JPS5562881A - Production of multicomponent semiconductor crystal - Google Patents
Production of multicomponent semiconductor crystalInfo
- Publication number
- JPS5562881A JPS5562881A JP13489578A JP13489578A JPS5562881A JP S5562881 A JPS5562881 A JP S5562881A JP 13489578 A JP13489578 A JP 13489578A JP 13489578 A JP13489578 A JP 13489578A JP S5562881 A JPS5562881 A JP S5562881A
- Authority
- JP
- Japan
- Prior art keywords
- ampule
- seed
- melted
- pbte
- polycrystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Semiconductor Lasers (AREA)
Abstract
PURPOSE: To grow the title crystal having no grain boundary in a high yield by filling a single crystal seed, having a crystal growing face along the cross section of a heat resistant ampule with one end closed tight, into a portion in the vicinity of the upper part of the ampule shoulder formed by the closing from the tip of the ampule after which a polycrystal multicomponent semiconductor material is placed on the seed and melted.
CONSTITUTION: PbTe single crystal seed 11 having no grain boundary on its shoulder is filled into the tip portion of quartz ampule 12. Polycrystal PbTe crystals 13 are placed on seed 11, and after evacuating ampule 12 one end C of ampule 12 is melted and sealed. Ampule 12 is then put into core tube 22 of heating furnace 21 provided with a lift mechanism, and the furnace temp. is raised so that the temp. distribution of the diagram is obtd. In the diagram, X axis is a furnace temp., Y axis is a distance along the axis in tube 22, and S point is a position having the m.p. of PbTe in tube 22. When crystals 13 ar melted, ampule 12 is slowly heightened to a position at which seed 11 is melted somewhat. After fitting seed 11 and the molten polycrystal, ampule 12 is lowered to grow a single crystal.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13489578A JPS5562881A (en) | 1978-10-31 | 1978-10-31 | Production of multicomponent semiconductor crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13489578A JPS5562881A (en) | 1978-10-31 | 1978-10-31 | Production of multicomponent semiconductor crystal |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5562881A true JPS5562881A (en) | 1980-05-12 |
| JPS5761712B2 JPS5761712B2 (en) | 1982-12-25 |
Family
ID=15139022
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13489578A Granted JPS5562881A (en) | 1978-10-31 | 1978-10-31 | Production of multicomponent semiconductor crystal |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5562881A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0340987A (en) * | 1989-07-10 | 1991-02-21 | Nippon Telegr & Teleph Corp <Ntt> | Growing method for single crystal |
| JPH0834454A (en) * | 1994-07-21 | 1996-02-06 | Toyo Glass Co Ltd | Inner lid for container |
-
1978
- 1978-10-31 JP JP13489578A patent/JPS5562881A/en active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0340987A (en) * | 1989-07-10 | 1991-02-21 | Nippon Telegr & Teleph Corp <Ntt> | Growing method for single crystal |
| JPH0834454A (en) * | 1994-07-21 | 1996-02-06 | Toyo Glass Co Ltd | Inner lid for container |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5761712B2 (en) | 1982-12-25 |
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