JPH07169985A - Semiconductor device - Google Patents

Abstract

PURPOSE:To obtain specifically very low concentration of an average concentra tion of oxygen or carbon that causes promotion of insulation or generation of a rebonding center by employing as a chief component silicon, and hydrogen or fluorine required for neutralization of the rebonding center for a silicon semiconductor. CONSTITUTION:The invention utilizes a fact that reactive gas for a semiconductor such as silane, polysilane, and silicon fluoride as silicide gas and germane as a germanium compound gas has and effective molecular diameter of 4.8Angstrom or more. More specifically, a molecular shieve or zeolite having an effective hole diameter of 2.9 to 4.65Angstrom is used to absorb and remove oxydizing gases being impurities having an effective molecular diameter of 4.5Angstrom or less such as water(H2O), carbon dioxide(CO2), carbide gas such as methane(CH4), ethene(C2 H6), propane(C3H8), CH3OH, C6H6 ad so on. Hereby, there is reduced to 5X10<18>cm<-3> or less oxygen and carbon concentrations in an intrinsic or substantially intrinsic I-type semiconductor layer of a semiconductor device having a PIN structure.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention uses an ultra-high-purity semiconductor manufacturing gas containing oxygen or carbon at an extremely low concentration,
The present invention relates to a photoelectric conversion device having at least one junction and a method for manufacturing the photoelectric conversion device.

[0002]

2. Description of the Related Art Conventionally, oxygen has locally constituted Si--O--Si in a semiconductor, for example, a silicon semiconductor, and has only an insulating property. However, when a few to a dozen or so of oxygen are aggregated in silicon to form a cluster, it forms a recombination center of electrons and holes, and acts as a recombination center or killer of minority carriers generated by light irradiation. It has been found that the occurrence of such a phenomenon is extremely remarkable even in a non-single crystal semiconductor obtained by a plasma vapor phase method to which hydrogen or a halogen element is added.

Further, the dangling bond of oxygen also acts as an N-type donor center, and a non-single crystal semiconductor has a lattice sensitivity more than that of an amorphous semi-amorphous (semi-crystalline) structure. ), It turns out to be N-type. For this reason, it is extremely important to consider the industrial application by essentially removing the oxygen that becomes the donor-center and producing an intrinsically structurally sensitive semiconductor (the Fermi level is approximately in the center of the bandwidth). Met.

Further, regarding carbon, ethane and the like CmHn (m
In> 2), it was mixed into the semiconductor as it was, and many recombination centers were generated, resulting in a decrease in the lifetime of the carrier, especially the hole.

[0005]

SUMMARY OF THE INVENTION According to the present invention, a substrate or a first electrode on the substrate and a non-single-crystal semiconductor layer having at least one PIN junction on the electrode are a P-type semiconductor layer and an I-type semiconductor. In a photoelectric conversion device provided by stacking a layer and an N-type semiconductor layer, an intrinsic or substantially intrinsic (P or N-type impurity is 1 × 10 6) which is an active semiconductor layer that particularly generates a photoelectromotive force by light irradiation. ¹⁴ to a concentration of ~5 × 10 ¹⁷ cm ^-3 was artificially contaminated or to entrained) semiconductor background level, the average concentration of oxygen or carbon, especially results in the generation of promoting or recombination centers insulating The objective is to achieve an extremely low concentration of 5 × 10 ¹⁸ cm ^-3 or less, preferably 1 × 10 ¹⁸ cm ^-3 or less.

[0006]

The present invention removes such impurities, and the silicon semiconductor contains hydrogen or fluorine, which is necessary for neutralizing the recombination center with silicon, as a main component, and further has a III value for shifting the Fermi level. Alternatively, it is characterized in that a V-valent impurity is added (10 ^{14 to} 3 × 10 ¹⁷ cm ⁻³ ). Conventional silane has an effective molecular diameter of less than 5Å (4.8 to 5Å)
Has, and germane has about 6Å. (Polysilane has a larger effective molecular diameter) However, for example, in the case of silane (monosilane) having the smallest effective molecular diameter, when the impurities contained in the reactive gas are examined,
It is as shown in Table 1 below.

