JPS52149064A - Device for ipitaxial growth - Google Patents

Device for ipitaxial growth

Info

Publication number
JPS52149064A
JPS52149064A JP6560076A JP6560076A JPS52149064A JP S52149064 A JPS52149064 A JP S52149064A JP 6560076 A JP6560076 A JP 6560076A JP 6560076 A JP6560076 A JP 6560076A JP S52149064 A JPS52149064 A JP S52149064A
Authority
JP
Japan
Prior art keywords
ipitaxial
growth
jetting
belt
thickness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6560076A
Other languages
Japanese (ja)
Inventor
Kazushige Minegishi
Yoshihiro Imamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP6560076A priority Critical patent/JPS52149064A/en
Publication of JPS52149064A publication Critical patent/JPS52149064A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45502—Flow conditions in reaction chamber
    • C23C16/45508—Radial flow
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45578—Elongated nozzles, tubes with holes

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE:To obtain an eptiaxially grown layer excelling in thickness and electric properties by jetting a supply gas from belt-like or spiral slits.
JP6560076A 1976-06-07 1976-06-07 Device for ipitaxial growth Pending JPS52149064A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6560076A JPS52149064A (en) 1976-06-07 1976-06-07 Device for ipitaxial growth

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6560076A JPS52149064A (en) 1976-06-07 1976-06-07 Device for ipitaxial growth

Publications (1)

Publication Number Publication Date
JPS52149064A true JPS52149064A (en) 1977-12-10

Family

ID=13291662

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6560076A Pending JPS52149064A (en) 1976-06-07 1976-06-07 Device for ipitaxial growth

Country Status (1)

Country Link
JP (1) JPS52149064A (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5771336U (en) * 1980-10-17 1982-04-30
JPS62171113A (en) * 1986-01-24 1987-07-28 Toshiba Ceramics Co Ltd Vertical cvd apparatus
JPS62207797A (en) * 1986-03-10 1987-09-12 Shimada Phys & Chem Ind Co Ltd Gas blowing device in vapor growth device
JPS62207798A (en) * 1986-03-10 1987-09-12 Shimada Phys & Chem Ind Co Ltd Gas blowing device in epitaxial growth device
EP0825279A1 (en) * 1996-07-24 1998-02-25 Applied Materials, Inc. Method and apparatus for purging the back side of a substrate
US5884412A (en) * 1996-07-24 1999-03-23 Applied Materials, Inc. Method and apparatus for purging the back side of a substrate during chemical vapor processing
WO2002091448A1 (en) * 2001-04-25 2002-11-14 Tokyo Electron Limited Gaseous phase growing device
US8372482B2 (en) 2009-02-27 2013-02-12 Goodrich Corporation Methods and apparatus for controlled chemical vapor deposition
CN106191990A (en) * 2016-08-30 2016-12-07 上海华力微电子有限公司 A kind of air intake installation of boiler tube

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5771336U (en) * 1980-10-17 1982-04-30
JPS62171113A (en) * 1986-01-24 1987-07-28 Toshiba Ceramics Co Ltd Vertical cvd apparatus
JPS62207797A (en) * 1986-03-10 1987-09-12 Shimada Phys & Chem Ind Co Ltd Gas blowing device in vapor growth device
JPS62207798A (en) * 1986-03-10 1987-09-12 Shimada Phys & Chem Ind Co Ltd Gas blowing device in epitaxial growth device
EP0825279A1 (en) * 1996-07-24 1998-02-25 Applied Materials, Inc. Method and apparatus for purging the back side of a substrate
US5884412A (en) * 1996-07-24 1999-03-23 Applied Materials, Inc. Method and apparatus for purging the back side of a substrate during chemical vapor processing
WO2002091448A1 (en) * 2001-04-25 2002-11-14 Tokyo Electron Limited Gaseous phase growing device
CN100399517C (en) * 2001-04-25 2008-07-02 东京毅力科创株式会社 Gaseous phase growing device
KR100853886B1 (en) * 2001-04-25 2008-08-25 도쿄엘렉트론가부시키가이샤 Vapor-phase growing unit and method for forming vapor-phase-growth film using the same
US8372482B2 (en) 2009-02-27 2013-02-12 Goodrich Corporation Methods and apparatus for controlled chemical vapor deposition
US10415138B2 (en) 2009-02-27 2019-09-17 Goodrich Corporation Methods and apparatus for controlled chemical vapor deposition
CN106191990A (en) * 2016-08-30 2016-12-07 上海华力微电子有限公司 A kind of air intake installation of boiler tube

Similar Documents

Publication Publication Date Title
JPS5359295A (en) Device for supplying oxygen
GB1558109A (en) Methods and apparatus for the production of mg and ca by carbon reduction
GB1554065A (en) Apparatus for enriching an oxygen-containing gas with ozone
JPS52149064A (en) Device for ipitaxial growth
JPS52114895A (en) Nozzle for supplying gas
JPS52122722A (en) Fuel supply apparatus
JPS5345679A (en) Pulling-up apparatus for sillicon single crystal
JPS5345735A (en) Fuel gas generator
JPS5288839A (en) Hot water supplying device
JPS51138394A (en) Semiconductor device
JPS52124859A (en) Continuous vapor phase growth apparatus
GB1557369A (en) Nozzle device for the production of texturised filament yaarns
JPS5364378A (en) Heat resisting conveyor belt
JPS52107772A (en) Apparatus for controlling epitaxial growth
JPS52150209A (en) Growing method for matty seedling
AU2727577A (en) Torch with gas actuated starting rod feed device
JPS5299173A (en) Device for saving gas fuel
JPS52143515A (en) Tube dividing device
JPS51140889A (en) A vapor phase growth apparatus
JPS5328570A (en) Method of supplying ozoneecontaining gas
JPS538722A (en) Voltage changing device
JPS5353745A (en) Power supply
JPS5298179A (en) Process for producing tall and staut floats and floats
JPS52145107A (en) Growing method for matty seedling
JPS5332589A (en) Method and apparatus of supporting suction ladder for dredgers