JPS6446917A - Chemical vapor growth device - Google Patents

Chemical vapor growth device

Info

Publication number
JPS6446917A
JPS6446917A JP20340087A JP20340087A JPS6446917A JP S6446917 A JPS6446917 A JP S6446917A JP 20340087 A JP20340087 A JP 20340087A JP 20340087 A JP20340087 A JP 20340087A JP S6446917 A JPS6446917 A JP S6446917A
Authority
JP
Japan
Prior art keywords
gas
raw material
material gas
flow
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP20340087A
Other languages
Japanese (ja)
Inventor
Keiichi Akagawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP20340087A priority Critical patent/JPS6446917A/en
Publication of JPS6446917A publication Critical patent/JPS6446917A/en
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

PURPOSE:To grow and form a thin-film layer with a steep crystal interface by specifying the flow of a raw material gas in the same direction as heat convection and reducing the generation of a retention layer. CONSTITUTION:A gas introducing pipe 22 for introducing a raw material gas is connected to a gas introducing port 21 in the lowermost section of a reaction pipe 13, and the raw material gas is fed in the upward direction from a lower section. Consequently, the flow of the gas is directed in the same direction as the rise of radiant heat emitted from a susceptor 14, a crystal substrate 16, etc. That is, the directions of the gas flow and heat convection can be made the same, and a retention layer 30 on the surface of the substrate 16 can be reduced remarkably, thus extremely shortening the retention time on the substrate 16 of the gas before changeover after the raw material gas is changed over. Accordingly, a thin-film layer with a steep crystal interface can be grown and shaped.
JP20340087A 1987-08-18 1987-08-18 Chemical vapor growth device Pending JPS6446917A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20340087A JPS6446917A (en) 1987-08-18 1987-08-18 Chemical vapor growth device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20340087A JPS6446917A (en) 1987-08-18 1987-08-18 Chemical vapor growth device

Publications (1)

Publication Number Publication Date
JPS6446917A true JPS6446917A (en) 1989-02-21

Family

ID=16473424

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20340087A Pending JPS6446917A (en) 1987-08-18 1987-08-18 Chemical vapor growth device

Country Status (1)

Country Link
JP (1) JPS6446917A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003104524A1 (en) * 2002-06-10 2003-12-18 東京エレクトロン株式会社 Processing device and processing method
JP2007123628A (en) * 2005-10-28 2007-05-17 Mitsubishi Electric Corp Semiconductor manufacturing method and satellite

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003104524A1 (en) * 2002-06-10 2003-12-18 東京エレクトロン株式会社 Processing device and processing method
JP2007123628A (en) * 2005-10-28 2007-05-17 Mitsubishi Electric Corp Semiconductor manufacturing method and satellite

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