[0007]

[Table 1]

Examining these, particularly when this epitaxial growth is performed, oxides and nitrides are reduced to about one-third of that in Table 1 due to the segregation effect during the gas-solid reaction. Therefore, a substantially intrinsic semiconductor having a specific resistance of 100 Ωcm or more can be obtained. However, in the plasma vapor phase method using glow discharge performed at 100 to 400 ° C., the effect of such physical refining as segregation of impurities cannot be expected. For this reason, the impurities shown in Table 1 are mixed in the semiconductor as they are, and particularly with respect to oxygen and water,
All react with silane to form the reaction product silicon oxide.
The activation (ionization) of silane itself is 1 to 5% by the plasma reaction, and therefore, it is substantially 20 to 30 times more concentrated than that in the gas state, and the silane content in the semiconductor film is 2 to 30%.
It was found that the concentration became as high as 4 × 10 ²⁰ cm ^{-3 and} that the particles were mixed. Therefore, it has been experimentally found that when a reactive gas is used for the plasma vapor phase method, it is extremely important to purify it in the reactor.

Thus, in the present invention, in order to guarantee a conversion efficiency of 10% or more in AM1, oxygen is set to 5 × 10 ¹⁸ cm ^-3 or less in the I layer, and even in carbon mixed in clusters. 4 × 10 ¹⁸ cm ^-3 or less, preferably 1 × 10 ¹⁸ cm
It is very important that it is ^-3 or less. The present invention aims at high purification of such a semiconductor.

For this purpose, the present invention uses reactive gases for semiconductors such as silane, polysilane and silicon fluoride which are silicide gas, and germane which is germanium gas, etc., and has an effective molecular diameter of 4.8Å. The above is utilized. That is, by using a molecular type or zeolite with an effective hole diameter of 2.9 to 4.65Å, 4.5
Å Oxide gas which is an impurity having an effective molecular diameter (hereinafter referred to as molecular diameter) of, for example, water (H ₂ O) carbon dioxide (C
O ₂ ), oxygen (O ₂ ), or a carbide gas such as methane (CH ₄ ), ethane (C ₂ H ₆ ), propane (C ₃ H ₈ ), CH ₃ OH,
The purpose is to adsorb and remove C ₆ H ₆ etc.

Further, in order to promote this adsorption force, the adsorbent which chemically adsorbs is adsorbed at room temperature to -100 ° C, preferably -20 to -7.
The purpose is to cool it to 0 ° C and further increase its adsorption power 50 times or more. Thus, conventional non-single crystal semiconductors with PIN junctions, especially amorphous semiconductors, are AM1 (100mW /
It was possible to increase the intrinsic conversion efficiency to 11 to 14.5% from the conversion efficiency of 6 to 8% under the condition of cm ² ).

Particularly, in the I layer which is the active semiconductor layer, the oxygen concentration is 5 × 10 5 from the conventional 2-4 × 10 ²⁰ cm ^-3.
18 cm ⁻³ or less, preferably 1 × 10 ¹⁸ to 1 × 10 ¹⁴ cm ⁻³ , and further having a large number of C—C bonds in the semiconductor, that is,
The density of recombination centers in a semiconductor, for example, a silicon semiconductor, is reduced to 1 × by reducing the carbon mixed in the form of clusters to 4 × 10 ¹⁸ cm ⁻³ or less, preferably 1 × 10 ¹⁸ to 1 × 10 ¹⁴ cm ^−3.
10 ¹⁸ cm ^-3 to 1 × 10 ¹⁷ cm ^-3 or less, preferably 5 × 10 ¹⁴ to 1
It is characterized by succeeding in lowering to × 10 ¹⁶ cm ^-3 and eliminating the so-called Stebra-Lonski effect, which deteriorates the photoconductivity by light irradiation.

The following is shown according to the drawings. FIG. 1 shows an outline of a manufacturing apparatus used for manufacturing the semiconductor device of the present invention.
In the drawing, an external heating furnace (21), a substrate (22), a pair of electrodes (3), for a reaction furnace (1) (diameter 35 mmφ),
(3 '), high frequency oscillator (2) (eg 13.56MHz or 100KH
z), 1GH for further activation and decomposition of reactive gas
Microwaves with a frequency of z or higher, for example 2.45 GHz oscillator (1
7), has an attenuator (18). Microwaves were emitted from the emission part protected by the ceramics (19) to the reaction furnace (1) held at 0.001 to 10 torr. The entire reaction furnace is shielded (20) so that there is no radio interference, and when forming a semiconductor film on the substrate (22) with a reactive gas, the electric field of electrical energy is laminar parallel to the surface to be formed. Are arranged to have.

