JPS5345679A - Pulling-up apparatus for sillicon single crystal - Google Patents

Pulling-up apparatus for sillicon single crystal

Info

Publication number
JPS5345679A
JPS5345679A JP12035576A JP12035576A JPS5345679A JP S5345679 A JPS5345679 A JP S5345679A JP 12035576 A JP12035576 A JP 12035576A JP 12035576 A JP12035576 A JP 12035576A JP S5345679 A JPS5345679 A JP S5345679A
Authority
JP
Japan
Prior art keywords
pulling
single crystal
sillicon
eheating
graphite
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12035576A
Other languages
Japanese (ja)
Inventor
Etsuro Egashira
Masato Fujita
Shinichiro Miyoshi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP12035576A priority Critical patent/JPS5345679A/en
Publication of JPS5345679A publication Critical patent/JPS5345679A/en
Pending legal-status Critical Current

Links

Landscapes

  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE: To lower the carbon concentration in Si, by covering th eheating jigs made of graphite to be used for the apparatus for pulling up Si single crystal with silicon carbide.
COPYRIGHT: (C)1978,JPO&Japio
JP12035576A 1976-10-08 1976-10-08 Pulling-up apparatus for sillicon single crystal Pending JPS5345679A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12035576A JPS5345679A (en) 1976-10-08 1976-10-08 Pulling-up apparatus for sillicon single crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12035576A JPS5345679A (en) 1976-10-08 1976-10-08 Pulling-up apparatus for sillicon single crystal

Publications (1)

Publication Number Publication Date
JPS5345679A true JPS5345679A (en) 1978-04-24

Family

ID=14784154

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12035576A Pending JPS5345679A (en) 1976-10-08 1976-10-08 Pulling-up apparatus for sillicon single crystal

Country Status (1)

Country Link
JP (1) JPS5345679A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53142386A (en) * 1977-05-18 1978-12-12 Toshiba Ceramics Co Low carbon silicon single crystal manufacturing apparatus
JPS5874595A (en) * 1981-10-23 1983-05-06 Toshiba Ceramics Co Ltd Pulling up device for single-crystal silicon
JPS6042299A (en) * 1983-08-18 1985-03-06 Toshiba Corp Manufacture of single crystal
JPS61150862U (en) * 1985-03-06 1986-09-18
JPH0193489A (en) * 1987-10-01 1989-04-12 Kyushu Electron Metal Co Ltd Production of single crystal for semiconductor
CN108796609A (en) * 2017-04-26 2018-11-13 丰田自动车株式会社 The manufacturing method and manufacturing device of SiC single crystal
CN109534837A (en) * 2019-01-09 2019-03-29 山东中鹏特种陶瓷有限公司 Silicon carbide coated graphite saggar and manufacturing process
JP2019167285A (en) * 2018-03-26 2019-10-03 住友金属鉱山株式会社 Single crystal growth apparatus and single crystal growth method

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53142386A (en) * 1977-05-18 1978-12-12 Toshiba Ceramics Co Low carbon silicon single crystal manufacturing apparatus
JPS5874595A (en) * 1981-10-23 1983-05-06 Toshiba Ceramics Co Ltd Pulling up device for single-crystal silicon
JPS6042299A (en) * 1983-08-18 1985-03-06 Toshiba Corp Manufacture of single crystal
JPS61150862U (en) * 1985-03-06 1986-09-18
JPH037405Y2 (en) * 1985-03-06 1991-02-25
JPH0193489A (en) * 1987-10-01 1989-04-12 Kyushu Electron Metal Co Ltd Production of single crystal for semiconductor
CN108796609A (en) * 2017-04-26 2018-11-13 丰田自动车株式会社 The manufacturing method and manufacturing device of SiC single crystal
JP2019167285A (en) * 2018-03-26 2019-10-03 住友金属鉱山株式会社 Single crystal growth apparatus and single crystal growth method
CN109534837A (en) * 2019-01-09 2019-03-29 山东中鹏特种陶瓷有限公司 Silicon carbide coated graphite saggar and manufacturing process
CN109534837B (en) * 2019-01-09 2021-07-27 山东中鹏特种陶瓷有限公司 Silicon carbide coated graphite sagger and manufacturing process thereof

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