JPS55110034A - Method for growing epitaxial layer - Google Patents
Method for growing epitaxial layerInfo
- Publication number
- JPS55110034A JPS55110034A JP1812379A JP1812379A JPS55110034A JP S55110034 A JPS55110034 A JP S55110034A JP 1812379 A JP1812379 A JP 1812379A JP 1812379 A JP1812379 A JP 1812379A JP S55110034 A JPS55110034 A JP S55110034A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- susceptor
- silicon carbide
- temperature
- epitaxial layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE: To improve the crystallization of a layer to be grown while decreasing the difference between a set temperature for an oven and the temperature of a semiconductor substrate by a method wherein the surface of a susceptor for mounting the substrate to be processed and arranged in a reaction tube is at least covered with silicon carbide.
CONSTITUTION: The base of a susceptor 13 for mounting a semiconductor substrate to be allocated in a reaction tube is made of carbon, and a concaved portion 14 to be contained in the base, the portion being provided with a diameter slightly larger than that of the substrate to be mounted, then a silicon carbide film having a thickness of aporoximately 100μm is made to adhere to the whole surface of the portion. Otherwise, the susceptor 13 as a whole is made of silicon carbide. By so doing, since the difference between a set temperature for an oven and the temperature of the substrate in the heater heating type pressure reduction epitaxial layer growing method cannot be reduced, it is possible to add a pressure reduction process, thus obtain a grown layer whose distribution of film thickness is quite uniform.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1812379A JPS55110034A (en) | 1979-02-19 | 1979-02-19 | Method for growing epitaxial layer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1812379A JPS55110034A (en) | 1979-02-19 | 1979-02-19 | Method for growing epitaxial layer |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS55110034A true JPS55110034A (en) | 1980-08-25 |
Family
ID=11962819
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1812379A Pending JPS55110034A (en) | 1979-02-19 | 1979-02-19 | Method for growing epitaxial layer |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55110034A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100605097B1 (en) * | 1999-04-15 | 2006-07-26 | 삼성전자주식회사 | A susceptor of semiconductor fabricating apparatus |
-
1979
- 1979-02-19 JP JP1812379A patent/JPS55110034A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100605097B1 (en) * | 1999-04-15 | 2006-07-26 | 삼성전자주식회사 | A susceptor of semiconductor fabricating apparatus |
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