The reactive gas is a carrier gas such as oxygen, and impurities of water are 1 ppb or less, preferably hydrogen reduced to 0.1 ppb is introduced from (7). Further, when forming a silicon film, silane, which is a silicide gas, was introduced from (4). Also, due to hydrogen, which is an impurity for P type, 500 to 5000
Foshin diluted in PPM was introduced from (6).

These reactive gases are collected in the gas purifiers (11), (1
A predetermined flow rate was introduced into the reactor through 4), (12), (15), (13), and (16). These gas purifiers are modified by using 3Å, 4Å, or 4.5Å with effective hole diameters of 2.7 to 4.65Å, for example, 4Å effective hole diameters of 3.5 to 4.3Å on the reaction gas inlet side. did. This molecular
Ships or zeolites are Na (AlO ₂ ) (SiO ₂ ) 27-30
4Å indicates H ₂ O, and 4.5Å indicates (K ₄ Zn ₄ ) (AlO ₂ ) (SiO
₂ ) The one represented by the molecular formula of 27-30 H ₂ O was used. After this, a gas line for deoxidation (product name GC-RX) was connected. Both of these were manufactured by Nikka Seiko.

In order to further improve the chemical adsorption of these purifiers, an electron thermostatic layer is maintained at -70 ° C to room temperature, for example, -30 ° C.
It was cooled by (8), (9) and (10). For foshin diluted with hydrogen, 3Å or 4Å was used because its effective molecular diameter is about 4.3Å. Also, for silane or disilane, any of 3Å, 4Å, and 4.5Å was applicable.

Especially for silanes, N
It was particularly effective to use 4.5 Å, because in addition to oxygen, which is an impurity that tends to be converted, foshin reduces its concentration to 0.01 ppb or less (5 × 10 ¹⁴ cm ^-3 or less). The exhaust system was evacuated (26) through a needle valve (25), a stop valve (24) and a vacuum pump (23). The pressure inside the reactor is 0.001 to 10 torr, typically due to the needle valve (25).
It was controlled to 0.05 to 0.1 torr.

FIG. 2 shows the characteristics obtained from the result of FIG. That is, the substrate temperature is 250 ° C and the pressure in the reaction furnace is 0.1 torr.
Then, a non-single crystal semiconductor layer is formed on a substrate such as glass.
These are the light irradiation (AM1) conductivity and the dark conductivity when formed to a thickness of μm. In the drawing, when such purification is not performed on silane, the impurities in the cylinder as described above enter the semiconductor layer as they are, and oxygen or carbon has the effect of making silicon amorphous.

Therefore, a photoconductivity curve (29) and a dark conductivity curve (30) were obtained. That is, in the drawing, at a high frequency output of 20 to 30 W, the photoconductivity has an order of 10 ⁻³ (Ωcm) ⁻¹ , but at the same time, the semiconductor is partially semi-amorphous with some order. For this reason, oxygen, which is an impurity in this semiconductor, becomes a donor center and becomes N-type, resulting in dark conductivity (3
0) is also in the order of 10 ^-4 (Ωcm) ^-1 . As a result, when used as an intrinsic semiconductor, boron, which is the opposite impurity, must be added to a concentration of 1 to 3 × 10 ¹⁷ cm ⁻³ , or a low output of 1 to 5 W must be obtained. However, in both cases, the photoconductivity is reduced to the order of 10 ^-6 to 10 ^-5 (Ωcm) ^-1 , as is clear from the curve (29).

Instead of such conventional methods, the present invention purifies impurities in silane, particularly oxygen, water or hydrocarbons (see FIG. 1).
(11) (14)) and the silane is sufficiently removed, and when the silane is filled in the cylinder, it is sufficiently purified and filled. Thus, by purifying and removing oxygen containing water, the light irradiation conductivity (27) and the dark conductivity (28) in FIG. 2 could be obtained.

As is clear from this drawing, the photoconductivity is as large as 10 ^-4 (Ωcm) ^-1 or more in the low plasma energy region where the plasma discharge output is ^{1 to} 10 W, and the dark conductivity is 10 ^-11. It is as small as ~ 10 ^-10 (Ωcm) ^-1 . That is, the activation energy as an intrinsic semiconductor was sufficiently large, and the Fermi level could be made to have approximately Eg / 2 ^+0.1 _-0.2 eV. Further examination of this property revealed that weak crystallization was observed in a part of the coating film obtained at 5 to 10 W in the X-ray diffraction image. It was a crystalline semiconductor.

