JPS56104797A - Method of uniform doping by liquid capsule method - Google Patents
Method of uniform doping by liquid capsule methodInfo
- Publication number
- JPS56104797A JPS56104797A JP809180A JP809180A JPS56104797A JP S56104797 A JPS56104797 A JP S56104797A JP 809180 A JP809180 A JP 809180A JP 809180 A JP809180 A JP 809180A JP S56104797 A JPS56104797 A JP S56104797A
- Authority
- JP
- Japan
- Prior art keywords
- crucible
- single crystal
- gaas
- rod
- pulling
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
PURPOSE: When a single crystal is grown by the liquid capsule pulling-up method, the zone melting method is used to dope a single crystal with a dopant uniformly.
CONSTITUTION: In a pressure vessel 10, a crucible 11 is placed so that it can rotate and move vertically. The crucible 11 is equipped with a high temperature heater 12 for heating the content up to higher than the melting point and a low temperature heater 13 for keeping lower than the melting point on the periphery and a pulling-up rod 15 is provided above the crucible 11 so that it can revolve and move vertically. For example, when a single crystal of GaAs is doped with Cr, the crucible 11 is filled with polycrystal GaAs and a Cr source 18 and a seed crystal held with the pulling-up rod 15 are placed thereon. Further, they are sealed with B2O3 layer 19 thereon. Then, the crucible 11 is heated under revolution to melt both upper surface of polycrystal 17 and Cr source 18. The rod 15 is pulled up to start growing a single crystal of GaAs from the seed crystal 14. As the crystal grows, the crucible 17 is pushed up to keep the upper surface always melted to continue the growth of single crystal.
COPYRIGHT: (C)1981,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP809180A JPS56104797A (en) | 1980-01-26 | 1980-01-26 | Method of uniform doping by liquid capsule method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP809180A JPS56104797A (en) | 1980-01-26 | 1980-01-26 | Method of uniform doping by liquid capsule method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS56104797A true JPS56104797A (en) | 1981-08-20 |
Family
ID=11683646
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP809180A Pending JPS56104797A (en) | 1980-01-26 | 1980-01-26 | Method of uniform doping by liquid capsule method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56104797A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4478675A (en) * | 1981-09-18 | 1984-10-23 | Sumitomo Electric Industries, Inc. | Method of producing GaAs single crystals doped with boron |
| JPS62197399A (en) * | 1986-02-26 | 1987-09-01 | Sumitomo Electric Ind Ltd | Method for growing compound single crystal |
-
1980
- 1980-01-26 JP JP809180A patent/JPS56104797A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4478675A (en) * | 1981-09-18 | 1984-10-23 | Sumitomo Electric Industries, Inc. | Method of producing GaAs single crystals doped with boron |
| JPS62197399A (en) * | 1986-02-26 | 1987-09-01 | Sumitomo Electric Ind Ltd | Method for growing compound single crystal |
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