JPS5529155A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5529155A JPS5529155A JP10251778A JP10251778A JPS5529155A JP S5529155 A JPS5529155 A JP S5529155A JP 10251778 A JP10251778 A JP 10251778A JP 10251778 A JP10251778 A JP 10251778A JP S5529155 A JPS5529155 A JP S5529155A
- Authority
- JP
- Japan
- Prior art keywords
- band
- type layer
- grow
- joints
- impurities
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 239000013078 crystal Substances 0.000 abstract 3
- 239000012535 impurity Substances 0.000 abstract 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 abstract 1
- 239000004952 Polyamide Substances 0.000 abstract 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract 1
- XTXRWKRVRITETP-UHFFFAOYSA-N Vinyl acetate Chemical compound CC(=O)OC=C XTXRWKRVRITETP-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 abstract 1
- 229910052785 arsenic Inorganic materials 0.000 abstract 1
- 229910000070 arsenic hydride Inorganic materials 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- 239000012159 carrier gas Substances 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 abstract 1
- 230000007547 defect Effects 0.000 abstract 1
- 229910052733 gallium Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 229920002647 polyamide Polymers 0.000 abstract 1
- 239000010453 quartz Substances 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03921—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Led Devices (AREA)
Abstract
PURPOSE:To eliminate unevenness of crystal pattern and occurrence of crystal defect, when forming same kind or different kind of joints on a non-single crystal semiconductor, by changing continuously one or both of a conduction band and a valence electron band of every band on the joints. CONSTITUTION:On an electroconductive base plate such as metal and semiconductor, etc., or an insulated base plate such as polyamide and vinyl acetate, etc., a joint is formed by using a reactor made of quartz, etc. Thus, the reactor is charged with these base plates, kept at reduced pressure of 0.1-10 Torr, supplied with gaseous silicic compound such as SiH4, carrier gas such as H2 and PH3 and AsH3 containing P and As, so that an n type layer is allowed to grow. Further, a p type layer is allowed to grow on the n type layer by turning impurities into a chloride containing Al, Ga and B. At the same time, all the impurities are controlled to 10<14>-5X 10<22>/cm<3> and the temperature is selected within a range of 350 deg.C-900 deg.C so that variation of a coduction band and a valence electron band can be continuously maintained.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10251778A JPS5529155A (en) | 1978-08-23 | 1978-08-23 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10251778A JPS5529155A (en) | 1978-08-23 | 1978-08-23 | Semiconductor device |
Related Child Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1989981A Division JPS56150881A (en) | 1981-02-13 | 1981-02-13 | Semicondutor device |
JP57070144A Division JPS57184257A (en) | 1982-04-26 | 1982-04-26 | Photoelectric converter |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5529155A true JPS5529155A (en) | 1980-03-01 |
Family
ID=14329539
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10251778A Pending JPS5529155A (en) | 1978-08-23 | 1978-08-23 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5529155A (en) |
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57126254U (en) * | 1981-02-02 | 1982-08-06 | ||
JPS57128806U (en) * | 1981-02-07 | 1982-08-11 | ||
JPS57129368U (en) * | 1981-02-07 | 1982-08-12 | ||
JPS57134695U (en) * | 1981-02-13 | 1982-08-21 | ||
US4527179A (en) * | 1981-02-09 | 1985-07-02 | Semiconductor Energy Laboratory Co., Ltd. | Non-single-crystal light emitting semiconductor device |
JPS6164175A (en) * | 1984-09-06 | 1986-04-02 | Ulvac Corp | Amorphous semiconductor light-emitting diode and plane display device utilizing said diode |
JPS62144365A (en) * | 1985-12-18 | 1987-06-27 | Nec Corp | Laminated structure |
JPS63185077A (en) * | 1987-01-27 | 1988-07-30 | Matsushita Electric Ind Co Ltd | Blue light emitting diode |
