JPS55126596A - Production of single crystal - Google Patents
Production of single crystalInfo
- Publication number
- JPS55126596A JPS55126596A JP3168979A JP3168979A JPS55126596A JP S55126596 A JPS55126596 A JP S55126596A JP 3168979 A JP3168979 A JP 3168979A JP 3168979 A JP3168979 A JP 3168979A JP S55126596 A JPS55126596 A JP S55126596A
- Authority
- JP
- Japan
- Prior art keywords
- crucible
- heater
- crystal
- pulled
- length
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE: To produce a high quality single crystal of a large diameter and a long size in a high yield by melting starting material in a crucible with a heater and starting a relatively lowering motion of the crucible and the heater at a specified speed when a crystal pulled reaches a specified size.
CONSTITUTION: Heater 2 and crucible 1 are set so that central position A of the effective heating length of heater 2 coincides with central position B of crucible 1 housing starting material such as LiTaO3 in the longitudinal direction. The material in crucible 1 is melted by high frequency heating with heater 2. Seed crystal 5 supported by holder 4 is then pulled, and when a crystal pulled is grown to a length of 0.70dW0.95d with respect to parallel length portion l of predetermined diameter d, crucible 1 and heater 2 are subjected to a relatively lowering motion so that relatively lowering speed Vw becomes 0.6W0.9 time as high as lowering speed Vw of the surface of the melt in crucible 1.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3168979A JPS55126596A (en) | 1979-03-20 | 1979-03-20 | Production of single crystal |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3168979A JPS55126596A (en) | 1979-03-20 | 1979-03-20 | Production of single crystal |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS55126596A true JPS55126596A (en) | 1980-09-30 |
JPS615440B2 JPS615440B2 (en) | 1986-02-18 |
Family
ID=12338040
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3168979A Granted JPS55126596A (en) | 1979-03-20 | 1979-03-20 | Production of single crystal |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55126596A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59203792A (en) * | 1983-04-30 | 1984-11-17 | Fujitsu Ltd | Process for growing single crystal |
CN103643292A (en) * | 2013-12-27 | 2014-03-19 | 中国工程物理研究院化工材料研究所 | Method and device for growing near-stoichiometric-ratio lithium niobate crystals |
-
1979
- 1979-03-20 JP JP3168979A patent/JPS55126596A/en active Granted
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59203792A (en) * | 1983-04-30 | 1984-11-17 | Fujitsu Ltd | Process for growing single crystal |
CN103643292A (en) * | 2013-12-27 | 2014-03-19 | 中国工程物理研究院化工材料研究所 | Method and device for growing near-stoichiometric-ratio lithium niobate crystals |
Also Published As
Publication number | Publication date |
---|---|
JPS615440B2 (en) | 1986-02-18 |
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