JPS5756399A - Manufacture of single crystal of compound with high decomposition pressure - Google Patents
Manufacture of single crystal of compound with high decomposition pressureInfo
- Publication number
- JPS5756399A JPS5756399A JP12849780A JP12849780A JPS5756399A JP S5756399 A JPS5756399 A JP S5756399A JP 12849780 A JP12849780 A JP 12849780A JP 12849780 A JP12849780 A JP 12849780A JP S5756399 A JPS5756399 A JP S5756399A
- Authority
- JP
- Japan
- Prior art keywords
- crystal
- axis
- melt
- opening part
- manufacture
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
PURPOSE: To manufacture the titled crystal in a high yield by setting a partition wall having an opening part between molten starting material and a capsule material bringing a seed crystal whose crystal axis in the pulling direction is tilted by a specified angle from the <100> axis toward the <111> axis into contact with the molten starting material through the capsule material and the opening part, and pulling up the seed crystal.
CONSTITUTION: Starting material such as GaAs, GaP or InP is put in a crucible 2 in a high pressure container 1 and converted into a melt 3 with a heater 5. The surface of the melt 3 is covered with a molten capsule material 4 consist of B2O3, and a partition wall 9 having a circular opening part is set between the material 4 and the melt 3. A seed crystal 6 whose crystal axis in the pulling direction is tilted by 10W30° from the <100> axis toward the <111> axis is attached to a rotating jig 7 and brought into contact with the melt 3 through the material 4, and by pulling up the crystal 6 through the opening part of the wall 9 while rotating it, a single crystal 8 is manufactured in a high yield.
COPYRIGHT: (C)1982,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12849780A JPS5756399A (en) | 1980-09-18 | 1980-09-18 | Manufacture of single crystal of compound with high decomposition pressure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12849780A JPS5756399A (en) | 1980-09-18 | 1980-09-18 | Manufacture of single crystal of compound with high decomposition pressure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5756399A true JPS5756399A (en) | 1982-04-03 |
Family
ID=14986199
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12849780A Pending JPS5756399A (en) | 1980-09-18 | 1980-09-18 | Manufacture of single crystal of compound with high decomposition pressure |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5756399A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61178491A (en) * | 1985-01-31 | 1986-08-11 | Nec Corp | Method for pulling up single crystal |
| JPH033322A (en) * | 1989-05-31 | 1991-01-09 | Shin Etsu Handotai Co Ltd | Liquid phase epitaxy method |
| US5851284A (en) * | 1995-11-21 | 1998-12-22 | Nippon Telegraph And Telephone Corporation | Process for producing garnet single crystal |
-
1980
- 1980-09-18 JP JP12849780A patent/JPS5756399A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61178491A (en) * | 1985-01-31 | 1986-08-11 | Nec Corp | Method for pulling up single crystal |
| JPH0155239B2 (en) * | 1985-01-31 | 1989-11-22 | Nippon Electric Co | |
| JPH033322A (en) * | 1989-05-31 | 1991-01-09 | Shin Etsu Handotai Co Ltd | Liquid phase epitaxy method |
| US5851284A (en) * | 1995-11-21 | 1998-12-22 | Nippon Telegraph And Telephone Corporation | Process for producing garnet single crystal |
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