That is, an intrinsic semiconductor is formed by the plasma vapor phase method.
If it is attempted to obtain it at 100 to 300 ° C., for example 250 ° C., then the impurities in this silane are likely to enter a concentration as high as 30 to 100 times that of simple CVD or epitaxial growth. Therefore, it is extremely important to use ultra-high-purity silane in which impurities in the starting material are mixed as little as possible.
Thus, even at a low output of ² to 10 W, the dark conductivity is small and the photoconductivity is close to 10 ^-2 (Ωcm) ^-1 of a single crystal.
Values of ^-4 to 10 ^-3 (Ωcm) ^-1 were obtained.

What is obtained at such a low high frequency output is to clarify the boundary region as a plane when the PIN junction is gradually laminated with the P layer, I layer and N layer as in the present invention, that is, on the P layer. When the I layer is laminated on the substrate, it is possible to prevent the underlying P layer from being hit by the effect of spattering (damaging) the P layer of the discharge, and it is possible to prevent the mixed layer from being formed at the interface PI junction interface, which is extremely important. .

Further, in FIG. 2, when a microwave of 2.45 GHz is applied, in order to increase the ionization rate of the reactive gas,
The characteristics were similar, but the growth rate of the coating was about 3-5.
We were able to double it and make it bigger. For example, 30 silane
Introduced at cc / min, 0.1 torr, 1 with high frequency plasma only
Although it was as low as ~ 3Å / sec, in this case, it was possible to grow at a high speed of 10-15Å / sec.

FIG. 3 shows an experiment for confirming the effectiveness of the gas purifier regarding the purification of silane of the present invention. In the drawing, the horizontal axis represents the concentration of oxygen or carbon in the film, which was examined by FTIR (infrared absorption spectrum of Fourier transform method), and the vertical axis represents the electrical conductivity during light irradiation. . Further, regarding the impurity concentration of 1 × 10 ¹⁹ cm ⁻³ or less, SIMS (3F type manufactured by Kameka Co., Ltd.) was used for measurement and examination. The absolute amount is corrected by adding a specific implantation amount (for example, 1 × 10 ¹⁸ cm ⁻³ ) to amorphous silicon by the ion implantation method,
This was measured by SIMS and the ionic strength was used.

When the deoxygenation purifier (14) and the zeolite (11) are used together in the silane system, the curves (45) and (46) are obtained. The curve (45) is the characteristic when the oxygen concentration when deoxygenating when the carbon concentration is 3 × 10 ²⁰ cm ^-3 is used as the parameter, and the curve (46) is the oxygen concentration 1 × 10 ²⁰ cm ^-3
(60) 3 × 10 ²⁰ cm ^-3 (61) When mixed, the conductivity is 10
^{There is} only ^-5 to 10 ^-6 (Ωcm) ^-1 , and it can be seen that the mixing of oxygen is a factor that causes a decrease in conductivity.

Further, regarding the drawings, the curves (41) and (42) contain an oxygen concentration of 3 × 10 ¹⁷ cm ^-3 and a carbon concentration of 4 × 10 ¹⁸ cm ^-3 , respectively. Concentrations are shown as parameters. That is, especially oxygen is 5 × 10 ¹⁸ cm ^-3
By setting (43) below, the photoconductivity is 10 ^-3 (Ω
cm) ^-1 and dark conductivity of 10 ^-10 (Ωcm) ^-1 can be expected. When the substrate temperature was lowered from 250 ° C to 200 ° C and 150 ° C, the conductivity decreased by about 1/3.

In order to obtain these oxygen and carbon concentrations, it is extremely important that the oxygen (water) in the silane be 0.03 PPM or less, and the purification should be carried out not at room temperature but at 0 to -30 ° C.
Then, the oxygen impurity concentration can be reduced to 0.01 PPM and 0.003 PPM. In addition, the residual water in the reactor was reduced to 0.1PPM or less (10
The ultimate vacuum is ^-8 torr or less) to prevent the oil from diffusing back. As a result, CmHn could be lowered to 0.1PPM or less. Furthermore, when liquefied / vaporized physically purified silane is used as the starting silane (also referred to as original silane), it cannot be measured at all by a mass spectrometer. Also, the concentration of oxygen and carbon in the formed semiconductor layer is 5 ×, respectively.
It was below 10 ¹⁶ and 4 × 10 ¹⁷ cm ^-3, which exceeded the detection limit of SIMS. Of course, in order to obtain high purity as described above, the total leak amount including the reaction furnace in the reaction system shown in FIG. 1 is 1 × 10 ⁻¹⁰ cc / sec or less, preferably 1 × 10 ⁻ It is important to note that it is important to set the speed to ¹² cc / sec or less, and that it is important to devise a joint or the like.

