valve housing
162: Slit valve blade 163: Blade up / down moving part
170: lower electrode supporting portion 171: guide member
172: support member 200: tilt detection unit
210: main sensing sensor 220: auxiliary sensing sensor
300: tilt adjustment unit 310: lower electrode pressing module
311: ELB block 312: ELM guide
313: EL block driving unit 314: driving motor
315: Ball Screw 400:
500: Lower frame

Claims (14)

A process chamber in which a deposition process is performed on a substrate for a flat display and in which an upper electrode for spraying a process gas is provided;
A lower electrode connected to the process chamber and supporting the substrate for a flat display;
A tilt sensing unit supported on the lower electrode and sensing a tilt of the lower electrode with respect to the upper electrode;
A tilt adjusting unit connected to the lower electrode and adjusting a tilt of the lower electrode; And
And a control unit connected to the tilt sensing unit and the tilt adjusting unit in a wireless or wired manner and controlling the tilt adjusting unit according to a sensing signal of the tilt sensing unit. The method according to claim 1,
Wherein the tilt adjustment unit comprises a plurality of lower electrode pressing modules that are spaced apart from each other and press each of the lower electrodes independently. 3. The method of claim 2,
The lower electrode pressing module includes:
Wherein the lower electrode is located at the same distance from the imaginary central axis of the lower electrode. 3. The method of claim 2,
The lower electrode pressing module includes:
An LM block coupled to the lower electrode;
An LM guide for guiding the movement of the LM block; And
And an EL block driving unit for moving the EL block. 5. The method of claim 4,
The EL block driving unit includes:
A drive motor;
A ball screw coupled to the drive motor; And
And a screw nut coupled to the ball screw and coupled to the EL block. The method according to claim 1,
The tilt sensing unit includes:
A chemical vapor deposition apparatus for a flat display, comprising: a plurality of main sensing sensors arranged to be spaced apart from each other. The method according to claim 6,
The main sensing sensor includes:
Wherein the lower electrode is located at the same distance from the imaginary central axis of the lower electrode. The method according to claim 6,
The tilt sensing unit includes:
Further comprising an auxiliary sensing sensor disposed at an imaginary central axis of the lower electrode. 9. The method of claim 8,
Wherein the main sensing sensor and the auxiliary sensing sensor comprise a load cell. The method according to claim 1,
The lower electrode may include:
A susceptor disposed inside the process chamber and loaded with the substrate for a flat display;
A susceptor up / down driver connected to the susceptor for up / down the susceptor; And
And a tilt adjusting plate connected to the susceptor up / down driving unit and coupled to the tilt adjusting unit. 11. The method of claim 10,
Wherein the tilt adjusting plate is disposed outside the process chamber. 11. The method of claim 10,
Wherein the process chamber includes a lower electrode support for supporting the tilt adjusting plate. 13. The method of claim 12,
The lower electrode supporter may include:
A guide member protruding from a lower wall of the process chamber and fitted in a through hole formed in the tilt adjusting plate; And
And a support member which is engaged with the guide member and supports the tilt adjusting plate. 11. The method of claim 10,
The flat panel display substrate is a glass substrate for an organic light emitting diode (OLED)
And an opening through which the susceptor up / down driving unit passes is formed in a central region of the tilt adjusting plate.

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