JPS5632397A - Silicon single crystal pulling apparatus - Google Patents
Silicon single crystal pulling apparatusInfo
- Publication number
- JPS5632397A JPS5632397A JP10482479A JP10482479A JPS5632397A JP S5632397 A JPS5632397 A JP S5632397A JP 10482479 A JP10482479 A JP 10482479A JP 10482479 A JP10482479 A JP 10482479A JP S5632397 A JPS5632397 A JP S5632397A
- Authority
- JP
- Japan
- Prior art keywords
- crucible
- silicon
- film
- single crystal
- silicon single
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE: To obtain an apparatus for manufacturing a high quality silicon single crystal by covering a graphite substrate with a silicon nitride film with a silicon carbide film in-between to form a silicon melting crucible.
CONSTITUTION: Crucible 2 is set on rotating support rod 3 in chamber 1. Crucible 2 is formed with graphite substrate 4 and silicon nitride film 6 covered on the substrate surface with silicon carbide film 5 in-between. Starting material is charged into crucible 2 and heated with heater 7. While rotating crucible 2 with rod 3, seed crystal 13 attached to the lower end of pulling chain 14 is dipped in molten silicon 15 and pulled up while being rotated to obtain a silicon single crystal having predetermined crystal orientation. Crucible 2 is heated to 1,300W1,500°C, yet carbon and oxygen are prevented from mixing into silicon 15 owing to film 6 covering the outer surface of crucible 2. The presence of film 5 prevents the reduction of film 6 by substrate 4, and the formation of Si3N4 can be prevented.
COPYRIGHT: (C)1981,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10482479A JPS6018638B2 (en) | 1979-08-17 | 1979-08-17 | Silicon single crystal pulling equipment |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10482479A JPS6018638B2 (en) | 1979-08-17 | 1979-08-17 | Silicon single crystal pulling equipment |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5632397A true JPS5632397A (en) | 1981-04-01 |
JPS6018638B2 JPS6018638B2 (en) | 1985-05-11 |
Family
ID=14391137
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10482479A Expired JPS6018638B2 (en) | 1979-08-17 | 1979-08-17 | Silicon single crystal pulling equipment |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6018638B2 (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59227800A (en) * | 1983-05-20 | 1984-12-21 | Sumitomo Electric Ind Ltd | Member for producing compound semiconductor |
JPS59193870U (en) * | 1983-06-08 | 1984-12-22 | 東北金属工業株式会社 | Single crystal manufacturing crucible |
JPS61251593A (en) * | 1985-04-30 | 1986-11-08 | Kyocera Corp | Crucible for production of high-purity semiconductor single crystal |
JP2007534590A (en) * | 2004-04-29 | 2007-11-29 | ベスビウス クルーシブル カンパニー | Silicon crystallization crucible |
US8147605B2 (en) | 2007-03-26 | 2012-04-03 | Elkem Solar As | Coating composition for a mould |
JP2012246218A (en) * | 2009-09-29 | 2012-12-13 | Shin Etsu Handotai Co Ltd | Silicon single crystal wafer, and method for producing silicon single crystal |
-
1979
- 1979-08-17 JP JP10482479A patent/JPS6018638B2/en not_active Expired
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59227800A (en) * | 1983-05-20 | 1984-12-21 | Sumitomo Electric Ind Ltd | Member for producing compound semiconductor |
JPS59193870U (en) * | 1983-06-08 | 1984-12-22 | 東北金属工業株式会社 | Single crystal manufacturing crucible |
JPS61251593A (en) * | 1985-04-30 | 1986-11-08 | Kyocera Corp | Crucible for production of high-purity semiconductor single crystal |
JP2007534590A (en) * | 2004-04-29 | 2007-11-29 | ベスビウス クルーシブル カンパニー | Silicon crystallization crucible |
US8147605B2 (en) | 2007-03-26 | 2012-04-03 | Elkem Solar As | Coating composition for a mould |
JP2012246218A (en) * | 2009-09-29 | 2012-12-13 | Shin Etsu Handotai Co Ltd | Silicon single crystal wafer, and method for producing silicon single crystal |
Also Published As
Publication number | Publication date |
---|---|
JPS6018638B2 (en) | 1985-05-11 |
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