JPS5518077A - Device for growing film under gas - Google Patents

Device for growing film under gas

Info

Publication number
JPS5518077A
JPS5518077A JP9176478A JP9176478A JPS5518077A JP S5518077 A JPS5518077 A JP S5518077A JP 9176478 A JP9176478 A JP 9176478A JP 9176478 A JP9176478 A JP 9176478A JP S5518077 A JPS5518077 A JP S5518077A
Authority
JP
Japan
Prior art keywords
substrate
nozzle
reaction tube
susceptor
axis
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9176478A
Other languages
Japanese (ja)
Inventor
Yoshihide Endo
Yutaka Takahashi
Kazutomo Ozawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kokusai Electric Corp
Original Assignee
Kokusai Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kokusai Electric Corp filed Critical Kokusai Electric Corp
Priority to JP9176478A priority Critical patent/JPS5518077A/en
Publication of JPS5518077A publication Critical patent/JPS5518077A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45587—Mechanical means for changing the gas flow
    • C23C16/45591—Fixed means, e.g. wings, baffles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges

Abstract

PURPOSE:To raise the speed of growth of film and make the distribution of the thickness of the film uniform, by providing a material gas inlet nozzle on the axis of a vertical reaction tube, placing a processed substrate perpendicularly to the axis and providing a flat plate between the nozzle and the substrate in parallel therewith. CONSTITUTION:A susceptor 3 is installed in the reaction tube 1 which is made of quartz and surrounded by a coil 9 for making a reacting gas into plasma. A heater 4 is provided under the susceptor 3. The processed substrate 2 is horizontally set on the susceptor 3. The nozzle 7 having a material gas inlet port 6 is provided on the axis of the reaction tube 1 just above the substrate 2. An oxidizer or nitrogenizer gas inlet port is opened through the top of the reaction tube 1. The flat quartz plate 10 of slightly smaller diameter than the substrate 2 is provided between the nozzle 7 and the substrate. The distribution of gas concentration on the substrate 2 is thus made uniform. This results in rendering the thickness of the grown dielectric film 2 uniform.
JP9176478A 1978-07-27 1978-07-27 Device for growing film under gas Pending JPS5518077A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9176478A JPS5518077A (en) 1978-07-27 1978-07-27 Device for growing film under gas

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9176478A JPS5518077A (en) 1978-07-27 1978-07-27 Device for growing film under gas

Publications (1)

Publication Number Publication Date
JPS5518077A true JPS5518077A (en) 1980-02-07

Family

ID=14035613

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9176478A Pending JPS5518077A (en) 1978-07-27 1978-07-27 Device for growing film under gas

Country Status (1)

Country Link
JP (1) JPS5518077A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0653500A1 (en) * 1993-11-12 1995-05-17 International Business Machines Corporation CVD reactor for improved film thickness uniformity deposition
US5653806A (en) * 1995-03-10 1997-08-05 Advanced Technology Materials, Inc. Showerhead-type discharge assembly for delivery of source reagent vapor to a substrate, and CVD process utilizing same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0653500A1 (en) * 1993-11-12 1995-05-17 International Business Machines Corporation CVD reactor for improved film thickness uniformity deposition
US5653806A (en) * 1995-03-10 1997-08-05 Advanced Technology Materials, Inc. Showerhead-type discharge assembly for delivery of source reagent vapor to a substrate, and CVD process utilizing same

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