JPS5654299A - Growing method of lead molybdate single crystal - Google Patents

Growing method of lead molybdate single crystal

Info

Publication number
JPS5654299A
JPS5654299A JP12769979A JP12769979A JPS5654299A JP S5654299 A JPS5654299 A JP S5654299A JP 12769979 A JP12769979 A JP 12769979A JP 12769979 A JP12769979 A JP 12769979A JP S5654299 A JPS5654299 A JP S5654299A
Authority
JP
Japan
Prior art keywords
lead molybdate
single crystal
heat source
frequency heat
growing method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12769979A
Other languages
Japanese (ja)
Other versions
JPS5745720B2 (en
Inventor
Koichi Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ricoh Co Ltd
Original Assignee
Ricoh Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ricoh Co Ltd filed Critical Ricoh Co Ltd
Priority to JP12769979A priority Critical patent/JPS5654299A/en
Publication of JPS5654299A publication Critical patent/JPS5654299A/en
Publication of JPS5745720B2 publication Critical patent/JPS5745720B2/ja
Granted legal-status Critical Current

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  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To effect a high-yield growing of a good quality lead molybdate using a Czochralski method by lowering a high-frequency heat source at a speed lower than that of the molten surface of lead molybdate.
CONSTITUTION: A lead molybdate powder material is placed in a noble metal crucible and melted with a high-frequency heat source installed around the crucible. A Czochralski method is used so that a seed crystal is brought into contact with the molten liquid and is pulled to produce a single crystal of lead molybdate. In this process, the high-frequency heat source may be lowered at a speed 15W25% of that at which the molten surface of the lead molybdate is lowered or the temperature of the noble metal crucible may be raised.
COPYRIGHT: (C)1981,JPO&Japio
JP12769979A 1979-10-02 1979-10-02 Growing method of lead molybdate single crystal Granted JPS5654299A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12769979A JPS5654299A (en) 1979-10-02 1979-10-02 Growing method of lead molybdate single crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12769979A JPS5654299A (en) 1979-10-02 1979-10-02 Growing method of lead molybdate single crystal

Publications (2)

Publication Number Publication Date
JPS5654299A true JPS5654299A (en) 1981-05-14
JPS5745720B2 JPS5745720B2 (en) 1982-09-29

Family

ID=14966509

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12769979A Granted JPS5654299A (en) 1979-10-02 1979-10-02 Growing method of lead molybdate single crystal

Country Status (1)

Country Link
JP (1) JPS5654299A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018177542A (en) * 2017-04-03 2018-11-15 信越化学工業株式会社 Production method of oxide single crystal, and oxide single crystal pulling-up device
JP2019127428A (en) * 2018-01-26 2019-08-01 住友金属鉱山株式会社 Crystal growth apparatus

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4910883A (en) * 1972-05-31 1974-01-30

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4910883A (en) * 1972-05-31 1974-01-30

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018177542A (en) * 2017-04-03 2018-11-15 信越化学工業株式会社 Production method of oxide single crystal, and oxide single crystal pulling-up device
JP2019127428A (en) * 2018-01-26 2019-08-01 住友金属鉱山株式会社 Crystal growth apparatus

Also Published As

Publication number Publication date
JPS5745720B2 (en) 1982-09-29

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