FR2122768A5 - Ruby single crystals - prodn in cold crucibles in an oxidising atmos - Google Patents

Ruby single crystals - prodn in cold crucibles in an oxidising atmos

Info

Publication number
FR2122768A5
FR2122768A5 FR7102151A FR7102151A FR2122768A5 FR 2122768 A5 FR2122768 A5 FR 2122768A5 FR 7102151 A FR7102151 A FR 7102151A FR 7102151 A FR7102151 A FR 7102151A FR 2122768 A5 FR2122768 A5 FR 2122768A5
Authority
FR
France
Prior art keywords
single crystals
prodn
ruby
charge
oxidising atmos
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7102151A
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
FIZICHESKY INST IMEN
Original Assignee
FIZICHESKY INST IMEN
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by FIZICHESKY INST IMEN filed Critical FIZICHESKY INST IMEN
Priority to FR7102151A priority Critical patent/FR2122768A5/en
Application granted granted Critical
Publication of FR2122768A5 publication Critical patent/FR2122768A5/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/20—Aluminium oxides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

Growing of ruby single crystals in which the charge in a crucible is fused by high frequency heating, and a seed crystal is immersed in the molten mass from which the desired single crystal is thereafter drawn, but with the modification whereby the ruby crystals are grown in an oxidising atmos. metallic Al being introduced into the charge and then melted and superheated by a high frequency field so as to melt the charge and transmit the field energy thereto directly without heating the crucible.
FR7102151A 1971-01-22 1971-01-22 Ruby single crystals - prodn in cold crucibles in an oxidising atmos Expired FR2122768A5 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7102151A FR2122768A5 (en) 1971-01-22 1971-01-22 Ruby single crystals - prodn in cold crucibles in an oxidising atmos

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7102151A FR2122768A5 (en) 1971-01-22 1971-01-22 Ruby single crystals - prodn in cold crucibles in an oxidising atmos

Publications (1)

Publication Number Publication Date
FR2122768A5 true FR2122768A5 (en) 1972-09-01

Family

ID=9070731

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7102151A Expired FR2122768A5 (en) 1971-01-22 1971-01-22 Ruby single crystals - prodn in cold crucibles in an oxidising atmos

Country Status (1)

Country Link
FR (1) FR2122768A5 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4187139A (en) * 1973-02-14 1980-02-05 U.S. Philips Corporation Growth of single crystal bismuth silicon oxide
WO2006012925A1 (en) * 2004-08-05 2006-02-09 Pusch, Bernard Apparatus for growing single crystals from melt

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4187139A (en) * 1973-02-14 1980-02-05 U.S. Philips Corporation Growth of single crystal bismuth silicon oxide
WO2006012925A1 (en) * 2004-08-05 2006-02-09 Pusch, Bernard Apparatus for growing single crystals from melt

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Legal Events

Date Code Title Description
ST Notification of lapse