WO2008123300A1 - Plasma processing apparatus - Google Patents
Plasma processing apparatus Download PDFInfo
- Publication number
- WO2008123300A1 WO2008123300A1 PCT/JP2008/055707 JP2008055707W WO2008123300A1 WO 2008123300 A1 WO2008123300 A1 WO 2008123300A1 JP 2008055707 W JP2008055707 W JP 2008055707W WO 2008123300 A1 WO2008123300 A1 WO 2008123300A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- region
- generating section
- plasma generating
- radiating plate
- plasma
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
- H01J37/32495—Means for protecting the vessel against plasma
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
Abstract
A plasma processing apparatus is provided with a plasma generating section which generates plasma by using an antenna array wherein a plurality of antenna elements, each of which is composed of a bar-like conductor whose surface is coated with a dielectric material, are arranged at prescribed intervals; and a gas radiating section, which is arranged to cover the plasma generating section and has a gas radiating plate arranged above the antenna array. When the antenna element and the radiating plate are viewed from a direction vertical to the surface of the substrate to be processed, a plurality of gas discharge ports opened to the plasma generating section are formed on the radiating plate in a first region that matches with a region between the antenna elements of the plasma generating section, and the gas discharge port is not formed in a second region that matches with the region where the antenna element is positioned. Thus, even when a film forming area is large, film forming speed can be improved, generation of particles is suppressed and films having excellent uniformity in qualities and thickness can be formed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008551372A JP4554712B2 (en) | 2007-03-30 | 2008-03-26 | Plasma processing equipment |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007-091844 | 2007-03-30 | ||
JP2007091844 | 2007-03-30 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2008123300A1 true WO2008123300A1 (en) | 2008-10-16 |
Family
ID=39830788
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2008/055707 WO2008123300A1 (en) | 2007-03-30 | 2008-03-26 | Plasma processing apparatus |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP4554712B2 (en) |
TW (1) | TWI360165B (en) |
WO (1) | WO2008123300A1 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI742632B (en) * | 2019-04-26 | 2021-10-11 | 日商日新電機股份有限公司 | Sputtering device |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03122281A (en) * | 1989-10-06 | 1991-05-24 | Anelva Corp | Cvd device |
JP2000331993A (en) * | 1999-05-19 | 2000-11-30 | Mitsubishi Electric Corp | Plasma processing device |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4452061B2 (en) * | 2003-11-14 | 2010-04-21 | 三井造船株式会社 | Method of matching antenna for plasma generator and plasma generator |
-
2008
- 2008-03-26 JP JP2008551372A patent/JP4554712B2/en not_active Expired - Fee Related
- 2008-03-26 WO PCT/JP2008/055707 patent/WO2008123300A1/en active Application Filing
- 2008-03-28 TW TW97111417A patent/TWI360165B/en not_active IP Right Cessation
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03122281A (en) * | 1989-10-06 | 1991-05-24 | Anelva Corp | Cvd device |
JP2000331993A (en) * | 1999-05-19 | 2000-11-30 | Mitsubishi Electric Corp | Plasma processing device |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI742632B (en) * | 2019-04-26 | 2021-10-11 | 日商日新電機股份有限公司 | Sputtering device |
Also Published As
Publication number | Publication date |
---|---|
JP4554712B2 (en) | 2010-09-29 |
TWI360165B (en) | 2012-03-11 |
TW200917341A (en) | 2009-04-16 |
JPWO2008123300A1 (en) | 2010-07-15 |
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