FIG. 4 is formed by using the manufacturing apparatus of FIG. 1. Drawing (A) shows a transparent conductive film (3) on a glass substrate (32).
3) In addition, P-type silicon carbide (Si _x C _1-x 0 <x <1) (for example, x = 0.8) or P-type silicon semiconductor (34) is added to 100 Å
Formed to a thickness of. Further, after this, the reaction system was sufficiently evacuated (10 ^-8 torr or less) by a cryopump (45), and then an intrinsic semiconductor layer was formed to a thickness of 0.5 μm (31) with purified silane. Then, vacuuming is performed again, and the N-type semiconductor layer (35) is mixed with silane and methane to obtain Si _x C.
_1-x x = 0.9, and foshin was mixed in at a concentration of 1% to form a thickness of 200 Å. Thereafter, a reflective electrode such as a known silver or aluminum (36) is vacuum-deposited.

The high frequency output was 5 W and the substrate temperature was 200 ° C.
Then, conversion efficiency of 10.3% could be obtained. In order to further improve the characteristics of this glass substrate, the PI of the structure in FIG.
An N-junction type photoelectric conversion device was produced. In the drawing, a P type semiconductor layer (34) and an I type semiconductor layer are provided on a stainless steel substrate (32).
(33) A polycrystalline semiconductor layer (35) having an N-type fiber structure was formed in the thickness of 200Å, 0.5 μm and 150Å by the apparatus shown in FIG. Further, ITO (indium oxide [tin oxide 0 to 10%]) was vacuum-deposited on the transparent conductive film (43) to provide an aluminum auxiliary electrode (36).

FIG. 5 shows the conversion efficiency characteristics of the photoelectric conversion device having the oxygen concentration mixed in the intrinsic semiconductor layer as a parameter in the structure shown in FIG. 4B. Oxygen concentration is 5 ×
Below 10 ¹⁸ cm ^-3, especially below 1 × 10 ¹⁸ cm ^-3 , the conversion efficiency (49) could exceed 12% in the area of 1 cm ² for AM1. The fill factor (48) also exceeds 0.7,
In particular, the short-circuit current (47) can be up to 20 mA / cm ² . The open circuit voltage was 0.86 to 0.93V. After all, the oxygen concentration became smaller, and by making silicon more like silicon, a great improvement in characteristics was seen.
In the embodiment of FIG. 4B, regarding the N-type semiconductor layer to be a polycrystalline semiconductor having a fiber structure and to manufacture it at a low temperature of 200 to 250 ° C., a patent application 57 filed by the present inventor.
─ 087801 (57.5.24).

FIG. 6 and FIG. 7 are evaluations of extremely important reliability characteristics when the reliability of the photoelectric conversion device is taken into consideration. The drawing shows a curve (50) in which the number of photons added to the sample is 1 × 10 ¹⁵ / cm ² when measuring the constant energy spectral characteristics. The vertical axis represents the normalized quantum efficiency (efficiency) with the maximum point set to "1". This device is irradiated with AM1 (100 mW / cm ² ) light for 2 hours. After that, the light-sensitivity changes as shown by the curve (51), and the property is extremely deteriorated for light of 350 to 500 nm.
It turned out to be low. When this is annealed at 150 ° C for 2 hours, it becomes a curve (52), and the characteristics are
The short wavelength light of 350 to 500 nm restores the curve (50), and the long wavelength light of 600 to 800 nm does not. For this reason, there has been a demand for a highly reliable photoelectric conversion device which is not deteriorated by the treatment of light irradiation and thermal annealing, that is, which has no Stepra-Ronski effect.

