JPS5710240A - Forming method of insulating film - Google Patents

Forming method of insulating film

Info

Publication number
JPS5710240A
JPS5710240A JP8443180A JP8443180A JPS5710240A JP S5710240 A JPS5710240 A JP S5710240A JP 8443180 A JP8443180 A JP 8443180A JP 8443180 A JP8443180 A JP 8443180A JP S5710240 A JPS5710240 A JP S5710240A
Authority
JP
Japan
Prior art keywords
insulating film
substrates
tube
specimens
infrared rays
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8443180A
Other languages
Japanese (ja)
Other versions
JPH0345534B2 (en
Inventor
Kenji Morisane
Yoshifumi Mori
Ario Mita
Kazuo Nishiyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP8443180A priority Critical patent/JPS5710240A/en
Publication of JPS5710240A publication Critical patent/JPS5710240A/en
Publication of JPH0345534B2 publication Critical patent/JPH0345534B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation by radiant heating of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)

Abstract

PURPOSE:To form the insulating film with excellent quality on a semiconductor of thermally unstable compound of GaAs and the like, by mixing gases containing elements which react with each other, flowing the mixture on the surfaces of specimens, heating the specimens by the irradiation of infrared rays, and growing reacted compound on the surface. CONSTITUTION:For example, GaAs substrates 2 are placed on an Mo susceptor 6 and enclosed in a quartz reacting tube 1. SiH4 and O2, which are mixed at an appropriate mixing ratio, are introduced into the reacting tube 1, with N2 as carrier gas. The infrared rays 5 are uniformly irradiated on the specimen substrates 2 from a plurality of lamps 3 having parabolic reflecting mirrors 4 provided at the outside part of the reactor tube 1, and the temperature of the substrates is quickly increased to 400-500 deg.C, e.g., at a rate of 100-200 deg.C/sec. Thus an SiO2 film is formed on the surfaces. After the formation of the insulating film, the temperature of the substrate is further increased as required, and, e.g., activation annealing of implanted ions and the like can be performed in the reacting tube 1. In this method, the insulating film with excellent quality suitable for MOS elements and the like can be formed.
JP8443180A 1980-06-20 1980-06-20 Forming method of insulating film Granted JPS5710240A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8443180A JPS5710240A (en) 1980-06-20 1980-06-20 Forming method of insulating film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8443180A JPS5710240A (en) 1980-06-20 1980-06-20 Forming method of insulating film

Publications (2)

Publication Number Publication Date
JPS5710240A true JPS5710240A (en) 1982-01-19
JPH0345534B2 JPH0345534B2 (en) 1991-07-11

Family

ID=13830389

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8443180A Granted JPS5710240A (en) 1980-06-20 1980-06-20 Forming method of insulating film

Country Status (1)

Country Link
JP (1) JPS5710240A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS586137A (en) * 1981-07-03 1983-01-13 Nec Corp Forming method for insulating film onto compound semiconductor
JPS60258915A (en) * 1984-03-07 1985-12-20 ゼネラル　シグナル　コ−ポレ−シヨン Method and device for depositing laser chemical phase
JPS6279627A (en) * 1985-09-30 1987-04-13 ジエ−ムス　エフ　キバンズ Reacting method for semiconductor material at high temperature
JPS62222631A (en) * 1986-03-24 1987-09-30 Nec Corp Vapor growth equipment
FR2605647A1 (en) * 1986-10-27 1988-04-29 Nissim Yves METHOD FOR THE HEAT FLASH VAPOR PHASE DEPOSITION OF AN INSULATING LAYER ON A III-V MATERIAL SUBSTRATE, APPLICATION TO THE MANUFACTURE OF A MIS STRUCTURE
JPH0645322A (en) * 1992-07-22 1994-02-18 Nec Corp Manufacture of silicon nitride film

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS508473A (en) * 1972-11-29 1975-01-28

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS508473A (en) * 1972-11-29 1975-01-28

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS586137A (en) * 1981-07-03 1983-01-13 Nec Corp Forming method for insulating film onto compound semiconductor
JPS60258915A (en) * 1984-03-07 1985-12-20 ゼネラル　シグナル　コ−ポレ−シヨン Method and device for depositing laser chemical phase
JPS6279627A (en) * 1985-09-30 1987-04-13 ジエ−ムス　エフ　キバンズ Reacting method for semiconductor material at high temperature
JPS62222631A (en) * 1986-03-24 1987-09-30 Nec Corp Vapor growth equipment
FR2605647A1 (en) * 1986-10-27 1988-04-29 Nissim Yves METHOD FOR THE HEAT FLASH VAPOR PHASE DEPOSITION OF AN INSULATING LAYER ON A III-V MATERIAL SUBSTRATE, APPLICATION TO THE MANUFACTURE OF A MIS STRUCTURE
JPH0645322A (en) * 1992-07-22 1994-02-18 Nec Corp Manufacture of silicon nitride film

Also Published As

Publication number Publication date
JPH0345534B2 (en) 1991-07-11

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