JPS55110034A - Method for growing epitaxial layer - Google Patents

Method for growing epitaxial layer

Info

Publication number
JPS55110034A
JPS55110034A JP1812379A JP1812379A JPS55110034A JP S55110034 A JPS55110034 A JP S55110034A JP 1812379 A JP1812379 A JP 1812379A JP 1812379 A JP1812379 A JP 1812379A JP S55110034 A JPS55110034 A JP S55110034A
Authority
JP
Japan
Prior art keywords
substrate
susceptor
silicon carbide
temperature
epitaxial layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1812379A
Other languages
Japanese (ja)
Inventor
Mamoru Maeda
Yoshio Akai
Mikio Takagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP1812379A priority Critical patent/JPS55110034A/en
Publication of JPS55110034A publication Critical patent/JPS55110034A/en
Pending legal-status Critical Current

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  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To improve the crystallization of a layer to be grown while decreasing the difference between a set temperature for an oven and the temperature of a semiconductor substrate by a method wherein the surface of a susceptor for mounting the substrate to be processed and arranged in a reaction tube is at least covered with silicon carbide.
CONSTITUTION: The base of a susceptor 13 for mounting a semiconductor substrate to be allocated in a reaction tube is made of carbon, and a concaved portion 14 to be contained in the base, the portion being provided with a diameter slightly larger than that of the substrate to be mounted, then a silicon carbide film having a thickness of aporoximately 100μm is made to adhere to the whole surface of the portion. Otherwise, the susceptor 13 as a whole is made of silicon carbide. By so doing, since the difference between a set temperature for an oven and the temperature of the substrate in the heater heating type pressure reduction epitaxial layer growing method cannot be reduced, it is possible to add a pressure reduction process, thus obtain a grown layer whose distribution of film thickness is quite uniform.
COPYRIGHT: (C)1980,JPO&Japio
JP1812379A 1979-02-19 1979-02-19 Method for growing epitaxial layer Pending JPS55110034A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1812379A JPS55110034A (en) 1979-02-19 1979-02-19 Method for growing epitaxial layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1812379A JPS55110034A (en) 1979-02-19 1979-02-19 Method for growing epitaxial layer

Publications (1)

Publication Number Publication Date
JPS55110034A true JPS55110034A (en) 1980-08-25

Family

ID=11962819

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1812379A Pending JPS55110034A (en) 1979-02-19 1979-02-19 Method for growing epitaxial layer

Country Status (1)

Country Link
JP (1) JPS55110034A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100605097B1 (en) * 1999-04-15 2006-07-26 삼성전자주식회사 A susceptor of semiconductor fabricating apparatus

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100605097B1 (en) * 1999-04-15 2006-07-26 삼성전자주식회사 A susceptor of semiconductor fabricating apparatus

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