JPS52135264A - Liquid phase epitaxial growth method - Google Patents

Liquid phase epitaxial growth method

Info

Publication number
JPS52135264A
JPS52135264A JP5236176A JP5236176A JPS52135264A JP S52135264 A JPS52135264 A JP S52135264A JP 5236176 A JP5236176 A JP 5236176A JP 5236176 A JP5236176 A JP 5236176A JP S52135264 A JPS52135264 A JP S52135264A
Authority
JP
Japan
Prior art keywords
liquid phase
epitaxial growth
phase epitaxial
growth method
melt
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5236176A
Other languages
Japanese (ja)
Inventor
Toshio Sogo
Jun Ishii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP5236176A priority Critical patent/JPS52135264A/en
Publication of JPS52135264A publication Critical patent/JPS52135264A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To perform liquid phase epitaxial growth by holding a substrate in the upper part of melt.
COPYRIGHT: (C)1977,JPO&Japio
JP5236176A 1976-05-07 1976-05-07 Liquid phase epitaxial growth method Pending JPS52135264A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5236176A JPS52135264A (en) 1976-05-07 1976-05-07 Liquid phase epitaxial growth method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5236176A JPS52135264A (en) 1976-05-07 1976-05-07 Liquid phase epitaxial growth method

Publications (1)

Publication Number Publication Date
JPS52135264A true JPS52135264A (en) 1977-11-12

Family

ID=12912655

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5236176A Pending JPS52135264A (en) 1976-05-07 1976-05-07 Liquid phase epitaxial growth method

Country Status (1)

Country Link
JP (1) JPS52135264A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03183691A (en) * 1989-12-11 1991-08-09 Nec Corp Growing method for single crystal
JPH0529235A (en) * 1991-07-22 1993-02-05 Tokuzo Sukegawa Manufacture of gaas element having high purity layer

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4945033A (en) * 1972-08-07 1974-04-27

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4945033A (en) * 1972-08-07 1974-04-27

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03183691A (en) * 1989-12-11 1991-08-09 Nec Corp Growing method for single crystal
JPH0529235A (en) * 1991-07-22 1993-02-05 Tokuzo Sukegawa Manufacture of gaas element having high purity layer

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