JPS56161832A - Gaseous phase treatment device - Google Patents

Gaseous phase treatment device

Info

Publication number
JPS56161832A
JPS56161832A JP6200780A JP6200780A JPS56161832A JP S56161832 A JPS56161832 A JP S56161832A JP 6200780 A JP6200780 A JP 6200780A JP 6200780 A JP6200780 A JP 6200780A JP S56161832 A JPS56161832 A JP S56161832A
Authority
JP
Japan
Prior art keywords
gas
gaseous phase
container
silicon
silicon wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6200780A
Other languages
Japanese (ja)
Inventor
Kazuhiro Sugita
Takeyoshi Uchiyama
Toshiro Kato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP6200780A priority Critical patent/JPS56161832A/en
Publication of JPS56161832A publication Critical patent/JPS56161832A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To obtain a gaseous phase treatment device which is excellent in the productivity of silicon wafer, the uniformity of its thickness, and reliability by using a system in which reactant gases are controllably supplied with a carrier gas into a container.
CONSTITUTION: A silicon wafer 7 is placed on a silicon suspector 8, H2 gas displacement is made, and a certain reduced pressure condition is kept while keeping the flow rate of H2 from a nozzle 10 at a fixed value. Then, infrared lamps 2A and 2B are energized to heat them to a given temperature and silane, together with impurities, e.g., PH3, etc., and H2 gas, is introduced into a reactor container 1 through the nozzle 10 for the epitaxial gaseous phase growth of silicon, during which reactant gas 9 is controlled by sequence program for an air-operated valve so as to control the thickwise distribution of silicon film at a right angle to the flow of the reactant gas 9 in the container 1. Also, N2 gas is introduced to a space 13 outside quartz maing windows 3 and 4 and H2 gas is introduced to an inside space 12. After the completion of the epitaxial gaseous phase growth, the infrared lamps are turned off for cooling them. Then, the pressure of the container 1 is restored to ordinary pressure, N2 gas displacement is made, and the silicon wafer 7 is taken out.
COPYRIGHT: (C)1981,JPO&Japio
JP6200780A 1980-05-10 1980-05-10 Gaseous phase treatment device Pending JPS56161832A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6200780A JPS56161832A (en) 1980-05-10 1980-05-10 Gaseous phase treatment device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6200780A JPS56161832A (en) 1980-05-10 1980-05-10 Gaseous phase treatment device

Publications (1)

Publication Number Publication Date
JPS56161832A true JPS56161832A (en) 1981-12-12

Family

ID=13187660

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6200780A Pending JPS56161832A (en) 1980-05-10 1980-05-10 Gaseous phase treatment device

Country Status (1)

Country Link
JP (1) JPS56161832A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6024377A (en) * 1983-07-21 1985-02-07 Canon Inc Method and device for producing deposited film
JPS6034011A (en) * 1983-08-05 1985-02-21 Agency Of Ind Science & Technol Reaction tube
JPS60106335U (en) * 1983-12-24 1985-07-19 株式会社島津製作所 Plasma CVD equipment
JPH01201482A (en) * 1987-10-01 1989-08-14 Nippon Aneruba Kk Vacuum vapor growth device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6024377A (en) * 1983-07-21 1985-02-07 Canon Inc Method and device for producing deposited film
JPS6034011A (en) * 1983-08-05 1985-02-21 Agency Of Ind Science & Technol Reaction tube
JPS60106335U (en) * 1983-12-24 1985-07-19 株式会社島津製作所 Plasma CVD equipment
JPH01201482A (en) * 1987-10-01 1989-08-14 Nippon Aneruba Kk Vacuum vapor growth device

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