JPS56104790A - Production of nondislocation single crystal of semiconductor through float zone process - Google Patents
Production of nondislocation single crystal of semiconductor through float zone processInfo
- Publication number
- JPS56104790A JPS56104790A JP359080A JP359080A JPS56104790A JP S56104790 A JPS56104790 A JP S56104790A JP 359080 A JP359080 A JP 359080A JP 359080 A JP359080 A JP 359080A JP S56104790 A JPS56104790 A JP S56104790A
- Authority
- JP
- Japan
- Prior art keywords
- crystal
- nondislocation
- semiconductor
- seed crystal
- formation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
PURPOSE: A seed crystal are previously fused to a rod of polycrystal semiconductor and a nondislocation single crystal of semiconductor is produced through the float zone process, whereby heat shock is relaxed on seeding to inhibit the formation of dislocation and facilitate the formation of nondislocation crystal.
CONSTITUTION: A seed crystal 3 is uniformly heated to high temperatures by the radiation from preheater 1 and brought into contact with the melted part 6 at the top end of a rod of polycrystal semiconductor 5 that was previously prepared. After the seed crystal 3 and the melted part 6 sufficiently intermingle, the preheater 1 is removed, the neck part of the crystal is more narrowed in diameter and the crystal is grown to a prescribed length. Then, the crystal is gradually made thicker. Thus, nondislocation crystals of large diameter is grown good reproducibility. In this process, the seed crystal comes is previously heated at high temperature and heat shock caused when the seed crystal into contact with the melted part is relaxed to facilitate a formation of nondislocation crystal.
COPYRIGHT: (C)1981,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP359080A JPS56104790A (en) | 1980-01-18 | 1980-01-18 | Production of nondislocation single crystal of semiconductor through float zone process |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP359080A JPS56104790A (en) | 1980-01-18 | 1980-01-18 | Production of nondislocation single crystal of semiconductor through float zone process |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS56104790A true JPS56104790A (en) | 1981-08-20 |
JPS6110429B2 JPS6110429B2 (en) | 1986-03-29 |
Family
ID=11561671
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP359080A Granted JPS56104790A (en) | 1980-01-18 | 1980-01-18 | Production of nondislocation single crystal of semiconductor through float zone process |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56104790A (en) |
-
1980
- 1980-01-18 JP JP359080A patent/JPS56104790A/en active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS6110429B2 (en) | 1986-03-29 |
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