JPS56104790A - Production of nondislocation single crystal of semiconductor through float zone process - Google Patents

Production of nondislocation single crystal of semiconductor through float zone process

Info

Publication number
JPS56104790A
JPS56104790A JP359080A JP359080A JPS56104790A JP S56104790 A JPS56104790 A JP S56104790A JP 359080 A JP359080 A JP 359080A JP 359080 A JP359080 A JP 359080A JP S56104790 A JPS56104790 A JP S56104790A
Authority
JP
Japan
Prior art keywords
crystal
nondislocation
semiconductor
seed crystal
formation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP359080A
Other languages
Japanese (ja)
Other versions
JPS6110429B2 (en
Inventor
Jiro Osaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP359080A priority Critical patent/JPS56104790A/en
Publication of JPS56104790A publication Critical patent/JPS56104790A/en
Publication of JPS6110429B2 publication Critical patent/JPS6110429B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE: A seed crystal are previously fused to a rod of polycrystal semiconductor and a nondislocation single crystal of semiconductor is produced through the float zone process, whereby heat shock is relaxed on seeding to inhibit the formation of dislocation and facilitate the formation of nondislocation crystal.
CONSTITUTION: A seed crystal 3 is uniformly heated to high temperatures by the radiation from preheater 1 and brought into contact with the melted part 6 at the top end of a rod of polycrystal semiconductor 5 that was previously prepared. After the seed crystal 3 and the melted part 6 sufficiently intermingle, the preheater 1 is removed, the neck part of the crystal is more narrowed in diameter and the crystal is grown to a prescribed length. Then, the crystal is gradually made thicker. Thus, nondislocation crystals of large diameter is grown good reproducibility. In this process, the seed crystal comes is previously heated at high temperature and heat shock caused when the seed crystal into contact with the melted part is relaxed to facilitate a formation of nondislocation crystal.
COPYRIGHT: (C)1981,JPO&Japio
JP359080A 1980-01-18 1980-01-18 Production of nondislocation single crystal of semiconductor through float zone process Granted JPS56104790A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP359080A JPS56104790A (en) 1980-01-18 1980-01-18 Production of nondislocation single crystal of semiconductor through float zone process

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP359080A JPS56104790A (en) 1980-01-18 1980-01-18 Production of nondislocation single crystal of semiconductor through float zone process

Publications (2)

Publication Number Publication Date
JPS56104790A true JPS56104790A (en) 1981-08-20
JPS6110429B2 JPS6110429B2 (en) 1986-03-29

Family

ID=11561671

Family Applications (1)

Application Number Title Priority Date Filing Date
JP359080A Granted JPS56104790A (en) 1980-01-18 1980-01-18 Production of nondislocation single crystal of semiconductor through float zone process

Country Status (1)

Country Link
JP (1) JPS56104790A (en)

Also Published As

Publication number Publication date
JPS6110429B2 (en) 1986-03-29

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