JPS5632397A - Silicon single crystal pulling apparatus - Google Patents

Silicon single crystal pulling apparatus

Info

Publication number
JPS5632397A
JPS5632397A JP10482479A JP10482479A JPS5632397A JP S5632397 A JPS5632397 A JP S5632397A JP 10482479 A JP10482479 A JP 10482479A JP 10482479 A JP10482479 A JP 10482479A JP S5632397 A JPS5632397 A JP S5632397A
Authority
JP
Japan
Prior art keywords
crucible
silicon
film
single crystal
silicon single
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10482479A
Other languages
Japanese (ja)
Other versions
JPS6018638B2 (en
Inventor
Hideyasu Matsuo
Kazumoto Honma
Yasuhiro Imanishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Coorstek KK
Original Assignee
Toshiba Ceramics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Ceramics Co Ltd filed Critical Toshiba Ceramics Co Ltd
Priority to JP10482479A priority Critical patent/JPS6018638B2/en
Publication of JPS5632397A publication Critical patent/JPS5632397A/en
Publication of JPS6018638B2 publication Critical patent/JPS6018638B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To obtain an apparatus for manufacturing a high quality silicon single crystal by covering a graphite substrate with a silicon nitride film with a silicon carbide film in-between to form a silicon melting crucible.
CONSTITUTION: Crucible 2 is set on rotating support rod 3 in chamber 1. Crucible 2 is formed with graphite substrate 4 and silicon nitride film 6 covered on the substrate surface with silicon carbide film 5 in-between. Starting material is charged into crucible 2 and heated with heater 7. While rotating crucible 2 with rod 3, seed crystal 13 attached to the lower end of pulling chain 14 is dipped in molten silicon 15 and pulled up while being rotated to obtain a silicon single crystal having predetermined crystal orientation. Crucible 2 is heated to 1,300W1,500°C, yet carbon and oxygen are prevented from mixing into silicon 15 owing to film 6 covering the outer surface of crucible 2. The presence of film 5 prevents the reduction of film 6 by substrate 4, and the formation of Si3N4 can be prevented.
COPYRIGHT: (C)1981,JPO&Japio
JP10482479A 1979-08-17 1979-08-17 Silicon single crystal pulling equipment Expired JPS6018638B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10482479A JPS6018638B2 (en) 1979-08-17 1979-08-17 Silicon single crystal pulling equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10482479A JPS6018638B2 (en) 1979-08-17 1979-08-17 Silicon single crystal pulling equipment

Publications (2)

Publication Number Publication Date
JPS5632397A true JPS5632397A (en) 1981-04-01
JPS6018638B2 JPS6018638B2 (en) 1985-05-11

Family

ID=14391137

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10482479A Expired JPS6018638B2 (en) 1979-08-17 1979-08-17 Silicon single crystal pulling equipment

Country Status (1)

Country Link
JP (1) JPS6018638B2 (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59227800A (en) * 1983-05-20 1984-12-21 Sumitomo Electric Ind Ltd Member for producing compound semiconductor
JPS59193870U (en) * 1983-06-08 1984-12-22 東北金属工業株式会社 Single crystal manufacturing crucible
JPS61251593A (en) * 1985-04-30 1986-11-08 Kyocera Corp Crucible for production of high-purity semiconductor single crystal
JP2007534590A (en) * 2004-04-29 2007-11-29 ベスビウス クルーシブル カンパニー Silicon crystallization crucible
US8147605B2 (en) 2007-03-26 2012-04-03 Elkem Solar As Coating composition for a mould
JP2012246218A (en) * 2009-09-29 2012-12-13 Shin Etsu Handotai Co Ltd Silicon single crystal wafer, and method for producing silicon single crystal

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59227800A (en) * 1983-05-20 1984-12-21 Sumitomo Electric Ind Ltd Member for producing compound semiconductor
JPS59193870U (en) * 1983-06-08 1984-12-22 東北金属工業株式会社 Single crystal manufacturing crucible
JPS61251593A (en) * 1985-04-30 1986-11-08 Kyocera Corp Crucible for production of high-purity semiconductor single crystal
JP2007534590A (en) * 2004-04-29 2007-11-29 ベスビウス クルーシブル カンパニー Silicon crystallization crucible
US8147605B2 (en) 2007-03-26 2012-04-03 Elkem Solar As Coating composition for a mould
JP2012246218A (en) * 2009-09-29 2012-12-13 Shin Etsu Handotai Co Ltd Silicon single crystal wafer, and method for producing silicon single crystal

Also Published As

Publication number Publication date
JPS6018638B2 (en) 1985-05-11

Similar Documents

Publication Publication Date Title
JPS6472984A (en) Apparatus for producing single crystal
JPS5632397A (en) Silicon single crystal pulling apparatus
JPS54157780A (en) Production of silicon single crystal
JPS54157779A (en) Production of silicon single crystal
JPS56160400A (en) Growing method for gallium nitride
JPS5547300A (en) Crystal pulling device
JPS5632396A (en) Silicon single crystal pulling apparatus
JPS5345679A (en) Pulling-up apparatus for sillicon single crystal
JPS54122682A (en) Single crystal growing device
JPS54141389A (en) Crucible used in crystal growing device, manufacture of said crucible and crystal growing method using said crucible
JPS56129696A (en) Crystal growing apparatus
JPS55126597A (en) Single crystal growing method
JPS56104799A (en) Production of si single crystal and device therefor
JPS55113695A (en) Single crystal growing device
JPS5637296A (en) Epitaxially growing apparatus
JPS54124878A (en) Continuous lift type single crystal preparation and apparatus thereof
JPS57183394A (en) Method and apparatus for pulling single crystal
JPS54128988A (en) Preparation of single crystal
JPS55116699A (en) Production of silicon carbide crystal layer
JPS5654299A (en) Growing method of lead molybdate single crystal
JPS5645890A (en) Crystal growing apparatus
JPS57123898A (en) Preparation of semi-insulating gaas single crystal
JPS57200286A (en) Preparing apparatus of single crystal
JPS54152465A (en) Manufacture of epitaxial wafer
JPS55116700A (en) Production of silicon carbide crystal layer