JPS56114332A - Forming method for semiconductor insulating film - Google Patents

Forming method for semiconductor insulating film

Info

Publication number
JPS56114332A
JPS56114332A JP1661380A JP1661380A JPS56114332A JP S56114332 A JPS56114332 A JP S56114332A JP 1661380 A JP1661380 A JP 1661380A JP 1661380 A JP1661380 A JP 1661380A JP S56114332 A JPS56114332 A JP S56114332A
Authority
JP
Japan
Prior art keywords
semiconductor
insulating film
sih4
si3n4
diluted
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1661380A
Other languages
Japanese (ja)
Inventor
Takashi Fukui
Yoshiharu Horikoshi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP1661380A priority Critical patent/JPS56114332A/en
Publication of JPS56114332A publication Critical patent/JPS56114332A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To prevent the generation of an interface level by a method wherein a gas of an organic metallic compound and a gas of a hydride are introduced, a fixed compound semiconductor is grown in a gaseous phase at 500-700 deg.C, the gases are changed over to SiH4 and NH3, and the semiconductor is coated with Si3N4. CONSTITUTION:H2 2 is purified 3, and passed through a reservoir 5, triethyl indium is contained, the flow rate is controlled 4, 7, 8 together with PH3 6 diluted at 5% with H2, and the mixture is supplied to a reaction tube 11. An InP substrate 1 on a carbon base 9 is heated 12 by high frequency at 500-700 deg.C measuring 10 a temperature of the base 9 to form InP, and Zn(C2H5)2 is used as a P type and H2S as an N type as impurities. The gases are instantaneously changed over, the flow rate is adjusted 17, 19, 1% NH3 diluted with H2 and 1% SiH4 are flowed, and Si3N4 is ?laminated. According to such constitution, a stable device having excellent characteristics is obtained when a semiconductor growing surface is used as a gate insulating film because the surface is not polluted and an interface is clean.
JP1661380A 1980-02-15 1980-02-15 Forming method for semiconductor insulating film Pending JPS56114332A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1661380A JPS56114332A (en) 1980-02-15 1980-02-15 Forming method for semiconductor insulating film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1661380A JPS56114332A (en) 1980-02-15 1980-02-15 Forming method for semiconductor insulating film

Publications (1)

Publication Number Publication Date
JPS56114332A true JPS56114332A (en) 1981-09-08

Family

ID=11921166

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1661380A Pending JPS56114332A (en) 1980-02-15 1980-02-15 Forming method for semiconductor insulating film

Country Status (1)

Country Link
JP (1) JPS56114332A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0120307A2 (en) * 1983-02-25 1984-10-03 Toyota Jidosha Kabushiki Kaisha Apparatus and method for plasma treatment of resin material

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0120307A2 (en) * 1983-02-25 1984-10-03 Toyota Jidosha Kabushiki Kaisha Apparatus and method for plasma treatment of resin material
EP0120307A3 (en) * 1983-02-25 1989-05-03 Toyota Jidosha Kabushiki Kaisha Apparatus and method for plasma treatment of resin material

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