GB788375A - Improvements in or relating to the control of the internal junction structure of a crystal - Google Patents

Improvements in or relating to the control of the internal junction structure of a crystal

Info

Publication number
GB788375A
GB788375A GB30931/55A GB3093155A GB788375A GB 788375 A GB788375 A GB 788375A GB 30931/55 A GB30931/55 A GB 30931/55A GB 3093155 A GB3093155 A GB 3093155A GB 788375 A GB788375 A GB 788375A
Authority
GB
United Kingdom
Prior art keywords
crystal
vessel
extensions
grown
different
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB30931/55A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of GB788375A publication Critical patent/GB788375A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/14—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method characterised by the seed, e.g. its crystallographic orientation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1092—Shape defined by a solid member other than seed or product [e.g., Bridgman-Stockbarger]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

<PICT:0788375/III/1> In a method of producing predetermined junctures in a crystal grown from a melt in a vessel, coincident plural seedgrowths of different stratification are initiated in the melt in a plurality of extensions to the vessel, and the respective seed-growths therefrom are allowed to penetrate into the main body of the vessel at equal growth rates whereby the crystal formed in the vessel is composed of component portions of the plurality of coincident growths, thereby forming junctures at their respective contacting faces within the crystal. A tubular vessel 1 having two radially conically formed extensions 2 and 3 is filled with material, such as bismuth and antimony, which is melted by heating coils 7, 8, 12, 14 and 16, and the temperature in extensions 2 and 3 is lowered by adjusting a rheostat 11 to initiate seed growth at terminals 5 and 6, from which crystals of different orientation grow until they unite at 4. A temperature gradient is maintained in the main body of the vessel 1 by adjusting rheostats 13, 15 and 17 to cause a crystal to grow therein having a junction face 20 between the two parts of the crystal 18 and 19 having different laminations or strata. In another embodiment, a vessel is used having four extensions similar to 2 and 3 above, and a crystal is grown having four segments of different orientation. In a modification, the vessel 1 has two conical extensions, with open ends, at the lower end and crystal seeds having differing orientation are placed against the open ends, the two parts of the crystal being grown from the seeds by adjustment of temperature as above.
GB30931/55A 1954-10-28 1955-10-28 Improvements in or relating to the control of the internal junction structure of a crystal Expired GB788375A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US465200A US2791813A (en) 1954-10-28 1954-10-28 Apparatus and method for growing crystals having a controlled internal junction structure

Publications (1)

Publication Number Publication Date
GB788375A true GB788375A (en) 1958-01-02

Family

ID=23846851

Family Applications (1)

Application Number Title Priority Date Filing Date
GB30931/55A Expired GB788375A (en) 1954-10-28 1955-10-28 Improvements in or relating to the control of the internal junction structure of a crystal

Country Status (5)

Country Link
US (1) US2791813A (en)
BE (1) BE542375A (en)
DE (1) DE1069389B (en)
FR (1) FR1137851A (en)
GB (1) GB788375A (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3485289A (en) * 1966-02-01 1969-12-23 Mitsubishi Chem Ind Method for the manufacture of aluminum or aluminum alloy castings
US3738416A (en) * 1969-03-13 1973-06-12 United Aircraft Corp Method of making double-oriented single crystal castings
US3598169A (en) * 1969-03-13 1971-08-10 United Aircraft Corp Method and apparatus for casting directionally solidified discs and the like
US3857436A (en) * 1973-02-13 1974-12-31 D Petrov Method and apparatus for manufacturing monocrystalline articles
CA1142839A (en) * 1978-12-13 1983-03-15 Bruce E. Terkelsen Method and apparatus for epitaxial solidification
US4353405A (en) * 1980-04-18 1982-10-12 Trw Inc. Casting method
US4469160A (en) * 1981-12-23 1984-09-04 United Technologies Corporation Single crystal solidification using multiple seeds
US5266151A (en) * 1992-03-04 1993-11-30 Advanced Crystal Products Corporation Inside edge defined, self-filling (IESF) die for crystal growth

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1733752A (en) * 1929-10-29 Refractory metal and its manufacture
US1256929A (en) * 1914-05-16 1918-02-19 Otto Schaller Process of producing metallic wires, filaments, and the like.
US1793672A (en) * 1926-02-16 1931-02-24 Percy W Bridgman Crystals and their manufacture
BE500569A (en) * 1950-01-13
US2694024A (en) * 1950-07-24 1954-11-09 Bell Telephone Labor Inc Semiconductor bodies for signal translating devices

Also Published As

Publication number Publication date
DE1069389B (en) 1959-11-19
US2791813A (en) 1957-05-14
BE542375A (en)
FR1137851A (en) 1957-06-05

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