JPS52124859A - Continuous vapor phase growth apparatus - Google Patents

Continuous vapor phase growth apparatus

Info

Publication number
JPS52124859A
JPS52124859A JP4127176A JP4127176A JPS52124859A JP S52124859 A JPS52124859 A JP S52124859A JP 4127176 A JP4127176 A JP 4127176A JP 4127176 A JP4127176 A JP 4127176A JP S52124859 A JPS52124859 A JP S52124859A
Authority
JP
Japan
Prior art keywords
vapor phase
phase growth
growth apparatus
continuous vapor
thickness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4127176A
Other languages
Japanese (ja)
Inventor
Katsuo Sugawara
Takeo Yoshimi
Hideo Sakai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP4127176A priority Critical patent/JPS52124859A/en
Publication of JPS52124859A publication Critical patent/JPS52124859A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE:To obtain desired values of grown film thickness by measuring the thickness of vapor grown film and controlling the volume of the gas supplied according to the difference from required thickness.
JP4127176A 1976-04-14 1976-04-14 Continuous vapor phase growth apparatus Pending JPS52124859A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4127176A JPS52124859A (en) 1976-04-14 1976-04-14 Continuous vapor phase growth apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4127176A JPS52124859A (en) 1976-04-14 1976-04-14 Continuous vapor phase growth apparatus

Publications (1)

Publication Number Publication Date
JPS52124859A true JPS52124859A (en) 1977-10-20

Family

ID=12603766

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4127176A Pending JPS52124859A (en) 1976-04-14 1976-04-14 Continuous vapor phase growth apparatus

Country Status (1)

Country Link
JP (1) JPS52124859A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5480071A (en) * 1977-12-09 1979-06-26 Hitachi Ltd Vapor growth method for semiconductor layer
JPS6333813A (en) * 1986-07-28 1988-02-13 Tokyo Electron Ltd Thin film forming apparatus
JPH03164497A (en) * 1989-11-24 1991-07-16 Res Dev Corp Of Japan Epitaxial growth method of compound crystal
JPH04247637A (en) * 1991-02-04 1992-09-03 Nichia Chem Ind Ltd Method of measuring surface condition of semiconductor crystal film

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5480071A (en) * 1977-12-09 1979-06-26 Hitachi Ltd Vapor growth method for semiconductor layer
JPS5716734B2 (en) * 1977-12-09 1982-04-07
JPS6333813A (en) * 1986-07-28 1988-02-13 Tokyo Electron Ltd Thin film forming apparatus
JPH03164497A (en) * 1989-11-24 1991-07-16 Res Dev Corp Of Japan Epitaxial growth method of compound crystal
JPH0751478B2 (en) * 1989-11-24 1995-06-05 新技術事業団 Epitaxial growth method of compound crystal
JPH04247637A (en) * 1991-02-04 1992-09-03 Nichia Chem Ind Ltd Method of measuring surface condition of semiconductor crystal film

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