JPS615515A - Chemical vapor growth apparatus - Google Patents
Chemical vapor growth apparatusInfo
- Publication number
- JPS615515A JPS615515A JP11713384A JP11713384A JPS615515A JP S615515 A JPS615515 A JP S615515A JP 11713384 A JP11713384 A JP 11713384A JP 11713384 A JP11713384 A JP 11713384A JP S615515 A JPS615515 A JP S615515A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- squirting
- gases
- out part
- section
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45561—Gas plumbing upstream of the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45576—Coaxial inlets for each gas
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
ｔｉ）発明の技術分野
本発明は化学気相成長装置、詳しくは減圧化学気相成長
装置におけるガス吹出し部の構造に関する。DETAILED DESCRIPTION OF THE INVENTION ti) Technical Field of the Invention The present invention relates to a chemical vapor deposition apparatus, and more particularly to a structure of a gas blowing section in a reduced pressure chemical vapor deposition apparatus.
（２）技術の背景
試料例えばシリコンウェハ上に薄膜を化学気相成長（Ｃ
ＶＤ）法によって形成す′る場合、例えばウェハ上にタ
ングステンシリサイド（’ＷＳｉｚ ）の薄膜を成長さ
せるときには、第１図に模式的断面図で示すＣＶＤ装置
が用いられ、同図において、１は反応チャンバ、２はウ
ェハ、３はガス吹出し部、４はウェハ２を３００℃〜４
５０℃程度に加熱するためのヒータ、５はモノシランガ
ス（５ｉＨｑ ）ボンベ、６は６弗化タングステン（Ｉ
ＩＦ６）ボンベ、７は希釈用のヘリウム（１（ｅ）ガス
ボンへ、８はチャンノ、イ１内を真空に保つための真空
ポンプに連結された排気口である。ガス吹出し部３には
ウェハに面する底部に複数の孔が設けられ、これらの孔
からシャワー状に出たガスの反応によりてウェハ上にｉ
ｓ膜が形成される。(2) Background of the technology For example, a thin film is formed on a silicon wafer by chemical vapor deposition (C
For example, when growing a thin film of tungsten silicide ('WSiz) on a wafer, a CVD apparatus shown in a schematic cross-sectional view in Figure 1 is used. Chamber, 2 is the wafer, 3 is the gas blowing part, 4 is the wafer 2 at 300℃~4
A heater for heating to about 50°C, 5 a monosilane gas (5iHq) cylinder, 6 a tungsten hexafluoride (I
IF6) cylinder, 7 is a helium gas cylinder for dilution (1(e)), 8 is a channel, and an exhaust port connected to a vacuum pump to keep the inside of 1 in a vacuum. A plurality of holes are provided on the facing bottom, and the reaction of the gas emitted from these holes in a shower form causes i
s film is formed.
（３）従来技術と問題点
上記の装置の使用において、反応ガスが吹出し部３内で
反応して―Ｓｉ２が孔の中に形成され、または前記した
底部上に成膜し、その結果孔がつまり、孔をクリーンに
するためにＣＶＤ装置を停止しなければならず、また前
記した底部上の膜がはがれてウェハに付着するなどの問
題が発生し泥。(3) Prior Art and Problems In the use of the above-mentioned device, the reaction gas reacts in the blow-off part 3 and Si2 is formed in the pores or deposited on the bottom, as a result of which the pores are In other words, the CVD equipment must be stopped to clean the holes, and problems such as the film on the bottom peeling off and adhering to the wafer may occur.
（４）発明の゛目的
本発明は上記従来の問題に鑑み、化学気相成膜装置にお
いて、導入したガスを吹き出す部分における２種類のガ
スの反応によりガス吹出し部の孔のつまりが防止された
ＣＶＤ装置を提供することを目的とする。(4) Purpose of the invention In view of the above-mentioned conventional problems, the present invention provides a chemical vapor deposition apparatus in which clogging of holes in a gas blowing part is prevented by a reaction between two types of gases in a part blowing out introduced gas. The purpose is to provide a CVD device.
（５）発明の構成
そしてこの目的は本発明によれば、第１と第２の２種類
のガスをチャンバ内で反応させ試料表面に薄膜を成長す
るようにした導入ガスの吹出し部を断面凹字型に形成し
、第１のガスは凹字型の突出部分から、第２のガスは凹
字型の底部からそれぞれ別々に吹き出す構成としたこと
を特徴とする化学気相成長装置を提供することによって
達成される。 −。(5) Structure and object of the invention According to the present invention, the introduction gas blow-out part has a concave cross section so that two types of gases, first and second, react in the chamber and a thin film is grown on the sample surface. To provide a chemical vapor deposition apparatus characterized in that the first gas is blown out from the protruding part of the concave shape, and the second gas is blown out separately from the bottom of the concave shape. This is achieved by −.
