JPS56164523A - Vapor phase growth of semiconductor - Google Patents

Vapor phase growth of semiconductor

Info

Publication number
JPS56164523A
JPS56164523A JP6651880A JP6651880A JPS56164523A JP S56164523 A JPS56164523 A JP S56164523A JP 6651880 A JP6651880 A JP 6651880A JP 6651880 A JP6651880 A JP 6651880A JP S56164523 A JPS56164523 A JP S56164523A
Authority
JP
Japan
Prior art keywords
laser beam
substrate
region
beam source
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6651880A
Other languages
Japanese (ja)
Inventor
Yutaka Kobayashi
Takaya Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP6651880A priority Critical patent/JPS56164523A/en
Publication of JPS56164523A publication Critical patent/JPS56164523A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/047—Coating on selected surface areas, e.g. using masks using irradiation by energy or particles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/483—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using coherent light, UV to IR, e.g. lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To effectively grow a semiconductor layer in the necessary region on a substrate by a method wherein a laser beam source to heat a necessary part and a laser beam source to decompose a raw material gas are provided when a semiconductor layer is grown in a necessary region on a substrate by vapor phase growth. CONSTITUTION:An opening is provided in the bottom of a transparent quartz reaction tube having a gas-introducing port 19 at one end and a gas-discharging port 18 at the other end. A stage 14 whose ends are supported by springs 15 is disposed in said opening and horizontally moved by a stage-driving apparatus 16. Moreover, a substrate 1 of Si or sapphire is mounted on the central part of the stage 14, and around the substrate 1, a turbulence preventing plate 20 is disposed covering the springs 15. Thereafter, the laser beam from a laser beam source 9 is applied to a necessary region on the substrate 1 through lenses 11 and 12 is order to heat said region. Then, a mixed gas of SiH4 and H2 is sent in from the introducing port 19, and the laser beam from a laser beam source 10 is similarly applied to the heated region through lenses in order to grow a desired semiconductor layer therein.
JP6651880A 1980-05-21 1980-05-21 Vapor phase growth of semiconductor Pending JPS56164523A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6651880A JPS56164523A (en) 1980-05-21 1980-05-21 Vapor phase growth of semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6651880A JPS56164523A (en) 1980-05-21 1980-05-21 Vapor phase growth of semiconductor

Publications (1)

Publication Number Publication Date
JPS56164523A true JPS56164523A (en) 1981-12-17

Family

ID=13318154

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6651880A Pending JPS56164523A (en) 1980-05-21 1980-05-21 Vapor phase growth of semiconductor

Country Status (1)

Country Link
JP (1) JPS56164523A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5966124A (en) * 1982-10-08 1984-04-14 Hitachi Ltd Surface treating apparatus
JPS59135730A (en) * 1983-01-24 1984-08-04 Hitachi Ltd Device for surface modification
EP0153468A2 (en) * 1984-02-27 1985-09-04 Siemens Aktiengesellschaft Process and apparatus for light-induced photolytic deposition
JPS60216556A (en) * 1984-04-12 1985-10-30 Fuji Electric Corp Res & Dev Ltd Manufacture of semiconductor of semiconductor device
EP0477890A2 (en) * 1990-09-26 1992-04-01 Canon Kabushiki Kaisha Processing method and apparatus

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5966124A (en) * 1982-10-08 1984-04-14 Hitachi Ltd Surface treating apparatus
JPH0425698B2 (en) * 1982-10-08 1992-05-01 Hitachi Ltd
JPS59135730A (en) * 1983-01-24 1984-08-04 Hitachi Ltd Device for surface modification
EP0153468A2 (en) * 1984-02-27 1985-09-04 Siemens Aktiengesellschaft Process and apparatus for light-induced photolytic deposition
JPS60216556A (en) * 1984-04-12 1985-10-30 Fuji Electric Corp Res & Dev Ltd Manufacture of semiconductor of semiconductor device
EP0477890A2 (en) * 1990-09-26 1992-04-01 Canon Kabushiki Kaisha Processing method and apparatus
EP0477890A3 (en) * 1990-09-26 1996-12-18 Canon Kk Processing method and apparatus
EP0909986A1 (en) * 1990-09-26 1999-04-21 Canon Kabushiki Kaisha Photolithographic processing method and apparatus
US5962194A (en) * 1990-09-26 1999-10-05 Canon Kabushiki Kaisha Processing method and apparatus
US6025115A (en) * 1990-09-26 2000-02-15 Canon Kabushiki Kaisha Processing method for etching a substrate

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