JPS5492597A - Semi-insulating gallium arsenide crystals produced by liquid capsule pulling method - Google Patents

Semi-insulating gallium arsenide crystals produced by liquid capsule pulling method

Info

Publication number
JPS5492597A
JPS5492597A JP15789077A JP15789077A JPS5492597A JP S5492597 A JPS5492597 A JP S5492597A JP 15789077 A JP15789077 A JP 15789077A JP 15789077 A JP15789077 A JP 15789077A JP S5492597 A JPS5492597 A JP S5492597A
Authority
JP
Japan
Prior art keywords
gaas
ppm
charged
single crystals
semi
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15789077A
Other languages
Japanese (ja)
Inventor
Mizuhiro Umehara
Kazutoshi Asakusa
Makoto Tsunashima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Metal Corp
Original Assignee
Mitsubishi Metal Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Metal Corp filed Critical Mitsubishi Metal Corp
Priority to JP15789077A priority Critical patent/JPS5492597A/en
Publication of JPS5492597A publication Critical patent/JPS5492597A/en
Pending legal-status Critical Current

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  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To control conversion to P type or N type due to high temp. at the time of producing a semiconductor element by producing semi-insulating GaAs crystals contg. a specified amt. of Cr, oxygen and Si, and having a specific electric resistance above a specified value by a liquid capsule pulling method.
CONSTITUTION: Ga2O3 powder, Si-contg. GaAs polycrystals and Cr are charged into quartz crucible 13 put in furnace body 8 and held by graphite holder 12, and B2O3 14 thoroughly dried is further charged to prevent acattering of srsenic at the time of pulling single crystals. Furnace 8 is evacuated and kept under elevated press. of N2. The charged materials are thoroughly melted with high frequency coils 9, and GaAs single crystals 16 are grown using GaAs single crystal seed 15. Single crystals 16 contain 1W100 ppm of deep acceptor impurity Cr, 0.5W10 ppm of deep donor impurity oxygen and 0.1W5 ppm of shallow donor impurity Si, and have a specific electric resistance at 300°K above 106 Ωcm.
COPYRIGHT: (C)1979,JPO&Japio
JP15789077A 1977-12-29 1977-12-29 Semi-insulating gallium arsenide crystals produced by liquid capsule pulling method Pending JPS5492597A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15789077A JPS5492597A (en) 1977-12-29 1977-12-29 Semi-insulating gallium arsenide crystals produced by liquid capsule pulling method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15789077A JPS5492597A (en) 1977-12-29 1977-12-29 Semi-insulating gallium arsenide crystals produced by liquid capsule pulling method

Publications (1)

Publication Number Publication Date
JPS5492597A true JPS5492597A (en) 1979-07-21

Family

ID=15659643

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15789077A Pending JPS5492597A (en) 1977-12-29 1977-12-29 Semi-insulating gallium arsenide crystals produced by liquid capsule pulling method

Country Status (1)

Country Link
JP (1) JPS5492597A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59203794A (en) * 1983-05-07 1984-11-17 Agency Of Ind Science & Technol Preparation of semiinsulative gaas single crystal
JPH01164800A (en) * 1987-12-18 1989-06-28 Hitachi Cable Ltd Semiinsulating gallium arsenide single crystal

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59203794A (en) * 1983-05-07 1984-11-17 Agency Of Ind Science & Technol Preparation of semiinsulative gaas single crystal
JPH01164800A (en) * 1987-12-18 1989-06-28 Hitachi Cable Ltd Semiinsulating gallium arsenide single crystal

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