（６）発明の実施例 以下本発明の実施例を図面によって詳述する。(6) Examples of the invention Embodiments of the present invention will be described in detail below with reference to the drawings.
第２図に本発明にかかる導入ガス吹出し部が断面図で示
され、同図において、１１は断面凹字型のガス吹出し部
、１２は第１ガス吹出し部、１３は第２ガス吹出し部、
１４ば第１ガス導入管、１５は第２ガス導入管を示す。FIG. 2 shows a cross-sectional view of the introduced gas blowing part according to the present invention, in which 11 is a gas blowing part with a concave cross section, 12 is a first gas blowing part, 13 is a second gas blowing part,
Reference numeral 14 indicates a first gas introduction pipe, and reference numeral 15 indicates a second gas introduction pipe.
第１ガス吹出し部１２は断面凹字型部分の突出部分に形
成され、凹字型部の底部分に第２ガス吹出し部１３が設
けられている。そして図にそれぞれＡ、Ｂで示す第１ガ
スと第２ガスは、ガス吹出し部１１内では混合すること
なく、別々にそれぞれの吹出し部から吹き出される。The first gas blowing part 12 is formed at the protruding part of the concave cross-sectional part, and the second gas blowing part 13 is provided at the bottom part of the concave part. The first gas and the second gas, respectively indicated by A and B in the figure, are not mixed in the gas blowing section 11, but are blown out separately from the respective blowing sections.
第１と第２のガスはガス吹出し部１１の近くでは僅かし
か反応しない。すなわち、第１のガスの第２ガス吹出し
部１３の近くにくるものの量はほとんどない程度であり
、また第２のガスはある一定距離を直進するから、２つ
のガスのガス吹出し部１１の近くでの反応は著しく緩和
される。The first and second gases react only slightly near the gas blowing part 11. In other words, the amount of the first gas that comes close to the second gas blowing part 13 is almost negligible, and since the second gas moves straight for a certain distance, the amount of the first gas that comes close to the second gas blowing part 13 The reaction is significantly reduced.
かくして、従来の装置で経験されたガス吹出し孔のつま
りはほぼ完全に防止され、２種類のガスはガス吹出し部
１１の下方に配置された試料例えばシリコンウェハ上で
反応し７、ウェハ表面に薄膜が形成される。In this way, clogging of the gas blow-off holes experienced with conventional devices is almost completely prevented, and the two types of gases react on a sample such as a silicon wafer placed below the gas blow-off section 11, forming a thin film on the wafer surface. is formed.
第３図はガス吹出し部１１の底面図であり、図において
符号１６を付した小円はガス吹出し孔を示す。FIG. 3 is a bottom view of the gas blowing section 11, and the small circles marked with the reference numeral 16 in the figure indicate gas blowing holes.
第１ガス吹出し部Ｉ２の孔の数は、第２ガス吹出し部１
３の孔の数より数多く形成し、それによってウェハ上で
の２つのガスの分布を改善する。The number of holes in the first gas blowing part I2 is the same as that of the second gas blowing part 1.
3, thereby improving the distribution of the two gases on the wafer.
第４図にウェハ上北タングステンシリサイドの薄膜を成
膜するＣＶＤ装置の配置が断面で示され、同図において
第２図に示した部分と同じ部分は同一符号を付して表示
し、１７はモノシランガスボンベ、１８はＩｌｅＨｅガ
スボンベ９はＷＦ６ガスボンベ、２０はＨｅガスボンへ
、２１はバルブ、２２はフローメータを示す。ガスボン
ベとガス導入管の連霧入は図に示したものと逆にし、第
１のガスを吹出し部１３で、第２のガスを吹出し部１２
で吹き出す構成としてもよい。FIG. 4 shows a cross section of the arrangement of a CVD apparatus for forming a thin film of tungsten silicide on a wafer. In the same figure, the same parts as those shown in FIG. 18 is a monosilane gas cylinder, 18 is an IleHe gas cylinder, 9 is a WF6 gas cylinder, 20 is a He gas cylinder, 21 is a valve, and 22 is a flow meter. The continuous atomization of the gas cylinder and the gas introduction pipe is reversed to that shown in the figure, and the first gas is supplied to the outlet 13 and the second gas is supplied to the outlet 12.
