GB788375A - Improvements in or relating to the control of the internal junction structure of a crystal - Google Patents
Improvements in or relating to the control of the internal junction structure of a crystalInfo
- Publication number
- GB788375A GB788375A GB30931/55A GB3093155A GB788375A GB 788375 A GB788375 A GB 788375A GB 30931/55 A GB30931/55 A GB 30931/55A GB 3093155 A GB3093155 A GB 3093155A GB 788375 A GB788375 A GB 788375A
- Authority
- GB
- United Kingdom
- Prior art keywords
- crystal
- vessel
- extensions
- grown
- different
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/85—Thermoelectric active materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/14—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method characterised by the seed, e.g. its crystallographic orientation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1092—Shape defined by a solid member other than seed or product [e.g., Bridgman-Stockbarger]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
<PICT:0788375/III/1> In a method of producing predetermined junctures in a crystal grown from a melt in a vessel, coincident plural seedgrowths of different stratification are initiated in the melt in a plurality of extensions to the vessel, and the respective seed-growths therefrom are allowed to penetrate into the main body of the vessel at equal growth rates whereby the crystal formed in the vessel is composed of component portions of the plurality of coincident growths, thereby forming junctures at their respective contacting faces within the crystal. A tubular vessel 1 having two radially conically formed extensions 2 and 3 is filled with material, such as bismuth and antimony, which is melted by heating coils 7, 8, 12, 14 and 16, and the temperature in extensions 2 and 3 is lowered by adjusting a rheostat 11 to initiate seed growth at terminals 5 and 6, from which crystals of different orientation grow until they unite at 4. A temperature gradient is maintained in the main body of the vessel 1 by adjusting rheostats 13, 15 and 17 to cause a crystal to grow therein having a junction face 20 between the two parts of the crystal 18 and 19 having different laminations or strata. In another embodiment, a vessel is used having four extensions similar to 2 and 3 above, and a crystal is grown having four segments of different orientation. In a modification, the vessel 1 has two conical extensions, with open ends, at the lower end and crystal seeds having differing orientation are placed against the open ends, the two parts of the crystal being grown from the seeds by adjustment of temperature as above.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US465200A US2791813A (en) | 1954-10-28 | 1954-10-28 | Apparatus and method for growing crystals having a controlled internal junction structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB788375A true GB788375A (en) | 1958-01-02 |
Family
ID=23846851
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB30931/55A Expired GB788375A (en) | 1954-10-28 | 1955-10-28 | Improvements in or relating to the control of the internal junction structure of a crystal |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US2791813A (en) |
| BE (1) | BE542375A (en) |
| DE (1) | DE1069389B (en) |
| FR (1) | FR1137851A (en) |
| GB (1) | GB788375A (en) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3485289A (en) * | 1966-02-01 | 1969-12-23 | Mitsubishi Chem Ind | Method for the manufacture of aluminum or aluminum alloy castings |
| US3598169A (en) * | 1969-03-13 | 1971-08-10 | United Aircraft Corp | Method and apparatus for casting directionally solidified discs and the like |
| US3738416A (en) * | 1969-03-13 | 1973-06-12 | United Aircraft Corp | Method of making double-oriented single crystal castings |
| US3857436A (en) * | 1973-02-13 | 1974-12-31 | D Petrov | Method and apparatus for manufacturing monocrystalline articles |
| CA1142839A (en) * | 1978-12-13 | 1983-03-15 | Bruce E. Terkelsen | Method and apparatus for epitaxial solidification |
| US4353405A (en) * | 1980-04-18 | 1982-10-12 | Trw Inc. | Casting method |
| US4469160A (en) * | 1981-12-23 | 1984-09-04 | United Technologies Corporation | Single crystal solidification using multiple seeds |
| US5266151A (en) * | 1992-03-04 | 1993-11-30 | Advanced Crystal Products Corporation | Inside edge defined, self-filling (IESF) die for crystal growth |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US1733752A (en) * | 1929-10-29 | Refractory metal and its manufacture | ||
| US1256929A (en) * | 1914-05-16 | 1918-02-19 | Otto Schaller | Process of producing metallic wires, filaments, and the like. |
| US1793672A (en) * | 1926-02-16 | 1931-02-24 | Percy W Bridgman | Crystals and their manufacture |
| BE500569A (en) * | 1950-01-13 | |||
| US2694024A (en) * | 1950-07-24 | 1954-11-09 | Bell Telephone Labor Inc | Semiconductor bodies for signal translating devices |
-
0
- DE DENDAT1069389D patent/DE1069389B/en active Pending
- BE BE542375D patent/BE542375A/xx unknown
-
1954
- 1954-10-28 US US465200A patent/US2791813A/en not_active Expired - Lifetime
-
1955
- 1955-10-28 FR FR1137851D patent/FR1137851A/en not_active Expired
- 1955-10-28 GB GB30931/55A patent/GB788375A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| US2791813A (en) | 1957-05-14 |
| BE542375A (en) | |
| FR1137851A (en) | 1957-06-05 |
| DE1069389B (en) | 1959-11-19 |
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