JPS5645890A - Crystal growing apparatus - Google Patents
Crystal growing apparatusInfo
- Publication number
- JPS5645890A JPS5645890A JP8943080A JP8943080A JPS5645890A JP S5645890 A JPS5645890 A JP S5645890A JP 8943080 A JP8943080 A JP 8943080A JP 8943080 A JP8943080 A JP 8943080A JP S5645890 A JPS5645890 A JP S5645890A
- Authority
- JP
- Japan
- Prior art keywords
- container
- heating
- crystal growing
- melt
- phase
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE: To enhance the quality of a grown crystal by heating a semiconductor single crystal growing material in a container provided with a crystal pulling means so that the lower side of the material is maintained at the solid phase and the upper side is converted into a liq. phase.
CONSTITUTION: Container 2 holding crystal growing material 3 such as Si is provided with heating means 4 composed of vertically divided means 4A, 4B. Material 3 in the upper part of container 2 is converted into liq. phase 3a by heating with upper means 4A, and material 3 in the lower part of container 2 in maintained at solid phase 3b by heating at a lower temp. with lower means 4B. Seed crystal 8 can be pulled up with chuck 9 over container 2. As a result, melt 3a can be reduced in depth (d) and the apparent viscosity of melt 3a can be increased, resulting in temp. stabilization at the single crystal growing part, melt surface stabilization and a reduction of the vol. of oxygen introduced from container 2.
COPYRIGHT: (C)1981,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8943080A JPS5645890A (en) | 1980-06-30 | 1980-06-30 | Crystal growing apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8943080A JPS5645890A (en) | 1980-06-30 | 1980-06-30 | Crystal growing apparatus |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12133979A Division JPS5850951B2 (en) | 1979-09-20 | 1979-09-20 | Crystal growth method and crystal growth equipment used for this method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5645890A true JPS5645890A (en) | 1981-04-25 |
Family
ID=13970437
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8943080A Pending JPS5645890A (en) | 1980-06-30 | 1980-06-30 | Crystal growing apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5645890A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5872508A (en) * | 1981-10-06 | 1983-04-30 | インペリアル・ケミカル・インダストリ−ズ・ピ−エルシ− | Repulsion of nematode living in soil and nematocidal condensed solution composition therefor |
| JPH0532479A (en) * | 1991-02-20 | 1993-02-09 | Sumitomo Metal Ind Ltd | Crystal growth device and method for growing crystal using the same device |
| AT400848B (en) * | 1984-08-24 | 1996-03-25 | Sony Corp | DEVICE FOR BREEDING A SINGLE CRYSTAL |
-
1980
- 1980-06-30 JP JP8943080A patent/JPS5645890A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5872508A (en) * | 1981-10-06 | 1983-04-30 | インペリアル・ケミカル・インダストリ−ズ・ピ−エルシ− | Repulsion of nematode living in soil and nematocidal condensed solution composition therefor |
| AT400848B (en) * | 1984-08-24 | 1996-03-25 | Sony Corp | DEVICE FOR BREEDING A SINGLE CRYSTAL |
| JPH0532479A (en) * | 1991-02-20 | 1993-02-09 | Sumitomo Metal Ind Ltd | Crystal growth device and method for growing crystal using the same device |
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