JPS51140561A - Liquid phase epitaxial growing method - Google Patents

Liquid phase epitaxial growing method

Info

Publication number
JPS51140561A
JPS51140561A JP6572075A JP6572075A JPS51140561A JP S51140561 A JPS51140561 A JP S51140561A JP 6572075 A JP6572075 A JP 6572075A JP 6572075 A JP6572075 A JP 6572075A JP S51140561 A JPS51140561 A JP S51140561A
Authority
JP
Japan
Prior art keywords
liquid phase
phase epitaxial
growing method
epitaxial growing
source material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6572075A
Other languages
Japanese (ja)
Other versions
JPS5742211B2 (en
Inventor
Kenzo Akita
Akio Yamaguchi
Takeshi Kotani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP6572075A priority Critical patent/JPS51140561A/en
Publication of JPS51140561A publication Critical patent/JPS51140561A/en
Publication of JPS5742211B2 publication Critical patent/JPS5742211B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE: To provide a method to obtain a high quality growing layer by contacting a source material to the upper part of liquid phase to saturate it and growing liquid phase epitaxial after drawing the source material.
COPYRIGHT: (C)1976,JPO&Japio
JP6572075A 1975-05-30 1975-05-30 Liquid phase epitaxial growing method Granted JPS51140561A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6572075A JPS51140561A (en) 1975-05-30 1975-05-30 Liquid phase epitaxial growing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6572075A JPS51140561A (en) 1975-05-30 1975-05-30 Liquid phase epitaxial growing method

Publications (2)

Publication Number Publication Date
JPS51140561A true JPS51140561A (en) 1976-12-03
JPS5742211B2 JPS5742211B2 (en) 1982-09-07

Family

ID=13295125

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6572075A Granted JPS51140561A (en) 1975-05-30 1975-05-30 Liquid phase epitaxial growing method

Country Status (1)

Country Link
JP (1) JPS51140561A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59217696A (en) * 1983-05-24 1984-12-07 Hitachi Cable Ltd Liquid-phase crystal growth apparatus

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60205008A (en) * 1984-03-30 1985-10-16 Nisshinbo Ind Inc Coupling device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59217696A (en) * 1983-05-24 1984-12-07 Hitachi Cable Ltd Liquid-phase crystal growth apparatus

Also Published As

Publication number Publication date
JPS5742211B2 (en) 1982-09-07

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