It may also be configured to blow out.
なお上記はシリコンウ、エバ表面に−Ｓｉ２膜を形成す
る場合について説明したが、本発明の適用範囲はその場
合に限定されるものではなく、２種類の反応ガスを用い
て試料表面上に薄膜を成長するその他の場合にも及ぶも
のである。Although the above description describes the case where a -Si2 film is formed on the surface of a silicon substrate or evaporator, the scope of application of the present invention is not limited to that case. This also applies to other cases of growth.
（７）発明の効果
以上詳細に説明した如く本発明によれば、２種類の反応
ガスを用いてウェハ上に薄膜を形成するＣＶＩ）装置に
おいて、ガス吹出し部内および間部の近くでのガスの反
応が著しく緩和され、ガス吹出し部内のみならずガス吹
出し部の表面で膜が堆積し孔がつまることが防止される
ので、半導体装置製造の歩留りと製品の信頼性向上に効
果大である。(7) Effects of the Invention As explained in detail above, according to the present invention, in a CVI (CVI) apparatus that forms a thin film on a wafer using two types of reaction gases, gas is The reaction is significantly relaxed and the film is prevented from accumulating not only inside the gas blowing section but also on the surface of the gas blowing section and clogging the pores, which is highly effective in improving the yield of semiconductor device manufacturing and the reliability of the product.
第１図は従来のＣＶＤ装置の断面図、第２図は本発明実
施例の断面図、第３図は第２図の装置の底面図、第４図
は第２図の装置を用いるＣＶＤ装置の配置図である。
１１−−ガス吹出し部、
１２−・第１のガス吹出し部、
１３−第２のガス吹出し部、
１４−第１のガス導入管、
１５−第２のガス導入管、
１６−ガス吹出し孔、
１７−− ５ｉｌｌａガスボンへ、
１８、２Ｏ−−Ｈｅガスボンベ、
１９−−Ｆ６ガスホンへFig. 1 is a sectional view of a conventional CVD apparatus, Fig. 2 is a sectional view of an embodiment of the present invention, Fig. 3 is a bottom view of the apparatus of Fig. 2, and Fig. 4 is a CVD apparatus using the apparatus of Fig. 2. FIG. 11--Gas blow-off part, 12--First gas blow-off part, 13-Second gas blow-off part, 14-First gas introduction pipe, 15-Second gas introduction pipe, 16-Gas blow-off hole, 17--To 5illa gas cylinder, 18, 2O--He gas cylinder, 19--To F6 gas phone
Claims (1)
料表面に薄膜を成長するようにした導入ガスの吹出し部
を断面凹字型に形成し、第１のガスは凹字型の突出部分
から、第２のガスは凹字型の底部からそれぞれ別々に吹
き出す構成としたことを特徴とする化学気相成長装置。Two types of gases, the first and second, react in the chamber to grow a thin film on the surface of the sample.The blowout section for the introduced gas is formed with a concave shape in cross section, and the first gas has a concave-shaped protrusion. A chemical vapor deposition apparatus characterized in that the second gas is separately blown out from the bottom of the concave shape.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11713384A JPS615515A (en) | 1984-06-07 | 1984-06-07 | Chemical vapor growth apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11713384A JPS615515A (en) | 1984-06-07 | 1984-06-07 | Chemical vapor growth apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS615515A true JPS615515A (en) | 1986-01-11 |
Family
ID=14704262
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11713384A Pending JPS615515A (en) | 1984-06-07 | 1984-06-07 | Chemical vapor growth apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS615515A (en) |
Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2643389A1 (en) * | 1989-02-23 | 1990-08-24 | Mikoshiba Nobuo | CHEMICAL VAPOR DEPOSITION APPARATUS FOR FORMING THIN FILM |
| JPH03122281A (en) * | 1989-10-06 | 1991-05-24 | Anelva Corp | Cvd device |
| US5453124A (en) * | 1992-12-30 | 1995-09-26 | Texas Instruments Incorporated | Programmable multizone gas injector for single-wafer semiconductor processing equipment |
| US5532190A (en) * | 1994-05-26 | 1996-07-02 | U.S. Philips Corporation | Plasma treatment method in electronic device manufacture |
| WO1997003223A1 (en) * | 1995-07-10 | 1997-01-30 | Watkins Johnson Company | Gas distribution apparatus |
| US5888907A (en) * | 1996-04-26 | 1999-03-30 | Tokyo Electron Limited | Plasma processing method |
| US6059885A (en) * | 1996-12-19 | 2000-05-09 | Toshiba Ceramics Co., Ltd. | Vapor deposition apparatus and method for forming thin film |
