JPS5748226A - Plasma processing method and device for the same - Google Patents

Plasma processing method and device for the same

Info

Publication number
JPS5748226A
JPS5748226A JP12370980A JP12370980A JPS5748226A JP S5748226 A JPS5748226 A JP S5748226A JP 12370980 A JP12370980 A JP 12370980A JP 12370980 A JP12370980 A JP 12370980A JP S5748226 A JPS5748226 A JP S5748226A
Authority
JP
Japan
Prior art keywords
gas
plasma processing
plasma
flow
same
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12370980A
Other languages
Japanese (ja)
Inventor
Itaru Yamanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp, Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electronics Corp
Priority to JP12370980A priority Critical patent/JPS5748226A/en
Publication of JPS5748226A publication Critical patent/JPS5748226A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges

Abstract

PURPOSE:To improve the uniformity of processing, by a method wherein plasma processing is performed by adjusting a flow of gas by a controlling piece provided in a supply route of the gas. CONSTITUTION:Reactive gas in bombs 20-22, through flow measuring and controlling equipments 23-25, is introduced into a reaction chamber 4 in which a suscepter 3 on which a wafer 2 is mounted is contained. The flow of the introduced gas is adjusted by a gas controlling piece 7 and plasma processing such as plasma deposition, plasma etching and so forth is performed. With above method the plasma processing is performed uniformly, so that the uniformity of the thickness of the film is improved and yield of production is also enhanced.
JP12370980A 1980-09-05 1980-09-05 Plasma processing method and device for the same Pending JPS5748226A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12370980A JPS5748226A (en) 1980-09-05 1980-09-05 Plasma processing method and device for the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12370980A JPS5748226A (en) 1980-09-05 1980-09-05 Plasma processing method and device for the same

Publications (1)

Publication Number Publication Date
JPS5748226A true JPS5748226A (en) 1982-03-19

Family

ID=14867403

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12370980A Pending JPS5748226A (en) 1980-09-05 1980-09-05 Plasma processing method and device for the same

Country Status (1)

Country Link
JP (1) JPS5748226A (en)

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0066088A2 (en) * 1981-06-02 1982-12-08 International Business Machines Corporation Perforated anode for use in reactive ion etching apparatus
JPS6071137U (en) * 1983-10-19 1985-05-20 富士通株式会社 Plasma CVD equipment
JPS6098629A (en) * 1983-11-02 1985-06-01 Hitachi Ltd Treating equipment
JPS6099974U (en) * 1983-12-13 1985-07-08 遠藤　勇 snow surfing
JPS61192446U (en) * 1985-05-22 1986-11-29
US4718976A (en) * 1982-03-31 1988-01-12 Fujitsu Limited Process and apparatus for plasma treatment
JPS6367241U (en) * 1986-10-21 1988-05-06
JPH0195975U (en) * 1987-12-16 1989-06-26
JPH0195974U (en) * 1987-12-16 1989-06-26
JPH01185277A (en) * 1988-01-21 1989-07-24 Kuniaki Kawahara Surfski-board
US5186756A (en) * 1990-01-29 1993-02-16 At&T Bell Laboratories MOCVD method and apparatus
US5188671A (en) * 1990-08-08 1993-02-23 Hughes Aircraft Company Multichannel plate assembly for gas source molecular beam epitaxy
US5240505A (en) * 1989-08-03 1993-08-31 Mitsubishi Denki Kabushiki Kaisha Method of an apparatus for forming thin film for semiconductor device
US5288327A (en) * 1992-03-12 1994-02-22 Bell Communications Research, Inc. Deflected flow in chemical vapor deposition cell
US5366557A (en) * 1990-06-18 1994-11-22 At&T Bell Laboratories Method and apparatus for forming integrated circuit layers
EP0653500A1 (en) * 1993-11-12 1995-05-17 International Business Machines Corporation CVD reactor for improved film thickness uniformity deposition
US5653806A (en) * 1995-03-10 1997-08-05 Advanced Technology Materials, Inc. Showerhead-type discharge assembly for delivery of source reagent vapor to a substrate, and CVD process utilizing same
US5741363A (en) * 1996-03-22 1998-04-21 Advanced Technology Materials, Inc. Interiorly partitioned vapor injector for delivery of source reagent vapor mixtures for chemical vapor deposition
KR100353210B1 (en) * 1997-02-06 2002-10-19 지멘스 악티엔게젤샤프트 Process for layer production on a surface

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5046074A (en) * 1973-08-28 1975-04-24
JPS54158190A (en) * 1978-06-05 1979-12-13 Yamazaki Shunpei Semiconductor device and method of fabricating same

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5046074A (en) * 1973-08-28 1975-04-24
JPS54158190A (en) * 1978-06-05 1979-12-13 Yamazaki Shunpei Semiconductor device and method of fabricating same

Cited By (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0066088A2 (en) * 1981-06-02 1982-12-08 International Business Machines Corporation Perforated anode for use in reactive ion etching apparatus
US4718976A (en) * 1982-03-31 1988-01-12 Fujitsu Limited Process and apparatus for plasma treatment
JPS6071137U (en) * 1983-10-19 1985-05-20 富士通株式会社 Plasma CVD equipment
JPS6098629A (en) * 1983-11-02 1985-06-01 Hitachi Ltd Treating equipment
JPH0568850B2 (en) * 1983-11-02 1993-09-29 Hitachi Ltd
JPS6099974U (en) * 1983-12-13 1985-07-08 遠藤　勇 snow surfing
JPH051071Y2 (en) * 1985-05-22 1993-01-12
JPS61192446U (en) * 1985-05-22 1986-11-29
JPS6367241U (en) * 1986-10-21 1988-05-06
JPH0195975U (en) * 1987-12-16 1989-06-26
JPH0195974U (en) * 1987-12-16 1989-06-26
JPH01185277A (en) * 1988-01-21 1989-07-24 Kuniaki Kawahara Surfski-board
US5240505A (en) * 1989-08-03 1993-08-31 Mitsubishi Denki Kabushiki Kaisha Method of an apparatus for forming thin film for semiconductor device
US5429991A (en) * 1989-08-03 1995-07-04 Mitsubishi Denki Kabushiki Kaisha Method of forming thin film for semiconductor device
US5186756A (en) * 1990-01-29 1993-02-16 At&T Bell Laboratories MOCVD method and apparatus
US5366557A (en) * 1990-06-18 1994-11-22 At&T Bell Laboratories Method and apparatus for forming integrated circuit layers
US5188671A (en) * 1990-08-08 1993-02-23 Hughes Aircraft Company Multichannel plate assembly for gas source molecular beam epitaxy
US5288327A (en) * 1992-03-12 1994-02-22 Bell Communications Research, Inc. Deflected flow in chemical vapor deposition cell
EP0653500A1 (en) * 1993-11-12 1995-05-17 International Business Machines Corporation CVD reactor for improved film thickness uniformity deposition
US5653806A (en) * 1995-03-10 1997-08-05 Advanced Technology Materials, Inc. Showerhead-type discharge assembly for delivery of source reagent vapor to a substrate, and CVD process utilizing same
US5741363A (en) * 1996-03-22 1998-04-21 Advanced Technology Materials, Inc. Interiorly partitioned vapor injector for delivery of source reagent vapor mixtures for chemical vapor deposition
KR100353210B1 (en) * 1997-02-06 2002-10-19 지멘스 악티엔게젤샤프트 Process for layer production on a surface

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