FIG. 7 shows that the average oxygen concentration in the I-type semiconductor is 5
The characteristics of the photoelectric conversion device in the case of × 10 ¹⁸ cm ^-3 are shown. When the light irradiation (AM1) was carried out for 2 hours corresponding to the curve (50) shown in FIG. 6, a curve (51) with improved characteristics was obtained. Further heat anneal only slightly changed the curve (52). From this, it was found that the concentration of oxygen as an impurity in the I-type semiconductor layer is extremely important for stabilizing the characteristics (preventing deterioration). In addition, it was found that the oxygen concentration was extremely low at least at 5 × 10 ¹⁸ cm ^-3 . Further, this light irradiation effect (Stebler-Ronski effect) was able to obtain higher reliability by further reducing the oxygen concentration. In addition, as is clear from FIG. 5, the conversion efficiency (curve (49)) is improved. This is because the recombination centers due to the dangling bonds of oxygen in the I-type semiconductor layer decrease, the diffusion length of the holes increases, and the width of the depletion layer is only 0.1 μm when the oxygen concentration is 1 × 10 ²⁰ cm ^-3. If it does not exist, it becomes 0.4 μm or more at 5 × 10 ¹⁸ cm ⁻³ or less, and most preferably when it is divided into the entire thickness of the I-type semiconductor, it is possible to manufacture a photoelectric conversion device which does not show any deterioration.

As described above, the present invention has found that the conversion efficiency and the reliability are improved as a photoelectric conversion device as the oxygen and carbon concentrations, especially oxygen as impurities are reduced, and the practical use thereof is made. 5 × 10 ¹⁸ oxygen impurities
It has been found that it is not more than cm ^−3, preferably not more than 1 × 10 ¹⁸ cm ⁻³ .

In the above description, the photoelectric conversion device having one PIN junction is shown.
.. It is important to apply the PIN junction and at least two junctions as an application of the present invention, and these may be integrated on a substrate having an insulating surface. In the above description, silane, particularly monosilane, has been shown as the silicide gas. However, the present invention is also effective for polysilanes such as disilane, and physical purification of a silicide gas can be applied due to its large molecular particle size. Further, silicon fluoride such as SiF is also effective because its molecular diameter is as large as 5Å. For germanium, use germane (GeH ₄ ),
It is also possible to use only Si _x Ge _1-x (0 <x <1) or Ge as the non-single crystal semiconductor for the I-type semiconductor layer included in the PIN junction.

In the above description, the photoelectric conversion device having one PIN junction has been mainly described. However, the semiconductor layer has at least one NI or PI junction, ie N (source or drain) I (channel forming region) N (drain or source), an insulating gate field effect semiconductor device having a PIP junction, or The present invention is extremely effective for a transistor having a NIPIN, PINIP junction.

[Brief description of drawings]

FIG. 1 shows an outline of a plasma vapor phase reaction furnace for producing a semiconductor device of the present invention.

FIG. 2 shows characteristics obtained by the present invention and electrical characteristics of a conventional intrinsic semiconductor.

FIG. 3 shows changes in electrical properties obtained by the reactive gas purification method of the present invention.

FIG. 4 shows a photoelectric conversion device of the present invention.

FIG. 5 shows various characteristics of the photoelectric conversion device obtained in FIG.

FIG. 6 shows constant energy spectral characteristics of a conventional photoelectric conversion device.

FIG. 7 shows constant energy spectral characteristics of the photoelectric conversion device of the present invention.

[Explanation of symbols]

 1 Reaction Furnace 21 External Heating Furnace 22 Substrate 3, 3'electrode 2 High Frequency Oscillator 17 Oscillator 18 Actuator 19 Ceramics 20 Shield 11, 14, 12 Gas Purifier 15, 13, 16 Gas Purifier 8, 9, 10 Electron Constant Temperature Layer 25 Needle valve 24 Stop valve 23 Vacuum pump

─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. ⁶ Identification code Office reference number FI technical display location 9056-4M H01L 29/78 311 H

Claims (2)

[Claims] 1. A semiconductor device comprising a substrate or a first electrode on the substrate, a non-single-crystal semiconductor having at least one PIN junction on the electrode, and a second electrode on the semiconductor, The intrinsic or substantially intrinsic semiconductor layer constituting the PIN junction has an impurity concentration of at least 5 × 10 ¹⁸ cm ⁻³ or less or 4 × 10 6 carbon mixed with clusters.
A semiconductor device containing an impurity concentration of ¹⁸ cm ^-3 or less. 2. The intrinsic or substantially intrinsic semiconductor according to claim 1, is mainly silicon or germanium to which hydrogen or a halogen element having a semi-amorphous or amorphous structure having a lattice strain is added. A semiconductor device comprising a semiconductor as a component.