JPS5492597A - Semi-insulating gallium arsenide crystals produced by liquid capsule pulling method - Google Patents
Semi-insulating gallium arsenide crystals produced by liquid capsule pulling methodInfo
- Publication number
- JPS5492597A JPS5492597A JP15789077A JP15789077A JPS5492597A JP S5492597 A JPS5492597 A JP S5492597A JP 15789077 A JP15789077 A JP 15789077A JP 15789077 A JP15789077 A JP 15789077A JP S5492597 A JPS5492597 A JP S5492597A
- Authority
- JP
- Japan
- Prior art keywords
- gaas
- ppm
- charged
- single crystals
- semi
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE: To control conversion to P type or N type due to high temp. at the time of producing a semiconductor element by producing semi-insulating GaAs crystals contg. a specified amt. of Cr, oxygen and Si, and having a specific electric resistance above a specified value by a liquid capsule pulling method.
CONSTITUTION: Ga2O3 powder, Si-contg. GaAs polycrystals and Cr are charged into quartz crucible 13 put in furnace body 8 and held by graphite holder 12, and B2O3 14 thoroughly dried is further charged to prevent acattering of srsenic at the time of pulling single crystals. Furnace 8 is evacuated and kept under elevated press. of N2. The charged materials are thoroughly melted with high frequency coils 9, and GaAs single crystals 16 are grown using GaAs single crystal seed 15. Single crystals 16 contain 1W100 ppm of deep acceptor impurity Cr, 0.5W10 ppm of deep donor impurity oxygen and 0.1W5 ppm of shallow donor impurity Si, and have a specific electric resistance at 300°K above 106 Ωcm.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15789077A JPS5492597A (en) | 1977-12-29 | 1977-12-29 | Semi-insulating gallium arsenide crystals produced by liquid capsule pulling method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15789077A JPS5492597A (en) | 1977-12-29 | 1977-12-29 | Semi-insulating gallium arsenide crystals produced by liquid capsule pulling method |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5492597A true JPS5492597A (en) | 1979-07-21 |
Family
ID=15659643
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15789077A Pending JPS5492597A (en) | 1977-12-29 | 1977-12-29 | Semi-insulating gallium arsenide crystals produced by liquid capsule pulling method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5492597A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59203794A (en) * | 1983-05-07 | 1984-11-17 | Agency Of Ind Science & Technol | Preparation of semiinsulative gaas single crystal |
JPH01164800A (en) * | 1987-12-18 | 1989-06-28 | Hitachi Cable Ltd | Semiinsulating gallium arsenide single crystal |
-
1977
- 1977-12-29 JP JP15789077A patent/JPS5492597A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59203794A (en) * | 1983-05-07 | 1984-11-17 | Agency Of Ind Science & Technol | Preparation of semiinsulative gaas single crystal |
JPH01164800A (en) * | 1987-12-18 | 1989-06-28 | Hitachi Cable Ltd | Semiinsulating gallium arsenide single crystal |
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