JPS5678497A - Vapor growth apparatus - Google Patents

Vapor growth apparatus

Info

Publication number
JPS5678497A
JPS5678497A JP15342279A JP15342279A JPS5678497A JP S5678497 A JPS5678497 A JP S5678497A JP 15342279 A JP15342279 A JP 15342279A JP 15342279 A JP15342279 A JP 15342279A JP S5678497 A JPS5678497 A JP S5678497A
Authority
JP
Japan
Prior art keywords
reactor
reaction gas
growth
surrounded
inlet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15342279A
Other languages
Japanese (ja)
Other versions
JPS6220160B2 (en
Inventor
Akihiro Shibatomi
Kenya Nakai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP15342279A priority Critical patent/JPS5678497A/en
Publication of JPS5678497A publication Critical patent/JPS5678497A/en
Publication of JPS6220160B2 publication Critical patent/JPS6220160B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45572—Cooled nozzles

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To achieve the growth of a desired eptiaxial crysal at the expected rate of growth, by furnishing the gas inlet to the top of the reaction vessel so as to contact the substrate crystal with the reaction gas stream surrounded with the carrier gas stream.
CONSTITUTION: A susceptor 12 is placed at the center of a cylindrical reactor 11. The side walls of the reactor above the position of the susceptor 12 are cooled forcibly near to the normal temperature with a cooler 19 through which cooling water is circulated. The reactor 11 has a reaction gas inlet 14 at the center of the top part for introducing the reaction gas into the reactor. The reaction gas inlet 14 is surrounded with a carrier gas inlet 15. The carrier gas flows down along the inner wall of the cooled part 19 of the reactor as a laminar flow straightened with a vane 20. Since the reaction gas is surrounded with the carrier gas stream in the course of crystal growth step, and since the gas is not decomposed, the contamination of the walls and inlet of the reactor 11 can be prevented, and the thermal decomposition of the reaction gas ocuurs only at the surface of the substrate crystal 13. Consequently the molar patial pressure can be kept constant, and the expected growth rate can be attained.
COPYRIGHT: (C)1981,JPO&Japio
JP15342279A 1979-11-27 1979-11-27 Vapor growth apparatus Granted JPS5678497A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15342279A JPS5678497A (en) 1979-11-27 1979-11-27 Vapor growth apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15342279A JPS5678497A (en) 1979-11-27 1979-11-27 Vapor growth apparatus

Publications (2)

Publication Number Publication Date
JPS5678497A true JPS5678497A (en) 1981-06-27
JPS6220160B2 JPS6220160B2 (en) 1987-05-06

Family

ID=15562151

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15342279A Granted JPS5678497A (en) 1979-11-27 1979-11-27 Vapor growth apparatus

Country Status (1)

Country Link
JP (1) JPS5678497A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6016898A (en) * 1983-07-08 1985-01-28 Matsushita Electric Ind Co Ltd Gaseous-phase growth device
JPS615515A (en) * 1984-06-07 1986-01-11 Fujitsu Ltd Chemical vapor growth apparatus
JPS61158947U (en) * 1985-03-26 1986-10-02
JPS62152123A (en) * 1985-12-26 1987-07-07 Matsushita Electric Ind Co Ltd Vapor growth equipment
JPH02222134A (en) * 1989-02-23 1990-09-04 Nobuo Mikoshiba Thin film forming apparatus
JPH02142525U (en) * 1990-05-10 1990-12-04
WO1993006619A1 (en) * 1991-09-27 1993-04-01 Komatsu Electronic Metals Co., Ltd. Apparatus for introducing gas, and apparatus and method for epitaxial growth

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5436621U (en) * 1977-08-17 1979-03-10

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5436621U (en) * 1977-08-17 1979-03-10

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6016898A (en) * 1983-07-08 1985-01-28 Matsushita Electric Ind Co Ltd Gaseous-phase growth device
JPS615515A (en) * 1984-06-07 1986-01-11 Fujitsu Ltd Chemical vapor growth apparatus
JPS61158947U (en) * 1985-03-26 1986-10-02
JPH0530351Y2 (en) * 1985-03-26 1993-08-03
JPS62152123A (en) * 1985-12-26 1987-07-07 Matsushita Electric Ind Co Ltd Vapor growth equipment
JPH0545053B2 (en) * 1985-12-26 1993-07-08 Matsushita Electric Ind Co Ltd
JPH02222134A (en) * 1989-02-23 1990-09-04 Nobuo Mikoshiba Thin film forming apparatus
JPH02142525U (en) * 1990-05-10 1990-12-04
WO1993006619A1 (en) * 1991-09-27 1993-04-01 Komatsu Electronic Metals Co., Ltd. Apparatus for introducing gas, and apparatus and method for epitaxial growth

Also Published As

Publication number Publication date
JPS6220160B2 (en) 1987-05-06

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