JPS52135264A - Liquid phase epitaxial growth method - Google Patents
Liquid phase epitaxial growth methodInfo
- Publication number
- JPS52135264A JPS52135264A JP5236176A JP5236176A JPS52135264A JP S52135264 A JPS52135264 A JP S52135264A JP 5236176 A JP5236176 A JP 5236176A JP 5236176 A JP5236176 A JP 5236176A JP S52135264 A JPS52135264 A JP S52135264A
- Authority
- JP
- Japan
- Prior art keywords
- liquid phase
- epitaxial growth
- phase epitaxial
- growth method
- melt
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To perform liquid phase epitaxial growth by holding a substrate in the upper part of melt.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5236176A JPS52135264A (en) | 1976-05-07 | 1976-05-07 | Liquid phase epitaxial growth method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5236176A JPS52135264A (en) | 1976-05-07 | 1976-05-07 | Liquid phase epitaxial growth method |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS52135264A true JPS52135264A (en) | 1977-11-12 |
Family
ID=12912655
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5236176A Pending JPS52135264A (en) | 1976-05-07 | 1976-05-07 | Liquid phase epitaxial growth method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS52135264A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03183691A (en) * | 1989-12-11 | 1991-08-09 | Nec Corp | Growing method for single crystal |
JPH0529235A (en) * | 1991-07-22 | 1993-02-05 | Tokuzo Sukegawa | Manufacture of gaas element having high purity layer |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4945033A (en) * | 1972-08-07 | 1974-04-27 |
-
1976
- 1976-05-07 JP JP5236176A patent/JPS52135264A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4945033A (en) * | 1972-08-07 | 1974-04-27 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03183691A (en) * | 1989-12-11 | 1991-08-09 | Nec Corp | Growing method for single crystal |
JPH0529235A (en) * | 1991-07-22 | 1993-02-05 | Tokuzo Sukegawa | Manufacture of gaas element having high purity layer |
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