| US6090210A (en) * | 1996-07-24 | 2000-07-18 | Applied Materials, Inc. | Multi-zone gas flow control in a process chamber |
| WO2001016396A1 (en) * | 1999-08-31 | 2001-03-08 | Tokyo Electron Limited | Film deposition apparatus and method |
| US6294026B1 (en) * | 1996-11-26 | 2001-09-25 | Siemens Aktiengesellschaft | Distribution plate for a reaction chamber with multiple gas inlets and separate mass flow control loops |
| US6444039B1 (en) * | 2000-03-07 | 2002-09-03 | Simplus Systems Corporation | Three-dimensional showerhead apparatus |
| US6849133B2 (en) * | 2001-08-17 | 2005-02-01 | Micron Technology, Inc. | CVD apparatuses and methods of forming a layer over a semiconductor substrate |
| US7347900B2 (en) * | 2002-12-17 | 2008-03-25 | Dongbu Electronics Co., Ltd. | Chemical vapor deposition apparatus and method |
| US7572337B2 (en) | 2004-05-26 | 2009-08-11 | Applied Materials, Inc. | Blocker plate bypass to distribute gases in a chemical vapor deposition system |
| US7622005B2 (en) | 2004-05-26 | 2009-11-24 | Applied Materials, Inc. | Uniformity control for low flow process and chamber to chamber matching |
| CN110656317A (en) * | 2019-09-19 | 2020-01-07 | 长江存储科技有限责任公司 | Spray head assembly, deposition equipment and deposition method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55121650A (en) * | 1979-03-14 | 1980-09-18 | Pioneer Electronic Corp | Cvd device |
| JPS5678497A (en) * | 1979-11-27 | 1981-06-27 | Fujitsu Ltd | Vapor growth apparatus |
| JPS56137639A (en) * | 1980-03-31 | 1981-10-27 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Decompression vapor growth device |
-
1984
- 1984-06-07 JP JP11713384A patent/JPS615515A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55121650A (en) * | 1979-03-14 | 1980-09-18 | Pioneer Electronic Corp | Cvd device |
| JPS5678497A (en) * | 1979-11-27 | 1981-06-27 | Fujitsu Ltd | Vapor growth apparatus |
| JPS56137639A (en) * | 1980-03-31 | 1981-10-27 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Decompression vapor growth device |
Cited By (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2643389A1 (en) * | 1989-02-23 | 1990-08-24 | Mikoshiba Nobuo | CHEMICAL VAPOR DEPOSITION APPARATUS FOR FORMING THIN FILM |
| JPH03122281A (en) * | 1989-10-06 | 1991-05-24 | Anelva Corp | Cvd device |
| US5453124A (en) * | 1992-12-30 | 1995-09-26 | Texas Instruments Incorporated | Programmable multizone gas injector for single-wafer semiconductor processing equipment |
| US5532190A (en) * | 1994-05-26 | 1996-07-02 | U.S. Philips Corporation | Plasma treatment method in electronic device manufacture |
| WO1997003223A1 (en) * | 1995-07-10 | 1997-01-30 | Watkins Johnson Company | Gas distribution apparatus |
| US5888907A (en) * | 1996-04-26 | 1999-03-30 | Tokyo Electron Limited | Plasma processing method |
| US6090210A (en) * | 1996-07-24 | 2000-07-18 | Applied Materials, Inc. | Multi-zone gas flow control in a process chamber |
| US6294026B1 (en) * | 1996-11-26 | 2001-09-25 | Siemens Aktiengesellschaft | Distribution plate for a reaction chamber with multiple gas inlets and separate mass flow control loops |
| US6059885A (en) * | 1996-12-19 | 2000-05-09 | Toshiba Ceramics Co., Ltd. | Vapor deposition apparatus and method for forming thin film |
| WO2001016396A1 (en) * | 1999-08-31 | 2001-03-08 | Tokyo Electron Limited | Film deposition apparatus and method |
| KR100448112B1 (en) * | 1999-08-31 | 2004-09-10 | 동경 엘렉트론 주식회사 | Film deposition apparatus and method |
| US6800139B1 (en) | 1999-08-31 | 2004-10-05 | Tokyo Electron Limited | Film deposition apparatus and method |
| US6444039B1 (en) * | 2000-03-07 | 2002-09-03 | Simplus Systems Corporation | Three-dimensional showerhead apparatus |
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