JPH07169985A (en) * | 1994-10-27 | 1995-07-04 | Semiconductor Energy Lab Co Ltd | Semiconductor device |
JPH08274361A (en) * | 1996-02-05 | 1996-10-18 | Semiconductor Energy Lab Co Ltd | Semiconductor device |
US6028264A (en) * | 1982-08-24 | 2000-02-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor having low concentration of carbon |
USRE37441E1 (en) | 1982-08-24 | 2001-11-13 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device |
US6664566B1 (en) | 1982-08-24 | 2003-12-16 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device and method of making the same |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5093585A (en) * | 1973-12-19 | 1975-07-25 |
-
1978
- 1978-08-23 JP JP10251778A patent/JPS5529155A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5093585A (en) * | 1973-12-19 | 1975-07-25 |
Cited By (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57126254U (en) * | 1981-02-02 | 1982-08-06 | ||
JPS588253Y2 (en) * | 1981-02-02 | 1983-02-15 | 三共電子工業株式会社 | medical skin electrode |
JPS57128806U (en) * | 1981-02-07 | 1982-08-11 | ||
JPS57129368U (en) * | 1981-02-07 | 1982-08-12 | ||
US4984034A (en) * | 1981-02-09 | 1991-01-08 | Semiconductor Energy Laboratory Co., Ltd. | Non-single-crystalline light emitting semiconductor device matrix with insulation |
US4527179A (en) * | 1981-02-09 | 1985-07-02 | Semiconductor Energy Laboratory Co., Ltd. | Non-single-crystal light emitting semiconductor device |
JPS57134695U (en) * | 1981-02-13 | 1982-08-21 | ||
US6028264A (en) * | 1982-08-24 | 2000-02-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor having low concentration of carbon |
US6664566B1 (en) | 1982-08-24 | 2003-12-16 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device and method of making the same |
USRE37441E1 (en) | 1982-08-24 | 2001-11-13 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device |
JPS6164175A (en) * | 1984-09-06 | 1986-04-02 | Ulvac Corp | Amorphous semiconductor light-emitting diode and plane display device utilizing said diode |
JPS62144365A (en) * | 1985-12-18 | 1987-06-27 | Nec Corp | Laminated structure |
JPH0567056B2 (en) * | 1985-12-18 | 1993-09-24 | Nippon Electric Co | |
JPS63185077A (en) * | 1987-01-27 | 1988-07-30 | Matsushita Electric Ind Co Ltd | Blue light emitting diode |
JPH07169985A (en) * | 1994-10-27 | 1995-07-04 | Semiconductor Energy Lab Co Ltd | Semiconductor device |
JPH08274361A (en) * | 1996-02-05 | 1996-10-18 | Semiconductor Energy Lab Co Ltd | Semiconductor device |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5529154A (en) | Semiconductor device | |
JPS52140267A (en) | Vapor epitaxial crystal growing device | |
JPS5529155A (en) | Semiconductor device | |
GB1490665A (en) | Method of growing epitaxial layers of silicon | |
GB1151484A (en) | Epitaxial Growth of Germanium | |
JPS5680128A (en) | Manufacture of thin film | |
JPS5434676A (en) | Vapor growth method and apparatus for high-purity semiconductor layer | |
JPS5234668A (en) | Gaseous phase growing process of semiconductor | |
GB1386900A (en) | Semiconductor layers | |
JPS5553415A (en) | Selective epitaxial growing | |
JPS535967A (en) | Method and device for forming thin film by vapor-phase reaction | |
JPS55149195A (en) | Manufacture of silicon carbide substrate | |
JPS53105371A (en) | Crystal growing method for potassium arsenide | |
JPS6410617A (en) | Formation of polycrystalline silicon film | |
JPS54102295A (en) | Epitaxial crowth method | |
JPS5518024A (en) | Vapor phase reactor | |
JPS6459808A (en) | Growth of semiconductor | |
JPS56124228A (en) | Method for low-tension epitaxial growth | |
JPS56114332A (en) | Forming method for semiconductor insulating film | |
JPS5267260A (en) | Manufacture of iii-v group compounds semiconductor epitaxial laminatio n crystal | |
JPS5375857A (en) | Vapor phase growth apparatus | |
JPS5469062A (en) | Vapor growth method for magnespinel | |
JPS61242998A (en) | Production of semiconductor single crystal of silicon carbide | |
JPS6446917A (en) | Chemical vapor growth device | |
JPS5267573A (en) | Manufacturing device for semiconductor |